JP3179313B2 - Electronic component manufacturing method - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electronic unit such as a varistor.
The present invention relates to a method for manufacturing a product .

[0002]

2. Description of the Related Art Conventionally, in order to protect an element from an external atmosphere, a protective film is provided on an outer peripheral portion thereof.

[0003]

The conventional protective films made of glass, for example, are peeled by impact or heat or immersed in cracks, and those formed of resin have a moisture absorbing property. Has a problem of low reliability.

Accordingly, an object of the present invention is to solve the above-mentioned problems and to provide a method for manufacturing an electronic component having excellent moisture resistance.

[0005]

According to the present invention, at least a pair of electrodes are formed on the surface of an element, and electroless plating is performed only on the surface of the element other than the electrode forming portion.
To form a dense metal coating layer, then heat-treat the device in an oxidizing atmosphere to form a dense protective layer made of a metal oxide obtained by oxidizing the metal coating layer, and further form a plating layer on the electrode surface. To form.

[0006]

[Function] A metal coating layer is formed by electroless plating.
Heat treatment in an oxidizing atmosphere
Very dense and high resistance
A protective layer can be formed. This protective layer is made of metallic acid
It is hard because it is formed of a compound.

Therefore , when the structure of the element is porous,
However, due to this dense protective layer, the surrounding environment,
Be less susceptible to air, gas, acids, alkalis, etc.
Can be. Even when the surface resistance of the element is low,
By forming a protective film, for example, the leakage current can be controlled.
And prevents plating flow, etching by plating solution
Wear. In addition, some of the protective layer diffuses to the surface of the device,
By doing so, the adhesion strength of the protective film to the device is extremely high
And peeling or cracking due to impact or heat is unlikely to occur. So
As a result, the device with a dense, homogeneous and rigid protective layer
Strength during the manufacturing process and during mounting on substrates
Prevents damage and distortion such as cracks caused by impact
it can.

[0008]

EXAMPLES (Example 1) will be described with reference to FIG. 1 have the first embodiment Nitsu of the present invention.

In FIG. 1, reference numeral 1 denotes a varistor element,
A plurality of internal electrodes 2 are provided inside, and external
A unit electrode 3 is provided. The varistor element 1 is made of SrT
iO _ThreeAs a main component and Nb as a subcomponent_TwoO_Five, Ta
_TwoO_Five, SiO_Two, MnO_TwoAnd the like. Ma
The internal electrode 2 has Ni as a main component and L as a subcomponent.
i _TwoCO_ThreeAnd the like. Further outside
The lower electrode 3 has Ni as a main component and a sub component as a sub-component.
Li_TwoCO_ThreeAnd the upper layer 3b is made of Ag.
It is formed. In the above configuration, the varistor element
The surface of the element other than the electrode forming portion of the upper layer 3b of the element 1 is protected.
Layer 5 has been deposited. Furthermore, on the surface of the upper layer 3b
Ni plating layer 4a and solder plating layer 4b are formed
You.

FIG. 3 shows a manufacturing process. As shown in (7), a ceramic sheet 1a was produced by mixing, pulverizing, slurrying, and forming a sheet.

[0011] The ceramic sheet 1a and the internal electrode 2 are laminated (8), and cut (9).
0) and chamfered (11).

Next, a lower layer 3a is formed on the end face of the varistor element 1.
Is applied (12) to form a Ni external electrode,
Reduction firing (13) was performed at 00 ° C., and then an Ag external electrode to be the upper layer 3b was applied (15).

Further, a resist film made of glue or resin is provided on the surface of the applied upper layer 3b.
A plating layer was adhered (14) and heated (700) for reoxidation at 700 to 850 ° C. to form a baked Ag external electrode 3b and a protective layer 5 of metal oxide made of electroless Ni plating. Next, after the resist film carbonized at the time of heating (16) was removed, a Ni plating layer 4a and a solder plating layer 4b were attached on the upper layer 3b (17).

