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JP3481392B2 - 電子部品リード部材及びその製造方法 - Google Patents

電子部品リード部材及びその製造方法

Info

Publication number
JP3481392B2
JP3481392B2 JP15198096A JP15198096A JP3481392B2 JP 3481392 B2 JP3481392 B2 JP 3481392B2 JP 15198096 A JP15198096 A JP 15198096A JP 15198096 A JP15198096 A JP 15198096A JP 3481392 B2 JP3481392 B2 JP 3481392B2
Authority
JP
Japan
Prior art keywords
alloy
underlayer
plating
surface layer
lead member
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP15198096A
Other languages
English (en)
Other versions
JPH09331007A (ja
Inventor
智 鈴木
守正 谷本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
THE FURUKAW ELECTRIC CO., LTD.
Original Assignee
THE FURUKAW ELECTRIC CO., LTD.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by THE FURUKAW ELECTRIC CO., LTD. filed Critical THE FURUKAW ELECTRIC CO., LTD.
Priority to JP15198096A priority Critical patent/JP3481392B2/ja
Priority to US08/864,339 priority patent/US6140583A/en
Priority to CN97112761A priority patent/CN1122300C/zh
Publication of JPH09331007A publication Critical patent/JPH09331007A/ja
Application granted granted Critical
Publication of JP3481392B2 publication Critical patent/JP3481392B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
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Description

【発明の詳細な説明】
【０００１】
【発明の属する技術分野】本発明は、半導体等の電子部
品を外部回路と接続する際に使用される電子部品リード
部材及びその製造方法に関する。
【０００２】
【従来の技術】ダイオード、トランジスター、ＩＣ等の
半導体、コンデンサー、抵抗等の各種電子部品には、各
々の素子部をプリント基板等の外部回路に接続する為の
リード部が形成されている。このリード部は外部電源と
リード部材により接続される。リード部材であるリード
線は、その構成が最も古くに確立されたもので、Cu、Cu
-Fe系、 Cu-Sn系等のCu合金、又はCu被覆鋼材にAu、A
g、Sn、Ni、 Sn-Pb系合金等をめっきしたものが多用さ
れている。リード線の材料は、用いられる電子部品での
機械的強度や導電性の基準に応じて選定される。例え
ば、機械的強度が重視される部品にはCu合金又はCu被覆
鋼材が選ばれ、導電性が重視される部品にはCuが選ばれ
る。又電子部品の製造工程でエッチング処理を行うもの
には酸に対する耐食性の高い金属がめっきされたリード
線が選ばれ、溶接、半田付け、キュアモールド、エージ
ング等の処理を行うものには、耐熱性、耐酸化性に優れ
るめっき材が選ばれる。具体的には、Siチップとリード
材とは 350〜400 ℃の高温で半田付けされ、Si樹脂のキ
ュアモールドは大気中で 200〜250 ℃に加熱してなさ
れ、Siチップは強酸又は強アルカリでエッチングされ
る。従って、Siチップのリード線には、耐熱性、耐酸化
性、耐食性に優れるAgめっきリード線が選ばれる。
【０００３】
【発明が解決しようとする課題】Agは上述のように耐熱
性、耐酸化性、耐食性を兼備しているが、高価であり、
マイグレーションを起こし易く、又大気中で高温加熱す
るとAgめっき層中を酸素が透過する為下地層が酸化して
半田付け性が低下する等の欠点がある。このようなこと
から、Agに代えてPd又はPd合金を用いる方法が開発され
