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JP2976947B2 - Bump forming method - Google Patents

Bump forming method

Info

Publication number
JP2976947B2
JP2976947B2 JP9262579A JP26257997A JP2976947B2 JP 2976947 B2 JP2976947 B2 JP 2976947B2 JP 9262579 A JP9262579 A JP 9262579A JP 26257997 A JP26257997 A JP 26257997A JP 2976947 B2 JP2976947 B2 JP 2976947B2
Authority
JP
Japan
Prior art keywords
bonding
bump
wire
wedge
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP9262579A
Other languages
Japanese (ja)
Other versions
JPH11102925A (en
Inventor
誠也 磯崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP9262579A priority Critical patent/JP2976947B2/en
Publication of JPH11102925A publication Critical patent/JPH11102925A/en
Application granted granted Critical
Publication of JP2976947B2 publication Critical patent/JP2976947B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/11—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H01L2224/113—Manufacturing methods by local deposition of the material of the bump connector
    • H01L2224/1133—Manufacturing methods by local deposition of the material of the bump connector in solid form
    • H01L2224/1134—Stud bumping, i.e. using a wire-bonding apparatus
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/1301—Shape
    • H01L2224/13016—Shape in side view
    • H01L2224/13017—Shape in side view being non uniform along the bump connector
    • H—ELECTRICITY
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    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
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    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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    • H01L2924/01022—Titanium [Ti]
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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    • H01L2924/01033—Arsenic [As]
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    • H01L2924/14—Integrated circuits

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明は、バンプ形成方法に
関し、特に半導体集積回路素子（以下ＩＣ素子と称す
る）をフリップチップ接続またはＴＡＢ（Ｔａｐｅ Ａ
ｕｔｏｍａｔｅｄＢｏｎｄｉｎｇ）接続する際に、ＩＣ
素子上の電極と回路基板上の電極またはＴＡＢテープの
インナーリードとを接続するためのバンプ形成方法に関
する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a bump forming method, and more particularly, to a method of flip-chip connection or TAB (Tape A) of a semiconductor integrated circuit device (hereinafter referred to as an IC device).
IC (automated bonding) when connecting
The present invention relates to a bump forming method for connecting an electrode on an element and an electrode on a circuit board or an inner lead of a TAB tape.

【０００２】[0002]

【従来の技術】従来、この種のバンプ形成方法として
は、メッキ法やスパッタ法などがあった。これらの方法
でバンプを形成する場合、バリヤメタル形成工程やエッ
チング工程などの多くの工程を必要とするため、製造工
程数がかさみ製造コスト高となっていた。2. Description of the Related Art Conventionally, as a bump forming method of this kind, there has been a plating method or a sputtering method. When forming bumps by these methods, many steps such as a barrier metal forming step and an etching step are required, so that the number of manufacturing steps is increased and the manufacturing cost is increased.

【０００３】一方、これらの方法よりも製造工程数が激
減できるボールボンディング法による形成方法は、特公
平４−４１５１９号公報に示されている。On the other hand, a forming method by a ball bonding method in which the number of manufacturing steps can be drastically reduced compared to these methods is disclosed in Japanese Patent Publication No. 4-41519.

【０００４】図５は、従来のボールボンディング法によ
るバンプ形成方法を示す工程順断面図である。図５
（ａ）に示すように、キャピラリィー６の孔７に挿入さ
れたワイヤー４の先端に熱エネルギーによりボール８を
形成し、このボール８を図５（ｂ）に示すようにキャピ
ラリィー６の下端面でＩＣ素子の電極２に接合し、図５
（ｃ）に示すようにキャピラリィー６をワイヤー４と相
対的に動かし、図５（ｄ）に示すようにボール近傍の位
置（切欠部９）でワイヤー４を切断し、図５（ｅ）に示
すようにバンプ１を形成していた。FIG. 5 is a sectional view in the order of steps showing a bump forming method by a conventional ball bonding method. FIG.
As shown in FIG. 5A, a ball 8 is formed at the end of the wire 4 inserted into the hole 7 of the capillary 6 by thermal energy, and the ball 8 is placed on the lower end surface of the capillary 6 as shown in FIG. Bonded to electrode 2 of IC element, FIG.
As shown in FIG. 5C, the capillary 6 is moved relatively to the wire 4, and as shown in FIG. 5D, the wire 4 is cut at a position (notch 9) near the ball, as shown in FIG. 5E. Thus, the bump 1 was formed.

【０００５】近年、ＩＣ素子内の回路加工技術は発展
し、その結果集積度が向上し入出力信号数は増加してい
る。この入出力信号の増加にＩＣ素子のサイズを据え置
いたまま対応するために電極の配列ピッチは狭くなり、
電極サイズは小さくなってきている。このような狭ピッ
チ・微小電極へボールボンディング法でバンプを形成す
るためには、ワイヤー先端に形成するボールのサイズを
小さくし、キャピラリィー下端面で電極に接合する際の
ボール変形量を小さく押える必要があった。In recent years, circuit processing techniques in IC elements have been developed, and as a result, the degree of integration has been improved and the number of input / output signals has increased. In order to cope with this increase in input / output signals while keeping the size of the IC element unchanged, the arrangement pitch of the electrodes becomes narrower.
Electrode size is getting smaller. In order to form bumps on such narrow pitch microelectrodes by the ball bonding method, it is necessary to reduce the size of the ball formed at the tip of the wire and to reduce the amount of ball deformation when joining to the electrode at the lower end of the capillary. was there.

【０００６】[0006]

【発明が解決しようとする課題】従来のボールボンディ
ング法によるバンプ形成方法によれば、狭ピッチ・微小
電極に対応するためには、ワイヤー先端に形成するボー
ルのサイズを小さくする必要がある。しかし、小さいボ
ールを形成するためには、与える熱エネルギーを小さく
すればよいが、その熱エネルギーは大気中を伝達するた
め、小さくなると伝達は極めて不安定となり、その結果
形成されたボールのサイズはばらつくことになる。この
ばらつきは、バンプのサイズをばらつかせることにな
り、大きいバンプは隣接バンプとショートを起こす原因
となり、小さいバンプは極度に接合強度が弱くなり後工
程の組立時に不具合を引き起こす。また、ボール変形は
等方的におきるため、隣接バンプとのショートを防ぐた
めにボール変形量を小さく押さえる必要があり、接合面
積の減少による強度の劣化が生じる。従って、従来のボ
ールボンディング法によるバンプ形成方法は狭ピッチ・
微小電極には不向きな製造方法だった。According to the bump forming method by the conventional ball bonding method, it is necessary to reduce the size of the ball formed at the tip of the wire in order to cope with a narrow pitch and minute electrodes. However, in order to form a small ball, it is only necessary to reduce the applied thermal energy. However, since the thermal energy is transmitted in the atmosphere, the transmission becomes extremely unstable when the thermal energy is reduced, and as a result, the size of the formed ball is reduced. Will vary. This variation causes the size of the bumps to vary, and a large bump causes a short circuit with an adjacent bump, and a small bump extremely weakens the bonding strength and causes a failure in assembling in a later process. Further, since the ball deformation occurs isotropically, it is necessary to reduce the ball deformation amount in order to prevent a short circuit with an adjacent bump, and the strength is deteriorated due to a decrease in the bonding area. Therefore, the bump forming method by the conventional ball bonding method has a narrow pitch.
The manufacturing method was not suitable for microelectrodes.

【０００７】一方、ウエッジボンディング法を用いてバ
ンプ形成方法を行う場合、得られる接合部分の形状を、
隣接電極方向には狭く、隣接電極のない方向には広くす
ることができるため高強度で微小なバンプ形成が可能と
なる。また、ボンディングウエッジの移動をコントロー
ルし２段階のボンディングを行うため、フリップ実装後
にＩＣ素子と回路基板間に生じる応力を緩和できるバン
プ高さを実現できる。On the other hand, when the bump forming method is performed by using the wedge bonding method, the shape of the obtained joint portion is
Since it can be narrow in the direction of the adjacent electrode and wide in the direction without the adjacent electrode, it is possible to form a small bump with high strength. In addition, since the movement of the bonding wedge is controlled to perform the two-stage bonding, a bump height that can reduce the stress generated between the IC element and the circuit board after flip mounting can be realized.

【０００８】本発明の目的は、上記した従来技術の欠点
を改良し、狭ピッチ・微小電極に対応したバンプを簡易
に形成する方法を提供することにある。An object of the present invention is to improve the above-mentioned disadvantages of the prior art and to provide a method for easily forming a bump corresponding to a fine pitch and minute electrode.

【０００９】[0009]

【課題を解決するための手段】本発明のバンプ形成方法
は、ウエッジボンディング法を用いたことを特徴とす
る。すなわち、そのバンプ形成方法は、ボンディングウ
エッジ下部から導出したボンディングワイヤーを電極上
に接合し直線状接合部を形成する第１の工程と、その第
１の工程後、ボンディングウエッジを移動しボンディン
グワイヤーを切断しないで上向きに折り返し、折り返し
たボンディングワイヤーを上から圧潰する第２の工程
と、圧潰されたボンディングワイヤーを切断する第３の
工程とを含む。The bump forming method of the present invention is characterized by using a wedge bonding method. That is, the bump forming method includes a first step of joining a bonding wire led out from a lower portion of a bonding wedge to an electrode to form a linear joint, and after the first step, moving the bonding wedge to remove the bonding wire. The method includes a second step of folding the bonding wire folded upward from above without being cut and crushing the folded bonding wire from above, and a third step of cutting the crushed bonding wire.

【００１０】これによりバンプの高さを十分に確保でき
ると共に、バンプの電極面に接合する形状を１方向に長
くして十分な接合強度を得ると共に、隣接電極方向には
狭くするので、狭ピッチな電極に対応できる。[0010] With this, the height of the bump can be sufficiently ensured, and the shape to be bonded to the electrode surface of the bump is lengthened in one direction to obtain a sufficient bonding strength. Can be used for various electrodes.

【００１１】[0011]

【発明の実施の形態】次に本発明に係るバンプ形成方法
の一具体例を図面を参照しながら詳細に説明する。すな
わち、図１（ａ）〜（ｅ）は、本発明のバンプ形成方法
の実施の形態を工程順に示した断面図である。図におい
て、ボンディングウエッジ３は、例えばチタニウムカー
バイト製又はタングステンカーバイト製のものであり、
通常のウエッジボンディングに用いられるものであれば
特に限定されない。導入孔３２はワイヤー４を挿入する
ための斜め方向に設けた孔である。ワイヤー４は材質と
しては例えば直径２０〜３０μｍの金線やアルミニウム
線が用いられる。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, one embodiment of the bump forming method according to the present invention will be described in detail with reference to the drawings. That is, FIGS. 1A to 1E are sectional views showing an embodiment of a bump forming method of the present invention in the order of steps. In the figure, the bonding wedge 3 is made of, for example, titanium carbide or tungsten carbide,
There is no particular limitation as long as it is used for ordinary wedge bonding. The introduction hole 32 is a hole provided in an oblique direction for inserting the wire 4. As the material of the wire 4, for example, a gold wire or an aluminum wire having a diameter of 20 to 30 μm is used.

