JP2996016B2 - External electrodes for chip-type electronic components - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an external electrode of a chip-type electronic component, and more particularly to an external electrode of a chip-type electronic component having excellent solderability and solder heat resistance. For more information,
Since there is no need to form a plating layer for soldering and it can be used only with external electrodes formed by firing, highly reliable chip-type electronic components can be manufactured in a small number of manufacturing steps at low cost. The present invention relates to an external electrode of a chip-type electronic component that can be used.

[0002]

2. Description of the Related Art External electrodes of chip-type electronic components such as chip inductors, chip resistors, chip capacitors, chip thermistors and the like are made by ceramic-baking a conductive paste prepared by kneading metal powder, glass frit and an organic vehicle. After applying to both ends of bare chip made of aggregate, 60
It is formed by firing at a temperature of about 0 to 800 ° C. The chip-type electronic component having the external electrodes formed in this way is used by soldering the external electrodes to a substrate.

Conventionally, as a conductive powder for forming an external electrode, an Ag-Pd paste containing Pd for improving solder heat resistance has been frequently used together with Ag as a metal powder.

However, in this case, P is contained in the conductive paste.
Since the solderability of the external electrode obtained when d is excessively large is inferior, the Pd content of the formed Ag-Pd external electrode is relatively low at 1 to 15% by weight. For this reason, the solder heat resistance of the conventional Ag-Pd external electrode is not sufficient, and therefore, the solderable temperature range of the chip-type electronic component is limited to a narrow range.

[0005] In order to solve the above-mentioned problems, conventionally, the surface of the external electrode baked as described above is further coated with Ni.
2. Description of the Related Art Two-layer plating of a plating layer and a Sn or Sn / Pb plating layer has been performed. Here, the Ni plating layer is formed mainly for the purpose of improving solder heat resistance, that is, preventing electrode erosion by solder, and is formed of Sn or Sn / Pd.
The plating layer is formed for the purpose of improving solder wettability.

[0006]

However, in a conventional chip-type electronic component in which a two-layer plating of a Ni plating layer and a Sn or Sn / Pd plating layer is further performed on an external electrode formed by sintering, an electrolytic solution is used. When a bare chip with an external electrode is immersed in a solution to form a plating layer, there is a problem that the characteristics of electronic components may be deteriorated. Further, since two plating layers are formed, there is a problem that the number of manufacturing steps is large, production management is complicated, and the product becomes expensive.

The present invention solves the above-mentioned conventional problems, and the external electrodes formed by firing have remarkably good solderability and solder heat resistance. Therefore, there is no need to provide a further plating layer on the external electrodes. An object of the present invention is to provide an external electrode of a chip-type electronic component that can be used only with an external electrode formed by firing.

[0008]

The external electrode of the chip-type electronic component of the present invention has a two-layer structure having an inner layer in contact with the surface of a bare chip made of a ceramic sintered body and an outer layer laminated on the inner layer. In the external electrode, the external electrode is formed by baking a conductive paste containing a metal powder and a glass frit, and the metal powder of the conductive paste forming the inner layer and the outer layer is Ag: 90 to 98 wt%, P
d: 0 to 5% by weight, and Pt: 1 to 5% by weight,
Glass frit PbO: 0 to 40 wt%, B ₂ O _3:
35 to 65% by weight and ZnO: 20 to 55% by weight as main components, and the external electrode contains the glass frit in an amount of 2 to 6% by weight based on the metal powder. Are formed of a conductive paste having the same composition.

Hereinafter, the present invention will be described in detail with reference to the drawings.

FIG. 1 is a sectional view of a multilayer ceramic capacitor showing one embodiment of an external electrode of a chip type electronic component of the present invention.

The multilayer ceramic capacitor 10 of the present embodiment
Has an external electrode 12 having a two-layer structure of an inner layer 12a and an outer layer 12b formed by baking a conductive paste containing metal powder and glass frit on both ends of the bare chip 11. The bare chip 11 is obtained by firing a ceramic green chip obtained by laminating a plurality of ceramic dielectrics having the internal electrodes 13,
The internal electrodes 13 and the external electrodes 12 of the bare chip 11 are electrically connected. Here, as the ceramic dielectric constituting the bare chip 11, a ceramic dielectric such as lead or barium titanate is used, and a noble metal such as Pd, Pt, Ag / Pd, or Ni or C is used for the internal electrode.
Base metals such as u, Fe, and Co are used.

The external electrode 12 having a two-layer structure of the inner layer 12a and the outer layer 12b is formed, for example, as follows.

