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JP3245933B2 - Resistor - Google Patents

Resistor

Info

Publication number
JP3245933B2
JP3245933B2 JP05664592A JP5664592A JP3245933B2 JP 3245933 B2 JP3245933 B2 JP 3245933B2 JP 05664592 A JP05664592 A JP 05664592A JP 5664592 A JP5664592 A JP 5664592A JP 3245933 B2 JP3245933 B2 JP 3245933B2
Authority
JP
Japan
Prior art keywords
resistance
resistor
sintered body
film
mol
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP05664592A
Other languages
Japanese (ja)
Other versions
JPH05217713A (en
Inventor
和敬 中村
啓祐 永田
康信 米田
広次 谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
Original Assignee
Murata Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Priority to JP05664592A priority Critical patent/JP3245933B2/en
Priority to US08/014,362 priority patent/US5355112A/en
Publication of JPH05217713A publication Critical patent/JPH05217713A/en
Application granted granted Critical
Publication of JP3245933B2 publication Critical patent/JP3245933B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Non-Adjustable Resistors (AREA)
  • Thermistors And Varistors (AREA)

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は、特性のばらつきを防止
でき、かつ湿度等に対する耐環境性を向上できるととも
に、電力容量を大きくできるようにした抵抗体に関す
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resistor capable of preventing variations in characteristics, improving environmental resistance to humidity and the like, and increasing power capacity.

【0002】[0002]

【従来の技術】従来から、サーメット抵抗体は精度の優
れた抵抗素子として広く知られている。このような抵抗
体は、例えばアルミナ基板の表面に、Ru酸化物,又は
Ru化合物からなる抵抗ペーストを印刷して厚膜の抵抗
膜を形成し、これを800 〜900℃で焼き付ける。そして
上記アルミナ基板の抵抗膜の表面にガラスペーストを塗
布した後、焼き付けてガラス膜を形成し、これにより湿
度等に対する耐環境性を向上するようにしている。
2. Description of the Related Art Conventionally, a cermet resistor has been widely known as a resistance element having excellent accuracy. For such a resistor, for example, a resistor paste made of Ru oxide or a Ru compound is printed on the surface of an alumina substrate to form a thick resistive film, which is baked at 800 to 900 ° C. Then, a glass paste is applied to the surface of the resistive film of the alumina substrate and then baked to form a glass film, thereby improving environmental resistance to humidity and the like.

【0003】[0003]

【発明が解決しようとする課題】しかしながら、上記従
来の抵抗体では、抵抗膜にガラス膜をコーティングする
ことから抵抗値が変化し易く、特性にばらつきが生じ易
いという問題がある。また上記ガラス膜にピンホールが
生じる場合があり、この結果湿度の高い雰囲気中では水
分等が侵入して抵抗特性を悪化させるという問題もあ
る。さらに上記従来の抵抗体では、アルミナ基板,抵抗
膜,及びガラス膜の熱膨張率がそれぞれ異なることか
ら、抵抗膜の基板への密着性が低く、その結果大きな電
力容量が得られず、100mW 程度が限度であった。
However, in the above-mentioned conventional resistor, there is a problem that the resistance value is easily changed since the glass film is coated on the resistance film, and the characteristics are easily varied. In addition, a pinhole may be formed in the glass film, and as a result, there is a problem that moisture or the like invades in an atmosphere with high humidity to deteriorate the resistance characteristic. Further, in the above-mentioned conventional resistor, since the thermal expansion coefficients of the alumina substrate, the resistive film, and the glass film are different from each other, the adhesion of the resistive film to the substrate is low, and as a result, a large power capacity cannot be obtained, and about 100 mW. Was the limit.

【0004】本発明は、上記従来の状況に鑑みてなされ
たもので、抵抗値の変化を防止して特性のばらつきを回
避でき、かつ湿度に対する耐環境性を向上できるととも
に、大きな電力容量が得られる抵抗体を提供することを
目的としている。
SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned conventional circumstances, and it is possible to prevent variations in characteristics by preventing a change in resistance value, to improve environmental resistance to humidity, and to obtain a large power capacity. It is intended to provide a resistor that can be used.

