JP3468651B2 - Substrate heat treatment equipment - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate heat treatment apparatus for performing various heat treatments such as oxidation and annealing on various substrates such as semiconductor wafers and ceramic substrates.

[0002]

2. Description of the Related Art As a method for processing a substrate such as a semiconductor wafer, there are a batch method in which a plurality of substrates are processed simultaneously and a single wafer method in which they are processed one by one. A vertical diffusion furnace is a typical batch-type apparatus for heat-treating a substrate, and a lamp annealing apparatus is a typical single-wafer type apparatus for heat-treating a substrate.

A vertical diffusion furnace, for example, as shown in FIG. 6, accommodates a boat 100 having a plurality of substrates W mounted therein, and a quartz tube 110 arranged along the vertical direction.
And a heater unit 120 for heating from the outer peripheral surface side of the quartz tube 110. The process gas such as nitrogen and oxygen supplied during the heat treatment is introduced from the upper part of the quartz tube 110 and discharged from the lower part thereof. The heater unit 120 includes an upper heater unit 121, a central heater unit 122, and a lower heater unit 12 so as to uniformly heat each of the plurality of substrates W stacked and placed along the vertical direction.
It is divided into three parts. By adjusting the temperature of each of the heater units 121 to 123, a space with a uniform temperature distribution is secured along the vertical direction of the quartz tube 110, that is, a predetermined soaking length is secured, and each substrate W is So that a uniform heat treatment can be performed.

The lamp annealing apparatus is provided, for example, as shown in FIG. 7, with a quartz chamber 210 accommodating a substrate placing portion 200 on which a single substrate W is placed, and above and below the quartz chamber 210. Lamp heater units 220, 230 which are irradiated with strong infrared energy
It has and. In this apparatus, the process gas is introduced from one end side in the lateral direction of the quartz chamber 210 and discharged from the other end side.

[0005]

In the vertical diffusion furnace configured as described above, the heater units 121 to 123 are divided and arranged along the stacking direction of the substrates W, and the respective temperatures are controlled. Therefore, a predetermined soaking length can be secured in the stacking direction. On the other hand, since there is no means for controlling the temperature distribution in the radial direction of the substrate W, there is a drawback that the temperature distribution in the radial direction becomes worse than in the stacking direction. In order to improve the temperature distribution in the radial direction, the upper heater unit 121 and the lower heater unit 123 are lengthened in the vertical direction, or the quartz tube 11 is used.
It is necessary to take measures to dispose the heat insulating material 130 on the upper and lower portions of 0 to prevent heat radiation. However, restrictions on the furnace length are often added due to the size of the clean room in which such a device is installed and the relationship with other devices, and it is practical to take the above-mentioned measures that make the size of the device inevitably large. Has become difficult. In particular, in the recent semiconductor manufacturing industry, there is a movement to increase the substrate size from 8 inch diameter to 300 mm diameter, and the radial temperature distribution required for such a large diameter substrate is within ± 0.5 ° C. There is a problem that it cannot fit in.

[0006] Further, in the lamp annealing apparatus configured as described above, while the temperature can be raised and lowered at high speed,
Since the arrangement of the plurality of lamps forming the lamp heater units 220 and 230 directly affects the temperature distribution, it is difficult to keep the temperature distribution in the radial direction of the substrate W within ± 0.5 ° C. ing. In order to eliminate this uneven temperature distribution, it is necessary to rotate the substrate mounting portion 200 at a low speed during the heat treatment, or dispose the diffusion plates 240 that diffuse the infrared energy above and below the substrate W. When the rotation shaft for rotating the substrate mounting portion 200 is disposed so as to penetrate the lower lamp heater unit 230 and the lower diffusion plate 240 for rotating the substrate mounting portion 200, the lamp heater unit 230 and the diffusion are provided. Another problem arises in that the gap from the plate 240 causes uneven heating from below.

The present invention has been made in view of such circumstances, and by devising a mechanism for rotating a substrate, it is possible to uniformly treat the temperature distribution in the radial direction even with a large-diameter substrate. It is an object of the present invention to provide a substrate heat treatment apparatus capable of performing the above.

