JP3198504B2 - Manufacturing method of liquid crystal display device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain a liquid crystal display device having no irregular alignment due to contaminants by cleaning the surface of an alignment film first by a nozzle shower so as to remove adsorption activity of the alignment film in the cleaning process after the alignment film is applied on a substrate and rubbed, and then cleaning the region where the substrate is exposed. SOLUTION: The substrate 101 after rubbing treatment is sent to a rubbing cleaning process. Pure water from a nozzle shower 108 is poured onto the center of the alignment film 107 printed on the substrate 101. Then the pure water spreads from the center to the peripheral region to clean the exposed part 201 of the substrate and then drops from the substrate end face to outside of the substrate. Therefore, the adsorption activity of the alignment film surface after rubbed is first removed and then the contaminants adsorbed on the exposed part 201 of the substrate in the peripheral region are washed off, so that even when contaminants flow onto the alignment film, contaminants are not adsorbed by the film and that an irregular alignment due to contaminants is not caused.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a liquid crystal display device, and more particularly to a method of cleaning after rubbing for preventing alignment unevenness in a cleaning step after rubbing.

[0002]

2. Description of the Related Art In general, a liquid crystal display device comprises a cell formed by bonding a color filter substrate provided with RGB colors and a TFT substrate provided with transistors, and injecting liquid crystal into the cell. is made of. Then, an alignment film is applied on the color filter substrate or the TFT substrate (hereinafter, these are simply referred to as “substrate”).

A general alignment film is a polyimide and a polyamic acid which is a precursor of the polyimide, and a letterpress printing method and a spin coating method are usually employed as a method of applying the alignment film. The alignment film applied to the substrate is baked in an oven at 170 to 250 ° C. for about 1 to 3 hours. The purpose of this baking is to eliminate the solvent in the case of using polyimide and to densify the film, and to skip the solvent in the case of using polyamic acid, and to hydrolyze the polyamic acid. Into polyimide.

Further, the position where the alignment film is applied on the substrate is limited to only the central portion of the substrate due to the manufacturing method of the liquid crystal display device. Therefore, there is a portion where the substrate surface is exposed around the polyimide film. The reason why the alignment film is applied only to the center portion of the substrate is that the lead-out wiring connecting the TFT substrate and the module terminal is located around the alignment film, and the sealing material for bonding the two substrates is applied. This is because there is a site to perform. The material of the outermost surface of the exposed portion of the substrate is Cr, Al, Mo, ITO.
Examples thereof include wiring metal materials such as films, insulating film materials such as SiNx / SiOx and organic insulating films, and glass.

[0005] The substrate with the alignment film is then subjected to a rubbing treatment in order to align the alignment film molecules in one direction. The rubbing treatment is a step of rubbing the alignment film with a roll around which a rubbing cloth is wound. At this time, the exposed portion of the substrate located around the alignment film together with the alignment film surface is also rubbed at the same time. The rubbing cloth is generally made of cotton or rayon. And, in the rubbing treatment accompanied by this physical phenomenon, shavings of the alignment film become a problem. The degree of shaving varies depending on the orientation film hardness, the cloth material hardness, and the rubbing conditions (roll pressing amount, roll rotation speed, table or roll moving speed), but the shavings are still a problem.

[0006] Subsequent to the rubbing process, the substrate is cleaned. The purpose is to remove the fibers coming off the rubbing cloth and the shavings of the alignment film. This cleaning process generally employs a single-wafer method from the viewpoint of throughput.

A conventional cleaning method after a rubbing treatment (hereinafter referred to as a rubbing treatment)
As rubbing cleaning, a method described in JP-A-7-120739 is known. This will be described with reference to FIG. 7. Here, in the single-wafer cleaning apparatus, after the rubbing, with respect to the advancing direction of the substrate, pure water is applied obliquely forward from a direction of 35 ° to 60 ° with respect to the substrate. Inject a liquid such as. For this purpose, nozzles 701 to 704 are provided, and the liquid ejected from these nozzles is made to flow on the substrate (washing with running water). After this cleaning, a liquid pool is formed on the substrate transported to the next chamber, but instead of the liquid draining method using air, a liquid is sprayed to diffuse the liquid pool and reduce the amount taken out. ing.

