JP3384663B2 - Focused ion beam processing equipment - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION The present invention uses a sample for a transmission electron microscope (hereinafter abbreviated as TEM) as a focused ion beam (F).
The present invention relates to a focused ion beam processing apparatus for processing by means of an ocused Ion Beam, abbreviated as FIB.

[0002]

2. Description of the Related Art When a TEM sample is prepared by a conventional FIB apparatus, both side portions of the sample to be observed are cut off by an ion beam, and the observation point is left in a thin wall shape parallel to the ion beam incident direction. , As an observation sample.
In this case, the processing speed, the processing amount, and the remaining thickness of the sample were measured using a secondary electron image (SIM image) using secondary electrons generated from the sample during ion beam irradiation.

As a device for applying a voltage to a sample after FIB cross-section processing to obtain cross-sectional images having various potential contrasts, there is a device described in JP-A-5-266849. In other words, this device, from outside the vacuum chamber,
A charged beam device that supplies multiple electrical signals to a sample via a probe, which is used to observe multiple potentials by applying multiple electrical signals to the circuit inside the device, and to observe with a potential contrast. Is a vivid image of.

[0004]

The optimum thickness for observation with an electron microscope is 20 nm to 30 nm. Therefore, the thickness of the sample obtained by FIB processing is 2
It must be processed to 0 nm to 30 nm.

However, at present, the resolution of the secondary electron image at the time of processing the sample of the FIB is about 50 nm, and whether the thickness of the sample is 20 nm to 30 nm is as follows.
It could not be directly confirmed by the secondary electron image.

Therefore, the operator confirms the secondary electron image, judges that the sample has a thickness of 20 nm to 30 nm by the operator's intuition, stops the processing, and confirms the thickness by TEM. Therefore, even when the sample is not actually processed within the range of 20 nm to 30 nm, the FIB processing may be stopped. In this case, the sample must be processed again by FIB processing. Therefore, conventionally, there have been problems that the processing accuracy of the FIB processing is low and the work efficiency is also low.

The present invention is a focused ion which is capable of automatically detecting the processing speed of a sample, the processing amount, the remaining thickness of the sample with high accuracy and capable of producing a thin film sample for electron microscope observation with high accuracy and efficiency. It is to realize a beam processing device.

[0008]

In order to achieve the above object, the present invention is configured as follows. (1) In a focused ion beam processing apparatus for processing a sample by irradiating the surface of the sample with ions emitted from an ion gun, voltage application means for intermittently applying a voltage to the sample being processed ; The voltage is applied by the voltage applying means.
Applied to the sample and the voltage applied
The difference between the current flowing through the sample when not in use is detected, and this voltage is detected.
Based on the flow difference measuring the resistance value of the sample, and a processing progress determining means for determining the progress of the processing of the sample from the change in the measured boss was resistance.

(2) Test the ions emitted from the ion gun
A focusing tool that processes the sample by irradiating the sample surface.
In the on-beam processing equipment, apply a voltage to the sample being processed.
The voltage applying means to be applied and the current flowing through the sample are detected and tested.
The resistance value of the material is measured, and the change in the measured resistance value
The processing progress judgment means to judge the processing progress of
The voltage application to the sample by the voltage applying means is
This is done when the sample processing by the focused ion beam is stopped.
Applying the above voltage when processing a sample with a focused ion beam
The voltage application to the sample by the means is stopped, and the sample is processed and tested.
The voltage application to the material is performed alternately.

(3) Preferably, the above (1) or (2)
In step 1, the processing progress status determination means determines the volume change amount of the sample due to processing from the change in the resistance value of the sample during the processing of the sample, calculates the processing speed of the sample from the value, and determines the processing progress status.

(4) Further, preferably, the above (1) or
In (2) , the processing progress status determination means calculates the remaining processing work time from the change in the measured resistance value to the target sample processing state.