In the varistor element 1 obtained in the first embodiment,
A protective layer 5 having a dense structure is formed on the entire surface other than the upper layer 3b forming portion of the varistor element 1, and a Ni plating layer 4a and a solder plating layer 4b are formed on the surface of the upper layer 3b. Therefore, (I) the airtight insulating property of the varistor element 1 is extremely high,
It can reliably protect against water, gas, acid, alkali, etc., improves moisture resistance, improves chemical resistance (for example, prevention of element etching by a plating solution), reduces surface leakage, and reduces external electrode 3 The effect of preventing the migration of the metal is exhibited.

(II) Since the surface of the varistor element 1 is covered with the hard protective layer 5, the mechanical strength is improved, and the varistor element 1 is resistant to impact, and prevents the occurrence of external damage such as cracks and chips and distortion. Can be.

(III) Since the surface of the external electrode 3 is covered with the plating layer 4, it exhibits excellent mountability as an electronic component.

(IV) Since a part of the metal oxide protective layer 5 is diffused and reacted on the surface of the varistor element 1, the adhesion strength is extremely high, and peeling or cracking due to impact or heat is unlikely to occur.

(V) When the protective layer 5 is formed, the volume is increased by oxidizing the metal, so that a denser protective film can be formed. It had such features.

(Embodiment 2) Hereinafter, a second embodiment of the present invention will be described with reference to FIG.

After re-oxidizing (16) the varistor element 1 provided with the upper layer 3b in the same manner as in Example 1,
R) ₄ (R is an alkyl group), a silicon compound represented by (Chemical Formula 4), Ti (OR) ₄ (R is an alkyl group), a titanium compound represented by (Chemical Formula 5), Al (OR) ₃ (R is Dipping in a liquid containing at least one of aluminum compounds represented by (alkyl group) and (formula 6), and attaching a glass-forming substance to the surface of the varistor element 1 (18)
And, embedded in _{SiO 2, TiO 2, Al 2} O 3, MgO, in powder of a reaction inhibitor consisting of at least one of ZrO _2, was heat treated (19) at 300 to 850 ° C..

[0021]

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[0022]

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[0023]

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Thereafter, the chamfer (20), the Ni plating layer 4
a and the solder plating layer 4b were attached (17) to obtain an electronic component having the glass layer 21 on the surface of the protective layer 5 as shown in FIG.

In the second embodiment, the deposition (18) of the glass-forming substance and the heat treatment (19) are performed only once, but a more uniform glass layer 21 can be formed by performing a plurality of times. Can be.

Then, the formed glass layer 21
The adhesion strength is extremely high because a part of the protective layer 5 does not simply adhere to the outer surface but diffuses and reacts in the protective layer 5. Further, Bi ₂ O ₃ , Sb
_This is more significant when at least one of ₂ O ₃ is contained.

As described above, by newly forming the glass layer 21 on the surface of the protective layer 5 made of a metal oxide, the features described in the above (I) to (V) are further exhibited. In particular, even if the varistor element 1 is put into a gas or a solution having a strong reducing property, the metal oxide of the protective layer 5 may be damaged without being reduced because the glass layer 21 is formed. Did not.

The action of the reaction inhibitor not only suppresses the diffusion reaction between the protective layer 5 and the glass layer 21 but also prevents the varistor elements 1 from sticking to each other.

Further, Al is contained in the above various liquids._TwoO_Three,
TiO_Two, ZnO, SiC, Si_ThreeN _Four, SiO_Two, Carbon fiber
Needle-like fibers containing at least one fiber or glass fiber
When the crystal component is dispersed, the thermal
Strength and mechanical strength are improved, especially when heat shock
It can suppress the generation and spread of cracks and peeling that occur.
did it. In addition, it is maintained by the anchor effect of needle-like crystal components.
The adhesive strength with the protective layer 5 became stronger. In this case, the variance
It is better that the particle size of the acicular crystal component to be made is fine and uniform.
More remarkable. In addition, the above-mentioned reaction inhibitor is dispersed in powder.
The same effect was confirmed.

Further, Bi ₂ O ₃ , Sb ₂
This was more pronounced when at least one of O ₃ was included. Furthermore, the same effect was obtained by forming a silicone-based or epoxy-based resin on the surface of the protective layer 5.

(Embodiment 3) Hereinafter, a third embodiment of the present invention will be described.

After the steps (7) to (13) and (15) shown in FIG.
An electroless Ni plating layer in which at least one powder of at least one of O ₂ , TiO ₂ , Al ₂ O ₃ , MgO, and ZrO ₂ is dispersed is attached (14), and the following steps (16) and (17) After that, an electronic component having the protective layer 5 excellent in reduction resistance shown in FIG. 1 was obtained.

The protective layer 5 obtained in Example 3 was obtained by adding Ni and SiO ₂ , TiO ₂ , Al ₂ O ₃ , M
At least one powder of gO and ZrO ₂ reacts to form a protective layer 5 having excellent reduction resistance. In this case, the particle size of the powder to be dispersed is fine and uniform, and
Higher purity was more pronounced. In addition to the above-mentioned various powders, a glass powder had the same effect.

As described above, in the varistor element 1 obtained in each of the above-described Examples 1 to 3, since the protective layer 5 having a dense structure is formed on the surface of the varistor element 1 other than the electrode forming portion, It is less affected by the surrounding environment, for example, humidity, gas, acid, alkali and the like. Further, since the surface is covered with the hard protective layer 5, the mechanical strength is improved.

Important points in the manufacturing process are as follows: (I) When attaching an electroless Ni plating layer or attaching a glass-forming substance, make sure that no impurities adhere to the surface of the varistor element 1. Then, wash thoroughly with pure water or ion-exchanged water.

(II) Since the liquid containing the glass-forming substance is hydrolyzed, it is preferable to sufficiently immerse the varistor element 1 after removing its water content.

(III) When dispersing the powder in the electroless Ni plating solution, it is desirable to sufficiently stir the powder to improve the dispersibility.

The protective layer 5 formed on the surface of the varistor element 1 has a part of its surface affected by hydrogen gas generated during the step of attaching (17) the Ni plating layer 4a and the solder plating layer 4b. It may be reduced and the resistance value may decrease.
Therefore, in order to prevent this phenomenon, (IV) it is desirable to form the glass layer 21 on the surface of the protective layer 5 to prevent the influence of hydrogen gas as described in the second embodiment.

(V) As shown in the third embodiment, it is preferable to form the reduction-resistant protective layer 5 to prevent the influence of hydrogen gas.

(VI) After the plating step (17), it is desirable to oxidize the protective layer 5 whose surface has been partially reduced using an ammonia solution of hydrogen peroxide. In this case, an alkaline solution that does not affect the varistor element 1 may be used. Further, since this solution has a cleaning action, it can be used as a cleaning solution after the plating step (17).

As described in the second embodiment, when the glass layer 21 is formed, the glass layer 2 is also formed on the surface of the upper layer 3b.
1 may be formed, and the plating layer 4 may not easily adhere even when the plating step (17) is performed. Therefore,
In order to solve this, (VII) a resist film made of a paste made of a polysaccharide such as laundry paste or ethyl cellulose, a resist film made of polyvinyl alcohol, vinyl acetate, or the like is provided on the surface of the upper layer 3b in advance, and then a glass-forming substance is attached ( It is desirable to have a step of 18), a heat treatment (19), carbonization of the resist film, and removal with an ultrasonic cleaner or the like. Then, when forming this resist film, it is possible to know whether the resist film has been formed uniformly by mixing and coloring dyes and pigments. In the above embodiment, the protective layer 5 made of metal oxide formed on the surface of the varistor element 1 is shown only for Ni. However, any other oxide having high resistance and chemical resistance can be used. Something like that is fine. And
The method of formation was also shown only for electroless plating,
The same effect can be obtained by forming by vapor deposition, sputtering, dipping, thermal spraying, printing, or the like.

(Embodiment 4) Hereinafter, a fourth embodiment of the present invention will be described with reference to FIG.

In FIG. 6, reference numeral 1 denotes a varistor element,
A plurality of internal electrodes 2 are provided inside, and external
A unit electrode 3 is provided. The varistor element 1 is made of SrT
iO _ThreeAs a main component and Nb as a subcomponent_TwoO_Five, Ta
_TwoO_Five, SiO_Two, MnO_TwoAnd the like. Ma
The internal electrode 2 has Ni as a main component and L as a subcomponent.
i _TwoCO_ThreeAnd the like. Further outside
The lower electrode 3 has Ni as a main component and a sub component as a sub-component.
Li_TwoCO_ThreeAnd the upper layer 3b is made of Ag.
It is formed. In the above configuration, the varistor element
High-resistance protective layer 5 adheres to the entire surface except the end face of element 1
Has been established. Further, a Ni plating layer is formed on the surface of the upper layer 3b.
4a and a solder plating layer 4b are formed.

FIG. 8 shows a manufacturing process. As shown in (7), a ceramic sheet 1a was produced by mixing, pulverizing, slurrying, and forming a sheet.

The ceramic sheet 1a and the internal electrode 2 are laminated (8), cut (9), and de-fired and calcined (1).
0) and chamfered (11).

Next, a lower layer 3a is formed on the end face of the varistor element 1.
Is applied (12) to form a Ni external electrode,
After reducing and baking at 00 ° C. (13), a resist film formed of glue or resin is provided on the end surface of the element, and then an electroless Ni plating layer is attached (14), and the resist is washed with water or an organic solvent. After the removal, an Ag external electrode serving as the upper layer 3b is applied (15), and heated (16) for reoxidation at 700 to 850 ° C. to protect the baked Ag external electrode 3b and a metal oxide made of electroless Ni plating. Layer 5 was formed. next,
The Ni plating layer 4a and the solder plating layer 4b were attached (17) on the upper layer 3b.

In the varistor element 1 obtained in this embodiment,
A protective layer 5 having a dense structure is formed on the entire surface of the varistor element 1 except for the end face, and a Ni layer is formed on the surface of the upper layer 3b.
Due to the structure in which the plating layer 4a and the solder plating layer 4b are formed, (I) the airtight insulation of the varistor element 1 is extremely high,
It can reliably protect against water, gas, acid, alkali, etc., improves durability, improves chemical resistance (for example, prevention of element etching by plating solution), reduces surface leakage, reduces external electrode Effects such as prevention of migration are exhibited.

(II) Since the surface of the varistor element 1 is covered with the hard protective layer 5, the mechanical strength is improved, and the varistor element 1 is resistant to impact, and prevents the occurrence of external damage such as cracks and chips and distortion. Can be.

(III) Since the electrode surface is covered with the plating layer, excellent mountability as an electronic component is exhibited.

(IV) Since a part of the metal oxide protective layer 5 is diffused and reacted on the surface of the varistor element 1, the adhesion strength is extremely high, and peeling or cracking due to impact or heat is unlikely to occur.

(V) When the protective layer 5 is formed, the volume is increased by oxidizing the metal, so that a denser protective film can be formed. It had such features.

Embodiment 5 Hereinafter, a fifth embodiment of the present invention will be described with reference to FIG.

After re-oxidizing (16) the varistor element 1 provided with the upper layer 3b in the same manner as in Example 3, the Si (O)
R) ₄ (R is an alkyl group), a silicon compound represented by (Chemical Formula 4), Ti (OR) ₄ (R is an alkyl group), a titanium compound represented by (Chemical Formula 5), Al (OR) ₃ (R is Dipping in a liquid containing at least one of aluminum compounds represented by (alkyl group) and (formula 6), and attaching a glass-forming substance to the surface of the varistor element 1 (18)
_{And, SiO 2, TiO 2, Al} 2 O 3, embedded MgO, the powder inside the reaction inhibitor consisting of at least one of ZrO _2, was heat treated (19) at from 300 to 850 ° C..

Thereafter, the chamfer (20), the Ni plating layer 4
a and the solder plating layer 4b were attached (17) to obtain an electronic component having the glass layer 21 on the surface of the protective layer 5 as shown in FIG.

In the fourth embodiment, the deposition (18) of the glass-forming substance and the heat treatment (19) are performed only once, but a more uniform glass layer 21 can be formed by performing it a plurality of times. Can be.

Then, the formed glass layer 21
The adhesion strength is extremely high because a part of the protective layer 5 is diffused and reacted instead of simply adhering to the outer surface. Further, when the glass forming substance contains at least one of Bi ₂ O ₃ and Sb ₂ O ₃ , it is more remarkable.

As described above, by newly forming the glass layer 21 on the surface of the protective layer 5 made of a metal oxide, the features described in the above (I) to (V) are further exhibited. In particular, even if the varistor element 1 is put into a gas or a solution having a strong reducing property, the metal oxide of the protective layer 5 may be damaged without being reduced because the glass layer 21 is formed. Did not.

The action of the reaction inhibitor not only suppresses the diffusion reaction between the protective layer 5 and the glass layer 21 but also prevents the varistor elements 1 from sticking to each other.

Further, Al is contained in the above various liquids._TwoO_Three,
TiO_Two, ZnO, SiC, Si_ThreeN _Four, SiO_Two, Carbon fiber
Needle-like fibers containing at least one fiber or glass fiber
When the crystal component is dispersed, the thermal
Strength and mechanical strength, especially cracks generated by heat shock, etc.
The occurrence and spread of racks and peeling could be suppressed.
Further, the protective layer 5 is formed by the anchor effect of the acicular crystal component.
Became stronger. In this case, the needle to be dispersed
It is more remarkable that the particle size of the crystalline component is fine and uniform
there were. The same effect can be obtained by dispersing the above-mentioned reaction inhibitor in powder.
The effect was confirmed.

Further, Bi ₂ O ₃ , Sb ₂
This was more pronounced when at least one of O ₃ was included. Furthermore, the same effect was obtained by forming a silicone-based or epoxy-based resin on the surface of the protective layer 5.

(Embodiment 6) Hereinafter, a sixth embodiment of the present invention will be described.

After the steps (7) to (13) shown in FIG. 10 in the same manner as in Examples 4 and 5, SiO ₂ , Ti
Attaching an electroless Ni plating layer in which at least one powder of at least one of O ₂ , Al ₂ O ₃ , MgO and ZrO ₂ is dispersed (14), and going through the following steps (15) to (17) As a result, an electronic component having the protective layer 5 excellent in reduction resistance shown in FIG. 6 was obtained.

The protective layer 5 obtained in Example 6 was obtained by adding Ni and SiO ₂ , TiO ₂ , Al ₂ O ₃ , M
At least one powder of gO and ZrO ₂ reacts to form a protective layer 5 having excellent reduction resistance. In this case, the particle size of the powder to be dispersed is fine and uniform, and
Higher purity was more pronounced. In addition to the above-mentioned various powders, a glass powder had the same effect.

As described above, in the varistor element 1 obtained in Examples 3 to 6 described above, since the protective layer 5 having a dense structure is formed on the entire surface except for the end face of the varistor element 1, the surrounding environment For example, it is hardly affected by humidity, gas, acid, alkali and the like. Further, since the surface is covered with the hard protective layer 5, the mechanical strength is improved.

Important points in the manufacturing process are as follows: (I) When attaching an electroless Ni plating layer or attaching a glass-forming substance, make sure that no impurities adhere to the surface of the varistor element 1. Then, wash thoroughly with pure water or ion-exchanged water.

(II) Since the liquid containing the glass-forming substance is hydrolyzed, it is preferable that when immersing the varistor element 1, the water be sufficiently removed before immersion.

(III) When dispersing the powder in the electroless Ni plating solution, it is desirable to sufficiently stir the powder to improve the dispersibility.

The protective layer 5 formed on the surface of the varistor element 1 is partially affected by the hydrogen gas generated during the step (17) of attaching the Ni plating layer 4a and the solder plating layer 4b. It may be reduced and the resistance value may decrease.
Therefore, in order to prevent this phenomenon, (IV) it is desirable to form the glass layer 21 on the surface of the protective layer 5 to prevent the influence of hydrogen gas as shown in the fifth embodiment.

(V) As described in the sixth embodiment, it is desirable to form the reduction-resistant protective layer 5 to prevent the influence of hydrogen gas.

(VI) After the plating step (17), it is desirable to oxidize the protective layer 5 whose surface has been partially reduced using an ammonia solution of hydrogen peroxide. In this case, an alkaline solution that does not affect the varistor element 1 may be used. Further, since this solution has a cleaning action, it can be used as a cleaning solution after the plating step (17).

As described in the fifth embodiment, when the glass layer 21 is formed, the surface of the upper
1 may be formed, and the plating layer may not easily adhere even when the plating step (17) is performed. Therefore, in order to solve the problem, (VII) a resist film made of a paste made of a polysaccharide such as laundry paste or ethyl cellulose or a resist film made of polyvinyl alcohol, vinyl acetate, etc. is provided on the surface of the upper layer 3b in advance, and then a glass-forming substance is formed. It is desirable to have a step of adhering (18), heat-treating (19), carbonizing the resist film, and removing it with an ultrasonic cleaner or the like. When forming this resist film, it is possible to know whether or not the resist film has been formed uniformly by mixing a dye or a pigment. In addition,
In the above Examples 4 to 6, the metal oxide protective layer 5 formed on the element surface is shown only for Ni. However, any other oxide having a high resistance and a chemical resistance can be used. May be anything. Although the method for forming the same is described only for electroless plating, similar effects can be obtained by forming the film by vapor deposition, sputtering, dipping, thermal spraying, printing, or the like.

In the multilayer varistors of Examples 1 to 3, the protective layer 5 is formed on the surface of the varistor element 1 except for the portion where the external electrode 3 is formed. In the multilayer varistors of Examples 4 to 6, the end face of the varistor element 1 is The protective layer 5 was formed on the entire surface except the surface.

Therefore, the multilayer varistors of Examples 4 to 6 are different from the multilayer varistors of Examples 1 to 3 in that
Migration hardly occurs between the Ag external electrode and the internal electrode 2.

Further, in Examples 1 to 6, the thickness of the Ni plating serving as the protective layer 5 is preferably 6 μm or less. The reason is that if the thickness of the Ni plating exceeds 6 μm, the Ni shrinks and the varistor element may be cracked or cracked.

In the first to sixth embodiments, a laminated varistor has been described as an example. However, the present invention relates to a capacitor using a ceramic porcelain such as a capacitor, a thermistor, a ceramic varistor, a varistor, a piezoelectric element, a ferrite, and a ceramic substrate, and a device using a ceramic porcelain. Also, the shape can be adapted to any type such as a disk type, a cylindrical type, and a laminated type.

[0076]

As described above, according to the present invention, the electroless plating
A metal coating layer and heat-treat it in an oxidizing atmosphere.
This causes the metal to oxidize and cause volume expansion
Can form a very dense and high-resistance protective layer
You. Also, this protective layer is made of metal oxide
And is hard.

[0077]

For this reason, even if the element structure is porous, the dense protective layer can make the element less susceptible to the surrounding environment, for example, moisture, gas, acid, alkali and the like.

Even when the surface resistance of the element is low, the protective layer made of a metal oxide having a high resistance on the surface can suppress, for example, leakage current, plating flow, and etching with a plating solution. .

Further, since this protective layer is hard to be cracked or distorted, and is dense, homogeneous and firm, it is possible to enhance the mechanical strength of the element surface and to prevent the occurrence of damage and distortion due to impacts during the manufacturing process and during mounting. it can.

As described above, the electronic component of the present invention is excellent in reliability and has an extremely large practical effect.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view of a varistor according to first and third embodiments of the present invention.

FIG. 2 is a sectional view of a varistor according to a second embodiment of the present invention.

FIG. 3 is a view showing a manufacturing process of a varistor according to the first embodiment of the present invention;

FIG. 4 is a manufacturing process diagram of a varistor according to a second embodiment of the present invention.

FIG. 5 is a manufacturing process diagram of a varistor according to a third embodiment of the present invention.

FIG. 6 is a cross-sectional view of a varistor according to fourth and sixth embodiments of the present invention.

FIG. 7 is a sectional view of a varistor according to a fifth embodiment of the present invention.

FIG. 8 is a manufacturing process diagram of a varistor according to a fourth embodiment of the present invention.

FIG. 9 is a view showing a manufacturing process of a varistor according to a fifth embodiment of the present invention.

FIG. 10 is a view showing a manufacturing process of a varistor according to a sixth embodiment of the present invention.

[Description of Signs] 1 Varistor element 2 Internal electrode 3 External electrode 4 Plating layer 5 Protective layer 21 Glass layer

──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-5-47510 (JP, A) JP-A-5-283207 (JP, A) JP-A-6-69003 (JP, A) JP-A-6-003 96907 (JP, A) (58) Field surveyed (Int. Cl. ⁷ , DB name) H01C 7/10

Claims (14)

(57) [Claims] At least one pair of electrodes is formed on a surface of an element.
Next, the electroless mesh is applied only to the part other than the electrode formation part of this element.
Forming a dense metal coating layer by using
Is heat-treated in an oxidizing atmosphere, and the metal coating on the element surface is
Forming a dense protective layer made of metal oxide with oxidized film layer
An electronic part for forming a plating layer on the electrode surface
Product manufacturing method. 2. A method for forming an electrode and a protective layer comprising a metal oxide.
2. The method for manufacturing an electronic component according to claim 1, wherein the forming is performed simultaneously. 3. The material for electroless plating is Ni, Cu
2. The method according to claim 1, wherein one of the main components is used.
Method for manufacturing the electronic components described above. 4. An electroless plating solution containing SiO ₂ , TiO ₂ , A
at least one of l ₂ O ₃ , MgO and ZrO ₂
2. The production of an electronic component according to claim 1, wherein a powder containing:
Method. 5. A glass powder dispersed in an electroless plating solution.
The method for manufacturing an electronic component according to claim 1. 6. After forming a plating layer on the electrode surface,
Immerse in an alkaline solution of hydrogen oxide to oxidize the protective layer
The method for manufacturing an electronic component according to claim 1. 7. A method for forming a glass layer on a surface of a protective layer.
Item 7. A method for manufacturing an electronic component according to Item 1. 8. A portion of an element surface on which an electrode is to be formed.
A metal coating layer is formed by electroless plating on the entire surface except for
To the part of the device where the electrode is to be formed.
Forming a pole and then heat treating the element in an oxidizing atmosphere
And a metal acid obtained by oxidizing the metal film layer on the element surface.
Forming a protective layer made of a compound,
And a method for manufacturing an electronic component in which a plating layer is formed. 9. A method for forming an electrode and a protective film comprising a metal oxide.
9. The method for manufacturing an electronic component according to claim 8, wherein the forming is performed simultaneously. 10. The material for electroless plating is Ni, C
9. A method according to claim 8, wherein one of the main components is u.
A method for producing the electronic component described in the above. 11. An electroless plating solution comprising SiO ₂ , TiO ₂ ,
At least one of Al ₂ O ₃ , MgO and ZrO ₂
2. The production of an electronic component according to claim 1, wherein the powder containing the above is dispersed.
Construction method. 12. A glass powder dispersed in an electroless plating solution.
9. The method for manufacturing an electronic component according to claim 8, wherein: 13. After forming a plating layer on the electrode surface,
Immerse in an alkaline solution of hydrogen peroxide to oxidize the protective layer.
9. The method for manufacturing an electronic component according to claim 8, wherein: 14. A method for forming a glass layer on the surface of a protective layer.
9. The method for manufacturing an electronic component according to claim 8.