[0008]

The present invention has the following constitution in order to achieve such an object. That is, the invention according to claim 1 is a substrate heat treatment apparatus for performing a heat treatment on a substrate, which is a cylindrical reaction outer tube arranged along a vertical direction, and arranged inside the reaction outer tube. And a cylindrical reaction inner tube, and a reaction chamber formed between the inner upper surface of the reaction outer tube and the outer upper surface of the reaction inner tube, the substrate being held on the outer upper surface of the reaction inner tube. Holding means, drive means for rotating the reaction inner tube around a vertical axis, first heating means for heating the reaction chamber from the outer upper surface side of the reaction outer tube, and inside of the reaction inner tube Second heating means for heating the reaction chamber from the lower surface side is provided.

A substrate heat treatment apparatus according to a second aspect is the substrate heat treatment apparatus according to the first aspect, further comprising third heating means for heating the reaction chamber from the outer peripheral surface side of the reaction outer tube. It is characterized by being present.

The invention described in claim 3 is the same as claim 1
3. The substrate heat treatment apparatus according to claim 2, wherein an introduction port for introducing a process gas into the reaction chamber is provided on an upper side surface of the reaction outer tube, and the process gas introduced into the reaction chamber is supplied to the reaction outer tube. It is characterized in that the gas is exhausted to the outside through a gap between the inner peripheral surface and the outer peripheral surface of the reaction inner tube.

The invention described in claim 4 is the same as claim 1.
The substrate heat treatment apparatus according to claim 3, wherein the reaction inner tube is provided with a measuring unit for measuring a physical quantity related to a temperature in the reaction chamber, and a converting unit for converting the physical quantity into a temperature signal. The required operating electric power of the measuring means and the converting means and the temperature signal from the converting means are transmitted through a bearing that rotatably supports the tube.

The invention described in claim 5 is the same as claim 1.
4. The substrate heat treatment apparatus according to claim 3, wherein a measuring unit that measures a physical quantity related to the temperature in the reaction chamber, a converting unit that converts the measured physical quantity into a temperature signal, and a modulating unit that modulates the temperature signal. Is provided in the reaction inner tube, and the measuring means and the converting means are provided via a first coil arranged in the reaction inner tube and a second coil arranged in the reaction outer tube. In addition to transmitting the required operating power of the modulating means, the modulated signal from the modulating means is also transmitted.

The invention according to claim 6 is the same as claim 1.
5. The substrate heat treatment apparatus according to claim 4, wherein the first heating unit or the moving unit that moves the first heating unit and the third heating unit toward and away from the reaction outer tube; and the reaction. Between the first heating means and the reaction outer tube in a state where the outer tube and the first heating means are separated from each other, or between the first heating means and the third heating means and the reaction outer tube. And a heat insulating shutter that can be inserted between the two.

The invention described in claim 7 is the same as claim 2.
In the substrate heat treatment apparatus described in (1) above, the diameter of the upper portion of the reaction outer tube is made smaller than the outer diameter of the reaction inner tube to form a stepped cylinder, and the third heating means is provided on the outer periphery of the stepped portion. It is characterized by being arranged on the surface.

[0015]

The operation of the invention described in claim 1 is as follows. The substrate to be heat-treated is held by the holding means in the reaction chamber formed by the inner upper surface of the outer reaction tube and the outer upper surface of the inner reaction tube, is heated from above by the first heating means, and is heated by the second heating means. It is heated from below by the heating means. When the reaction inner tube itself is rotated around the vertical axis by the driving means, only the bottom surface of the reaction chamber is rotated and the substrate can be rotated together with the holding means. Moreover, since the second heating means heats the reaction chamber from the inner lower surface side of the reaction inner tube, it does not hinder the rotation of the substrate. Therefore, the substrate can be uniformly heated by the first heating means from the upper side and uniformly heated by the second heating means from the lower side without causing uneven temperature distribution due to the provision of the rotation mechanism. be able to.