(5) Testing the ions emitted from the ion gun
A focusing tool that processes the sample by irradiating the sample surface.
In the on-beam processing equipment, apply a voltage to the sample being processed.
The voltage application means to be applied and the parameters of the sample before processing
Input length, thickness, width, conductivity and target sample thickness
Stored in the sample and stored in the sample flow
Current detection means to detect the current
The voltage of the voltage applying means is applied so that the voltage is applied intermittently.
The voltage application period control means for controlling the voltage application period, and the current detection
Based on the current value of the sample detected by the output means,
When a voltage is applied by the voltage applying means, it is applied to the sample.
Flow through the sample when no current or voltage is applied
The difference between the current and the current is detected.
Based on the parameters stored in the meter storage means,
Calculate the change in the resistance value of the sample.
Process progress judgment hand to judge the progress of sample processing
And a step.

[0013]

[0014]

[0015]

According to the above structure, by applying a voltage to the sample being processed, the current flowing through the sample and the resistance value can be measured. When this voltage application is intermittently applied to the sample, a current I1 flows by ion irradiation when no voltage is applied to the sample, and a current I2 flows when voltage is applied to the sample.

Therefore, the current flowing by the voltage application to the sample is IV = I2-I1. Alternatively, IV and I1 are automatically separated and measured by alternately applying a voltage to the sample and measuring the current flowing through the sample, and irradiating the sample with ions and measuring the current flowing through the sample. .

Since the voltage V applied to the sample is constant, the resistance R of the sample can be obtained from R = V / IV. The resistance R of the sample is represented by R = ρ · L / a. In this case, ρ
Is the resistivity of the material of the sample, L is the length of the sample, and a is the cross-sectional area of the sample. While the sample is processed by the FIB, L is a preset value and is constant, and ρ is also a value specific to the sample. Therefore, the change amount of R depends on the change amount of the cross-sectional area a.

For example, when the shape of the sample is a rectangular parallelepiped, if one side h of the sectional area a is set to be constant, the change amount of the sectional area a depends on the change amount of the remaining side t. This t is TE
It is the thickness when observing the M sample. The change in the thickness t can be calculated from the change in the resistance R. Further, it is possible to measure the processing amount of the sample. The processing speed is possible by measuring the time τ for processing the sample with the FIB.

[0020]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a basic configuration diagram of a FIB device according to a first embodiment of the present invention. In FIG. 1, an ion beam 2 emitted from an ion gun 1 passes through a condenser lens 3 and an objective lens 4 and is focused on a sample 5. A blanker 6 for removing the ion beam 2 from the sample 5 and a deflector 7 for deflecting and scanning the beam 2 incident on the sample 5 are arranged between the lenses.

The sample 5 is loaded in a sample holder 8 which is movable in two axial directions (X, Y). The movement of the sample holder 8 is performed by the sample holder driving unit 9, and its control is performed by a computer (machining progress determination means) 10 connected via the drive control unit 9. Secondary electrons are generated from the sample 5 on the sample holder 8 by FIB irradiation, and the generated secondary electrons are detected by the secondary electron detector 11.

The secondary electrons detected by the detector 11 synchronize the XY position signal on the CRT 12 of the computer 10 with the deflection control of the ion beam 2 and the secondary electron intensity signal to the brightness (Z signal) of the CRT 12. Then, a scanning ion image is displayed on the CRT 12.

The secondary electron detector 11 includes a detector controller 13
Is connected to the computer 10 to detect the scanning position of the beam 2 and to detect the data via. The blanker 6 is connected to the computer 10 via the blanking controller 14. The deflector 7 is connected to a deflection signal controller 15 that controls the processing area. The deflection signal controller 15 is connected to the computer 10 to obtain beam position data.

The sample holder 8 is loaded with the sample 5, and the sample 5 includes a voltage power source 16 for applying a voltage V to the sample 5 and an ammeter 17 for measuring a current IV flowing through the sample 5. And are connected in series. Voltage power supply 16
Is connected to the voltage power supply controller 18. The voltage power supply control unit 18 and the ammeter 17 are respectively connected to the computer 1.
0, and the computer 10 is connected to the data display unit 19 that displays calculated data and the like.

