JP3141634B2 - Semiconductor device manufacturing method and resin sealing mold - Google Patents
Semiconductor device manufacturing method and resin sealing moldInfo
- Publication number
- JP3141634B2 JP3141634B2 JP05192542A JP19254293A JP3141634B2 JP 3141634 B2 JP3141634 B2 JP 3141634B2 JP 05192542 A JP05192542 A JP 05192542A JP 19254293 A JP19254293 A JP 19254293A JP 3141634 B2 JP3141634 B2 JP 3141634B2
- Authority
- JP
- Japan
- Prior art keywords
- resin
- semiconductor element
- sealing
- removable member
- mold
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/50—Tape automated bonding [TAB] connectors, i.e. film carriers; Manufacturing methods related thereto
Landscapes
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Moulds For Moulding Plastics Or The Like (AREA)
- Injection Moulding Of Plastics Or The Like (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Wire Bonding (AREA)
Description
【0001】[0001]
【産業上の利用分野】本発明は、半導体素子の収納容器
の構造に関し、更に詳しくは、TAB方式の形態を取る
半導体素子の封止構造に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a structure of a storage container for a semiconductor device, and more particularly, to a semiconductor device sealing structure of a TAB type.
【0002】[0002]
【従来の技術】従来の、TAB方式の実装形態(以下、
「TCP」と呼ぶ。)を取った半導体素子の封止構造
(以下、「パッケージ」と呼ぶ。)の断面図を図3に示
す。2. Description of the Related Art Conventional TAB system mounting forms (hereinafter, referred to as TAB mounting forms)
Called "TCP". FIG. 3 is a cross-sectional view of the semiconductor device sealing structure (hereinafter, referred to as “package”).
【0003】図3において、ポリイミド等から成るキャ
リアテープ5の表面に銅等の導電性のある材料により回
路パターンを形成し、「TABテープ」と呼ばれる回路
基板を構成する。このTABテープの回路パターンと外
部回路とを接続する部分6をアウターリードと呼称し、
TABテープの回路パターンと半導体素子とを接続する
部分4をインナーリードと呼称する。半導体素子1は、
外部回路との電気的及び機械的接合性を向上させるため
の金等からなるバンプ3を介してTABテープのインナ
ーリード4に、ギャングボンディングと呼ばれる熱圧着
で他のインナーリードとともに一括して電気的及び機械
的に接合することでTCPとなる。この後、接続部及び
半導体素子の保護のために、アウターリードを残して樹
脂等からなるモールド封止材2でトランスファーモール
ドにより封止することでパッケージとなる。この場合、
保護する必要のある半導体素子の回路構成面(以下、
「能動面」と呼ぶ。)及びTABテープのインナーリー
ドとの電気的接合部以外の部分については必要以上の封
止樹脂が存在することになる。In FIG. 3, a circuit pattern is formed on a surface of a carrier tape 5 made of polyimide or the like by using a conductive material such as copper to form a circuit board called a “TAB tape”. The portion 6 connecting the circuit pattern of the TAB tape and the external circuit is called an outer lead,
The portion 4 connecting the circuit pattern of the TAB tape and the semiconductor element is called an inner lead. The semiconductor element 1 is
The bumps 3 made of gold or the like for improving the electrical and mechanical bonding with the external circuit are electrically connected to the inner leads 4 of the TAB tape together with other inner leads by thermocompression bonding called gang bonding. And by mechanically joining, it becomes TCP. Thereafter, in order to protect the connection portion and the semiconductor element, the package is formed by transfer molding with a mold sealing material 2 made of resin or the like while leaving the outer leads. in this case,
The circuit configuration of the semiconductor device that needs to be protected
Called "active surface". ) And other portions of the TAB tape other than the electrical joints with the inner leads have more sealing resin than necessary.
【0004】[0004]
【発明が解決しようとする課題】しかし、使用する機器
に対する軽薄短小への要求から半導体素子は高集積化が
進み半導体素子の外形は大きくなり、パッケージの外形
も従来に比べ大きくなる一方である。従って、外形の大
きい半導体素子を従来のようにパッケージにすると、半
導体素子の厚みだけは従来と同じであるため、封止に使
用するモールド樹脂の量が多くなることから、部品とし
てのパッケージの重量が半導体素子の大きさに比例して
重くなるという問題点を有することとなった。また、紫
外線消去書換え可能読みだし専用メモリー(以下、「U
VEPROM」と呼ぶ)や電荷結合素子(以下、「CC
D」と呼ぶ。)等の半導体素子の回路構成面、あるいは
光半導体素子の光学的接合部をモールド封止することが
できない半導体素子についてはTCPにした場合、トラ
ンスファーモールドによるパッケージ化が困難であると
いう問題点も有することとなった。However, due to the demand for lighter, thinner and smaller devices to be used, the integration of semiconductor elements has advanced and the outer shape of the semiconductor elements has become larger, and the outer shape of the package has become larger than before. Therefore, when a semiconductor element having a large outer shape is packaged as in the conventional case, only the thickness of the semiconductor element is the same as in the conventional case, and the amount of molding resin used for sealing increases. Has a problem that the weight increases in proportion to the size of the semiconductor element. In addition, an ultraviolet erasable rewritable read-only memory (hereinafter referred to as “U
VEPROM ") or a charge-coupled device (hereinafter referred to as" CC
D ". ), Etc., there is also a problem that it is difficult to form a package by transfer molding when a TCP is used for a semiconductor element in which a circuit configuration surface of a semiconductor element or an optical junction of an optical semiconductor element cannot be molded and sealed. It became a thing.
【0005】本発明の目的は、TCPを樹脂から成るモ
ールド封止材を使用したトランスファーモールドより封
止した場合のパッケージの重量を、従来に比べ低減する
こと、また、UVEPROM、CCD等の半導体素子の
能動面がモールド封止できない半導体素子をTCPにし
た場合にトランスファーモールドによりパッケージ化を
可能にすることにある。SUMMARY OF THE INVENTION It is an object of the present invention to reduce the weight of a package when TCP is sealed with a transfer mold using a mold sealing material made of a resin as compared with the conventional one, and to provide a semiconductor device such as a UVEPROM or a CCD. In the case where a semiconductor element whose active surface cannot be molded and sealed is made of TCP, the semiconductor element can be packaged by transfer molding.
【0006】[0006]
【課題を解決するための手段】本発明は上記目的を達成
するため下記の手段をとる。The present invention employs the following means to achieve the above object.
【0007】[0007]
【0008】本発明に関わる他の半導体装置の製造方法
は、半導体素子の電極とインナーリードとを前記電極上
のバンプを介して接続する工程と、前記半導体素子の前
記電極が形成された面において、非樹脂形成領域とすべ
き個所に樹脂封止後に除去可能な部材を配置する工程
と、前記除去可能な部材が配置された状態で前記半導体
素子の能動面のみをトランスファーモールドにより樹脂
封止する工程と、前記樹脂封止する工程の後に前記除去
可能な部材を取り除く工程と、を有することを特徴とす
る。また上記方法に加えて、前記除去可能な部材には光
透過樹脂を用いて、前記除去可能な部材を配置する工程
では、前記光透過樹脂を紫外線硬化型の接着部材で前記
非樹脂形成領域とすべき個所に貼り付けを行い、前記取
り除く工程では、前記接着部材に対して紫外線を照射
し、その後に前記光透過樹脂を取り除くことを特徴とす
る。また更に前記除去可能な部材には、耐熱性のある樹
脂が用いられることを特徴とする。また更に前記除去可
能な部材には、シリコーン樹脂が用いられることを特徴
とする。また、本発明の樹脂封止金型は、半導体素子を
封止するための樹脂封止金型であって、前記金型のキャ
ビティが封止するべく半導体素子の側面から10μm以下
の間隙になるように前記キャビティ側面が形成されたも
のからなることを特徴とする。Another method of manufacturing a semiconductor device according to the present invention includes a step of connecting an electrode of a semiconductor element and an inner lead via a bump on the electrode, and a step of connecting the inner lead to a surface of the semiconductor element on which the electrode is formed. Disposing a removable member after resin sealing at a position to be a non-resin forming region; and resin-sealing only the active surface of the semiconductor element by transfer molding in a state where the removable member is disposed. And a step of removing the removable member after the resin sealing step. In addition to the above method, in the step of disposing the removable member using a light transmitting resin for the removable member, the light transmitting resin is bonded to the non-resin forming region with an ultraviolet-curable adhesive member. In the step of sticking to a place to be removed and removing, the adhesive member is irradiated with ultraviolet rays, and then the light transmitting resin is removed. Further, a heat-resistant resin is used for the removable member. Still further, a silicone resin is used for the removable member. Further, the resin-sealing mold of the present invention is a resin-sealing mold for sealing a semiconductor element, and the cavity of the mold has a gap of 10 μm or less from a side surface of the semiconductor element to be sealed. The cavity side surface is formed as described above.
【0009】[0009]
【実施例】以下、本発明の実施例を図1、図2、図4、
図5及び図6により説明する。(手段1)に基づきTC
Pに本発明を実施した例の断面図を図1に示す。図1に
示すように、TABテープのインナーリード4と半導体
素子2を例えばギャングボンディングによりバンプ3を
介して接合し、TCPにする。次に、半導体素子とTA
Bのインナーリードの接合部、並びに半導体素子の能動
面のみをトランスファーモールドにより樹脂封止する。
トランスファーモールドでは、図6に示す様に上下或い
は左右に分割可能なモールド金型9の分割面に、樹脂を
注入することで形成するキャビティー10と呼ばれる空
洞が設けられており、このキャビティーに封止しようと
するTABに接続された半導体素子2を挟み込み、金型
を閉じキャビティーに樹脂を注入し硬化させパッケージ
を形成している。本発明のよれば、半導体素子の樹脂に
より封止する部分を、図1に示すように半導体素子の回
路構成面を平面とした場合の外周部分より外側へはみ出
すことがないようにするため、モールド金型9上のキャ
ビティー10の構造において、キャビティー10と半導
体素子2の両者の側面の境界を、封止樹脂が入り込まな
い10μm以下程度の間隔になるようキャビティーの側
面部分を製作し、このキャビティーに半導体素子をはめ
込み樹脂成形することで、図1に示すようにTABテー
プと半導体素子の接続部並びに半導体素子の能動面だけ
を樹脂封止する事ができる。FIG. 1, FIG. 2, FIG.
This will be described with reference to FIGS. TC based on (means 1)
FIG. 1 shows a cross-sectional view of an example in which the present invention is implemented at P. As shown in FIG. 1, the inner lead 4 of the TAB tape and the semiconductor element 2 are joined via the bumps 3 by, for example, gang bonding to form TCP. Next, the semiconductor element and TA
Only the joint of the inner lead B and the active surface of the semiconductor element are resin-sealed by transfer molding.
In the transfer mold, as shown in FIG. 6, a cavity called a cavity 10 formed by injecting a resin is provided on a division surface of a mold die 9 which can be divided vertically or horizontally. The semiconductor element 2 connected to the TAB to be sealed is sandwiched, the mold is closed, a resin is injected into the cavity, and the resin is cured to form a package. According to the present invention, in order to prevent the portion of the semiconductor element to be sealed with the resin from protruding outside the outer peripheral portion when the circuit configuration surface of the semiconductor element is flat as shown in FIG. In the structure of the cavity 10 on the mold 9, the side surface of the cavity is manufactured so that the boundary between the side surfaces of both the cavity 10 and the semiconductor element 2 has an interval of about 10 μm or less where the sealing resin does not enter. By fitting the semiconductor element into the cavity and performing resin molding, only the connection between the TAB tape and the semiconductor element and the active surface of the semiconductor element can be resin-sealed as shown in FIG.
【0010】また、(手段2)による本発明の一実施例
を図2、図4及び図5を用いて説明する。図2は本発明
の実施例の断面図で、図4及び図5は図2に示す本発明
の実施例の製造方法の一例を示す図である。An embodiment of the present invention using (means 2) will be described with reference to FIGS. 2, 4 and 5. FIG. FIG. 2 is a sectional view of an embodiment of the present invention, and FIGS. 4 and 5 are views showing an example of a manufacturing method of the embodiment of the present invention shown in FIG.
【0011】図4に示すように、半導体素子1とTAB
テープのインナーリード4とのバンプ3を介して接合を
行いTCPにした後、半導体素子の回路構成面で露光等
のために開口部としたい部分に、例えば耐熱性のある透
明なシリコーン等の樹脂7を、半導体素子の回路構成面
を平面とした場合の、樹脂により封止しようとする断面
に於ける厚さと等しくなるように板状にして、例えば紫
外線硬化型の接着剤8で接着する。この後、手段1と同
じくトランスファーモールドにより樹脂封止する。図5
に示すような成形後のパッケージの接着材8に紫外線を
照射する事で接着材の粘着力を低下させ、板状の樹脂7
は剥離する。以上の方法で図2に示すようなパッケージ
が完成する。[0011] As shown in FIG.
After bonding to the inner leads 4 of the tape via the bumps 3 to form a TCP, a portion such as a heat-resistant resin such as a transparent silicone resin is formed on a portion of the circuit structure of the semiconductor element which is to be opened for exposure or the like. 7 is formed into a plate shape so as to have a thickness equal to a thickness of a section to be sealed with a resin when a circuit configuration surface of the semiconductor element is a flat surface, and is adhered by, for example, an ultraviolet curing adhesive 8. Thereafter, resin sealing is performed by transfer molding in the same manner as in the first means. FIG.
By irradiating the adhesive 8 of the package after molding with ultraviolet rays as shown in FIG.
Peels off. With the above method, a package as shown in FIG. 2 is completed.
【0012】[0012]
【発明の効果】本発明によれば、従来のTCPと比較し
て、封止樹脂2の占有する体積が、従来の例を示す図3
の封止樹脂2の体積に比べ20%程度まで抑えることが
でき、TCPの軽量化及び小型化を実現することが可能
となる。また、従来トランスファーモールドTCP化が
困難であったUVEPROMやCCD、光半導体素子等
の受光、発光を機能に持つ素子をTCP化する事がで
き、かつ、半導体素子と封止樹脂の線膨張率の違いによ
るパッケージの反りが発生しないという効果がある。ま
た、従来の製造工程と比較して、トランスファーモール
ド工程に於いて使用するモールド金型の形状が異なるだ
けで、本発明を実施する上での生産工程への影響が非常
に少ないという効果がある。According to the present invention, the volume occupied by the sealing resin 2 is smaller than that of the conventional TCP.
The volume of the sealing resin 2 can be suppressed to about 20%, and the weight and size of the TCP can be reduced. In addition, it is possible to make the elements having the function of receiving and emitting light, such as UVEPROM, CCD, optical semiconductor element, etc., which were difficult to transfer mold TCP in the past, into TCP. There is an effect that the package does not warp due to the difference. Also, as compared with the conventional manufacturing process, only the shape of the mold used in the transfer molding process is different, and there is an effect that the influence on the production process in implementing the present invention is very small. .
【図1】本発明の手段1に基づく一実施例の断面図。FIG. 1 is a sectional view of one embodiment based on the means 1 of the present invention.
【図2】本発明の手段2に基づく一実施例の断面図。FIG. 2 is a sectional view of an embodiment based on the means 2 of the present invention.
【図3】従来のTCPの断面図。FIG. 3 is a cross-sectional view of a conventional TCP.
【図4】本発明の手段2に基づく一実施例の形成過程を
示す断面図。FIG. 4 is a sectional view showing a forming process of an embodiment based on the means 2 of the present invention.
【図5】本発明の手段2に基づく一実施例の形成過程を
示す断面図。FIG. 5 is a sectional view showing a forming process of an embodiment based on the means 2 of the present invention.
【図6】本発明の手段1に基づく一実施例の形成過程を
示す断面図。FIG. 6 is a sectional view showing a forming process of an embodiment based on the means 1 of the present invention.
1 半導体素子 2 封止樹脂 3 バンプ 4 インナーリード 5 キャリアテープ 6 アウターリード 7 耐熱性のある樹脂 8 紫外線硬化型の接着剤 9 モールド金型 10 キャビティー DESCRIPTION OF SYMBOLS 1 Semiconductor element 2 Encapsulation resin 3 Bump 4 Inner lead 5 Carrier tape 6 Outer lead 7 Heat resistant resin 8 Ultraviolet curing type adhesive 9 Mold 10 Cavity
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7,DB名) H01L 21/56,23/28,21/60 ────────────────────────────────────────────────── ─── Continued on the front page (58) Field surveyed (Int.Cl. 7 , DB name) H01L 21 / 56,23 / 28,21 / 60
Claims (5)
記電極上のバンプを介して接続する工程と、 前記半導体素子の前記電極が形成された面において、非
樹脂形成領域とすべき個所に樹脂封止後に除去可能な部
材を配置する工程と、 前記除去可能な部材が配置された状態で前記半導体素子
の能動面のみをトランスファーモールドにより樹脂封止
する工程と、 前記樹脂封止する工程の後に前記除去可能な部材を取り
除く工程と、 を有することを特徴とする半導体装置の製造方法。A step of connecting an electrode of a semiconductor element and an inner lead via a bump on the electrode; and a step of forming a non-resin forming area on a surface of the semiconductor element on which the electrode is formed. After the step of disposing a removable member after sealing; the step of resin-sealing only the active surface of the semiconductor element by transfer molding in a state where the removable member is disposed; and Removing the removable member. A method for manufacturing a semiconductor device, comprising:
いて、 前記除去可能な部材を配置する工程では、前記光透過樹
脂を紫外線硬化型の接着部材で前記非樹脂形成領域とす
べき個所に貼り付けを行い、 前記取り除く工程では、前記接着部材に対して紫外線を
照射し、その後に前記光透過樹脂を取り除くことを特徴
とする請求項1記載の半導体装置の製造方法。2. The step of arranging the removable member using a light-transmitting resin as the removable member, wherein the light-transmitting resin is to be the non-resin forming region with an ultraviolet-curable adhesive member. 2. The method of manufacturing a semiconductor device according to claim 1, wherein in the removing step, the adhesive member is irradiated with ultraviolet light, and then the light transmitting resin is removed.
樹脂が用いられることを特徴とする請求項2記載の半導
体装置の製造方法。3. The method according to claim 2, wherein a heat-resistant resin is used for the removable member.
脂が用いられることを特徴とする請求項3記載の半導体
装置の製造方法。4. The method according to claim 3, wherein a silicon resin is used for the removable member.
型であって、 前記金型のキャビティが封止するべく半導体素子の側面
から10μm以下の間隙になるように前記キャビティ側面
が形成されたものからなることを特徴とする樹脂封止用
金型。5. A resin-sealing mold for sealing a semiconductor element, wherein a side surface of the cavity is formed such that a cavity of the mold has a gap of 10 μm or less from a side surface of the semiconductor element for sealing. A mold for resin encapsulation, comprising:
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP05192542A JP3141634B2 (en) | 1993-08-03 | 1993-08-03 | Semiconductor device manufacturing method and resin sealing mold |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP05192542A JP3141634B2 (en) | 1993-08-03 | 1993-08-03 | Semiconductor device manufacturing method and resin sealing mold |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0745655A JPH0745655A (en) | 1995-02-14 |
JP3141634B2 true JP3141634B2 (en) | 2001-03-05 |
Family
ID=16293015
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP05192542A Expired - Fee Related JP3141634B2 (en) | 1993-08-03 | 1993-08-03 | Semiconductor device manufacturing method and resin sealing mold |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP3141634B2 (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR0148733B1 (en) * | 1995-04-27 | 1998-08-01 | 문정환 | A package for solid state imaging device and fabrication method thereof |
US5973337A (en) * | 1997-08-25 | 1999-10-26 | Motorola, Inc. | Ball grid device with optically transmissive coating |
JP3194917B2 (en) | 1999-08-10 | 2001-08-06 | トーワ株式会社 | Resin sealing method |
KR100494666B1 (en) * | 2001-12-28 | 2005-06-13 | 동부아남반도체 주식회사 | connceting ccd image senser for csp semiconducter |
US9617469B2 (en) | 2011-01-06 | 2017-04-11 | Shin-Etsu Chemical Co., Ltd. | Phosphor particles, making method, and light-emitting diode |
US8865022B2 (en) | 2011-01-06 | 2014-10-21 | Shin-Etsu Chemical Co., Ltd. | Phosphor particles and making method |
-
1993
- 1993-08-03 JP JP05192542A patent/JP3141634B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH0745655A (en) | 1995-02-14 |
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