The advantages of such processing are as follows. 1. Since water splashing on a portion other than the portion where wetting has begun or on the substrate during standby is reduced, unevenness in wetting is reduced, and countermeasures against alignment disorder and uneven cleaning can be performed. 2. Since the water remaining on the substrate can be sufficiently washed away, there is no redeposition of the contaminated components due to the residue of the liquid on the alignment film, and no stain or unevenness due to the redeposition is generated.

The rubbing cleaning method described in Japanese Patent Application Laid-Open No. 7-77677 will be described below with reference to FIG. That is, in this conventional example, a single-wafer cleaning machine for preventing cleaning unevenness is used. Specifically, after rubbing, a pre-processing chamber 801 is provided in front of a cleaning chamber for cleaning a substrate. Then, an air knife 802 for removing foreign substances adhering to the substrate surface, and a high pressure for flowing pure water down the substrate and covering the entire surface of the substrate with the flowing pure water in a layered manner in the pre-treatment chamber. And a spray tube 803.

Here, first, foreign matter on the substrate is removed with an air knife. As a result, foreign matter is removed from the surface of the substrate by the pressure of water sprayed from the high-pressure spray tube thereafter. For this reason, as in the conventional case, when washing with pure water, foreign matter is dragged by water pressure, the foreign matter becomes a nucleus, and a new “stain” is generated along the flow of pure water. Can be prevented.

That is, the purpose of installing the high-pressure spray tube is to prevent uneven cleaning. Usually, the cleaning unevenness occurs when the rubbed substrate is cleaned with a cleaning liquid such as water or pure water.
This often occurs on the substrate surface when it begins to get wet with pure water, etc., and this cleaning unevenness does not disappear and remains on the substrate surface. This is because the adhesion between the alignment film and the substrate is strengthened. In order to do so, the silane coupling agent previously applied to the lower surface of the alignment film is partially eluted when entering water, and the eluted coupling agent is instantaneously fixed to the substrate surface. is there. However, if a high-pressure spray tube is used, the substrate is quickly wetted with pure water in the form of a curtain, so that a surfactant (foreign matter) such as a silane coupling agent is unlikely to be fixed, and the pure water stays on the substrate. Since it flows in a curtain-like manner, the occurrence of uneven cleaning can be prevented.

In recent years, in the production of liquid crystal panels,
With the improvement of the cleaning ability before coating the alignment film and the clean room atmosphere, the adhesion between the substrate and the alignment film is poor, and the phenomenon that the alignment film is repelled hardly occurs. Cases in which an adhesion enhancer such as a silane coupling agent as shown in 77677 is used are rare and generally not used.

[0013]

Although these measures have prevented abnormal alignment (uneven alignment) on the substrate, in recent years it has been a problem with conventional vertical electric field drive type panels (hereinafter referred to as TN panels). An unusual level of alignment abnormality has become a problem in a lateral electric field drive type panel (hereinafter referred to as an IPS panel).

The reason is mainly due to the panel structure.
The former (TN panel) is generally a normally white mode panel, while the latter (IPS panel)
Is a normally black mode panel. The reason why the cleaning unevenness becomes apparent in the latter is that the former has a white screen with no voltage applied, so even if there is some alignment unevenness, the screen itself is bright, so it is relatively difficult to see unevenness. Because the latter is a black screen, if the director direction of the liquid crystal (the direction in which the liquid crystal is arranged) is not a fixed direction, it becomes conspicuous as alignment unevenness.

That is, in the voltage application state, the former has a black screen, but the alignment state of the liquid crystal is in a state of rising with respect to the substrate. Even if there is unevenness, alignment unevenness does not occur if a normal voltage is applied between the transistor substrate and the color filter substrate. On the other hand, in the latter case, since the whole screen is bright and the alignment unevenness is difficult to see, as described in the no-voltage application state of the TN panel because the white screen is used, on the other hand, in the no-voltage application state, the alignment unevenness is low. Is remarkable.

The problem to be solved in the present invention is the alignment unevenness occurring in the IPS panel described above.
However, in the case of the TN panel as well, although alignment unevenness which had potentially occurred conventionally was not regarded as a problem due to the above-described circumstances.

The orientation unevenness targeted by the present invention is "unevenness" which is shifted from the normal rubbing direction in the director direction of the liquid crystal. The definition will be described by taking an IPS panel as an example for convenience. First, when macroscopically observing the uneven portion of the panel, a phenomenon in which light leaks non-uniformly in a streak-like or elliptical shape in a range of several millimeters to several centimeters in a completely black state can be confirmed. Further, the feature of this alignment unevenness is that the alignment film, that is, water flows from the alignment film end face, that is,
That is, it is generated toward the inside in the panel surface.
Next, when observed microscopically using a polarizing microscope, the above-mentioned “unevenness” is an aggregate of those having a size of about 10 to 50 μm and being shifted from the normal director direction by about 3 to 40 °. In each case, the degree of displacement of each director is different.

When the panel is disassembled, S
Even with EM observation, no foreign matter is observed at the defective portion at an observation of about 300,000 times. Similarly, no foreign matter could be observed using AFM. Under such circumstances, the substance causing the orientation unevenness targeted in the present invention is referred to as “unevenness” caused by molecular-level contamination (hereinafter referred to as “contamination”), rather than a foreign substance as described above. Is reasonable. That is, the “alignment unevenness” targeted in the present invention is different from the alignment unevenness which is the target in the related art.

The cause of the occurrence of the "unevenness of orientation" which is the object of the present invention will be clarified in the following description of the manufacturing process. After the alignment film is applied, the substrate is rubbed.At the time of this rubbing, the alignment film is shaved because the cloth and the alignment film are in physical contact with each other as described above. It is inevitable. And about several hundred to several thousand rubbing cloths are used in the manufacturing process.

Therefore, in the course of the rubbing, shavings of the alignment film (parts of the alignment film which are obviously removed as foreign matter, or
(Including those at a molecular level that cannot be recognized as foreign substances) adhere and accumulate between the hairs of the fabric and on the hair surface. Therefore, when the substrate is treated with this dirty cloth, the exposed portion of the substrate located around the substrate (the portion without the alignment film)
Then, shavings of the alignment film are attached or adsorbed.

On the alignment film, the shavings of the alignment film are more likely to be shaved than adsorbed, and the shavings are attached rather than adsorbed. It can be easily removed with a knife.
This is confirmed in the above-mentioned Japanese Patent Application Laid-Open No. 7-77677. That is, the shavings of the alignment film adhered or adsorbed to the exposed portion of the substrate include those having a normal foreign matter level and those having a contamination level targeted by the present invention. The foreign matter level can be easily removed with an air knife or the like, as in the case of the alignment film.
It cannot be removed.

In the backing test, the substrate after rubbing was dry-cleaned using an air knife, and then it was confirmed by an optical microscope of 400 times that there was no foreign matter. Spectroscopy (Micro FT-
IR) and micro-mass spectrometry (micro-MS) confirmed that diamine originated from the alignment material. In this analysis, the degree of adsorption is
It was also found that it differs depending on the material of the exposed portion of the substrate. It was found that the degree was the largest for SiNx, followed by the SiOx film, the organic insulating film, and the glass, and the smallest for the ITO film.

From the above results, it can be concluded that the foreign matter level caused by scraping of the alignment film adhered on the alignment film and the exposed portion of the substrate can be easily removed even by a conventional method using an air knife. However, contamination caused by the alignment film adsorbed on the periphery of the substrate cannot be removed by a dry cleaning method such as an air knife.
That is, it must be a wet cleaning method using pure water.

However, in the simple single-wafer cleaning method using a transport roller used in the conventional method, water is first removed.
Hits the exposed portion of the substrate without the alignment film, and
Since it flows on the alignment film, at that time, contamination caused by the alignment film adsorbed on the exposed portion of the substrate also flows on the alignment film. At this time, the contaminants that have flowed in are re-adsorbed on the alignment film, that is, on the panel display portion in a state in which the alignment sequence is random. As a result, during the liquid crystal display, the director direction of the liquid crystal causes the alignment unevenness which deviates from the normal direction as described above.

The fatal problem of this conventional cleaning method is that
By controlling only the flow of water and paying attention only to the elimination of water puddles, the contamination due to the alignment film is adsorbed on the exposed portion of the substrate around the alignment film, and the alignment film surface immediately after rubbing is The fact that they have just rearranged the molecules, have very high surface activity, and overlook that impurities such as contamination are very easily adsorbed. Therefore, in the cleaning after the rubbing, the contaminants adhering to the exposed portion of the substrate are adsorbed on the alignment film, that is, in the panel display surface, and often cause the alignment non-uniformity, thereby causing the deterioration of the display quality and the yield.

A method for suppressing or avoiding the uneven alignment is to prevent the alignment film from coming into contact with the contaminants adhering to the exposed portion of the substrate while the surface of the alignment film is active for adsorption. As a method of inactivating the surface of the alignment film after rubbing, first, a method of leaving it in the air for a long time and hydrating the surface can be considered. However, in terms of panel production, throughput surface, siloxanes and phthalates due to the clean room components contained in the clean room air, and other organic substances such as cleaning liquids and sealing materials due to other process members from the air, A slight adhesion to the alignment film surface is conceivable, and it is not advisable to suppress or avoid alignment unevenness.

Therefore, the present inventor has devised, as another method, a method of forcibly reducing the adsorption activity of the alignment film, which is the gist of the present invention. The point of this method is that clean pure water is allowed to flow directly onto the surface of the alignment film located at the center of the substrate, and first, the adsorption activity on the surface of the alignment film is reduced.

That is, an object of the present invention is to clean water by flowing clean water directly onto the surface of the alignment film to reduce the adsorptive activity on the surface of the alignment film. Accordingly, an object of the present invention is to provide a method for manufacturing a liquid crystal display device having no alignment unevenness due to contamination.

[0029]

Therefore, in the present invention,
In a cleaning process after applying an alignment film on a substrate and performing a rubbing process, the substrate is moved from the center to the periphery of the substrate.
I, flowing pure water to the surface of the alignment film, the step of performing the steps of: be overlooked <br/> the adsorption activity of the alignment film, followed by a pure water shower process, the cleaning of the bare portion of the <br/> substrate And characterized in that:

In this case, as an embodiment of the present invention, the spray angle of the nozzle shower in the cleaning step is 60 degrees to 120 degrees with respect to the cleaning direction of the substrate, and the cleaning water is spread on the substrate. In addition, in the case of a multi-panel substrate in which a plurality of alignment planes are continuous, it is desirable that a nozzle shower be used for each alignment plane.

According to this method, even if the contamination adsorbed on the exposed portion of the substrate enters the alignment film, that is, into the panel display surface, the contamination is not adsorbed and may cause uneven alignment. Absent. In addition, even if a lower alcohol or other chemical solution is dropped into the cleaning liquid in addition to pure water, the alignment unevenness can be suppressed, but since the alignment regulating force is more relaxed than pure water, the performance and the cost are reduced. -It is not particularly advantageous in terms of handling.

Further, for the reasons of the text, in the description so far, only the contamination caused by the alignment film adsorbed on the exposed portion of the substrate has been described. However, the bleaching agent caused by the rubbing roll (especially, such as cotton) Natural fiber)
Analysis and experiments have also shown that contaminants such as synthesis aids and surfactants (particularly contained in synthetic fibers such as rayon) also cause "alignment unevenness" which is the object of the present invention. This technical problem and solution are also included in the scope of the present invention.

[0033]

Next, embodiments of the present invention will be described in detail with reference to the drawings. FIG. 1 is a schematic diagram for explaining a cleaning process using an inline-type single-wafer cleaning apparatus, and FIG. 2 is a schematic perspective view showing a state of cleaning a substrate by a nozzle shower. FIG. 3 is a schematic front view showing a state of cleaning the substrate by a nozzle shower of a transport roller type. Similarly, FIG. 4 is a schematic front view of a nozzle shower of a spin type. Further, FIG. 5 is a schematic plan view showing the state of the nozzle shower of the transfer roller moving method over time, and FIG. 6 is a schematic perspective view showing the arrangement of the nozzle shower for the multiple substrate.

(First Embodiment) In this embodiment, the rubbed substrate 101 is transferred to a rubbing cleaning step. The substrate is transported by the transport roller 102, and is first applied to a nozzle shower unit 103, and then subjected to a surface treatment in the order of a direct pure water shower unit 104, an ultrasonic falling water shower unit 105, and an air knife / drying unit 106. . The novel point of the present invention is that a nozzle shower unit 103 is newly provided to process a substrate, and the other units are not particularly different from the conventional example.

The substrate 101 transported to the nozzle shower unit 103 is stopped after being transported until the center of the applied alignment film 107 is located directly below the nozzle shower 108. Thereafter, the pure water flows down from the nozzle shower 108 to be washed, and the pure water flows on the substrate 101 from the orientation surface side to the substrate exposed surface.

Then, two seconds after the end of the flow of the pure water, the substrate is immediately transferred to the direct pure water shower unit 104. In each unit after the direct pure water shower unit 104, the substrate is transported without stopping, as in the processing in the conventional single-wafer washing machine. The transport speed is 0.
9 m / min. The pure water flow rate of the direct pure water shower nozzle 109 was 40 liter / min.

Also, the ultrasonic falling water shower unit 10
5 includes, for example, an MS shower SMS-
Ultrasonic transmitter for 420 (eg, SMP-080
3) 110 is used, which results in 1.6 MH
In step z, the substrate was washed at a flow rate of pure water of 45 l / min. Further, the air knife 111 used in the air knife / drying unit 106 is made of SUS304, and has a slit width of 0.15 mm and a dry air flow rate of 180.
Liters per minute.

The nozzle shower unit 103 used first in the present invention will be described in more detail with reference to FIG. The following four types of structures of the nozzle shower 108 were studied. These are the types in which water drops straight and straight (jet angle 0 °), jet angles 60 °, 90 °, 1
20 °, each of which is circular and falls on a substrate at a wide angle.

The pure water from the nozzle shower 108 flows down to the center of the alignment film 107 printed on the substrate 101.
Thereafter, the pure water spreads from the central portion of the alignment film to the periphery, and after cleaning the substrate exposed portion 201, flows down from the substrate end surface to the outside of the substrate. The relationship between the nozzle shower falling condition and the alignment unevenness is shown in Tables 1 to 4 (表: no alignment unevenness, X: alignment unevenness).

[0040]

[Table 1]

[0041]

[Table 2]

[0042]

[Table 3]

[0043]

[Table 4] As a result, it was found that, regardless of the shape of the nozzle, if the flowing conditions of pure water were appropriate, no alignment unevenness would occur. Also,
It was confirmed that all of the substrates in which alignment unevenness occurred were transferred to the direct pure water shower unit 104 without covering the entire surface of the alignment film with pure water. It is concluded that the contamination adsorbed on the substrate exposed part 201 was carried on the alignment film surface after the direct pure water shower unit 104 with the surface of the alignment film remaining in an adsorption active state.

The size of the substrate used in the experiment was 3
It was a non-alkali glass of 60 × 470 mm size, and the size of the printed alignment film was 320 × 410 mm. The printing position was assigned to the center of the substrate.

Next, a specific operation of the nozzle shower unit 103 used in this embodiment will be described with reference to FIG. When the substrate is transported to a fixed position of the nozzle shower unit 103 (the center position of the alignment film), the air knife 301
Dry air is released from the The air knife conditions were slit width: 0.2 mm, and the air release amount was 2
00 liter / min. Then, the nozzle shower 10
Pure water flows down from 8. The nozzle shower unit 103 was provided with a waste water pipe 302 of pure water and an exhaust pipe 303.

The purpose of the air knife 301 is to prevent the pure water mist from scattering to other units, and the purpose of the exhaust pipe 303 is to prevent the pure water mist from re-adhering to the substrate. To do that.

According to the present invention, after the adsorption activity on the surface of the alignment film after rubbing is first reduced, the contamination adsorbed on the exposed portion of the substrate located at the peripheral portion of the substrate is washed away, so that even if the contamination flows on the alignment film, the adsorption is performed. I will not do it. Therefore, no alignment unevenness occurs.

(Second Embodiment) As a second embodiment of the present invention, FIG. 4 shows an example in which the system of the nozzle shower unit 103 is changed from the conveying roller system to the spin system. Here, the nozzle shower unit 103 includes:
The purpose of arranging the exhaust pipe 402 is the same as that of the transport roller system shown in FIG. The shutter 403 opens and closes when the substrate is taken in and out, and its purpose is to prevent pure water from scattering outside. The substrate 101 was held by the spin chuck 404, and the spin condition was 20 rpm for 4 seconds. The shape of the substrate used is the same as that in the first embodiment.

The nozzle shower 108 was of a 60 ° type, and the flow of pure water was started at the same time as the spin rotation, and was set to 8 liters / minute for 5 seconds. Here, the substrate processing conditions after the nozzle shower unit 103 were the same as in the first embodiment. As a result of panel assembly, it was confirmed that when the substrate was processed under these conditions, no alignment unevenness occurred. As described above, it was found that the spin method was also effective, as in the first embodiment.

(Third Embodiment) Next, a third embodiment of the present invention will be described.
An embodiment will be described. In the configuration of the transport roller method described above, the substrate is temporarily stopped when performing the nozzle shower process. However, in this method, tact is reduced on the production line. Therefore, in order to improve the productivity, the nozzle shower processing was performed without stopping the substrate.

The substrate used in the experiment is the same as in the first embodiment. This will be described in detail with reference to FIG.
The substrate used here is the same as that used in Example 1. Here, the substrate 101 is moved 0.9 m /
When transported to the nozzle shower unit at the speed of minutes,
The transmission sensor detects its presence and turns on the sequencer timer.

During the operation of the timer, pure water is injected from the nozzle shower 108 according to the set sequence.
Flowed down on the substrate. That is, when the substrate has passed under the nozzle shower 200 mm from its edge, pure water is allowed to flow down at 8 liters / minute for 5 seconds. The nozzle used here was of a 60 ° type. The processing conditions after the processing of the nozzle shower unit were the same as those in the first embodiment.

As a result of assembling the panels, it is understood that when the substrate is processed under the above conditions, the alignment unevenness does not occur. Therefore, instead of the method of stopping the substrate in the first embodiment, the moving method is used. It has been found that the object of the present invention can be achieved.

(Fourth Embodiment) In the fourth embodiment of the present invention, a case where a plurality of panels are formed from one substrate is shown. This will be specifically described with reference to FIG. The size of the substrate here is 360 × 470 mm as in the first embodiment, and the size of the printed alignment film is 320 mm in the short side direction × 19 in the long side direction of the substrate.
0 mm, and two alignment films were arranged in parallel in the long side direction of the substrate. The distance from the edge of the substrate to the edge of each alignment film and the distance between these alignment films were each 30 mm.

The substrate on which such an alignment film pattern was printed was used in the first embodiment (under the flow of pure water: 10 liters / minute, 5 seconds, 60 ° type nozzle) and the second embodiment.
The processing was performed in exactly the same manner as in the third embodiment, and the panels were assembled. As a result, alignment unevenness was observed under all conditions. The reason why the alignment unevenness occurs here is that in the active state before the entire surface of the alignment film is covered with pure water, the contamination adsorbed on the exposed portion of the substrate flows into the alignment film together with the pure water. .

Therefore, a case was examined in which the same single-wafer cleaning machine was used to clean a multi-cavity substrate using the nozzle shower 601 shown in FIG. Here, the shape of the nozzle shower has a slit width of 0.2 m.
m, length: 220 mm, and pure water flows down like a curtain. The installation position of the nozzle shower was set at the center of each surface of the alignment film printed on the substrate. The method adopted in this embodiment is a transport roller method, in which the substrate is stopped and pure water is jetted.

Here, at 20 liters / minute for 5 seconds,
Pure water was allowed to flow down. When the result of manufacturing a panel under these conditions is verified, no alignment unevenness is observed. The reason is that when the alignment film surface is in an active state, pure water containing contaminants does not flow onto the alignment film surface.

[0058]

According to the present invention, as described in detail above, clean water is allowed to flow directly onto the alignment film surface to reduce the adsorptive activity on the alignment film surface, and then pure water is allowed to flow to the exposed portion of the substrate. Then, by washing, it is possible to provide a liquid crystal display device having no alignment unevenness due to contamination.

[Brief description of the drawings]

FIG. 1 is a schematic diagram for explaining a cleaning step using an inline-type single-wafer cleaning apparatus according to the present invention.

FIG. 2 is a schematic perspective view showing a state of cleaning a substrate by a nozzle shower.

FIG. 3 is a schematic front view showing a state of cleaning a substrate by a nozzle shower of a transport roller type.

FIG. 4 is a schematic front view of a spin-type nozzle shower.

FIG. 5 is a schematic plan view showing a state over time of a nozzle shower of a transfer roller moving type.

FIG. 6 is a schematic perspective view showing an arrangement of a nozzle shower for a multi-surface substrate.

FIG. 7 is a schematic view of a conventional example.

FIG. 8 is a schematic view of another conventional example.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 101 Substrate 102 Transport roller 103 Nozzle shower unit 104 Direct pure water shower unit 105 Ultrasonic falling shower unit 106 Air knife / drying unit 107 Orientation film 108, 601 Nozzle shower 109 Direct pure water shower nozzle 110 Ultrasonic oscillator 111, 301, 802 Air knife 201 substrate exposed part 302, 401 pure water waste liquid pipe 303, 402 exhaust pipe 403 shutter 404 spin chuck 701, 702, 703, 704 nozzle 801 pre-processing chamber 803 high-pressure spray pipe

Claims (3)

(57) [Claims] 1. A alignment film was coated on a substrate in a cleaning step after it was Rabin <br/> grayed process, or the central portion of the substrate
Toward the Luo periphery, flushed with pure water on the surface of the alignment film, comprising the steps of to overlooked the adsorption activity of the orientation plane, then, a pure water shower punished
The sense, and a step of cleaning the exposed portion of the substrate
A method for manufacturing a liquid crystal display device, comprising: Respect 2. A cleaning direction of the substrate, wherein the cleaning
2. The method according to claim 1, wherein the spray angle of the nozzle shower in the step is 60 degrees to 120 degrees , and the cleaning water is spread on the substrate. 3. The manufacturing method of a liquid crystal display device according to claim 1, wherein a nozzle shower is used corresponding to each of the plurality of alignment planes in a substrate having a plurality of alignment planes. Method.