た（特開昭60-217693 号公報）。しかしPdも高価な為、
表面層（Pd層）はできるだけ薄く形成するが、表面層が
薄くなると加熱により劣化し半田付け性が低下するとい
う問題があった。このようなことから、本発明者等は、
その原因について鋭意研究を行い、基体成分が下地層の
粒界又は粒界内のピンホールを拡散して表面層を汚染す
ることを見出し、前記拡散は下地層の結晶粒径を大きく
して結晶粒界を減らすことにより抑制できることを知見
し、更に研究を進めて本発明を完成させるに至った。本
発明は、Pd、Ru、Pd合金、又はRu合金の表面層の厚さを
薄くしても、優れた半田付け性が得られる電子部品リー
ド部材及びその製造方法の提供を目的とする。
【０００４】
【課題を解決すための手段】請求項１記載の発明は、少
なくとも表層が銅又は銅合金からなる基体上にNi、Co、
Ni合金、又はCo合金の下地層が形成され、その上にNi−
P 系合金、Ni−B 系合金、Co−P 系合金、Co−B 系合
金、Ni−Co−P 系合金、又はNi−Co−B 系合金の中間層
が形成され、その上にPd、Ru、Pd合金、又はRu合金の表
面層が形成された電子部品リード部材において、前記基
体の少なくとも表層の銅又は銅合金の結晶粒径が20μｍ
以上に調整され、その上に下地層がめっきにより形成さ
れ、前記下地層の結晶粒径が20μｍ以上であること特徴
とする電子部品リード部材である。
【０００５】請求項２記載の発明は、請求項１に記載し
た電子部品リード部材の表面層の上にAu、Ag、Rh、Pt、
Re、Os、又はIrの補助層が 0.001〜0.1 μｍの厚さに形
成されていることを特徴とする電子部品リード部材であ
る。
【０００６】請求項３記載の発明は、請求項１に記載し
た電子部品リード部材の表面層の下にAu、Ag、Rh、Pt、
Re、Os、又はIrの補助層が 0.001〜0.1 μｍの厚さに形
成されていることを特徴とする電子部品リード部材であ
る。
【０００７】請求項４記載の発明は、少なくとも表層が
銅又は銅合金からなる基体上にNi、Co、Ni合金、又はCo
合金の下地層が形成され、その上にPd、Ru、Pd合金、又
はRu合金の表面層が形成された電子部品リード部材にお
いて、前記表面層の上にAu、Ag、Rh、Pt、Re、Os、又は
Irの補助層が 0.001〜0.1 μｍの厚さに設けられてお
り、前記基体の少なくとも表層の銅又は銅合金の結晶粒
径が20μｍ以上に調整され、その上に下地層がめっきに
より形成され、前記下地層の結晶粒径が20μｍ以上であ
ること特徴とする電子部品リード部材である。
【０００８】請求項５記載の発明は、少なくとも表層が
銅又は銅合金からなる基体上にNi、Co、Ni合金、又はCo
合金の下地層が形成され、その上にPd、Ru、Pd合金、又
はRu合金の表面層が形成された電子部品リード部材にお
いて、前記表面層の下にAu、Ag、Rh、Pt、Re、Os、又は
Irの補助層が 0.001〜0.1 μｍの厚さに設けられてお
り、前記基体の少なくとも表層の銅又は銅合金の結晶粒
径が20μｍ以上に調整され、その上に下地層がめっきに
より形成され、前記下地層の結晶粒径が20μｍ以上であ
ること特徴とする電子部品リード部材である。
【０００９】
【発明の実施の形態】請求項１記載の発明において、表
面層を形成するPd、Ru、Pd合金、又はRu合金は、マイグ
レーションを起こさず、耐熱性、耐酸化性に優れた金属
材料である。しかし前記金属材料は高価な為、できるだ
け薄く形成する必要がある。
【００１０】この発明で、下地層の結晶粒径を20μｍ以
上に限定する理由は、前記下地層の結晶粒径が20μｍ未
満では、結晶粒界が多くなり、又結晶粒界に生じるピン
ホールも増加して、基体成分が前記結晶粒界又はピンホ
ールを通って表面に拡散し易くなり、表面が基体成分に
より汚染され、半田付け性が低下する為である。前記下
地層の結晶粒径は特に50μｍ以上が望ましい。
【００１１】請求項１記載の発明において、下地層の上
に形成するNi−P 系合金、Ni−B 系合金、Co−P 系合
金、Co−B 系合金、Ni−Co−P 系合金、Ni−Co−B 系合
金の中間層は、前記下地層に比べて酸化し難い為、下地
層の酸化に起因する半田付け性の低下を抑制する。この
中間層の厚さは特に限定するものではないが、加工性の
点から0.01〜 0.5μｍが望ましい。
【００１２】請求項２、４記載の発明において、表面層
の上に形成するAu、Ag、Rh、Pt、Re、Os、又はIrの補助
層は、表面層のPdやRu等より酸化し難い為、半田付け性
を一層向上させる効果がある。この補助層は、極めて酸
化し難い為、極薄く形成してもその効果が発揮される。
この補助層の厚さは経済性と半田付け性の点から 0.001
〜0.1 μｍが望ましい。
【００１３】請求項３、５記載の発明は、前記補助層を
表面層の下に形成することにより、下地層又は中間層の
効果を一層高めることを狙ったものである。この場合の
補助層の厚さも経済性と半田付け性の点から 0.001〜0.
