JP3316875B2 - Method of manufacturing magnetoresistive head - Google Patents
Method of manufacturing magnetoresistive headInfo
- Publication number
- JP3316875B2 JP3316875B2 JP19374492A JP19374492A JP3316875B2 JP 3316875 B2 JP3316875 B2 JP 3316875B2 JP 19374492 A JP19374492 A JP 19374492A JP 19374492 A JP19374492 A JP 19374492A JP 3316875 B2 JP3316875 B2 JP 3316875B2
- Authority
- JP
- Japan
- Prior art keywords
- lift
- pattern
- layer
- head
- magnetoresistive element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Description
【0001】[0001]
【産業上の利用分野】本発明は高密度記憶装置に用いら
れる磁気抵抗効果型ヘッドの製造方法に関するものであ
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a magnetoresistive head used in a high-density storage device.
【0002】[0002]
【従来の技術】近年、コンピューターの高性能化に伴い
高密度記憶装置であるハードディスクの小型化、高容量
化が要求され、特に、小型化・軽量化に伴い磁気記録媒
体の回転速度等が低下してくることから、磁気記録媒体
との相対速度に依存しない磁気抵抗効果型ヘッドの必要
性が高くなってきた。磁気抵抗効果型ヘッドは従来の誘
導型の薄膜磁気ヘッドを書き込み専用ヘッドとし、磁気
抵抗素子を読み出し専用ヘッドとして使用した複合型の
薄膜磁気ヘッドである。磁気抵抗効果型ヘッドでは磁気
抵抗素子を読み出し専用ヘッドとして使用しているため
読み取り出力が磁気記録媒体との相対速度に依存せず原
理的には磁気記録媒体が回転しなくともそのデータを読
み取ることができる。2. Description of the Related Art In recent years, as the performance of computers has increased, the size and capacity of hard disks, which are high-density storage devices, have been required to be reduced. As a result, the need for a magnetoresistive head that does not depend on the relative speed with respect to the magnetic recording medium has increased. The magnetoresistive head is a composite thin film magnetic head using a conventional inductive type thin film magnetic head as a write-only head and a magnetoresistive element as a read-only head. Since the magneto-resistive head uses the magneto-resistive element as a read-only head, the read output does not depend on the relative speed with the magnetic recording medium, and in principle the data can be read even if the magnetic recording medium does not rotate. Can be.
【0003】以下に従来の磁気抵抗効果型ヘッドについ
て説明する。図2は一般的な磁気抵抗効果型ヘッドの要
部断面図である。[0003] A conventional magnetoresistive head will be described below. FIG. 2 is a sectional view of a main part of a general magnetoresistive head.
【0004】1はMn−Zn−フェライト等の材料より
なる基板、2は表面研磨された基板1の表面にスパッタ
法や蒸着法等の物理的薄膜形成法で1000〜2000
Åに形成されたSiO2 等の絶縁材料からなる絶縁層、
3は蒸着法やスパッタ法、CVD法等の物理的薄膜形成
法で形成された下部磁性層からなる書き込み専用ヘッド
の下部コア、4は物理的薄膜形成法で形成された磁気ギ
ャップ、5は物理的薄膜形成法で形成された上部磁性層
からなる書き込み専用ヘッドの上部コア、6はコイル、
7は絶縁層である。[0004] Reference numeral 1 denotes a substrate made of a material such as Mn-Zn-ferrite, and 2 denotes a substrate having a surface polished by a physical thin film forming method such as a sputtering method or a vapor deposition method.
An insulating layer made of an insulating material such as SiO 2 formed in Å,
Reference numeral 3 denotes a lower core of a write-only head comprising a lower magnetic layer formed by a physical thin film forming method such as a vapor deposition method, a sputtering method, and a CVD method. Reference numeral 4 denotes a magnetic gap formed by a physical thin film forming method. Upper core of a write-only head comprising an upper magnetic layer formed by a thin film forming method, 6 is a coil,
7 is an insulating layer.
【0005】以上のように構成された従来の磁気抵抗効
果型ヘッドの製造方法について説明する。A method of manufacturing the conventional magnetoresistive head having the above-described structure will be described.