The current IV that flows when a voltage V is applied to the sample 5 during processing is measured by intermittently applying a voltage to the sample 5 at a certain fixed interval, as shown in FIG. it can. That is, in FIG. 2, when the processing time τ is plotted on the abscissa and the voltage and the current strength are plotted on the ordinate, the current IV is the current level I2 when the voltage V is applied and the voltage V is applied. Current level I1 when not
It is obtained by the difference with.

An example of a method for fixing the sample 5 to the sample holder 8 is shown in FIGS. 3 and 4. FIG. 3 shows the sample 5 before mounting,
It is a figure which shows the sample holding part (voltage application terminal) 20.
A conductive paste 21 is applied to a portion of the sample holder 8 that is in contact with the sample 5 of the conductive sample holder 20, and the sample 5 is directly bonded to the sample holder 20.

The sample holder 20 has a voltage power source 1 at one end.
6, the other end is connected to the ammeter 17. Figure 4
Indicates the sample holder 8 to which the sample 5 is attached.
Has a shape processed by the ion beam 2. Here, the observation electron beam 22 is incident on the thinned surface in the vertical direction.

FIG. 5 shows the shape of the TEM sample, the incident direction of the ion beam 2 during processing, the incident direction of the electron beam 22 during TEM observation, and parameters. In the case of a TEM sample, its thickness t needs to be reduced to 100 nm or less. At the time of processing, the ion beam 2
It is incident parallel to the width h direction. On the other hand, during TEM observation,
The electron beam 22 is applied to the sample 5 from the direction perpendicular to the ion beam 2.
Incident on.

FIG. 6 is an internal operation block diagram of a portion of the computer 10 according to the embodiment of the present invention. In FIG. 6, the computer 10 has a parameter input unit 3
A parameter storage unit 10A that stores parameters (described later) input from 0, an operation control unit 10B that controls the operations of the blanking control unit 14 and the like, and a calculation unit 10D are provided. Further, the computer 10 uses the ammeter 17
A current calculation unit 10C that calculates a current flowing through the sample 5, a power supply control command unit 10E, and a timer unit 10F are provided.

Next, the operation of the block diagram shown in FIG.
This will be described with reference to the operation flowchart shown in FIG. In step (1), before processing, the parameter input unit 30 to the parameter storage unit 10A of the computer 10 is processed.
In advance, necessary parameters such as width h, length L, thickness t ₀ , and resistivity ρ of each side of the sample 5 are input in advance. Further, the voltage value V applied to the sample 5 and the finally required thickness tw are also input.

In step (2), the arithmetic unit 10D
Is the initial sample volume C0 = h from the above parameters.
・ Calculate L · t0.

In step (3), the arithmetic unit 10D
When the initial value C0 of the sample volume is obtained, the operation control unit 10B is instructed to start the processing, and the operation control unit 10B controls the blanking control unit 14 and the like to start the processing of the sample. To be done. At the same time as the processing of this sample started
The arithmetic unit 10D instructs the clock unit 10F to start timing,
The measurement of the processing time τ is started.

In step (4), the power supply control command unit 10E instructs the voltage power supply control unit 18 to intermittently apply the voltage to the sample 5 being processed according to the command from the calculation unit 10D. As a result, as shown in FIG.
A voltage is intermittently applied to the sample 5 at certain intervals.

In the step (5), when the voltage application is intermittently applied to the sample 5 at a certain fixed interval, the current I1 is applied to the sample 5 by ion irradiation when the voltage V is not applied. A current I2 flows when the voltage is applied. The measured values I1 and I2 are input to the current calculation unit 10C of the computer 10, and the current IV = I2-I1 flowing by the voltage application to the sample 5 is calculated. Then, the calculated current IV is supplied to the arithmetic unit 10D.

In step (6), the arithmetic unit 10D
Calculates the resistance R = V / IV of the sample 5 from the voltage V and the current IV applied to the sample 5.

In step (7), the arithmetic unit 10D
Is the resistance value R and the value t, h, L and ρ stored in the parameter storage unit 10A, and the thickness t of the sample 5 at the time of processing is t =
Calculate Lρ / (hR).

In step (8), the arithmetic unit 10D
Indicates the calculated thickness t of the sample 5 by the parameter storage unit 10.
It is compared with the finally required thickness tw stored in A, and it is determined whether or not the thickness t becomes equal to the thickness tw.

In step (9), when the arithmetic unit 10D determines that t = tw in the above step (8), the arithmetic unit 10D causes the operation control unit 10B to stop the machining so as to stop the machining.
The blanking control unit 14 is instructed. The blanking control unit 14 instructed to stop the processing operates the blanker 6 so that the sample 5 is not irradiated with the ion beam 2. Then, the process proceeds from this step (9) to the next step (10).

In step (10), if it is determined in step (8) that t ≠ tw, processing is continued. Further, the calculation unit 10D determines that the processing volume ΔC at that time is
= C0-C = hL (t0-t) is calculated.

In step (11), the arithmetic unit 10D
Is the machining time τ clocked by the timing unit 10F and the machining volume ΔC = C0− calculated in step (10).
The processing speed ΔC / τ is calculated from C = h · L · (t0-t). At this time, the estimated remaining processing time from the calculated processing speed to the target sample thickness is calculated.

In step (12), the thickness t of the sample 5, the machining time τ, the machining volume ΔC, the machining speed ΔC / τ (predicted remaining machining work time) obtained in the above step are
The data is transmitted from the arithmetic unit 10D to the data display unit 19 and constantly displayed on the data display unit 19.

In step (13), it is judged whether or not the processing thickness of the sample 5 is t = tw and the processing stop is instructed. If the processing stop is instructed, the processing operation is ended. . If the processing stop command has not been issued, the process returns to step (4), and steps (4) to (12) described above are repeated thereafter.

As described above, according to the first embodiment of the present invention, the processed thickness is determined by the change in the resistance value of the sample 5 during the processing by the focused ion beam. To realize a focused ion beam processing device that can automatically detect the sample processing speed, processing amount, and sample remaining thickness with high accuracy, and can create thin film samples for electron microscope observation with high accuracy and efficiency. You can

FIG. 8 is an operation flowchart of the second embodiment of the present invention. In this second embodiment,
The overall configuration and internal block diagram are the same as those in FIG. 1 and FIG. 6, so illustration is omitted.

When the portion where the sample 5 is processed and the portion whose resistance is to be measured of the sample 5 substantially match, the resistance change of the processed portion of the sample 5 can be detected by the operation of FIG. As shown in FIG. 3, when the processed portion of the sample 5 is smaller than the resistance measurement target portion of the sample 5, it becomes difficult to detect the resistance change of the processed portion with high accuracy.

Therefore, according to the second embodiment of the present invention, even when the processed portion of the sample 5 is smaller than the resistance measurement target portion of the sample 5, the resistance change of the processed portion is detected with high accuracy. This is an example that can be done.

That is, in step (1) of FIG.
As a parameter to be input, the length dimension Lw of the processed portion of the sample 5 is input in addition to the parameter input in step (1) of FIG. 7.

Then, in step (2), the volume Cwo = h.Lw.t0 of the processed portion of the processed sample 5 is calculated by the calculation unit 10
Calculated as D.

Subsequently, operations equivalent to steps (3) to (6) in FIG. 7 are performed, and in step (6A), the arithmetic unit 10D determines whether or not the resistance of the sample 5 is the first measurement. Then, if it is the first measurement, the operation proceeds to step (6B), and the calculation unit 10D causes the resistance value R of the non-processed portion of the sample 5
0 = R · (L−Lw) / L is calculated, and the process proceeds to step (6C). If it is not the first measurement of the sample 5 in step (6A), the process proceeds from step (6A) to step (6C).

