JP3321929B2 - Electronic components - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electronic component such as a multilayer ceramic capacitor.

[0002]

2. Description of the Related Art In a conventional monolithic ceramic capacitor of this kind, BaTiO ₃ -N
b ₂ O ₅ -MnO ₂ system and the like have been used.

[0003]

When a monolithic ceramic capacitor is manufactured using the dielectric material having the above-mentioned conventional structure, a plate-like or needle-like secondary phase is precipitated on the dielectric surface. In addition, there is a problem that the discontinuity of the internal electrode occurs and the capacitance of the capacitor varies.

Further, when this capacitor is mounted, there is a problem that the stability is poor due to the unevenness of the surface due to the secondary phase, and the displacement is likely to occur.

Accordingly, the present invention provides an electronic component which suppresses the generation of the above-mentioned plate-like or needle-like secondary phase, has a high relative dielectric constant, a small dielectric loss, and a small temperature change of the dielectric constant. It is intended to do so.

[0006]

In order to achieve this object, an electronic component according to the present invention is characterized in that its dielectric is made of xBaO + y
TiO ₂ + zDyO _3/2 (where x, y, and z indicate molar ratios)
X + y + z = 1) , the component represented by a pentagonal region having vertices a, b, c, d, and e shown in Table 5 as a main component, and a subcomponent 0.6 to 2.4 parts by weight in terms of Nb converted to Nb ₂ O ₅ and Ni as Ni
0.05 to 0.8 parts by weight in terms of O, Mn is MnO ₂
It contains at least one of 0.01 to 0.4 parts by weight in terms of.

[0007]

[Table 5]

[0008]

According to this structure, since Ba / Ti is larger than 1, generation of a secondary phase due to excessive Ti can be extremely suppressed. Further, the relative dielectric constant at room temperature is about 20.
It shows a high value of 00 to 4300, and the dielectric loss (ta
nδ) shows a small value of 1.0% or less. Further, the temperature change rate of the dielectric constant is based on 20 ° C., and the JIS-C-
It satisfies the JD characteristics specified in 5130 and above .

[0009]

【Example】

(Embodiment 1) FIG. 5 is a manufacturing process diagram for manufacturing an electronic component of the present invention. FIG. 6 is a perspective view of an electronic component according to an embodiment of the present invention.

First, Ba / Ti is used as a starting material for the dielectric.
High purity BaTiO ₃ powder whose molar ratio is adjusted to 1, and BaCO ₃ , Dy ₂ O ₃ , MnO ₂ , NiO, Nb ₂ O ₅
Were prepared and weighed so that the composition after firing was as shown in (Table 6).

[0011]

[Table 6]

Then, it was put into a rubber-lined ball mill equipped with an agate ball together with pure water, wet-mixed for 18 hours, dehydrated and dried.

After that, a proper amount of a 5 wt% solution of polyvinyl alcohol was added as a binder to the dried powder, and the mixture was homogenized, sized through a 32 mesh sieve, and formed with a mold and a hydraulic press at a molding pressure of 1.5 ton / cm. As shown in FIG. 6, a disk having a diameter of 16 mm and a thickness of 0.6 to 0.8 mm was formed.

Next, this compact is placed in an alumina sheath covered with zirconia powder, and is placed in air in the range of 1250 to 1
It was baked while being kept at 350 ° C. for 2 hours. The temperature at which the density of the dielectric 1 is maximum is determined as the optimum firing temperature, and the obtained dielectric 1
A silver electrode 2 was applied to the entire upper and lower surfaces of the substrate and baked to obtain an electronic component.

The dielectric constant, dielectric loss, and capacitance of the electronic component manufactured as described above were measured at a frequency of 1 kHz and a room temperature of 20 ° C.

The temperature change rate of the capacity was determined at -25 ° C. and 85 ° C. based on the capacity at 20 ° C. The results are shown in (Table 7).

[0017]

[Table 7]

Sample Nos. 1, 4 and 7 are JIS-C-513.
The JD characteristics in the 0 standard are satisfied, and the other samples are JIS-
The C-5130 standard satisfies the DR characteristic with a smaller capacitance temperature change. In Table 7, the sample No.
For 1, 4 and 7, the maximum capacity change rate at the Curie temperature is shown as (ΔC / ΔC ₂₀ ) _max (%), and for other samples, the absolute value of the maximum capacity change rate in the range of −55 ° C. to 125 ° C. The value is shown as | ΔC / ΔC ₂₀ | _max (%).

It can be seen from Table 7 that the electronic component of this embodiment has a very high relative dielectric constant of about 2100 to 4500 and a very high dielectric loss of 1.0% or less.

