JP3323384B2 - Substrate cleaning apparatus and substrate cleaning method - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an improvement in a substrate cleaning technique, and more particularly, to a capability of removing foreign matter adhering to a surface to be cleaned of a substrate and a capability of discharging the removed foreign matter from the substrate to the outside. It relates to the technology for achieving compatibility.

[0002]

2. Description of the Related Art As is well known, substrates such as glass substrates and semiconductor wafers for liquid crystal display devices are subjected to surface treatment with various treatment liquids. After these processes, it is necessary to remove the residual processing solution from the substrate. It is also important to remove particles attached to the substrate. A cleaning process of the substrate is performed to remove such foreign matter, and the cleaning method for that is roughly classified into a chemical cleaning and a physical cleaning.

[0003] Among them, chemical cleaning uses pure water, neutral or alkaline cleaning liquid,
In addition, there is a method using ozone water in which ozone is dissolved in a cleaning liquid. Since such chemical cleaning is based on chemical melting, it is effective for removing relatively fine foreign matter and foreign matter chemically bonded to the substrate, but is effective for removing relatively large foreign matter. Is small. For this reason, physical cleaning is often used in addition to chemical cleaning.

[0004] On the other hand, there are various types of physical cleaning, and since they have advantages and disadvantages, it is difficult to sufficiently perform physical cleaning by using only one method. Therefore, in practice, a plurality of physical cleaning methods are often combined.

[0005]

Therefore, it has been proposed that a plurality of physical cleaning methods be performed in parallel in a single apparatus. For example, Japanese Patent Application Laid-Open No. 7-86218 discloses a brush cleaning method in which a rotating brush is used for cleaning. An apparatus for simultaneously performing an ultrasonic cleaning method of cleaning with a liquid subjected to ultrasonic vibration is disclosed.

Performing a plurality of cleaning methods in one apparatus as in this technique is related to the required cleaning time. In other words, with the recent increase in the size of substrates, there has been an increasing demand for shortening the time required for the cleaning process. If the cleaning devices of different types are arranged in series and the cleaning process is performed sequentially, the This is due to the problem that the cleaning time is shortened and the cleaning ability is not maintained.

[0007]

However, another problem arises when an apparatus including a brush cleaning system is used as disclosed in Japanese Patent Laid-Open No. 7-86218. In other words, although the brush cleaning method is excellent in the ability to remove foreign substances, there is a problem that the surface of the substrate is damaged such as a scratch because it is a contact type physical cleaning.

SUMMARY OF THE INVENTION The present invention has been made to overcome the above-mentioned problems of the prior art, and can exhibit an excellent cleaning ability without damaging the substrate, and has a high time efficiency of the cleaning process. The purpose is to provide cleaning technology.

In particular, the present invention aims at achieving both the ability to remove foreign matter attached to the surface to be cleaned of the substrate and the ability to discharge the removed foreign matter from the substrate to the outside.

[0010] In this specification, "foreign matter"
In addition to the remaining processing liquid applied in the pre-cleaning process,
It is a generic term for objects to be removed by cleaning, such as particles.

[0011]

In order to achieve the above object, the present invention is configured to perform a combined cleaning of an ultrasonic cleaning system and a high-pressure cleaning system. Before describing the advantages, a review of the advantages and disadvantages of each of these cleaning schemes follows.

<Advantages and disadvantages of ultrasonic cleaning alone> First, in the ultrasonic cleaning method, in order to perform cleaning while supplying a relatively large amount of liquid, foreign substances are quickly supplied to the substrate by newly supplying a cleaning liquid. It has the property of being rich in the effect of being discharged from the substrate surface to the outside together with the cleaning liquid (liquid replacement property). However, since the foreign substance removing action by the ultrasonic wave is not so strong, it is difficult to remove the foreign substance firmly attached to the substrate surface by the ultrasonic cleaning alone.

<Advantages and disadvantages of high-pressure cleaning alone> On the other hand, the high-pressure cleaning system is a system for removing foreign substances by the mechanical action of a high-pressure cleaning jet, and has an advantage of being excellent in foreign substance removing action. However, in this method, since only a relatively small amount of liquid is ejected, the high-pressure cleaning method alone has poor liquid replacement properties, and in this method, the problem of reattachment of foreign matter remains.

Increasing the ejection pressure of the high-pressure cleaning jet can solve such a problem of re-adhesion to some extent, but increasing the ejection pressure tends to damage the substrate surface and damages the circuit pattern formed on the substrate surface. New problems such as generation of unevenness and uneven cleaning remain.

<Advantages of Combined Cleaning of Ultrasonic Cleaning and High-Pressure Cleaning> Therefore, the present invention is configured to perform combined cleaning of the ultrasonic cleaning method and the high-pressure cleaning method. When such a configuration is employed, not only the foreign matter removed by the ultrasonic cleaning but also the foreign matter removed by the high-pressure cleaning is quickly removed from the substrate by the flow of a relatively large amount of liquid supplied in the ultrasonic cleaning. It is discharged outside.
Therefore, it is possible to prevent the removed foreign matter from re-adhering to the substrate surface while utilizing the strong cleaning ability of the high-pressure cleaning, which is a new unique characteristic generated by combining the high-pressure cleaning with the ultrasonic cleaning. Action.

Further, by combining the high-pressure cleaning with the ultrasonic cleaning, the foreign matter removing ability as a whole is enhanced. Therefore, it is not necessary to increase the pressure of the high-pressure cleaning jet in the high-pressure cleaning so much. No generation of cleaning unevenness occurs.

