JP3214460B2 - Pattern structure and manufacturing method thereof - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a pattern structure of a wiring and the like and a method of manufacturing the same, and more particularly to a pattern structure of a highly reliable wiring board suitable for mounting a semiconductor device at high density and a method of manufacturing the same.

[0002]

2. Description of the Related Art Conventionally, as a method of forming a conductor wiring,
For example, as shown in Japanese Patent Application Laid-Open No. 10-51105, a subtractive method formed by etching a copper foil formed on a substrate or a resin, and a resist pattern formed by electroless or electrolytic plating. An additive method of forming a conductor on a substrate is known. In addition, in the additive method, a conductor is formed by electrolytic plating in a resist after forming a power supply layer as described in JP-A-9-064493, and after removing the resist, the power supply layer is etched to form a wiring pattern. And a method in which a pattern is formed with a resist after activating a substrate or a resin surface and a conductor is formed by electroless plating using the resist as an insulating layer as disclosed in JP-A-6-334334. There is an additive method.

[0003]

Among the above-described wiring forming methods, a subtractive method in which a conductor is formed by etching a copper foil and a semi-additive method in which a resist is removed after forming a conductor by electrolytic plating and then removed. In both cases, vias connecting the layers (vertical paths for establishing conduction between the upper and lower wiring layers to be stacked)
Due to the mortar shape, there are disadvantages in that the connection reliability and the degree of freedom in design are small because a via cannot be formed directly above the via. Also, since the conductor pattern protrudes above the substrate or insulating resin, when forming an insulating layer on top of it and forming a conductor pattern to form multilayer wiring, it is necessary to reduce the thickness of the insulating layer and reduce the wiring step. It is difficult to realize a lost smooth state. Also,
The full additive method of forming the conductor by electroless plating has an advantage in that the thickness of the resist pattern and the thickness of the conductor can be easily made uniform, so that a smooth state without wiring steps can be obtained. . However, in order to form a resist pattern after the catalyst is adsorbed on the substrate or the insulating resin, the catalyst is removed by the resist development process, and disconnection due to non-precipitation of plating,
Alternatively, there is a problem that the adhesion to the base is reduced.
In addition, since the catalyst remains even where no conductor pattern is formed, migration of metal ions is likely to occur and insulation reliability is reduced. These tendencies become particularly noticeable in the formation of fine wiring. The present invention has been made to solve such a problem, and an object of the present invention is to provide a pattern structure capable of improving the reliability of conductor wiring and improving the degree of freedom in design, and a method of manufacturing the same. Is to do. It is another object of the present invention to provide a pattern structure capable of forming a pattern having a shape in which a via is buried by using electrolytic plating, and a method of manufacturing the same. It is another object of the present invention to provide a method of manufacturing a pattern structure that can form a smooth conductor wiring in which a recessed pattern formed of an insulating resin is embedded with a plating metal. Another object of the present invention is to manufacture a pattern structure capable of forming a fine wiring by solving the problems of the conventional full additive method such as disconnection due to non-precipitation of plating, reduced adhesion to the base, and reduced insulation reliability. It is to provide a method.

[0004]

According to the present invention, there is provided a pattern structure which is configured so as to be electrically connected by a via between conductive patterns such as wirings laminated via an insulating layer.
The via is at least a first and a second metal thin film formed by laminating on an inner surface of a via recess formed in the insulating layer corresponding to the conductor pattern and an opening peripheral region of the via recess; Third and fourth metal thin films formed by lamination on the inner surface of the portion corresponding to the via recess surrounded by the first and second metal thin films, and the inside of the recess surrounded by the third and fourth metal thin films And an inner conductor which is formed in the second metal thin film and is substantially flush with the surface of the second metal thin film facing the opening peripheral region of the via recess. A conductor pattern is formed on the surface of the second metal thin film and the surface of the internal conductor. Is formed. Further, in the present invention, the first metal thin film is preferably made of IVa
The second metal thin film is made of one or more of transition metals of Group III, Group Va, Group VIa.
Any one of transition metals of Group Ib and Group Ib and aluminum
And the third metal thin film is made of IV
the fourth metal thin film is made of one or more of transition metals of group a, group Va, group VIa;
Any one of transition metals of Group Ib and Group Ib and aluminum
Or two or more. The present invention relates to a method of manufacturing a pattern structure configured to electrically conduct via a via between conductive patterns such as wirings laminated via an insulating layer, comprising: a substrate having a via recess or a via recess. IVa group,
Any one or two of transition metals of Group Va and Group VIa
A first metal thin film of at least one of the following: a second metal thin film of at least one of two or more of transition metals of Group VIIIa and Ib and aluminum;
A third metal thin film made of any one or two or more of Group VIa transition metals and a fourth metal thin film made of any one or two or more of Group VIIIa or Ib transition metals and aluminum A first step of laminating and forming in this order, a second step of applying a resist on the fourth metal thin film, and then removing the resist at locations other than the locations corresponding to the via recesses; A third step of removing the fourth metal thin film other than the corresponding portion by etching, and removing a resist remaining at a portion corresponding to the via recess, and then removing a fourth resist formed by removing the resist.
A fourth step of depositing a plating metal by electrolytic plating in the recess surrounded by the metal thin film to flatten the inside of the recess, and etching the third metal thin film on the surface to expose the second metal thin film on the surface. A sixth step of applying a resist for forming a conductive pattern on a portion corresponding to the via recess on the second metal thin film exposed on the surface; A seventh step of forming a conductor pattern by depositing a plating metal by electrolytic plating in the conductor pattern formation area, and removing the resist for forming the conductor pattern, and then removing a portion other than the conductor pattern corresponding to the resist removal area. An eighth step of removing the first and second metal thin films by etching. The present invention relates to a method of manufacturing a pattern structure configured to electrically conduct via a via between conductive patterns such as wirings laminated via an insulating layer, comprising: a substrate having a via recess or a via recess. On the substrate with
A first metal thin film made of one or more of transition metals of group IVa, group Va, group VIa;
Any one of transition metals of Group Ib and Group Ib and aluminum
One or two or more second metal thin films, IVa
A third metal thin film made of one or more of transition metals of group III, group Va, group VIa;
a first step of laminating a fourth metal thin film made of any one or two or more of a transition metal of group b and aluminum in these order, and after applying a resist on the fourth metal thin film, A second step of removing the resist at locations other than the locations corresponding to the via recesses, a third step of removing the fourth metal thin film other than the locations corresponding to the via recesses by etching, After removing the resist remaining at the corresponding location, a fourth step of flattening the recess by depositing plating metal by electrolytic plating in the recess surrounded by the fourth metal thin film generated by the removal of the resist, and A fifth step of etching the third metal thin film to expose the second metal thin film to the surface, and forming a conductor pattern on a region of the second metal thin film exposed to the surface corresponding to the via recess. A sixth step of forming a resist pattern to be formed, a seventh step of etching away the second metal thin film in a region not covered by the resist, and removing a resist in a region corresponding to the via recess After that, an eighth step of forming a conductive pattern by depositing a plating metal on the area by electrolytic plating, and removing the first metal thin film exposed on a surface other than the area where the conductive pattern is formed by etching. And a ninth step. The method of manufacturing a pattern structure according to the present invention includes the steps of: forming a first metal thin film made of any one or more of IVa, Va, and VIa transition metals on a substrate, and a VIIIa, Ib transition metal; A first step of laminating a second metal thin film made of any one or two or more of aluminum and aluminum in this order;
A second step of forming a pattern of wiring or the like on the surface of the metal thin film by using a resist, and a third step of removing the second metal thin film excluding the pattern formation region by etching;
After the resist is removed, a fourth step of depositing a plating metal by electrolytic plating only on the second metal thin film corresponding to the resist-removed region, and the fourth step emerging on a surface other than a portion corresponding to the pattern A fifth step of forming a conductor pattern by removing the one metal thin film by etching. The method for manufacturing a pattern structure according to the present invention includes the steps of: forming a group IVa, group Va, or VIa on a substrate;
A first metal thin film made of any one or two or more of Group IV transition metals, a second metal thin film made of one or two or more of Group VIIIa or Ib transition metals and aluminum, and a Group IVa , Va and VIa transition metals, and a third metal thin film, and VIIIa and Ib transition metals and a fourth metal comprising one or more of aluminum A first step of laminating and forming a thin film in this order;
A second step of forming a pattern of wiring or the like on the surface of the metal thin film with a resist, and a third step of removing the fourth metal thin film excluding the pattern formation region by etching;
After removing the resist, a fourth step of depositing a plating metal by electrolytic plating only on the fourth metal thin film corresponding to the resist-removed region, and the fourth step emerging on a surface other than a portion corresponding to the pattern And a fifth step of forming a conductor pattern by removing the second, first, and second metal thin films by etching. The method for manufacturing a pattern structure according to the present invention includes a first step of forming a pattern portion having a concave portion on a substrate to become a wiring, a via, a pad, or the like by using an insulating resin in order to form a wiring in a predetermined shape. A first metal thin film made of one or more of transition metals of group IVa, group Va, group VIa on the surface of the substrate on which the pattern unit is formed;
A second step of laminating a second metal thin film made of one or two or more of transition metals of group IIa and Ib and aluminum in this order, and applying a resist on the surface of the second metal thin film; A third step of removing a resist other than a portion corresponding to the pattern portion; and a third step of removing the second metal thin film exposed on the surface other than the portion corresponding to the pattern portion covered with the resist by etching. Fourth step, a fifth step of removing a resist covering a portion corresponding to the pattern portion, and then forming a conductor thick by electrolytic plating in a concave portion corresponding to the pattern portion, and the first step exposed on the surface. A sixth step of removing and flattening the surface of the metal thin film and the plated conductor by polishing or etching. According to the method of manufacturing a pattern structure of the present invention, in order to form a wiring in a predetermined shape, a first pattern portion in which a portion to be a wiring, a via, a pad, or the like becomes concave on a substrate is formed of an insulating resin.
A first metal thin film made of one or more of transition metals of group IVa, group Va, group VIa on the surface of the substrate on which the pattern portion is formed, and VII.
A second metal thin film comprising at least one of a transition metal of Group Ia or Group Ib and aluminum, and IV
a third metal thin film comprising one or more of transition metals of group a, group Va, group VIa;
A second step of laminating and forming a fourth metal thin film made of one or two or more of a group Ib transition metal and aluminum in this order, and applying a resist on the surface of the fourth metal thin film; A third step of removing the resist at a portion other than the portion corresponding to the pattern portion, a fourth step of removing the fourth metal thin film exposed on the surface other than the portion corresponding to the pattern portion by etching, and the pattern portion After removing the resist covering the portion corresponding to the above, a fifth step of thickly forming a conductor by electrolytic plating on the concave portion corresponding to the pattern portion, and the third step on the surface.
A sixth step of removing and planarizing the surface portions of the second and first metal thin films and the plated conductor by polishing or etching. According to the method for manufacturing a pattern structure of the present invention, a first pattern portion in which portions to become wirings, vias, pads, and the like become concave on a substrate is formed of an insulating resin.
A metal thin film made of one or more of IVa, Va, and VIa transition metals on a surface of the substrate on which the pattern portion is formed, and a catalytic metal thin film for electroless plating A second step of forming a stack in this order, and after applying a resist on the surface of the catalyst metal thin film,
A third step of removing the resist at a portion other than the portion corresponding to the pattern portion, and etching the metal thin film and the catalyst metal thin film on the surface other than the portion corresponding to the pattern portion covered with the resist; A fourth step of removing the resist by polishing or polishing, and after removing the resist at a portion corresponding to the pattern portion, flattening the concave portion by thickening a plating metal by electroless plating on the concave portion of the catalytic metal thin film. And a fifth step.

According to the pattern structure of the present invention, the via is formed so as to have a flat upper surface and to be buried so as to coincide with the upper surface of the second metal thin film exposed on the insulating layer. Can be integrated, and highly reliable interlayer connection can be realized. According to the pattern structure manufacturing method of the present invention, a metal is deposited by electrolytic plating in a recess surrounded by the first to fourth metal thin films corresponding to the vias of the substrate, and the metal is deposited on the deposited metal. By depositing the metal corresponding to the upper conductor pattern by electrolytic plating, vias including the first to fourth metal thin films and the internal conductor (deposited metal) are embedded in the metal forming the upper conductor pattern. Formed in a state. For this reason, the embedded via and the upper conductor pattern can be integrated, and highly reliable interlayer connection can be achieved. According to the pattern structure manufacturing method of the present invention, a metal is deposited by electrolytic plating in a recess surrounded by the first to fourth metal thin films corresponding to the vias of the substrate,
By depositing a metal corresponding to the upper conductor pattern on the deposited metal by electrolytic plating, a via including the first to fourth metal thin films and the internal conductor (deposited metal) is formed on the upper conductor pattern. Is formed in a buried state with respect to the metal that forms For this reason, the embedded via and the upper conductor pattern can be integrated, and highly reliable interlayer connection can be achieved. According to the method of manufacturing a pattern structure of the present invention, after forming two layers of a first metal thin film and a second metal thin film on a substrate, a resist pattern is formed and etched to form a wiring of a required pattern. By leaving the second metal thin film as the application metal and leaving the other surface as the first metal thin film as the adhesion application metal, the metal forming the internal conductor at a location other than the second metal thin film as the wiring application metal Precipitation, that is, deposition of plating metal by electrolytic plating can be suppressed, and plating metal can be selectively deposited in accordance with a pattern. According to the method of manufacturing a pattern structure of the present invention, the first, second, third, and fourth patterns are formed on the substrate.
After laminating and forming the four layers of the metal thin film, a resist pattern is formed and etched to leave a fourth metal thin film as a wiring use metal of a required pattern, and the other surface as a metal for adhesion use as a fourth metal thin film. By using a three-metal thin film,
It is possible to suppress the deposition of the metal constituting the inner conductor at a place other than the fourth metal thin film as a metal for wiring, that is, the deposition of the plating metal by electrolytic plating, and selectively deposit the plating metal corresponding to the pattern. Can be. According to the method of manufacturing a pattern structure of the present invention, in order to form a wiring in a predetermined shape, a wiring, a via, a portion to be a pad, etc., is formed on a substrate on which a pattern portion having a concave shape is formed by an insulating resin. After laminating the first metal thin film and the second metal thin film, a resist pattern is formed and etched to leave a second metal thin film as a metal used for wiring of a necessary pattern, and to be formed in a concave portion corresponding to the pattern portion. By thickening the conductor by electrolytic plating, a plating metal is deposited where a concave pattern is formed by the insulating resin, and a wiring or the like can be formed while maintaining the pattern shape. After removing and depositing the first metal thin film on the surface by polishing or etching, a smooth fine wiring can be formed by polishing the surface. According to the method of manufacturing a pattern structure of the present invention, in order to form a wiring in a predetermined shape, a wiring, a via, a portion to be a pad, etc., is formed on a substrate on which a pattern portion having a concave shape is formed by an insulating resin. After laminating the first, second, third, and fourth metal thin films, a resist pattern is formed and etched to leave a fourth metal thin film as a metal for wiring of a required pattern, corresponding to a pattern portion. By thickening the conductor by electroplating in the recessed portion to be formed, a plating metal is deposited where the pattern is formed in a concave shape by the insulating resin, and a wiring or the like can be formed while maintaining the pattern shape. And the first, second,
After removing and depositing the third metal thin film and the surface portion of the plated conductor by polishing or etching, a smooth fine wiring can be formed by polishing the surface. According to the method of manufacturing a pattern structure of the present invention, a metal thin film and a catalytic metal thin film for electroless plating are laminated on a substrate on which a concave pattern portion such as a via is formed by an insulating resin, and after applying a resist, The resist other than the pattern part is removed, the metal thin film and the catalyst metal thin film that are exposed on the surface other than the pattern part where the resist remains are removed, and the resist of the pattern part is further removed. Since the metal is thickened at the place, the catalytic metal thin film and the metal thin film for electroless plating remain in the concave part of the pattern part, so that it does not cause disconnection due to non-precipitation or decrease in adhesion to the base and other than the pattern part Since the catalyst-removing metal thin film and the metal thin film have been removed from the portion, the migration of metal ions does not occur and the reliability of insulation is maintained.

[0006]

DESCRIPTION OF THE PREFERRED EMBODIMENTS First Embodiment Hereinafter, an embodiment of a method for manufacturing a pattern structure according to the present invention will be described, and at the same time, a pattern structure will be described.
FIG. 1 is a cross-sectional configuration diagram illustrating a pattern structure manufactured by the method for manufacturing a pattern structure according to the first embodiment. The pattern structure shown in FIG. 1 includes a substrate 11, a lower pattern 19 formed on the substrate 11, an insulating resin 12 formed on the substrate 11, first to fourth metal thin films 13,
It has a conductor thin film composed of four layers of 4, 15, and 16 and the like. That is, this pattern structure is formed by a lower pattern
And the upper conductor 18 is electrically connected by the via 9.
The first and second metal thin films 13 and 14 formed by laminating the inner surface of the via recess 10 and the opening peripheral region of the via recess 10 corresponding to the first and second metal thin films 1
Third and fourth metal thin films 15, 1 formed by lamination on the inner surfaces of the portions corresponding to the via recesses 10 surrounded by 3, 14.
6 and a substantially same plane as the surface of the second metal thin film 14 buried in the recess surrounded by the third and fourth metal thin films 15 and 16 of this stack and facing the opening peripheral region of the via recess 10. An inner conductor (plated metal) 17 which is formed on the surface of the second metal thin film 14 and the surface of the inner conductor 17.
8 (plated metal) is formed. In addition, the first metal thin film 13 constituting the four-layer conductor thin film of FIG.
The second metal thin film 14 is made of one or more of transition metals of Group VIIIa and Group VIa.
The third metal thin film 15 is made of one or more of a transition metal of the group IV and aluminum.
Any one or two of transition metals of Group Va and Group VIa
And the fourth metal thin film 15 is made of Group VIIIa,
It is composed of any one or more of Group Ib transition metals and aluminum.

FIGS. 2 (a) to 2 (e) and 3 (a) to 3 (k) are cross-sectional views of a pattern structure for explaining the first embodiment of the present invention. Since there is a via, there is usually a pattern under the via, but FIG.
In FIG. 3, this lower pattern is omitted. First, as shown in FIG.
A substrate 20 of alumina, silicon, or the like is prepared, and an insulating resin 21 is formed thereon, for example, by a spin coating method in a liquid state,
Die coating, curtain coating, printing, etc.
After a treatment such as drying is performed to harden the insulating resin, a via is formed by a photolithography process or the like for a photosensitive resin or a laser processing method for a non-photosensitive resin. At this time,
Vias and circuits in lower layers may already be formed in the substrate 20 itself.

Next, as shown in FIG. 2B, a first metal thin film 22, a second metal thin film 23, a third metal thin film 24, and a fourth metal thin film 25 are formed on the insulating resin 21 in which the via is formed. The layers are sequentially formed using a sputtering method, an evaporation method, a CVD method, or the like (corresponding to the first step in the claims). As an example of the first metal thin film 22, transition metals of the IVa group, Va group, VIa group such as chromium, titanium, molybdenum, niobium, and tantalum, and alloys thereof are used in order to mainly consider adhesion to the insulating resin 21. Are suitable. Since the second metal thin film 23 mainly considers making the potential at the time of plating uniform,
Copper and silver having low electric resistance are most suitable, but aluminum and palladium, a transition metal of Group VIIIa and Group Ib,
Gold, platinum, etc. can be used. Further, in the third metal thin film 24, transition metals of the IVa group, the Va group, the VIa group such as titanium, niobium, tantalum, tungsten, and chromium and alloys thereof are suitable in consideration of a metal having acid resistance in the process. ing. As the fourth metal thin film 25, copper or silver having a small electric resistance is optimal, but aluminum and palladium, gold, platinum and the like, which are transition metals of VIIIa group and Ib group, may be used.

Next, as shown in FIG. 2 (c), a resist 26 is formed on the fourth metal thin film 25. If the resist 26 is liquid like the insulating resin 21, a spin coating method, a die coating method, a curtain coating method, a printing method, etc. In the case of a dry film, lamination is performed by lamination or the like. Next, as shown in FIG. 2D, the resist 26 is removed by performing an etching step or an exposure and development step of a photolithographic process if the photosensitive resin is a positive type photosensitive resin, and the fourth resist as a conductor portion is removed.
The resist 26 is left only in the pattern of the metal thin film 25.
The steps in FIGS. 2C and 2D correspond to the second step in the claims. When using a photolithography process, there is no need for a photomask such as a chromium mask as to a step having a small opening area of the pattern as a step at the time of exposure, but the resist 26 is left where the opening area is large. Requires a photomask.

Next, as shown in FIG. 2E, the fourth metal thin film 25 of the surface layer is etched by an acid treatment or the like (corresponding to a third step in the claims). Thereafter, as shown in FIG. 3A, the resist 26 remaining in the conductor pattern portion (the fourth metal thin film 25) is removed with an organic solvent or the like.
Through these steps, the resistance value of the metal thin film inside and on the surface of the conductor pattern changes, and the deposition of the plating metal 27 can be controlled as described below.

Next, as shown in FIG. 3B, electrolytic plating is performed to deposit a plating metal 27 on the conductor. Copper is the most suitable for the plating metal 27 from the viewpoint of cost as a wiring application, but silver having a small resistance value, gold, iron, nickel, tin, platinum, palladium, which can be subjected to electrolytic plating,
Metals such as zinc and alloys are also possible. FIG. 3 (a),
Step (b) corresponds to the fourth step in the claims. At this time, the third metal thin film 24 exposed on the surface has a higher resistance and is smoother than the portion where the fourth metal thin film 25 remains, so that the plating metal 27 is hardly deposited. It has become. Therefore, in this state, plating is preferentially deposited on the portion where the fourth metal thin film 25 is attached. Here, as shown in FIG. 3C, the third metal thin film 24 exposed on the surface is removed by etching, and the second metal thin film 23 is exposed on the surface (corresponding to a fifth step in the claims). .

Next, as shown in FIG. 3D, if the resist 28 is in a liquid state on the second metal thin film 23, the resist 28 is formed by a spin coating method, a die coating method, a curtain coating method, a printing method, or the like. Then, they are laminated by lamination or the like, and a wiring pattern is formed using a photolithography process (corresponding to the sixth step in the claims). And FIG.
As shown in (e), after forming the wiring pattern, the pattern portion is buried with a plating metal 29 by electrolytic plating (corresponding to a seventh step in the claims). Thereafter, as shown in FIG. 3F, the resist 28 is removed with an organic solvent or the like, and the unnecessary second metal thin film 23 other than the upper pattern portion and the first metal thin film 23 are removed.
The metal thin film 22 is removed by etching (corresponding to an eighth step in the claims).

Thus, a pattern in which vias are buried can be formed. By repeating this process, a multilayer wiring board can be manufactured. Vias are embedded,
In addition, since it is integrated with the pattern formed on the upper portion, connection reliability is improved, and a via can be formed immediately above the via. Also, since thin film formation can be performed for two layers at a time,
The number of steps for forming a multi-layer wiring having a buried via can be reduced.

(First Embodiment) Next, a first embodiment will be described with reference to the drawings. The first example corresponds to the first embodiment. 2 (a) to 2 (e), FIG.
With reference to (a) to (e), a method of manufacturing a pattern structure having embedded vias according to the first embodiment will be described.
A glass fiber reinforced organic substrate is used as the substrate 20, and an insulating resin 2
No. 1 is a product of Nippon Steel Chemical Co., Ltd., whose main raw material is an epoxy acrylate resin having a negative type fluorene skeleton.
259PA was used. An epoxy acrylate resin having a fluorene skeleton is disclosed in Japanese Patent Application Laid-Open No. 7-48424 as an optical use. This negative type epoxy acrylate resin is coated with a spin coater for 10 minutes.
and dried at 75 ° C for 40 minutes.
After forming a via by performing exposure of 00 mJ / cm2 for 4 minutes with a 1% aqueous solution of sodium carbonate, epoxy acrylate resin remaining in the pattern is removed by an oxygen plasma asher at 45 ° C. for 2 minutes. Finally, the epoxy acrylate resin was cured by heating at 200 ° C. for 30 minutes in a nitrogen atmosphere (FIG. 2).
(A)). Next, the first metal thin film 22 and the second metal thin film 2
Third, the third metal thin film 24 and the fourth metal thin film 25 are formed by the sputtering method.
And titanium as the second metal thin film 23 and the fourth metal thin film 25 were deposited in the order shown in FIG. First, as an example of sputtering conditions, 1 × 10-7T
orr and then 4 × 10
-3 Torr, the first metal thin film 22 and the third
For both of the metal thin films 24, the deposition conditions of titanium were set at an applied current value of 5 A and a tray speed of 300 mm / min.
The thickness of titanium is 200 nm. The second metal thin film 23 is deposited twice at a copper deposition condition of an applied current value of 4 A and a tray speed of 300 mm / min.
In No. 5, the copper deposition conditions were an applied current value of 4 A and a tray speed of 300 mm / min. The thicknesses of copper are 440 nm and 220 nm, respectively. Here, the reason why the second metal thin film 23 is made thicker is to prevent the titanium of the lowermost first metal thin film 22 from being etched when performing the titanium etching of the third metal thin film 24 in a subsequent step. . P-LA900PM manufactured by Tokyo Ohka Kogyo Co., Ltd. was applied as a positive photoresist to the resist 26 by a spin coater to a thickness of 10 μm.
Minutes after drying, without using a photomask, 240 mJ /
By performing exposure for 2 cm2 and dip development for 6 minutes with an alkali developing solution, a state was obtained in which the resist 26 remained only inside the via (FIGS. 2C and 2D).

After the copper sputtered film of the fourth metal thin film 25 is removed by etching, the resist 26 inside the via is removed by washing with an organic solvent (FIG. 2E). After this,
The resist 26 remaining inside the via was completely removed by an oxygen plasma asher at 45 ° C. for 4 minutes (FIG. 3).
(A)). This step also aims at oxidizing the titanium of the third metal thin film 24 exposed on the surface. By oxidizing titanium in this step, the effect of increasing the resistance and increasing the insolubility in acid can be expected. The titanium covered with copper in the pattern portion was not oxidized, and the copper thin film of the second metal thin film 23 did not increase in resistance. The substrate in this state was subjected to electrolytic copper plating in a sulfuric acid bath at 0.2 A for 20 minutes, and the via was filled with copper plating (FIG. 3B). After the copper plating, the titanium sputtered film of the third metal thin film 24 exposed on the surface is removed by etching, and the copper sputtered film of the second metal thin film 23 is exposed on the surface (FIG. 3C). A resist 28 is formed on the copper sputtered film.
Is used to form an upper pattern. The resist 28 at this time is the same as the above-described resist 26, using P-LA900PM manufactured by Tokyo Ohka Kogyo Co., Ltd., applied with a spin coater to a thickness of 10 μm, dried at 90 ° C. for 30 minutes, and then drawn an upper pattern. 6 using a certain photomask
An upper pattern was obtained by performing exposure of 00 mJ / cm 2 and dip development for 6 minutes with an alkali developing solution (FIG. 3).
(D)). After forming the upper pattern, electrolytic copper plating in a sulfuric acid bath was performed at 1.2 A for 12 minutes to form an upper conductor pattern (FIG. 3E). Thereafter, the resist 28 is removed with an organic solvent or the like, and an oxygen plasma asher is set at 45 ° C.
The resist was completely removed under the condition of 3 minutes.
Finally, the sputtered films of copper of the second metal thin film 23 and titanium of the first metal thin film 22 other than the conductor are removed by etching (FIG. 3F). As a result, a pattern having embedded vias can be formed. By repeating this process, a multilayer wiring board can be manufactured.

In general, when a photolithography process is used to embed plating, as a step of leaving a resist in a pattern, it is necessary to perform an operation of removing a resist only in a necessary pattern portion in accordance with a resin pattern and embedding by plating. However, according to the first embodiment described above,
A state is obtained in which the resist 26 remains only inside the via without using a photomask. As described above, depending on the pattern size, a mask is not required depending on the conditions, and it is possible to bury the resist only in the necessary pattern portion by plating.
Therefore, the resist can be left in a necessary portion without considering a deviation from the mask pattern due to warpage of the substrate or the like, and plating on an unnecessary portion can be prevented.

(Second Embodiment) The difference between the second embodiment and the first embodiment is in the method of manufacturing the upper pattern after the via is buried. FIGS. 4A to 4C and 5A to 5C show an example of upper pattern formation in a manufacturing process of a pattern structure having embedded vias according to the second embodiment of the present invention. FIG. Hereinafter, a description will be given based on a second embodiment of the present invention. FIGS. 4A to 4C show a method of manufacturing the upper pattern.
This will be described with reference to FIGS. Vias are manufactured by the method of the first embodiment described above, that is, in the same manner as the steps of FIGS. 2A to 3E and FIGS. 3A to 3C. Then, a resist 3 is formed on the substrate (FIG. 4A) from which the third metal thin film has been removed by etching.
3 is a liquid, a spin coating method, a die coating method, a curtain coating method, a printing method, etc., or a dry film is laminated by a laminating method, and an upper pattern is formed using a photolithographic process (FIG. 4B). (Corresponding to the sixth step in the claims).

After the pattern is formed, the second metal thin film 32 not covered with the resist 33 is removed by etching with an acid treatment or the like, and then the resist 33 is removed with an organic solvent or the like (see FIG. 4C, FIG. 5 (a)) (corresponding to the seventh step in the claims) By these steps, the resistance value of the metal thin film inside and on the surface of the conductor pattern changes, and the deposition of the plating metal 34 can be controlled. Next, the pattern portion is buried by electroplating with a plating metal 34 (FIG. 5B) (corresponding to the eighth step in the claims). However, it is also possible to use silver or a metal such as gold, iron, nickel, tin, platinum, palladium, zinc or the like, which can be electroplated, which has a small resistance value. The thin metal film 31 and the second metal thin film 3
Since the resistance is higher and smoother than in the area where No. 2 remains, the plating metal 34 is hardly deposited. In this state, plating is preferentially deposited where the second metal thin film 32 is attached.

After that, the first metal thin film 31 in the unnecessary portion
Is removed by etching (FIG. 5C) (corresponding to the ninth step of the claims). In the case of electrolytic plating, if the resistance of the first metal thin film is high and the deposition of plating is biased,
By forming a low-resistance metal thin film under the first metal thin film capable of equalizing electric charges, it is possible to eliminate bias in plating. In this case, the structure of the power supply layer formed first must be at least five layers or more. As in the first embodiment, a multilayer wiring board can be manufactured by repeating this process.

(Second Embodiment) A second embodiment will be described with reference to the drawings. The second example corresponds to the second embodiment. 4 (a) to 4 (c), FIG. 5 (a)
A method of manufacturing a pattern structure having embedded vias according to a second embodiment will be described with reference to FIGS. The via is buried under the same conditions as those described in the first embodiment,
The description will start from the substrate from which the third metal thin film on the surface has been removed. A substrate in which vias are buried and the third metal thin film is removed is prepared (FIG. 4A), and a resist 33 is applied thereon by a spin coater to a thickness of 10 μm.
After drying at 0 ° C. for 30 minutes, exposure is performed at 600 mJ / cm 2 using a photomask of the upper pattern, and dip development is performed for 6 minutes with an alkaline developer to form an upper resist pattern (FIG. 4B). . The resist 33 used here is P-LA900PM manufactured by Tokyo Ohka Kogyo Co., Ltd., which is a positive photoresist.

After removing the copper sputtered film of the second metal thin film 32 which is not covered with the resist 33 by etching and exposing the titanium of the first metal thin film 31 to the surface,
The resist 33 is removed by washing with an organic solvent (see FIG.
(C), FIG. 5 (a)). Thereafter, the remaining resist 33 was completely removed by an oxygen plasma asher at 45 ° C. for 4 minutes. This step is also intended to oxidize the titanium on the surface. Titanium covered with copper in the pattern portion is not oxidized. In this step, by oxidizing titanium, an effect of increasing the resistance and increasing the insolubility in acid can be expected. The substrate in this state was subjected to electrolytic copper plating in a sulfuric acid bath at 1.2 A for 24 minutes to deposit copper plating on the pattern portion (FIG. 5B). Thereafter, a pattern can be formed by etching the titanium (FIG. 5C).

(Third Embodiment) FIGS. 6 (a) to 6 (d) and FIGS. 7 (a) to 7 (c) are cross-sectional structures of a pattern structure for explaining a third embodiment of the present invention. FIG. Hereinafter, a description will be given based on a third embodiment of the present invention. An organic substrate, a substrate 41 of ceramic, alumina, silicon, or the like is prepared (FIG. 6A), and a first metal thin film 42 is formed thereon by using a sputtering method, an evaporation method, a CVD method, or the like. As an example of the metal, titanium and chromium are most suitable because adhesion to a resin is mainly considered. However, an IVa group, a Va group, a niobium, a tantalum, a tungsten or the like.
Group VIa transition metals and their alloys are also possible. Further, a second metal thin film 43 is similarly formed on this thin film by using a sputtering method, a vapor deposition method, a CVD method or the like (FIG. 6B) (corresponding to the first step in the claims).
As the metal, copper or silver having a small electric resistance is optimal because of electroplating. However, aluminum and palladium, gold, platinum and the like, which are transition metals of the VIIIa group and the Ib group, may be used. In forming the metal thin film, an insulating resin layer may be smoothly formed on the substrate.

A pattern or the like is formed on this thin film by a resist 44 (FIG. 6C) (corresponding to a second step in the claims), and then etching is performed to remove unnecessary portions of the second metal thin film 43. It is removed (FIG. 6D) (corresponding to the third step in the claims). After removing the resist 44 with an organic solvent or the like (FIG. 7A), electrolytic plating is performed to deposit a plating metal 45 on the wiring pattern formed by the second metal thin film 43 (FIG. 7B). It corresponds to the fourth step in the claims). This is because the resistance is different and the surface is smooth at the portion where the second metal thin film 43 remains and where the first metal thin film 42 is exposed, so that the deposition of the plating metal can be controlled. That's why.
Copper is the most suitable for this plating metal in terms of cost for wiring applications, but silver or metal such as gold, iron, nickel, tin, platinum, palladium, zinc, etc., which can be electroplated with low resistance, can also be used. It is. Finally, a pattern is manufactured by removing the first metal thin film 42 by etching (FIG. 7C) (corresponding to the fifth step in the claims). According to the third embodiment described above, two layers of a first metal thin film and a second metal thin film are formed on a substrate by lamination, and a resist pattern is formed and etched to form a wiring of a necessary pattern. By leaving the second metal thin film as the application metal and leaving the other surface as the first metal thin film as the adhesion application metal, the metal constituting the internal conductor at a location other than the second metal thin film as the wiring application metal Precipitation, that is, deposition of the plating metal by electrolytic plating can be suppressed, and the plating metal can be selectively deposited corresponding to the pattern.

(Third Embodiment) A third embodiment of the present invention will be described with reference to the drawings. The third example corresponds to the third embodiment. A method of manufacturing a pattern structure according to the third embodiment will be described with reference to FIGS. Using a glass fiber reinforced organic substrate as the substrate 41, the first metal thin film 42 and the second metal thin film 43 were sequentially deposited with titanium as the first metal thin film 42 and copper as the second metal thin film 43 by the sputtering method ( FIGS. 6A and 6B). As an example of sputtering conditions,
First, after evacuating to 1 × 10 −7 Torr,
Under the condition of 4 × 10 −3 Torr with argon, the deposition conditions of titanium were set to an applied current value of 5 A and a tray speed of 300.
mm / min, the deposition conditions of copper were set at an applied current value of 4 A and a tray speed of 300 mm / min.
Deposited in thicknesses of 00 nm and 220 nm.

The resist 44 is coated with P-LA900PM of Tokyo Ohka Kogyo Co., Ltd. as a positive type photoresist by a spin coater to a thickness of 10 μm.
After drying at 30 ° C. for 30 minutes, exposure was performed at 600 mJ / cm 2 using a photomask of a wiring pattern, and 6 hours with an alkali developing solution.
By performing dip development for a minute, a conductor resist pattern is formed (FIG. 6C). After removing the copper sputtered film of the second metal thin film 43 which is not covered with the resist 44 by etching and exposing the titanium of the first metal thin film 42 to the surface, the resist 44 is removed by washing with an organic solvent (FIG. 6 ( d), FIG. 7 (a)). Thereafter, the remaining resist 44 was completely removed by an oxygen plasma asher at 45 ° C. for 4 minutes. This step is also intended to oxidize the titanium on the surface.
Titanium covered with copper in the pattern portion is not oxidized. In this step, by oxidizing titanium, an effect of increasing the resistance and increasing the insolubility in acid can be expected. The substrate in this state was subjected to electrolytic copper plating in a sulfuric acid bath at 1.2 A for 24 minutes to deposit copper plating as the plating metal 45 on the conductor (FIG. 7).
(B)). Thereafter, a pattern can be formed by etching the titanium (FIG. 7C).

(Fourth Embodiment) In the third embodiment, there is a problem that the pattern shape of the wiring or the like changes when the conductor is given a thickness. The fourth embodiment described below can solve this problem. The difference between the fourth embodiment and the third embodiment is that a wiring or the like can be formed in a predetermined shape by forming a concave pattern with an insulating resin before forming a metal thin film.

FIGS. 8A to 8E and FIGS. 9A to 9D are cross-sectional views of a pattern structure for explaining a fourth embodiment of the present invention. Hereinafter, description will be made based on a fourth embodiment of the present invention. A substrate 51 such as an organic substrate, ceramic, alumina, or silicon is prepared, and an insulating resin 52 is formed thereon, for example, by a spin coating method, a die coating method, a curtain coating method, a printing method, etc.
If it is a dry film, it is laminated by lamination or the like (FIG. 8A). Next, after performing processing such as drying to harden the insulating resin, a pattern of a conductor portion is formed by a photolithography process or the like for a photosensitive resin or a laser processing method for a non-photosensitive resin (FIG. 8 ( b)) (corresponding to the first step in the claims). In the case of the photolithography process, the wiring pitch and via diameter that can be formed are determined by the resolution of the insulating resin 52 used here, and in the case of the laser processing method, the type of laser or the like.

A first metal thin film 53 is formed on the patterned insulating resin 52 by using a sputtering method, an evaporation method, a CVD method, or the like. As an example of this metal, titanium and chromium are optimal for considering adhesion with resin, but niobium,
IVa group, Va group, VI such as tantalum and tungsten
Group a transition metals and their alloys are also possible. Further, a second metal thin film 54 is similarly formed on this thin film by a sputtering method, a vapor deposition method, a CVD method or the like (FIG. 8).
(C)) (corresponding to the second step in the claims). As the metal thin film, copper or silver having a small electric resistance is optimal, but aluminum and palladium, gold, platinum and the like, which are transition metals of the VIIIa group and the Ib group, may be used. Next, a resist 55 is laminated thereon by a spin coating method, a die coating method, a curtain coating method, a printing method or the like if it is liquid like the insulating resin, or by a lamination or the like if it is a dry film (FIG. 8D). ). This resist 55
Is exposed only in the conductor portion pattern by performing an etching step or a photolithographic process of exposure and development if it is a positive photosensitive resin (FIG. 8E).
When using the photolithography process, as a step at the time of exposure,
A photomask such as a chrome mask is not particularly necessary for a pattern having a small opening area, but a photomask is required where the opening area is large in order to leave the resist 55. The steps in FIGS. 8D and 8E correspond to the third step in the claims. next,
The second metal thin film 54 in the surface layer is etched by an acid treatment or the like (FIG. 9A) (corresponding to the fourth step in the claims). After that, the resist 55 remaining in the conductor pattern portion is removed with an organic solvent or the like (FIG. 9B). By these steps, the resistance value of the metal thin film inside and on the surface of the conductor pattern changes, and the deposition of the plating metal 56 can be controlled. Next, electrolytic plating is performed to deposit a plating metal 56 on the conductor pattern portion (FIG. 9C). Copper is the most suitable for this plating metal in terms of cost for wiring applications. But it is possible. FIG. 9 (b),
Step (c) corresponds to the fifth step in the claims. At this time, the first metal thin film 53 on the surface has a higher resistance and is smoother than the portion where the second metal thin film 54 remains, so that the plating metal 56 is hardly deposited. It has become. Due to this state, the second
Plating is preferentially deposited on the portion where the metal thin film 54 is provided.

Finally, the first metal thin film 53 and the plating metal 56 of the conductor on the surface are ground using a polishing method such as buff polishing or the like to make them smooth (FIG. 9D). 6 steps). If the first metal thin film 53 is a metal that can be etched, it may be removed by etching. By this step, a pattern having a smooth surface can be formed. As described above, in the fourth embodiment, since a concave pattern is formed with an insulating resin before forming a metal thin film, wirings and the like can be formed in a predetermined shape, and when a conductor is given a thickness. It is possible to solve the problem of the third embodiment in which the pattern shape of the wiring or the like changes.

FIG. 10 is a sectional view showing an example of a process for forming a multilayer wiring using the above-described fourth embodiment. After the first layer wiring is formed by the process of the fourth embodiment (FIG. 10A), vias connecting the layers are formed by the insulating resin 66 (FIG. 10B). Further, a second-layer conductor pattern is formed of the insulating resin 67 (FIG. 1).
0 (c)), the same steps as those of the first layer are repeated,
A conductor embedded with the plating metal 65 is formed (FIG. 10).
(D)). If necessary, only vias can be formed.

By using such a means, each wiring layer can be smoothed, and when forming a multilayer wiring layer, it is possible to prevent the wiring pattern or the like from being displaced or distorted due to unevenness of the base. In addition, since the surface is flat, the insulating layer, which had to be applied thicker to obtain a smooth surface in the past, can be formed with a minimum necessary film thickness, and the diameter of the via can be reduced. . Further, since the via is filled with plating in the process, connection reliability is improved, and the via can be formed immediately above the via. When the wiring is formed in multiple layers as described above, there is an advantage that the number of steps is reduced as compared with the conventional semi-additive method.

(Fourth Embodiment) A fourth embodiment of the present invention will be described with reference to the drawings. The fourth example corresponds to the fourth embodiment. The pattern manufacturing method according to the fourth embodiment will be described with reference to FIGS. 8A to 8E and 9A to 9D. A glass fiber reinforced organic substrate was used as the substrate 51, and V-259PA manufactured by Nippon Steel Chemical Co., Ltd., whose main material was an epoxy acrylate resin having a negative fluorene skeleton, was used as the insulating resin 52. This resin was applied to a thickness of 10 μm using a spin coater,
After drying at 5 ° C. for 40 minutes, exposure to 200 mJ / cm 2 and dip development with 1% aqueous sodium carbonate solution for 4 minutes to obtain a wiring pattern, the epoxy acrylate resin remaining in the pattern is removed by 45%. The mixture was removed by an oxygen plasma asher at 2 ° C. for 2 minutes, and finally, the epoxy acrylate resin was cured by heating at 200 ° C. for 30 minutes in a nitrogen atmosphere (FIGS. 8A and 8B).

Next, the first metal thin film 53 is formed by sputtering.
, And copper as the second metal thin film 54 were sequentially deposited. As an example of sputtering conditions, 1 × 1
After evacuating to 0-7 Torr, the deposition conditions of titanium were set to an applied current value of 5 A and a tray speed of 300 mm / min in a pressure of 4 × 10 −3 Torr with argon.
Then, set the copper deposition conditions to 4 A for the current value and 3 for the tray speed.
200 mm, 2 mm
It was deposited to a thickness of 20 nm (FIG. 8 (c)). P-LA900PM of Tokyo Ohka Kogyo Co., Ltd. was used as a positive photoresist on the resist 55, applied with a spin coater to a thickness of 10 μm, dried at 90 ° C. for 30 minutes, and then 240 mJ / cm 2 without using a photomask. Exposure and dip development with an alkali developing solution for 6 minutes resulted in a state in which the resist 55 remained only in the pattern portion (FIGS. 8D and 8E).

After the copper sputter film of the second metal thin film 54 is removed by etching, the resist 55 inside the pattern is removed.
Is removed by washing with an organic solvent (FIG. 9 (a),
(B)). Thereafter, the resist 55 remaining inside the pattern was completely removed by an oxygen plasma asher at 45 ° C. for 4 minutes. This step is also intended to oxidize the titanium on the surface. Titanium covered with copper in the pattern portion is not oxidized. By oxidizing titanium in this step, the effect of increasing the resistance and increasing the insolubility in acid can be expected. The substrate in this state was subjected to electrolytic copper plating in a sulfuric acid bath at 1.2 A for 24 minutes, and the conductor was filled with copper plating (FIG. 9C). Thereafter, by performing buffing at the number 1000, wiring with a smooth surface was formed (FIG. 9).
(D)). During plating, copper plating also precipitates on the oxidized titanium surface on the grains, but it has been confirmed that it can be completely removed by buffing or etching titanium, or by combining the two processes.

As in the case of the first embodiment, when a photolithography process is generally used for embedding plating, a step of leaving a resist in a pattern is performed only in a necessary pattern portion in accordance with a resin pattern. It is necessary to perform the work of extracting and embedding by plating. However, according to the above-described fourth embodiment, similarly to the first embodiment, the resist 5 is formed only inside the via without using a photomask.
5 remains. As described above, depending on the pattern size, a mask is not required depending on the conditions, and it is possible to bury the resist only in the necessary pattern portion by plating. Therefore, the resist can be left in a necessary portion without considering a deviation from the mask pattern due to warpage of the substrate or the like, and plating on an unnecessary portion can be prevented.

(Fifth Embodiment) In the third and fourth embodiments, when the resistance of the metal used as the metal thin film is increased, the potential at the time of plating becomes nonuniform, and the plating of the conductor is performed. There is a possibility that a problem that variation occurs in the data may occur. The fifth embodiment described below can solve this problem. The difference between the fifth embodiment and the third and fourth embodiments is that the composition of the metal thin film formed on the insulating resin is changed, and the other steps are the same. Further, by repeating the steps as in the fourth embodiment, a multilayer wiring board can be formed.

FIGS. 11 (a) to 11 (d) and FIGS. 12 (a) to 12 (e) are cross-sectional views of a pattern structure for explaining a fifth embodiment of the present invention. The fifth of the present invention
A description will be given based on the embodiment. FIG. 11 to be described next
Steps other than the step (c) are the same as the steps in FIGS. 8A to 8E and FIGS. 9A to 9D showing the above-described fourth embodiment, and a description thereof will be omitted. I do. The description of forming the metal thin film will be described with reference to FIG. A first metal thin film 73, a second metal thin film 74, a third metal thin film 75, and a fourth metal thin film 76 are sequentially formed on the patterned insulating resin by using a sputtering method, an evaporation method, a CVD method, or the like. ). As an example of the first metal thin film 73, transition metals of IVa group, Va group, VIa group such as chromium, titanium, molybdenum, niobium, and tantalum and alloys thereof are suitable in order to mainly consider adhesion to a resin. I have. Second metal thin film 7
For No. 4, copper and silver having a small electric resistance are optimal because mainly taking account of making the potential at the time of plating uniform, but palladium, gold and platinum of aluminum and transition metals of VIIIa group and Ib group are preferred. It doesn't matter. Further, in the third metal thin film 75, transition metals of the IVa group, the Va group, the VIa group such as titanium, niobium, tantalum, tungsten, and chromium, and alloys thereof are suitable in consideration of a metal having acid resistance in the process. ing. As the fourth metal thin film 76, copper or silver having a small electric resistance is optimal, but aluminum or a transition metal of group VIIIa or Ib, such as palladium, gold, or platinum, may be used. As described above, in the fifth embodiment, the first to fourth metal thin films are sequentially laminated as metal thin films, so that the resistance of the metal used as the metal thin film can be reduced, and the potential during plating is not sufficient. Uniformity can be prevented, and the problem that the plating of the conductor varies can be solved.

(Fifth Embodiment) A fifth embodiment of the present invention will be described with reference to the drawings. The fifth example corresponds to the fifth embodiment. 11 (a) to 11 (d),
A pattern manufacturing method according to a fifth embodiment will be described with reference to FIGS. A glass fiber reinforced organic substrate was used as the substrate 71, and V-259PA of Nippon Steel Chemical Co., Ltd., whose main material was an epoxy acrylate resin having a negative fluorene skeleton, was used as the insulating resin 72.
This negative type epoxy acrylate resin is applied to a thickness of 10 μm by a spin coater, dried at 75 ° C. for 40 minutes, exposed to 200 mJ / cm 2, and subjected to dip development for 4 minutes with a 1% aqueous sodium carbonate solution to form a wiring. After the pattern was obtained, the epoxy acrylate resin remaining in the pattern was removed by an oxygen plasma asher at 45 ° C. for 2 minutes.
The epoxy acrylate resin was cured by heating for minutes (FIGS. 11A and 11B). Next, the first metal thin film 73, the second metal thin film 74, the third metal thin film 75, and the fourth
As the metal thin film 76, titanium was deposited as the first metal thin film 73 and the third metal thin film 75 by sputtering, and copper was deposited as the second metal thin film 74 and the fourth metal thin film 76 in this order (FIG. 11C). . As an example of sputtering conditions, after first evacuation to 1 × 10 −7 Torr and then setting it to 4 × 10 −3 Torr with argon, both the first metal thin film 73 and the third metal thin film 75 have the same titanium deposition conditions. 5A applied current, 300m tray speed
The second metal thin film 74 and the fourth metal thin film 76 were both subjected to copper deposition conditions of an applied current value of 4 A and a tray speed of 300 mm / min. The thickness of each thin film of titanium and copper is 200 nm, 220 n
m.

The resist 77 is coated with P-LA900PM manufactured by Tokyo Ohka Kogyo Co., Ltd. as a positive type photoresist with a thickness of 10 μm using a spin coater.
After drying at 30 ° C. for 30 minutes, 24 hours without using a photomask.
Exposure of 0 mJ / cm 2 and dip development for 6 minutes with an alkali developing solution make it possible to resist only the pattern portion.
Was obtained (FIG. 11D, FIG. 12A). After the copper sputtered film of the fourth metal thin film 76 is removed by etching, the resist 77 inside the pattern is removed by washing with an organic solvent (FIGS. 12B and 12C). After this,
The resist remaining inside the pattern was completely removed by an oxygen plasma asher at 45 ° C. for 4 minutes. This step also aims to oxidize the titanium of the third metal thin film 75 exposed on the surface. By oxidizing titanium in this step, the effect of increasing the resistance and increasing the insolubility in acid can be expected. The titanium covered by the copper in the pattern is not oxidized,
The resistance of the copper thin film of the metal thin film 74 did not increase.
The substrate in this state is plated with electrolytic copper in a sulfuric acid bath for 0.6.
A, performed for 24 minutes, the conductor portion was filled with copper plating (FIG. 12 (d). Thereafter, the first metal thin film 73, the second metal thin film 74, A smooth surface pattern was formed by shaving the three-metal thin film 75 and the plating metal 77. (FIG. 12 (e).) During plating, copper plating also precipitates on the oxidized titanium surface, Experiments have confirmed that it can be completely removed by the buff polishing process, and that the formation of a large-area substrate is facilitated by making the potential uniform during plating. By repeating in the same manner as in the fourth embodiment, a multilayer wiring having a smooth surface can be formed.

As in the first and fourth embodiments, when a photolithography process is generally used for embedding the plating, a step of leaving a resist in the pattern is performed in accordance with a pattern necessary for the resin pattern. It is necessary to remove the resist only at the part and bury it by plating. However, according to the above-described fifth embodiment, as in the first and fourth embodiments, a state is obtained in which the resist 77 remains only inside the via without using a photomask. As described above, depending on the pattern size, a mask is not required depending on the conditions, and it is possible to bury the resist only in the necessary pattern portion by plating. Therefore, the resist can be left in a necessary portion without considering a deviation from the mask pattern due to warpage of the substrate or the like, and plating on an unnecessary portion can be prevented.

(Sixth Embodiment) The sixth embodiment is the same as the second and third embodiments except for the steps up to the middle, but the composition of the metal thin film formed on the insulating resin is the same as that of the second embodiment. The steps after forming the metal thin film are different. FIGS. 13 (a) to 13 (d) and FIGS. 14 (a) to 14 (d) are cross-sectional views showing a pattern structure for explaining the sixth embodiment of the present invention. Hereinafter, a description will be given based on a sixth embodiment of the present invention. A substrate 81 such as an organic substrate, ceramic, alumina, or silicon is prepared, and an insulating resin 82 is provided thereon.
For example, a liquid film is laminated by a spin coating method, a die coating method, a curtain coating method, a printing method and the like, and a dry film is laminated by a laminating method (FIG. 13A). Next, after performing a treatment such as drying to cure the insulating resin, a pattern of a conductor portion is formed by a photolithography process or the like for a photosensitive resin or a laser processing method for a non-photosensitive resin (FIG. 13 ( b)) (corresponding to the first step in the claims). In the case of the photolithography process, the wiring pitch and via diameter that can be formed are determined by the resolution of the insulating resin 82 used here, and in the case of the laser processing method, the type of laser or the like. A metal thin film 83 is formed on the patterned insulating resin by using a sputtering method, an evaporation method, a CVD method, or the like. As an example of this metal, an IV of chromium, titanium, molybdenum, tantalum, niobium, etc.
Group a, Group Va, Group VIa transition metals are suitable. Further, a catalyst metal 84 is similarly sputtered on the thin film,
It is formed using an evaporation method, a CVD method, or the like (FIG. 13
(C)) (corresponding to the second step in the claims). Examples of the metal include a metal that causes a catalytic reaction with a metal to be electrolessly plated, such as palladium and zinc. Next, a resist 85 is laminated thereon by a spin coating method, a die coating method, a curtain coating method, a printing method or the like as in the case of the insulating resin, or by a lamination or the like in the case of a dry film (FIG. 13D). ). The resist 85 is subjected to an etching step or, if it is a positive photosensitive resin, an exposure and development step of a photolithographic process,
It is left only in the conductor pattern (FIG. 14A). When a photolithography process is used, there is no need for a photomask such as a chromium mask as a step at the time of exposure, especially when the opening area of the conductor pattern is small, but the resist 85 is left where the opening area is large. Therefore, a photomask is required. FIG. 13 (d), FIG.
Step (a) corresponds to the third step in the claims. Next, both the surface catalyst metal 84 and the metal thin film 83 are polished using a polishing method such as buff polishing or the like to make them smooth (FIG. 14B) (corresponding to the fourth step in the claims). Here, since the pattern portion is covered with the resist, contamination of the catalyst metal 84 due to shavings or scale generated during polishing or the like can be prevented, and the catalyst metal 84 can be used in a clean state for electroless plating. When the catalyst metal 84 and the metal thin film 83 are both metals that can be removed by etching, the metal thin film in the surface portion may be removed by etching. Next, the resist 85 remaining in the pattern portion is removed with an organic solvent or the like (FIG. 14).
(C)). The substrate thus obtained is placed in an electroless plating solution, and the conductor is buried with a plating metal 86 (FIG. 14D). The steps in FIGS. 14C and 14D correspond to the fifth step in the claims. As a result, a wiring capable of coping with miniaturization using electroless plating can be formed.
Further, by repeating this step, a multilayer wiring board can be manufactured. According to the above-described sixth embodiment, the catalytic metal thin film and the metal thin film for electroless plating remain at the pattern portion, and therefore do not cause disconnection due to non-precipitation or decrease in adhesion to the base. Since the catalyst removing metal thin film and the metal thin film are removed from portions other than the pattern portion, migration of metal ions does not occur and insulation reliability is secured. Therefore, fine wiring can be formed by the full additive method.

(Sixth Embodiment) A sixth embodiment of the present invention will be described with reference to the drawings. The sixth example corresponds to the sixth embodiment. 13 (a) to 13 (d),
With reference to FIGS. 14A to 14D, a method of manufacturing the pattern structure of the sixth embodiment will be described. A glass fiber reinforced organic substrate was used as the substrate 81, and V-259PA manufactured by Nippon Steel Chemical Co., Ltd., whose main material was an epoxy acrylate resin having a negative fluorene skeleton, was used as the insulating resin. This negative-type epoxy acrylate resin is applied to a thickness of 10 μm by a spin coater, dried at 75 ° C. for 40 minutes, exposed to 200 mJ / cm 2, and subjected to dip development with a 1% aqueous sodium carbonate solution for 4 minutes to perform wiring. After the pattern is obtained, the epoxy acrylate resin remaining in the pattern is removed by an oxygen plasma asher at 45 ° C for 2 minutes, and finally at 200 ° C in a nitrogen atmosphere.
The epoxy acrylate resin was cured by heating for 30 minutes (FIGS. 13A and 13B). Next, chromium as the metal thin film 83 and the catalyst metal 8 were formed by sputtering.
As No. 4, palladium was sequentially deposited. As an example of sputtering conditions, palladium is deposited at an applied current value of 5 A and a tray speed of 300 mm / min in a vacuum of 4 × 10 −3 Torr with argon after evacuation to 1 × 10 −7 Torr. The conditions were set at an applied current value of 4 A and a tray speed of 300 mm / min, and deposition was performed at a thickness of 150 nm and 220 nm, respectively (FIG. 13C). P-LA90 of Tokyo Ohka Kogyo Co., Ltd. as a positive photoresist on the resist 85
Using 0PM, apply by a spin coater to a thickness of 10 μm, and after drying at 90 ° C. for 30 minutes, 240 mJ / cm
Exposure No. 2 and dip development for 6 minutes with an alkali developing solution resulted in a state where the resist 85 remained only in the pattern portion (FIGS. 13D and 14A). Next, palladium of the catalyst metal 84 and chromium of the metal thin film 83 were removed by buffing, and electroless copper plating was performed in a bath having a pH of 12.5 to form a copper wiring (FIG. 14B).
(C), (d)).

[0043]

According to the pattern structure of the present invention, the via is formed in a buried state in which the upper surface is flat and coincides with the upper surface of the second metal thin film exposed on the insulating layer. In addition to the integration with the pattern, highly reliable interlayer connection is possible, and the upper surface of the via is buried so as to coincide with the upper surface of the exposed second metal thin film on the insulating layer, thereby increasing the number of layers. When thinning the insulating layer,
A smooth state without wiring steps can be realized, and as a result, another via can be formed immediately above the via, which has the effect of increasing the degree of freedom when designing a multilayer wiring. According to the method of manufacturing a pattern structure of the present invention, a metal is deposited by electrolytic plating in a recess surrounded by the first to fourth metal thin films corresponding to the vias of the substrate, and an upper portion of the metal is deposited on the deposited metal. The metal corresponding to the conductor pattern is deposited by electrolytic plating, so that the vias including the first to fourth metal thin films and the internal conductor (deposited metal) are embedded in the metal forming the upper conductor pattern. It is formed. For this reason, the embedded via and the upper conductor pattern can be integrated, and highly reliable interlayer connection can be achieved. Further, since the via is formed in a buried state in which the upper surface is flat, another via can be formed immediately above the via, and the degree of freedom in designing a multilayer wiring is increased. According to the pattern structure manufacturing method of the present invention, a metal is deposited by electrolytic plating in a recess surrounded by the first to fourth metal thin films corresponding to the vias of the substrate,
By depositing a metal corresponding to the upper conductor pattern on the deposited metal by electrolytic plating, a via including the first to fourth metal thin films and the internal conductor (deposited metal) is formed on the upper conductor pattern. Is formed in a buried state with respect to the metal that forms For this reason, the embedded via and the upper conductor pattern can be integrated, and highly reliable interlayer connection can be achieved. Further, since the via is formed in a buried state in which the upper surface is flat, another via can be formed immediately above the via, and the degree of freedom in designing a multilayer wiring is increased. According to the method of manufacturing a pattern structure of the present invention, after forming two layers of a first metal thin film and a second metal thin film on a substrate, a resist pattern is formed and etched to form a wiring of a required pattern. By leaving the second metal thin film as the application metal and leaving the other surface as the first metal thin film as the adhesion application metal, the metal forming the internal conductor at a location other than the second metal thin film as the wiring application metal Precipitation, that is, deposition of plating metal by electrolytic plating can be suppressed, and plating metal can be selectively deposited in accordance with a pattern. According to the method of manufacturing a pattern structure of the present invention, the first, second, third, and fourth metal thin films are formed on the substrate.
After the layers are formed by lamination, a resist pattern is formed and etched to leave a fourth metal thin film as a wiring use metal of a required pattern, and the other surface is formed with a third metal thin film as a contact use metal. By doing so, it is possible to suppress the deposition of the metal constituting the internal conductor at locations other than the fourth metal thin film as the metal for wiring, that is, the deposition of the plating metal by electrolytic plating, and to selectively deposit the plating metal in accordance with the pattern. Can be precipitated. According to the method of manufacturing a pattern structure of the present invention, in order to form a wiring in a predetermined shape, a wiring, a via, a portion to be a pad, etc., is formed on a substrate on which a pattern portion having a concave shape is formed by an insulating resin. After laminating the first metal thin film and the second metal thin film, a resist pattern is formed and etched to leave a second metal thin film as a metal used for wiring of a necessary pattern, and to be formed in a concave portion corresponding to the pattern portion. By thickening the conductor by electrolytic plating, a plating metal is deposited where a concave pattern is formed by the insulating resin, and a wiring or the like can be formed while maintaining the pattern shape. After removing and depositing the first metal thin film on the surface by polishing or etching, a smooth fine wiring can be formed by polishing the surface, and the pattern and the surface of the wiring board can be smoothed. A multilayer wiring can be manufactured while maintaining the same. According to the method of manufacturing a pattern structure of the present invention, in order to form a wiring in a predetermined shape, a wiring, a via, a portion to be a pad, etc., is formed on a substrate on which a pattern portion having a concave shape is formed by an insulating resin. After laminating the first, second, third, and fourth metal thin films, a resist pattern is formed and etched to leave a fourth metal thin film as a metal for wiring of a required pattern, corresponding to a pattern portion. By thickening the conductor by electroplating in the recessed portion to be formed, a plating metal is deposited where the pattern is formed in a concave shape by the insulating resin, and a wiring or the like can be formed while maintaining the pattern shape. Then, after removing and depositing the first, second, and third metal thin films and the surface portions of the plated conductors exposed on the surface by polishing or etching,
By polishing the surface, smooth fine wiring can be formed, and a multilayer wiring can be manufactured while maintaining the pattern and the surface of the wiring board smooth. According to the method of manufacturing a pattern structure of the present invention, a metal thin film and a catalytic metal thin film for electroless plating are laminated on a substrate on which a concave pattern portion such as a via is formed by an insulating resin, and after applying a resist, The resist other than the pattern part is removed, the metal thin film and the catalyst metal thin film that are exposed on the surface other than the pattern part where the resist remains are removed, and the resist of the pattern part is further removed. Since the metal is thickened in the place, the catalytic metal thin film and the metal thin film for electroless plating remain in the concave part of the pattern part, so that there is no disconnection due to non-precipitation or decrease in adhesion to the base, and other than the pattern part Since the catalytic metal thin film and the metal thin film have been removed from the point (2), migration of metal ions does not occur, and the reliability of insulation is secured. In other words, a clean surface of the contact metal can be maintained, a multilayer wiring board having good migration resistance can be manufactured, and fine wiring can be formed.

[Brief description of the drawings]

FIG. 1 is a cross-sectional configuration diagram illustrating a pattern structure manufactured by a method for manufacturing a pattern structure according to a first embodiment of the present invention.

FIG. 2 is a sectional configuration diagram of a pattern structure for explaining the first embodiment of the present invention.

FIG. 3 is a cross-sectional configuration diagram of a pattern structure for explaining a first embodiment of the present invention.

FIG. 4 is a sectional configuration diagram of a pattern structure for explaining a second embodiment of the present invention.

FIG. 5 is a cross-sectional configuration diagram of a pattern structure for explaining a second embodiment of the present invention.

FIG. 6 is a cross-sectional configuration diagram of a pattern structure for explaining a third embodiment of the present invention.

FIG. 7 is a cross-sectional configuration diagram of a pattern structure for explaining a third embodiment of the present invention.

FIG. 8 is a sectional configuration diagram of a pattern structure for explaining a fourth embodiment of the present invention.

FIG. 9 is a cross-sectional configuration diagram of a pattern structure for explaining a fourth embodiment of the present invention.

FIG. 10 is a cross-sectional configuration diagram of a pattern structure for explaining a fourth embodiment of the present invention.

FIG. 11 is a cross-sectional configuration diagram of a pattern structure for explaining a fifth embodiment of the present invention.

FIG. 12 is a cross-sectional configuration diagram of a pattern structure for explaining a fifth embodiment of the present invention.

FIG. 13 is a cross-sectional configuration diagram of a pattern structure for explaining a sixth embodiment of the present invention.

FIG. 14 is a cross-sectional configuration diagram of a pattern structure for explaining a sixth embodiment of the present invention.

[Explanation of symbols]

11 ... substrate, 12 ... insulating resin, 13 ... first metal thin film, 14 ... second metal thin film, 15 ... third metal thin film, 1
6: Fourth metal thin film, 17: plated metal, 18: plated metal, 19: lower pattern, 20: substrate, 21
... insulating resin, 22 ... first metal thin film, 23 ... second metal thin film, 24 ... third metal thin film, 25 ... fourth metal thin film, 26 ... resist, 27 ... plating metal, 28 ... …
Resist, 29 plating metal, 31 first metal thin film, 32 second metal thin film, 33 resist, 34
... plating metal, 41 ... substrate, 42 ... first metal thin film,
43 ... second metal thin film, 44 ... resist, 45 ... plating metal, 51 ... substrate, 52 ... insulating resin, 53 ...
1st metal thin film, 54 ... 2nd metal thin film, 55 ... resist, 56 ... plating metal, 61 ... substrate, 62 ... insulating resin, 63 ... 1st metal film, 64 ... 2nd metal thin film , 6
5 plating metal, 66 insulating resin, 67 insulating resin, 71 substrate, 72 insulating resin, 73 first metal thin film, 74 second metal thin film, 75 third Metal thin film, 76 Fourth metal thin film, 77 Resist, 78
... plating metal, 81 ... substrate, 82 ... insulating resin, 83
…… metal thin film, 84 …… catalyst metal, 85 …… resist,
86 ... Plating metal.

────────────────────────────────────────────────── ─── Continuation of the front page (56) References JP-A-6-132661 (JP, A) JP-A-6-140733 (JP, A) (58) Fields investigated (Int. Cl. ⁷ , DB name) H05K 3/46

Claims (9)

(57) [Claims] 1. A pattern structure configured to electrically connect conductive patterns such as wirings laminated via an insulating layer by a via, wherein the via is formed at least in the insulating layer by the conductive layer. First and second metal thin films laminated on the inner surface of the via recess formed in accordance with the pattern and the periphery of the opening of the via recess, and a via surrounded by the first and second metal thin films Third and fourth metal thin films laminated on the inner surface of a portion corresponding to the concave portion for use, and an opening peripheral region embedded in the concave portion surrounded by the third and fourth metal thin films, the opening for the via concave portion A pattern formed on the surface of the second metal thin film and a surface of the internal conductor, the conductor pattern being formed on the surface of the second metal thin film. . 2. The method according to claim 1, wherein the first metal thin film is made of a group IVa, a group Va,
The second metal thin film is made of any one or two or more of Group VIa transition metals, and the third metal thin film is made of any one or two or more of Group VIIIa or Ib transition metals and aluminum Are IVa, Va,
The fourth metal thin film is made of one or more of transition metals of Group VIa, and the fourth metal thin film is made of one or more of transition metals of Group VIIIa and Group Ib and aluminum. Item 1. The pattern structure according to Item 1. 3. A method for manufacturing a pattern structure configured to electrically connect conductive patterns such as wirings laminated via an insulating layer by a via, comprising: a substrate having a recess for a via; A first metal thin film made of one or more of transition metals of group IVa, group Va, group VIa on the substrate having the recess formed thereon;
A second metal thin film made of one or more of transition metals of Group VIIIa, Ib and aluminum; and a second metal thin film made of one or more of transition metals of Group IVa, Va, or VIa. 3 metal thin film and VII
A first step of laminating a fourth metal thin film made of one or two or more of transition metals of group Ia and group Ib and aluminum, in that order, and applying a resist on the fourth metal thin film A second step of removing the resist at locations other than the locations corresponding to the via recesses; a third step of removing the fourth metal thin film at locations other than the locations corresponding to the via recesses by etching; A fourth step of removing a resist remaining at a portion corresponding to the use concave portion, depositing a plating metal by electrolytic plating in a concave portion surrounded by a fourth metal thin film generated by removing the resist, and flattening the concave portion; A fifth step of etching the third metal thin film exposed on the surface to expose the second metal thin film on the surface, and a step corresponding to the via recess on the second metal thin film exposed on the surface. A sixth step of applying a resist for forming a body pattern, a seventh step of forming a conductor pattern by depositing a plating metal by electrolytic plating in a conductor pattern formation region formed in the sixth step, and the conductor And after removing the resist for pattern formation, an eighth step of removing the first and second metal thin films at locations other than the conductor pattern corresponding to the resist removal region by etching. The method of manufacturing the structure. 4. A method of manufacturing a pattern structure configured to electrically connect conductive patterns such as wirings laminated via an insulating layer by a via, the method comprising the steps of: A first metal thin film made of one or more of transition metals of group IVa, group Va, group VIa on the substrate having the recess formed thereon;
A second metal thin film made of one or more of transition metals of Group VIIIa, Ib and aluminum; and a second metal thin film made of one or more of transition metals of Group IVa, Va, or VIa. 3 metal thin film and VII
A first step of laminating a fourth metal thin film made of one or two or more of transition metals of group Ia and group Ib and aluminum, in that order, and applying a resist on the fourth metal thin film A second step of removing the resist at a location other than the location corresponding to the via recess; a third step of removing the fourth metal thin film at a location other than the location corresponding to the via recess by etching; A fourth step of removing a resist remaining at a portion corresponding to the use recess, flattening the recess by depositing a plating metal by electrolytic plating in a recess surrounded by a fourth metal thin film generated by the removal of the resist, A fifth step of etching the third metal thin film exposed on the surface to expose the second metal thin film on the surface, and an area corresponding to the via recess on the second metal thin film exposed on the surface A sixth step of forming a resist pattern for forming a conductor pattern, a seventh step of etching away the second metal thin film in a region not covered by the resist, and a step of forming a region corresponding to the via recess. After removing the resist, an eighth step of forming a conductor pattern by depositing a plating metal on the area by electrolytic plating, and etching the first metal thin film on the surface other than the area where the conductor pattern is formed 9. A method for manufacturing a pattern structure, comprising: 5. A first metal thin film made of one or more of transition metals of groups IVa, Va, and VIa on a substrate, and a first metal thin film of transition metals of group VIIIa, Ib, and aluminum. A first step of laminating one or two or more second metal thin films in this order, a second step of forming a pattern such as a wiring on the surface of the second metal thin film with a resist, and forming the pattern A third step of removing the second metal thin film excluding a region by etching, and after removing the resist, the first metal,
Electroplating using a metal thin film as a power supply layer
A fourth step of depositing a plating metal only on the second metal thin film corresponding to the resist-removed region; and removing the first metal thin film exposed on a surface other than a portion corresponding to the pattern by etching. And a fifth step of forming a conductor pattern by performing the method. 6. A first metal thin film made of one or more of transition metals of group IVa, Va, and VIa on a substrate, and a first metal thin film of transition metal of group VIIIa, Ib, and aluminum. A second metal thin film composed of one or two or more, a third metal thin film composed of one or more of transition metals of group IVa, Va, or VIa; and a transition metal of group VIIIa, Ib A first step of laminating a fourth metal thin film made of any one or two or more of aluminum and aluminum in this order; and a second step of forming a pattern such as a wiring on the surface of the fourth metal thin film using a resist. A third step of removing the fourth metal thin film by etching except for the region where the pattern is to be formed; and after removing the resist, the fourth metal thin film corresponding to the resist removed area. A fourth step of depositing a plating metal only on the film by electrolytic plating, and removing the third, second, and first metal thin films on the surface other than the portion corresponding to the pattern by etching to remove the conductive pattern. A method of manufacturing a pattern structure, comprising: a fifth step of forming: 7. A first step of forming, with an insulating resin, a pattern portion on a substrate where a portion to be a wiring, a via, a pad, or the like is concave, in order to form a wiring in a predetermined shape; IVa is formed on the surface of the formed substrate.
A first metal thin film made of one or more of transition metals of Group III, Group Va, Group VIa;
a second step of laminating a second metal thin film made of one or more of a group b transition metal and aluminum in this order; and applying a resist on the surface of the second metal thin film; A third step of removing the resist other than the portion corresponding to the portion; and a fourth step of removing the second metal thin film exposed on the surface other than the portion corresponding to the pattern portion covered with the resist by etching. A fifth step of removing the resist covering the portion corresponding to the pattern portion, and then forming a thick conductor by electrolytic plating on the concave portion corresponding to the pattern portion; and the first metal thin film exposed on the surface. A sixth step of removing and flattening the surface of the plated conductor by polishing or etching, and a flattening process. 8. A first step of forming, with an insulating resin, a pattern portion in which portions to become wires, vias, pads, and the like are concave on a substrate in order to form a wire in a predetermined shape; IVa is formed on the surface of the formed substrate.
A first metal thin film made of one or more of transition metals of Group III, Group Va, Group VIa;
a second metal thin film made of one or more of a group b transition metal and aluminum; and a group IVa, Va
A third metal thin film made of one or more of transition metals of Group VIa or Group VIa, and a fourth metal thin film made of one or more of transition metals of Group VIIIa or Ib and aluminum. A second step of forming a layer in this order, a third step of applying a resist on the surface of the fourth metal thin film, and then removing the resist at a location other than the location corresponding to the pattern section; A fourth step of removing the fourth metal thin film exposed on the surface other than the portion to be etched by etching; and removing a resist covering a portion corresponding to the pattern portion, and then electrolytic plating the concave portion corresponding to the pattern portion. A fifth step of thickening and forming a conductor by polishing, and removing the surface portions of the third, second and first metal thin films and the plated conductor exposed on the surface by polishing or etching. And a sixth step of flattening the pattern structure. 9. A first step of forming a pattern portion having a concave portion on a substrate to become a wiring, a via, a pad, or the like using an insulating resin; and IVa on the surface of the substrate on which the pattern portion is formed.
A second step of laminating, in this order, a metal thin film made of one or more of transition metals of group III, group Va, group VIa, and a catalyst metal thin film for electroless plating; A third step of removing the resist at a location other than the location corresponding to the pattern portion after applying a resist to the surface of the substrate; and A fourth step of removing the metal thin film and the catalyst metal thin film by etching, polishing, or the like; and, after removing a resist at a portion corresponding to the pattern portion, increasing the thickness of the plating metal by electroless plating on the concave portion of the catalyst metal thin film. And a fifth step of flattening the concave portions by attaching.