【0006】図3は従来の磁気抵抗効果型ヘッドの製造
方法におけるリフトオフ工程図であり、(a)は磁気抵
抗素子部の形成工程、(b)はリフトオフパターンの形
成工程、(c)は引出し電極の形成工程、(d)は引出
し電極パターンのリフトオフ工程、(e)はミリングパ
ターン形成後のイオンミリング工程、(f)はレジスト
除去後の書き込みヘッド形成工程である。FIGS. 3A and 3B are views showing a lift-off process in a conventional method of manufacturing a magnetoresistive head. FIG. 3A shows a process of forming a magnetoresistive element portion, FIG. 3B shows a process of forming a lift-off pattern, and FIG. (D) is a lift-off step of the extraction electrode pattern, (e) is an ion milling step after forming the milling pattern, and (f) is a write head forming step after removing the resist.
【0007】まず、図3(a)の工程で、Mn−Zn−
フェライトなどの材料により形成された例えば直径φ
3”厚さ2.8mmの基板1の表面を仕上研磨した後、S
iO2等の絶縁材料をスパッタまたは物理的蒸着法等で
例えば1500Åの絶縁層2を形成した後、軟磁性バイ
アス補助層8を例えば500Åの膜厚で形成し、その上
に非磁性層9を例えば100Åの膜厚で形成し、次い
で、パーマロイの磁気抵抗素子層10を形成する。First, in the step of FIG. 3A, Mn-Zn-
For example, diameter φ made of material such as ferrite
After finishing polishing the surface of the substrate 1 having a thickness of 3 "2.8 mm,
After forming an insulating layer 2 of, for example, 1500 ° by an insulating material such as iO 2 by sputtering or physical vapor deposition, a soft magnetic bias auxiliary layer 8 is formed to a thickness of, for example, 500 °, and a nonmagnetic layer 9 is formed thereon. For example, a film having a thickness of 100 ° is formed, and then a permalloy magnetoresistive element layer 10 is formed.
【0008】次に、図3(b)の工程で、読み取りトラ
ック部のリフトオフパターン11を形成し、次いで、図
3(c)の工程でこれに引出し電極12を形成した後、
図3(d)の工程で引出し電極12の形状をフォトレジ
ストによりパターンニングをする。次いで図3(e)の
工程でイオンミリングにより電極形状以外の部分を除去
した後、図3(f)の工程で磁気ギャップ4、上部コア
5を形成していた。Next, in the step of FIG. 3B, a lift-off pattern 11 of the read track portion is formed, and then, in the step of FIG.
In the step of FIG. 3D, the shape of the extraction electrode 12 is patterned with a photoresist. Next, after removing portions other than the electrode shape by ion milling in the step of FIG. 3E, the magnetic gap 4 and the upper core 5 were formed in the step of FIG.
【0009】[0009]
【発明が解決しようとする課題】しかしながら上記従来
の構成では、イオンミリングに時間が掛かり、生産性が
悪く原価を上げ量産性に欠けるという問題点を有してい
た。更に、イオンミリング時に図3(e),(f)に示
すように引出し電極12の側端部に再付着部13が形成
されることにより、書き込み専用ヘッドの下部コア3と
の電気絶縁性が悪く特性に悪影響を与え最悪な場合、出
力を得ることが出来ないという問題点を有していた。However, in the above-mentioned conventional configuration, there is a problem that it takes a long time for ion milling, productivity is poor, cost is increased, and mass productivity is lacking. Further, as shown in FIGS. 3 (e) and 3 (f), the reattachment portion 13 is formed at the side end of the extraction electrode 12 during ion milling, so that the electrical insulation with the lower core 3 of the write-only head is improved. In the worst case, there is a problem that an output cannot be obtained.
【0010】本発明は上記従来の問題点を解決するもの
で、高密度記憶装置であるハードディスクに用いられる
磁気抵抗効果型ヘッドの磁気抵抗素子の引出し電極の形
成方法を簡素化し、ミリング時の再付着部の形成を防止
して絶縁耐圧を確保し安定した出力を得ることができる
量産性に優れた磁気抵抗効果型ヘッドの製造方法を提供
することを目的とする。The present invention solves the above-mentioned conventional problems, and simplifies the method of forming the extraction electrodes of the magnetoresistive element of the magnetoresistive head used in the hard disk as a high-density storage device, thereby reducing the time required for milling. An object of the present invention is to provide a method of manufacturing a magnetoresistive head excellent in mass productivity capable of preventing formation of an attached portion and securing a withstand voltage and obtaining a stable output.