That is, in the present invention, the foreign matter removing ability in the high-pressure cleaning and the foreign matter discharging ability in the ultrasonic cleaning work synergistically, so that an effect equal to or more than the sum of these individual actions is produced.

[0018]

According to the above principle, the present invention has the following specific structure.

<First Invention> In a first invention, in an apparatus for cleaning a substrate, (a)
Ultrasonic cleaning means for performing ultrasonic cleaning of the substrate by emitting ultrasonic waves to the liquid while discharging the liquid toward the substrate,
(b) high-pressure cleaning provided at a different position from the ultrasonic cleaning means and performing high-pressure cleaning of the substrate by ejecting high-pressure liquid toward a range where the liquid from which ultrasonic waves are emitted is present on the substrate; Means, wherein the high-pressure cleaning means comprises the supersonic
Is discharged from the wave cleaning means and reaches the surface to be cleaned of the substrate.
Ultrasonic wave flowing along the surface to be cleaned from its reaching point
The apparatus is configured as a substrate cleaning apparatus that performs combined cleaning of the ultrasonic cleaning and the high-pressure cleaning on the substrate so as to eject the high-pressure liquid toward the cleaning liquid .

<Second Invention> According to the present invention, in the substrate cleaning apparatus of the first invention, (c) substrate rotating means for rotating the substrate in a predetermined direction is further provided, and the substrate is rotated while rotating the substrate. Perform a combined wash. This is an application form to a so-called spin scrubber or the like.

<Third invention> In this configuration, in the substrate cleaning apparatus according to the second invention, the ultrasonic cleaning means may include (a-
1) Along with an ultrasonic cleaning nozzle that discharges the liquid from which the ultrasonic waves are emitted toward the ultrasonic cleaning line defined on the surface to be cleaned of the substrate from a slit, the high-pressure cleaning means includes (b- 1) A high-pressure cleaning nozzle for ejecting the high-pressure liquid toward a high-pressure cleaning spot defined on the surface to be cleaned of the substrate is provided.

As in the case of the ultrasonic cleaning, the high-pressure cleaning may be jetting using a slit, but effective cleaning is performed with a relatively low jet fluid pressure, and the ultrasonic vibration of the cleaning solution is maintained to the maximum. For this purpose, spot injection is more preferable as in this configuration.

<Fourth Invention> In this configuration, in the substrate cleaning apparatus of the third invention, (d) a path passing above the center of rotation of the substrate and substantially parallel to a surface of the substrate. And a high-pressure washing nozzle swinging means for swinging the high-pressure washing nozzle.

By oscillating the high-pressure cleaning nozzle in this manner, a cavitation effect is generated by bubbling inside the cleaning liquid supplied to the substrate surface, and the cleaning capability is further increased.

<Fifth Invention> According to a fifth invention, in an apparatus for cleaning a substrate, (a)
Ultrasonic waves are emitted to the liquid while discharging the liquid toward the substrate
Ultrasonic cleaning means for performing ultrasonic cleaning of the substrate and
(b) provided at a different position from the ultrasonic cleaning means,
The range where the liquid from which the sound wave was emitted exists on the substrate
High pressure cleaning of the substrate by jetting high pressure liquid toward
High-pressure cleaning means, and (c) rotating the substrate in a predetermined direction
Substrate rotating means, and (d) passing above a rotation center of the substrate.
Along a trajectory substantially parallel to the plane of the substrate
High pressure washing nozzle swing means for swinging the high pressure washing nozzle
Wherein the ultrasonic cleaning means (a-1)
Toward the ultrasonic cleaning line specified on the cleaning surface,
A supersonic sound that discharges the liquid from which the sound wave was emitted from the slit
Equipped with a wave cleaning nozzle, the high-pressure cleaning means, (b-1)
To the high-pressure cleaning spot defined on the surface to be cleaned of the substrate
A high-pressure washing nozzle that ejects the high-pressure liquid,
While rotating the substrate, the ultrasonic
A position where the combined cleaning of the wave cleaning and the high-pressure cleaning is performed, and the high-pressure cleaning spot scans the substrate near the ultrasonic cleaning line and before the ultrasonic cleaning line in the rotation of the substrate. Group set to
It is configured as a plate cleaning device .

The advantages of the fifth embodiment will be described in detail in the following embodiments.

<Sixth invention> In this configuration, in the substrate cleaning apparatus according to the fifth invention, the high-pressure liquid cleaning spot is located at one of the two end points of the ultrasonic cleaning line that is farther from the rotation center of the substrate. Is set so as to be biased toward the side.

The advantages of the structure of claim 6 will be described in detail in the description of the embodiment.

<Seventh to Twelfth Inventions> These inventions are method inventions corresponding to the first to sixth device inventions, respectively, and their structures and operations are described in the description of the structure of the above device invention and the following. Since it can be understood from the description of the embodiment, the repeated description here will be omitted. <Thirteenth and Fourteenth Inventions> These inventions are based on a high pressure
Preferred ranges are specified.

[0030]

BEST MODE FOR CARRYING OUT THE INVENTION

<Outline of Overall Mechanism and Operation> FIG. 1 is a perspective view of a main part of a substrate processing apparatus 100 which is an embodiment common to the first to twelfth inventions. The substrate processing apparatus 100 is configured to perform a combined cleaning of ultrasonic cleaning and high-pressure cleaning on the surface of the glass substrate 1 for a liquid crystal display device in parallel with time. The substrate cleaning apparatus 100 is classified as a so-called spin scrubber.