【００１２】図１（ａ）に示すようにボンディングウエ
ッジ３の下部の導入孔３２から導出したワイヤー４をＩ
Ｃ素子上の電極パッド２に所定の長さで接合する。この
際には未だ直線状の接合部分４０とワイヤー４とはつな
がった状態である。次に図１（ｂ）に示すようにボンデ
ィングウエッジ３を垂直上方向に移動させ、次いで図１
（ｃ）に示すように水平方向に移動させワイヤー４を接
合面で折り返す。そして、図１（ｄ）に示すようにボン
ディングウエッジ３を斜め下方向に移動させ、ワイヤー
４を反対方向に折り返し、接合部にワイヤーを圧潰させ
る。この結果、ワイヤー４はＳ字形に圧潰される。その
後、図１（ｅ）に示すようにクランパー５でワイヤー４
をクランプしボンディングウエッジ３を上昇させ、ワイ
ヤー４を切断する。As shown in FIG. 1A, a wire 4 led out from an introduction hole 32 below a bonding wedge 3 is
A predetermined length is bonded to the electrode pad 2 on the C element. At this time, the linear joining portion 40 and the wire 4 are still connected. Next, the bonding wedge 3 is moved vertically upward as shown in FIG.
The wire 4 is moved in the horizontal direction as shown in FIG. Then, as shown in FIG. 1D, the bonding wedge 3 is moved obliquely downward, the wire 4 is turned back in the opposite direction, and the wire is crushed at the joint. As a result, the wire 4 is crushed into an S shape. Thereafter, as shown in FIG.
To raise the bonding wedge 3 and cut the wire 4.

【００１３】これら一連のボンディングウエッジ３の垂
直上方向の移動量は、好ましくはワイヤー４の直径の
１．５から２倍がよい。このように移動量を制御するこ
とにより、ワイヤー４の折れ曲がり位置を安定して制御
することができる。The vertical upward movement of the series of bonding wedges 3 is preferably 1.5 to 2 times the diameter of the wire 4. By controlling the amount of movement in this way, the bending position of the wire 4 can be stably controlled.

【００１４】図２は本発明の実施の形態のバンプ形成方
法により形成したバンプの形状を示す平面図である。図
２に示すように、図１のバンプ形成方法によりバンプ１
が形成されることにより、ワイヤーのつぶれ方向に異方
性をもたすことが可能になり、隣接するバンプとの間隙
を広くでき（図２のＸ寸法）、かつ電極パッド２とバン
プ１との接合面積は広く取れるために、高強度な接続が
得ることができるため、狭ピッチな電極に対しても対応
できる。FIG. 2 is a plan view showing the shape of a bump formed by the bump forming method according to the embodiment of the present invention. As shown in FIG. 2, bump 1 is formed by the bump forming method of FIG.
Is formed, it is possible to have anisotropy in the direction in which the wire is crushed, the gap between adjacent bumps can be widened (the X dimension in FIG. 2), and the electrode pad 2 and the bump 1 Since a large bonding area can be obtained, a high-strength connection can be obtained, so that it is possible to cope with a narrow-pitch electrode.

【００１５】具体的には、電極ピッチ６０μｍ、電極サ
イズ５５μｍ×７０μｍ、電極数３０４個のＣＭＯＳゲ
ートアレーチップに直径２５μｍの金−パラジウム合金
ワイヤーを用いて図１（ａ）〜（ｅ）の方法によりバン
プを形成した。まず、図１（ａ）のようにワイヤーつぶ
し形状４０μｍ×６０μｍで電極パッド２にワイヤー４
を接合し、図１（ｂ）のようにボンディングウエッジ３
を垂直上方向に４５μｍ移動させ、図１（ｃ）のように
水平方向に６０μｍ移動する。そして、ボンディングウ
エッジ３を斜め下方向に移動させ、図１（ｄ）のように
接合部にワイヤーを圧潰させる。これらのボンディング
ウエッジの移動中はクランパー５は開いた状態である。
その後、図１（ｅ）のようにクランパー５でワイヤー４
をクランプしワイヤー４を切断した。このようにして得
られたバンプ形状は４５μｍ×６５μｍで、高さは４５
μｍであり、接合強度を示すシェア強度は５５ｇｆであ
った。このようなバンプを形成したＩＣ素子を錫銀の共
晶はんだを用いてプリント基板にフリップチップ接続を
したところ、良品率９５％を得た。なお、５％分の不良
内容はバンプが起因する不良ではなかった。More specifically, the method shown in FIGS. 1A to 1E is performed by using a gold-palladium alloy wire having a diameter of 25 μm on a CMOS gate array chip having an electrode pitch of 60 μm, an electrode size of 55 μm × 70 μm, and 304 electrodes. To form a bump. First, as shown in FIG. 1A, a wire 4
And bonding wedges 3 as shown in FIG.
Is moved 45 μm vertically upward and 60 μm horizontally as shown in FIG. 1C. Then, the bonding wedge 3 is moved obliquely downward, and the wire is crushed at the joint as shown in FIG. While these bonding wedges are moving, the clamper 5 is open.
Then, as shown in FIG.
And the wire 4 was cut. The bump shape thus obtained is 45 μm × 65 μm and the height is 45 μm.
μm, and the shear strength indicating the bonding strength was 55 gf. When the IC element having such bumps formed thereon was flip-chip connected to a printed circuit board using a tin-silver eutectic solder, a non-defective rate of 95% was obtained. Note that the defect content for 5% was not a defect caused by the bump.

【００１６】図３と図４は本発明のバンプ形成方法の別
の実施の形態の工程順を示す断面図である。この方法に
よれば、図３（ａ）に示すようにボンディングウエッジ
３の下部に導出したワイヤー４をＩＣ素子上の電極２に
接合し、次に図３（ｂ）に示すようにボンディングウエ
ッジ３を垂直上方向に移動させ、次いで図３（ｃ）に示
すように水平方向に移動させ、図３（ｄ）に示すように
ボンディングウエッジ３を垂直下方向に移動させ接合点
にボンディングウエッジ３を押し当てる。そして、図４
（ｅ）に示すようにボンディングウエッジ３を垂直上方
向に移動させ、図４（ｆ）に示すようにボンディングウ
エッジ３を斜め下方向に移動させ、接合部にワイヤーを
圧潰させる。その後、図４（ｇ）に示すようにクランパ
ー５でワイヤー４をクランプしボンディングウエッジ３
を上昇させ、ワイヤー４を切断する。この方法によれ
ば、図１の方法よりもバンプ形状の制御をより精度良く
行うことが可能であるが、ボンディングウエッジ３の動
作が多くなるため、若干バンプ形成時間が長くなる。FIGS. 3 and 4 are sectional views showing the sequence of steps in another embodiment of the bump forming method of the present invention. According to this method, a wire 4 led out below the bonding wedge 3 is bonded to the electrode 2 on the IC element as shown in FIG. 3A, and then the bonding wedge 3 is formed as shown in FIG. Is moved vertically upward, and then horizontally as shown in FIG. 3C, and the bonding wedge 3 is moved vertically downward as shown in FIG. Press. And FIG.
The bonding wedge 3 is moved vertically upward as shown in FIG. 4E, and the bonding wedge 3 is moved obliquely downward as shown in FIG. Thereafter, the wire 4 is clamped by the clamper 5 as shown in FIG.
Is raised, and the wire 4 is cut. According to this method, the control of the bump shape can be performed more accurately than the method of FIG. 1, but the operation of the bonding wedge 3 is increased, and the bump formation time is slightly longer.

【００１７】本発明の実施の形態は、図１および図３、
図４に示すボンディングワイヤーによるバンプ形成方法
に限定されない。本発明の実施の形態では、ボンディン
グウエッジ下部から導出したボンディングワイヤーを電
極上に接合し直線状接合部を形成する第１の工程と、そ
の第１の工程後、ボンディングウエッジを移動しボンデ
ィングワイヤーを切断しないで上向きに折り返し、折り
返したボンディングワイヤーを上から圧潰する第２の工
程と、圧潰されたボンディングワイヤーを切断する第３
の工程とを含むものであるので、これによりバンプの高
さを十分に確保できると共に、バンプの電極面に接合す
る形状を１方向に長くして十分な接合強度を得ると共
に、隣接電極方向には狭くするので、狭ピッチな電極に
対応できる。An embodiment of the present invention will be described with reference to FIGS.
The method is not limited to the bump forming method using the bonding wires shown in FIG. In the embodiment of the present invention, a first step of bonding a bonding wire led out from a lower portion of a bonding wedge onto an electrode to form a linear bonding portion, and after the first step, moving the bonding wedge to remove the bonding wire. A second step in which the bonding wire is folded upward without being cut, and the folded bonding wire is crushed from above, and a third step in which the crushed bonding wire is cut.
Therefore, the height of the bumps can be sufficiently secured, and the shape of the bumps to be bonded to the electrode surface can be lengthened in one direction to obtain sufficient bonding strength. Therefore, it is possible to cope with narrow pitch electrodes.

【００１８】この場合、第１の工程は、図１の場合、
（ａ）であり、第２の工程は（ｂ）から（ｄ）、第３の
工程は（ｅ）である。In this case, the first step is as shown in FIG.
(A), the second step is (b) to (d), and the third step is (e).

【００１９】また、本発明の別の実施の形態のバンプ形
成方法は、ボンディングウエッジ下部から導出したボン
ディングワイヤーを電極上に接合し直線状接合部を形成
する第１の工程と、その第１の工程における接合終了位
置からボンディングウエッジを移動して１回上向きに折
り返した後、圧潰する第２の工程と、その第２の工程か
らボンディングワイヤーを切断せずに上向きに逆方向に
折り返して圧潰する第３の工程と、第３の工程の後、ボ
ンディングワイヤーを切断する第４の工程とを含むバン
プ形成方法である。その具体的な例が図３、図４に示す
バンプ形成方法である。According to another embodiment of the present invention, there is provided a bump forming method comprising: a first step of bonding a bonding wire led out from a lower portion of a bonding wedge onto an electrode to form a linear bonding portion; A second step in which the bonding wedge is moved from the bonding end position in the step and folded upward once, and then crushed; and in the second step, the bonding wire is folded upward in the opposite direction without cutting and crushing without cutting. The bump forming method includes a third step and a fourth step of cutting the bonding wire after the third step. A specific example is the bump forming method shown in FIGS.

【００２０】なお、上述の実施の形態はＩＣ素子上の電
極にバンプを形成する方法であるが、本発明はキャリヤ
基板や回路基板上の電極上にバンプを形成する場合にも
適用できる。Although the above embodiment is a method of forming a bump on an electrode on an IC element, the present invention can be applied to a case of forming a bump on an electrode on a carrier substrate or a circuit board.

【００２１】[0021]

【発明の効果】以上説明したように本発明のバンプ形成
方法によれば、ウエッジボンディング法を用いるため、
形成されるバンプの形状に異方性を持たすことが可能に
なるため、狭ピッチな電極に対応可能なバンプを得るこ
とができる。As described above, according to the bump forming method of the present invention, since the wedge bonding method is used,
Since it is possible to have anisotropy in the shape of the bump to be formed, it is possible to obtain a bump that can correspond to a narrow-pitch electrode.

【図面の簡単な説明】[Brief description of the drawings]

【図１】（ａ）〜（ｅ）は本発明のバンプ形成方法の実
施の形態の工程順を示す断面図である。FIGS. 1A to 1E are cross-sectional views showing the order of steps in an embodiment of a bump forming method according to the present invention.

【図２】本発明のバンプ形成方法の実施の形態により得
られるバンプ形状の平面図である。FIG. 2 is a plan view of a bump shape obtained by an embodiment of a bump forming method of the present invention.

【図３】（ａ）〜（ｄ）は本発明のバンプ形成方法の他
の実施の形態の工程順を示す断面図である。FIGS. 3A to 3D are cross-sectional views showing a process sequence of another embodiment of the bump forming method of the present invention.

【図４】（ｅ），（ｆ），（ｇ）は図３（ｄ）に続く工
程順を示す断面図である。FIGS. 4 (e), (f), and (g) are cross-sectional views showing a process sequence following FIG. 3 (d).

【図５】（ａ）〜（ｅ）は従来のボールボンディング法
によるバンプ形成方法の工程順を示す断面図である。5 (a) to 5 (e) are cross-sectional views showing a process sequence of a bump forming method by a conventional ball bonding method.

【符号の説明】[Explanation of symbols]

１ バンプ ２ 電極 ３ ボンディングウエッジ ４ ワイヤー ５ クランパー ６ キャピラリィー ７ 孔 ８ ボール ９ 切欠部 DESCRIPTION OF SYMBOLS 1 Bump 2 Electrode 3 Bonding wedge 4 Wire 5 Clamper 6 Capillary 7 Hole 8 Ball 9 Notch

Claims (4)

(57)【特許請求の範囲】(57) [Claims] 【請求項１】 ボンディングワイヤーによって電極上に
バンプを形成する方法において、 ボンディングウエッジ下部から導出した前記ボンディン
グワイヤーを前記電極上に接合し直線状接合部を形成す
る第１の工程と、前記第１の工程後、前記ボンディング
ウエッジを移動し前記ボンディングワイヤーを切断しな
いで上向きに折り返し、折り返した前記ボンディングワ
イヤーを上から圧潰する第２の工程と、圧潰されたボン
ディングワイヤーを切断する第３の工程とを含むバンプ
形成方法。1. A method for forming a bump on an electrode using a bonding wire, wherein a first step of bonding the bonding wire derived from a lower portion of a bonding wedge to the electrode to form a linear bonding portion; After the step, the bonding wedge is moved, the bonding wire is folded upward without cutting, a second step of crushing the folded bonding wire from above, and a third step of cutting the crushed bonding wire. And a bump forming method. 【請求項２】 前記第２の工程は、前記第１の工程にお
ける接合終了位置から前記ボンディングウエッジを垂直
上方向、水平方向に移動し、さらに斜め下方向に移動さ
せて前記ボンディングウエッジを前記直線状接合部上に
押し当てて圧潰することを特徴とする請求項１に記載さ
れたバンプ形成方法。2. The bonding step according to claim 2, wherein the bonding wedge is moved vertically upward and horizontally from a bonding end position in the first step, and is further moved obliquely downward so that the bonding wedge is straightened. 2. The bump forming method according to claim 1, wherein the bump is crushed by being pressed onto the joint. 【請求項３】 前記ボンディングウエッジの垂直上方向
の移動量は、前記ボンディングワイヤーの直径の１．５
倍から２倍であることを特徴とする請求項２に記載され
たバンプ形成方法。3. The vertical upward movement amount of the bonding wedge is 1.5 times the diameter of the bonding wire.
3. The bump forming method according to claim 2, wherein the number is twice to twice. 【請求項４】 ボンディングワイヤーによって電極上に
バンプを形成する方法において、 ボンディングウエッジ下部から導出した前記ボンディン
グワイヤーを前記電極上に接合し直線状接合部を形成す
る第１の工程と、前記第１の工程における接合終了位置
から前記ボンディングウエッジを移動して１回上向きに
折り返した後、圧潰する第２の工程と、前記第２の工程
から前記ボンディングワイヤーを切断せずに上向きに逆
方向に折り返して圧潰する第３の工程と、前記第３の工
程の後、前記ボンディングワイヤーを切断する第４の工
程とを含むバンプ形成方法。4. A method for forming a bump on an electrode using a bonding wire, wherein a first step of bonding the bonding wire derived from a lower portion of a bonding wedge to the electrode to form a linear bonding portion; Moving the bonding wedge from the joining end position in the step and folding the bonding wedge once upward, and then crushing the bonding wedge; and folding the bonding wire upward in the reverse direction without cutting the bonding wire from the second step. And a fourth step of cutting the bonding wire after the third step.
JP9262579A 1997-09-29 1997-09-29 Bump forming method Expired - Lifetime JP2976947B2 (en)

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JP9262579A JP2976947B2 (en) 1997-09-29 1997-09-29 Bump forming method

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Application Number Priority Date Filing Date Title
JP9262579A JP2976947B2 (en) 1997-09-29 1997-09-29 Bump forming method

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Publication Number Publication Date
JPH11102925A JPH11102925A (en) 1999-04-13
JP2976947B2 true JP2976947B2 (en) 1999-11-10

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6593864B1 (en) * 2002-04-15 2003-07-15 Optical Solutions, Inc. Digital-to-analog converter with temperature compensation
US7229906B2 (en) 2002-09-19 2007-06-12 Kulicke And Soffa Industries, Inc. Method and apparatus for forming bumps for semiconductor interconnections using a wire bonding machine

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