Next, the reason for determining the composition of the dielectric of the present embodiment will be described with reference to FIG. Above the straight line ae, the rate of change in capacitance is large, and the JD characteristics in JIS-C-5130 cannot be satisfied. On the left side of the straight lines ab and bc, sintering becomes difficult, which is not practical. Straight line c
Below -d, the effect of adding Nd is small, the dielectric constant is reduced, and the sinterability is poor. On the right side of the straight line de, the dielectric 1
This is not practical because a secondary phase is remarkably generated on the surface and the dielectric constant tends to decrease.

In addition, Nb-Ni, Nb-Mn or N
In the combination of b-Mn-Ni, Nb ₂ O ₅ is 0.6
If it is less than wt%, the sinterability deteriorates, and the dielectric loss increases. If it exceeds 2.4 wt%, the dielectric constant is lowered and it is not practical. If the content of MnO ₂ is less than 0.01 wt%, there is no effect of adding it, and if it exceeds 0.4 wt%, the dielectric constant is lowered and the rate of change in capacitance with temperature is increased, so that it is not practical.
Furthermore, when NiO exceeds 0.8 wt%, the dielectric constant decreases and the capacity change rate increases.
If it is less than 5 wt%, the effect of the addition is not obtained, and it is not practical. However, in the combination of Nb-Ni-Mn, Ni
When both Ni and Mn are added at the same time, when the total of Ni and MnO ₂ exceeds 0.8 wt%, the dielectric constant is lowered and the rate of change in capacitance is increased, which is not practical.

For the reasons described above, the composition of the dielectric 1 of this embodiment was determined. In this embodiment, the dielectric 1
Although oxides such as Nb ₂ O ₅ , MnO ₂ and Dy ₂ O ₃ were used as starting materials for the above, carbonates, hydroxides and the like may be used if the composition after firing becomes a desired one. Similar characteristics can be obtained.

After the main component is calcined in advance,
Even if the auxiliary component is added, the effect does not change.

Example 2 As a starting material for the dielectric 1,
High purity BaTi with Ba / Ti molar ratio adjusted to 1
O ₃ powder and BaCO ₃ , CeO ₂ , MnO ₂ , NiO, Nb
Each powder of ₂ O ₅ was weighed so that the composition after firing was as shown in (Table 8).

[0025]

[Table 8]

Then, an electronic part shown in FIG. 6 was manufactured in the same manner as in Example 1, and the frequency was 1 kHz and the room temperature was 20 ° C.
The dielectric constant, dielectric loss, and capacitance were measured. The capacity change rate was also determined at −25 ° C. and 85 ° C. based on the capacity at 20 ° C. The results are shown in (Table 9).

[0027]

[Table 9]

Sample Nos. 1, 4, 5, and 7 are JIS-C-5
Satisfies JD characteristics in 130 standard, other samples are JI
In the SC-5130 standard, a DR characteristic with a smaller rate of change in capacitance with temperature is satisfied. And sample No.1,4
For 5 and 7, the maximum capacity change rate at the Curie temperature is shown as (ΔC / C ₂₀ ) _max (%), and for other samples, the absolute value of the maximum capacity change rate in the range of −55 ° C. to 125 ° C. | It is shown as ΔC / C ₂₀ | _max (%).

Referring to (Table 9), the electronic component in this embodiment has a very high relative dielectric constant of about 2100 to 4600 and a very high dielectric loss (tan δ) of 1.1% or less. I understand.

Next, the reason for determining the composition of the dielectric 1 in this embodiment will be described with reference to FIG. Above the straight line ae, the rate of change in capacitance is large, and the JD characteristics in JIS-C-5130 cannot be satisfied. On the left side of the straight lines ab and bc, sintering becomes difficult, which is not practical. Below the line cd, the effect of adding Nd is small, the dielectric constant is lowered, and the sinterability is also poor. On the right side of the straight line de, generation of a secondary phase is remarkable on the surface of the sintered body, and the dielectric constant tends to decrease, which is not practical.

In the combination of Nb—Ni, Nb—Mn, or Nb—Mn—Ni, Nb ₂ O ₅ is 0.1%.
If it is less than 6 wt%, the sinterability deteriorates, and the dielectric loss increases. If it exceeds 2.4 wt%, the dielectric constant decreases, which is not practical. MnO ₂ has no effect when it is less than 0.01 wt%, and when it exceeds 0.4 wt%, the dielectric constant is lowered and the rate of change in capacity with temperature is increased, so that it is not practical. Further, when NiO exceeds 0.8 wt%, the dielectric constant decreases and the capacity change rate increases.
If it is less than 05 wt%, there is no effect of the addition, and it is not practical. However, in the combination of Nb-Ni-Mn, Ni
And Mn are added simultaneously, the sum of Ni and Mn is
If it exceeds 0.8 wt%, the dielectric constant is lowered and the rate of change in capacitance is increased, so that it is not practical.