In FIG. 1, the chuck for holding the substrate 1 has a cross-shaped arm 2, and the four corners of the substrate 1 are engaged with a plurality of pins 3 erected at the tip of the arm 2. Then, the substrate 1 is rotated in a horizontal plane in the θ1 direction in FIG.
The drive source for this rotation is the motor M1, but for convenience of illustration, the connection relationship between the motor M1 and the chuck is not shown in FIG.

For cleaning the substrate 1, a combined cleaning mechanism 50 of ultrasonic cleaning and high pressure cleaning is provided. In this combined cleaning mechanism 50, an arm 52 is connected to a column 51, and the column 51 and the arm 52 can be pivoted in the θ2 direction by a motor M2 (the connection relationship is not shown).
The ultrasonic cleaning nozzle 10 is fixed to the tip of the arm 52. The ultrasonic cleaning nozzle 10 has an internal configuration to be described later, and discharges the cleaning liquid from which ultrasonic waves are emitted from the slit to the surface of the substrate 1 in a curtain shape.

FIG. 2A is a conceptual front perspective view of the ultrasonic cleaning nozzle 10, and FIG. 2B is a conceptual plan perspective view (part) of the ultrasonic cleaning nozzle 10. The ultrasonic cleaning nozzle 10 emits ultrasonic waves from the ultrasonic vibrator 11 to the cleaning liquid F introduced from the cleaning liquid introduction port 12, and discharges the cleaning liquid F from the lower slit 13. The length of the slit 13 is, for example, 80 mm, and its width is, for example, 2 mm.

The ultrasonic vibrator 11 is supplied with a high frequency vibration voltage.
MHz to 2.0 MHz, more preferably 1.
It is 2 MHz to 1.8 MHz.

The cleaning liquid inlet 12 is connected to a resin tube 15, which passes through an arm 52 (see FIG. 1) and the inside of a column 51, and is connected to a cleaning liquid supply section via a spiral tube 60. .

A preferable range of the supply amount of the ultrasonic cleaning liquid F is 7 to 10 liter / min.

On the other hand, a connecting arm 53 extends from the ultrasonic cleaning nozzle 10 of FIG.
4, a high-pressure washing nozzle 20 is attached.
A small hole (for example, 0.2 mm in diameter) having a circular cross section is formed at the tip of the high-pressure cleaning nozzle 20.
The high-pressure cleaning jet J supplied via the nozzle 5 is jetted in a beam-like shape. This tube 25 also has an arm 52
And the inside of the column 51 and the spiral tube 6
0 is connected to the high-pressure cleaning liquid supply unit.

The pressure of the high-pressure cleaning liquid applied to the high-pressure cleaning nozzle 20 is preferably 5 kg / cm ^{2 to} 15 kg /
cm ² , and more preferably 8 kg / cm ² to 10
kg / cm ² . An example of a desirable value for the supply amount of the high-pressure cleaning liquid is 0.05 liter / min.

The connecting member 54 is connected to the connecting arm 53 by φ
It can be swiveled in one direction.
Numeral 0 is rotatable in the φ2 direction with respect to the relay member 54.
Therefore, the direction of the high-pressure cleaning nozzle 20 can be arbitrarily adjusted manually. This adjustment is performed in a preparatory stage before actually performing the cleaning. During the cleaning by the combined cleaning mechanism 50, the direction of the high-pressure cleaning nozzle 20 is fixed to the adjusted direction. .

The details of the positional relationship between the ultrasonic cleaning and the high-pressure cleaning, and the effects thereof, will be described later in detail.
Here, an outline of the mechanical operation of the device 100 will be described.

Before the substrate 1 is carried into the substrate cleaning apparatus 100, the arm 52 and each member fixed thereto are retracted in the direction of the imaginary line in FIG. When the substrate 1 is placed on the cross arm 2 of the chuck by the transfer robot, the arm 52 and each member fixed thereto move to the solid line position in FIG. 1 by turning in the θ2 direction. Then, with the start of high-speed rotation of the substrate 1, the discharge of the ultrasonic cleaning liquid from the ultrasonic cleaning nozzle 10 and the ejection of the high-pressure cleaning jet J from the high-pressure cleaning nozzle 20 are performed.
2 reciprocates around the θ2 direction, whereby the ultrasonic cleaning nozzle 10 and the high-pressure cleaning nozzle 20 oscillate along an arc trajectory in a horizontal plane above the substrate 1. Thus, each part of the upper surface of the substrate 1 is scanned by the combined cleaning of the ultrasonic cleaning and the high pressure cleaning.

After the completion of the cleaning, the nozzles 10 and 20 are retracted together with the arm 52, and after the cleaning liquid remaining on the substrate 1 is turned off (spin dry), the rotation of the substrate 1 is stopped. Then, the substrate 1 is unloaded in a process reverse to the process of loading the substrate.

Although not shown in FIG. 1, the cleaning liquid discharged from the substrate 1 is collected and discharged by a cup.

<Positional Relationship Between Ultrasonic Cleaning and High-Pressure Cleaning> FIG. 3 is an enlarged view of the ultrasonic cleaning nozzle 10 viewed from a direction perpendicular to the longitudinal direction, and FIG. 4 is a transparent view from above the substrate. It is a positional relationship diagram.

Referring first to FIG. Ultrasonic cleaning nozzle 1
The ultrasonic cleaning liquid from 0 is discharged in a curtain shape substantially perpendicularly to the upper surface of the substrate 1.
The position colliding with the surface defines a virtual line (ultrasonic cleaning line) L. As the substrate 1 rotates in the θ1 direction in FIG. 1, the substrate 1 relatively moves in the direction R in FIG. 4 near immediately below the nozzles 10 and 20, but the ultrasonic cleaning line L It extends in a direction crossing the rotation direction R.

Then, as shown in FIG. 3, the cleaning liquid F discharged from the slit 13 of the ultrasonic cleaning nozzle 10 flows to the downstream side (left side in FIG. 3) mainly by this rotation after having spread to some extent.

On the other hand, as shown in FIGS. 3 and 4, the virtual high-pressure cleaning spot P, which is the target of the high-pressure cleaning jet J, is located near the ultrasonic cleaning line L and the rotation of the substrate 1. At R (θ1 in FIG. 1), the position is set at a position where the substrate 1 is scanned before the ultrasonic cleaning line L. These intervals D (FIG. 3) are, for example, 3 mm to 1 mm.
0 mm, the high-pressure cleaning spot P is set within a range where the cleaning liquid F discharged from the slit 13 of the ultrasonic cleaning nozzle 10 exists. Such direction adjustment is realized by adjusting the angle of the high-pressure cleaning nozzle 20 via the relay member 54.

The high-pressure cleaning spot P is set so as to be biased toward one of the two end points E1 and E2 of the ultrasonic cleaning line L. This end point E1 is, as shown in FIG. 5 conceptually showing the swing relationship of the composite cleaning mechanism 50,
It is an end point farthest from the rotation center CP of the substrate 1 among the end points E1 and E2 of the ultrasonic cleaning line L. More specifically,
The high-pressure washing spot P in this embodiment is set near the end point E1, but the reason for giving such a bias will be described later.

<Basic Operation of Combined Cleaning> The basic operation of the combined cleaning of the ultrasonic cleaning and the high-pressure cleaning in this embodiment is as follows (parts relating to the swing scanning will be described later).

As shown in FIG. 3, an arbitrary portion on the substrate 1 moves in the R direction with the rotation of the substrate, and reaches near the lower portion of the ultrasonic cleaning nozzle 10. Therefore, the cleaning is first performed by the high-pressure cleaning jet J, and the ultrasonic cleaning liquid F from the ultrasonic cleaning nozzle 10 exists near the reaching point of the high-pressure cleaning jet J. For this reason, the foreign matter removed by the high-pressure cleaning jet J flows on the downstream side (the left side in FIG. 3) along with the flow of the ultrasonic cleaning liquid F, and is discharged from the surface of the substrate 1 to the outside.

The portion which has been subjected to such high-pressure cleaning is moved to a position immediately below the slit 13 of the ultrasonic cleaning nozzle 10 by the rotation of the substrate 1 and subjected to ultrasonic cleaning at this position, and cannot be removed by high-pressure cleaning. The extraneous matter is removed by ultrasonic cleaning. The foreign matter also flows downstream along with the flow of the ultrasonic cleaning liquid, and is discharged from the surface of the substrate 1 to the outside.

For this reason, the substrate 1 is not only subjected to the high-pressure cleaning and the ultrasonic cleaning, but also the foreign matter removed by the high-pressure cleaning is quickly removed from the substrate 1 together with the foreign matter removed by the ultrasonic cleaning. Will be washed away,
The removed foreign matter does not adhere to the substrate 1 again. As a result, a cleaning effect equal to or greater than the sum of both cleaning capacities is obtained.

By the way, in this embodiment, the high-pressure cleaning spot P is not set on the ultrasonic cleaning line L, but is set on the upstream side (right side in FIG. 3) with a slight interval D from this. This is because the flow rate of the ultrasonic cleaning liquid is appropriate upstream of the ultrasonic cleaning line L, and the high-pressure cleaning jet J reaches the surface of the substrate 1 via the layer of the ultrasonic cleaning liquid F without fail. This is because the efficiency of the process is improved.

In this embodiment, the ultrasonic cleaning liquid F is discharged from the ultrasonic cleaning nozzle 10 at a right angle to the surface of the substrate 1 (the surface to be cleaned). This is related to the fact that the rotation speed of the substrate is usually high and the cleaning mechanism is oscillated in the rotation type substrate cleaning. That is, in general, when the ultrasonic cleaning liquid is discharged substantially at right angles to the surface to be cleaned, the rebound of the ultrasonic cleaning liquid on the surface to be cleaned returns to the ultrasonic cleaning nozzle, and the ultrasonic transducer may be damaged.
For this reason, the ultrasonic cleaning nozzle is often used at an angle to the surface to be cleaned. However, in the case of a substrate that rotates at a high speed as in this embodiment, the rebound of the ultrasonic cleaning liquid on the surface to be cleaned is blown to the downstream side, so that the ultrasonic cleaning liquid rarely returns to the ultrasonic cleaning nozzle. Further, there is also an effect that the ultrasonic cleaning liquid rebounds due to the swing of the cleaning mechanism. Due to such circumstances, in this embodiment, the ultrasonic cleaning liquid F is discharged from the ultrasonic cleaning nozzle 10 at a substantially right angle to the surface of the substrate 1, thereby exerting the maximum ultrasonic cleaning ability. The rotation speed of the substrate 1 is, for example, 500 rpm, and the swing speed of the cleaning mechanism is 200 mm / sec at a position near the nozzle.

The high pressure washing nozzle 20 is shown in FIG.
As described above, the high-pressure cleaning jet is jetted obliquely toward the downstream side of the ultrasonic cleaning liquid. This has the advantage that foreign matter removed by the high-pressure cleaning can easily flow downstream.

