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JP3369633B2 - Conductive paste and ceramic multilayer wiring board using the same - Google Patents

Conductive paste and ceramic multilayer wiring board using the same

Info

Publication number
JP3369633B2
JP3369633B2 JP12797893A JP12797893A JP3369633B2 JP 3369633 B2 JP3369633 B2 JP 3369633B2 JP 12797893 A JP12797893 A JP 12797893A JP 12797893 A JP12797893 A JP 12797893A JP 3369633 B2 JP3369633 B2 JP 3369633B2
Authority
JP
Japan
Prior art keywords
powder
conductor
weight
parts
wiring board
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP12797893A
Other languages
Japanese (ja)
Other versions
JPH06314517A (en
Inventor
修一 川南
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Taiheiyo Cement Corp
Original Assignee
Taiheiyo Cement Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiheiyo Cement Corp filed Critical Taiheiyo Cement Corp
Priority to JP12797893A priority Critical patent/JP3369633B2/en
Publication of JPH06314517A publication Critical patent/JPH06314517A/en
Application granted granted Critical
Publication of JP3369633B2 publication Critical patent/JP3369633B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/09Use of materials for the conductive, e.g. metallic pattern
    • H05K1/092Dispersed materials, e.g. conductive pastes or inks
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/40Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/4038Through-connections; Vertical interconnect access [VIA] connections
    • H05K3/4053Through-connections; Vertical interconnect access [VIA] connections by thick-film techniques
    • H05K3/4061Through-connections; Vertical interconnect access [VIA] connections by thick-film techniques for via connections in inorganic insulating substrates
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/46Manufacturing multilayer circuits
    • H05K3/4611Manufacturing multilayer circuits by laminating two or more circuit boards
    • H05K3/4626Manufacturing multilayer circuits by laminating two or more circuit boards characterised by the insulating layers or materials
    • H05K3/4629Manufacturing multilayer circuits by laminating two or more circuit boards characterised by the insulating layers or materials laminating inorganic sheets comprising printed circuits, e.g. green ceramic sheets
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/46Manufacturing multilayer circuits
    • H05K3/4644Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
    • H05K3/4673Application methods or materials of intermediate insulating layers not specially adapted to any one of the previous methods of adding a circuit layer
    • H05K3/4676Single layer compositions

Landscapes

  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
  • Conductive Materials (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、導体ペ−スト及びそれ
を用いたセラミック多層配線基板に関し、主として950
℃以下の低温で焼成されるセラミックの多層配線基板に
用いる導体ペ−スト及びそれを用いた多層配線基板に関
する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a conductor paste and a ceramic multilayer wiring board using the conductor paste, mainly 950
The present invention relates to a conductor paste used for a ceramic multilayer wiring board which is fired at a low temperature of ℃ or less and a multilayer wiring board using the same.

【0002】[0002]

【従来の技術】電子機器に用いられる配線基板には、高
速化、高密度化などの要求からセラミックの多層基板が
使用されるようになってきている。このような多層基板
には、層間の導通をとるためにヴイアが形成されてい
る。該ヴイアは、一般にセラミックのグリ−ンシ−トに
貫通穴を開け、導電材を充填し、積層、焼成することに
よって形成される。
2. Description of the Related Art As a wiring board used in electronic equipment, a ceramic multilayer board has come to be used due to demands for higher speed and higher density. Vias are formed in such a multilayer substrate to establish conduction between the layers. The via is generally formed by forming a through hole in a ceramic green sheet, filling a conductive material, laminating and firing.

【0003】セラミックの多層配線基板には、主として
アルミナが用いられている。このアルミナ基板にはタン
グステン等の高融点の配線材料が用いられている。しか
し、近年の高速化、高密度化等の要求から銅や銀、金を
導体とする低温で焼成できる基板が開発され、利用され
つつある。この低温焼成多層セラミック基板の内部導体
としては、銅、銀系の導体、金等が用いられ、一方、そ
の表面導体としては、銅、銀−パラジウム、銀−白金、
金等が用いられている。
Alumina is mainly used for the ceramic multilayer wiring board. A high melting point wiring material such as tungsten is used for the alumina substrate. However, in recent years, a substrate which can be fired at a low temperature using copper, silver, or gold as a conductor has been developed and is being used in response to the demand for higher speed and higher density. Copper, a silver-based conductor, gold, etc. are used as the internal conductor of this low-temperature fired multilayer ceramic substrate, while copper, silver-palladium, silver-platinum, and the like are used as its surface conductor.
Gold or the like is used.

【0004】[0004]

【発明が解決しようとする課題】ところで、低温焼成多
層セラミック基板において、その内部に銀を、表面に銀
−パラジウムの導体を用いる場合、この内部配線とヴイ
ア又はヴイアと表面のいずれかで銀と銀−パラジウムを
接続する必要がある。
By the way, in a low temperature fired multi-layer ceramic substrate, when silver is used inside and a conductor of silver-palladium is used on the surface, silver is formed on either the internal wiring and the via or the via and the surface. It is necessary to connect silver-palladium.

【0005】この接続部分では、銀とパラジウムとの原
子の拡散速度が異なることにより、銀中に空隙を生ずる
などの問題があった。そのため、信頼性の高い接続を得
るのが困難であり、特に表面導体を焼き付けた後抵抗や
金導体の焼成を行うと、接続状態が悪化するという問題
があった。
In this connection portion, there was a problem that voids were generated in silver due to the difference in diffusion rate of atoms of silver and palladium. Therefore, it is difficult to obtain a highly reliable connection, and there is a problem that the connection state is deteriorated particularly when the surface conductor is baked and then the resistance or the gold conductor is baked.

【0006】本発明は、上記問題点を解消することを技
術的課題とし、高信頼性の導体接続が可能な導体ペ−ス
ト及びそれを用いたセラミック多層配線基板を提供する
ことを目的とする。
SUMMARY OF THE INVENTION It is an object of the present invention to solve the above problems, and an object of the present invention is to provide a conductor paste capable of highly reliable conductor connection and a ceramic multilayer wiring board using the same. .

【0007】[0007]

【課題を解決するための手段】本発明は、ヴイア用の導
体ペ−ストとして、Agに特定量のPd、Au及び/又はPt、
結晶化ガラス及びペ−スト化に必要な有機ビヒクルを適
量含むペ−ストを用いることを特徴とする。これによ
り、Agの内部配線とAg-Pdの表面導体とを接続してなる
セラミック多層配線基板において、ヴイアと表面導体と
の接続を確実なものとすることができ、また、内部配線
の導体との接続も悪くすることがなく、その結果、高い
信頼性の導体の接続を可能とするものである。
DISCLOSURE OF THE INVENTION The present invention provides a conductor paste for vias, in which a specific amount of Pd, Au and / or Pt is added to Ag.
It is characterized in that a paste containing an appropriate amount of crystallized glass and an organic vehicle necessary for forming a paste is used. As a result, in the ceramic multilayer wiring board formed by connecting the Ag internal wiring and the Ag-Pd surface conductor, the connection between the via and the surface conductor can be ensured, and the internal wiring conductor and The connection of the conductors does not deteriorate, and as a result, it is possible to connect the conductors with high reliability.

【0008】即ち、本発明は、「93〜97重量部のAg
、0.5〜2重量部のPd粉末、残りの成分がAu粉末及び/
又はPt粉末(ただし、Au粉末は0〜5重量部、Pt粉末は0
〜3重量部)からなり、 つ、Pd粉末、Au粉末及びPt粉
末の合計が3〜7重量部であり、さらに0.3〜3重量部(外
割)の結晶化ガラス及び適量の有機ビヒクルからなるこ
とを特徴とする導体ペ−スト。」を要旨とし、また、
「Agの内部配線とAg-Pdの表面導体とを接続してなるセ
ラミック多層配線基板において、前記導体ペ−ストを、
上記Agの内部配線とAg-Pdの表面導体とを接続するヴイ
アに用いることを特徴とするセラミック多層配線基
板。」を要旨とする。
That is, the present invention provides "93 to 97 parts by weight of Ag powder.
End, Pd powder 0.5-2 parts by weight, the remaining ingredients Au powder and /
Or Pt powder (however, Au powder is 0-5 parts by weight, Pt powder is 0
It consists to 3 parts by weight), One or, Pd powder, Au powder and Pt powder
A total of 3 to 7 parts by weight of powder, and 0.3 to 3 parts by weight (outer percentage) of crystallized glass and an appropriate amount of organic vehicle, a conductor paste. Is the gist, and also
In the ceramic multilayer wiring substrate formed by connecting the surface conductors of the internal wiring and Ag-Pd of "Ag, the conductor pair - the strike,
A ceramic multilayer wiring board characterized by being used for a via connecting the Ag internal wiring and a surface conductor of Ag-Pd. Is the gist.

【0009】[0009]

【作用】上記した本発明に係るヴイア用の導体ペ−スト
によれば、このヴイア用導体としてAgの他にPdを、さら
にAu及び/又はPtを加えることによって、表面のAg-Pd
導体とヴイア導体とが接する部分での金属原子の移動速
度の差が小さくする作用が生じる。そのため、表面導体
からヴイア導体方向への金属原子の拡散量と逆方向の拡
散量との差が少なくなり、ヴイア導体の周辺に発生する
空洞をなくすことができ、ヴイアと表面導体との接続を
確実なものとすることができる。
According to the conductor paste for vias according to the present invention described above, by adding Pd in addition to Ag and further Au and / or Pt as the conductor for vias, the surface Ag-Pd
The effect of reducing the difference in the moving speed of the metal atom at the portion where the conductor and the via conductor contact each other occurs. Therefore, the difference between the amount of diffusion of metal atoms from the surface conductor toward the via conductor and the amount of diffusion in the opposite direction can be reduced, and voids generated around the via conductor can be eliminated, and the connection between the via and the surface conductor can be eliminated. It can be assured.

【0010】その上、このヴイア導体を用いれば、内部
の導体との接続も悪くすることがないので、高い信頼性
の導体の接続が可能となるものである。また、上記した
本発明の導体ペ−ストによれば、結晶化ガラスを配合す
ることによりセッタ−への付着が生じることがなく、ク
ラックの発生もない作用が生じる。
In addition, if this via conductor is used, the connection with the internal conductor is not deteriorated, so that it is possible to connect the conductor with high reliability. Further, according to the above-mentioned conductor paste of the present invention, the addition of the crystallized glass does not cause adhesion to the setter and does not cause cracks.

【0011】以下、本発明を詳細に説明する。表面のAg
-Pd導体は、通常Pd比率が10〜20wt%のものが用いられ
ている。これは、10wt%より少ないと、エレクトロマイ
グレ−ションの発生する確率が高くなり、一方、20wt%
より多いと高価になるばかりでなく、シ−ト抵抗も上昇
するからである。
The present invention will be described in detail below. Surface Ag
-Pd conductors with a Pd ratio of 10 to 20 wt% are usually used. If it is less than 10 wt%, the probability of electromigration occurring is high, while on the other hand, 20 wt%
This is because not only is the cost higher, but the sheet resistance also increases.

【0012】本発明において、このAg-Pdからなる表面
導体と接するヴイア導体は、Agを主成分とし、Pdを0.5
〜2wt%含み、Pd、Au、Ptの合計を3〜7wt%含まなけれ
ばならない。Pdは、表面のAg-Pd導体との接続の改良に
有効なため、0.5wt%以上含む必要がある。しかし、2wt
%を超える量では内部のAg導体との接続が悪くなるの
で、0.5〜2wt%の範囲にあることが望ましい。
In the present invention, the via conductor in contact with the surface conductor made of Ag-Pd has Ag as a main component and Pd of 0.5 or less.
~ 2 wt% must be included, and the total of Pd, Au and Pt must be 3 to 7 wt%. Pd is effective for improving the connection with the Ag-Pd conductor on the surface, so it must be contained in an amount of 0.5 wt% or more. But 2wt
%, The connection with the Ag conductor inside becomes poor, so it is desirable that the amount be in the range of 0.5 to 2 wt%.

【0013】Au及び/又はPtの添加も表面のAg-Pd導体
との接続を改良できる。Pdの他にAu及び/又はPtを加え
た場合には、内部のAg導体との接続をあまり悪くしない
で表面との接続を改善することができるので、Au、Ptの
いずれか又は両方を1wt%以上加えることが好ましい。P
d、Au、Ptの合計が3wt%より少ないと、表面のAg-Pdと
の接続が悪くなり、逆にこれらの合計が7wt%を超える
場合には、内部のAg導体との接続が悪くなるので、好ま
しくない。また、Au、Ptはそれぞれ5wt%以下、3wt%以
下でないと、内部配線のAg導体との接続が悪くなるの
で、好ましくない。
The addition of Au and / or Pt can also improve the connection with the surface Ag-Pd conductor. When Au and / or Pt is added in addition to Pd, the connection with the surface can be improved without making the connection with the Ag conductor inside much worse, so either or both of Au and Pt can be added to 1 wt. % Or more is preferably added. P
If the sum of d, Au, and Pt is less than 3 wt%, the connection with Ag-Pd on the surface will be bad, and conversely, if the total of these exceeds 7 wt%, the connection with the internal Ag conductor will be bad. Therefore, it is not preferable. Further, unless Au and Pt are 5 wt% or less and 3 wt% or less, respectively, the connection of the internal wiring with the Ag conductor is deteriorated, which is not preferable.

【0014】本発明において、ガラスは、結晶化するも
のが好ましい。それは、再焼成による軟化がなく、基板
との密着性に優れるからであり、また、焼成時にアルミ
ナ等のセッタ−に付着しにくいからである。この結晶化
ガラスとしては、850℃の焼成で結晶を析出するような
組成のものであれば、いずれも使用することができる。
これを例示すれば、SiO2 33%、Al2O3 18%、B2O3 2
%、ZnO 17%、CaO 17%、TiO2 13%の組成からなるガ
ラス(850℃の焼成で結晶を析出する組成のガラス)など
を挙げることができる。
In the present invention, the glass is preferably one that crystallizes. This is because there is no softening due to re-baking and the adhesion to the substrate is excellent, and it is difficult to adhere to a setter such as alumina during baking. Any crystallized glass can be used as long as it has a composition capable of precipitating crystals by firing at 850 ° C.
For example, SiO 2 33%, Al 2 O 3 18%, B 2 O 3 2
%, ZnO 17%, CaO 17%, and TiO 2 13% (glass having a composition that precipitates crystals by firing at 850 ° C.).

【0015】結晶化ガラスの量が0.3wt%未満の場合に
は、アルミナ等焼成時に用いるセッタ−に付着すること
があり、また、ヴイア導体と基板との密着性が良くない
ので空隙を生じることがあり、好ましくない。逆に3%
を超える量では、ヴイア導体の周辺の基板にクラックを
生じることがあるので、本発明では0.3〜3重量部(外
割)の結晶化ガラスを用いるのが好ましい。
If the amount of the crystallized glass is less than 0.3 wt%, it may adhere to the setter used for firing such as alumina, and the adhesion between the via conductor and the substrate is not good, so that voids are generated. Is not preferable. Conversely, 3%
If the amount exceeds 0.1, cracks may occur in the substrate around the via conductor, so in the present invention, it is preferable to use 0.3 to 3 parts by weight (outer ratio) of crystallized glass.

【0016】本発明において、金属成分として使用する
原材料のうち、Ag粉末としては、球形のAg粉末を使用す
るのが好ましい。球形のAg粉末は、吸油量が小さいため
ペ−スト化しやすく、しかも固形分や粘度の調整が容易
であるからである。このような球形のAg粉末の粒径とし
ては、0.5〜2μmが好ましい。
In the present invention, among the raw materials used as the metal component, it is preferable to use spherical Ag powder as the Ag powder. This is because the spherical Ag powder has a small oil absorption amount and is easily formed into a paste, and the solid content and the viscosity are easily adjusted. The particle size of such spherical Ag powder is preferably 0.5 to 2 μm.

【0017】また、本発明において、Pd粉末としては、
同じく球形であって、その粒径:0.2〜1μmが好まし
い。一方、Au粉末は粒径:0.2〜1.5μmが、また、Pt粉
末は粒径:0.1〜1.5μmのものが適している。
Further, in the present invention, as the Pd powder,
It is also spherical, and its particle diameter is preferably 0.2 to 1 μm. On the other hand, Au powder having a particle size of 0.2 to 1.5 μm is suitable, and Pt powder having a particle size of 0.1 to 1.5 μm is suitable.

【0018】有機ビヒクルについては、ペ−スト化で
き、充填できるような粘度特性が得られるものならば、
いずれも使用することができる。これを例示すれば、エ
チルセルロ−ス、メタクリレ−ト樹脂などを高沸点の溶
剤(例えばテルピネオ−ル、ブチルカルビノ−ル、ジブ
チルフタレ−トなどの溶剤)に10〜20%溶解したものを
挙げることができる。
With respect to the organic vehicle, as long as it can be formed into a paste and has viscosity characteristics such that it can be filled,
Either can be used. For example, ethyl cellulose, methacrylate resin and the like having a high boiling point solvent (e.g., terpineol, butylcarbinol, dibutylphthalate, etc.) dissolved in 10 to 20% can be mentioned. .

【0019】また、有機ビヒクルの量は、金属成分に対
して10〜20%の範囲にあることが好ましい。さらに、本
発明において、必要に応じ分散剤や粘度調整剤などを添
加することも有効であり、これも本発明に包含されるも
のである。
The amount of organic vehicle is preferably in the range of 10 to 20% with respect to the metal component. Furthermore, in the present invention, it is also effective to add a dispersant, a viscosity modifier, etc., if necessary, and this is also included in the present invention.

【0020】本発明の導体ペ−ストは、表面にAg-Pdの
導体を、内部配線にAgを用いる場合、これらを接続する
ヴイア導体として用いることができる。また、内部配線
としてAg-Pd導体とAg導体を併用する場合、この接続用
ヴイアとしても使用できる。
The conductor paste of the present invention can be used as a via conductor for connecting Ag-Pd conductors on the surface and Ag, when Ag is used for the internal wiring. Also, when Ag-Pd conductor and Ag conductor are used together as internal wiring, it can be used as a connecting via.

【0021】[0021]

【実施例】以下、本発明の実施例を比較例と共に挙げ、
本発明をより詳細に説明する。
EXAMPLES Examples of the present invention will be given below together with comparative examples.
The present invention will be described in more detail.

【0022】(実施例1〜7) (1) 原材料 実施例1〜7において、次の原材料を使用した。 ・銀(Ag)粉末:三井金属鉱業社製の粒径約1μmで球形
に近い粉末。 ・パラジウム(Pd)粉末:住友金属鉱山社製の粒径約0.5
μmの粉末。 ・金(Au)粉末:田中貴金属インタ−ナショナル社製の粒
径約1μmの粉末。 ・白金(Pt)粉末:田中貴金属工業社製の粒径約1μmの
粉末。 ・結晶化ガラス:SiO2 33%、Al2O3 18%、B2O3 2%、Z
nO 17%、CaO 17%、TiO2 13%の組成からなるガラス(8
50℃の焼成で結晶を析出する組成のガラス)。 ・有機ビヒクル:エチルセルロ−スを15%ジブチルフタ
レ−トに溶解した有機ビヒクル。
(Examples 1 to 7) (1) Raw materials In Examples 1 to 7, the following raw materials were used. -Silver (Ag) powder: A powder made by Mitsui Mining & Smelting Co., Ltd. having a particle size of about 1 μm and a nearly spherical shape.・ Palladium (Pd) powder: Particle size of about 0.5 manufactured by Sumitomo Metal Mining Co., Ltd.
μm powder. -Gold (Au) powder: A powder made by Tanaka Kikinzoku International Co., Ltd. with a particle size of about 1 μm. -Platinum (Pt) powder: A powder made by Tanaka Kikinzoku Kogyo Co., Ltd. with a particle size of about 1 μm. Crystallized glass: SiO 2 33%, Al 2 O 3 18%, B 2 O 3 2%, Z
Glass composed of 17% nO, 17% CaO, and 13% TiO 2 (8
Glass having a composition in which crystals are precipitated by firing at 50 ° C). -Organic vehicle: An organic vehicle prepared by dissolving ethyl cellulose in 15% dibutyl phthalate.

【0023】(2) 導体ペ−ストの調製 上記銀(Ag)粉末、パラジウム(Pd)粉末、金(Au)粉末、白
金(Pt)粉末、結晶化ガラスをそれぞれ表1に示す割合
(重量部)で混合し、さらに適量の有機ビヒクルを混合
した後、三本ロ−ルミルで混練し、導体ペ−ストを調製
した。
(2) Preparation of conductor paste The above-mentioned silver (Ag) powder, palladium (Pd) powder, gold (Au) powder, platinum (Pt) powder, and crystallized glass are shown in Table 1 in proportions (parts by weight). ), And an appropriate amount of organic vehicle, and then kneaded with a three-roll mill to prepare a conductor paste.

【0024】(3) 多層セラミック基板の製造 アルミナ粉末:50重量%とホウケイ酸亜鉛ガラス:50重
量%とを混合し、これに有機バインダ−としてアクリル
樹脂を加えてスラリ−化し、該スラリ−をドクタ−ブレ
−ド法によりシ−ト状(厚み:約0.2mm)に成形し、
セラミックグリ−ンシ−トを得た。
(3) Production of multilayer ceramic substrate Alumina powder: 50% by weight and zinc borosilicate glass: 50% by weight are mixed, and an acrylic resin is added as an organic binder to form a slurry, and the slurry is prepared. Molded into a sheet (thickness: about 0.2 mm) by the doctor blade method,
A ceramic green sheet was obtained.

【0025】このグリ−ンシ−トにNCパンチングによ
り、0.15mmのヴイア用の穴を開けた。次に、この穴に
前記(2)のヴイア用の導体ペ−ストを印刷により充填
し、さらに、この上に内部の配線パタ−ンを印刷した。
熱圧着後、400℃で脱バインダ−し、850℃で焼成して多
層セラミック基板を得た。得られた基板に銀−パラジウ
ム(Pd比率20%)ペ−ストを印刷し、850℃で焼成した。
さらに、この基板を、抵抗や金導体等の焼成を想定し
て、850℃で3回再焼成した。
This green sheet was punched with a 0.15 mm via hole by NC punching. Next, this hole was filled with the conductor paste for vias described in (2) by printing, and an internal wiring pattern was further printed on this.
After thermocompression bonding, the binder was removed at 400 ° C. and baked at 850 ° C. to obtain a multilayer ceramic substrate. Silver-palladium (Pd ratio 20%) paste was printed on the obtained substrate and baked at 850 ° C.
Furthermore, this substrate was re-fired three times at 850 ° C. assuming firing of resistors and gold conductors.

【0026】(4) 評価 導通の評価は、図1に示すようなパタ−ンの基板を作製
し、テスタ−にて導通を調べた。この基板の表裏それぞ
れに96箇所の導通箇所(測定箇所)を設け、各実施例ご
とに50基板作製し、それぞれ合計9600箇所の導通を調査
した。その結果を表1に示す。
(4) Evaluation To evaluate the continuity, a pattern substrate as shown in FIG. 1 was prepared and the continuity was examined by a tester. 96 conduction points (measurement points) were provided on each of the front and back sides of this substrate, 50 substrates were prepared for each example, and a total of 9600 conduction points were investigated. The results are shown in Table 1.

【0027】なお、図1は、導通評価用の基板の断面の
模式図であり、1はセラミック層、2はヴイア、3は内
部配線、4は表面導体をそれぞれ示す。上記した導通の
調査は、図1において、端子A−端子B間(表)及び端子
C−端子D間(裏)の導通をテスタ−にて調べたものであ
る。
FIG. 1 is a schematic cross-sectional view of a substrate for evaluating continuity, where 1 is a ceramic layer, 2 is a via, 3 is an internal wiring, and 4 is a surface conductor. The above-mentioned investigation of the continuity is conducted by examining the continuity between the terminal A and the terminal B (front) and between the terminal C and the terminal D (back) in FIG.

【0028】(比較例1〜6)なお、比較のため、実施
例と同一の原材料を用い、表1に示す割合(重量部)の
導体ペ−ストを実施例と同様に調製した。得られた導体
ペ−ストに対して、同じく実施例と同様に評価を行っ
た。その結果を表1に付記した。比較例1、2、4で
は、断面観察の結果、表面導体とヴイアの接続部付近で
空洞が認められ、また、比較例3では内部配線とヴイア
の接続部で空洞が観察された。
(Comparative Examples 1 to 6) For comparison, the same raw materials as those in Examples were used, and conductor pastes having the proportions (parts by weight) shown in Table 1 were prepared in the same manner as in Examples. The obtained conductor paste was evaluated in the same manner as in the example. The results are shown in Table 1. In Comparative Examples 1, 2, and 4, as a result of cross-sectional observation, cavities were observed near the connection between the surface conductor and the via, and in Comparative Example 3, cavities were observed at the connection between the internal wiring and the via.

【0029】[0029]

【表1】 [Table 1]

【0030】Pd配合の有無については、表1から明らか
なように、実施例1〜7においてPdを配合することによ
り表面のAg-Pd導体との接続性が改善され、導通不良が
皆無であった。これに対して、Pdを配合しない比較例1
(Ag:100重量部のペ−スト)では、15箇所の導通不良箇
所が発生した。また、このPdの配合量については、比較
例3(Pd量:3重量部)でみられるように、Pd量が多いと
内部配線との接続が逆に悪くなることが認められ、従っ
て、本発明では、実施例1〜7のようにPd量:0.5〜2wt
%配合するのが好ましい。
Regarding the presence or absence of Pd blending, as is clear from Table 1, by blending Pd in Examples 1 to 7, the connectivity with the Ag-Pd conductor on the surface was improved and there was no conduction failure. It was On the other hand, Comparative Example 1 containing no Pd
(Ag: 100 parts by weight of paste), there were 15 conduction failure points. Regarding the amount of Pd compounded, as seen in Comparative Example 3 (Pd amount: 3 parts by weight), it was observed that when the amount of Pd was large, the connection with the internal wiring was adversely affected. In the invention, as in Examples 1 to 7, Pd amount: 0.5 to 2 wt
% Is preferable.

【0031】その上、比較例2との対比から明らかなよ
うに、本発明では、Pd量を0.5〜2wt%とし、さらにAu及
び/又はPtを添加することにより、内部配線との接続を
悪化しないで表面導体との接続を改善する効果があるこ
とが認められた。しかし、Auは5wt%を超えると、実施
例6と比較例5との対比から明らかなように、やはり内
部配線との接続性が悪くなることが認められた。また、
Ptは3wt%を超えると、実施例7と比較例6との対比か
ら明らかなように、同じく内部配線との接続が悪化する
ことが認められた。
Moreover, as is clear from comparison with Comparative Example 2, in the present invention, the amount of Pd is set to 0.5 to 2 wt%, and the addition of Au and / or Pt further deteriorates the connection with the internal wiring. It was confirmed that the effect of improving the connection with the surface conductor was obtained without doing so. However, when Au exceeds 5 wt%, as is clear from the comparison between Example 6 and Comparative Example 5, it was recognized that the connectivity with the internal wiring also deteriorates. Also,
When Pt exceeds 3 wt%, it was confirmed that the connection with the internal wiring also deteriorates, as is clear from the comparison between Example 7 and Comparative Example 6.

【0032】(実施例8、9)セッタ−への付着及びク
ラック発生の有無を調査するため、表2に示す配合割合
の導体ペ−ストを調製した。(使用原材料は前記と同一
のものを使用した。)この導体ペ−ストを用いたものに
対して、 (1) セッタ−への付着の有無として、アルミナセッタ−
を実体顕微鏡で観察した。 (2) クラック発生の有無として、試料をエポキシ樹脂に
包埋後、断面が見えるように研磨し、顕微鏡にて観察し
た。 この(1)及び(2)の観察結果を表2に示す。
(Embodiments 8 and 9) In order to investigate whether or not there was adhesion to a setter and the occurrence of cracks, conductor pastes having the compounding ratios shown in Table 2 were prepared. (The raw materials used were the same as above.) Compared with the one using this conductor paste, (1) As for the presence or absence of adhesion to the setter, the alumina setter
Was observed with a stereomicroscope. (2) For the presence or absence of cracks, the sample was embedded in epoxy resin, polished so that the cross section could be seen, and observed with a microscope. Table 2 shows the observation results of (1) and (2).

【0033】(比較例7、8)なお、比較のため、結晶
化ガラス無添加(比較例7)及び5重量部添加(比較例8)
の導体ペ−ストを実施例8、9と同様に調製した。この
導体ペ−ストを用いたものに対して、上記(1)及び(2)の
観察をした。その観察結果を表2に付記した。
(Comparative Examples 7 and 8) For comparison, crystallized glass was not added (Comparative Example 7) and 5 parts by weight was added (Comparative Example 8).
The conductor paste of Example 1 was prepared in the same manner as in Examples 8 and 9. The above (1) and (2) were observed for the one using this conductor paste. The observation results are shown in Table 2.

【0034】[0034]

【表2】 [Table 2]

【0035】表2から明らかなように、結晶化ガラス無
添加の比較例7では、クラックが発生しないけれども、
セッタ−への付着が認められた。また、この結晶化ガラ
スを5重量部配合した比較例8では、逆にセッタ−への
付着が認められないものの、クラックが発生した。これ
に対して、実施例8、9でみられるように、結晶化ガラ
スの配合量が0.3〜3wt%でセッタ−への付着及びクラッ
ク発生が認められなかった。
As is clear from Table 2, in Comparative Example 7 in which crystallized glass was not added, cracks did not occur, but
Adhesion to the setter was recognized. Further, in Comparative Example 8 in which 5 parts by weight of this crystallized glass was blended, conversely, although adhesion to the setter was not observed, cracks occurred. On the other hand, as seen in Examples 8 and 9, when the compounding amount of the crystallized glass was 0.3 to 3 wt%, neither adhesion to the setter nor crack generation was observed.

【0036】[0036]

【発明の効果】以上のとおり、本発明にかかる導体ペ−
ストをヴイア用の導体ペ−ストとして用いることによ
り、Ag導体(内部配線)とAg-Pd導体(表面導体)とを
良好に接続することができる効果が生じる。従って、内
部配線に低抵抗のAg導体を使用した、接続信頼性に優れ
たセラミック多層基板を提供することができる。また、
本発明にかかる導体ペ−ストによれば、結晶化ガラスを
配合することによりセッタ−への付着が生じることがな
く、しかもヴイア導体周辺の基板にクラックが発生する
こともない効果が生じる。
As described above, the conductor sheet according to the present invention is used.
By using the strike as the conductor paste for vias, the effect that the Ag conductor (internal wiring) and the Ag-Pd conductor (surface conductor) can be well connected is produced. Therefore, it is possible to provide a ceramic multilayer substrate which uses a low-resistance Ag conductor for the internal wiring and has excellent connection reliability. Also,
According to the conductor paste of the present invention, the addition of the crystallized glass does not cause adhesion to the setter, and further, the effect that the substrate around the via conductor is not cracked.

【図面の簡単な説明】[Brief description of drawings]

【図1】導通評価用の基板の断面模式図。FIG. 1 is a schematic sectional view of a substrate for evaluating continuity.

【符号の説明】[Explanation of symbols]

1 セラミック層 2 ヴイア 3 内部配線 4 表面導体 1 Ceramic layer 2 via 3 Internal wiring 4 surface conductor

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 FI H05K 3/46 H05K 3/46 S (58)調査した分野(Int.Cl.7,DB名) H01B 1/00 - 1/24 CA(STN) REGISTRY(STN)─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. 7 Identification code FI H05K 3/46 H05K 3/46 S (58) Fields investigated (Int.Cl. 7 , DB name) H01B 1/00-1 / 24 CA (STN) REGISTRY (STN)

Claims (2)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 93〜97重量部のAg粉末、0.5〜2重量部の
Pd粉末、残りの成分がAu粉末及び/又はPt粉末(ただ
し、Au粉末は0〜5重量部、Pt粉末は0〜3重量部)からな
り、かつ、Pd粉末、Au粉末及びPt粉末の合計が3〜7重量
部であり、さらに0.3〜3重量部(外割)の結晶化ガラス
及び適量の有機ビヒクルからなることを特徴とする導体
ペ−スト。
1. 93 to 97 parts by weight of Ag powder , 0.5 to 2 parts by weight of
Pd powder , the remaining components are Au powder and / or Pt powder (however, Au powder is 0 to 5 parts by weight, Pt powder is 0 to 3 parts by weight), and the total of Pd powder, Au powder and Pt powder Has 3 to 7 weight
Parts, further comprising 0.3 to 3 parts by weight (outer ratio) of crystallized glass and an appropriate amount of organic vehicle.
【請求項2】 Agの内部配線とAg-Pdの表面導体とを接
続してなるセラミック多層配線基板において、93〜97重
量部のAg粉末、0.5〜2重量部のPd粉末、残りの成分がAu
粉末及び/又はPt粉末(ただし、Au粉末は0〜5重量部、
Pt粉末は0〜3重量部)からなり、かつ、Pd粉末、Au粉末
及びPt粉末の合計が3〜7重量部であり、さらに0.3〜3重
量部(外割)の結晶化ガラス及び適量の有機ビヒクルか
らなる導体ペ−ストを、上記Agの内部配線とAg-Pdの表
面導体とを接続するヴイアに用いることを特徴とするセ
ラミック多層配線基板。
2. In a ceramic multilayer wiring board formed by connecting internal wiring of Ag and surface conductor of Ag-Pd, 93 to 97 parts by weight of Ag powder , 0.5 to 2 parts by weight of Pd powder , and the remaining components are Au
Powder and / or Pt powder (however, Au powder is 0 to 5 parts by weight,
Pt powder is 0 to 3 parts by weight), and Pd powder and Au powder.
The total amount of Pt powder is 3 to 7 parts by weight, and a conductor paste composed of 0.3 to 3 parts by weight (outer percentage) of crystallized glass and an appropriate amount of organic vehicle is used for the internal wiring of Ag and Ag-Pd. A ceramic multilayer wiring board characterized by being used for a via connecting to a surface conductor of.
JP12797893A 1993-05-01 1993-05-01 Conductive paste and ceramic multilayer wiring board using the same Expired - Fee Related JP3369633B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12797893A JP3369633B2 (en) 1993-05-01 1993-05-01 Conductive paste and ceramic multilayer wiring board using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12797893A JP3369633B2 (en) 1993-05-01 1993-05-01 Conductive paste and ceramic multilayer wiring board using the same

Publications (2)

Publication Number Publication Date
JPH06314517A JPH06314517A (en) 1994-11-08
JP3369633B2 true JP3369633B2 (en) 2003-01-20

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ID=14973407

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Country Link
JP (1) JP3369633B2 (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4247863B2 (en) * 1999-07-12 2009-04-02 ソニー株式会社 Metal materials for electronic components, wiring materials for electronic components, electrode materials for electronic components, electronic components, electronic equipment, processing methods for metal materials, and electro-optical components
KR100393592B1 (en) * 2001-07-05 2003-08-02 엘지전자 주식회사 A conductive paste and intergarated circuit device using conductive paste
JP4507012B2 (en) 2006-01-23 2010-07-21 日立金属株式会社 Multilayer ceramic substrate
CN109628790A (en) * 2018-12-18 2019-04-16 山东赢耐鑫电子科技有限公司 A kind of high-purity gold and silver pallas bonding wire and preparation method thereof

Also Published As

Publication number Publication date
JPH06314517A (en) 1994-11-08

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