1 μｍが望ましい。
【００１４】本発明では、基体の少なくとも表面の銅又
は銅合金の結晶粒径を20μｍ以上に調整し、この上に下
地層をめっきするので、下地層は基体表面の結晶粒に沿
って析出して、下地層の結晶粒径も20μｍ以上に形成さ
れる。
【００１５】基体表面の銅又は銅合金の結晶粒径は焼鈍
条件によって調整する。焼鈍は生産性の点から、通常、
電流焼鈍により行われるが、この場合の結晶粒径は10μ
ｍ前後と小さい。その為、本発明で、20μｍ以上の結晶
粒径を得るには、２次再結晶温度以上の温度に設定され
た炉を用いて焼鈍するのが望ましい。
【００１６】本発明において、基体にはCu、Cu−Zn系合
金、Cu−Sn系合金、Cu−Ni系合金、又はFe系材料にCuを
被覆したもの等が用いられる。
【００１７】本発明において、Ni、Co、Ni合金、又はCo
合金を主成分とする下地層には Ni-Co系合金も含まれ
る。又Pd、Ru、Pd合金、又はRu合金を主成分とする表面
層にはPd-Ru系合金も含まれる。
【００１８】
【実施例】次に本発明を実施例により更に具体的に説明
する。走行する 0.6mmφの無酸素銅線に前処理（電解脱
脂、水洗、酸洗、水洗）を施し、次いで下地層めっき、
水洗、表面層めっき、水洗、Auめっき、水洗、乾燥を順
に施して、表１に示す構成のリード線を製造した。前記
製造は、前処理、めっき処理を連続して行い巻取るめっ
き設備により行った。無酸素銅線は、予め、窒素と水素
の混合ガス雰囲気の管状炉を用いて焼鈍して結晶粒径を
調整した。焼鈍は、時間を固定（30分）し、温度を種々
に変えて行った。表１に示したリード線を長さ30mmに切
断し、これをヘッダー加工したのち大気中で 200℃×８
時間加熱してサンプルとした。これらサンプルについて
半田付け性をＭＩＬ法に準じて試験した。即ち、サンプ
ルをアセトンで充分洗浄した後、共晶温度 235℃の半田
浴に５秒間浸漬したのち引き揚げ、サンプルに付着した
半田の面積を拡大鏡（15倍）で計測し、前記半田の付着
面積を浸漬面積で除してぬれ面積を百分率で表した。結
果を表１に示す。
【００１９】下記に各層のめっき条件を記す。 〔Niめっき〕 めっき液：NiSO4 240g/l、NiCl2 45g/l、H3BO3 30g/
l。 めっき条件：電流密度 5A/dm2、温度 50℃。 〔Coめっき〕 めっき液：CoSO4 400g/l、NaCl 20g/l、H3BO3 40g/l。 めっき条件：電流密度 5A/dm2、温度 30℃。 〔Ni-Co 合金めっき〕 めっき液：NiSO4 240g/l、NiCl2 45g/l、H3BO3 30g/
l、 CoSO4 5g/l(3%Co),10g/l(5%Co),15g/l(10%Co) 。 めっき条件：電流密度 5A/dm2、温度 55℃。 〔Ni-B合金めっき〕 めっき液：NiSO4 240g/l,NiCl2 45g/l,H3BO3 30g/l,(CH
3)3NBH3 3g/l。 めっき条件：電流密度 1〜10A/dm2 、温度 55℃。 〔Ni-P合金めっき〕 めっき液：NiSO4 240g/l、NiCl2 15g/l 、H3BO3 30g/l
、H3PO3 32g/l 。 めっき条件：電流密度 1〜10A/dm2 、温度 30℃。 〔Co-B合金めっき〕 めっき液：CoSO4 400g/l、NaCl 20g/l、H3BO3 40g/l 、
(CH3)3NBH 3g/l。 めっき条件：電流密度 5A/dm2 、温度 30℃。 〔Co-P合金めっき〕 めっき液：CoSO47H2O 70g/l 、H3PO3 8g/l、H3BO3 25g/
l 、Na2SO4 115g/l 、NaCl 25g/l。 めっき条件：電流密度 1〜5A/dm2、温度 30℃。 〔Ni-Co-B 合金めっき〕 めっき液：NiCl26H2O 10g/l 、CoCl26H2O 45g/l 、NH4C
l 12g/l 、NH4OH 160ml/l 、(C2H5)4NCl 45ml/l 、NaBH
2 1ml/l めっき条件：電流密度 A/dm2、温度 45℃。 〔Ni-Co-P 合金めっき〕 めっき液：NiSO46H2O 15g/l 、CoSO47H2O 10g/l 、 ク
エン酸Na 84g/l、(NH4)2SO4 42g/l 、NH4OH 14ml/l、H3
PO2 8ml/l 。 めっき条件：電流密度 A/dm2、温度 90℃。 〔Pdめっき〕 めっき液：Pd(NH3)2Cl2 40g/l、NH4OH 90ml/l、(NH4)2
SO4 50g/l。 めっき条件：電流密度 1A/dm2、温度 30℃。 〔Pd-20wt%Ni合金めっき〕 めっき液：Pd(NH3)2Cl2 40g/l 、NiSO4 45g/l 、NH4OH
90ml/l、(NH4)2SO4 50g/l めっき条件：電流密度 1A/dm2、温度 30℃。 〔Ruめっき〕 めっき液：RuNOCl35H2O 10g/l 、NH2SO3H 15g/l 。 めっき条件：電流密度 1A/dm2、温度 60℃。 〔Agストライク めっき〕 めっき液：AgCN 5g/l、 KCN 60g/l、K2CO3 30g/l。 めっき条件：電流密度 2A/dm2、温度 30 ℃。 〔Agめっき〕 めっき液：AgCN 50g/l、KCN 100g/l 、K2CO3 30g/l。 めっき条件：電流密度 1A/dm2、温度 30℃。 〔Ptめっき〕 めっき液：Pt(NH3)2(NO2)2 10g/l、硝酸アンモニウム
100g/l、亜硝酸アンモニウム 10g/l、水酸化アンモニウ
ム 55ml/l。 めっき条件：電流密度 1A/dm2、温度 90℃。 〔Auストライクめっき〕 めっき液：エヌ・イーケムキャット社 N-200。 めっき条件：電流密度 2A/dm2、温度 25℃。 〔Auめっき〕 めっき液：エヌ・イーケムキャット社N-44。 めっき条件：電流密度 1A/dm2、温度 65℃。 〔Rhめっき〕 めっき液：エヌ・イーケムキャット社 RH#225 。 めっき条件：電流密度 1A/dm2、温度 55℃。
【００２０】
【表１】
【００２１】表１より明らかなように、本発明のリード
部材 (No.1〜18) は、いずれも、表面層の厚さが薄いに
も関わらず優れた半田付け性を示した。これに対し、比
較例品(No.19,20)は、いずれも半田付け性が劣った。こ
れは下地層の結晶粒径が小さい為、基体成分が粒界を通
って表面に容易に拡散して、表面層又は表面層上に形成
した補助層を汚染した為である。尚、下地層の結晶粒径
が小さいのは、基体の無酸素銅線の熱処理温度が低く、
前記無酸素銅線の結晶粒径が小さかった為である。
【００２２】
【発明の効果】以上に述べたように、本発明の電子部品
リード部材は、下地層の結晶粒径が20μｍ以上と大きい
為、つまり基体成分の拡散通路となる結晶粒界が少ない
為、リード部材の表面が汚染され難く、優れた半田付け
性が得られる。又結晶粒径の大きい下地層は、下地層を
結晶粒径の大きい基体上にめっきすることにより容易に
形成できる。依って、工業上顕著な効果を奏する。

Claims (5)

    (57)【特許請求の範囲】
  1. 【請求項１】 少なくとも表層が銅又は銅合金からなる
    基体上にNi、Co、Ni合金、又はCo合金の下地層が形成さ
    れ、その上にNi−P 系合金、Ni−B 系合金、Co−P 系合
    金、Co−B 系合金、Ni−Co−P 系合金、又はNi−Co−B
    系合金の中間層が形成され、その上にPd、Ru、Pd合金、
    又はRu合金の表面層が形成された電子部品リード部材に
    おいて、前記基体の少なくとも表層の銅又は銅合金の結
    晶粒径が20μｍ以上に調整され、その上に下地層がめっ
    きにより形成され、前記下地層の結晶粒径が20μｍ以上
    であること特徴とする電子部品リード部材。
  2. 【請求項２】 請求項１に記載した電子部品リード部材
    の表面層の上にAu、Ag、Rh、Pt、Re、Os、又はIrの補助
    層が 0.001〜0.1 μｍの厚さに形成されていることを特
    徴とする電子部品リード部材。
  3. 【請求項３】 請求項１に記載した電子部品リード部材
    の表面層の下にAu、Ag、Rh、Pt、Re、Os、又はIrの補助
    層が 0.001〜0.1 μｍの厚さに形成されていることを特
    徴とする電子部品リード部材。
  4. 【請求項４】 少なくとも表層が銅又は銅合金からなる
    基体上にNi、Co、Ni合金、又はCo合金の下地層が形成さ
    れ、その上にPd、Ru、Pd合金、又はRu合金の表面層が形
    成された電子部品リード部材において、前記表面層の上
    にAu、Ag、Rh、Pt、Re、Os、又はIrの補助層が 0.001〜
    0.1 μｍの厚さに設けられており、前記基体の少なくと
    も表層の銅又は銅合金の結晶粒径が20μｍ以上に調整さ
    れ、その上に下地層がめっきにより形成され、前記下地
    層の結晶粒径が20μｍ以上であること特徴とする電子部
    品リード部材。
  5. 【請求項５】 少なくとも表層が銅又は銅合金からなる
    基体上にNi、Co、Ni合金、又はCo合金の下地層が形成さ
    れ、その上にPd、Ru、Pd合金、又はRu合金の表面層が形
    成された電子部品リード部材において、前記表面層の下
    にAu、Ag、Rh、Pt、Re、Os、又はIrの補助層が 0.001〜
    0.1 μｍの厚さに設けられており、前記基体の少なくと
    も表層の銅又は銅合金の結晶粒径が20μｍ以上に調整さ
    れ、その上に下地層がめっきにより形成され、前記下地
    層の結晶粒径が20μｍ以上であること特徴とする電子部
    品リード部材。
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TWI225322B (en) * 2002-08-22 2004-12-11 Fcm Co Ltd Terminal having ruthenium layer and a connector with the terminal
US8352724B2 (en) * 2003-07-23 2013-01-08 Semiconductor Energy Laboratory Co., Ltd. Microprocessor and grid computing system
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JP2005129970A (ja) * 2005-02-08 2005-05-19 Matsushita Electric Ind Co Ltd 半導体装置用リードフレーム
JP4992028B2 (ja) * 2006-05-31 2012-08-08 国立大学法人東京工業大学 耐経年劣化特性に優れたＩｒ基導電性被覆用材料
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CN101828255B (zh) * 2007-12-03 2011-11-09 新日铁高新材料株式会社 半导体装置用接合线
JP4617375B2 (ja) * 2007-12-03 2011-01-26 新日鉄マテリアルズ株式会社 半導体装置用ボンディングワイヤ
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CN102703941B (zh) * 2012-06-29 2015-04-22 东莞中探探针有限公司 一种电连接器用探针的电镀工艺
JP6327784B2 (ja) * 2012-10-19 2018-05-23 Ｊｘ金属株式会社 電子部品用金属材料及びその製造方法
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