Further, in the apparatus of this embodiment, since the combined cleaning of the ultrasonic cleaning and the high-pressure cleaning is performed in parallel in one apparatus in terms of time, the cleaning time can be shortened, and the non-contact type cleaning can be performed. The combination of the methods does not damage the substrate 1.

Further, since sufficient cleaning can be performed by the combination of the ultrasonic cleaning and the high-pressure cleaning, it is not necessary to increase the jet pressure of the high-pressure cleaning so much, and the high-pressure cleaning jet J does not damage the substrate.

<Swing Scan> Next, cleaning by swing scan will be described with reference to FIG. In this embodiment, the high-pressure cleaning is performed in a spot shape, and the ultrasonic cleaning line L is also set to be narrower than the width of the substrate 1. Therefore, in order to clean the entire surface of the substrate 1, the substrate 1 is rotated in a horizontal plane while swinging the nozzles 10 and 20 for cleaning along a horizontal locus on the substrate 1. This swing is indicated by the symbol B in FIG.
This rotation B is executed between the trajectories PT drawn by the four corners of the substrate 1 by the rotation of and the vicinity of the rotation center CP. FIG. 5 shows a part of each of the three swing trajectories C, C1, and C2. The center swing trajectory C is a trajectory drawn by the high-pressure washing spot P by the swing. In addition, another swing locus C
1, C2 are both ends E1, E2 of the ultrasonic cleaning line L, respectively.
Is the locus drawn. Since the ends E1 and E2 of the high-pressure cleaning spot P and the ultrasonic cleaning line L are different from each other with respect to the center of rotation of the arm 52 (the column 51 in FIG. 1), these three swing trajectories C, C1 and C2 have different radii. Having. In this embodiment, the swing locus C of the high-pressure cleaning spot P is set so as to pass right above the rotation center CP of the substrate 1. By doing so, all parts of the surface of the substrate 1 are subjected to high-pressure cleaning.

On the other hand, both ends E1, E2 of the ultrasonic cleaning line L
Does not pass right above the rotation center CP, but there is no problem due to this. That is, since the ultrasonic cleaning is performed in the form of a line, the section between the two oscillation trajectories C1 and C2 is scanned by the ultrasonic cleaning line L, and the two oscillation trajectories C1 and C2 are scanned. This is because, if the rotation center CP is inserted between them, it is ensured that each part of the substrate 1 is subjected to ultrasonic cleaning.

<Relationship between Oscillation Scan and Complex Cleaning> By setting such a positional relationship and oscillation scan, and performing combined cleaning of ultrasonic cleaning and high-pressure cleaning on the substrate 1, the following is performed. Scanning cleaning is performed.

First, an arbitrary position on the surface of the substrate 1 is denoted by A as shown in FIG. When the cleaning nozzles 10 and 20 are at the positions indicated by the solid lines in FIG. 6, this position A is not substantially subjected to the cleaning operation.

When the cleaning nozzles 10 and 20 swing along the swing locus B, the position A first crosses the ultrasonic cleaning line L while rotating with the rotation of the substrate 1. Therefore, at this time, the position A receives only the ultrasonic cleaning.

Further, when each of the cleaning nozzles 10 and 20 swings and moves to the position indicated by the imaginary line in FIG. 6, the position A on the substrate 1 crosses the high-pressure cleaning spot P, and immediately thereafter, the ultrasonic cleaning line L Cross. At this time, combined cleaning of high-pressure cleaning and ultrasonic cleaning is performed for the position A.

Thereafter, when the cleaning nozzles 10 and 20 further swing, the position A deviates from both the cleaning spot P and the ultrasonic cleaning line L. The swing of each of the cleaning nozzles 10 and 20 may be performed only once in one direction. However, in this embodiment, the reciprocating swing is repeated. In this case, the return swing and the subsequent swing are repeatedly combined. It will undergo cleaning and ultrasonic cleaning.

As described above, the entire surface of the substrate 1 is subjected to the complex cleaning. In this embodiment, when attention is paid to an arbitrary position A, there is a period during which not only the combined cleaning but also the ultrasonic cleaning is performed, but there is no problem due to this. That is, since the ultrasonic cleaning is excellent in liquid replacement property, even if there is a period for performing the cleaning alone, there is no problem such as reattachment of the removed foreign matter. Rather,
If the foreign matter that can be removed only by ultrasonic cleaning is removed only by ultrasonic cleaning, it is possible to intensively expose only the foreign matter that needs high pressure cleaning to the high pressure cleaning jet J,
The cleaning effect is further enhanced.

When the above-described swing scanning is performed, the high-pressure cleaning jet J moves in the ultrasonic cleaning liquid after being discharged, and cavitation due to bubbling inside the cleaning liquid supplied to the substrate surface. The effect is produced, and the cleaning ability is further enhanced.

<Advantage of High Pressure Wash Spot Utilization> Next, in FIG.
The reason why the end points E1 and E2 are set so as to be biased toward the end point E1 farther from the rotation center CP of the substrate 1 will be described. FIG. 7 is a conceptual diagram of the oscillating scanning in the case of the configuration of FIG. 3, and FIG. 8 conversely places the high-pressure cleaning spot P at the rotation center CP of the substrate 1 among the two end points E1 and E2 of the ultrasonic cleaning line L. It is a conceptual diagram in the case where it is biased toward the near end point E2. In any case, the rotation of the substrate 1
Is swung between the locus PT drawn by the four corners and the vicinity of the rotation center CP.

In the case of FIG. 7, the ultrasonic cleaning nozzle 10 discharges the ultrasonic cleaning liquid toward the substrate surface in a state (a) where the high-pressure cleaning spot P coincides with the locus PT. Also,
The state where the high pressure washing spot P coincides with the rotation center CP (b)
However, the ultrasonic cleaning nozzle 10 discharges the ultrasonic cleaning liquid toward the substrate surface. Therefore, the ultrasonic cleaning liquid is not wasted in the entire range of the swing amplitude θB.

On the other hand, in the case of FIG.
In the state (a) corresponding to the locus PT, most of the cleaning liquid discharged from the ultrasonic cleaning nozzle 10 is only discharged to the outside of the locus PT, and the ultrasonic cleaning liquid is wasted. .

Thus, the arrangement according to the embodiment of FIG. 3 has the advantage that there is no waste of cleaning liquid. Conversely, when the same amount of the cleaning liquid is used, the cleaning effect is enhanced.

<Other Embodiments> The present invention is not limited to the above-described embodiments, but can be implemented in various forms including the following examples.

FIG. 9 shows two high pressure washing nozzles 20A and 20A.
B is an embodiment in which B is additionally provided. In this case, one high-pressure cleaning nozzle 20A is set such that the cleaning spot PA is near the end point E1 of the ultrasonic cleaning line L, and the other high-pressure cleaning nozzle 20B is configured so that the cleaning spot PB is in the ultrasonic ultrasonic cleaning line. It is set to be near the center of L. In this case, it is sufficient if the swing angle θBC is set in a range until the cleaning spot PB reaches the rotation center CP. However, by further increasing the swing angle, one swing over the entire area of the substrate is performed. It is also possible to receive high-pressure washing twice (one way).

FIG. 10 shows an example in which the ultrasonic cleaning nozzle and the high-pressure cleaning nozzle are separated. The ultrasonic cleaning nozzle 10 has a length equal to or more than half the diagonal width of the substrate 1 and does not swing. Ultrasonic cleaning nozzle 10
Can be evacuated like an imaginary line, but this is an evacuation for loading / unloading of the substrate 1. on the other hand,
The high-pressure cleaning nozzle 20 is supported by an arm 72, and the arm 72 is
It can be translated in any direction. In this apparatus, the ultrasonic cleaning liquid is discharged in a curtain shape while rotating the substrate 1, and
The surface of the substrate 1 is cleaned and scanned by the high-pressure cleaning nozzle 20 moving linearly. By integrating the ultrasonic cleaning nozzle 10 and the high-pressure cleaning nozzle 20 as shown in FIG. 1, the space utilization is enhanced. However, the present invention can be implemented even with a separation type as shown in FIG.

FIG. 11 shows an example in which a high-pressure cleaning nozzle 20a having a large number of high-pressure cleaning liquid jet holes JH arranged one-dimensionally is used. Although the position of the high-pressure cleaning spot is not shown in FIG. 11, it is set in the vicinity of the ultrasonic cleaning line L on the side which is scanned first with respect to the rotation of the substrate as in the embodiment of FIG. is there. In this case, a large number of high pressure cleaning liquid jet holes J
It is preferable that one of the high-pressure washing spots of H coincides with the rotation center CP. In the case of this arrangement, by narrowing the interval between the ejection holes JH, the swing width of the high-pressure cleaning nozzle 10a can be made very small,
Alternatively, the swing can be omitted. The retraction of each nozzle can be performed by turning as shown by the symbol θ11.

FIG. 12 shows a case where the ultrasonic cleaning nozzle 10 has a length covering the whole area of the substrate, and the high-pressure cleaning nozzle array 20a, 2
0b is disposed on both sides of the ultrasonic cleaning nozzle 10. Also in this case, the high-pressure cleaning nozzle arrays 20a and 20b are provided on the side to be scanned first in the rotation of the substrate, and the high-pressure cleaning spots in one of the ejection holes JH constituting these are arranged so as to coincide with the rotation center CP. Is preferred. In addition, in the case of this arrangement, the escaping of the nozzles can be performed by translation as shown by a symbol T12.

<Modification> Although high-pressure cleaning is preferably performed in the form of a beam as in the above embodiments, it can be performed in the form of a curtain using slits.

The present invention can be used for cleaning various substrates mainly for substrates for electronic devices such as semiconductor wafers in addition to glass substrates for liquid crystal display devices.

[0078]

EXAMPLES Table 1 shows the results of confirming the cleaning effect of the apparatus of the embodiment shown in FIG. In Table 1, two cases of only high-pressure jet cleaning and only ultrasonic cleaning are shown as comparison targets. The experimental conditions are as follows.

Type of substrate 1: glass substrate for liquid crystal display having a chromium film formed on the surface; plane size of substrate 1: 360 mm × 465 mm; number of rotations of substrate 1: 500 rpm; size of jet discharge hole of high pressure cleaning nozzle 20 … 0.1mm
φ: Jet pressure supplied to the high-pressure washing nozzle 20 ... 15 kgf / c
m ² ; ultrasonic power in the ultrasonic cleaning nozzle 10 ... 110
W: Cleaning time: 10 seconds; Measurement method: Counting the number of particles having a size of 1 μm or more before and after cleaning

[0080]

[Table 1]

As can be seen from Table 1, the combination of the high-pressure jet and the ultrasonic wave in the embodiment of the present invention
It can be seen that the effect of removing particles is improved as compared with the case of each of these alone.

The difference is that the removal rate is 0.2% to 1.
Although it is about 2%, even a slight difference in the number of residual particles in a glass substrate for a liquid crystal display device or the like greatly affects the yield of the substrate after cleaning. For this reason, it can be seen that the embodiment of the present invention gives excellent results as compared with each cleaning method alone.

[0083]

As described in the foregoing, according to the invention of the first to 1 4, by performing a composite washing with ultrasonic cleaning and high pressure cleaning, and the foreign matter removal capacity is an advantage of the respective cleaning system The foreign matter discharging ability acts synergistically, and the cleaning ability of the substrate is improved.

In particular, since the foreign matter removed by the high-pressure cleaning is quickly discharged by the abundant ultrasonic cleaning liquid, the cleaning ability is further enhanced as compared with a case where these cleaning methods are individually performed by another apparatus.

In the combined cleaning of the present invention, a non-contact type cleaning system is combined, and a sufficient cleaning ability is realized by a synergistic effect thereof. Therefore, it is not necessary to excessively increase the pressure of high pressure cleaning. Therefore, no damage such as a scratch is given to the substrate, and no uneven cleaning occurs.

In particular, by oscillating high-pressure cleaning as in the fourth and tenth aspects of the present invention, a cavitation effect due to bubbling is generated inside the cleaning liquid supplied to the substrate surface, and the cleaning performance is further improved. it can.

Further, as in the fifth and eleventh inventions,
By arranging the high-pressure cleaning spot in front of the ultrasonic cleaning line in the rotary cleaning of the substrate, the amount of the ultrasonic cleaning liquid at the high-pressure cleaning position can be made appropriate, and the ultrasonic cleaning liquid layer can be formed. The high-pressure cleaning is efficiently performed via.

Further, as in the sixth and twelfth aspects, the high-pressure liquid cleaning spot is set so as to be biased toward the end point farthest from the rotation center of the substrate among the end points of the ultrasonic cleaning line. Accordingly, cleaning can be performed without wasting the cleaning liquid.

[Brief description of the drawings]

FIG. 1 is a perspective view of a main part of a substrate cleaning apparatus according to an embodiment of the present invention.

FIG. 2 is a diagram showing details of an ultrasonic cleaning nozzle 10;

FIG. 3 is an enlarged view of a positional relationship between the nozzles 10 and 20 viewed from a direction orthogonal to a longitudinal direction of the ultrasonic cleaning nozzle 10.

FIG. 4 is a diagram showing a positional relationship between the nozzles 10 and 20 viewed from above in a transparent manner.

FIG. 5 is an explanatory diagram of swing scanning in the embodiment.

FIG. 6 is an explanatory diagram of swing scanning in the embodiment.

FIG. 7 is an explanatory diagram of swing scanning in the embodiment.

FIG. 8 is an explanatory diagram of swing scanning in a comparative example.

FIG. 9 is a diagram showing an example in which a plurality of high-pressure cleaning nozzles are provided.

FIG. 10 is a diagram illustrating an example in which an ultrasonic cleaning nozzle and a high-pressure cleaning nozzle are separately provided.

FIG. 11 is a diagram showing an example in which a high-pressure washing nozzle having a porous arrangement is used.

FIG. 12 is a view showing another example using a high-pressure washing nozzle having a porous arrangement.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Substrate 10 Ultrasonic cleaning nozzle 20 High-pressure cleaning nozzle 50 Composite cleaning mechanism 100 Substrate cleaning device L Ultrasonic cleaning line P High-pressure cleaning spot CP Substrate rotation center CT Rotation locus of substrate corner F Ultrasonic cleaning liquid J High-pressure cleaning jet

Continued on the front page (72) Inventor Kenya Morinishi 1 at 480 Takamiya-cho, Hikone-shi, Shiga Prefecture Dainippon Screen Manufacturing Co., Ltd. Hikone District Office (72) Inventor Masahiro Miyagi 480 Takamiya-cho, Hikone-shi, Shiga 1 Dainippon Screen Manufacturing Co., Ltd. in the Hikone Plant (72) Inventor Naoshige Itami 1015 Uedanaka, Nakahara-ku, Kawasaki City, Kanagawa Prefecture Inside Fujitsu Limited (72) Inventor Kazuhiro Watanabe, Nakahara-ku, Kawasaki City, Kanagawa Prefecture 1015 Odanaka Fujitsu Limited (56) References JP-A-1-151975 (JP, A) JP-A-3-224670 (JP, A) JP-A-1-105376 (JP, A) (58) Field (Int.Cl. ⁷ , DB name) H01L 21/304 B08B 3/02 B08B 3/12

Claims (14)