Then, in step (6C), the arithmetic unit 10D calculates the resistance Rw = R-R0 of the processed portion of the sample 5. Next, in step (7), the arithmetic unit 10D
Is the thickness of the processed portion of sample 5 t = Lw · ρ / (h · Rw)
To calculate. Thereafter, steps (8) to (1 shown in FIG.
The same operation as 3) is executed.

As described above, according to the second embodiment of the present invention, the same height as in the first embodiment can be obtained, and the processed portion of the sample is more than the resistance measurement target portion of the sample. Even if the number is small, there is an effect that the resistance change of the processed portion can be detected with high accuracy.

FIG. 9 is an operation flowchart of the third embodiment of the present invention. In this third embodiment,
The overall configuration and internal block diagram are the same as those in FIG. 1 and FIG. 6, so illustration is omitted.

The voltage applied to the sample 5 is intermittently applied, and the period T of this interruption is large at the beginning of processing of the sample, and at the end of processing, that is, when it approaches the target thickness value. Moreover, if the resistance change of the sample is finely calculated as small, the efficiency of the calculation operation of the resistance and the like can be improved. Therefore, the third embodiment of the present invention is an example in which the intermittent period T of the voltage is changed according to the processing progress state of the sample 5 to improve the efficiency of the calculation operation of the resistance and the like.

That is, in step (1) of FIG.
As the parameters to be input, in addition to the parameters input in step (1) of FIG. 7, a first thickness t1 smaller than the thickness t0 of the sample 5 and smaller than the first thickness t1
A second thickness t2 larger than tw, an initial voltage period T0, a first voltage period T1 shorter than this period T0, and a second voltage period T2 shorter than this period T1 are input.

Then, in steps (2) and (3), the same operations as in steps (2) and (3) of FIG. 7 are performed, and in step (4), the initial voltage cycle T0 is set as the voltage cycle T. Then, the voltage is applied to the sample 5.
Then, the same operation as steps (5) to (12) in FIG. 7 is performed.

If the processing is not stopped in step (13), the process proceeds to step (14), in which the sample thickness t is the first
Of thickness t1 or less, and if not, return to step (4). In step (13), if the sample thickness t is t1 or less, the process proceeds to step (15).

In step (15), it is judged whether or not the sample thickness t is the second thickness t2 or less.
Proceeding to step (16), the first voltage cycle T1 is set as the voltage cycle T, and the procedure returns to step (4).

In step (15), if the sample thickness t is less than or equal to the second thickness t2, the process proceeds to step (17), in which the second voltage cycle T2 is set as the voltage cycle T,
Return to step (4).

As described above, according to the third embodiment of the present invention, the same high level as that of the first embodiment can be obtained, and the intermittent period T of the voltage is changed according to the processing progress state of the sample 5. Therefore, there is an effect that the efficiency of the calculation operation of the resistance and the like can be improved.

In the third embodiment, the equation 1
Assuming that a sample having a thickness of 0 nm is processed to have a thickness of about 0.1 nm, an example of the first thickness t1 is 10 nm and an example of the second thickness t2 is 1 nm.

Further, as a fourth embodiment of the present invention,
In steps (4) and (5) of FIG. 7, the voltage V is not applied intermittently to the sample 5, but is applied continuously,
During this period, the sample is not processed, and the current value I2 at that time is taken as the current flowing through the sample 5. Then, once the measurement of the current flowing through the sample is completed, the sample may be processed, and the current measurement and the sample processing may be alternately performed.

In this case, the computer 10 instructs the blanking control unit 14 to suspend the machining. The blanking controller 14 causes the blanker 6 to move the ion beam 2 out of the sample 5. The detector 11 detects that the ion beam 2 has deviated from the sample 5, and transmits it to the computer 10. In response to the transmission, the computer 10 applies the voltage V to the sample 5 and measures the current flowing through the sample 5, and then the operations of steps (6) to (13) are performed. Also in the fourth embodiment, the same effect as that of the first embodiment can be obtained.

FIG. 10 is a diagram showing an example different from the sample fixing shown in FIGS. 3 and 4. In the example of FIG. 10, the leaf spring 2
4 is an example of the sample holder 8 in which the sample 5 is fixed by using 4 (voltage applying terminal). The sample holder is composed of a conductive leaf spring 24 and a screw 25, and the sample 5 is sandwiched by the leaf spring 24 and fixed by the screw 25. The leaf spring 24 has one end connected to the voltage power supply 16 and the other end connected to the ammeter 17.
FIG. 11 is a side view of the electron beam 22 vertically incident on the thinned surface of the sample 5, and the ion beam 2 at the time of processing is vertically incident on the paper surface.

FIG. 12 is a view showing still another example of fixing a sample. The example of FIG. 12 is an example of fixing to the sample holder 8 when the sample 5 is made of a material that easily expands when a current flows. The sample 5 is mechanically shaped in advance into a shape as shown in the figure using a dicing saw or the like before processing. A notch is made in the sample holder 20, a conductive film 23 is applied to the inner surface of the sample holder 20, and a part of the sample 5 is put in the notch and fixed with a conductive paste 21 at the bottom of the notch.

The convex portion of the sample 5 is sized to come into contact with the inner surface a of the sample holder 20. At this time, the sample holder 20
Before energization, the outer surface b of the convex portion is made narrower than the width of the cut portion so as not to come into contact with the outer surface b. When the sample 5 is expanded by energization, it contacts the outer surface b of the cut and is fixed.

FIG. 13 is a view showing still another example of fixing a sample. The example of FIG. 13 is an example of fixing the sample 5 to the sample holder 8 when the sample 5 is made of a material that is less susceptible to the stress due to the pressure from both ends. As shown in FIG.
Both ends of the are held by conductive springs 26. The conductive spring 26 has one end connected to the voltage power supply 16 and the other end connected to the ammeter 17. Instead of directly contacting the spring 26 with the sample 5, as shown in FIG.
An electrically conductive part 27 may be used in the portion that contacts the sample 5.

In the above example, the processing speed is calculated by dividing the processing volume ΔC by the processing time τ, but the change in sample thickness, that is, (t-tw) /
It is also possible to calculate the processing speed from τ.

[0068]

Since the present invention is constructed as described above, it has the following effects. The current flowing through the sample is detected, the resistance value of the sample is measured, and the progress of the sample processing is judged from the change in the measured resistance value. It is possible to realize a focused ion beam processing apparatus capable of automatically detecting thickness with high accuracy and capable of producing a thin film sample for electron microscope observation with high accuracy and efficiency.

[Brief description of drawings]

FIG. 1 is a basic configuration diagram of a FIB device according to a first embodiment of the present invention.

FIG. 2 is a graph for explaining voltage application to a sample in the example of FIG.

FIG. 3 is an explanatory view of one fixing method of the sample in the example of FIG.

FIG. 4 is an explanatory view of one fixing method of the sample in the example of FIG.

FIG. 5: TEM sample shape, FIB incidence direction, TEM
It is explanatory drawing which shows the relationship and parameter of the incident direction of an electron beam at the time of observation.

6 is a functional block diagram of main parts of a computer 10 in the example of FIG.

7 is an operation flowchart of functional blocks in FIG.

FIG. 8 is an operation flowchart in the second embodiment of the present invention.

FIG. 9 is an operation flowchart in the third embodiment of the present invention.

FIG. 10 is an explanatory diagram of another example of a method for fixing a sample.

11 is an explanatory diagram of the example of FIG.

FIG. 12 is an explanatory diagram of still another example of a method for fixing a sample.

FIG. 13 is an explanatory diagram of still another example of the sample fixing method.

FIG. 14 is a diagram showing a modification of the fixing method shown in FIG.

[Explanation of symbols]

1 ion gun 2 ion beam 3 condenser lens 4 Objective lens 5 samples 6 blanker 7 Deflector 8 sample holder 9 Sample holder drive 10 computers 10A parameter storage 10B operation control unit 10C current calculator 10D operation unit 10E Power control command section 10F clock section 11 Secondary electron detector 12 CRT 13 Detector control unit 14 Blanking control section 15 Deflection signal controller 16 voltage power supply 17 ammeter 18 Voltage power supply controller 19 Data display section 20 Sample holder 21 Conductive paste 22 electron beam 23 Conductive film 24 leaf spring 25 screws 26 Conductive spring 27 Conductive parts 30 Parameter input section

Front page continued (72) Inventor Takeo Ueno 832 Nagakubo, Horiguchi, Hitachinaka City, Ibaraki 2 Hitachi Measurement Engineering Co., Ltd. (56) Reference JP 7-273087 (JP, A) JP 7-35662 (JP, A) JP 7-333120 (JP, A) JP 7-151658 (JP, A) JP 5-266849 (JP, A) JP 61-57803 (JP, A) Kai 58-104167 (JP, A) (58) Fields investigated (Int.Cl. ⁷ , DB name) H01J 37/30 C23F 4/00 G01N 1/28 G01N 1/32 H01J 37/244

Claims (5)

(57) [Claims] 1. A focused ion beam processing apparatus for processing a sample by irradiating a sample surface with ions emitted from an ion gun, and a voltage applying means for intermittently applying a voltage to the sample being processed. , The current flowing through the sample when a voltage is applied by the voltage applying means and the sample when a voltage is not applied.
Detecting a difference between the currents flowing, that this based on the current difference by measuring the resistance of the sample, comprising a processing progress determining means for determining the progress of the processing of the sample from the change in the measured boss was resistance, the Focused ion beam processing equipment. 2. Ions emitted from an ion gun are placed on a sample surface.
The focused ion beam is used to process the sample by irradiating
In the processing device, the voltage applying means for applying a voltage to the sample being processed, the current flowing through the sample is detected, and the resistance value of the sample is measured,
Judging the progress of sample processing from changes in measured resistance
And a machining progress judging means for applying a voltage to the sample by the voltage applying means.
This is done when the sample processing by the focused ion beam of
When processing the sample with the focused ion beam of
The voltage application to the sample by the applying means is stopped, and
It is characterized in that voltage application to the sample is performed alternately.
Focused ion beam processing equipment. 3. The focused ion beam processing apparatus according to claim 1 or 2, wherein the processing progress judging means obtains the volume change amount of the sample due to the change from the resistance value of the sample during the processing of the sample, A focused ion beam processing apparatus, which calculates a processing speed of a sample from a value and judges the progress of processing. 4. The focused ion beam processing apparatus according to claim 1, wherein the processing progress determination means calculates the remaining processing work time from the change in the measured resistance value to the target sample processing state. A focused ion beam processing apparatus, characterized by: 5. A focused ion beam processing apparatus for processing a sample by irradiating the surface of the sample with ions emitted from an ion gun; voltage applying means for applying a voltage to the sample being processed; The parameter storage means for inputting and storing the length, thickness, width, conductivity, and processing target sample thickness, which are the parameters of the sample, the current detection means for detecting the current flowing through the sample, and the sample being processed. and a voltage application period control means for controlling the voltage application period of the above <br/> SL voltage applying means so that intermittent voltage is applied to, based on the current value of the sample detected by the current detection means, the When voltage is applied by the voltage applying means
Sample when current and voltage flowing through the sample are not applied
The difference between the current flowing in the
The parameter storage means and based on <br/> Zui to the stored parameters, to calculate the change in the resistance of the samples, calculated machining progress determining means from the change in resistance is determined the progress of processing of the sample A focused ion beam processing apparatus comprising: