JP2839003B2 - Vacuum deposition equipment - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a vacuum deposition apparatus, and more particularly to a vacuum deposition apparatus for selectively depositing a substance on a glass substrate having a conductive film using a metal mask.

[0002]

2. Description of the Related Art As a conventional method of adhering a metal mask, as shown in FIG. 4, a metal mask 16 made of a ferromagnetic material is placed on the lower surface of a semiconductor wafer 17, and an electromagnet or permanent Means for disposing a magnet and bringing the metal mask 16 into close contact with the substrate by the magnetized member 18 is disclosed (Japanese Patent Application Laid-Open No. 7-45662).

In the electron beam lithography apparatus, a method of fixing a mask substrate to a stage in close contact is as shown in FIG. 5 in which a dielectric layer 20 is provided on a stage 19 and placed on the dielectric layer 20. A method in which a voltage is applied between the drawing sample 21 such as a mask substrate or a semiconductor wafer and the stage 19 by the power supply 6 and electrostatic attraction is used, or a three-layer of a dielectric layer, a conductive layer and a dielectric layer is provided on the surface of the stage 19. A method is disclosed in which a sample having a structure is provided, a sample to be drawn is placed, and a voltage is applied between the sample to be drawn and a layer between electrodes (Japanese Patent Laid-Open No. 6-45238).

In the X-ray exposure, as shown in FIG. 6, a mask substrate 23 made of polyimide, an X-ray absorbing material 24, and a dielectric layer 20 for protecting the mask substrate 23 are provided on a wafer 17 coated with a resist 22. A mask 100 provided with a mask pattern provided thereon, the surface of the mask 100 is covered with a conductive layer 25, and the mask pattern is transferred by irradiating the resist with X-rays 26 through the mask 100.
A method is disclosed in which a voltage is applied between a conductive layer and a wafer by a power supply 6 to generate a suction force to attract a mask to a wafer (Japanese Patent Application Laid-Open No. 62-282432).
"X-ray exposure mask and exposure apparatus".

[0005]

However, in the case where a mask made of a ferromagnetic material is attracted to a substrate by the above-mentioned magnetized member, it is necessary to dispose the magnetized member on the side opposite to the film formation surface of the substrate. If the substrate is heated by a lamp heater during vapor deposition, this heater must be installed on the magnetized member side so as not to hinder the vapor deposition, and as a result, this magnetized member will obstruct radiation for heating the substrate. become.

Further, in the vapor deposition, the vapor deposition is generally performed while rotating or revolving the substrate so that the film-forming substance has a uniform film thickness in the plane of the substrate.
The magnetized member also needs to rotate or revolve with the substrate. For example, when an electromagnet is used for the magnetizing member, the power source for the electromagnet needs to be supplied with a brush or rotated together with the substrate, so that the rotating mechanism becomes complicated or a large load is imposed. Further, the load on the rotating mechanism is the same even when a permanent magnet is used.

[0007] A mask used in vacuum deposition has an opening similar to a desired pattern, and an evaporating substance from an evaporation source reaches the substrate through this opening. Therefore, the conductive layer and the dielectric layer provided between the mask and the substrate in order to obtain the electrostatic attraction need to have a shape having the same opening as the mask. It is necessary to align the mask with the mask.

Further, in a configuration in which a dielectric layer and a metal mask having an opening are sequentially provided on the conductive layer side of a glass substrate having a conductive layer, a space between the conductive layer and the metal mask is provided for electrostatic attraction. When a voltage is applied, there is a danger that creeping discharge occurs between the metal mask and the conductive layer along the side surface of the opening of the dielectric layer. Further, when a metal substance is vapor-deposited in this configuration, the metal mask and the conductive layer are electrically connected by the vapor-deposited metal, and the configuration for performing electrostatic attraction cannot be maintained.

[0009]

The mask for vapor deposition according to the present invention is characterized in that the entire surface of the mask is covered with an insulating film.

[0010] Further, the vapor deposition apparatus of the present invention is characterized in that it has a switch capable of electrically and mechanically opening and closing a power supply between the metal mask and the conductive layer.

[0011]

DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described with reference to FIGS. 1 (a), 1 (b) and 2. FIG.
1A is a cross-sectional view near the substrate, FIG. 1B is a plan view of a mask, and FIG. 2 is a cross-sectional view illustrating a configuration of the present invention.

In FIG. 1A, a transparent conductive film 2 is formed on the surface of a glass substrate 1. This transparent conductive film 2
Are electrically connected to a power supply 6 via a substrate holder 7. The metal mask 3 has an opening 4 in the same shape as the pattern formed on the glass substrate 1 as shown in FIG. Except for the part, it is covered with the insulator 5.

The surface of the mask holder 8 holding the metal mask 3 is covered with the insulator 5 except for a connection portion 28 connected to the metal mask 3. Since the metal mask 3 and the mask holder 8 are electrically connected at the connecting portion 28, the metal mask 3 is electrically connected to the power source 6 via the mask holder 8. Further, a DC voltage can be applied between the metal mask 3 and the transparent conductive film 2 on the glass substrate 1 by the power supply 6.

In FIG. 2, a substrate holder 7 holding an outer peripheral portion of the glass substrate 1 and a mask holder 8 holding an outer peripheral portion of the metal mask 3 are used to secure a relative position between the glass substrate and the metal mask. Is set on the positioning jig 9. The positioning jig 9 holds and fixes the outer peripheries of the substrate holder 7 and the mask holder 8 so that the glass substrate 1 and the metal mask 3 are secured in a horizontal relative position and also in a close proximity in the vertical direction. .

The lamp heater 10 is provided to heat the glass substrate by using the radiant heat. The lamp heater 10 is installed on the upper part of the glass substrate 1 opposite to the film forming surface of the glass substrate so as not to hinder the film formation during the vapor deposition, so that the glass substrate can be heated even during the vapor deposition. The deposition material 11 is provided in the heating unit 12, and is heated and evaporated by a resistance heating method.

Each of the above components is isolated from the outside air by a partition wall 13. At the time of vapor deposition, a vacuum is secured by a vacuum pump (not shown) or the like connected to the partition wall.

Next, the operation of the present invention will be described. The transparent conductive film 2 on the surface of the glass substrate 1 connected via the substrate holder 7 using the power source 6 shown in FIG.
By applying a DC voltage between the mask 3 and the metal mask 3 connected via the mask holder 8, the mask 3 and the glass substrate 1 are brought into close contact with each other by electrostatic attraction.

[0018]

Embodiment 1 FIG. 1 shows a first embodiment of the present invention.
This will be described with reference to (a) and (b) and FIG. FIG. 1 (a)
In the glass substrate 1, an electrode for driving a luminescent substance formed by vapor deposition is formed on the surface of the glass substrate 1. Since this electrode needs to be transparent so as not to block light emission of the light emitting substance, a transparent conductive film 2 made of ITO (indium tin oxide) is used. The conductive film 2 is connected to a power source 6 via a substrate holder 7 made of a conductor.

The metal mask 3 has a width of 1 as shown in FIG. 1B in order to form a luminescent substance in a desired pattern.
An opening 4 having a thickness of 100 μm and a length of several hundreds mm is provided. Is used. The surface of the metal mask 3 other than the connection portion 28 that needs to be electrically connected to the mask holder 8 is sufficiently small with respect to the size of the mask opening, and an electrostatic attraction force is obtained. It is covered with an insulator 5 of a silicon oxide film having a thickness of several tenths of micrometers formed by dip coating or the like.

The metal mask holder 8 is also covered with the insulator 5 except for the connection portion 28, and the mask holder 8 is connected to the power supply 6. The metal mask 3 installed on the mask holder 8 is electrically connected to the mask holder 8 by the connection part 28 and is electrically connected to the power source 6 via the mask holder 8.

In FIG. 2, the substrate holder 7 and the mask holder 8 hold the outer circumferences of the glass substrate 1 and the metal mask 3, respectively. When the substrate holder 7 and the mask holder 8 are set on the positioning jig 9, The relative position of the glass substrate 1 and the metal mask 3 and the distance from the evaporation source are fixed. A lamp heater 10 for heating the glass substrate 1 is installed on the upper part of the substrate holder 7, and a deposition material 11 and a heating unit 12 for resistively heating the deposition material 11 are installed on the lower part of the substrate holder 7. ing. In this device, the inside of the room can be depressurized by a vacuum pump (not shown) connected to the partition 13 by covering the outer periphery with the partition 13.

Next, the operation of this embodiment will be described.
In FIG. 1A, the conductive film 2 on the surface of the glass substrate 1 connected to the power supply 6 via the substrate holder 7 and the connection portion 28 via the mask holder 8 connected to the power supply 6 establishes electrical continuity. By applying a DC voltage of about 150 V using the power supply 6 between the metal mask 3 and the removed metal mask 3, the metal mask 3 and the glass substrate 1 are separated from the conductive film 2 on the surface of the glass substrate 1 and the metal mask 3. Adhering due to electrostatic attraction acting between them.

In FIG. 2, the inside of the partition 13 is kept at a vacuum by a vacuum pump (not shown), and the glass substrate 1 is heated to a temperature required for vapor deposition by a lamp heater 10 for substrate heating, and the vapor deposition material 11 is heated. The heating is performed by the resistance heating method by the unit 12 to perform vapor deposition. A part of the vaporized material evaporated toward the substrate reaches the insulating film 5 on the mask surface shown in FIG. 1 and the other reaches the conductive film 2 of the glass substrate 1 exposed through the mask opening 4 and is formed on the glass substrate. A film is formed.

According to the present embodiment, even if electrostatic attraction is performed, there is nothing between the glass substrate 1 and the lamp heater 10 that blocks the radiant heat of the lamp heater, so that the glass substrate can be efficiently heated. In addition, the accuracy of the film formation position can be improved by about several tens of μm as compared with the case where no suction mechanism is provided.

[0025]

[Embodiment 2] A second embodiment of the present invention will be described with reference to FIGS. 3 (a) and 3 (b). FIG. 3A is a cross-sectional view near the metal mask, and FIG. 3B is a perspective view of a rotating part of a positioning jig 9 on which the substrate holder 7 and the mask holder 8 are installed.

In FIG. 3 (a), the metal holder 3 is electrically connected to the mask holder 8 and the power source 6, and the conductive film 2 is electrically connected to the substrate holder 7 and the power source 6. A switch 14 is provided between the two.

The positioning jig 9 on which the substrate holder 7 and the mask holder 8 are installed has a structure that can be rotated, for example, in the direction of an arrow 29 by the rotating part 15 in FIG. Other configurations are the same as those in FIG.

After the switch 14 is closed and a DC voltage is applied between the metal mask 3 and the conductive film 2 from the power source 6, the glass substrate 1 and the metal mask 3 are brought into close contact by electrostatic attraction, and then the switch 14 is released. Since the electrostatic attraction force is maintained even when the switch is released, the glass substrate and the metal mask are kept in close contact with each other.

When the switch 14 is released, the positioning jig 9 holding the substrate holder 7 and the mask holder 8 and other fixed parts such as a power supply part are mechanically cut off.
The positioning jig 9 can be rotated while holding the substrate holder 7 and the mask holder 8. The vapor deposition is performed in the same manner as in the first embodiment except that the positioning holder is rotated by the rotating unit 15.

According to the present embodiment, for example, it is possible to perform adsorption without applying a new load such as a power supply unit that hinders rotation to the rotating unit, and to perform vapor deposition while adsorbing the glass substrate and the metal mask. It is possible to rotate the glass substrate.

[0031]

The present invention is configured as described above and has the following effects.

The first effect is that the heating of the glass substrate
That is, the radiation heat of the lamp heater is not blocked.

The reason is that there is no structure for adsorption on the upper part of the glass substrate.

The second effect is that, in obtaining a desired film formation pattern, a conventional vapor deposition method of selectively forming a film by an opening pattern of a metal mask while using a conventional metal mask can be employed.

The reason for this is that a structure capable of adsorbing by covering the surface of the metal mask with an insulating film is obtained.

A third effect is that the substrate can be rotated while keeping the glass substrate and the metal mask in close contact.

The reason is that the switch is provided between the conductive film and the mask portion and the power supply, so that the rotating portion and the fixed portion can be mechanically separated from each other, and no power supply is required for maintaining the electrostatic force. It is.

A fourth effect is that metal deposition can be performed while electrostatic adsorption is performed.

The reason is that since the entire surface of the metal mask is covered with the insulating film, the conductive film and the metal mask are not electrically connected.

[Brief description of the drawings]

FIG. 1A is a cross-sectional view showing the vicinity of a metal mask for vapor deposition according to an embodiment of the present invention. (B) is a plan view of the evaporation mask shown in (a).

FIG. 2 is a cross-sectional view illustrating a configuration of a vapor deposition apparatus according to the embodiment of the present invention.

FIG. 3A is a sectional view showing the vicinity of a mask according to a second embodiment of the present invention. (B) is a perspective view showing a rotating unit of a second embodiment according to the present invention.

FIG. 4 is a cross-sectional view near a mask using a conventional magnetized member.

FIG. 5 is a cross-sectional view of a mask suction unit of a conventional electron beam writing apparatus.

FIG. 6 is a sectional view showing the vicinity of a mask portion of a conventional X-ray exposure apparatus.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Glass substrate 2 Conductive film 3 Metal mask 4 Opening 5 Insulator 6 Power supply 11 Evaporation substance 14 Switch 15 Rotating part 28 Connection part

Continuation of the front page (72) Inventor Kazutaka Masmura 5-7-1 Shiba, Minato-ku, Tokyo Within NEC Corporation (56) References JP-A-6-45238 (JP, A) (58) Fields surveyed (Int.Cl. ⁶ , DB name) C23C 14/50 C23C 14/04 C23C 14/24 H01L 21/203 H05K 3/14

Claims (4)

(57) [Claims] An evaporation source for a vapor deposition material provided in a lower part of a vacuum vessel provided with a vacuum evacuation system, and a substrate having a conductive thin film formed on the surface thereof, the substrate being located above the evaporation source.
A substrate holder that holds the thin film so as to face the evaporation source, and a metal mask that is located below the substrate holder and that has the same opening as the pattern formed on the substrate surface and whose surface is covered with an insulator And a mask holder for supporting the substrate, and means for applying a voltage between the substrate supported by the substrate holder and the metal mask supported by the mask holder. 2. The substrate holder supporting the substrate has a structure capable of obtaining electrical continuity with a conductive thin film formed on the surface of the substrate, and the mask holder supporting the metal mask includes the substrate holder. 2. The vacuum evaporation apparatus according to claim 1, wherein the vacuum evaporation apparatus has a structure in which the metal part of the metal mask whose surface is covered with an insulator is electrically insulated from the metal mask. 3. The vacuum evaporation apparatus according to claim 1, wherein the heating means of the evaporation source is a resistance heating method or an electron beam heating method. 4. The vacuum deposition apparatus according to claim 1, wherein a switch is provided between said substrate and said metal mask and means for applying said voltage to said substrate and said metal mask.