That is, first, the end of the bare chip 11 is immersed in the conductive paste for the inner layer and then pulled up to 150-20.
After drying at 0 ° C., it is baked at 600 to 800 ° C. to bake the inner layer 12a. Next, the end of the bare chip 11 on which the inner layer 12a is baked is dipped in a conductive paste for an outer layer, pulled up, dried and fired in the same manner as described above, and the outer layer 12b is baked to form the external electrode 12 having a two-layer structure. I do.

In the present invention, the same conductive paste having the following composition is used as the conductive paste for the inner layer and the conductive paste for the outer layer.

That is, Ag: 90 to 98 as the metal powder
%, Pd: 0 to 5% by weight and Pt: 1 to 5% by weight.
0 wt%, B ₂ O _3: 35~65 wt% and ZnO: 2
Using a glass containing zinc borate or lead zinc borate containing 0 to 55% by weight as a main component, 2 to 6% by weight of the glass frit is mixed with the metal powder. Here, if the proportion of the glass frit is less than 2% by weight with respect to the metal powder, the adhesive strength of the formed external electrode to the bare chip is reduced, and if it exceeds 6% by weight, the external electrode surface after sintering has Frit is exposed and solderability is impaired.

In the metal powder composition, if Ag is less than 90% by weight, the sintering temperature becomes high, and if it exceeds 98% by weight, solder heat resistance is poor. Therefore, Ag
Is 90 to 98% by weight. Pd is not required, but Pd
The effect of improving the migration resistance is exhibited by the blending of d. If Pd exceeds 5% by weight, sintering deteriorates, so Pd is set to 0 to 5% by weight. When Pt is less than 1% by weight, solder heat resistance is low, and when Pt exceeds 5% by weight, sintering becomes poor. Therefore, Pt is set to 1 to 5% by weight.

On the other hand, among the components of the glass frit,
ZnO is added in order to increase the bonding strength of the sintered metal to the bare chip. However, if the proportion is less than 20% by weight, the effect is not obtained. Therefore, ZnO
Is 20 to 55% by weight.

B ₂ O ₃ is used as a glass-forming oxide and acts to lower the vitrification temperature without significantly increasing the coefficient of thermal expansion, thereby facilitating vitrification, but its proportion is less than 35% by weight. Then the effect is not enough, 65
If the content is more than 10% by weight, the resulting glass frit will have poor plating solution resistance. Therefore, B ₂ O ₃ is 35 to 65% by weight.
And

PbO is used to lower the melting point of the frit, but if its proportion exceeds 40% by weight, the melting point becomes excessively low. Therefore, PbO is set to 0 to 40% by weight.

In forming the external electrode, the metal powder and the glass frit are used after being kneaded with an organic vehicle in order to adjust the viscosity of the obtained conductive paste and facilitate application to the bare chip surface. As the organic vehicle, one obtained by dissolving methyl cellulose, ethyl cellulose, or the like in an organic solvent such as butyl carbitol or terpineol is used.

The external electrodes of the chip-type electronic component of the present invention can be applied to various chip-type electronic components such as a chip inductor, a chip resistor, and a chip thermistor, in addition to the illustrated multilayer ceramic capacitor.

[0022]

By using the conductive paste according to the present invention to form an external electrode having a two-layer structure by firing, a metal reaction layer is formed at the interface between the inner and outer layers of the external electrode during firing, and soldering is performed. The solder heat resistance can be increased without impairing the solderability.

Therefore, according to the external electrode of the chip-type electronic component of the present invention, it is not necessary to further provide a plating layer for soldering on the surface of the external electrode formed by firing.

[0024]

The present invention will be described more specifically with reference to examples and comparative examples, but the present invention is not limited to the following examples unless it exceeds the gist.

Example 1 A multilayer ceramic capacitor 10 to which the external electrode structure of the present invention shown in FIG. 1 was applied was manufactured. The bare chip 11
Is a lead perovskite system, the internal electrode 13 is a noble metal electrode of Ag / Pd (= 70/30 (weight ratio)), and the size of the bare chip 11 is 3.2 mm.
It is length x 1.6 mm width x 0.8 mm thickness.

The external electrode 12 was formed in the following procedure. An organic vehicle containing ethyl cellulose, butyl carbitol and terpineol is kneaded with 72 parts by weight of a metal powder having the following composition and a glass frit having the following composition of 3% by weight based on the metal powder, and the whole is 100 parts by weight. A paste was prepared.

Metal powder composition (% by weight) Ag: 95 Pd = 3 Pt = 2 Glass frit composition (% by weight) PbO: 40 B ₂ O ₃ : 30 ZnO: 30 The above-mentioned conductive paste is applied to both ends of the bare chip 11 Then, after drying at 200 ° C. under atmospheric pressure for 10 minutes, the temperature was raised to 750 ° C. under atmospheric pressure at a rate of 25 ° C./min, and baked to form the inner layer 12a.

Next, the same conductive paste as that used for forming the inner layer 12a is applied to both ends of the bare chip 11 on which the inner layer 12a has been formed.
After drying for 0 minutes, the temperature was raised to 800 ° C. under atmospheric pressure at a rate of 25 ° C./min, followed by baking to form the outer layer 12b.

The characteristics of the obtained multilayer ceramic capacitor were measured by the following methods. In the following, the numerical value n in parentheses is the number of tested samples.

Tensile Strength (n = 10) A 0.8 mmφ soldered steel wire is adhered to the external electrode of the multilayer ceramic capacitor with a eutectic cream solder on a hot plate at 230 ° C., and the steel wire is pulled to obtain a tensile strength. Was measured. Table 1 shows the results.

Solderability and Solder Heat Resistance The sample is immersed with tweezers in eutectic solder containing Ag (H60-A) melted at 220 ° C., 230 ° C., 250 ° C., and 270 ° C., respectively. The time until the solder was completely applied to the entire surface of the external electrode and the time until the external electrode was eroded and the substrate began to be exposed were examined with an optical microscope. The results are shown in FIG.

Example 2 A multilayer ceramic capacitor was manufactured in the same manner as in Example 1 except that the composition of the metal powder for preparing the conductive paste was as described below.
And FIG.

Metal powder composition (weight ratio) Ag: 98 Pt: 2 Comparative Example 1 A multilayer ceramic capacitor was manufactured in the same manner as in Example 1, except that the inner layer was not formed and the outer electrode was formed only in the outer layer. The measurement results of various characteristics are shown in Table 1 and FIG.

Comparative Example 2 A multilayer ceramic capacitor was manufactured in the same manner as in Example 2 except that the inner layer was not formed and the outer electrode was formed only on the outer layer. The measurement results of various characteristics were shown in Table 1 and FIG. It was shown to.

[0035]

[Table 1]

From Table 1 and FIGS. 2 to 5, the multilayer ceramic capacitor of Example 1 has a higher heat resistance than that of Comparative Example 1, and the capacitor of Example 2 has a lower heat resistance than that of Comparative Example 2. It is evident that it has excellent tensile strength and tensile strength.

[0037]

As described in detail above, the external electrodes of the chip-type electronic component of the present invention have good solderability and solder heat resistance, do not need to form a plating layer for soldering, and are fired. Can be used only with the external electrode formed by the method. Therefore, a highly reliable chip-type electronic component can be manufactured with a small number of manufacturing steps at low cost.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view of a multilayer ceramic capacitor showing one embodiment of an external electrode of a chip-type electronic component of the present invention.

FIG. 2 is a graph showing measurement results of solderability and solder heat resistance of the multilayer ceramic capacitor obtained in Example 1.

FIG. 3 is a graph showing measurement results of solderability and solder heat resistance of the multilayer ceramic capacitor obtained in Example 2.

FIG. 4 is a graph showing measurement results of solderability and solder heat resistance of the multilayer ceramic capacitor obtained in Comparative Example 1.

FIG. 5 is a graph showing the measurement results of solderability and solder heat resistance of the multilayer ceramic capacitor obtained in Comparative Example 2.

[Explanation of symbols]

 Reference Signs List 10 multilayer ceramic capacitor 11 bare chip 12 external electrode 12a inner layer 12b outer layer 13 internal electrode

────────────────────────────────────────────────── ─── Continuation of front page (56) References JP-A-4-162409 (JP, A) JP-A-54-80596 (JP, A) JP-A-2-20319 (JP, U) (58) Survey Field (Int.Cl. ⁶ , DB name) H01G 4/12

Claims (1)

(57) [Claims] 1. An external electrode having a two-layer structure having an inner layer in contact with the surface of a bare chip made of a ceramic sintered body and an outer layer laminated on the inner layer, wherein the external electrode comprises a metal powder and a glass frit. The conductive paste containing the conductive paste is baked, and the metal powder of the conductive paste forming the inner layer and the outer layer contains 90 to 98% by weight of Ag, 0 to 5% by weight of Pd, and 1 to 5% by weight of Pt. Including, glass frit is Pb
O: 0 to 40 wt%, B ₂ O _3: 35~65 wt%, and, ZnO: 20 to 55 as a main component by weight%, and external electrodes, the glass frit with respect to the metal powder An external electrode of a chip-type electronic component, comprising 2 to 6% by weight, wherein the inner layer and the outer layer are formed of a conductive paste having the same composition.