According to the invention as set forth in claim 2, in addition to the first heating means for heating the reaction chamber from above and the second heating means for heating from below, the outer peripheral surface side of the reaction outer tube By disposing the third heating means for heating the reaction chamber, it is possible to heat the reaction chamber not only from the vertical direction but also from the outer peripheral direction to heat the substrate from all directions.
Therefore, radiant energy can be prevented from leaking from the side of the reaction chamber, and the substrate can be heated more uniformly.

According to the third aspect of the invention, the process gas is introduced from the introduction port formed on the upper side surface of the reaction outer tube, and the process gas is passed through the gap between the double cylinders of the reaction outer tube and the reaction inner tube. By discharging, it is possible to lengthen the discharge route. As a result, it is possible to prevent the back diffusion of the outside air into the reaction chamber and to smoothly introduce and discharge the process gas.

According to the invention described in claim 4, the required operating electric power of the measuring means and the converting means is supplied through the bearing that rotatably supports the reaction tube, and the temperature from the converting means is supplied. By transmitting the signal, the measuring means and the converting means provided in the rotating reaction inner tube can be operated, and the actual temperature in the reaction chamber can be accurately known.

Further, according to the invention as defined in claim 5, the measuring means and the conversion means are arranged via the first coil arranged in the reaction inner tube and the second coil arranged in the reaction outer tube. By supplying the required operating electric power of the means and the modulating means and transmitting the modulated signal obtained by modulating the temperature signal, it is possible to operate each means arranged in the rotating reaction inner tube, You can know the actual temperature accurately.

According to the invention of claim 6, the first heating means for heating the reaction chamber or the first heating means and the third heating means are brought closer to the reaction outer tube by the moving means. By doing so, the reaction chamber can be rapidly heated, and by separating them from each other, heat dissipation from the reaction chamber can be promoted. In addition, the radiant energy from the heating means can be blocked by inserting a heat insulating shutter between the heating means and the reaction outer tube in a separated state. Therefore, the temperature in the reaction chamber can be raised and lowered at high speed.

Further, according to the invention described in claim 7, by forming the reaction outer tube in a stepped cylindrical shape and disposing the third heating means in the stepped portion, the reaction chamber is heated from below. The second heating means for heating and the third heating means for heating from the side can be brought close to each other in a plan view. Therefore, not only can the reaction chamber be heated more uniformly, but also radiant energy can be prevented from leaking from the reaction chamber.

[0022]

BEST MODE FOR CARRYING OUT THE INVENTION An embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is a schematic vertical sectional view of a substrate heat treatment apparatus according to the present invention, and FIG. 2 is a block diagram showing a control system.

In the figure, reference numeral 1 is a reaction outer tube having a cylindrical shape, and the cylindrical axis is arranged along the vertical direction. The inner diameter of the upper portion 1a of the reaction outer tube 1 is formed so as to be smaller than the outer diameter of the reaction inner tube 5 described later, and has a convex vertical cross section. Stepped portion 1b extending laterally from the upper portion 1a
The lower portion 1c is formed through the above, and the inner diameter is formed to be slightly larger than the outer diameter of the reaction inner tube 5 described later. The lower portion 1c of the outer reaction tube 1 is fixed to the upper surface of a base 3 whose position is fixed.

Inside the reaction outer tube 1, a reaction inner tube 5 made of quartz and formed in a cylindrical shape is arranged. This reaction inner tube 5
Has an outer diameter slightly smaller than the inner diameter of the lower portion 1c of the reaction outer tube 1, and is arranged so that the peripheral edge of the upper surface thereof is close to the lower surface of the stepped portion 1b. A reaction chamber 7 is formed between the inner upper surface of the outer reaction tube 1 and the outer upper surface of the inner reaction tube 5, and five substrates W are stacked and supported on the upper surface of the inner reaction tube 5 at regular intervals. Holding unit 9 for holding the substrate W in the reaction chamber 7
(Holding means) is erected. The lower end of the reaction inner tube 5 is fixed to the upper part of the hollow rotary table 11. An annular bearing 12 (12a to 12d) that rotatably supports the rotary table 11 is provided on the mounting member 13 provided on the inner peripheral surface of the base 3. The holding unit 9 may not support the plurality of substrates W in a stacked manner, but may support the substrates W in an upright state in a radial manner in a plan view. Further, it is not limited to a plurality of substrates and may support only one substrate W.

The gear 1 is provided on the lower inner surface of the rotary table 11.
5 is arranged, and the motor 1 is arranged on the base 13.
7 (driving means) and a drive gear 19 attached to a rotary shaft extending in the vertical direction, the reaction inner tube 5 is rotated around the vertical axis together with the rotary table 11. A column 21 is erected on the bottom of the mounting member 13, and a resistance heating type lower heater unit 23 (second heating means) is disposed on the upper end of the column 21. The lower heater unit 23 heats the reaction chamber 7 from below. An upper heater unit 25, which corresponds to the first heating means of the present invention, is disposed at an opposing position sandwiching the reaction chamber 7 from the lower heater unit 23, and is disposed adjacent to the upper heater unit 25. The formed annular side surface heater unit 27 (third heating means) is configured to substantially match the outer shape of the upper portion 1a and heats the reaction chamber 7 from the upper and side surfaces. The upper heater unit 25 and the side heater unit 27 are integrally moved up and down along the vertical direction by a heater unit elevating mechanism 29 corresponding to the moving means of the present invention to approach / separate from the reaction chamber 7 (in FIG. 1). The two-dot chain line). Further, on the side of the upper heater unit 25 and the side heater unit 27 (on the left side in FIG. 1), a heat insulating shutter 31 that can be moved back and forth in the horizontal direction.
The shutter moving mechanism 33 is configured to be insertable into and removable from the gap between the upper heater unit 25 and the side heater unit 27 and the reaction chamber 7.

A process gas is introduced into the reaction chamber 7 through an introduction port 35 formed at a part of the upper portion 1a. Examples of the process gas include nitrogen and oxygen. The process gas introduced into the reaction chamber 7 is exhausted from the exhaust port 37 formed at one portion of the outer peripheral surface of the base 3 through the gap between the reaction outer tube 1 and the reaction inner tube 5. The vertical height L from the bottom surface of the reaction chamber 7 to the exhaust port 37 is preferably 100 mm or more. By setting the height to this level, it is possible to prevent outside air from flowing into the reaction chamber 7 (back diffusion) when the exhaust port 37 is opened, and to keep the purity of the process gas constant. In this way, the process gas can be smoothly introduced and exhausted by forming a long path to exhaust the process gas and exhausting the process gas from around the bottom of the reaction chamber 7. Therefore, the purity of the process gas can be maintained and the temperature in the reaction chamber 7 can be stably maintained. The temperature in the reaction chamber 7 is measured by a thermocouple 39 (measuring means) attached to the bottom surface of the reaction chamber 7 (upper surface of the reaction inner tube 5), and signal processing attached to the inner peripheral surface of the reaction inner tube 5 is performed. The voltage is converted by the unit 41 (conversion means). Then, the temperature is fed back to the controller 53, which will be described later, and is controlled so as to exactly match the processing temperature.

The reaction inner tube 5, the rotary table 11, the column 21, and the lower heater unit 23 are moved up and down together with the mounting member 13 by the rotary table lifting mechanism 43. When the unprocessed substrate W is placed in the reaction chamber 7 or the processed substrate W is taken out of the reaction chamber 7, the rotary table elevating mechanism 43 lowers the mounting member 13 with respect to the base 3 (see FIG. 1). The two-dot chain line).

Referring to FIG. As mentioned above, thermocouple 3
The electromotive force, which is a physical quantity related to the temperature in the reaction chamber 7 measured by 9, is converted into a temperature signal representing the temperature in the reaction chamber 7 by the signal processing unit 41. The required operating power of the signal processing unit 41 is supplied from the AC power supply 51, but since the signal processing unit 41 is arranged inside the rotated reaction inner tube 5, it is necessary to devise its supply. In this embodiment, required operating electric power is supplied through a bearing 12 that rotatably supports the reaction inner tube 5 together with the rotary table 11. That is, the four bearings 12 (12a-1
The two bearings 12c and 12d of 2d) are used, the AC power supply 51 is connected to the outer peripheral portions which are the position fixing sides thereof, and the signal processing unit 4 is connected from the inner peripheral portion which is the rotating side thereof.
Connect the wiring to 1. As a result, the required operating electric power can be supplied to the signal processing unit 41 that rotates together with the reaction inner tube 5. Further, the temperature signal output from the signal processing unit 41 is similarly transmitted to the outside. That is, the signal processing unit 4 is provided on the inner peripheral portion on the rotating side of the bearings 12a and 12b.
1 is connected to the output terminal of the controller 53, and the signal input terminal of the controller 53 is connected to the outer peripheral portion of the position fixing side.

The controller 51 includes the motor 1 described above.
7, an upper heater unit 25, a side heater unit 27, a lower heater unit 23, a heater unit elevating mechanism 29, a shutter moving mechanism 33, and a rotary table elevating mechanism 43 are connected, and these are integrally controlled. To do. A display unit 55 that displays the temperature of the reaction chamber 7 is also connected so that the operator can monitor whether or not the temperature control by the controller 53 is normally performed.

Next, the operation of the apparatus configured as described above will be described with reference to FIGS. 3 and 4. First,
The rotary table lifting mechanism 43 is driven to drive the rotary table 1
1 is lowered together with the mounting member 13. As a result, the upper surface of the reaction inner tube 5 moves below the base 3, so that the holder 9 holds the unprocessed substrate W. At this time, in order to quickly heat the substrate W, each heater unit 23,
25 and 27 are already controlled to the processing temperature of the substrate W,
It is preferable that a predetermined process gas is supplied from the introduction port 35 in order to maintain the gas in a clean state and an appropriate atmosphere.

Next, the rotary table elevating mechanism 43 is driven to raise the rotary table 11 as shown in FIG. 1, and the substrate W is held in the reaction chamber 7 for a certain period of time. At this time, the actual temperature of the reaction chamber 7 is measured by the thermocouple 39 which is in contact with the back surface of the lowermost substrate W among the five substrates W, and is feedback-controlled by the controller 53 based on the temperature signal. Further, during the heat treatment, the motor 17 is constantly driven to rotate the reaction inner tube 5 at a low speed (for example, 1 rpm). As a result, it is possible to prevent the temperature unevenness caused by the heater units 23, 25, 27 from affecting the substrate W. Further, as described above, since the outer reaction tube 1 is formed in a convex shape (upper portion 1a, stepped portion 1b, lower portion 1c), the side heater unit 27 and the lower heater unit 2 are formed.
The horizontal distance from 3 is shorter. Therefore,
Can be heated almost uniformly from all directions,
It is possible to prevent radiant energy from leaking from the reaction chamber 7,
The uniformity during heat treatment can be improved.

When the heat treatment is completed after a certain period of time has passed, as shown in FIG.
Is driven to raise the upper heater unit 25 and the side heater unit 27. The side heater unit 27
Since an inverted U-shaped cutout is formed at one portion of the above, the introduction port 35 formed in the upper portion 1a of the reaction outer tube 1 does not interfere. Further, the shutter moving mechanism 33 is driven so that the heat insulating shutter 31 is interposed between them.
Each heater unit 2 raised by inserting
Radiant heat from 5, 27 can be completely blocked.
As a result, the heat radiation of the reaction chamber 7 is greatly promoted, and the temperature lowering performance can be greatly improved as compared with the case where the temperature of the heater units 25 and 27 is simply lowered. Therefore, it is possible to shorten the time from completion of the heat treatment to taking out the processed substrate W in the state of FIG. 3, and it is possible to improve the throughput of the apparatus.

As described above, the reaction outer tube 1 and the reaction inner tube 5 form a double cylinder, and by rotating only the reaction inner tube 5, the bottom surface of the reaction chamber 7 can be rotated and the substrate W can be rotated. it can. Therefore, it is not necessary to adopt a structure that penetrates the lower heater unit 23 that heats the reaction chamber 7 from below, and the reaction chamber 7 can be heated substantially uniformly from all directions of up, down, left and right. Therefore, even when the large-diameter substrate W is heat-treated, it can be uniformly heated in the radial direction, and the temperature distribution can be kept within the required ± 0.5 ° C.

Next, in the above example, the temperature signal and the required operating power are transmitted by the contact type using the four bearings 12, but they are also transmitted by the non-contact type using the coil method as shown in FIG. Can be transmitted. In the configuration described below, it is not necessary to dispose a plurality of bearings 12 as described above, and only one bearing 12 needs to be disposed, so that the height of the device can be reduced.

That is, a pair of first coils 61 and a pair of second coils 63 are provided, and temperature signals and required operating power are transmitted by the pair of coils 61 and 63, respectively. For example, one of the pair of first coils 61 (the first coil of the present invention) and one of the pair of the second coils 63 (the first coil of the present invention) rotate the rotary table 11 or the reaction inner tube. 5 are arranged concentrically on the inner peripheral surface of the base 5, and the other of them (the second coil of the present invention) is used as the base 3
Alternatively, they are arranged concentrically on the inner peripheral surface of the mounting member 13. The signal processing unit 65 corresponds to the conversion means of the present invention.
The / V converter 67 converts the electromotive force of the thermocouple 39 into a voltage value (temperature signal) according to the temperature, the V / F converter 69 converts the temperature signal into an AC signal, and then the modulation means of the present invention. The modulation unit 71 corresponding to is configured to perform FM modulation, for example. The modulated temperature signal (modulation signal) is spatially transmitted from one of the pair of first coils 61 to the other by electromagnetic induction, electromagnetic coupling, or electromagnetic waves. The spatially transmitted modulated signal is demodulated by the demodulation unit 73 and further F / V
The converter converts the DC signal (temperature signal) and outputs the DC signal to the controller 53. In order to prevent interference between the pair of first coils 61 and the pair of second coils 62, it is preferable that the carrier frequency in the modulator 71 be different from the frequency of the AC power supply 51. Further, in the case of the structure for performing the spatial transmission by the electromagnetic induction, the electromagnetic coupling or the electromagnetic wave as described above, the pair of first coils 6
Since it is not necessary to exactly match the coil axis of each pair of the first coil and the pair of second coils 63, the degree of freedom in device design can be made relatively high.

When a plurality of thermocouples 39 are provided in the reaction chamber 7, if the temperature signals are transmitted (time division transmission) in a predetermined order in a predetermined cycle, the plurality of thermocouples 39 will be transmitted.
Even in the case where the temperature is measured at a plurality of points by the above, it can be dealt with by the above configuration. When a plurality of thermocouples 39 are arranged in this way, the temperature distribution is controlled to be more uniform by individually controlling one of the heater units 23, 25, 27 close to each thermocouple 39. can do.

Further, instead of the above-mentioned coil, a double annular electrode is provided to form a capacitor, and electrostatic coupling between them is used (capacitor method) to transmit a temperature signal and required operating power. You can go. Alternatively, optical coupling such as a photo coupler may be used (optical coupling method). Furthermore, the bearing method, the coil method, the capacitor method, and the optical coupling method described above may be combined.

In the above-mentioned apparatus, the thermocouple 39 was described as an example of the measuring means for measuring the temperature of the reaction chamber 7, but instead of this, for example, a radiation thermometer may be adopted.

The heating means is not limited to the resistance heating type heater units 23, 25 and 27 described above, but an infrared ray having a plurality of infrared lamps mounted on a water-cooling type or air-cooling type infrared reflecting mirror. It may be a lamp type.