(57) [Claims] 1. An apparatus for cleaning a substrate, comprising: (a) ultrasonic cleaning means for emitting ultrasonic waves to the liquid while discharging the liquid toward the substrate to perform ultrasonic cleaning of the substrate; (b) provided at a different position from the ultrasonic cleaning means,
High-pressure cleaning means for performing high-pressure cleaning of the substrate by ejecting high-pressure liquid toward a range in which the liquid on which the ultrasonic waves are emitted is present on the substrate; and wherein the high-pressure cleaning means includes the ultrasonic cleaning. Discharged from the means
To reach the surface to be cleaned of the substrate and
The height is raised toward the ultrasonic cleaning solution flowing out along the cleaning surface.
A substrate cleaning apparatus, wherein a combined cleaning of the ultrasonic cleaning and the high-pressure cleaning is performed on the substrate so as to eject a pressurized liquid . 2. The substrate cleaning apparatus according to claim 1, further comprising: (c) substrate rotating means for rotating the substrate in a predetermined direction, wherein the composite cleaning is performed while rotating the substrate. Substrate cleaning equipment. 3. The substrate cleaning apparatus according to claim 2, wherein the ultrasonic cleaning means (a-1) emits ultrasonic waves toward an ultrasonic cleaning line defined on a surface to be cleaned of the substrate. And an ultrasonic cleaning nozzle for discharging the liquid from a slit, wherein the high-pressure cleaning means (b-1) ejects the high-pressure liquid toward a high-pressure cleaning spot defined on a surface to be cleaned of the substrate. A substrate cleaning apparatus, comprising: 4. The substrate cleaning apparatus according to claim 3, wherein: (d) swinging the high-pressure cleaning nozzle along a locus passing above a center of rotation of the substrate and substantially parallel to a surface of the substrate. A high-pressure cleaning nozzle oscillating means for moving the substrate. 5. An apparatus for cleaning a substrate , comprising: (a) discharging a liquid toward the substrate while applying ultrasonic waves to the liquid;
Ultrasonic cleaning means for performing ultrasonic cleaning of the substrate by firing
And (b) provided at a different position from the ultrasonic cleaning means,
The range in which the liquid from which the ultrasonic waves are emitted exists on the substrate
A high-pressure liquid is jetted toward the enclosure to perform high-pressure cleaning of the substrate.
Cormorants and high pressure cleaning means, (c) substrate rotating means for rotating said substrate in a predetermined direction
If, (d) passes above the rotating center of the substrate, and the substrate
High pressure washing nozzle along a trajectory substantially parallel to the plane of
A high-pressure cleaning nozzle oscillating means for oscillating the substrate , wherein the ultrasonic cleaning means comprises: (a-1) ultrasonic cleaning defined on a surface to be cleaned of the substrate.
Slurry the liquid from which ultrasonic waves were emitted toward the line.
An ultrasonic cleaning nozzle that discharges from a cartridge, wherein the high-pressure cleaning means comprises: (b-1) a high-pressure cleaning nozzle defined on a surface to be cleaned of the substrate.
A high-pressure washing nozzle for jetting the high-pressure liquid toward the pot
A nozzle and rotating the substrate while rotating the substrate,
A position where the combined cleaning of the wave cleaning and the high-pressure cleaning is performed, and the high-pressure cleaning spot scans the substrate near the ultrasonic cleaning line and before the ultrasonic cleaning line in the rotation of the substrate. A substrate cleaning apparatus characterized by being set to: 6. The substrate cleaning apparatus according to claim 5, wherein the high-pressure liquid cleaning spot is biased toward an end point of the ultrasonic cleaning line that is farther from the rotation center of the substrate. A substrate cleaning apparatus, comprising: 7. A method for cleaning a substrate, comprising: ultrasonic cleaning in which a liquid to which ultrasonic waves are emitted is discharged toward the substrate; and ultrasonic cleaning in which a liquid in which ultrasonic waves are emitted is present on the substrate. And high-pressure cleaning, which ejects high-pressure liquid, from the ultrasonic cleaning means to reach the surface to be cleaned of the substrate.
The superfluid that has reached and has flowed along the surface to be cleaned from its arrival point
As jetting the high-pressure liquid toward the sonic cleaning liquid,
A method for cleaning a substrate, wherein the method is performed in the same apparatus in parallel with time. 8. The method for cleaning a substrate according to claim 7, wherein a scan of a combined cleaning of the ultrasonic cleaning and the high-pressure cleaning is performed on the substrate while rotating the substrate in a predetermined direction. Substrate cleaning method. 9. The substrate cleaning method according to claim 8, wherein the ultrasonic cleaning is performed by applying the ultrasonic waves to the ultrasonic cleaning line defined on the surface to be cleaned of the substrate. The high-pressure cleaning is performed by discharging the high-pressure liquid from a high-pressure cleaning nozzle toward a high-pressure cleaning spot defined on a surface to be cleaned of the substrate. Substrate cleaning method. 10. The method for cleaning a substrate according to claim 9, wherein the high-pressure cleaning nozzle is swung along a locus substantially above the center of rotation of the substrate and substantially parallel to a surface of the substrate. A substrate cleaning method, wherein the high-pressure cleaning is performed. 11. When cleaning a substrate, the substrate is rotated in a predetermined direction while an ultrasonic cleaning line defined on a surface to be cleaned of the substrate is provided.
The ultrasonic cleaning nozzle
Ultrasonic cleaning discharged from the substrate, and a range in which the liquid from which ultrasonic waves are emitted exists on the substrate.
A high pressure cleaning spot defined on the surface to be cleaned of the substrate
The high-pressure liquid from the high-pressure cleaning nozzle
And high-pressure cleaning to be performed in parallel in time in the same apparatus, and the high-pressure cleaning spot is located near the ultrasonic cleaning line and earlier than the ultrasonic cleaning line in the rotation of the substrate. It is set to the position for scanning the substrate, the group
Passing above the center of rotation of the plate and substantially in the plane of the substrate
Swinging the high-pressure washing nozzle along a locus parallel to
A high-pressure cleaning step . 12. The substrate cleaning method according to claim 11, wherein the high-pressure liquid cleaning spot is biased toward an end point of the ultrasonic cleaning line that is farther from the center of rotation of the substrate. A method for cleaning a substrate, comprising: 13. The substrate cleaning apparatus according to claim 1, wherein the pressure of the high-pressure liquid is 5 kg / cm ^{2 to} 15 kg / c.
A substrate cleaning apparatus characterized by being within the range of m ² . 14. The method according to claim 7, wherein the pressure of the high-pressure liquid is 5 kg / cm ^{2 to} 15 kg / c.
substrate cleaning method characterized by in the range of m ^2.