For the reasons described above, the composition of the dielectric 1 in this embodiment was determined. In this embodiment, Nb ₂ O ₅ , MnO ₂ , and Ce are used as starting materials for the dielectric 1.
Although oxides such as O ₂ were used, similar properties can be obtained by using carbonates, hydroxides, and the like, as in Example 1, provided that the composition after firing becomes a desired composition. .

Further, even if the main component is calcined in advance and then the subcomponent is added, the effect remains unchanged.

Example 3 First, as a starting material of the dielectric 1, high-purity Ba whose molar ratio of Ba / Ti was adjusted to 1 was used.
TiO ₃ powder, BaCO ₃ , Nd ₂ O ₃ , MnO ₂ , Ni
Each powder of O and Nb ₂ O ₅ was weighed so as to have a composition shown in (Table 10).

[0035]

[Table 10]

Then, the electronic component shown in FIG. 6 was manufactured in the same manner as in Example 1, and the dielectric constant, the dielectric loss, and the capacitance were measured at a frequency of 1 kHz and a room temperature of 20 ° C. Then, the capacity change rate was determined at −25 ° C. and 85 ° C. based on the capacity at 20 ° C. The results are shown in (Table 11).

[0037]

[Table 11]

Sample Nos. 1, 4 and 7 are JIS-C-513.
The other sample satisfies the JD characteristic in the JIS-C-5130 standard, and the other sample satisfies the DR characteristic in the JIS-C-5130 standard having a smaller capacity temperature change rate.

In Table 11, samples Nos. 1, 4,
7 is the maximum capacity change rate at the Curie temperature (ΔC / C ₂₀ )
_max (%), -55 for other samples
° C. to 125 of the maximum rate of change of capacity at the range of ° C. The absolute value | shown as _{max (%) | ΔC / C} 20.

It can be seen from Table 11 that the electronic component of this example has a high relative dielectric constant of about 2100 to 4900 and an excellent dielectric loss of 1.1% or less.

Next, the reason for determining the composition of the dielectric 1 in this embodiment will be described with reference to FIG. Above the straight line ae, the rate of change in capacitance becomes large and JIS-C-5130
The JD characteristics in the standard cannot be satisfied. Straight lines ab, bc
On the left side, sintering becomes difficult and is not practical. Below the line cd, the effect of adding Nd is small, the dielectric constant is lowered, and the sinterability is also poor. On the right side of the straight line de, generation of a secondary phase is remarkable on the surface of the sintered body, and the dielectric constant tends to decrease, which is not practical.

In a combination of Nb-Ni, Nb-Mn or Nb-Mn-Ni, Nb ₂ O ₅ is 0.1%.
If it is less than 6 wt%, the sinterability deteriorates, and the dielectric loss increases. If it exceeds 2.4 wt%, the dielectric constant decreases, which is not practical. MnO ₂ has no effect when it is less than 0.01 wt%, and when it exceeds 0.4 wt%, the dielectric constant is lowered and the rate of change in capacity with temperature is increased, so that it is not practical. Further, when NiO exceeds 0.8 wt%, the dielectric constant decreases and the capacity change rate increases.
If it is less than 05 wt%, there is no effect of the addition, and it is not practical. However, in the combination of Nb-Ni-Mn, Ni
And Mn are added simultaneously, the sum of Ni and Mn is
If it exceeds 0.8 wt%, the dielectric constant is lowered and the rate of change in capacitance is increased, so that it is not practical.

For the reasons described above, the composition of the dielectric 1 in this embodiment was determined. In this embodiment, Nb ₂ O ₅ , MnO ₂ , Nd ₂
Although oxides such as O ₃ were used, similar properties can be obtained by using carbonates, hydroxides, and the like, as in Example 1, provided that the composition after firing becomes a desired composition.

After calcining the main component in advance,
Even if the auxiliary component is added, the effect does not change.

Example 4 First, as a starting material of the dielectric 1, high-purity Ba whose molar ratio of Ba / Ti was adjusted to 1 was used.
TiO ₃ powder, BaCO ₃ , Sm ₂ O ₃ , MnO ₂ , Ni
Each powder of O and Nb ₂ O ₅ was weighed so that the composition after firing became (Table 12).

[0046]

[Table 12]

Then, the electronic component shown in FIG. 6 was manufactured in the same manner as in Example 1, and the dielectric constant, the dielectric loss, and the capacitance were measured at a frequency of 1 kHz and a room temperature of 20 ° C. Then, the capacity change rate was determined at −25 ° C. and 85 ° C. based on the capacity at 20 ° C. The results are shown in (Table 13).

[0048]

[Table 13]

Sample Nos. 1, 4, 5, and 7 are JIS-C-5
The other samples satisfy the JD characteristics in the 130 standard, and the other samples satisfy the RD characteristics in which the rate of change in capacitance with temperature is smaller in the JIS-C-5130 standard.

For Sample Nos. 1, 4, 5, and 7, the maximum capacity change rate at the Curie temperature was (ΔC / C ₂₀ ).
_max (%), for other samples from -55 ° C
The absolute value of the maximum capacity change rate in the range of 125 ° C. is | Δ
C / C ₂₀ | _max (%).

As can be seen from Table 13, the electronic component of this example has a large relative dielectric constant of about 2200 to 4800 and an excellent dielectric loss of 1.1% or less.

Next, the reason for determining the composition of the dielectric 1 in this embodiment will be described with reference to FIG. Above the straight line ae, the rate of change in capacitance becomes large and JIS-C-5130
The JD characteristics in the standard cannot be satisfied. Straight lines ab, bc
On the left side, sintering becomes difficult and is not practical. Below the line cd, the effect of adding Nd is small, the dielectric constant is lowered, and the sinterability is also poor. On the right side of the straight line de, generation of a secondary phase is remarkable on the surface of the sintered body, and the dielectric constant tends to decrease, which is not practical.

In a combination of Nb-Ni, Nb-Mn or Nb-Mn-Ni, Nb ₂ O ₅ is 0.1%.
If it is less than 6 wt%, the sinterability deteriorates, and the dielectric loss increases. If it exceeds 2.4 wt%, the dielectric constant decreases, which is not practical. If the content of MnO ₂ is less than 0.01% by weight, there is no effect of addition, and if it exceeds 0.4% by weight, the dielectric constant is lowered and the rate of change in capacity with temperature is increased, so that it is not practical. Further, when NiO exceeds 0.8 wt%, the dielectric constant decreases, and the capacitance change rate increases.
If it is less than 0.05% by weight, the effect of the addition is not obtained, and it is not practical. However, when both Ni and Mn are simultaneously added in the combination of Nb—Ni—Mn, the dielectric constant decreases and the capacity change rate increases when the total of Ni and Mn exceeds 0.8 wt%, which is practical. Not.

For the reasons described above, the composition of the dielectric 1 in this embodiment was determined. In this embodiment, Nb ₂ O ₅ , MnO ₂ , Sm ₂
Although oxides such as O ₃ were used, similar properties can be obtained by using carbonates, hydroxides, and the like, as in Example 1, provided that the composition after firing becomes a desired composition.

After the main component is calcined in advance,
Even if the auxiliary component is added, the effect does not change.

Example 5 First, as a starting material for the dielectric 1, a high-purity BaT whose Ba / Ti molar ratio was adjusted to 1 was used.
iO ₃ powder and BaCO ₃ , Dy ₂ O ₃ , MnO ₂ , ZnO,
Each powder of Nb ₂ O ₅ was weighed so that the composition after firing was as shown in (Table 14).

[0057]

[Table 14]

Then, an electronic component as shown in FIG. 6 was manufactured in the same manner as in Example 1, and the dielectric constant, dielectric loss (tan δ), and capacitance were measured at a frequency of 1 kHz and room temperature of 20 ° C. And the capacity change rate is based on the capacity at 20 ° C.
It was determined for -25 ° C and 85 ° C. The results are shown in Table 1.
It is shown in 5).

[0059]

[Table 15]

Samples Nos. 1, 4, and 6 are JIS-C-513.
JD characteristics in standard 0, other samples are JI
In the SC-5130 standard, the RD characteristic with a smaller capacitance temperature change rate is satisfied.

For samples Nos. 1, 4 and 6, the maximum capacity change rate at the Curie temperature was (ΔC / C ₂₀ ).
_max (%), for other samples from -55 ° C
The absolute value of the maximum capacity change rate in the range of 125 ° C. is | Δ
C / C ₂₀ | _max (%).

It can be seen from Table 15 that the electronic component of this example has a large relative dielectric constant of about 2300 to 5100 and an excellent dielectric loss of 1.0% or less.

Next, the reason for determining the composition of the dielectric 1 in this embodiment will be described with reference to FIG. Above the straight line ae, the rate of change in capacitance becomes large and JIS-C-5130
The JD characteristics in the standard cannot be satisfied. Straight lines ab, bc
On the left side, sintering becomes difficult and is not practical. Below the line cd, the effect of adding Nd is small, the dielectric constant is lowered, and the sinterability is also poor. On the right side of the straight line de, generation of a secondary phase is remarkable on the surface of the sintered body, and the dielectric constant tends to decrease, which is not practical.

When Nb—Zn or Nb—Zn—Mn is used as a subcomponent and Nb ₂ O ₅ is less than 0.6% by weight, sinterability deteriorates and dielectric loss increases. If it exceeds 2.4% by weight, the dielectric constant decreases, and it is not practical. If ZnO is less than 0.05% by weight, there is no effect of addition, and if it exceeds 0.80% by weight, the dielectric constant is lowered and the rate of change in capacitance with temperature is increased, so that it is not practical. Further, when both ZnO and MnO ₂ are added, the addition effect can be obtained if the total addition amount is 0.05 wt% or more, but if the total addition exceeds 0.8 wt%, the dielectric constant becomes lower. And the rate of change in capacity becomes large, making it impractical. The amount of MnO ₂ added was 0.40 watts.
If it exceeds t%, the dielectric constant similarly decreases, and the rate of change in capacitance with temperature increases, which is not practical.

For the reasons described above, the composition of the dielectric 1 in this example was determined. In this embodiment, Nb ₂ O ₅ , MnO ₂ , Dy ₂
Although oxides such as O ₃ were used, similar properties can be obtained by using carbonates, hydroxides, and the like, as in Example 1, provided that the composition after firing becomes a desired composition.

Also, after calcining the main component in advance,
Even if the auxiliary component is added, the effect does not change.

Example 6 First, as a starting material for the dielectric 1, high-purity Ba whose Ba / Ti molar ratio was adjusted to 1 was used.
TiO ₃ powder, BaCO ₃ , CeO ₂ , MnO ₂ , Zn
The powders of O and Nb ₂ O ₅ were weighed so that the composition after firing became (Table 16).

[0068]

[Table 16]

Then, the electronic component shown in FIG. 6 was manufactured in the same manner as in Example 1, and the dielectric constant, the dielectric loss, and the capacitance were measured at a frequency of 1 kHz and a room temperature of 20 ° C. Then, the capacity change rate was determined at −25 ° C. and 85 ° C. based on the capacity at 20 ° C. The results are shown in (Table 17).

[0070]

[Table 17]

Sample Nos. 1, 4, 5, and 6 are JIS-C-5
The other samples satisfy the JD characteristics in the 130 standard, and the other samples satisfy the RD characteristics in the JIS-C-5130 standard.

For samples Nos. 1, 4, 5, and 6,
The maximum capacity change rate at Curie temperature is (ΔC / C ₂₀ ) _max
(%), -55 ° C. to 12
In the range of 5 ° C., the absolute value of the maximum capacity change rate is | ΔC /
C ₂₀ | _max (%).

Table 17 shows that the electronic component of this example has a large relative dielectric constant of about 2300 to 5100 and an excellent dielectric loss of 1.1% or less.

Next, the reason for determining the composition of the dielectric 1 in this embodiment will be described with reference to FIG. Above the straight line ae, the rate of change in capacitance becomes large and JIS-C-5130
Does not satisfy the JD characteristics in the standard. On the left side of the straight lines ab and bc, sintering becomes difficult, which is not practical. Below the line cd, the effect of adding Nd is small, the dielectric constant is lowered, and the sinterability is also poor. On the right side of the straight line de, generation of a secondary phase is remarkable on the surface of the sintered body, and the dielectric constant tends to decrease, which is not practical.

When Nb—Zn or Nb—Zn—Mn is used as a sub-component and Nb ₂ O ₅ is less than 0.6% by weight, sinterability deteriorates and dielectric loss increases. If it exceeds 2.4% by weight, the dielectric constant decreases, and it is not practical. If ZnO is less than 0.05% by weight, there is no effect of addition, and if it exceeds 0.80% by weight, the dielectric constant is lowered and the rate of change in capacitance with temperature is increased, so that it is not practical. Further, when both ZnO and MnO ₂ are added, the addition effect can be obtained if the total addition amount is 0.05 wt% or more, but if the total addition exceeds 0.8 wt%, the dielectric constant becomes lower. And the rate of change in capacity becomes large, making it impractical. The amount of MnO ₂ added was 0.40 watts.
If it exceeds t%, the dielectric constant similarly decreases, and the capacitance temperature change rate increases, which is not practical.

For the above reasons, the composition in this example was determined. In this embodiment, the dielectric 1
Although oxides such as Nb ₂ O ₅ , MnO ₂ , and CeO ₂ were used as starting materials, carbonates, hydroxides, and the like were used as in Example 1 if the composition after firing was as desired. The same characteristics can be obtained even when used.

After the main component is calcined in advance,
Even if the auxiliary component is added, the effect does not change.

Example 7 First, as a starting material of the dielectric 1, high-purity Ba whose Ba / Ti molar ratio was adjusted to 1 was used.
TiO ₃ powder, BaCO ₃ , Nd ₂ O ₃ , MnO ₂ , Zn
The powders of O and Nb ₂ O ₅ were weighed so that the composition after firing became (Table 18).

[0079]

[Table 18]

Then, the electronic component shown in FIG. 6 was manufactured in the same manner as in Example 1, and the dielectric constant, the dielectric loss, and the capacitance were measured at a frequency of 1 kHz and a room temperature of 20 ° C. Then, the capacity change rate was determined at −25 ° C. and 85 ° C. based on the capacity at 20 ° C. The results are shown in (Table 19).

[0081]

[Table 19]

Samples Nos. 1, 4 and 6 are JIS-C-513.
JD characteristics in standard 0, other samples are JI
In the SC-5130 standard, the RD characteristic with a smaller capacitance temperature change rate is satisfied.

For Samples Nos. 1, 4, and 6, the maximum capacity change rate at Curie temperature was (ΔC / C ₂₀ ).
_max (%), for other samples from -55 ° C
The absolute value of the maximum capacity change rate in the range of 125 ° C. is | Δ
C / C ₂₀ | _max (%).

From Table 19, it can be seen that the electronic component of this example has a high relative dielectric constant of about 2400 to 5200 and a very high dielectric loss of 1.0% or less. .

Next, the reason for determining the composition of the dielectric 1 in this embodiment will be described with reference to FIG. Above the straight line ae, the rate of change in capacitance becomes large and JIS-C-5130
Does not satisfy the JD characteristics in the standard. On the left side of the straight lines ab and bc, sintering becomes difficult, which is not practical. Below the line cd, the effect of adding Nd is small, the dielectric constant is lowered, and the sinterability is also poor. On the right side of the straight line de, generation of a secondary phase is remarkable on the surface of the sintered body, and the dielectric constant tends to decrease, which is not practical.

In the case of Nb—Zn or Nb—Zn—Mn as a subcomponent, if Nb ₂ O ₅ is less than 0.6 wt%, the sinterability deteriorates, and the dielectric loss increases. If it exceeds 2.4% by weight, the dielectric constant decreases, and it is not practical. If ZnO is less than 0.05% by weight, there is no effect of addition, and if it exceeds 0.80% by weight, the dielectric constant is lowered and the rate of change in capacitance with temperature is increased, so that it is not practical. Further, when both ZnO and MnO ₂ are added, the addition effect can be obtained if the total addition amount is 0.05 wt% or more, but if the total addition exceeds 0.8 wt%, the dielectric constant becomes lower. And the rate of change in capacity becomes large, making it impractical. The amount of MnO ₂ added was 0.40 watts.
If it exceeds t%, the dielectric constant similarly decreases, and the capacitance temperature change rate increases, which is not practical.

For the above reasons, the composition in this example was determined. In this embodiment, the dielectric 1
Oxides such as Nb ₂ O ₅ , MnO ₂ , Nd ₂ O ₃ were used as starting materials for the above. However, as in Example 1, if the composition after firing becomes the desired one, carbonates, hydroxides The same characteristics can be obtained by using these methods.

Further, after calcining the main component in advance,
Even if the auxiliary component is added, the effect does not change.

(Embodiment 8) First, as a starting material of the dielectric 1, high-purity Ba whose molar ratio of Ba / Ti was adjusted to 1 was used.
TiO ₃ powder, BaCO ₃ , Sm ₂ O ₃ , MnO ₂ , Zn
Each powder of O and Nb ₂ O ₅ was weighed so that the composition after firing became (Table 20).

[0090]

[Table 20]

Then, the electronic component shown in FIG. 6 was manufactured in the same manner as in Example 1, and the dielectric constant, the dielectric loss, and the capacitance were measured under the conditions of a frequency of 1 kHz and a room temperature of 20 ° C. Then, the capacity change rate was determined at −25 ° C. and 85 ° C. based on the capacity at 20 ° C. The results are shown in (Table 21).

[0092]

[Table 21]

Sample Nos. 1, 4, 5, and 6 are JIS-C-5
The other samples satisfy the JD characteristics in the 130 standard, and the other samples satisfy the RD characteristics in which the rate of change in capacitance with temperature is smaller in the JIS-C-5130 standard.

For samples Nos. 1, 4, 5, and 6, the maximum capacity change rate at the Curie temperature was (ΔC / C ₂₀ ).
_max (%), for other samples from -55 ° C
The absolute value of the maximum capacity change rate in the range of 125 ° C. is | Δ
C / C ₂₀ | _max (%).

From Table 21, it can be seen that the electronic component of this example has a large relative dielectric constant of about 2400 to 5200 and a very high dielectric loss of 1.2% or less.

Next, the reason for determining the composition of the dielectric 1 in this embodiment will be described with reference to FIG. Above the straight line ae, the rate of change in capacitance becomes large and JIS-C-5130
Does not satisfy the JD characteristics in the standard. On the left side of the straight lines ab and bc, sintering becomes difficult, which is not practical. Below the line cd, the effect of adding Nd is small, the dielectric constant is lowered, and the sinterability is also poor. On the right side of the straight line de, generation of a secondary phase is remarkable on the surface of the sintered body, and the dielectric constant tends to decrease, which is not practical.

In the case of Nb—Zn or Nb—Zn—Mn as a subcomponent, if Nb ₂ O ₅ is less than 0.6% by weight, sinterability deteriorates and dielectric loss increases. If it exceeds 2.4% by weight, the dielectric constant decreases, and it is not practical. If ZnO is less than 0.05% by weight, there is no effect of addition, and if it exceeds 0.80% by weight, the dielectric constant is lowered and the rate of change in capacitance with temperature is increased, so that it is not practical. Further, when both ZnO and MnO ₂ are added, the addition effect can be obtained if the total addition amount is 0.05 wt% or more, but if the total addition exceeds 0.8 wt%, the dielectric constant becomes lower. And the rate of change in capacity becomes large, making it impractical. The amount of MnO ₂ added was 0.40 watts.
If it exceeds t%, the dielectric constant similarly decreases, and the capacitance temperature change rate increases, which is not practical.

For the above reasons, the composition in this example was determined. In this embodiment, the dielectric 1
Oxides such as Nb ₂ O ₅ , MnO ₂ , SmO _3/2 were used as starting materials for the above. However, as in Example 1, if the composition after firing becomes a desired one, carbonates, hydroxides, etc. The same characteristics can be obtained by using these methods.

Also, after the main component is calcined in advance,
Even if the auxiliary component is added, the effect does not change.

In the above embodiment, the description has been made of the capacitor using only one dielectric. However, the dielectric is made into a layer, the dielectric and the electrode are alternately laminated, and the electrode is alternately drawn to both ends. The present invention can also be applied to a dielectric of a multilayer ceramic capacitor having external electrodes formed thereon.

[0101]

As described above, the electronic component of the present invention suppresses the generation of the secondary phase on the surface of the sintered body, and has a high relative dielectric constant and a small dielectric loss (tan δ). ,
The temperature change rate of the dielectric material satisfies the JD characteristics in JIS-C-5130 standard.

Since the composition of the dielectric does not contain bismuth which easily reacts with palladium, Pd can be used for the electrode.

[Brief description of the drawings]

FIG. 1 is a ternary component diagram of BaO-TiO ₂ -DyO _3/2 of the present invention.

FIG. 2 is a ternary component diagram of BaO—TiO ₂ —CeO ₂ of the present invention.

FIG. 3 is a ternary component diagram of BaO—TiO ₂ —NdO _3/2 of the present invention.

FIG. 4 is a ternary component diagram of BaO—TiO ₂ —SmO _3/2 of the present invention.

FIG. 5 is a manufacturing process diagram of an electronic component according to an embodiment of the present invention.

FIG. 6 is a perspective view of an electronic component according to one embodiment of the present invention.

[Explanation of symbols]

 1 Dielectric 2 Silver electrode

──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-62-229602 (JP, A) JP-A-2-64060 (JP, A) JP-A-55-53007 (JP, A) JP-A-3-302 45557 (JP, A) JP-A-4-114962 (JP, A) (58) Fields investigated (Int. Cl. ⁷ , DB name) H01B 3/12 303 C04B 35/46 H01G 4/12 358

Claims (12)

(57) [Claims] 1. A semiconductor device comprising: a dielectric; and at least two electrodes provided on the dielectric, wherein the dielectric comprises xBaO + yTi.
O ₂ + zDyO _3/2 (where x, y, and z are molar ratios and x
+ Y + z = 1) , a composition represented in a pentagonal region having vertices of a, b, c, d, and e shown in (Table 1) as a main component, and Nb as a subcomponent. 0.6 to 2.4 parts by weight in terms of nb ₂ O _5, 0.05~0.8 parts by weight in terms of Ni to NiO, and Mn in terms of MnO ₂ 0.01 to 0.4 An electronic component formed of at least one of the parts by weight. [Table 1] 2. The composition according to claim 1, wherein niobium is converted into Nb ₂ O ₅ as a sub-component in the amount of 0.6 as a sub-component.
２2.4 parts by weight, converted from zinc to ZnO 0.05０．０５
2. The electronic component according to claim 1, wherein 0.8 parts by weight are contained. 3. The composition according to claim 1, wherein niobium is converted into Nb ₂ O ₅ as a sub-component in an amount of 0.6 as a sub-component.
To 2.4 parts by weight, and a total of 0.05 to 0.8 parts by weight in terms of zinc and manganese converted to ZnO and MnO ₂ (provided that 0 <M
The electronic component according to claim 1, wherein nO ₂ ≦ 0.4 parts by weight. 4. A dielectric comprising: a dielectric; and at least two electrodes provided on the dielectric, wherein the dielectric comprises xBaO + yTi.
O ₂ + z CeO ₂ (where x, y, and z indicate molar ratios and x +
In the ternary component diagram of ( y + z = 1) , a composition represented in a pentagonal region having vertices of a, b, c, d, and e shown in (Table 2) is a main component, and Nb is a subcomponent. 0.6 to 2.4 parts by weight in terms of nb ₂ O _5, 0.05~0.8 parts by weight in terms of Ni to NiO, and Mn in terms of MnO ₂ 0.01 to 0.4 An electronic component formed of at least one of the parts by weight. [Table 2] 5. A dielectric material according to claim 4, wherein niobium is converted into Nb ₂ O ₅ as a sub-component by 0.6 as a sub-component.
２2.4 parts by weight, converted from zinc to ZnO 0.05０．０５
5. The electronic component according to claim 4, wherein 0.8 parts by weight are contained. 6. A niobium equivalent to 0.6% in terms of Nb ₂ O ₅ as a subcomponent instead of the subcomponent of the dielectric according to claim 4.
To 2.4 parts by weight, and a total of 0.05 to 0.8 parts by weight in terms of zinc and manganese converted to ZnO and MnO ₂ (provided that 0 <M
5. The electronic component according to claim 4, wherein nO ₂ ≦ 0.4 parts by weight. 7. A dielectric comprising: a dielectric; and at least two electrodes provided on the dielectric, wherein the dielectric comprises xBaO + yTi.
O ₂ + zNdO _3/2 (where x, y, and z are molar ratios and x
+ Y + z = 1) , a composition represented in a pentagonal region having vertices of a, b, c, d, and e shown in (Table 3) as a main component, and Nb as a subcomponent To Nb ₂ O ₅
0.6 to 2.4 parts by weight in terms of, 0.05 to 0.8 parts by weight in terms of Ni to NiO, of 0.01 to 0.4 parts by weight in terms of Mn to MnO ₂ An electronic component formed of a material containing at least one type. [Table 3] 8. A niobium equivalent to Nb ₂ O ₅ , which is 0.6% as a minor component, in place of the minor component of the dielectric according to claim 7.
２2.4 parts by weight, converted from zinc to ZnO 0.05０．０５
The electronic component according to claim 7, wherein 0.8 parts by weight are contained. 9. Instead of the sub-component of the dielectric according to claim 7, as a sub-component, in terms of niobium Nb ₂ O ₅ 0.6
To 2.4 parts by weight, and a total of 0.05 to 0.8 parts by weight in terms of zinc and manganese converted to ZnO and MnO ₂ (provided that 0 <M
The electronic component according to claim 7, wherein nO ₂ ≦ 0.4 parts by weight. 10. A dielectric and at least two dielectrics on the dielectric.
Provided with two electrodes, wherein the dielectric is xBaO + yT
iO ₂ + zSmO _3/2 (where x, y, and z indicate molar ratios)
x + y + z = 1) , the main component is a composition represented in a pentagonal region having vertices of a, b, c, d, and e shown in (Table 4), and Nb is a subcomponent. Nb ₂ O ₅
0.6 to 2.4 parts by weight in terms of, 0.05 to 0.8 parts by weight in terms of Ni to NiO, of 0.01 to 0.4 parts by weight in terms of Mn to MnO ₂ An electronic component formed of a material containing at least one type. [Table 4] 11. A dielectric material according to claim 10, wherein niobium is converted into Nb ₂ O ₅ as a sub-component to form a sub-component of 0.1%.
6 to 2.4 parts by weight, converted from zinc to ZnO, from 0.05 to
The electronic component according to claim 10, wherein the content is 0.8 parts by weight. 12. The dielectric component according to claim 10, wherein niobium is converted into Nb ₂ O ₅ as a sub-component to form a sub-component of 0.1%.
6 to 2.4 parts by weight, zinc and manganese are ZnO, MnO ₂
0.05 to 0.8 parts by weight (provided that 0 <
The electronic component according to claim 10, further comprising (MnO ₂ ≦ 0.4 parts by weight).