Further, the above-mentioned apparatus is provided with the side heater unit 27 in addition to the lower heater unit 23 and the upper heater unit 25, but the upper / lower heater units 23, 25 alone ensure a predetermined soaking length. If so, the side heater unit 27 need not be provided. If it is not necessary to rapidly cool the heat-treated substrate W, the heater unit elevating mechanism 29, the heat insulating shutter 31, and the shutter moving mechanism 33 are unnecessary.

Further, the reaction outer tube 1 is provided with an upper part 1a,
Forming the stepped portion 1b and the lower portion 1c in a convex shape in the vertical cross section is not an essential requirement of the present invention, and may be a simple tubular shape having an inner diameter slightly larger than the outer diameter of the reaction inner tube 5.

[0042]

As is apparent from the above description, according to the invention described in claim 1, the second heating means is constituted by the mechanism in which the reaction chamber is constituted by the double cylinder and only the reaction inner tube is rotated. Does not interfere with the rotation mechanism, and the substrate can be uniformly heated in the vertical direction by the first heating means and the second heating means. Therefore, even a large-diameter substrate can be heated with uniform temperature distribution in the radial direction.

According to the second aspect of the invention, the reaction chamber can be heated from all directions by providing the third heating means for heating from the outer peripheral surface side of the reaction outer tube. Therefore, radiant energy can be prevented from leaking from the side of the reaction chamber, and the substrate can be heated more uniformly. Further, in order to obtain the same soaking length as in the case of heating only from the vertical direction, the length of the upper and lower heating means can be shortened by the effect of heating from the side, so that the apparatus can be downsized.

According to the third aspect of the invention, the process gas discharge path can be lengthened, so that the outside air can be prevented from back-diffusing into the reaction chamber, and the process gas can be smoothly introduced and discharged. can do. As a result, the purity of the process gas can be maintained and the temperature in the reaction chamber can be stably maintained. Therefore, the substrate can be heat-treated more uniformly.

According to the invention described in claim 4, the measuring means and the converting means arranged in the rotating reaction inner tube can be operated, and the actual temperature inside the reaction chamber can be accurately known. You can By feeding back this temperature to the controller, it is possible to control each heating means and perform heat treatment more accurately.

Further, according to the invention of claim 5, a measuring means arranged in the rotating reaction inner tube, a converting means,
The modulating means can be operated, and the actual temperature in the reaction chamber can be accurately known. By feeding back this temperature to the controller, it is possible to control each heating means and perform heat treatment more accurately. In addition, since it is transmitted by electromagnetic waves or electromagnetic coupling, the first
Since it is not necessary to accurately match the axes of the coil and the second coil, the degree of freedom in device design can be made relatively high.

According to the sixth aspect of the invention, the reaction chamber can be rapidly heated by bringing the first or first and third heating means close to the reaction outer tube by the moving means. It is possible to promote the heat radiation from the reaction chamber by separating them. Further, by inserting an adiabatic shutter between the first or first and third heating means and the reaction outer tube, the radiant energy from the heating means can be blocked. Therefore, since the temperature in the reaction chamber can be raised and lowered at high speed, the throughput of heat treatment can be improved.

Further, according to the invention described in claim 7, by forming the reaction outer tube in a stepped cylindrical shape, the second heating means for heating from below and the third heating means for heating from the side are provided. Can be approached in a plan view. Therefore, not only can the reaction chamber be heated more uniformly, but also radiant energy can be prevented from leaking from the reaction chamber.

[Brief description of drawings]

FIG. 1 is a schematic vertical sectional view of a substrate heat treatment apparatus according to an embodiment.

FIG. 2 is a block diagram showing a control system.

FIG. 3 is a diagram for explaining the operation of the apparatus.

FIG. 4 is a diagram for explaining the operation of the apparatus.

FIG. 5 is a diagram showing a modification of the control system.

FIG. 6 is a diagram showing a schematic configuration of a vertical diffusion furnace according to a conventional example.

FIG. 7 is a diagram showing a schematic configuration of a lamp annealing apparatus according to a conventional example.

[Explanation of symbols]

W ... Substrate 1… Reaction tube 1a ... top 1b ... Stepped portion 1c ... bottom 5… Reaction inner tube 7… Reaction chamber 9 ... Holding part (holding means) 12 (12a-12d) ... Bearing 17 ... Motor (driving means) 23 ... Lower heater unit (second heating means) 25 ... Upper heater unit (first heating means) 27 ... Side heater unit (third heating means) 29 ... Heater unit lifting mechanism (moving means) 31… Adiabatic shutter 35 ... Introduction port 37 ... Exhaust port 39 ... Thermocouple (measuring means) 41 ... Signal processing unit (conversion means)

─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. ⁷ Identification code FI H01L 21/324 H01L 21/324 Q H05K 3/22 H05K 3/22 Z // H05B 3/00 310 H05B 3/00 310D (58 ) Fields surveyed (Int.Cl. ⁷ , DB name) H01L 21/31 C23C 14/50 C23C 16/44 H01L 21/22 511 H01L 21/324 H05K 3/22 H05B 3/00 310

Claims (7)

(57) [Claims] 1. A substrate heat treatment apparatus for performing heat treatment on a substrate, comprising: a cylindrical reaction outer tube arranged along a vertical direction; and a cylindrical reaction inner tube arranged inside the reaction outer tube. A tube, a holding means arranged on the outer upper surface of the reaction inner tube, for holding the substrate in a reaction chamber formed between the inner upper surface of the reaction outer tube and the outer upper surface of the reaction inner tube, and the reaction means. Driving means for rotating the inner tube around a vertical axis, first heating means for heating the reaction chamber from the outer upper surface side of the reaction outer tube, and the reaction chamber from the inner lower surface side of the reaction inner tube And a second heating unit for heating the substrate. 2. The substrate heat treatment apparatus according to claim 1, further comprising third heating means for heating the reaction chamber from the outer peripheral surface side of the reaction outer tube. 3. The substrate heat treatment apparatus according to claim 1 or 2, wherein an introduction port for introducing a process gas into the reaction chamber is provided on an upper side surface of the reaction outer tube and introduced into the reaction chamber. A substrate heat treatment apparatus, wherein the process gas is exhausted to the outside through a gap between the inner peripheral surface of the reaction outer tube and the outer peripheral surface of the reaction inner tube. 4. The substrate heat treatment apparatus according to claim 1, wherein the reaction means includes a measuring means for measuring a physical quantity related to the temperature in the reaction chamber and a converting means for converting the physical quantity into a temperature signal. It is characterized in that the required operating electric power of the measuring means and the converting means and the temperature signal from the converting means are transmitted through a bearing which is provided in the inner tube and rotatably supports the reaction inner tube. Substrate heat treatment equipment. 5. The substrate heat treatment apparatus according to claim 1, further comprising: a measuring unit that measures a physical quantity related to the temperature in the reaction chamber; and a converting unit that converts the measured physical quantity into a temperature signal. A modulation means for modulating the temperature signal is provided in the reaction inner tube, and the first inner coil arranged in the reaction inner tube and the second coil arranged in the outer reaction tube A substrate heat treatment apparatus, characterized in that a required operating power of the measuring means, the converting means, and the modulating means is transmitted, and a modulation signal from the modulating means is transmitted. 6. The substrate heat treatment apparatus according to claim 1, wherein said first heating means or said first heating means and said third heating means are brought close to said reaction outer tube. The moving means for separating, the reaction outer tube and the first heating means are separated from each other between the first heating means and the reaction outer tube, or the first heating means and the third heating means. A substrate heat treatment apparatus comprising: a heat insulating shutter that can be inserted between a heating means and the reaction outer tube. 7. The substrate heat treatment apparatus according to claim 2, wherein a diameter of an upper portion of the reaction outer tube is smaller than an outer diameter of the reaction inner tube to form a stepped cylinder, and the third outer tube is formed.
A heat treatment apparatus for substrates, wherein the heating means is disposed on the outer peripheral surface of the stepped portion.