JP3355881B2 - Solid-state imaging device and manufacturing method thereof - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention
The present invention relates to a solid-state imaging device applicable to an area sensor or the like using a charge coupled device (Charge Coupled Device).

[0002]

2. Description of the Related Art Heretofore, ultra-small solid-state imaging devices have been used for applications such as endoscopes. FIG. 18 to FIG.
1 illustrates a configuration of a conventional solid-state imaging device. As shown in the figure, in the conventional solid-state imaging device, the imaging region 2
0 are formed on both sides of the solid-state imaging device chip 21 on which connection electrode pads 22 and bumps 23 are provided. TAB (Tape Automated) is provided for each bump 23.
Bonding) The lead wire 25 of the tape 24 is connected. Then, a transparent cap 26 made of, for example, glass is placed on the solid-state imaging device chip 21, and an adhesive 27 made of a transparent resin is filled between the solid-state imaging device chip 21 and the cap 26 to perform packaging. I'm trying to do it. In this case, the solid-state imaging device chip 21
And filling the space between the cap 26 with the adhesive 27 is as follows.
This is to prevent intrusion of moisture, dust, and the like, and to ensure the reliability of the solid-state imaging device.

[0003]

As shown in FIG. 20, an on-chip micro lens 29 for condensing light is generally provided on the upper surface of a photodiode 28 such as a CCD area sensor in order to improve sensitivity. For example, it is formed using an organic material having a refractive index of 1.5 to 1.6.

However, in the case of the conventional example having such a configuration, the adhesive 27 is in close contact with the upper surface of the on-chip micro lens 29, so that the resin of the adhesive 27 and the on-chip micro lens 29 are formed. The difference in the refractive index of the organic material is smaller than that of air, and as a result,
Although the light condensing rate is reduced and the size can be reduced, there is a problem that sensitivity and smear characteristics are deteriorated compared to a hollow structure package using, for example, ceramics.

The present invention has been made in consideration of the above-mentioned problems of the conventional technology, and provides a solid-state image pickup device capable of easily achieving miniaturization while maintaining image pickup characteristics and reliability, and a method of manufacturing the same. The purpose is to provide.

[0006]

According to the present invention, there is provided a solid-state imaging device comprising: a solid-state imaging device chip provided with a connection portion at a periphery of an imaging region; and a transparent cap for protecting the solid-state imaging device chip. With a first flexi
Connect the leads formed on the surface of the
The other part was formed on the surface of the second flexible substrate
The lead is connected, and the space between the periphery of the imaging region and the cap is sealed so that an airtight space is formed near the imaging region.

A solid-state imaging device according to the present invention includes a solid-state imaging device chip provided with a connection portion at a peripheral portion of an imaging region, and a transparent cap for protecting the solid-state imaging device chip . Partly on the surface of the first flexible substrate
Connect the formed lead and connect a second part to the other part of the connection part.
Connect the leads formed on the surface of the flexible board,
An insulating film is formed on a portion of the lead corresponding to the edge of the solid-state imaging device chip, and the space between the peripheral edge of the imaging region and the cap is sealed.

Here, the lead can be connected to the connection portion by an anisotropic conductive film.

Further, a lead with a carrier tape can be connected to the connection portion.

Furthermore, the solid-state image sensor chip and the cap can have substantially the same area.

[0011] Furthermore, it is possible to have an on-chip microlens above the imaging area.

On the other hand, according to the method of manufacturing a solid-state imaging device according to the present invention, the leads of the flexible substrate on which the leads are formed
Paste a semi-cured anisotropic conductive film on the formed surface,
Paste the adhesive resin on the surface, these flexible substrates,
An opening is formed by punching anisotropic conductive film and adhesive resin at once
And a flexible substrate on the solid-state image sensor chip
Is placed on top of the transparent solid-state image sensor chip protection
Mounting a cap and performing thermocompression bonding, and anisotropically connecting portions provided on the periphery of the imaging region of the solid-state imaging device chip.
The lead is connected via the conductive film, and the space between the cap and the periphery of the imaging region is sealed so that a space is formed near the imaging region.

In the case of the solid-state imaging device according to the present invention, the space between the peripheral edge of the imaging region and the cap is sealed so that an airtight space is formed near the imaging region of the solid-state imaging device chip. In addition, entry of moisture, dust, and the like into this space is prevented, and dew condensation on the imaging region and deterioration of imaging characteristics are prevented.

Further, in the solid-state imaging device according to the present invention, since an insulating film is formed on a portion of the lead corresponding to the edge of the solid-state image sensor chip, an electrical short-circuit between the lead and the edge of the solid-state image sensor chip is achieved. Is prevented.

Here, if the leads are connected to the connection portions by the anisotropic conductive film, these connections and the sealing between the peripheral portion of the imaging region and the cap are performed simultaneously.

Further, if the lead with the carrier tape is configured to be connected to the connecting portion, the leads do not come apart or come into contact with each other when connecting to the external terminal.

Further, when the solid-state image pickup device chip and the cap have substantially the same area, a solid-state image pickup device substantially equal in size to the solid-state image pickup device chip can be easily obtained.

Furthermore, if the present invention is applied to a solid-state imaging device having an on-chip microlens L above an imaging region, the upper surface of the on-chip microlens L is in direct contact with air, so that the solid-state imaging device, cap and The difference in the refractive index at the lens interface is larger than that in the conventional example in which an organic material is filled between the lenses, and the light collection efficiency is improved.

On the other hand, in the method for manufacturing a solid-state imaging device according to the present invention, the lead is connected to the connection portion 4 provided on the peripheral portion of the imaging region of the solid-state imaging device chip 1 via an anisotropic conductive film.
It is continued, and as a space is formed in the vicinity of the imaging region
By sealing the gap between the cap and the periphery of the above-described imaging region, a solid-state imaging device having an airtight space near the imaging region of the solid-state imaging device chip can be obtained by a simple process.

[0020]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of a solid-state imaging device and a method of manufacturing the same according to the present invention will be described below with reference to the drawings.

FIG. 1 is an exploded perspective view showing a schematic configuration of the solid-state imaging device according to the present embodiment. As shown in the figure, the solid-state imaging device of this embodiment has a solid-state imaging device chip (hereinafter simply referred to as “chip”) 1 similar to the conventional example. That is, in the chip 1, an imaging region 3 made of a CCD is formed at the center of a rectangular substrate 2, and an electrode pad 4 made of, for example, Al is provided as a connection portion at the periphery. In this embodiment, a plurality of electrode pads 4 are arranged on both sides of the long side of the imaging region 3.

As shown in FIG. 1, an anisotropic conductive film 5, a flexible substrate 6 as a carrier tape, an adhesive resin 7, and a cap 8 are placed on the chip 1 in this order. The solid-state imaging device 1 as shown in FIGS. 2 to 7 is obtained.

Here, FIG. 2 shows the solid-state imaging device 1 of the present embodiment.
FIG. 3 is a view of the solid-state imaging device 1 of the present embodiment as viewed in the direction of the arrow Y in FIG. 1, FIG. 4A is a cross-sectional view taken along the line AB in FIG. 2, FIG. 4B is an enlarged view of a portion E in FIG. FIG. 4C is an enlarged view of a portion F in FIG. 4A, and FIG. 5 is a solid-state imaging device 1 of the present embodiment.
6, FIG. 6 is a cross-sectional view taken along line CD of FIG. 2, and FIG. 7 is a view of the solid-state imaging device 1 of the present embodiment as viewed in the direction of the arrow X in FIG.

As shown in FIG. 4C, an on-chip microlens L made of a transparent organic material (for example, polyimide) is formed on the upper surface of the photodiode 9 in the imaging area 3 of the chip 1. As shown in FIG. 4B, bumps (for example, Au ball bumps) 10 for connecting to the anisotropic conductive film 5 are formed on each electrode pad 4.

The anisotropic conductive film 5 has substantially the same size as the chip 1, and a portion corresponding to the imaging region 3 is punched. The anisotropic conductive film 5 has conductive particles 12 dispersed in an adhesive 11 made of, for example, a resin.
It has a thickness of several tens of μm. The anisotropic conductive film 5
May be configured to be bonded to the flexible substrate 6 in advance.

The flexible substrate 6 is made of a resin (for example, polyimide) having a thickness of several tens μm, and is formed in a long rectangular shape. Then, as shown in FIG.
The portion corresponding to the imaging region 3 is punched out. FIG.
As shown in FIG. 6, the flexible substrate 6 is formed such that the length (width) of the short side is substantially the same as or slightly shorter than the length of the long side of the chip 1. Then, the length of the chip 1 is set with respect to the long side of the flexible substrate 6.
The flexible substrates 6 are stacked so that the sides are orthogonal.

As shown in FIG. 5, on one surface of the flexible substrate 6, a plurality of leads 13 for connecting external terminals are formed in parallel along the longitudinal direction. This lead 13
Is made of a copper foil plated with Au, Sn, or the like. Further, the interval between the adjacent leads 13 is formed so as to be the same as the interval between the electrode pads 4 formed on the chip 1.

A cap 8 is adhered on the flexible substrate 6 by an adhesive resin 7 such as an epoxy resin. The thickness of the adhesive resin 7 is several μm to several tens μm,
It is applied on the flexible substrate 6 or the cap 8. Note that the adhesive resin 7 may be either a thermosetting type or an ultraviolet setting type.

The cap 8 is made of a transparent material such as optical glass or plastic, and has substantially the same size as the chip 1.

Next, an example of a method of manufacturing the solid-state imaging device according to the present embodiment will be described. First, the anisotropic conductive film 5 is sandwiched between the chip 1 having the above-described structure and the flexible substrate 6, and thermocompression bonding is performed, for example, at 160 ° for 40 seconds at 50 kgf / cm ² . In this case, the positions of the leads 13 of the flexible substrate 6 and the bumps 10 of the chip 1 are aligned using a gang bonder or the like used for inner lead bonding of TAB, and the anisotropic conductive film 5 is aligned using a heat block. The entire surface is uniformly heated and pressed. As a result of such thermocompression bonding, for example, as shown in FIG. 4B, the conductive particles 12 in the anisotropic conductive film 5 come into contact with the leads 13 of the flexible substrate 6 and the bumps 13 of the chip 1, and these are electrically connected. Is done.

Thereafter, the cap 8 is placed on the flexible substrate 6 with the adhesive resin 7 interposed therebetween, and the adhesive resin 7 is cured by thermocompression bonding or irradiation with ultraviolet rays to fix the cap 8 on the flexible substrate 6. When performing thermocompression bonding, it is necessary to perform compression bonding at a temperature (for example, 160 ° C. or less) at which deterioration of the color filter (not shown) of the chip 1 does not occur.

In the case of the solid-state imaging device of this embodiment manufactured by the above-described method, as shown in FIGS. 4A and 6, several tens to one hundred and several tens are provided between the upper surface of the imaging region 3 of the chip 1 and the cap 8. A gap of μm is formed. Then, as shown in FIGS. 3 and 6, the space 14 formed between the flexible substrate 6 and the chip 1 is sealed by the anisotropic conductive film 5 and the adhesive resin 7 over the entire circumference.

In the solid-state imaging device of this embodiment having such a configuration, since the upper surface of the on-chip micro lens L on the photodiode 9 of the chip 1 is in direct contact with air, the difference in the refractive index at the interface of the lens is obtained. , And as a result, the same sensitivity and smear characteristics as those of a ceramic package having a hollow structure can be obtained.

In the solid-state imaging device according to the present embodiment, the space 14 near the imaging region 3 of the chip 1 is completely sealed, and the invasion of moisture, dust and the like into the space 14 is prevented. Dew condensation on the imaging region 3 and deterioration of the imaging characteristics can be prevented, and reliability can be ensured.

Further, since the cap 8 can be made almost the same size as the chip 1, the size of the package can be reduced to about the chip size.

In addition, according to the manufacturing method of this embodiment, a solid-state imaging device having an airtight space 14 near the imaging region 3 of the chip 1 can be obtained by a simple process, so that the imaging characteristics and the reliability are improved. A high solid-state imaging device can be manufactured at low cost.

As described above, in the solid-state imaging device of this embodiment, the leads 13 of the flexible substrate 6 and the bumps 10 on the electrode pads 4 of the solid-state imaging device chip 1 are connected via the anisotropic conductive film 5. . When the thermocompression bonding of the anisotropic conductive film 5 is performed, the bumps 10 on the electrode pads 4 are electrically connected to the leads 13 of the flexible substrate 6 via the conductive particles 12 as well as the bumps 10. If the pressure at the time is high or if the flexible substrate 6 is warped, there is a possibility that the edge (so-called edge) of the solid-state imaging device chip 1 and the lead 13 come into contact directly or via the conductive particles 12.

The edge of the solid-state image pickup device chip 1 has a dicing straight which is a cutting margin at the time of dicing, and in most cases, this portion is Si itself. Since the substrate portion is normally applied to the Si portion of the solid-state imaging device chip 1, when this edge portion comes into contact with the lead 13 connected to the electrode pad 4, an electrical short circuit occurs, resulting in a defective product. Would.

8 to 10 show another embodiment of the present invention in which the above points are improved. 8 is a plan view of the solid-state imaging device of this embodiment, FIG. 9 is a rear view, and FIG. 10 is a cross-sectional view of a main part.

The solid-state imaging device of this embodiment is the same as the solid-state imaging device of the embodiment shown in FIGS.
A thin insulating film (for example, a thin film) A polyimide film, etc.) 31 is formed to prevent the chip insulation from coming into contact with the leads 13 of the flexible substrate 6.

In this case, a thin insulating film is formed on the lead 13 in a portion corresponding to the region including the chip edge of the flexible substrate 6, and the anisotropic conductive film 5 is formed thereon.

As shown in FIGS. 8 and 9, the insulating film 31 of this embodiment is formed in a strip shape over the entire width of the flexible substrate 6 corresponding to both end edges of the chip 1.

When forming the insulating film 31, a photoresist mask having an opening at the portion where the insulating film 31 is to be formed is formed on the surface of the flexible substrate 6 on the lead 13 side, and a liquid insulating material is poured into the opening. The insulating film 31 can be formed on a desired region by curing (for example, curing by irradiation with ultraviolet light, or curing by applying heat), and then removing the photoresist mask.

Here, the height of the bump 10 is, for example, 30 μm.
m, if the thickness of the anisotropic conductive film 5 is 25 μm, the insulating film 31 must be at least 10 μm or less. If the thickness of the insulating film 31 exceeds 10 μm, the pressure of the bump 10 and the lead 13 is prevented by the thickness of the insulating film 31,
Conversely, an open defect occurs. Also, the insulating film 3
No. 1 requires heat resistance at least equal to the compression temperature.
In this way, good connection can be made without contact between the leads 13 of the flexible substrate 6 and the chip edges. Other configurations in FIGS. 8 to 10 are the same as those of the solid-state imaging device in FIGS. 1 to 4 described above, and thus the same reference numerals are given and duplicate description is omitted.

According to the solid-state imaging device of this embodiment, the lead 1 at the portion corresponding to the chip edge of the flexible substrate 6
Since the insulating film 31 is formed on the substrate 3, even if the pressing force is large or the flexible substrate 6 is warped, the insulating film 31 makes direct contact between the lead 13 of the flexible substrate 6 and the chip edge, or a difference. Electrical contact of the anisotropic conductive film 5 via the conductive particles 12 is prevented, and the reliability as a solid-state imaging device can be improved.

FIGS. 11 to 13 show still another embodiment of the present invention. In this example, the flexible substrate 6 is divided into two parts, and the respective flexible substrates 6A and 6B are arranged only on both sides of the long side where the electrode pads 4 of the solid-state imaging device chip 1 are located. That is, at the short side, the transparent cap 8 and the chip 1 are directly mechanically joined by an adhesive resin (adhesive resin formed in a frame shape shown in FIG. 1) 7. And also in this example, the flexible substrate 6A corresponding to the region including the edge of the solid-state imaging device chip 1,
A thin insulating film 31 is formed on the lead 13 of 6B.

Other structures are the same as those shown in FIGS. 1 to 4, and corresponding parts are denoted by the same reference numerals and redundant description is omitted.

In the solid-state imaging device of this embodiment,
A space 14 near the imaging area 3 of the chip 1 is completely hermetically sealed, and a package having a hollow structure is realized. And
Also in this example, since the insulating film 31 is formed on the lead 13 corresponding to the edge of the chip 1, an electrical short circuit between the edge of the chip 1 and the lead 13 of the flexible substrate 6 is prevented, and high reliability is achieved. A solid-state imaging device is obtained.

Although the insulating film 31 in the above example is formed in a strip shape over the entire width of the flexible substrate 6 so as to cover the entire edge of the chip, as shown in FIG. Selectively insulating film 31 only on top
Even if it forms, it can fully fulfill a role.

The present invention can also be applied to a case where a TAB tape is used as the flexible substrate 6. In this case, a method of directly thermocompression bonding the TAB tape and the bumps of the solid-state imaging device chip, a method of connecting the TAB tape to the solid-state imaging device chip via an anisotropic thin film, and the like can be considered.

Note that the present invention is not limited to the above-described embodiments, and various modifications can be made.

For example, as shown in FIG. 15, after assembling the solid-state imaging device, if the flexible substrate 6 is bent and fixed at a substantially right angle near the end of the chip 1, the size of the solid-state imaging device can be further reduced. become. In this case, it is preferable to select a flexible substrate 6 made of a material that is easily bent.

When the portion returns to its original state after bending the flexible substrate 6, for example, as shown in FIG. 16, the end of the chip 1 and the flexible substrate 6 are fixed with an adhesive, or as shown in FIG. As shown in (1), if the leads 13 are connected to each other by using a connecting member 16 made of, for example, copper at a portion to be bent, the flexible substrate 6 can be bent substantially at a right angle. These examples of FIGS. 15, 16 and 17 show the above-described insulating film 31.
Of course, the present invention can be applied to the case where

Further, according to the above embodiment, the chip 1
Since the gap between the upper surface of the cap 8 and the cap 8 is very narrow as several tens μm ± several μm and can be designed with high precision, an optical low-pass filter, a microlens, an infrared cut filter and the like are used in place of the cap 8.
It can be glued on top. Thus, for example, it is possible to achieve a reduction in size when mounted on a video camera or the like.

Furthermore, in the above-described embodiment, the connection is made by using the flexible substrate 6. However, the present invention is not limited to this, and other leads with a carrier tape may be used, or the lead wires may be directly connected. It can also be connected to the bumps of the chip 1. However, when the flexible substrate 6 is used, the manufacturing and wiring become extremely easy, and since the contact between the leads 13 is prevented, there is an advantage that the reliability is improved.

On the other hand, the manufacturing method is not limited to the above-described embodiment, and various changes can be made. For example, a semi-cured anisotropic conductive film 5 is formed on each surface of the flexible substrate 6.
If the adhesive resin 7 and the adhesive resin 7 are pasted and punched at once, the number of steps can be reduced. Furthermore, if the flexible substrate 6 is mounted on the chip 1 and the cap 8 is mounted thereon and thermocompression bonding is performed, the sealing can be performed in a single compression process, and the number of steps can be significantly reduced. Can be. In addition, it is also possible to perform bonding using an anisotropic conductive film 5 instead of the adhesive resin 7.

[0057]

As described above, in the solid-state imaging device according to the present invention, the gap between the periphery of the imaging region and the cap is formed such that an airtight space is formed near the imaging region of the solid-state imaging device. By sealing, it is possible to prevent dew condensation on the imaging region and deterioration of the imaging characteristics, thereby ensuring reliability.

In addition, an insulating film is formed on a portion of the lead corresponding to the edge of the solid-state image sensor chip for the lead connected to the connection portion at the peripheral portion of the imaging region, so that the lead and the solid-state image sensor chip edge are formed. An electrical short with the edge is prevented, and further reliability can be ensured.

In this case, if the leads are connected to the connection portions by the anisotropic conductive film, these connections and the sealing between the peripheral portion of the imaging region and the cap are performed at the same time. It is possible to reduce the number of processes and man-hours.

Further, if the lead with the carrier tape is connected to the connection portion, it is possible to prevent the lead from coming apart and the contact between the leads at the time of connection to the external terminal. Nature can be secured.

Furthermore, if the solid-state image pickup device chip and the cap have substantially the same area, a solid-state image pickup device having substantially the same size as the chip can be easily obtained, so that the size of the device can be reduced.

Furthermore, when the present invention is applied to a solid-state imaging device having an on-chip microlens above the imaging region, the light collection can be made easier than in the conventional example in which an organic material is filled between the solid-state imaging device and the cap. Since the luminous efficiency can be improved, a small-sized solid-state imaging device having imaging characteristics equivalent to those of a solid-state imaging device using a ceramic package can be obtained.

In addition, according to the method of manufacturing the solid-state imaging device according to the present invention, the lead is connected to the connection portion provided at the peripheral portion of the imaging region of the solid-state imaging device chip via the anisotropic conductive film.
It is, and calibration as space is formed in the vicinity of the imaging region
By sealing between-up the peripheral portion of the above-mentioned image capturing area, the solid-state imaging device can be obtained with air-tight space in the vicinity of the imaging region of the solid-state imaging device chip in a simple process, as a result, A solid-state imaging device with high imaging characteristics and high reliability can be manufactured at low cost.

[Brief description of the drawings]

FIG. 1 is an exploded perspective view showing a schematic configuration of an embodiment of a solid-state imaging device according to the present invention.

FIG. 2 is a plan view showing the whole of the embodiment.

FIG. 3 is a view in the direction of arrow Y in FIG. 1 of the embodiment.

4 is a sectional view taken along line AB of FIG. 2; FIG. B It is an enlarged view of the E section in FIG. 4A. C It is an enlarged view of F part in FIG. 4A.

FIG. 5 is a rear view showing the whole of the embodiment.

FIG. 6 is a sectional view taken along line CD of FIG. 2;

FIG. 7 is a view in the X direction of FIG. 2 of the embodiment.

FIG. 8 is an overall plan view showing another embodiment of the solid-state imaging device according to the present invention.

FIG. 9 is an overall rear view of the same embodiment.

FIG. 10 is a sectional view of a main part of the embodiment.

FIG. 11 is an overall plan view showing another embodiment of the solid-state imaging device according to the present invention.

FIG. 12 is an overall rear view of the embodiment.

FIG. 13 is a sectional view of a main part of the embodiment.

FIG. 14 is an overall rear view showing another embodiment of the solid-state imaging device according to the present invention.

FIG. 15 is a cross-sectional view showing the entire solid-state imaging device according to another embodiment of the present invention.

FIG. 16 is a cross-sectional view of a principal part showing still another embodiment of the solid-state imaging device according to the present invention.

FIG. 17 is a cross-sectional view of a principal part showing still another embodiment of the solid-state imaging device according to the present invention.

FIG. 18 is a plan view showing the entire conventional solid-state imaging device.

FIG. 19 is a sectional view taken along line ab of FIG. 18;

FIG. 20 is a cross-sectional view illustrating a main part of a conventional solid-state imaging device.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Solid imaging element chip 2 Substrate 3 Imaging area 4 Electrode pad (connection part) 5 Anisotropic conductive film 6, 6A, 6B Flexible substrate (carrier tape) 7 Adhesive resin 8 Cap 9 Photodiode 10 Bump 11 Adhesive 12 Conductive particles 13 Lead 14 Space L On-chip micro lens 31 Insulating film

────────────────────────────────────────────────── ─── Continuation of the front page (56) References JP-A-5-56917 (JP, A) JP-A-5-335534 (JP, A) JP-A-1-95553 (JP, A) JP-A-5-95553 110960 (JP, A) JP-A-7-99214 (JP, A) JP-A-4-342146 (JP, A) JP-A-4-360562 (JP, A) (58) Fields investigated (Int. Cl. ⁷ , DB name) H01L 27/14 H01L 21/60

Claims (7)

(57) [Claims] 1. A solid-state imaging device chip having a connection portion provided at a peripheral portion of an imaging region, and a transparent cap for protecting the solid-state imaging device chip . On the surface of a flexible board
Connect the formed lead, and to the other part of the connection part,
Connect the lead formed on the surface of the second flexible substrate
It continued, and the solid-state imaging apparatus characterized by comprising sealing between the peripheral portion and the cap of the imaging area as airtight space near the imaging region is formed. 2. A solid-state imaging device chip having a connection portion provided on a peripheral portion of an imaging region, and a transparent cap for protecting the solid-state imaging device chip . On the surface of a flexible board
Connect the formed lead, and to the other part of the connection part,
Connect the lead formed on the surface of the second flexible substrate
An insulating film is formed on a portion of the lead corresponding to an edge of the solid-state imaging device chip, and a gap between a peripheral portion of the imaging region and the cap is sealed. Imaging device. 3. The solid-state imaging device according to claim 1, wherein leads are connected to the connection portions by an anisotropic conductive film. 4. The solid-state imaging device according to claim 1, wherein a lead with a carrier tape is connected to the connection portion. 5. The solid-state imaging device according to claim 1, wherein the solid-state imaging device chip and the cap have substantially the same area. 6. The solid-state imaging device according to claim 1, further comprising an on-chip microlens above the imaging region. 7. A flexible substrate having leads formed thereon.
Paste a semi-cured anisotropic conductive film on the surface where the leads are formed
Paste the adhesive resin on the other surface
Punch out the substrate, anisotropic conductive film and adhesive resin all at once.
Forming an opening, and forming the frame on the solid-state imaging device chip.
Place the xivable substrate on which the solid-state image sensor chip
A process of placing a protective transparent cap and performing thermocompression bonding.
The lead is connected to a connection portion provided on a peripheral portion of an imaging region of the solid-state imaging device chip via the anisotropic conductive film.
It is, and so a space is formed in the vicinity of the imaging region
A seal between the peripheral edge of the cap and the imaging region
A method for manufacturing a solid-state imaging device, comprising: