[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

JP3026303B2 - Semiconductor package wire bonding method and wire bonding apparatus - Google Patents

Semiconductor package wire bonding method and wire bonding apparatus

Info

Publication number
JP3026303B2
JP3026303B2 JP5158682A JP15868293A JP3026303B2 JP 3026303 B2 JP3026303 B2 JP 3026303B2 JP 5158682 A JP5158682 A JP 5158682A JP 15868293 A JP15868293 A JP 15868293A JP 3026303 B2 JP3026303 B2 JP 3026303B2
Authority
JP
Japan
Prior art keywords
bonding
wire
point
points
bonding point
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP5158682A
Other languages
Japanese (ja)
Other versions
JPH0722455A (en
Inventor
隆信 川内
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to JP5158682A priority Critical patent/JP3026303B2/en
Publication of JPH0722455A publication Critical patent/JPH0722455A/en
Application granted granted Critical
Publication of JP3026303B2 publication Critical patent/JP3026303B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01023—Vanadium [V]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01039—Yttrium [Y]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20756—Diameter ranges larger or equal to 60 microns less than 70 microns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20757—Diameter ranges larger or equal to 70 microns less than 80 microns

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【産業上の利用分野】本発明は、トランジスタ、ダイオ
ード等において、特にリードフレーム上に実装された半
導体ペレットとインナーリードとをアルミニウムワイヤ
によって電気的に接続する半導体パッケージのワイヤボ
ンディング方法及びそのワイヤボンディング装置に関す
るものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wire bonding method for a semiconductor package in which a semiconductor pellet mounted on a lead frame and an inner lead are electrically connected by an aluminum wire, particularly to a transistor, a diode, and the like. It concerns the device.

【０００２】[0002]

【従来の技術】一般に、この種の半導体パッケージとし
て代表的に挙げられるトランジスタは、例えば図６に示
すように、トランジスタ素子ペレット１と、リードフレ
ーム２と、このリードフレーム２の両側に位置する一対
のインナーリード３ａ、３ｂとを備えている。2. Description of the Related Art In general, a transistor typically typified as a semiconductor package of this type includes a transistor element pellet 1, a lead frame 2, and a pair of transistors located on both sides of the lead frame 2, as shown in FIG. Inner leads 3a, 3b.

【０００３】そして、前記ペレット１がリードフレーム
２のアイランド２ａにダイボンディングされるととも
に、該ペレット１の上面左右に設けられた第１、第３ボ
ンディング点ａ１、ｂ１と、インナーリード３ａ、３ｂ
の先端部上面に設定された第２、第４ボンディング点ａ
２、ｂ２との間がそれぞれワイヤボンディングされるこ
とにより、ペレット１の裏側に形成されたコレクタ電極
がアイランド２ａに電気的に接続されるとともに、第
１、第３ボンディング点ａ１、ｂ１に設けられたベース
電極とエミッタ電極とがそれぞれボンディングワイヤ４
を介してインナーリード３ａ、３ｂに接続されている。Then, the pellet 1 is die-bonded to the island 2a of the lead frame 2, and first and third bonding points a1, b1 provided on the left and right of the upper surface of the pellet 1, and inner leads 3a, 3b.
And fourth bonding points a set on the upper surface of the tip of
2 and b2 are respectively wire-bonded, so that the collector electrode formed on the back side of the pellet 1 is electrically connected to the island 2a and provided at the first and third bonding points a1 and b1. The base electrode and the emitter electrode are connected to bonding wires 4 respectively.
Are connected to the inner leads 3a and 3b via the.

【０００４】このような構成のトランジスタでは、ペレ
ット１側の第１ボンディング点ａ１に対しインナーリー
ド３ａ側の第２ボンディング点ａ２が、リードフレーム
２の中心線ｃがＹ軸に沿うように設定したＸ−Ｙ平面座
標系において、Ｘ，Ｙ両方向に偏位している。換言すれ
ばリードフレーム２の中心線ｃから第１ボンディング点
ａ１までの距離Ｌ１よりも、該中心線ｃから第２ボンデ
ィング点ａ２までの距離Ｌ２の方が大きい、つまりＬ１
＜Ｌ２となっている。これは、中心線ｃの左側に位置す
る第３、第４ボンディング点ｂ１、ｂ２についても同様
である。 In the transistor having such a structure, the second bonding point a2 on the inner lead 3a side is set so that the center line c of the lead frame 2 is along the Y axis with respect to the first bonding point a1 on the pellet 1 side. In the XY plane coordinate system, it is deviated in both X and Y directions. In other words, the distance L2 from the center line c to the second bonding point a2 is larger than the distance L1 from the center line c of the lead frame 2 to the first bonding point a1, that is, L1
<L2. This is located on the left side of the center line c.
For the third and fourth bonding points b1 and b2
It is.

【０００５】図７及び図８に上記構成を備えたトランジ
スタの組立工程の一例を示す。図７に示すように、上記
トランジスタはリードフレーム供給工程(Ｉ)→プリフォ
ームマウント工程(II)→撹拌工程(III) →ダイボンディ
ング工程(IV)→第１ワイヤボンディング工程(Ｖ)→第２
ワイヤボンディング工程(VI)→ フレーム格納工程(VII)
の順序で組み立てられる。FIGS. 7 and 8 show an example of an assembling process of a transistor having the above configuration. As shown in FIG. 7, the above-mentioned transistor is connected to the lead frame supply step (I) → preform mounting step (II) → stirring step (III) → die bonding step (IV) → first wire bonding step (V) → second step.
Wire bonding process (VI) → Frame storage process (VII)
Assembled in order.

【０００６】即ち、上記プリフォームマウント工程〜ワ
イヤボンディング工程に使用される自動機械は図８に示
すように、リードフレーム２が供給される組立ライン上
に上記した順序で配設されており、供給されたリードフ
レーム２に対し、プリフォームマウント工程(II)では、
半田プリフォームをリードフレーム２のアイランド２ａ
上にマウントし、撹拌工程(III) で該半田プリフォーム
を溶融撹拌する。That is, as shown in FIG. 8, the automatic machines used in the preform mounting step to the wire bonding step are arranged on the assembly line to which the lead frame 2 is supplied in the above-described order. In the preform mounting step (II) for the lead frame 2 thus completed,
Connect the solder preform to the island 2a of the lead frame 2.
The solder preform is melted and stirred in a stirring step (III).

【０００７】ダイボンディング工程(IV)では、溶融撹拌
された半田によってペレット１をリードフレーム２のア
イランド２ａ上にダイボンディングすることにより、コ
レクタ電極をリードフレーム２に電気的に接続する。In the die bonding step (IV), the collector electrode is electrically connected to the lead frame 2 by die-bonding the pellet 1 to the island 2a of the lead frame 2 with the melt-stirred solder.

【０００８】次いで、第１ワイヤボンディング工程(Ｖ)
で、ペレット１の第１ボンディング点ａ１とインナーリ
ード３ａの第２ボンディング点ａ２とにボンディングワ
イヤ４をワイヤボンディングすることにより、ベース電
極をインナーリード３ａに接続し、さらに第２ワイヤボ
ンディング工程(VI)で、ペレット１の第３ボンディング
点ｂ１とインナーリード３ｂの第４ボンディング点ｂ２
とをワイヤボンディングすることにより、エミッタ電極
をインナーリード３ｂに接続する。Next, a first wire bonding step (V)
Then, by bonding the bonding wire 4 to the first bonding point a1 of the pellet 1 and the second bonding point a2 of the inner lead 3a, the base electrode is connected to the inner lead 3a, and the second wire bonding step (VI ), The third bonding point b1 of the pellet 1 and the fourth bonding point b2 of the inner lead 3b .
Is connected to the inner lead 3b by wire bonding.

【０００９】このようにしてペレット１の各電極が対応
するリード部に接続された後、フレーム格納した後に全
体をモールドするとともに、リードフレーム２が個々の
トランジスタ毎に分断され、さらにモールド部から突出
するアウターリード部が屈曲成形されて、ディスクリー
トな半導体パッケージとしてのトランジスタが作製され
る。After each electrode of the pellet 1 is connected to the corresponding lead portion in this way, the whole is molded after being stored in the frame, and the lead frame 2 is divided into individual transistors and further protrudes from the molded portion. The outer lead portion to be formed is bent and formed, and a transistor as a discrete semiconductor package is manufactured.

【００１０】このような組立工程において前記第１、第
２ワイヤボンディング工程(Ｖ)(VI)では通常、ウェッジ
ボンディング法によってワイヤボンディングが施され
る。このワイヤボンディング工程ではそれぞれ、半導体
パッケージのパターンを認識してボンディング点の位置
検出を行うボンディング点検出手段と、第１、第２ボン
ディング点ａ１、ａ２及び第３、第４ボンディング点ｂ
１、ｂ２にワイヤボンディングを行うツールと、前記ボ
ンディング点検出手段及びツールを制御するマイクロコ
ンピュータとによりワイヤボンディングが施される。 In such an assembling process, wire bonding is usually performed by a wedge bonding method in the first and second wire bonding processes (V) and (VI). Each In this wire bonding process, the bonding point detection means for recognizing the pattern of a semiconductor package detecting the position of the bonding point, first, second bonding point a1, a2 and the third, fourth bonding point b
Wire bonding is performed by a tool for performing wire bonding on 1 and b2 , and a microcomputer that controls the bonding point detecting means and the tool .

【００１１】図９は従来のウェッジボンディング法によ
る第１ワイヤボンディング工程(Ｖ)におけるマイクロコ
ンピュータの制御動作の一例を示し、図１０はその工程
において使用されるツールの動作を示している。なお、
図９、図１０において、対応するツール動作過程には同
一の符号を付している。FIG. 9 shows an example of a control operation of a microcomputer in a first wire bonding step (V) by a conventional wedge bonding method, and FIG. 10 shows an operation of a tool used in the step. In addition,
In FIGS. 9 and 10, corresponding tool operation steps are denoted by the same reference numerals.

【００１２】これらの図に示すように従来では、ステッ
プ(1) で、ペレット１がダイボンディングされた状態
で、ペレット１のパターンをボンディング点検出手段に
認識させることにより、第１ボンディング点ａ１の位置
検出を行う。次いで、ステップ(2)では、この検出デー
タに基づいてボンディング用のツールを動作させ、第１
ボンディング点ａ１のワイヤボンディングを行う。As shown in these figures, conventionally, in step (1), in a state where the pellet 1 is die-bonded, the pattern of the pellet 1 is recognized by the bonding point detecting means to thereby determine the first bonding point a1. Perform position detection. Next, in step (2), the bonding tool is operated based on the detected data, and the first
Wire bonding at the bonding point a1 is performed.

【００１３】第１ボンディング点ａ１のワイヤボンディ
ングが完了すると、ステップ(3) では、図１０に示すよ
うに、ツールを真上に所定距離垂直上昇させ、ステップ
(4)でその位置ｐ１から一旦、リードフレーム中心線ｃ
と平行に、つまりＹ軸方向に所定距離直進移動させる。
これによりツールは位置ｐ２に至る。When the wire bonding at the first bonding point a1 is completed, in a step (3), as shown in FIG.
In (4), once from the position p1, the lead frame center line c
In parallel, ie, in the Y-axis direction.
This causes the tool to reach position p2.

【００１４】ステップ(5) でこの位置ｐ２からはツール
の方向を９０゜外側へ転換して、Ｘ軸方向にＬ２とＬ１
の差分だけ移動させ、位置ｐ３に至らせる。さらにステ
ップ(6) でツールを再びＹ軸に沿って所定距離移動させ
る。これによりツールは第２ボンディング点ａ２の真上
位置ｐ４に至る。そして、ステップ(7) で位置ｐ４から
ツールを真下に垂直下降させ、ステップ(8) で第２ボン
ディング点ａ２でワイヤボンディングを施す。In step (5), the direction of the tool is turned 90 ° outward from the position p2, and L2 and L1 are shifted in the X-axis direction.
To the position p3. Further, in step (6), the tool is moved again by a predetermined distance along the Y axis. Thereby, the tool reaches the position p4 just above the second bonding point a2. Then, in step (7), the tool is vertically lowered from directly below the position p4, and in step (8), wire bonding is performed at the second bonding point a2.

【００１５】[0015]

【発明が解決しようとする課題】しかしながら、上記の
ような従来方法によると、ペレット側の第１ボンディン
グ点ａ１でのワイヤボンディング後、ツールがインナー
リード側の第２ボンディング点ａ２に至るまでの間、該
ツールは途中で平面視クランク状に方向を転換するた
め、第１ボンディング点ａ１でのボンディングネック、
つまりワイヤの立上がり部にＸ方向乃至斜め方向の引っ
張り力が作用する。However, according to the conventional method as described above, after the wire bonding at the first bonding point a1 on the pellet side, it takes a long time before the tool reaches the second bonding point a2 on the inner lead side. Since the tool changes its direction in a crank shape in a plan view on the way, the bonding neck at the first bonding point a1
That is, the pulling force in the X direction or the oblique direction acts on the rising portion of the wire.

【００１６】このため、ワイヤ４に無理な力が作用する
ため、信頼性が低下するという問題点があった。特に、
ボンディングワイヤ４として安価で実用性に富むアルミ
ニウム細線の場合、上記した引っ張り力によって断線を
招く虞が大きいため、使用できない現状にある。For this reason, since an excessive force acts on the wire 4, there is a problem that the reliability is reduced. In particular,
In the case of an inexpensive and practical aluminum thin wire as the bonding wire 4, the aluminum wire cannot be used because the above-described tensile force is likely to cause disconnection.

【００１７】また、ワイヤ４は第１、第２ボンディング
点ａ１、ａ２の途中で大きく屈曲した形状で配線される
ことになるため、ボンディング工程に時間を要し、単位
時間当たりの生産量が大きく制約されるという問題点が
あった。Further, since the wire 4 is wired in a greatly bent shape in the middle of the first and second bonding points a1 and a2, a long time is required for the bonding step, and the production amount per unit time is large. There was a problem of being restricted.

【００１８】なお、第２ワイヤボンディング工程は第１
ワイヤボンディング工程と実質的には異なるところがな
いため、第１ワイヤボンディング工程に関して述べた上
記問題点は第２ワイヤボンディング工程においても同様
に生起する。The second wire bonding step is performed in the first wire bonding step.
Since there is substantially no difference from the wire bonding step, the above-described problem described with respect to the first wire bonding step similarly occurs in the second wire bonding step.

【００１９】本発明は、上記のような問題点を解決する
ためになされたもので、ウェッジボンディングを行うに
際し、ボンディングワイヤとしてにアルミニウムワイヤ
を使用することができるように、該アルミニウムワイヤ
を直線的に配線した状態でボンディングすることによ
り、該ワイヤにストレスを与えることなく、信頼性、量
産性に富む半導体パッケージのワイヤボンディング方法
及びそのワイヤボンディング装置を提供することを目的
とするものである。SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and when performing wedge bonding, the aluminum wire is straightened so that the aluminum wire can be used as the bonding wire. It is an object of the present invention to provide a wire bonding method and a wire bonding apparatus for a semiconductor package which are highly reliable and mass-produced without applying stress to the wires by bonding the wires.

【００２０】[0020]

【課題を解決するための手段】本発明は、半導体素子ペ
レットと、この半導体素子ペレットが実装されるアイラ
ンドを有するリードフレームと、第１、第２のインナー
リードとを備え、前記半導体素子ペレット上に設定され
た第１、第３ボンディング点に対し、前記第１、第２イ
ンナーリード上に設定された第２、第４ボンディング点
が、前記リードフレームの中心線がＹ軸に沿うように設
定したＸ−Ｙ平面座標系において、Ｘ，Ｙ両方向に偏位
し、前記第１、第２ボンディング点が前記Ｙ軸の右側
に、一方、前記第３、第４ボンディング点が左側に位置
する半導体パッケージを一方向に移送するとともに、そ
の一方向に沿って並置された第１、第２のワイヤボンデ
ィング手段によって前記第１、第２ボンディング点間と
前記第３、第４ボンディング点間の電気的接続をアルミ
ニウムワイヤを用いて行うことを前提としている。Means for Solving the Problems The present invention, Ira to a semiconductor device pellet, the semiconductor device pellet is mounted
Comprising a lead frame having a command, and a first, second inner leads, the semiconductor device first set on the pellets, to third bonding point, the first, is set on the second inner leads The second and fourth bonding points are displaced in both X and Y directions in an XY plane coordinate system in which the center line of the lead frame is set along the Y axis.
And the first and second bonding points are on the right side of the Y axis.
On the other hand, the third and fourth bonding points are located on the left side.
With transferring the semiconductor package in one direction to, its
First and second wire bonds juxtaposed along one direction
Wherein the Ingu means first, and between the second bonding point
It is assumed that the electrical connection between the third and fourth bonding points is made using aluminum wires.

【００２１】そして、そして、上記目的を達成するため
に本発明のウェッジボンディング方法では、前記第１ワ
イヤボンディング手段を用いて、前記アルミニウムワイ
ヤを前記第１，第２ボンディング点間を直線的に結ぶ方
向で前記第１ボンディング点にボンディングを施した
後、該アルミニウムワイヤをそのままの方向で前記第２
ボンディング点に導いてボンディングを施すとともに、
前記第２ワイヤボンディング手段を用いて、前記アル
ミニウムワイヤを前記第３ボンディング点に前記第３，
第４ボンディング点間を直線的に結ぶ方向でボンディン
グを施した後、該アルミニウムワイヤをそのままの方向
で前記第４ボンディング点に導いてボンディングを施す
ようにしている。According to the wedge bonding method of the present invention, the aluminum wire is linearly connected between the first and second bonding points using the first wire bonding means. After bonding the first bonding point in the first direction, the aluminum wire is held in the second direction in the second direction.
Leading to the bonding point and performing bonding,
Using the second wire bonding means, place the aluminum wire at the third bonding point with the third and third wires.
After bonding is performed in a direction connecting the fourth bonding points linearly, the aluminum wire is guided to the fourth bonding point in the same direction to perform bonding.

【００２２】また、本発明のウェッジワイヤボンディン
グ装置では、前記第１ワイヤボンディング手段は、前記
第１ボンディング点の位置検出を行うボンディング点検
出手段と、前記アルミニウムワイヤを前記第１，第２ボ
ンディング点間を直線的に結ぶ方向で前記第１ボンディ
ング点にボンディングを施した後、該アルミニウムワイ
ヤをそのままの方向で前記第２ボンディング点に導いて
ボンディングするツールと、前記ボンディング点検出手
段による第１ボンディング点の位置検出データに基づ
き、前記ツールを前記第１ボンディング点の真上で対向
する位置から第２ボンディング点の真上で対向する位置
まで直進移動させるように動作制御するツール制御手段
とを具備し、前記第２ワイヤボンディング手段は、前記
第３ボンディング点の位置検出を行うボンディング点検
出手段と、前記アルミニウムワイヤを前記第３，第４ボ
ンディング点間を直線的に結ぶ方向で前記第３ボンディ
ング点にボンディングを施した後、該アルミニウムワイ
ヤをそのままの方向で前記第４ボンディング点に導いて
にアルミニウムワイヤをボンディングするツールと、前
記ボンディング点検出手段による第３ボンディング点の
位置検出データに基づき、前記ツールを前記第３ボンデ
ィング点の真上で対向する位置から第４ボンディング点
の真上で対向する位置まで直進移動させるように動作制
御するツール制御手段とを具備するように構成してい
る。Further, in the wedge wire bonding apparatus of the present invention, the first wire bonding means includes a bonding point detecting means for detecting a position of the first bonding point, and a bonding point detecting means for connecting the aluminum wire to the first and second bonding points. A tool for bonding after bonding to the first bonding point in a direction connecting the two linearly, and guiding the aluminum wire to the second bonding point in the same direction, and a first bonding by the bonding point detecting means; Tool control means for operationally controlling the tool to move straight from a position directly above the first bonding point to a position directly above and opposed to the second bonding point based on the position detection data of the point. And the second wire bonding means is provided at the third bonding point. Bonding point detecting means for performing position detection; and bonding the aluminum wire to the third bonding point in a direction connecting the third and fourth bonding points linearly, and then holding the aluminum wire in the same direction. A tool for guiding the aluminum wire to the fourth bonding point and, based on position detection data of the third bonding point by the bonding point detection means, moving the tool from a position directly above the third bonding point; Tool control means for controlling operation so as to move straight ahead to a position directly above the fourth bonding point.

【００２３】[0023]

【作用】上記方法によると、第１ワイヤボンディング手
段により、アルミニウムワイヤを第１，第２ボンディン
グ点間を直線的に結ぶ方向で第１ボンディング点にボン
ディングを施した後、該アルミニウムワイヤをそのまま
の方向で第２ボンディング点に導いてボンディングを施
するようにしている。また、第２ワイヤボンディング手
段により、アルミニウムワイヤを第３ボンディング点に
第３，第４ボンディング点間を直線的に結ぶ方向でボン
ディングを施した後、該アルミニウムワイヤをそのまま
の方向で第４ボンディング点に導いてボンディングを施
すようにしている。故に、ツールの移動量を必要最小限
まで短縮することができ、これによって単位時間当たり
の生産量が大きく向上するAccording to the above method, after the first wire bonding means bonds the aluminum wire to the first bonding point in a direction connecting the first and second bonding points linearly, the aluminum wire is left as it is. The direction is guided to the second bonding point to perform bonding. Further, after the aluminum wire is bonded to the third bonding point in a direction linearly connecting the third and fourth bonding points by the second wire bonding means, the aluminum wire is bonded to the fourth bonding point in the same direction. To perform bonding. Therefore, the amount of movement of the tool can be reduced to a necessary minimum, which greatly increases the output per unit time.

【００２４】また、ワイヤが直線状に配線されることに
より、ワイヤに無理な力が働くことを極力防止できるた
め、アルミニウム細線からなるワイヤであっても、断線
等の危険性もなく、信頼性の高い電気的接続を得ること
ができる。Further, since the wires are laid in a straight line, it is possible to prevent excessive force from acting on the wires. Therefore, even if the wires are made of thin aluminum wires, there is no danger of disconnection and the like, and the reliability is improved. High electrical connection can be obtained.

【００２５】[0025]

【実施例】以下、本発明の実施例を図面を参照しながら
説明する。なお、本実施例において、前掲の従来例と構
成及び作用が共通する部分には共通の符号を付すことと
する。図１及び図２は本実施例が対象とするトランジス
タ素子ペレットとインナーリード間のワイヤボンディン
グの態様を示している。Embodiments of the present invention will be described below with reference to the drawings. In the present embodiment, portions having the same configuration and operation as those of the above-described conventional example are denoted by the same reference numerals. 1 and 2 show a mode of wire bonding between a transistor element pellet and an inner lead, which is an object of this embodiment.

【００２６】これらの図において、本実施例が対象とす
る半導体パッケージとしてのトランジスタは、トランジ
スタ素子ペレット１と、リードフレーム２と、このリー
ドフレーム２の両側に位置する一対のインナーリード３
ａ、３ｂとを備えており、リードフレーム２の中央に設
けられたアイランド２ａ上にペレット１がダイボンディ
ングにより装着されている。ペレット１の裏面はコレク
タ電極面となっており、該ダイボンディングが施される
ことによって、コレクタ電極がアイランド２ａに電気的
に接続される。なお、２ｂはネジ止め用孔である。In these figures, a transistor as a semiconductor package to which the present embodiment is applied includes a transistor element pellet 1, a lead frame 2, and a pair of inner leads 3 located on both sides of the lead frame 2.
a, 3b, and the pellet 1 is mounted on an island 2a provided at the center of the lead frame 2 by die bonding. The back surface of the pellet 1 is a collector electrode surface, and the collector electrode is electrically connected to the island 2a by performing the die bonding. 2b is a screw hole.

【００２７】前記ペレット１の表面にはエミッタ電極及
びベース電極に対応して左右一対の第１、第３ボンディ
ング点ａ１、ｂ１がパッドの形態で設けられている。一
方、左右のインナーリード３ａ、３ｂはエミッタ側端子
及びベース側端子となるもので、それぞれ先端部上面に
第２、第４ボンディング点ａ２、ｂ２が設定されてい
る。On the surface of the pellet 1, a pair of left and right first and third bonding points a1 and b1 are provided in the form of pads corresponding to the emitter electrode and the base electrode. On the other hand, the left and right inner leads 3a and 3b serve as emitter-side terminals and base-side terminals, respectively, and second and fourth bonding points a2 and b2 are set on the upper surfaces of the distal ends.

【００２８】そして、これら第１、第３ボンディング点
ａ１、ａ２と第２、第４ボンディング点ｂ１、ｂ２とが
それぞれワイヤボンディングされることにより、第１、
第３ボンディング点ａ１、ｂ１に設けられたベース電極
とエミッタ電極とがそれぞれボンディングワイヤ４を介
してインナーリード３ａ、３ｂに接続される。 The first and third bonding points
a1, a2 and the second and fourth bonding points b1, b2 are respectively wire-bonded, so that the first ,
The base electrode and the emitter electrode provided at the third bonding points a1 and b1 are connected to the inner leads 3a and 3b via the bonding wires 4, respectively.

【００２９】いま、リードフレーム２の中心線ｃがＹ軸
に沿うＸ−Ｙ平面座標系を設定した場合、ペレット１側
の第１ボンディング点ａ１に対しインナーリード３ａ側
の第２ボンディング点ａ２はＸ方向には長さＬｘ、Ｙ方
向には長さＬｙだけ偏位している。また、図２に示すよ
うに、ペレット１側の第１ボンディング点ａ１はインナ
ーリード３ａ側の第２ボンディング点ａ２よりも落差Ｌ
ｚだけ低い位置に配置されている。If the center line c of the lead frame 2 sets an XY plane coordinate system along the Y axis, the second bonding point a2 on the inner lead 3a side is different from the first bonding point a1 on the pellet 1 side. It is displaced by a length Lx in the X direction and by a length Ly in the Y direction. As shown in FIG. 2, the first bonding point a1 on the pellet 1 side is lower than the second bonding point a2 on the inner lead 3a side by a head L.
It is arranged at a position lower by z.

【００３０】このような基本構成を備えたトランジスタ
において、本実施例方法ではボンディングワイヤ４とし
てアルミニウム細線（以下、Al線と呼ぶ）を使用すると
ともに、第１、第２ボンディング点ａ１、ａ２間を既述
したウェッジボンディング法によって電気的に接続する
ようにしている。In the transistor having such a basic configuration, in the method of the present embodiment, an aluminum thin wire (hereinafter referred to as an Al wire) is used as the bonding wire 4 and the first and second bonding points a1 and a2 are connected. Electrical connection is made by the wedge bonding method described above.

【００３１】図３は本実施例方法によるワイヤボンディ
ング工程を示している。即ち、本実施例方法では、Al線
４により第１ボンディング点ａ１にウェッジボンディン
グを施した後、Al線４を第１、第２ボンディング点ａ
１、ａ２間を結ぶ直線状経路に沿って第２ボンディング
点ａ２に導き、第２ボンディング点ａ２にウェッジボン
ディングを施すようにしている。FIG. 3 shows a wire bonding step according to the present embodiment method. That is, in the method of the present embodiment, after performing wedge bonding on the first bonding point a1 with the Al wire 4, the Al wire 4 is connected to the first and second bonding points a1.
The first bonding point a2 is led to a second bonding point a2 along a linear path connecting between the first bonding point a and the second bonding point a2.

【００３２】図４は本実施例方法で好適に使用されるワ
イヤボンディング装置を模式的に示している。この図に
おいて、５はボンディング点検出手段、６はツール、７
はツール制御手段である。ボンディング点検出手段５は
ペレット１がダイボンディングされた状態で、該ペレッ
ト１のパターンを認識し、そのデータをツール制御手段
７へ出力するもので、これによって第１ボンディング点
ａ１の位置検出が行われる。FIG. 4 schematically shows a wire bonding apparatus suitably used in the method of this embodiment. In this figure, 5 is a bonding point detecting means, 6 is a tool, 7
Is a tool control means. The bonding point detecting means 5 recognizes the pattern of the pellet 1 in a state where the pellet 1 is die-bonded, and outputs the data to the tool control means 7, whereby the position of the first bonding point a1 is detected. Will be

【００３３】ツール６はツール制御手段７の指令に基づ
いて移動動作を行い、第１、第２ボンディング点ａ１、
ａ２にAl線をボンディングするもので、上下及び水平方
向に、移動可能に構成されている。さらに、ツール制御
手段７はマイクロコンピュータにより構成されていて、
ボンディング点検出手段５による第１ボンディング点ａ
１の位置検出データに基づき、ツール６を第１ボンディ
ング点ａ１の真上で対向する位置から第２ボンディング
点ａ２の真上で対向する位置まで直進移動させるように
動作制御するものである。The tool 6 performs a moving operation based on a command from the tool control means 7, and the first and second bonding points a1,
A wire is bonded to a2, and is configured to be movable in the vertical and horizontal directions. Further, the tool control means 7 is constituted by a microcomputer,
First bonding point a by bonding point detecting means 5
Based on the position detection data 1, the operation of the tool 6 is controlled so as to move straight from a position directly above the first bonding point a1 to a position directly above the second bonding point a2.

【００３４】図５はツール制御手段７によって制御され
るツール６の動作を示している。なお、図３及び図５に
おいて、対応するステップには同一の符号を付してい
る。図３〜図５において、対応するツール動作過程には
同一の符号を付している。FIG. 5 shows the operation of the tool 6 controlled by the tool control means 7. In FIGS. 3 and 5, corresponding steps are denoted by the same reference numerals. 3 to 5, corresponding tool operation steps are denoted by the same reference numerals.

【００３５】次に、図３〜図５を参照しながら、第１、
第２ボンディング点ａ１、ａ２へのワイヤボンディング
工程を説明すると、ステップ(11)で、ペレット１がダイ
ボンディングされた状態で、ペレット１のパターンをボ
ンディング点検出手段５に認識させることにより、第１
ボンディング点ａ１の位置検出を行う。次いでステップ
(12)では、この検出データに基づいてツール６を動作さ
せ、第１ボンディング点ａ１のウェッジボンディングを
行う。Next, referring to FIG. 3 to FIG.
The wire bonding process to the second bonding points a1 and a2 will be described. In step (11), the pattern of the pellet 1 is recognized by the bonding point detecting means 5 in a state where the pellet 1 is die-bonded, thereby the first bonding is performed.
The position of the bonding point a1 is detected. Then step
In (12), the tool 6 is operated based on the detected data to perform wedge bonding at the first bonding point a1.

【００３６】第１ボンディング点ａ１のウェッジボンデ
ィングが完了すると、ステップ(13)では図５に示すよう
に、ツール６を真上に所定距離垂直上昇させる。ステッ
プ(14)では、その位置Ｐ１からリードフレーム中心線ｃ
に対して一定角度θだけ傾斜した直線状経路に沿って、
第２ボンディング点ａ２の真上位置Ｐ２に至るまで所定
距離直進移動させる。ステップ(15)では、この位置Ｐ２
からツール６を真下に垂直下降させ、ステップ(16)で第
２ボンディング点ａ２でウェッジボンディングを施す。When the wedge bonding at the first bonding point a1 is completed, in a step (13), as shown in FIG. 5, the tool 6 is raised vertically right above by a predetermined distance. In step (14), the lead frame center line c
Along a straight path inclined by a fixed angle θ with respect to
It is moved straight forward by a predetermined distance until it reaches the position P2 just above the second bonding point a2. In step (15), the position P2
The tool 6 is vertically lowered from immediately below, and wedge bonding is performed at the second bonding point a2 in step (16).

【００３７】このように本実施例では、ツール６は第
１、第２ボンディング点ａ１、ａ２間を結び、且つ、リ
ードフレーム２の中心線ｃに対して一定角度θだけ傾斜
した直線状経路に沿って第２ボンディング点ａ２へ導く
ようにしているので、ツール６の移動量が短縮され、ま
た、ワイヤ４に無理な引っ張り力が作用しない。As described above, in the present embodiment, the tool 6 connects the first and second bonding points a1 and a2 and forms a straight path inclined at a fixed angle θ with respect to the center line c of the lead frame 2. Since the tool 6 is guided along the second bonding point a2, the amount of movement of the tool 6 is reduced, and no excessive pulling force acts on the wire 4.

【００３８】また、第２ワイヤボンディング工程におけ
る第３、第４ボンディング点ｂ１、ｂ２に対するワイヤ
ボンディングも、上記した第１ワイヤボンディング工程
と同様の装置及びプロセスによって行うことができる。The wire bonding to the third and fourth bonding points b1 and b2 in the second wire bonding step can be performed by the same apparatus and process as in the above-described first wire bonding step.

【００３９】なお、本発明は上記実施例で示したような
トランジスタの他、ダイオード等、ディスクリートな半
導体パッケージのいずれに適用しても同様の作用、効果
が得られるものである。It should be noted that the present invention can be applied to any discrete semiconductor package such as a diode or the like in addition to the transistor as shown in the above embodiment, and the same operation and effect can be obtained.

【００４０】[0040]

【発明の効果】以上説明したように本発明によるとき
は、半導体素子ペレット上に設定された第１、第３ボン
ディング点にワイヤボンディングを施した後、ワイヤを
インナーリード上に設定された第２、第４ボンディング
点へ導くに際し、第１ワイヤボンディング手段によりア
ルミニウムワイヤを第１，第２ボンディング点間を直線
的に結ぶ方向で第１ボンディング点にボンディングを施
した後、該アルミニウムワイヤをそのままの方向で前記
第２ボンディング点に導いてにボンディングを施すとと
もに、第２ワイヤボンディング手段によりアルミニウム
ワイヤを第３，第４ボンディング点間を直線的に結ぶ方
向で第３ボンディング点にボンディングを施した後、該
アルミニウムワイヤをそのままの方向で第４ボンディン
グ点に導いてワイヤが直線状に配線されるようにしたの
で、第１、第３ボンディング点においてワイヤに無理な
引っ張り力が作用しない。As described above, according to the present invention, after the first and third bonding points set on the semiconductor element pellet are wire-bonded, the wire is set on the second lead set on the inner lead. When the aluminum wire is guided to the fourth bonding point by the first wire bonding means, the aluminum wire is bonded to the first bonding point in a direction that linearly connects the first and second bonding points. After the aluminum wire is bonded to the third bonding point in a direction that linearly connects the third and fourth bonding points by the second wire bonding means, the aluminum wire is bonded to the third bonding point by the second wire bonding means. Lead the aluminum wire to the fourth bonding point in the same direction Since to be wired in a straight line, first, excessive tensile force to the wire in the third bonding point does not act.

【００４１】従って、ワイヤにダメージを与えないた
め、ワイヤ強度の安定を図ることができ、生産性の向上
に寄与するだけでなく、より重要な点として、従来不可
能とされていた線径70μm 以下のアルミニウム細線も使
用可能になるという優れた効果を発揮するものとなっ
た。Therefore, since the wire is not damaged, the strength of the wire can be stabilized, which not only contributes to the improvement of the productivity, but also more importantly, the wire diameter of 70 μm which has been considered impossible. The following aluminum thin wires also exhibited an excellent effect of being usable.

【図面の簡単な説明】[Brief description of the drawings]

【図１】 本発明の実施例におけるトランジスタ素子ペ
レットとインナーリード間のワイヤボンディングの態様
を示す平面図。FIG. 1 is a plan view showing a mode of wire bonding between a transistor element pellet and an inner lead according to an embodiment of the present invention.

【図２】 その側面図。FIG. 2 is a side view thereof.

【図３】 本実施例方法によるワイヤボンディング工程
を示すフローチャート。FIG. 3 is a flowchart showing a wire bonding step according to the embodiment method.

【図４】 本実施例方法で好適に使用されるワイヤボン
ディング装置の構成を模式的に示すブロック図。FIG. 4 is a block diagram schematically showing a configuration of a wire bonding apparatus suitably used in the method of the embodiment.

【図５】 そのツールの動作を示す動線図。FIG. 5 is a flow chart showing the operation of the tool.

【図６】 従来例におけるトランジスタ素子ペレットと
インナーリード間のワイヤボンディングの態様を示す平
面図。FIG. 6 is a plan view showing a mode of wire bonding between a transistor element pellet and inner leads in a conventional example.

【図７】 一般的な半導体パッケージの組立工程を示す
ブロック図。FIG. 7 is a block diagram showing a general semiconductor package assembling process.

【図８】 その組立ラインを模式的に示す平面図。FIG. 8 is a plan view schematically showing the assembly line.

【図９】 従来方法によるワイヤボンディング工程を示
すフローチャート。FIG. 9 is a flowchart showing a wire bonding step according to a conventional method.

【図１０】 そのツールの動作を示す動線図。FIG. 10 is a flow chart showing the operation of the tool.

【符号の説明】 １ トランジスタ素子ペレット ２ リードフレーム ３ａ インナーリード ３ｂ インナーリード ４ ワイヤ ５ ボンディング点検出手段 ６ ツール ７ ツール制御手段 ａ１ 第１ボンディング点 ａ２ 第２ボンディング点 ｂ１ 第１ボンディング点 ｂ２ 第２ボンディング点 ｃ リードフレームの中心線 θ 傾斜角度[Description of Signs] 1 Transistor element pellet 2 Lead frame 3a Inner lead 3b Inner lead 4 Wire 5 Bonding point detecting means 6 Tool 7 Tool controlling means a1 First bonding point a2 Second bonding point b1 First bonding point b2 Second bonding Point c Lead frame center line θ Tilt angle

Claims (2)

(57)【特許請求の範囲】(57) [Claims] 【請求項１】 半導体ペレットと、この半導体ペレット
が実装されるアイランドを有するリードフレームと、第
１，第２のインナーリードとを備え、前記半導体素子ペ
レット上に設定された第１，第３ボンディング点に対
し、前記第１，第２インナーリード上に設定された第
２，第４ボンディング点が、前記リードフレームの中心
線がＹ軸に沿うように設定したＸ−Ｙ平面座標系におい
て、Ｘ、Ｙ両方向に偏位し、前記第１，第２ボンディン
グ点が前記Ｙ軸の右側に、一方、前記第３，第４ボンデ
ィング点が左側に位置する半導体パッケージを一方向に
移送するとともに、その一方向に沿って並置された第
１，第２のワイヤボンディング手段によってアルミニウ
ムワイヤを用いて前記第１，第２ボンディング点間と第
３，第４ボンディング点間を電気的に接続するウェッジ
ボンディング方法であって、前記第１ワイヤボンディン
グ手段を用いて、前記アルミニウムワイヤを前記第１，
第２ボンディング点間を直線的に結ぶ方向で前記第１ボ
ンディング点にボンディングを施した後、該アルミニウ
ムワイヤをそのままの方向で前記第２ボンディング点に
導いてボンディングを施すとともに、 前記第２ワイヤボンディング手段を用いて、前記アルミ
ニウムワイヤを前記第３ボンディング点に前記第３，第
４ボンディング点間を直線的に結ぶ方向でボンディング
を施した後、該アルミニウムワイヤをそのままの方向で
前記第４ボンディング点に導いてボンディングを施すこ
とを特徴とする半導体パッケージのウェッジボンディン
グ方法。1. A semiconductor device comprising: a semiconductor pellet; a lead frame having an island on which the semiconductor pellet is mounted; and first and second inner leads; and first and third bondings set on the semiconductor element pellet. With respect to the point, the second and fourth bonding points set on the first and second inner leads are defined by an X-Y plane coordinate system in which the center line of the lead frame is set along the Y axis. , The semiconductor package in which the first and second bonding points are located on the right side of the Y-axis, and the third and fourth bonding points are located on the left side. Between the first and second bonding points and between the third and fourth bonding points using an aluminum wire by first and second wire bonding means juxtaposed along one direction. A wedge bonding method for electrically connecting the aluminum wires to the first and the first wires using the first wire bonding means.
After bonding the first bonding point in a direction connecting the second bonding points linearly, the aluminum wire is guided to the second bonding point in the same direction to perform bonding, and the second wire bonding is performed. Means for bonding the aluminum wire to the third bonding point in a direction linearly connecting the third and fourth bonding points, and then holding the aluminum wire in the same direction as the fourth bonding point. Wedge bonding method for a semiconductor package, wherein the semiconductor package is bonded to the semiconductor device. 【請求項２】 半導体ペレットと、この半導体ペレット
が実装されるアイランドを有するリードフレームと、第
１，第２のインナーリードとを備え、前記半導体素子ペ
レット上に設定された第１，第３ボンディング点に対
し、前記第１，第２インナーリード上に設定された第
２，第４ボンディング点が、前記リードフレームの中心
線がＹ軸に沿うように設定したＸ−Ｙ平面座標系におい
て、Ｘ、Ｙ両方向に偏位し、前記第１，第２ボンディン
グ点が前記Ｙ軸の右側に、一方、前記第３，第４ボンデ
ィング点が左側に位置する半導体パッケージを一方向に
移送するとともに、その一方向に沿って並置された第
１，第２のワイヤボンディング手段によってアルミニウ
ムワイヤを用いて前記第１，第２ボンディング点間と第
３，第４ボンディング点間を電気的に接続するウェッジ
ワイヤボンディング装置であって、 前記第１ワイヤボンディング手段は、前記第１ボンディ
ング点の位置検出を行うボンディング点検出手段と、前
記アルミニウムワイヤを前記第１，第２ボンディング点
間を直線的に結ぶ方向で前記第１ボンディング点にボン
ディングを施した後、該アルミニウムワイヤをそのまま
の方向で前記第２ボンディング点に導いてボンディング
するツールと、前記ボンディング点検出手段による第１
ボンディング点の位置検出データに基づき、前記ツール
を前記第１ボンディング点の真上で対向する位置から第
２ボンディング点の真上で対向する位置まで直進移動さ
せるように動作制御するツール制御手段とを具備し、 前記第２ワイヤボンディング手段は、前記第３ボンディ
ング点の位置検出を行うボンディング点検出手段と、前
記アルミニウムワイヤを前記第３，第４ボンディング点
間を直線的に結ぶ方向で前記第３ボンディング点にボン
ディングを施した後、該アルミニウムワイヤをそのまま
の方向で前記第４ボンディング点に導いてアルミニウム
ワイヤをボンディングするツールと、前記ボンディング
点検出手段による第３ボンディング点の位置検出データ
に基づき、前記ツールを前記第３ボンディング点の真上
で対向する位置から第４ボンディング点の真上で対向す
る位置まで直進移動させるように動作制御するツール制
御手段とを具備することを特徴とする半導体パッケージ
のウェッジワイヤボンディング装置。2. A semiconductor device comprising: a semiconductor pellet; a lead frame having an island on which the semiconductor pellet is mounted; and first and second inner leads, wherein first and third bondings are set on the semiconductor element pellet. With respect to the point, the second and fourth bonding points set on the first and second inner leads are defined by an X-Y plane coordinate system in which the center line of the lead frame is set along the Y axis. , And the semiconductor package in which the first and second bonding points are located on the right side of the Y axis, while the third and fourth bonding points are located on the left side. Between the first and second bonding points and between the third and fourth bonding points using an aluminum wire by first and second wire bonding means juxtaposed along one direction. A wedge wire bonding apparatus for electrically connecting the aluminum wire to the first and second bonding points, wherein the first wire bonding means includes: a bonding point detection means for detecting a position of the first bonding point; A tool for bonding the first bonding point in a direction in which the gaps are linearly connected, guiding the aluminum wire to the second bonding point in the same direction, and bonding the aluminum wire to the second bonding point;
Tool control means for operation-controlling the tool to move straight from a position directly above the first bonding point to a position directly above and opposed to the second bonding point based on the position detection data of the bonding point. The second wire bonding means comprises: a bonding point detecting means for detecting a position of the third bonding point; and the third wire bonding means in a direction linearly connecting the aluminum wire between the third and fourth bonding points. After bonding to the bonding point, a tool for guiding the aluminum wire to the fourth bonding point in the same direction and bonding the aluminum wire, based on position detection data of the third bonding point by the bonding point detecting means, From the position facing directly above the third bonding point A wedge wire bonding apparatus for a semiconductor package, comprising: tool control means for controlling operation so as to move straight to a position directly above the fourth bonding point.
JP5158682A 1993-06-29 1993-06-29 Semiconductor package wire bonding method and wire bonding apparatus Expired - Fee Related JP3026303B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5158682A JP3026303B2 (en) 1993-06-29 1993-06-29 Semiconductor package wire bonding method and wire bonding apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5158682A JP3026303B2 (en) 1993-06-29 1993-06-29 Semiconductor package wire bonding method and wire bonding apparatus

Publications (2)

Publication Number Publication Date
JPH0722455A JPH0722455A (en) 1995-01-24
JP3026303B2 true JP3026303B2 (en) 2000-03-27

Family

ID=15677061

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5158682A Expired - Fee Related JP3026303B2 (en) 1993-06-29 1993-06-29 Semiconductor package wire bonding method and wire bonding apparatus

Country Status (1)

Country Link
JP (1) JP3026303B2 (en)

Also Published As

Publication number Publication date
JPH0722455A (en) 1995-01-24

Similar Documents

Publication Publication Date Title
US6774494B2 (en) Semiconductor device and manufacturing method thereof
US5816477A (en) Wire bonding apparatus and method
US6112973A (en) Angled transducer-dual head bonder for optimum ultrasonic power application and flexibility for tight pitch leadframe
JP3026303B2 (en) Semiconductor package wire bonding method and wire bonding apparatus
KR19990063716A (en) Method for electrically connecting a semiconductor chip with at least one contact surface
JP2598192B2 (en) Semiconductor manufacturing equipment
US5150828A (en) Wire bonding method and apparatus for same capable of packaging semiconductor device into thin package
JPH04370941A (en) Wire bonding
JP5176557B2 (en) Electrode pattern and wire bonding method
JPS593850B2 (en) Semiconductor wire bonding equipment
US6305594B1 (en) Wire bonding method and apparatus
JP2723277B2 (en) Wire bonding method
JPH06132347A (en) Wire bonder
JPH05211193A (en) Wire binding method
JP2823000B2 (en) Wire bonding method
JPH04255237A (en) Manufacture of semiconductor device
KR970007598B1 (en) Method of awire bonding
JPS61190953A (en) Wire bonder
JP3644575B2 (en) Wire bonding equipment
JPH0124931Y2 (en)
JP2853314B2 (en) Nail head bonding method
KR100629272B1 (en) wire bonding method
KR0141173B1 (en) Wire bonding method
JPH0945717A (en) Wire bonding method and capillary used for it
JPH0590320A (en) Ball type wire bonding method

Legal Events

Date Code Title Description
FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090128

Year of fee payment: 9

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100128

Year of fee payment: 10

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110128

Year of fee payment: 11

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110128

Year of fee payment: 11

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120128

Year of fee payment: 12

LAPS Cancellation because of no payment of annual fees