JP3234385B2 - Etching method, components in processing vessel and etching apparatus - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION The present invention relates to an etching method and an etching method .
The present invention relates to components in a processing container of a chucking device and an etching device .

[0002]

2. Description of the Related Art Taking a semiconductor wafer (hereinafter, referred to as "wafer") on the surface of which a semiconductor device such as an LSI is formed as an example, an etching gas is introduced into a processing chamber which is conventionally airtight. Plasma is generated in the processing chamber by applying high-frequency power, and an etching process is performed on the wafer in this plasma atmosphere, for example, for forming a contact hole.

For example, a silicon oxide film (SiO ₂ )
To explain on the basis of the etching, when carrying out the etching of the silicon oxide film formed conventionally on a wafer, F (fluorine) containing gas, such as for example CF ₄ as the etching gas, Cl, such as CCl ₄ ( chlorine) based gas, more it is often used, such as F-Cl-based gas such as CClF _3. And among the various types of gas,
For example, in the case of CF ₄ , the silicon oxide film (SiO ₂ ) is removed by F ^* (fluorine radical) generated by dissociating gas molecules by plasma.

[0004] Nowadays, with the high integration of devices, there is a demand for an etching method capable of ultra-fine processing corresponding to half micron and quarter micron. Therefore, for example, a contact hole can be formed to 0.35 μm or less. Although it becomes necessary, in order to form such fine contact holes, it is necessary to realize anisotropic etching having a high selectivity in a high-density plasma atmosphere.

However, in a high-density plasma atmosphere, the energy absorbed by the plasma is high, and the dissociation of gas molecules progresses. As a result, in the case of CF ₄ , for example, F ^* (fluorine radical) is generated. Excessive generation tends to lower the selectivity and cause the etching to shift to isotropic.

Therefore, it is necessary to remove the excess fluorine radicals by some means. In recent years, however, recently, such fluorine radicals easily react with such fluorine radicals to render them ineffective, for example, Si (silicon) or the like. It has been proposed to configure a member in a processing chamber such as an electrode plate by a material.

[0007]

However, in such a method using Si alone as a member in the processing chamber, it is necessary to first heat the member itself to a high temperature of about 300 ° C. by an appropriate heating means. Also, as the number of times of processing increases, the surface area of the member surface changes and the reaction surface area changes. As a result, the amount of reaction with fluorine radicals is not constant, and the essential etching process itself differs from wafer to wafer. There is also a fear that it will come. Further, maintenance is required every certain number of processes, and the throughput is reduced.

The present invention has been made in view of such a problem, and basically absorbs and removes an excessive radical component which shifts to isotropic etching by a constant mixture gas, It is intended to improve the selectivity of anisotropic etching.

[0009]

In order to achieve the above object, according to an etching method of the present invention, a processing gas is introduced into a processing chamber, and a predetermined etching process is performed on an object to be processed in a plasma atmosphere. in the etching method, the focus ring is disposed in the processing chamber, said focus Li
Surface is made of silicon dioxide and silicon monoxide inside
It has a double structure, and at least the processing gas contains a mixed gas of a chlorofluorocarbon-based gas and an S (sulfur) -based gas containing no F (fluorine).

According to a second aspect of the present invention, in the etching method of introducing a processing gas into a processing chamber and performing a predetermined etching process on a target object under a plasma atmosphere, a focus ring is disposed in the processing chamber. The focus ring has a double structure of silicon dioxide on the surface and silicon monoxide on the inside, and at least the processing gas contains a fluorocarbon gas and O (oxygen) without F (fluorine). ) And a mixed gas with an S (sulfur) -based gas containing Note that in an etching method in which a processing gas is introduced into a processing chamber and a target object is subjected to a predetermined etching process in a plasma atmosphere, a gas containing F (fluorine) and a gas containing F (fluorine) are included as the processing gas. A mixture gas containing no S (sulfur) -based gas is used, and the flow rate of the S (sulfur) -based gas containing no F (fluorine) is adjusted to generate a gas resulting from the dissociation reaction of the gas containing F (fluorine) Control of suppression of excessive fluorine radicals may be performed. Further , in an etching method in which a processing gas is introduced into a processing chamber and a predetermined etching process is performed on a silicon oxide film of the processing target under a plasma atmosphere with respect to the processing target,
A mixed gas of a gas containing C (carbon) and F (fluorine), a gas containing S (sulfur) and O (oxygen), and not containing F (fluorine) is used. By controlling the flow rate of the gas containing O (oxygen) and not containing F (fluorine), it is possible to control the suppression of excessive fluorine radicals generated by the dissociation reaction of the gas containing C (carbon) and F (fluorine). It may be performed. In these etching methods, the plasma atmosphere is generated by applying high-frequency power to an upper electrode and a susceptor provided in the processing container, and the high-frequency power is separated from the processing container via a transformer. Alternatively, the secondary side waveform supplied from the primary side high-frequency power supply and passed through the transformer may be matched.
Furthermore, the high frequency power applied to the upper electrode and the susceptor may be 180 degrees out of phase. Claim
According to 5 , the processing gas is introduced into the processing container, and the object to be processed in the processing container is subjected to an etching process under a plasma atmosphere. A surface material and an internal material, wherein the surface material is made of a passive material, and the internal material is exposed when the surface material is etched, and is generated at the time of the etching. And a component that absorbs and removes excess F (fluorine). In this case, as in claim 6, said surface material SiO ₂ and (silicon dioxide), the inner material SiO (silicon monoxide)
It may be. Further example as in claim 7, as the structural member can include a focus ring. According to an eighth aspect of the present invention, an etching apparatus for introducing a processing gas into a processing chamber formed in a processing chamber and performing a predetermined etching process on a processing target in a plasma atmosphere is provided in the processing chamber. An etching apparatus is provided, comprising the constituent member in the processing container according to any one of claims 5, 6 and 7 .

The fluorocarbon gas referred to in the present invention is, for example, a C _x F _y -based halogenated carbon compound (so-called freon gas) such as CF _{4 described} above,
₂ , Cl ₂ , Br ₂ , I ₂ , At ₂ , Cl ₃ F, ICl ₃ , C
_{lF, ICl, BrF, BrF 3} , BrF 5, IF 5, I
Halogen gas, interhalogen compounds such as F _7, HF, HC
l, hydrogen halides such as HBr, HI and HAt, B
_{F 3, BCl 3, B 2} Cl 4, B 4 Cl 4, BBr 3, halogenated boron BI ₃ etc., B ₂ H ₆ (diborane), B ₄ H _{10 (tetraborane), B 5 H 9, B} 5 H _11, B ₆ H ₁₀ borohydride such a concept including halogenated borohydride such as B ₂ H ₂ F _4.

The S (sulfur) gas containing no F (fluorine) includes, for example, thionyls such as SOBr ₂ (thionyl bromide), CS ₂ , H ₂ S, N ₂ S ₂ , N ₄ S ₄ , As ₄ S
_{4, As 2 S 3, P} 4 S 7, P 2 S sulfides such as _5, S
O, SO ₂ , SO ₃ , S ₂ O, S ₂ O ₃ , S ₂ O ₇ , S
It contains sulfur oxides such as O _{4 and} does not contain F (fluorine).
As the S (sulfur) -based gas containing (oxygen), for example,
SO, SO ₂ , SO ₃ , S ₂ O, S ₂ which are sulfur oxides
O ₃ , S ₂ O ₇ , and SO ₄ are mentioned.

[0013]

The former chlorofluorocarbon gas functions as a so-called reaction gas and causes a dissociation reaction in plasma to generate an etchant such as a radical component for performing etching. On the other hand, the latter S (sulfur) -based gas that does not contain F (fluorine) reacts with the excess radical component when the dissociation of the reaction gas proceeds and an excess radical component is generated, Remove this.

Therefore, the flow rate of the latter F (fluorine) -free S (sulfur) -based gas is controlled by, for example, a mass flow controller according to the degree of generation of an excessive radical component, that is, the degree of dissociation of the reaction gas. In addition, it is possible to suppress an excessive radical component, improve an etching selectivity, and perform an anisotropic etching process with an increased vertical anisotropy.

In view of the function of each of these gases, the processing gas introduced into the processing chamber during the actual etching process should be at least these fluorocarbon gases and F (fluorine).
An S (sulfur) -based gas which is not contained may be contained, and it is not prevented to use an inert gas such as N ₂ or Ar gas in combination.

Further, instead of the S (sulfur) based gas containing no F (fluorine), in the case of using the S (sulfur) based gas containing F (fluorine) containing no O (oxygen), the O ( Oxygen) reacts with, for example, excess C (carbon) in the processing gas, resulting in C + O ₂ → CO ₂ 、, which is exhausted. Therefore, it is possible to remove the excess carbon that hinders anisotropic etching in the processing gas.

[0017]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the accompanying drawings. FIG. 1 schematically shows a cross section of a plasma etching apparatus 1 used for carrying out the present embodiment. Reference numeral 1 denotes a so-called parallel plate type RIE device in which electrode plates face each other in parallel.

The plasma etching apparatus 1 has a processing container 2 formed into a cylindrical or rectangular shape made of aluminum or the like whose surface is subjected to anodized aluminum, for example, and the processing container 2 is grounded. At the bottom of the processing chamber formed in the processing chamber 2, a substantially columnar shape for mounting an object to be processed, for example, a semiconductor wafer (hereinafter, referred to as “wafer”) W via an insulating plate 3 such as ceramic. The susceptor support 4 is accommodated, and a susceptor 5 constituting a lower electrode is provided above the susceptor support 4. In this embodiment, a silicon oxide film (Si) on the wafer W having a silicon substrate is used.
The case of performing O ₂ ) etching will be described.

A coolant chamber 6 is provided inside the susceptor support 4. A coolant for temperature control, such as liquid nitrogen, can be introduced into the coolant chamber 6 through a coolant introduction pipe 7. , The introduced refrigerant circulates in the refrigerant chamber 6,
The cold generated during this time is transferred from the coolant chamber 6 to the wafer W via the susceptor 5, and the processing surface of the wafer W can be cooled to a desired temperature. When liquid nitrogen as described above is used as the refrigerant, for example, nitrogen gas generated by nucleate boiling is discharged from the refrigerant discharge pipe 8 to the outside of the processing chamber 2.

The susceptor 5 is formed in the shape of a disk having a convex upper surface center portion, on which an electrostatic chuck 11 having substantially the same shape as the wafer W is provided. This electrostatic chuck 11
Has a configuration in which a conductive layer 12 is sandwiched between two polymer polyimide films, and a DC high-voltage power supply 13 installed outside the processing vessel 2 is connected to the conductive layer 12 by, for example, 1. By applying a DC high voltage of 0.5 kV, the wafer W mounted on the upper surface of the electrostatic chuck 11 is suction-held at that position by Coulomb force.

An annular focus ring 15 is arranged on the peripheral edge of the upper end of the susceptor 5 so as to surround the wafer W mounted on the electrostatic chuck 11. The focus ring 15 is made of an insulating material that does not attract reactive ions, and is configured so that reactive ions generated by plasma can be effectively incident only on the wafer W inside the focus ring 15.

By forming the material of the focus ring 15 from, for example, SiO (silicon monoxide), it is possible to react with fluorine radicals and remove them as described later.

Above the susceptor 5, an upper electrode 21 is disposed at a position facing the susceptor 5 in parallel and spaced from the susceptor 5 by about 15 to 20 mm via an insulating material 22. Supported on top.

The upper electrode 21 has, on the surface facing the susceptor 5, an electrode plate 24 having a large number of diffusion holes 23 and made of, for example, SiC or amorphous carbon. A support plate 25 formed of, for example, aluminum whose surface is subjected to an alumite oxidation treatment and forming a hollow portion therebetween, and a gas diffusion plate 26 is provided on the upper surface of the electrode plate 24.

The gas diffusion plate 26 has a form as shown in FIG. 2, and is fixed to the electrode plate 24 by a fixing member 27 such as a bolt as shown in FIG. The gas diffusion plate 26 is made of a conductive material having a large number of holes, such as carbon or glass carbon, but may be made of other insulating materials such as ceramics or quartz. However, it is preferable to use the former conductive material because the potential becomes the same as that of the electrode plate 24 and the possibility of abnormal discharge is eliminated.

As shown in FIG. 3, a gas inlet 28 is provided at the center of the support plate 25 in the upper electrode 21. Further, as shown in FIG. The introduction pipe 29 is connected. As shown in FIG. 1, a gas supply pipe 31 is connected to the gas introduction pipe 29, and the gas supply pipe 31 is further branched into three parts via valves 32 and a mass flow controller 33. , Corresponding processing gas supply sources 34, 35, respectively.
It leads to 36. In this embodiment, the processing gas supply source 34 supplies CF ₄ gas, and the processing gas supply source 35 supplies S ₄ gas.
The N ₂ gas is set to be supplied from the O gas and processing gas supply source 36.

An exhaust pipe 41 is connected to a lower portion of the processing vessel 2. The exhaust pipe 44 of the load lock chamber 43 adjacent to the processing vessel 2 via a gate valve 42 is connected to the exhaust pipe 41. It is connected to the exhaust means 45 and is configured to be able to evacuate to a predetermined reduced-pressure atmosphere. Then, the wafer W as the object to be processed is loaded and unloaded between the processing container 2 and the load lock chamber 43 by the transfer means 46 such as a transfer arm provided in the load lock chamber 43. It is configured.

The power unit in the plasma etching apparatus 1 has a so-called power split configuration in which a high-frequency power source is separated from the processing container 2. That is, for example, a high frequency power supply 51 for oscillating a high frequency of 13.56 MHz is installed on the primary side of a transformer 52 composed of an induction coil and the like.
A slide controller 53 that is grounded is provided on the secondary side such as the two induction coils.

The secondary side of the transformer 52 is connected to the electrode plate 24 of the upper electrode 21 and the second matching unit 56 via a first matching unit 54 and a blocking capacitor 55, respectively.
Via the blocking capacitor 57, the susceptor 5
Are connected to the upper electrode 21 and the susceptor 5, respectively.
It is configured to apply high-frequency powers that are 180 ° out of phase with each other.

The plasma etching apparatus 1 for carrying out this embodiment is configured as described above. Next, the operation and the like will be described.
After the gate valve 42 is opened, the carrier is carried into the processing container 2 from the load lock chamber 43 by the carrying means 46 and placed on the electrostatic chuck 11. The wafer W is suction-held on the electrostatic chuck 11 by application of a high-voltage DC power supply 13. Thereafter, after the transfer means 46 is retracted into the load lock chamber 43, the inside of the processing container 2 is evacuated by the exhaust means 45.

On the other hand, while the valve 32 is opened and its flow rate is adjusted by the mass flow controller 33, the processing gas supply source 34 supplies CF ₄ gas, the processing gas supply source 35 supplies SO gas, and the gas supply pipe 31. The gas is introduced into the hollow portion of the upper electrode 23 through the gas introduction pipe 29 and the gas introduction port 28. Further, from the hollow portion, the CF
The mixed gas of the _four gases and the SO gas is discharged to the wafer W through the gas diffusion plate 26 and the diffusion holes 23. As shown in FIG. 3, the gas diffusion plate 26 is made of a porous material. In combination with the configuration of the plurality of diffusion holes 23 which serve as direct discharge ports, discharge is performed to the wafer W very evenly.

The pressure in the processing vessel 2 is, for example, 10 m
After being set and maintained at Torr, the high-frequency power supply 51 is operated, and its output is adjusted by the slide controller 53 of the transformer 52, and the phase of the upper electrode 21 and the susceptor 5 is different by 180 °. High frequency power is applied, plasma is generated between the upper electrode 21 and the susceptor 5, and the wafer W is subjected to predetermined etching by radical components generated by dissociation of the introduced CF ₄ gas. You.

[0033] In this case CF _{4 ^{is, · CF 3 + F - CF}} 3 - + · F CF 3 + + F - CF 3 + + · F + e - as in, will dissociate into multiple stages, F ^- → F ^* +
e ^- becomes, etched against SiO ₂ of F ^* (fluorine radicals) wafer W surface.

However, if the above-described dissociation proceeds to the final stage and excessive fluorine radicals are generated, the vertical anisotropy of the etching is impaired, the selectivity is reduced, and the entire isotropic etching is performed. Will be.

However, in this embodiment, since the SO gas is mixed with the CF ₄ gas and introduced into the processing vessel 2, for example, the following reaction occurs, and excess fluorine radicals are absorbed and removed. You. That is, F ^* + SO → SF ₆ ↑ + O ₂ ↑ (the coefficient is arbitrary), and excess C (carbon) in CF ₄ is exhausted as C + O ₂ ＣＯCO ₂ ↑.

Therefore, excessive fluorine radicals that lower the selectivity are suppressed, and etching with good vertical anisotropy can be performed. In addition, in this embodiment, S (sulfur) which does not contain F (fluorine) but contains O (oxygen)
Since SO gas, which is a system gas, is used, as described above, excess C (carbon) reacts with O in SO to produce CO 2
Exhausted as ₂ (carbon dioxide). Therefore, when used as a mixture of a gas containing C (carbon) as a chlorofluorocarbon-based gas, it is possible to prevent C from depositing on the surface of the object to be processed and hindering anisotropic etching.

Moreover, since the control for suppressing the excessive fluorine radicals can be performed by adjusting the flow rate of the SO gas, for example, the corresponding mass flow controller 33 is used.
This can be easily achieved by the control of.

The high-frequency power applied to the upper electrode 21 and the susceptor 5 is applied to the secondary side, respectively.
Since the matching is performed by the first matching unit 54 and the second matching unit 56, respectively, as shown in FIG. 4, it is possible to apply a high frequency power having a normal sine wave without distortion. In this respect, in this type of apparatus having the conventional power split configuration, matching is performed by providing a matching device only on the primary side, so that a substantially rump-shaped waveform having distortion as shown in FIG. Had become. For this reason, the etching characteristics may be degraded due to the distortion, or the control may be difficult, and the intended etching process may not be performed.

In this regard, in the plasma etching apparatus 1, the first matching device 54 and the second matching device 56 are provided on the secondary side, respectively.
Is provided, it is possible to apply high-frequency power having a sine waveform without distortion as shown in FIG. Therefore, it is possible to perform a predetermined etching process from this point as well. In this case, the first matching device 54 and the second matching device 56 may be configured to be controlled by, for example, a differential variable condenser.

The gas diffusion plate 26 used in the upper electrode 23 of the plasma etching apparatus 1 used in the above-described embodiment is different from a conventional aluminum-based material in that carbon, glass carbon, ceramics, It is made of quartz or the like. Therefore, even when a chlorine-based gas such as CCl ₄ is used as the etching gas, it does not corrode.

Conventionally, a structure is employed in which a plurality of diffusion plates having a large number of diffusion holes are used to perform uniform discharge, which makes the installation and maintenance complicated, but the plasma etching apparatus used in the above-described embodiment is used. In 1,
Since the porous gas diffusion plate 26 is used, a sufficient uniform discharge effect can be obtained by using only one gas diffusion plate 26, and the gas diffusion plate 26 can be fixed by a fixing member 27 such as a bolt. Therefore, installation and maintenance are extremely easy.

In the above-described embodiment, CF ₄ gas is used as a gas for generating an etchant, and SO is used as a gas for generating a component for absorbing and removing an excessive radical component. It is not limited. For example, as a gas for generating an etchant, a C _x F _y -based halogenated carbon compound (so-called freon gas) such as the above CF ₄ , and further, F ₂ , Cl ₂ , Br ₂ , I ₂ , At ₂ , Cl ₃ F, IC
l ₃ , ClF, ICl, BrF, BrF ₃ , BrF ₅ , I
F _5, halogen gas IF ₇ or the like, interhalogen compounds, H
Hydrogen halides such as F, HCl, HBr, HI, HAt, BF ₃ , BCl ₃ , B ₂ Cl ₄ , B ₄ Cl ₄ , BBr ₃ ,
Boron halide such as BI ₃ , B ₂ H ₆ (diborane), B ₄ H
_{10 (tetraborane), B 5 H 9, B} 5 H 11, B 6 H 10 borohydride such, it is possible to use halide borohydride such as B ₂ H ₂ F _4.

On the other hand, as a gas for generating a component capable of absorbing and removing an excess radical component, an S (sulfur) gas containing no F (fluorine), for example, thionyls such as SOBr ₂ (thionyl bromide), CS ₂ , H ₂ S, N ₂ S ₂ , N
Sulfides such as ₄ S ₄ , As ₄ S ₄ , As ₂ S ₃ , P ₄ S ₇ , P ₂ S ₅ , SO, SO ₂ , SO ₃ , S ₂ O, S ₂ O ₃ , S ₂ O ₇ , S
It is possible to use a sulfur oxide gas such as O ₄ .

In particular, F (fluorine) such as sulfur oxides such as SO ₂ , SO ₃ , S ₂ O, S ₂ O ₃ , S ₂ O ₇ , and SO ₄ used in the examples. If an S (sulfur) -based gas containing O (oxygen) is used, if it is mixed with a C _x F _y -based halogenated carbon compound (so-called freon gas) such as CF ₄ , excess C (Carbon) and O
Since it reacts with (oxygen) to form CO ₂ (carbon dioxide) and is exhausted, it is possible to prevent the carbon compound that inhibits anisotropic etching from being deposited on the surface of the object.

Incidentally, an annular focus ring 15 is arranged on the peripheral edge of the upper end of the susceptor 5 in the processing vessel 2 of the plasma etching apparatus 1 used in the present embodiment. , SiO
When constituted by (silicon monoxide), the following effects can be obtained.

[0046] That is SiO, as shown in FIG. 6, the SiO ₂ is immobile state is easily formed on the surface thereof. Then, when the silicon oxide film is etched on the wafer W, the SiO _{2 on the} surface of the focus ring 15 is also etched, exposing the SiO inside. Then, this SiO reacts with the above-mentioned F ^* (fluorine radical), and a reaction of SiO + F ^* → SiF ₄ + O ₂起 こ り occurs, so that excess fluorine radical can be absorbed and removed. In addition, since the generated reaction product is SiF ₄ , there is no possibility that the inside of the processing container will be contaminated. Si Moreover, the SiO ₂ is immobile state at room temperature
Since the focus ring 15 is formed on the surface of O, for example, even if the above-mentioned focus ring 15 is made of SiO, a dedicated heating means or the like is not required separately, and the handling is easy. Others
For example, the same effect can be obtained even if the inner wall of the processing container 2 is made of SiO.

Although the apparatus used in the above embodiment was a so-called parallel plate type plasma etching apparatus, the present invention is not limited to this, and other etching apparatuses such as a magnetron RIE apparatus, An ECR etching device may be used. Of course, the object to be processed is not limited to the semiconductor wafer as described above, and the same effect can be obtained even with an LCD substrate, for example.

[0048]

According to the present invention , the processing gas introduced into the processing chamber can suppress the radical component that hinders the vertical anisotropy, so that anisotropic etching with an improved selectivity can be realized. . In addition, by controlling the flow rate of the processing gas, the suppression can be easily controlled.

[0049] The excess C that prevents anisotropic etching
Even if (carbon) is present in the processing gas, it can also be removed, and the selectivity can be improved from this point as well.

[Brief description of the drawings]

FIG. 1 is an explanatory side view of a plasma etching apparatus used in carrying out an embodiment of the present invention.

FIG. 2 is a perspective view of a gas diffusion plate used in an upper electrode in the plasma etching apparatus of FIG.

FIG. 3 is an explanatory view of a vertical cross section of an upper electrode in the plasma etching apparatus of FIG.

FIG. 4 is an explanatory diagram showing a waveform of a high frequency applied in the plasma etching apparatus of FIG. 1;

FIG. 5 is an explanatory view showing a waveform of a high frequency applied in a conventional power split type plasma apparatus.

FIG. 6 is an explanatory view of a longitudinal section when SiO is used for a focus ring in the plasma etching apparatus of FIG. 1;

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 Plasma etching apparatus 2 Processing container 5 Susceptor 21 Upper electrode 23 Diffusion hole 26 Gas diffusion plate 29 Gas introduction pipe 34, 35, 36 Processing gas supply source 45 Exhaust means 51 High frequency power supply 54 First matching device 5 6 Second matching device W Wafer

Continued on the front page (72) Inventor Makoto Aoki 2-3-1 Nishi-Shinjuku, Shinjuku-ku, Tokyo Inside Tokyo Electron Limited (72) Inventor Isamu Wakui 2-30-30 Sumiyoshicho, Fuchu-shi, Tokyo Tokyo Electron JP-A-4-350933 (JP, A) JP-A-61-247033 (JP, A) JP-A-3-179735 (JP, A) JP-A-3-44028 (JP) JP, A) JP-A-5-326460 (JP, A) JP-A-5-114591 (JP, A) JP-A-5-283374 (JP, A) JP-A-4-308095 (JP, A) JP JP-A-5-183058 (JP, A) U.S. Pat. No. 4,662,312 (US, A) (58) Fields investigated (Int. Cl. ⁷ , DB name) H01L 21/3065 C23F 4 / 00

Claims (8)

(57) [Claims] 1. An etching method for introducing a processing gas into a processing chamber and performing a predetermined etching process on an object to be processed in a plasma atmosphere, wherein a focus ring is disposed in the processing chamber; Has a double structure of silicon dioxide and silicon monoxide inside, and at least the processing gas is a mixed gas of a fluorocarbon-based gas and an S (sulfur) -based gas containing no F (fluorine). An etching method characterized by including: 2. An etching method for introducing a processing gas into a processing chamber and performing a predetermined etching process on an object to be processed in a plasma atmosphere, wherein a focus ring is disposed in the processing chamber, and the focus ring has a surface. Has a double structure of silicon dioxide and silicon monoxide inside, wherein at least the processing gas is a fluorocarbon-based gas and an S (sulfur) -based gas that does not contain F (fluorine) but contains O (oxygen). An etching method characterized by including a mixed gas with a gas. 3. The plasma atmosphere is provided in a processing vessel.
High-frequency power to the top electrode and susceptor
And the high frequency power is disconnected from the processing vessel via a transformer.
Supplied by the separated high frequency power source on the primary side, and
Match each waveform on the secondary side through the transformer
3. The method according to claim 1, wherein
The etching method according to any one of the above . 4. A high voltage applied to the upper electrode and a susceptor.
The frequency power is 180 ° out of phase
The etching method according to claim 3, wherein the etching is performed. 5. A processing gas is introduced into a processing container, and
The object to be processed in the processing vessel is etched in a plasma atmosphere.
The above-described processing in an etching apparatus to be subjected to a chucking processing
A component in a processing container used in a container, which is composed of a surface material and an internal material, wherein the surface material is made of a passive material, and the internal material is formed when the surface material is etched.
Exposed F (fluorine) generated during the etching
Characterized by a substance that absorbs and removes
Components inside the processing vessel. 6. The surface material is silicon dioxide.
Claim: The internal substance is silicon monoxide.
6. The constituent member in the processing container according to 5. 7. The device according to claim 7, wherein the component is a focus ring.
7. The component in a processing container according to claim 5, wherein: 8. Processing in a processing chamber formed in a processing container.
Introduce gas and place it in a plasma atmosphere
8. An etching apparatus for performing a constant etching process, wherein the etching device is provided in the processing container.
Characterized in that it has components in the processing vessel of
Ching device.