【0011】[0011]
【課題を解決するための手段】この目的を達成するため
に本発明の磁気抵抗効果型ヘッドの製造方法は、磁気ギ
ャップを介して積層された上部磁性層及び下部磁性層
と、上部及び下部磁性層と両磁性層間を通り磁気回路と
交差する所定巻数のコイルと、コイル相互間及びコイル
と上部下部磁性層間を電気的に絶縁する絶縁膜と、から
構成される書き込み専用ヘッドと、読み出し専用ヘッド
としての磁気抵抗素子と、からなる磁気抵抗効果型ヘッ
ドの製造方法であって、少なくとも磁気抵抗素子部を形
成する際、軟磁性バイアス補助層、非磁性層、及び磁気
抵抗素子層を形成後、その上に第1のリフトオフパター
ンを設けると共に第1のリフトオフパターンの両側に第
2,第3のリフトオフパターンをそれぞれ形成し、その
後、第1〜第3のリフトオフパターン上及び第1〜第3
のリフトオフパターン間に位置した磁気抵抗素子層の上
の双方に引き出し電極層を形成してその後第1〜第3の
リフトオフパターンを除去することで、第1のリフトオ
フパターンと第2のリフトオフパターンの間に設けられ
た引き出し電極層を一方の引き出し電極とし、第1のリ
フトオフパターンと第3のリフトオフパターンの間に設
けられた引き出し電極層を他方の引き出し電極として一
対の引き出し電極を形成し、一対の引き出し電極とその
一対の引き出し電極間にむき出しになった磁気抵抗素子
層上に連続的にミリングパターンを形成すると共に、ミ
リングパターンは一対の引き出し電極のそれぞれの両端
がむき出しになるように形成し、その後一対の引き出し
電極間以外の磁気抵抗素子層及び一対の引き出し電極の
両端をエッチング等で除去する構成からなる。In order to achieve this object, a method of manufacturing a magnetoresistive head according to the present invention comprises an upper magnetic layer and a lower magnetic layer stacked via a magnetic gap; A write-only head and a read-only head each including a coil having a predetermined number of turns passing through a layer and both magnetic layers and intersecting a magnetic circuit, and an insulating film electrically insulating the coils from each other and between the coil and the upper and lower magnetic layers. And a method of manufacturing a magnetoresistive head, comprising: forming a soft magnetic bias auxiliary layer, a non-magnetic layer, and a magnetoresistive element layer at least when forming a magnetoresistive element portion , The first lift-off putter
And a first lift-off pattern on both sides.
(2) forming a third lift-off pattern,
After that, the first to third lift-off patterns and the first to third lift-off patterns
On the magnetoresistive element layer located between the lift-off patterns
Are formed on both sides, and then the first to third
By removing the lift-off pattern, the first lift-off
Between the lift pattern and the second lift-off pattern.
The first extraction electrode layer is used as one extraction electrode,
Between the lift-off pattern and the third lift-off pattern.
The extracted extraction electrode layer serves as the other extraction electrode.
A pair of extraction electrodes is formed, and a pair of extraction electrodes and
Magnetoresistive element exposed between a pair of extraction electrodes
While continuously forming a milling pattern on the layer,
The ring pattern is at both ends of each of a pair of extraction electrodes
And a pair of drawers
Of the magnetoresistive element layer and the pair of extraction electrodes except between the electrodes.
Both ends are removed by etching or the like.
【0012】[0012]
【作用】この構成によって、引出し電極の形成工程が簡
素化できる。また、ミリング時の再付着部の形成を防止
することができるので絶縁耐圧を高めることができる。According to this structure, the process of forming the extraction electrode can be simplified. Further, the formation of the reattached portion during milling can be prevented, so that the withstand voltage can be increased.
【0013】[0013]
【実施例】以下本発明の一実施例について、図面を参照
しながら説明する。An embodiment of the present invention will be described below with reference to the drawings.
【0014】図1は本実施例の磁気抵抗効果型ヘッドの
製造方法におけるリフトオフ工程図であり、(a)は磁
気抵抗素子部の形成工程、(b)はリフトオフパターン
の形成工程、(c)は引出し電極の形成工程、(d)は
引出し電極パターンのリフトオフ工程、(e)はミリン
グパターン形成後のイオンミリング工程、(f)はレジ
スト除去後の書き込みヘッド形成工程である。FIGS. 1A and 1B are diagrams showing a lift-off process in the method of manufacturing a magnetoresistive head according to the present embodiment. FIG. 1A shows a process of forming a magnetoresistive element portion, FIG. 1B shows a process of forming a lift-off pattern, and FIG. (D) is a lift-off step of the extraction electrode pattern, (e) is an ion milling step after the formation of the milling pattern, and (f) is a write head formation step after the removal of the resist.
【0015】従来例と異なるのは、(b)工程がフォト
レジストを全体に塗布し磁気抵抗素子層10のリフトオ
フパターン14の形状をパターニングする工程からなる
点であり、また、(d)工程がミリングマスクを全体に
塗布し、引出し電極のリフトオフパターンより小さなパ
ターン形状をパターニングし、イオンミリングにより残
りの磁気抵抗素子層をエッチング等で除去する工程から
なる点である。The difference from the conventional example is that the step (b) comprises a step of coating a photoresist entirely and patterning the shape of the lift-off pattern 14 of the magnetoresistive element layer 10, and the step (d). This is a step of applying a milling mask over the entire surface, patterning a pattern shape smaller than the lift-off pattern of the extraction electrode, and removing the remaining magnetoresistive element layer by etching or the like by ion milling.
【0016】リフトオフパターンを読み取りトラック部
と合わせて引出し電極の形状をパターンニングした後、
図1(c)工程でスパッタ法または蒸着等の方法により
引出し電極12を形成する。この時フォトレジスト膜の
厚さは引出し電極12がリフトオフし易いような条件を
選択する。例えば、引出し電極12が2000Åの膜厚
ならばフォトレジストの厚さは2μm以上に設定するの
が望ましい。次に、図1(d)工程で溶剤またはリムー
バーにより引出し電極12をリフトオフする。次に、図
1(e)工程でフォトレジスト等からなるイオンミリン
グマスク15を全体に塗布し、引出し電極12のリフト
オフパターンより1〜2μm小さなパターン形状をパタ
ーニングし、120℃のプリベークを行った後、イオン
ミリングにより軟磁性バイアス補助層8、非磁性層9、
及び磁気抵抗素子層10を除去する。 更に、図1
(f)工程でこの上に書き込み専用ヘッドの下部コア3
と上部コア5を形成する。After patterning the shape of the extraction electrode by combining the lift-off pattern with the reading track portion,
In the step shown in FIG. 1C, the extraction electrode 12 is formed by a method such as a sputtering method or a vapor deposition method. At this time, the thickness of the photoresist film is selected so that the extraction electrode 12 is easily lifted off. For example, if the extraction electrode 12 has a thickness of 2000 °, the thickness of the photoresist is desirably set to 2 μm or more. Next, in the step of FIG. 1D, the extraction electrode 12 is lifted off by a solvent or a remover. Next, in step (e) of FIG. 1, an ion milling mask 15 made of a photoresist or the like is applied to the entire surface, and a pattern shape smaller than the lift-off pattern of the extraction electrode 12 by 1 to 2 μm is applied. A soft magnetic bias auxiliary layer 8, a non-magnetic layer 9,
Then, the magnetoresistive element layer 10 is removed. Further, FIG.
In step (f), the lower core 3 of the write-only head is placed thereon.
And the upper core 5 is formed.
【0017】[0017]
【発明の効果】以上のように本発明は、磁気ギャップを
介して積層された上部磁性層及び下部磁性層と、上部及
び下部磁性層と両磁性層間を通り磁気回路と交差する所
定巻数のコイルと、コイル相互間及びコイルと上部下部
磁性層間を電気的に絶縁する絶縁膜と、から構成される
書き込み専用ヘッドと、読み出し専用ヘッドとしての磁
気抵抗素子と、からなる磁気抵抗効果型ヘッドの製造方
法であって、少なくとも磁気抵抗素子部を形成する際、
軟磁性バイアス補助層、非磁性層、及び磁気抵抗素子層
を形成後、その上に第1のリフトオフパターンを設ける
と共に第1のリフトオフパターンの両側に第2,第3の
リフトオフパターンをそれぞれ形成し、その後、第1〜
第3のリフトオフパターン上及び第1〜第3のリフトオ
フパターン間に位置した磁気抵抗素子層の上の双方に引
き出し電極層を形成してその後第1〜第3のリフトオフ
パターンを除去することで、第1のリフトオフパターン
と第2のリフトオフパターンの間に設けられた引き出し
電極層を一方の引き出し電極とし、第1のリフトオフパ
ターンと第3のリフトオフパターンの間に設けられた引
き出し電極層を他方の引き出し電極として一対の引き出
し電極を形成し、一対の引き出し電極とその一対の引き
出し電極間にむき出しになった磁気抵抗素子層上に連続
的にミリングパターンを形成すると共に、ミリングパタ
ーンは一対の引き出し電極のそれぞれの両端がむき出し
になるように形成し、その後一対の引き出し電極間以外
の磁気抵抗素子層及び一対の引き出し電極の両端をエッ
チング等で除去するので、引出し電極の形成方法が極め
て簡素化でき、生産性を著しく向上させるとともにミリ
ング時の再付着部の形成を防止できるので絶縁耐圧が確
保され安定した出力を得ることができる低原価で量産性
に優れた磁気抵抗効果型ヘッドの製造方法を実現できる
ものである。As described above, according to the present invention, the magnetic gap is increased.
An upper magnetic layer and a lower magnetic layer
Crossing the magnetic circuit through the lower magnetic layer and both magnetic layers
Coil with a fixed number of turns, between coils, and between coil and upper and lower
An insulating film for electrically insulating the magnetic layers.
Write-only head and read-only head
Method of manufacturing magnetoresistive head comprising magnetoresistive element
Method, at least when forming the magnetoresistive element portion,
Soft magnetic bias auxiliary layer, non-magnetic layer, and magnetoresistive element layer
Is formed, and a first lift-off pattern is provided thereon.
And second and third lift-off patterns on both sides of the first lift-off pattern.
Lift-off patterns are formed respectively, and then
On the third lift-off pattern and the first to third lift-off patterns
On both sides of the magnetoresistive element layer located between
After forming the extraction electrode layer, first to third lift-off
By removing the pattern, the first lift-off pattern
And a drawer provided between the second lift-off pattern
The electrode layer is used as one lead electrode, and the first lift-off
A pull provided between the turn and the third lift-off pattern
A pair of extraction electrodes using the extraction electrode layer as the other extraction electrode
A pair of extraction electrodes and the pair of extraction electrodes
Continuous on the exposed magnetoresistive element layer between the extension electrodes
Forming a milling pattern
Both ends of a pair of extraction electrodes are exposed
And then except between the pair of extraction electrodes
Since both ends of the magnetoresistive element layer and the pair of extraction electrodes are removed by etching or the like, the method of forming the extraction electrodes can be extremely simplified, productivity can be significantly improved, and the reattached portion during milling can be removed. Since the formation can be prevented, a method of manufacturing a magnetoresistive head of low cost and excellent in mass productivity capable of securing a withstand voltage and obtaining a stable output can be realized.
【図1】本実施例の磁気抵抗効果型ヘッドの製造方法に
おけるリフトオフ工程図 (a)磁気抵抗素子部の形成工程図 (b)リフトオフパターンの形成工程図 (c)引出し電極の形成工程図 (d)引出し電極パターンのリフトオフ工程図 (e)ミリングパターン形成後のイオンミリング工程図 (f)レジスト除去後の書き込みヘッド形成工程図FIG. 1 is a diagram showing a lift-off process in a method of manufacturing a magnetoresistive head according to the present embodiment. (A) A diagram showing a process of forming a magnetoresistive element portion. (B) A diagram showing a process of forming a lift-off pattern. d) Lift-off process of the extraction electrode pattern (e) Ion milling process after forming the milling pattern (f) Write head forming process after removing the resist
【図2】一般的な磁気抵抗効果型ヘッドの要部断面図FIG. 2 is a sectional view of a main part of a general magnetoresistive head.
【図3】従来の磁気抵抗効果型ヘッドの製造方法におけ
るリフトオフ工程図 (a)磁気抵抗素子部の形成工程図 (b)リフトオフパターンの形成工程図 (c)引出し電極の形成工程図 (d)引出し電極パターンのリフトオフ工程図 (e)ミリングパターン形成後のイオンミリング工程図 (f)レジスト除去後の書き込みヘッド形成工程図3A and 3B are lift-off process diagrams in a conventional method of manufacturing a magnetoresistive head; FIG. 3A is a process diagram of forming a magnetoresistive element portion; FIG. 3B is a process diagram of a lift-off pattern; (E) Ion milling process after forming the milling pattern (f) Write head forming process after removing the resist
1 基板 2 絶縁層 3 下部コア 4 磁気ギャップ 5 上部コア 6 コイル 7 絶縁層 8 軟磁性バイアス補助層 9 非磁性層 10 磁気抵抗素子層 11 リフトオフパターン 12 引出し電極 13 再付着部 14 リフトオフパターン 15 イオンミリングマスク DESCRIPTION OF SYMBOLS 1 Substrate 2 Insulating layer 3 Lower core 4 Magnetic gap 5 Upper core 6 Coil 7 Insulating layer 8 Soft magnetic bias auxiliary layer 9 Nonmagnetic layer 10 Magnetoresistance element layer 11 Lift-off pattern 12 Leader electrode 13 Reattachment part 14 Lift-off pattern 15 Ion milling mask
Claims (1)
層及び下部磁性層と、前記上部及び下部磁性層と両磁性
層間を通り磁気回路と交差する所定巻数のコイルと、前
記コイル相互間及び前記コイルと前記上部下部磁性層間
を電気的に絶縁する絶縁膜と、から構成される書き込み
専用ヘッドと、読み出し専用ヘッドとしての磁気抵抗素
子と、からなる磁気抵抗効果型ヘッドの製造方法であっ
て、少なくとも前記磁気抵抗素子部を形成する際、軟磁
性バイアス補助層、非磁性層、及び磁気抵抗素子層を形
成後、その上に第1のリフトオフパターンを設けると共
に前記第1のリフトオフパターンの両側に第2,第3の
リフトオフパターンをそれぞれ形成し、その後、前記第
1〜第3のリフトオフパターン上及び前記第1〜第3の
リフトオフパターン間に位置した前記磁気抵抗素子層の
上の双方に引き出し電極層を形成してその後前記第1〜
第3のリフトオフパターンを除去することで、前記第1
のリフトオフパターンと前記第2のリフトオフパターン
の間に設けられた引き出し電極層を一方の引き出し電極
とし、前記第1のリフトオフパターンと前記第3のリフ
トオフパターンの間に設けられた引き出し電極層を他方
の引き出し電極として一対の引き出し電極を形成し、前
記一対の引き出し電極とその一対の引き出し電極間にむ
き出しになった前記磁気抵抗素子層上に連続的にミリン
グパターンを形成すると共に、前記ミリングパターンは
前記一対の引き出し電極のそれぞれの両端がむき出しに
なるように形成し、その後前記一対の引き出し電極間以
外の磁気抵抗素子層及び前記一対の引き出し電極の両端
をエッチング等で除去することを特徴とする磁気抵抗効
果型ヘッドの製造方法。An upper magnetic layer and a lower magnetic layer laminated via a magnetic gap; a coil having a predetermined number of turns passing through the upper and lower magnetic layers and both magnetic layers and intersecting a magnetic circuit; A method of manufacturing a magnetoresistive head, comprising: a write-only head including the coil and an insulating film electrically insulating the upper and lower magnetic layers; and a magnetoresistive element serving as a read-only head. In forming at least the magnetoresistive element portion, it is preferable to form a soft magnetic bias auxiliary layer, a nonmagnetic layer, and a magnetoresistive element layer and then provide a first lift-off pattern thereon.
The second and third lift-off patterns on both sides of the first lift-off pattern.
A lift-off pattern is formed, and then the
On the first to third lift-off patterns and the first to third
Of the magnetoresistive element layer located between the lift-off patterns
A lead electrode layer is formed on both of the above, and then the first to first electrodes are formed.
By removing the third lift-off pattern, the first lift-off pattern is removed.
Lift-off pattern and the second lift-off pattern
The extraction electrode layer provided between
And the first lift-off pattern and the third lift-off pattern
The extraction electrode layer provided between the
Forming a pair of extraction electrodes as extraction electrodes for
Between the pair of extraction electrodes and the pair of extraction electrodes
Continuous milling is performed on the exposed magnetoresistive element layer.
Milling pattern, and the milling pattern
Both ends of the pair of extraction electrodes are exposed
And then between the pair of extraction electrodes.
Outside magnetoresistive element layer and both ends of the pair of extraction electrodes
A method for manufacturing a magnetoresistive head, wherein the head is removed by etching or the like.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19374492A JP3316875B2 (en) | 1992-07-21 | 1992-07-21 | Method of manufacturing magnetoresistive head |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19374492A JP3316875B2 (en) | 1992-07-21 | 1992-07-21 | Method of manufacturing magnetoresistive head |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0636240A JPH0636240A (en) | 1994-02-10 |
JP3316875B2 true JP3316875B2 (en) | 2002-08-19 |
Family
ID=16313091
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP19374492A Expired - Lifetime JP3316875B2 (en) | 1992-07-21 | 1992-07-21 | Method of manufacturing magnetoresistive head |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP3316875B2 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1170828B1 (en) | 2000-07-06 | 2012-01-11 | Yazaki Corporation | Protective cover |
-
1992
- 1992-07-21 JP JP19374492A patent/JP3316875B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH0636240A (en) | 1994-02-10 |
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