JP3283612B2 - Photoresist stripper - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a stripping solution for removing a photoresist.

[0002]

2. Description of the Related Art Photoresists are used as masks for structuring processes such as etching or implantation in the manufacture of integrated components or circuit boards and in similar technical fields. After serving that purpose, the photoresist is generally removed, often using a chemical known as a stripper, depending on the mode of action. However, the conventional photoresist stripping solution contains phenol and chlorinated hydrocarbons, so it is harmful in terms of the environment, it is difficult to treat waste liquid, and it is insoluble in water. It has disadvantages such as a complicated process.

[0003] Recently, as a photoresist stripper which does not have such a defect, for example, a mixture of benzenesulfonic acid and dodecylbenzenesulfonic acid (JP-A-54-153)
577), a mixture of morpholine and N, N'-dimethylformamide (JP-A-58-80638), dimethylacetamide, a mixture of dimethylformamide and tetrahydrothiophene-1,1-dioxide (JP-A-57-80637). -49538), or N-methyl-2-pyrrolidone and N- (2-hydroxyethyl)
Mixture with 2-pyrrolidone (JP-A-60-26340)
Publication).

[0004]

However, these strippers require time to completely dissolve and strip the photoresist, and it is impossible to strip the photoresist heat-treated at a high temperature. Has problems.

Accordingly, the present invention has been made in view of the above-mentioned problems of the prior art, and is intended to easily dissolve a photoresist heat-treated at a higher temperature at a relatively low temperature,
It is an object of the present invention to provide a stripping solution that can be completely stripped and can be washed with water in a process after stripping.

[0006]

According to the present invention, there is provided a photoresist stripping solution containing at least one of iminobisalkylamines represented by the following general formula 1 in an amount of 10 to 100% by weight. Is done.

Embedded image (In the formula , n and m each represent an integer of 1 to 3.)

That is, the photoresist stripping solution of the present invention comprises:
Since the iminobisalkylamines represented by the general formula 1 are used as a main component, the photoresist can be completely removed, and since it is water-soluble, the process after the process is only water washing. Is good.

Hereinafter, the photoresist stripping solution of the present invention will be described in detail. The photoresist stripping solution of the present invention contains an iminobisalkylamine represented by the above general formula 1 as a main component. As a specific example of the iminobisalkylamine , for example, methyliminobi
Although a salkylamine is mentioned, methyliminobispropylamine is particularly preferable. These iminobisalkylamines are used alone or in combination of two or more. The proportion of iminobisalkylamines in the stripping solution of the present invention is in the range of 10 to 100% by weight. If it is less than 10% by weight, it becomes difficult to easily remove the photoresist.

The photoresist stripping solution of the present invention contains the above-mentioned iminobisalkylamines as an essential component as a composition, but may also use a mixture of at least one of various solvents. Examples of various solvents in this case include sulfoxides, sulfones, pyrrolidones, amines, amino alcohols, ketones, amides, ethylene glycols, diethylene glycols, triethylene glycols, propylene glycols and the like. Derivatives thereof are mentioned, and among them, those having a relatively high boiling point and being water-soluble are preferable.

Specific examples of these solvents include, for example, sulfoxides such as dimethyl sulfoxide and diethyl sulfoxide: sulfones such as sulfolane, dimethyl sulfone and diethyl sulfone; and pyrrolidones such as N-methyl-2- Pyrrolidone and the like: As amines, 3-diethylaminopropylamine,
Methylaminopropylamine and the like: As amino alcohols, isopropanolamine, N, N-diethylethanolamine, N, N-dimethylethanolamine, aminoethylethanolamine, N-methyl-N,
N-diethanolamine, N-methylethanolamine, 3-amino-1-propanol, monoethanolamine, diethanolamine and the like: ketones such as acetylacetone and methyl isobutyl ketone; amides such as N, N-dimethylformamide; N, N-
Dimethylacetamide and the like: ethyne glycols and derivatives thereof include ethylene glycol, ethylene glycol dimethyl ether, ethylene glycol monobutyl ether, cellosolve acetate and the like: diethylene glycols and derivatives thereof include dietin glycol monoethyl ether and diethylene glycol mono-n -Butyl ether and the like: triethylene glycols and derivatives thereof include triethylene glycol and triethylene glycol monoethyl ether; and propylene glycols and derivatives thereof include dipropylene glycol monomethyl ether. Particularly preferred among these solvents are dimethyl sulfoxide, N-methyl-2-pyrrolidone and dipropylene glycol monomethyl ether. The proportion of these solvents can be mixed in the stripping solution of the present invention at 0 to 90% by weight, more preferably 30 to 70% by weight.

When the photoresist is stripped using the stripping solution of the present invention, the stripping solution exhibits a sufficient stripping ability even at room temperature.
It may be heated to about 100 ° C., and the substrate with the photoresist to be stripped may be immersed therein for about 0.25 to 5 minutes.

[0012]

EXAMPLES The present invention will be described in more detail with reference to the following Examples, but it should not be construed that the present invention is limited thereto.

Examples 1 to 8 and Comparative Examples 1 and 2 A positive photoresist OFPR- was formed on a silicon wafer.
5000 (manufactured by Tokyo Ohka Kogyo Co., Ltd.) was spin-coated at a dry film thickness of 1.5 μm, and then prebaked, exposed, and developed by usual methods. Then on a hot plate 12
Heating was performed at 0 ° C., 150 ° C., and 180 ° C. for 2 minutes to form a resist film.

Next, the obtained resist film was immersed in a stripper having the composition shown in Table 1 at a temperature of 50 ° C. and 75 ° C., respectively. After immersion for 5 minutes, the wafer was washed with water, and the presence or absence of the remaining resist on the dried wafer was observed with an optical microscope of 10 to 100 times to check the remaining degree of the resist film. The results are shown in Tables 2 and 3.

The evaluation criteria for the peeled state in Tables 2 and 3 are as follows. ：: Completely peeled off. ：: Resist slightly remained partially. Δ: Resist remained thin overall. X: The resist clearly remains.

[0016]

[Table 1] Note: MIBPA: methyliminobispropylamine DMSO: dimethylsulfoxide NMP: N-methyl-2-pyrrolidone MEA: monoethanolamine DEGEE: diethylene glycol monoethyl ether

[0017]

[Table 2]

[0018]

[Table 3]

[0019]

As described above, the photoresist stripping solution of the present invention comprises an iminobisalkylamine represented by the above general formula (1).
According to the present stripping solution, the photoresist can be completely removed, and since it is water-soluble, the process after the treatment can be performed only with water washing. Play.

──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-4-124668 (JP, A) JP-A-1-105949 (JP, A) JP-A-63-208043 (JP, A) JP-A-6-204 202345 (JP, A) JP-A-6-27684 (JP, A) (58) Fields investigated (Int. Cl. ⁷ , DB name) G03F 7/42 H01L 21/027 H01L 21/306

Claims (2)

(57) [Claims] 1. A photoresist stripper comprising 10 to 100% by weight of at least one iminobisalkylamine represented by the following general formula 1. Embedded image (In the formula , n and m each represent an integer of 1 to 3.) 2. The photoresist stripper according to claim 1, wherein the iminobisalkylamine is methyliminobispropylamine.