【0005】[0005]

【課題を解決するための手段】そこで請求項1の発明
は、セラミクス焼結体の内部に少なくとも1つの抵抗膜
を埋設してなり、かつ上記焼結体がZnOを主成分と
し、これに副成分としてBi,Pb,B,Siのうち1
つ以上の元素を含んでいることを特徴としている。ま
た、請求項2の発明は、上記Bi,Pb,B,Siのう
ち1つ以上の元素を合計で0.5 〜20mol %含有したこと
を特徴とし、請求項3は、上記セラミクス焼結体が、複
数のセラミクスシートをこれの間に上記抵抗膜を介在さ
せて積層し、該積層体を抵抗膜とともに一体焼結したも
のであることを特徴としている。
Accordingly, the present invention provides a ceramic sintered body in which at least one resistive film is buried inside, and the sintered body is composed mainly of ZnO, One of Bi, Pb, B and Si as a component
It is characterized by containing one or more elements. The invention according to claim 2 is characterized in that at least one element of Bi, Pb, B, and Si is contained in a total amount of 0.5 to 20 mol%. It is characterized in that a plurality of ceramic sheets are laminated with the above-mentioned resistive film interposed therebetween, and the laminated body is integrally sintered together with the resistive film.

【0006】ここで、副成分の添加量は0.5 〜20mol %
とするのが望ましい。これは、添加量を0.5 mol %未満
にすると焼結が進まず、抵抗素子として使用できなくな
る場合があり、また20mol %を越えるとセラミクス焼結
体と抵抗膜とが反応し易く、その結果抵抗値のばらつき
が大きくなったり,電力容量が低下する場合があるから
である。また、上記副成分には、通常のZnO系セラミ
クスに用いられるSb,Co,Mn,Ti,Fe,Ni
等が含まれていても良い。
[0006] Here, the added amount of the subcomponent is 0.5 to 20 mol%.
It is desirable that If the addition amount is less than 0.5 mol%, sintering may not proceed and may not be used as a resistance element. If the addition amount exceeds 20 mol%, the ceramic sintered body and the resistance film are liable to react with each other. This is because variations in the values may increase or the power capacity may decrease. The sub-components include Sb, Co, Mn, Ti, Fe, Ni used in ordinary ZnO-based ceramics.
Etc. may be included.

【0007】[0007]

【作用】本発明に係る抵抗体によれば、焼結体の内部に
抵抗膜を埋設し、該抵抗膜の周囲をセラミクスで覆った
ので、従来のガラスコーティングを不要にでき、それだ
け抵抗値の変化による特性のばらつきを回避できる。ま
たピンホールの問題も解消できることから、湿度等に対
する耐環境性を改善でき、この点からも抵抗特性の悪化
を回避できる。さらに、ZnOを主成分とし、これに焼
結を低温化するBi,Pb,B,Siを所定量添加した
ので、これにより抵抗膜と焼結体との密着性を向上で
き、しかも抵抗膜の周囲は同一の焼結体で囲まれること
から、放熱性を向上でき、かつ熱膨張率の差による歪も
少なくでき、それだけ大きな電力容量を得ることができ
る。
According to the resistor according to the present invention, the resistance film is buried inside the sintered body and the periphery of the resistance film is covered with ceramics, so that the conventional glass coating can be eliminated, and the resistance value can be reduced accordingly. Variations in characteristics due to changes can be avoided. In addition, since the problem of pinholes can be solved, environmental resistance to humidity and the like can be improved, and from this point, deterioration of resistance characteristics can be avoided. Furthermore, since a predetermined amount of Bi, Pb, B, and Si, which contains ZnO as a main component and lowers the sintering temperature, is added, the adhesion between the resistance film and the sintered body can be improved. Since the periphery is surrounded by the same sintered body, heat dissipation can be improved, distortion due to a difference in coefficient of thermal expansion can be reduced, and a large power capacity can be obtained.

【0008】[0008]

【実施例】以下、本発明の実施例を図について説明す
る。図1及び図2は本発明の一実施例による抵抗体を説
明するための図である。図において、1は本実施例のサ
ーメット抵抗体である。この抵抗体1は略直方体状のセ
ラミクス焼結体3の内部にRu酸化物,又はその化合物
からなる抵抗膜4を埋設した構造のものである。上記抵
抗膜4の左, 右端面4a,4bは上記焼結体3の左, 右
側面3a,3bに露出しており、他の端面は焼結体3内
に封入されている。また、上記焼結体3の左, 右側面3
a,3bにはAg−Pdからなる外部電極5が被覆形成
されており、該外部電極5は上記抵抗膜4の各端面4
a,4bに接続されている。
BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 and 2 are views for explaining a resistor according to an embodiment of the present invention. In the figure, reference numeral 1 denotes a cermet resistor according to the present embodiment. The resistor 1 has a structure in which a substantially rectangular parallelepiped ceramic sintered body 3 has a resistance film 4 made of Ru oxide or a compound thereof embedded therein. The left and right end faces 4a, 4b of the resistance film 4 are exposed on the left and right side faces 3a, 3b of the sintered body 3, and the other end faces are sealed in the sintered body 3. The left and right side surfaces 3 of the sintered body 3
An external electrode 5 made of Ag-Pd is formed on each of the end surfaces 4a and 3b.
a, 4b.

【0009】また、上記焼結体3は、ZnOを主成分と
し、これに副成分としてBi,Pb,B,Siのうち1
つ以上の元素を0.5 〜20mol %添加してなる複数のセラ
ミクスシート2を積層して積層体を形成し、該積層体を
一体焼結して形成されたものである。そしてこの場合
に、厚さ方向中央に位置する1枚のセラミクスシート2
の上面に上記抵抗膜4をパターン形成し、この抵抗膜4
が形成されたセラミクスシート2に残りのセラミクスシ
ート2をサンドイッチ状に重ね合わせている。
The sintered body 3 contains ZnO as a main component and one of Bi, Pb, B and Si as a subcomponent.
A laminate is formed by laminating a plurality of ceramic sheets 2 each containing at least one element in an amount of 0.5 to 20 mol%, and integrally sintering the laminate. In this case, one ceramic sheet 2 located at the center in the thickness direction is used.
The resistive film 4 is pattern-formed on the upper surface of the
The remaining ceramics sheet 2 is superimposed on the ceramics sheet 2 on which is formed in a sandwich shape.

【0010】次に本実施例の作用効果について説明す
る。本実施例の抵抗体1によれば、焼結体3内に抵抗膜
4を埋設したので、この抵抗膜4の周囲はセラミクスで
覆われていることから、従来のガラスコーティングを不
要にでき、それだけ抵抗値の変化による特性のばらつき
を回避できる。またピンホールの問題も解消できること
から、湿度等に対する耐環境性を改善でき、抵抗特性の
悪化を回避できる。
Next, the operation and effect of this embodiment will be described. According to the resistor 1 of the present embodiment, since the resistor film 4 is embedded in the sintered body 3, the periphery of the resistor film 4 is covered with ceramics, so that the conventional glass coating can be eliminated. As a result, variations in characteristics due to changes in resistance can be avoided. In addition, since the problem of pinholes can be solved, environmental resistance to humidity and the like can be improved, and deterioration of resistance characteristics can be avoided.

【0011】また、上記焼結体3に、ZnOを主成分と
し、これにBi,Pb,B,Siを0.5 〜20mol %添加
してなるセラミクス材料を採用したので、焼結温度を低
温化でき、これにより得られた抵抗膜4は焼結体3との
密着性が良く、しかも抵抗膜4の周囲は上記セラミクス
材料で囲まれていることから、放熱性を向上でき、かつ
熱膨張率の差による歪も少なくでき、それだけ電力容量
を向上できる。ちなみに、従来の抵抗素子では100mW 程
度であったのに対して、本実施例の抵抗体では、従来素
子の体積に比較して小型化を図りながら10倍以上の電力
容量が得られる。
Further, since the sintered body 3 is made of a ceramic material containing ZnO as a main component and Bi, Pb, B, Si added in an amount of 0.5 to 20 mol%, the sintering temperature can be reduced. The resistance film 4 thus obtained has good adhesion to the sintered body 3, and since the periphery of the resistance film 4 is surrounded by the above-mentioned ceramic material, the heat dissipation can be improved and the coefficient of thermal expansion can be improved. The distortion due to the difference can be reduced, and the power capacity can be improved accordingly. Incidentally, while the resistance of the conventional resistance element was about 100 mW, the resistance of the present embodiment can achieve a power capacity of 10 times or more while reducing the size of the conventional element.

【0012】さらに、本実施例では、従来のガラスペー
ストを塗布した後、焼き付ける工程を不要にできること
から、その分だけ製造コストを低減できる。さらにまた
抵抗膜の積層化が可能となることから、同一パターン,
同一工程で抵抗値の異なる各種の抵抗膜を自由に設定で
きる。
Further, in the present embodiment, the step of baking after applying the conventional glass paste can be omitted, so that the manufacturing cost can be reduced accordingly. Furthermore, since the resistance film can be laminated, the same pattern,
Various resistance films having different resistance values can be freely set in the same process.

【0013】次に本実施例の抵抗体1の一製造方法につ
いて説明する。まず、ZnOを主成分とし、これにB
i,Pb,B,SiをそれぞれBi2 3 ,Pb
2 3 ,B2 3 ,SiO2 酸化物として、これらの添
加量が0.5 〜20mol %となるよう配合してセラミクス粉
末を形成する。この粉末に純水を加えてボールミルで粉
砕混合してスラリーを形成する。
Next, one method of manufacturing the resistor 1 of the present embodiment will be described. First, ZnO is used as a main component, and B
i, Pb, B and Si are replaced by Bi 2 O 3 and Pb, respectively.
2 O 3 , B 2 O 3 , and SiO 2 oxides are added to form a ceramic powder by mixing them in an amount of 0.5 to 20 mol%. Pure water is added to the powder, and the mixture is pulverized and mixed by a ball mill to form a slurry.

【0014】次に、上記スラリーを蒸発乾燥させて、75
0 ℃で2時間仮焼成する。この仮焼成物を粗粉砕し、こ
れに純水を加えてボールミルで微粉砕してセラミクス原
料を形成する。次いで、この原料に、エチルアルコール
及びトルエンを6:4の割合で混合した溶媒を加えてボ
ールミルで混合してスラリーを形成する。
Next, the slurry is evaporated to dryness to give 75
Pre-fire at 0 ° C for 2 hours. The calcined product is roughly pulverized, and pure water is added thereto, and finely pulverized by a ball mill to form a ceramic material. Next, a solvent in which ethyl alcohol and toluene are mixed at a ratio of 6: 4 is added to the raw materials, and mixed with a ball mill to form a slurry.

【0015】上記スラリーをドクタブレード法により、
厚さ70μm のグリーンシートを形成し、このグリーシー
トを乾燥させた後、所定の大きさにカットして矩形状の
セラミクスシート2を多数枚形成する。
[0015] The above slurry is treated by a doctor blade method.
After forming a green sheet having a thickness of 70 μm and drying the green sheet, the green sheet is cut into a predetermined size to form a large number of rectangular ceramic sheets 2.

【0016】次に、RuO2 :Ru2 Pb2 7 :Ru
2 Bi2 7 =6:2:2mol 比で配合してなる組成物
に、ビヒクルおよびガラスを加えて抵抗ペーストを形成
する。この抵抗ペーストを上記1枚のセラミクスシート
2の上面に印刷して抵抗膜4を形成する。次いで、上記
抵抗膜4が形成されたセラミクスシート2の上面,及び
下面に複数枚のセラミクスシート2を重ね合わせて積層
し、これに2t/cm2 の圧力を加えて圧着し、これにより
積層体を形成する。
Next, RuO 2 : Ru 2 Pb 2 O 7 : Ru
Vehicle and glass are added to a composition prepared by mixing 2 Bi 2 O 7 = 6: 2: 2 mol to form a resistance paste. The resistance paste is printed on the upper surface of the one ceramic sheet 2 to form the resistance film 4. Next, a plurality of ceramic sheets 2 are superimposed and laminated on the upper and lower surfaces of the ceramic sheet 2 on which the resistive film 4 is formed, and a pressure of 2 t / cm 2 is applied thereto and pressure-bonded, thereby forming a laminate. To form

【0017】次に、上記積層体を所定の大きさにカット
し、これを400 ℃に加熱してバインダーを飛散させた
後、930 ℃に昇温加熱して3時間焼成して焼結体3を形
成する。これにより得られた焼結体3をバレル研磨した
後、これの左, 右側面3a,3bにAg:Pd=7:3
wt比からなる電極ペーストを塗布し、これを850 ℃で10
分間焼き付けて外部電極5を形成し、該外部電極5と抵
抗膜4の左, 右端面4a,4bとを電気的に接続する。
これにより本実施例の抵抗体1が製造される。
Next, the laminate is cut into a predetermined size, heated to 400 ° C. to disperse the binder, heated to 930 ° C. and heated for 3 hours, and fired for 3 hours. To form After the obtained sintered body 3 is barrel-polished, Ag: Pd = 7: 3 on the left and right side surfaces 3a and 3b thereof.
Apply electrode paste consisting of wt.
The external electrodes 5 are formed by baking for minutes, and the external electrodes 5 are electrically connected to the left and right end faces 4a, 4b of the resistive film 4.
Thereby, the resistor 1 of the present embodiment is manufactured.

【0018】[0018]

【表1】 [Table 1]

【0019】次に本実施例の抵抗体1の効果を確認する
ために行った試験について説明する。この試験は、表1
に示すように、副成分の添加量を0.1 〜40mol %の範囲
で変化させて上記製造方法により多数の試料No. 1〜N
o. 55を作成し、この各試料の抵抗値(Ω),3CV
(3σ/平均×100 %σは標準偏差) ,及び電力容量
(mW) を測定して行った(表中、*印は本発明の請求範
囲外を示す)。
Next, a test performed to confirm the effect of the resistor 1 of this embodiment will be described. This test is shown in Table 1.
As shown in the figure, a large number of sample Nos. 1 to N were prepared by changing the amount of the additive added in the range of 0.1 to 40 mol%.
o. 55 was prepared, and the resistance value (Ω) of each sample, 3 CV
(3σ / average × 100% σ is the standard deviation), and the power capacity (mW) was measured (in the table, an asterisk indicates the outside of the claims of the present invention).

【0020】[0020]

【表2】 [Table 2]

【0021】表2はその結果を示す。同表からも明らか
なように、副成分の添加量が0.5mol%未満の各試料No.
1,9,17,25,の場合は、セラミクスの焼結が進
んでおらず抵抗体として使用できない。また、上記添加
量が20mol %を越える各試料No. 7,8,15,16,
23,24,31,32,52〜55の場合は、抵抗値
にばらつきが生じ、しかも電力容量は96〜410mW と低
い。これに対して添加量を0.5 〜20mol %範囲内とした
各試料No. 2〜6,10〜14,18〜22,26〜3
0,33〜51の場合は、抵抗値のばらつきが小さく、
しかも電力容量は830 〜1830mWと大幅に向上しているこ
とがわかる。
Table 2 shows the results. As is clear from the table, each sample No. in which the addition amount of the sub-component was less than 0.5 mol%.
In the case of 1, 9, 17, 25, the sintering of ceramics has not progressed and cannot be used as a resistor. In addition, each sample No. 7, 8, 15, 16,
In the case of 23, 24, 31, 32, 52 to 55, the resistance value varies, and the power capacity is as low as 96 to 410 mW. On the other hand, in each of Sample Nos. 2 to 6, 10 to 14, 18 to 22, 26 to 3 in which the addition amount was in the range of 0.5 to 20 mol%.
In the case of 0, 33 to 51, the variation of the resistance value is small,
In addition, it can be seen that the power capacity is greatly improved to 830 to 1830 mW.

【0022】[0022]

【発明の効果】以上のように本発明に係る抵抗体によれ
ば、焼結体の内部に抵抗膜を埋設し、かつ焼結体にZn
Oを主成分とし、これにBi,Pb,B,Siを1〜20
mol %添加してなるセラミクス材料を採用したので、抵
抗値の変化による特性のばらつきを回避でき、かつ湿度
等に対する耐環境性を向上できる効果があるとともに、
電力容量を向上できる効果がある。
As described above, according to the resistor of the present invention, a resistance film is embedded in a sintered body, and Zn is added to the sintered body.
O as a main component, and Bi, Pb, B, and Si as 1 to 20
The use of a ceramic material with mol% added has the effect of avoiding variations in characteristics due to changes in resistance and improving environmental resistance to humidity, etc.
There is an effect that the power capacity can be improved.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の一実施例による抵抗体を説明するため
の断面図である。
FIG. 1 is a cross-sectional view illustrating a resistor according to an embodiment of the present invention.

【図2】上記実施例の抵抗体の製造方法を示す分解斜視
図である。
FIG. 2 is an exploded perspective view showing a method for manufacturing the resistor of the embodiment.

【符号の説明】[Explanation of symbols]

1 抵抗体 2 セラミクスシート 3 焼結体 4 抵抗膜 DESCRIPTION OF SYMBOLS 1 Resistor 2 Ceramics sheet 3 Sintered body 4 Resistance film

───────────────────────────────────────────────────── フロントページの続き (72)発明者 谷 広次 京都府長岡京市天神2丁目26番10号 株 式会社村田製作所内 (56)参考文献 特開 昭63−37601(JP,A) 特開 昭64−47001(JP,A) 特開 昭64−2402(JP,A) 特開 平2−184552(JP,A) 特開 平1−130502(JP,A) 特開 平1−152704(JP,A) (58)調査した分野(Int.Cl.7,DB名) H01C 7/02 - 7/22 ────────────────────────────────────────────────── ─── Continued from the front page (72) Inventor Hiroji Tani 2-26-10 Tenjin, Nagaokakyo-shi, Kyoto Murata Manufacturing Co., Ltd. (56) References JP-A-63-37601 (JP, A) JP-A 64-47001 (JP, A) JP-A 64-2402 (JP, A) JP-A-2-184552 (JP, A) JP-A 1-130502 (JP, A) JP-A 1-152704 (JP) , A) (58) Field surveyed (Int. Cl. 7 , DB name) H01C 7/ 02-7/22

Claims (3)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 セラミクス焼結体の内部に少なくとも1
つの抵抗膜を埋設してなり、かつ上記焼結体がZnOを
主成分とし、これに副成分としてBi,Pb,B,Si
のうち1つ以上の元素を含んでいることを特徴とする抵
抗体。
1. A ceramic sintered body having at least one
And the sintered body has ZnO as a main component, and Bi, Pb, B, and Si as subcomponents.
A resistor comprising one or more of the following elements.
【請求項2】 請求項1において、上記Bi,Pb,
B,Siのうち1つ以上の元素を合わせて0.5 〜20mol
%含有したことを特徴とする抵抗体。
2. The method according to claim 1, wherein said Bi, Pb,
0.5 to 20 mol in total of one or more elements of B and Si
%.
【請求項3】 請求項1又は2において、上記セラミク
ス焼結体が、複数のセラミクスシートをこれの間に上記
抵抗膜を介在させて積層し、該積層体を抵抗膜とともに
一体焼結したものであることを特徴とする抵抗体。
3. The ceramic sintered body according to claim 1, wherein the ceramics sintered body is formed by laminating a plurality of ceramics sheets with the resistive film interposed therebetween, and integrally sintering the laminated body together with the resistive film. A resistor, characterized in that:
JP05664592A 1992-02-07 1992-02-07 Resistor Expired - Fee Related JP3245933B2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP05664592A JP3245933B2 (en) 1992-02-07 1992-02-07 Resistor
US08/014,362 US5355112A (en) 1992-02-07 1993-02-05 Fixed resistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP05664592A JP3245933B2 (en) 1992-02-07 1992-02-07 Resistor

Publications (2)

Publication Number Publication Date
JPH05217713A JPH05217713A (en) 1993-08-27
JP3245933B2 true JP3245933B2 (en) 2002-01-15

Family

ID=13033087

Family Applications (1)

Application Number Title Priority Date Filing Date
JP05664592A Expired - Fee Related JP3245933B2 (en) 1992-02-07 1992-02-07 Resistor

Country Status (1)

Country Link
JP (1) JP3245933B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009005108A1 (en) 2007-06-29 2009-01-08 Koa Corporation Resistor

Also Published As

Publication number Publication date
JPH05217713A (en) 1993-08-27

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