JP2829232B2 - IC device processing equipment - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION [0001] BACKGROUND OF THE INVENTION 1. Field of the Invention
Local to the desired location of the IC element where the wiring pattern is to be corrected
The present invention relates to an apparatus for processing an IC element for forming a film. [0002] 2. Description of the Related Art Semiconductor integrated circuits, GaAs devices, magnetic valves
Pattern for flash memory, Josephson devices, etc.
The width and wiring width are steadily miniaturized. That is, 3
A device having a width of μ to 2 μ is realized, and 1.5 μ, 1
Devices with wiring widths of μ and submicron are being developed.
Conventionally, at the device development stage,
The cutting of wiring for debugging is required at the stage of device fabrication.
Repair, write, resistance, capacitance,
Measures such as disconnection and connection of some of the elements
Was. [0003] The following is a typical example for debugging.
The cutting of the Al wiring will be described. Below are Au and Poli Sili
Obviously, the present invention can be applied to wiring such as con. [0004] Semiconductor integrated circuits (hereinafter referred to as "IC")
Design failure and process failure in the design and development process
Therefore, the prototype chip does not operate as it is
There are many. In this case, in order to determine
It is necessary to perform operation tests etc. by cutting the wiring on the sides.
You. For a pattern of 5μ or more,
While observing the device with a microscope
Use a method of cutting with a thin metal needle attached
I was there. However, this method has a low success rate and
Cannot be used for ICs with 3μ pattern or less due to the need for kneading
It is. FIG. 1 shows the cutting of IC wiring by laser.
The device is shown. Laser beam 1a emitted from laser oscillator 1
Is reflected by the mirror 2, and then the combination of the lenses 3a and 3b
Beam expander 3
Of the rectangular pattern by the variable slits 5 and 6
An image of the sample 8 placed on the stage 9 by the lens 7
Image on top. In this case, the reference light lamp 2a
These lights are reflected by the concave mirror 2b and are reflected by the lens 2c.
Parallel beams are distributed along the same path as the laser beam.
Since it forms an image on a line, it is used to determine the position of the laser removal section.
And so on. That is, in FIG.
Numeral 11 is adjacent to the portion 10 having no wiring. That is
2b is as shown in FIG. 2B._Two
Al wiring 15 is formed with the insulating layer 14 interposed therebetween.
In FIG. 1, the image 12 of the slits 5, 6 due to the reference light 2d
Is projected, and the width of the slit is set to the micrometer 5a,
6a to match the width of the wiring 11 to be cut
You. After that, if the laser is irradiated, the laser light will be exactly the same
An image is formed on the device 12 and this portion is removed. In this case the following
There was such a problem. That is, it is melted by laser
Part scatters around and adheres to adjacent parts, deteriorating characteristics
Or short circuit may occur. Also damage the lower Si
And a part of Si melts and rises
This causes a short circuit with the Al wiring. Also beside the wiring
Even if there is no effect on the part without the adjacent Al wiring,
Damages Si and causes Al-Si short circuit similar to the above.
Easy to make. This is mainly the positioning of the laser irradiation area.
Part of the laser beam irradiates the part without Al wiring
Or in the case of heat conduction and scattering of Al,
This is to cause damage. [0005] In particular, as shown in FIG.
When the passivation film 18 is coated on
These films 18 are generally made of SiO2, Si3N4 or the like.
Laser is transparent and transparent to laser light.
Is not processed by the laser, and the lower Al wiring 15 absorbs the laser.
And receives thermal energy to passivate the upper passivation film
And break out. So this
In this case, the scattered Al particles have no passivation film.
Has much higher energy than when
As shown in FIG. 4B, the lower part and the periphery may be damaged.
In addition, cracks occurred in the passivation film itself
To Furthermore, the cut part has a hole in the passivation film.
Poor characteristics because there is no way to fill this easily
There was a problem that came to be. [0006] Further, as a fundamental problem, ICs are fine.
, High integration, and the wiring width is 2 μm to 1.5, 1 μm.
Laser application to the trend of narrowing to submicron
The wiring cutting method by engineering has a limit. That is, as shown in FIG.
The imaging projection method described above also allows the lens 2 as shown in FIG.
1 to narrow the beam, and place the sample at the focal point 22
Even when processing it, the wavelength is limited due to the diffraction limit of the laser beam.
(0.5 μm in visible light) It is difficult to obtain a spot diameter.
is there. Furthermore, in laser processing, the material absorbs laser light.
The process of blowing this off after it turns into heat
Avoids the effects of surroundings due to heat conduction and melt-out
It is impossible to cut it, and the processing zone and the heat affected zone are spot
It was always larger than the diameter. Ie
The practical minimum processing dimension is about 1 μm.
Apply laser processing method to wiring patterns of μm or less
It was difficult to do. Also, as a prior art,
6-80131, JP-A-56-94630
, Applied Physics Letter "A High Inte
Activity scanning Ion probe with
  Submicrometer spot size (Appl.
Phys. Lett. 34 (5), "A highin
strength scanning ionprobe
  with submicrometer spot
size ") P310-311, departure March 1, 1979
And the Institute of Applied Physics, Semiconductor Engineering Laboratory, RIKEN
Japan Society for the Promotion of Science
132th Committee of the 13th Symposium on Industrial Applications
Injection and submicron processing ”February 3-5, 1982
Page 19-Page 22 "Smile Focusing by Liquid Metal Ion Source"
Devices "are known. Both conventional technologies are simply focused
Describes sputter etching technology using ion beam
It is just something that has been done. And SIM observation equipment
Simply observe the sputter-etched state.
It is just something. [0007] SUMMARY OF THE INVENTION The purpose of the present invention is to
The method of cutting the wiring of IC by the conventional laser processing
Eliminates the drawbacks of the device,
Completed VLSI, ULSI, etc. with differential protection film
Cut the wiring under the protective film for the IC element
After cutting, locally form an insulating film, wiring layer, etc.
Analyzes and corrects defective parts, greatly shortening the development period
Reduction, improvement of yield during development, etc.
An object of the present invention is to provide an IC device processing apparatus. [0008] The present invention achieves the above object.
In order to achieve this, it has at least a lens barrel and a sample chamber
For IC device processing equipment configured to form a vacuum chamber
The lens barrel has a high brightness
Ion source means and radiation from the high intensity ion source means.
Charged particle optics to focus focused high intensity ion beam
Blanket for irradiating and stopping the step and high-intensity ion beam
Scanning with focusing electrode means and focused high-intensity ion beam
And a deflection electrode means for causing the sample chamber to store the IC element.
Focusing by means of sample stage to be installed and means of charged particle optics
The irradiated ion beam onto the surface of the IC element.
Therefore, secondary electrons or secondary electrons generated from the surface of the IC element
Secondary charged particle detector means for detecting ions, and the secondary charged particle detector means
Secondary electrons or secondary electrons detected by the charged particle detector means
Run to display a SIM image of the surface of the IC element based on ON
Inspection ion microscope means and on the IC element inside the sample chamber
The gas containing the components of the film to be formed is passed through the on-off valve to the processing chamber.
Gas supply means supplied from outside by a nozzle, and processing
Monitoring means for monitoring the pressure inside the chamber;
Based on the pressure inside the processing chamber monitored by the
Control means for controlling the on-off valve by means of a gas introduction means.
High-intensity ion beam with gas introduced from the nozzle
By scanning the desired area of the IC element
A local film is formed on the IC element. [0009] The present invention also provides at least a lens barrel and a sample chamber.
Element having a portion and configured to form a vacuum chamber
In the processing apparatus of (1), the lens barrel is provided with a predetermined ion type.
Equipped with multiple ion sources that emit high-intensity ion beams
High intensity ion source means and a plurality of high intensity ion source means
Switch the ion source of the
Switching means for extracting the on-beam and switching by this switching means
High-intensity ion beam composed of specific ion species
Charged particle optics to focus the beam
Blanking electrode means for irradiating and stopping the beam;
Deflection electrode hand for scanning focused high intensity ion beam
And a sample chamber, in which a sample stage is provided for mounting an IC element.
Step and ion beam focused by charged particle optics means
By irradiating the surface of the IC element with the
Detect secondary electrons or secondary ions generated from the surface
Secondary charged particle detector means and a secondary charged particle detector
I based on the secondary electrons or ions detected in the stage
Scanning ion microscope hand to display SIM image of surface of C element
Steps and components of the film formed on the IC element inside the sample chamber
Gas from the outside of the processing chamber through the on-off valve
Gas supply means and pressure inside the processing chamber
Monitoring means for monitoring the
Controls the on-off valve based on the pressure inside the processing chamber
Control means, and the gas is introduced from the nozzle by the gas introduction means.
The high-intensity ion beam is applied to the IC element with the
By scanning and irradiating the desired area, the station
It was configured to form a film locally. [0011] In particular, in the case of the present invention, 0.3 to 0.1 .mu.m or less.
The following spot diameter can be obtained and the processing
Is a collision between ions and target atoms
The effect on the surroundings due to heat diffusion is almost
It is possible to work with dimensions of 0.3μ or less.
And an ion beam with a spot diameter of 0.3 μm or less
Protective film (passivation) near the location where the
Projection on the observation area on the surface)
Then, the observation area of the surface of the protective film which is scanned and projected and irradiated is
Secondary electrons or ions generated from the secondary charged particles
Detected by a detector and expanded on the scanning ion microscope
The large SIM image is displayed and observed under magnification.
As shown in FIG.
Controlling the scanning area by the poles and trying to form the local film
0.3 μm or less by the charged particle optical system
Ion beam projected with the ion beam spot diameter below
The film is scanned and irradiated to locally form an insulating film, etc.
Can be used to protect wiring cutting points, etc.
Wiring film can be formed to connect the cut wiring.
You. [0012] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below with reference to the drawings. Figure
FIG. 6 shows an embodiment of the wiring cutting apparatus according to the present invention. The apparatus shown in FIG.
A lens barrel 39, a sample chamber 40, and a sample chamber 40 are connected to each other.
The sample exchange chamber 41, the evacuation system, and the mass
Stage 55, liquid metal ion source 65, control
(Bias) electrode 66, ion beam extraction electrode 6
7, aperture 69, electrostatic lenses 70, 71, 72,
Rashing electrode 73, aperture 74, deflection electrode 75,
76, filament power supply 77, control electrode power supply
Source 78, power supply 79 for extraction electrode, electrode 8 for electrostatic lens
0, 81, high voltage power supply 82, power supply 8 for blanking electrode
3. Power supply for deflection electrode 84, power supply control device 85, sample chamber
Secondary charged particle detector 86 inserted in 40, SIM
(Scanning ion microscope) Observation device 87, ion beam
Means 89 for preventing spot disturbance due to electric charge.
You. The gantry 37 is supported by an air support 38.
Seismic measures are in place. The sample chamber 40 and sample exchange
The exchange chamber 41 is installed on the gantry 37, and the sample chamber 40
The lens barrel 39 is set on the. The sample chamber 40 and the lens barrel 39 are connected by a gate bar.
The sample 40 and the sample exchange chamber 41
Is separated by another gate valve 43. The vacuum evacuation system is an oil rotary pump.
47, oil trap 48, ion pump 49, turbo
The molecular pump 50 and the valves 51, 52, 53, 54
It is configured to have. This vacuum pumping system and the lens barrel 3
9, the sample chamber 40 and the sample exchange chamber 41 are a vacuum pipe 44,
45, 46, these lens barrel 39, sample chamber
40, the sample exchange chamber 41 and vacuum pipes 44, 45, 46
The lens barrel 39, the sample chamber 40, and the sample
Exchange room 41 is 10 ~^FiveIt is possible to make vacuum below torr
ing. On the stage 55 described above, a rotation introduction terminal 61,
X, Y, and Z moving micro
Are fixed, and the movement
The loading table 55 is provided with these moving tools.
With the use of the icrometers 56, 57, 58 and the moving ring 59,
X, Y, Z directions of fine movement and rotation angle in horizontal plane
Is to be adjusted. A sample stage 60 is provided on the stage 55 described above.
And the sample is placed on the sample stage 60.
ing. Then, the sample stage 60 is moved by the sample drawer 64.
Between the sample chamber 40 and the sample exchange chamber 41.
When changing the sample, open the gate valve 43 and
The platform 60 is pulled out into the sample chamber 40, and the gate valve 43 is closed.
Open the door of the sample exchange chamber 41, exchange and place the sample,
Close the door and exhaust the sample exchange chamber 41
Open the sample valve 43 and insert the sample stage 60 into the sample chamber 40.
It has become so. Note that in FIG.
Indicated by 0. The liquid metal ion source 65 is
The head is provided facing the sample chamber 40. This liquid
The body metal ion source 65 shown in FIG. 7 is made of an insulator.
Base 650 attached to the base 650 in a U-shape
Made of filament 651, 652, tungsten etc.
And a spot between the distal ends of the filaments 651 and 652.
Sharp needle 653 attached by welding
And the metal 654 serving as an ion source attached to the
It is configured to have. Metal 654 to be the ion source
For example, Ca, In, Au, Bi, Sn, and Cu are used.
The filaments 651 and 652 are connected to the electrodes 65 thereof.
1 'and 652', as shown in FIG.
2 is connected to the filament power supply 77 connected to
You. The control electrode 66 is a liquid metal electrode.
Installed below the ON source 65 and connected to the high voltage power supply 82
Connected to the concrete power supply 78
A low positive / negative voltage is applied to the installation position of the control electrode 66.
To control the current which is an ion beam. The extraction electrode 67 for the ion beam is
Control electrode 66 and a high-voltage power supply 8
2 is connected to the extraction electrode power supply 79 connected to
You. And a filament of the liquid metal ion source 65
651, 652, and 10 ~^FiveVacuum below torr
After heating and melting in
When a negative voltage of 10 KV is applied, the liquid metal ion source 6
5 from the extremely narrow area at the tip of the needle 653.
The beam is pulled out. Note that the ion beam in FIG.
Reference numeral 68 denotes a spot and reference numeral 68 'denotes a spot. The aperture 69 is connected to the extraction electrode 67.
It is installed at the lower level and is extracted by the extraction electrode 67.
Only take out near the center of the ion beam
I have. The set of the electrostatic lenses 70, 71, 72 is an aperture
Arranged below the cheer 69 and connected to the high voltage power supply 82
Lens power supplies 80 and 81. these
The electrostatic lenses 70, 71, 72 of the
To focus the extracted ion beam.
You. The blanking electrode 73 is an electrostatic lens
72, and connected to the control device 85.
It is connected to a blanking electrode power supply 83. This
The ranking electrode 73 is an ion beam
Scan in the direction perpendicular to the direction toward the sample,
Outside the aperture 74 located below the king electrode 73
And stop irradiation of the IC element with the ion beam at high speed.
It is designed to stop. The aperture 74 includes an electrostatic lens 70,
The ion beam spots focused at 71 and 72 are
4 or 0.3 to 0.1 μm on the IC element shown in FIG.
Or to form a projection image with a smaller spot diameter.
ing. The set of the deflection electrodes 75 and 76 has an aperture.
A. It is installed below the device 74 and connected to the control device 85.
Is connected to the deflection electrode power supply 84. This deflection electrode
75, 76 are focused by the electrostatic lenses 70, 71, 72
The spot of the ion beam is deflected in the X and Y directions.
And 0.3 to 0.3 on the IC element shown in FIG.
It is possible to connect with a spot diameter of 1 μm or less.
ing. The filament of the liquid metal ion source 65
Power supply 77, control electrode power supply 78, ion beam
Power supply 79 for the extraction electrode of the camera and power supplies 80 and 81 for the lens
The high voltage power supply 82 for applying a voltage has a voltage of several tens of KV.
used. The control device 85 is provided for a blanking electrode.
Blanket through the power supply 83 and the power supply 84 for the deflection electrode.
Electrodes 73 and deflection electrodes 75 and 76 are fixed
Control to operate according to the The secondary charged particle detector 86 is provided in the sample chamber 4
It is installed toward the sample which is an IC element within 0,
In response to a control signal from the control device 85, the blanking electrode
The blanking electrode 73 and the deflection
The deflection electrodes 75 and 76 are controlled via the pole power supply 84,
A pad having a step of the IC element shown in FIG. 4 or FIG.
In the observation region on the surface of the evaporation film (protective film) 18,
0.3 to 0.1 μm or smaller ion diameter spot
When the beam spot is scanned and irradiated,
Secondary electrons or 2 emitted from the surface of the
Accepts the next ion and adjusts its intensity according to the step
And send the signal to the SIM observation device 87
Has become. The SIM observation device 97 includes a CRT 8
8 is provided. Then, the SIM observation device 87 performs observation
In order to observe the area, the ion
Receiving a signal regarding the amount of deflection of the beam in the X and Y directions,
Scans the bright spot of the cathode ray tube 88 in synchronization with
The brightness of the bright spot is sent from the secondary charged particle detector 86.
By changing according to the signal of the incoming current intensity,
Each point on the surface of the passivation film 18 having a step
To obtain a step image corresponding to the secondary electron emission ability in the SI
M, that is, the function of the scanning ion microscope
Magnification observation can be performed. The spot of the ion beam due to the charge
A means 89 for preventing disturbance is provided between the deflection electrode 76 and the IC element.
Is placed. Diagram of means 89 for preventing this spot disturbance
8 shows the direction that intersects the ion beam passing direction
Electronic showers 890, 891 are facing each other.
The electronic showers 890, 891 have a cup-shaped main body 892,
Of the filament 893 and the main body 892 provided inside the
And a grid-like extraction electrode 894 provided in the opening.
It is configured. And each electronic shower 890, 89
1 is extracted from the filament 893 by the electrode 894.
An electron flow 895 is extracted at an acceleration voltage of about 00 V,
Stream 895 into the space through which the ion beam passes,
The beam is given a negative charge to neutralize it.
8, reference numeral 68 denotes an ion beam, and reference numerals 75 and 76 denote polarized beams.
The counter electrode 90 indicates a sample which is an IC element. Next, referring to FIGS. 6 to 9a and 9b,
In addition to the operation of the device for repairing elements of
One embodiment of the correct method will be described. Samples that are IC elements
90 is placed on the sample stage 60 in the sample exchange chamber 41
Then, the sample exchange chamber 41 is closed, and the sample
After exhausting the sample, the sample chamber is
40 and placed on a stage 55. Then, the lens barrel 39 and the sample are evacuated by the vacuum exhaust system.
10 ~ in the room 40⁶Vacuum to about torr, then vacuum
To keep. Next, in the apparatus shown in FIG.
And the IC chip or wafer shown in FIG.
A method of cutting the wiring by setting it on the stage 90 will be described.
I will tell. First, a filament power supply is supplied by the high voltage power supply 82.
77, control electrode power supply 78, and extraction electrode
Activate the power supply 79 to open the liquid metal ion source aperture.
A high-brightness ion beam is extracted from the
Activate the sources 80, 81 to activate the electrostatic lenses 70, 71, 72
And 0.3 to 0.1 μm or more depending on the aperture 70
Focus on the following spot system and adjust the ion beam irradiation conditions
Control the beam from the control device 85 with a low energy beam
Power supply for blanking electrode 83 and deflection electrode
Blanking electrode 73 and deflection electrode 7 via power supply 84
5 and 76 to control IC chip or wafer
The observation area of the surface of the base film 18 is set to 0.3 to 0.1 μm.
An ion beam spot with a spot diameter of m or less
Scan-irradiates the surface of the passivation film 18 having a step.
Output from the secondary charged particle detector 86 at each point on the surface
By secondary electrons or secondary ions
The enlarged image of the surface of the step of the
Observed by the Raun tube 88 and obtained from the observed enlarged image
9A based on the step information of the passivation film 18 to be formed.
Range to cut the wiring of 1μm or less as shown in (cutting point)
Set. Then, the in-beam irradiation conditions were
Make the energy 10 KeV or more so that it can be processed
The disconnection of the wiring set by the control signal from the control device 85
In the places to be cut, 0.3 to 0.1 μm or less
Scan irradiation of ion beam spot focused on pot diameter
Then, as shown in FIG. 12a or FIG.
A hole is formed in the film 18, and furthermore, FIG.
Sputter the wiring located under the hole as shown in
And remove and cut. In this case, the scanning width and the wiring width
It is necessary to match the deflection voltage control system.
Higher accuracy can be achieved. FIGS. 9A and 9B show the sputtering method in this case.
The case where the wiring is cut more is shown. In FIG.
IC chip or wafer coated with a base film 18
In the upper Al wiring, a rectangular portion indicated by 12 is cut.
It is assumed that the range is to be removed. At this time, as a SIM image
Based on the observed step position information of the passivation film 18,
As shown in FIG.
Bundle ion beams 200a, 200b, 200d, 200
Scan by the deflection electrodes 75 and 76 in the order of c,.
While irradiating with a focused beam, the passivation film 18 of the irradiated portion is irradiated.
And cutting is performed by removing the wiring of the irradiation part. FIG. 10 shows an embodiment of the present invention.
FIG. 7 is a reference diagram of the ion beam optics in the apparatus of FIG.
This shows a configuration in which the system configuration is changed to an aperture projection system.
It is. That is, the ion emitted from the high-intensity ion source 210
Beam is flattened by electrostatic lenses 201, 202 and 203.
Apertures 204, 205, 206, 2
07. This ion beam optical system is shown in FIG.
With the same configuration as the laser optics
Image on the sample 210 by the lenses 208 and 209
It is to project. Here, 211 indicates the projected image.
You. For example, lenses 208 and 209 are 40 × magnification lenses.
If the size of the
By adjusting the keys 204a, 205a, 206a, and 207a
If a 40μ rectangle is set with an accuracy of ± 2μ, there will be no aberration.
When viewed, a 1μ rectangular ion beam
The image is set with an accuracy of ± 0.05 μ. I
Therefore, high-precision positioning can be easily performed, which is advantageous.
You. In this case, in FIG.
Set the aperture to irradiate the beam
The wiring 11 is cut by irradiating a beam. Using an ion beam optical system as shown in FIG.
As shown in FIG.
When cutting the wiring of an IC without a film
Al wiring 1 by sputtering of ion beam
Only 5 can be removed accurately without damaging the surrounding area,
A cross section as shown in FIG. 11 is obtained. Next, a passivation coat as shown in FIG.
When cutting wiring with
In the processing by the robot, the passivation film on the surface
First, as shown in FIG.
The passivation film 18 is processed to the surface of
The wiring 15 is processed to obtain a cross section as shown in FIG. This
Even in the case of
Scratches, cracks in the passivation film, to the bottom and adjacent parts
No damage is seen. FIG. 13 shows an apparatus according to another embodiment of the present invention.
FIG. Here, the evacuation system and the secondary electron image
The spray, sample exchange room, gantry, etc. are the same as in FIG.
Has been abbreviated. The liquid metal ion source 65 is composed of Al-Si, Au-
It is assumed that the ion source is an alloy ion such as Si. Extraction electrode 66
And is controlled by the control electrode 67.
The emitted ion beam is parallel by the lenses 70, 71, 72
Beam, and a part of it is taken by aperture 101
EXB mass filter (mass separation device) 102
Control of the EXB mass filter 102 when passing through
Adjust electric field E and magnetic field B applied to this by section 115
Only ions of a certain mass go straight and the lower aperture
Pass through the beam 103 and ions of other masses
Is bent and kicked by aperture 103
Can be prevented from reaching below. Ion that went straight
Are focused by focusing lenses 104, 105, and 106.
Through the blanking electrode 73 and the deflection electrodes 75 and 76.
And reaches the sample surface 90. The sample chamber 102 is provided with an exhaust pump from the passage 119.
Exhausted by the pump. The sample chamber 120 contains N_TwoMoth
S, O_TwoGas introduction from gas cylinder 109 such as gas
The chisel 107 is installed, and the cylinder valve is
Controller 117. Also installed in sample chamber 120
Degree of vacuum inside the sample chamber 120 by the measured vacuum gauge 110
Is monitored, and a constant gas concentration is
The valve 108 is controlled so as to be in degrees. In the sample chamber
Is a quadrupole mass spectrometer in addition to the secondary electron detector 86
Has a secondary ion mass spectrometer 111 such as
When ion beam is irradiated to 90
The system for performing the mass analysis of the secondary ion includes one controller 118.
Control of the secondary ion mass spectrometer 111
The signal of the roller 112 enters this. 113 is an ion
In the power supply control unit, the current of the heater 65 of the ion source and the extraction
The voltage of the electrode 66, the voltage of the control electrode 67, etc. are controlled.
Troll. 114 is a power control for the first lens
The controller controls the first lenses 70, 71, 72.
is there. Reference numeral 115 denotes a power control unit, which is an EXB mass filter 10.
The second power supply is controlled. 116 is a power control unit
The power of the second lenses 104, 105, and 106 is controlled.
It is. Reference numeral 118 denotes a control unit, which is an ion source power control unit.
113, power supply control unit 114 for the first lens, EXB mask
Power supply control unit 115 for filter and power supply control unit for second lens
116 etc. are all controlled. In addition, they are omitted in the figure.
Power supply for blanking electrode 73 and deflection electrodes 75 and 76
The control unit is also controlled by the control device 118. FIG. 14A shows the output of the secondary ion mass spectrometer.
It shows. A thin film of Al on Si as shown in FIG.
From the top of the sample with
In this case, the secondary ion current is
First, only Al (solid line) is shown. But the boundary between Al and Si
Becomes closer, Si (dotted line) starts to appear,
This takes place in the world, and when processing continues, Al comes out
It is gone and becomes only Si. In this way, processing
T₁Can be detected. This signal
Is used, only Al is added by the controller 118 of FIG.
Time t₁To stop ion beam irradiation
Control can be performed. According to FIG. 13, as shown in FIG.
After cutting the Al wiring except for the passivation film,
The holes in the membrane can be filled. Sand
The ion source 65 is, for example, an Au-Si alloy ion source.
Au ions by the EXB mass separator 102 using
Only take out and process, and as shown in FIG.
After processing Chillon film and Al wiring, EXB mass separator
Change the electric and magnetic fields applied to the
I will put it out. Also, the valve 108 of the gas cylinder 109 is
Open, O_TwoGas is introduced into the sample chamber 120, and is measured by a vacuum gauge.
Controller 1 measures the pressure and keeps it constant
At 17 the opening and closing of the valve 108 is controlled. The electric power applied to the first lens and the second lens
The pressure is changed by the power supply control units 114 and 116 to change the ion beam.
Is finely collected on the sample part with energy of several KeV to several tens eV.
It is made to enter while being bundled. (When processing
Energy is 10 KeV or more. ) Such low d
In energy, the ion beam adheres to the sample surface and deposits
Is performed. As described above, FIG.
O in the opening of the film 18_TwoSi ion bee in the atmosphere
Irradiation, which causes the SiO 2 to be irradiated as shown in FIG._Twofilm
111 can be deposited. As a gas to be introduced, O_TwoN instead of_TwoUsing
Then, Si_ThreeN_FourFilms can also be deposited. This
Fill the holes in the passivation film above the cuts of Al wiring
The passivation film can be re-coated.
To prevent deterioration of the element and stabilize the electrical characteristics
Can be FIGS. 16a to 16e show the apparatus shown in FIG.
This is a new embodiment. That is, the Al wiring runs in the upper and lower two layers
And the lower layer is cut with an ion beam at the intersection.
Here is how to turn it off. In FIG. 16A, SiO is placed on Si301._Two
Al wiring 302 runs left and right through the insulating film 309 of FIG.
On top of that, SiO_TwoThe Al wiring 304 is formed via the insulating film 303.
Running perpendicular to the paper. In addition, SiO_TwoNo pa
A filtration film 305 is formed. In this case
The method of cutting only the lower Al wiring 309 is described below.
Shown in In the apparatus shown in FIG.
A with an EXB mass separator 102 using a gold ion source
l Only the ion beam is separated and taken out,
Irradiating the sample of FIG.
Obtain a section like b. Next, the EXB mass separator 10
2 by changing the electric field and the magnetic field
Take it out again, and from the gas cylinder 109_TwoTo sample chamber 1
02. Also control the voltage of the lens
Focusing of Si ion beam with energy below several KeV
One sample is irradiated. In this way,
By the method described above, SiO_TwoFilm of the upper Al wiring
Vaporized on the processed part to the lower height and cross section as shown in Fig. 16c
Get. After that, the sample chamber is_TwoTurn off the gas and exhaust
Oxygen-free atmosphere and EXB mass separator 102
To extract only Al and reduce the energy to less than several KeV
16d to obtain an Al deposition layer such as 307 in FIG.
The upper Al wiring is reformed. In the same way as before
SiO on top_TwoA film 308 is deposited to form a passivation layer.
You. Below, at the intersection of the Al wiring, the lower Al wiring
Only cutting could be performed. FIG. 13 shows an EXB using an alloy ion source.
One type of metal is extracted by mass separator
In the absence of a suitable alloy ion source
In such a case, it is necessary to prepare some types of ion sources for switching. Figure
17a is an example of such a device, and FIG.
It shows a cross section. In FIG. 17A, the lens barrel 40
Reference numeral 3 denotes an element such as a lens 413 deflector 414
No. The ion source section is a container 4 for a plurality of different element ion sources.
06a, 406b, 406c,... Are cylindrical rotating bodies 41.
5, a vacuum vessel 4 connected to the lens barrel
16 These ion source containers
Source portions 407a, 407b, 407c,...
8a, 408b, 408c,..., Control electrode 409
a, 409ba, 409,... Heater current,
The extraction voltage, control voltage, etc.
Branch through the introduction terminal 411 which also served as a terminal
Each cable is connected by cables 410a, 410b, 410c,.
Introduced to on-source. 407a in FIG.
Is used in connection with the optical system.
The rotating body 415 is rotated about the axis 405 so that the ion source 40
7b, 407c,... This
The ion source is precisely aligned with the axis of the optical system
Angle reading mechanism, fine adjustment mechanism, and fixing mechanism
But they are omitted in the figure. When this device is used, as shown in FIG.
Not only metal ion species that form a specific alloy, but also any liquid
Body metal ion sources (or other types of ion sources)
Combination can perform the above wiring repair process
Become. In the above embodiment, a liquid metal ion source was used.
As described above, other types of high intensity ion sources, eg
For example, extremely low temperature field ionization source, micro discharge type ion
Sources may be applicable in some cases. [0052] According to the present invention, a wiring width of 1 μm or less can be obtained.
Completion of VLSI, ULSI, etc. with protective film coated on wiring
With conventional laser processing method
Passivation coat on the upper part where difficult processing was difficult
Wiring cutting parts etc. for fine wiring parts that have
Correction processing by local film formation to protect and distribute
Wiring connection between lines can be made, and as a result, defective parts can be analyzed and corrected
Can significantly reduce the development period and development
Effect that can improve the yield at the time
To play.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a configuration diagram showing a conventional laser wire cutting device. 2A is a plan view of an Al wiring portion of an IC showing a method of cutting the Al wiring by the method, and FIG. 2B is a sectional view of the same. FIG. 3 is a plan view showing the influence on the periphery when the Al wiring is cut by a laser. 4A and 4B are cross-sectional views of samples. FIG. 5 is a configuration diagram showing a conventional laser wire cutting device. FIG. 6 is a configuration diagram of a wiring cutting apparatus using an ion beam according to the present invention. FIG. 7 is a diagram showing a liquid metal ion source. FIG. 8 is a diagram showing neutralization of a beam by an electron shower. FIGS. 9A and 9B are front views each showing wiring cutting by scanning with an ion beam. FIG. 10 is a reference view showing a configuration of an ion beam wiring cutting device by a projection method which is not an embodiment of the present invention. FIG. 11 is a cross-sectional view of a sample. 12A and 12B are cross-sectional views of a sample. FIG. 13 is a configuration diagram of an ion beam wiring repair apparatus including the gold ion source and the mass analyzer. 14A is a diagram showing the output of the mass spectrometer, and FIG. 14B is a cross-sectional view of the sample. FIG. 15 is a cross-sectional view of a sample. 16A to 16E are cross-sectional views illustrating a method of cutting a lower wiring. FIG. 17A is a diagram showing a wire cutting device using an ion beam having many ion mirrors, and FIG. 17B is a cross-sectional view thereof. [Explanation of References] 37: Stand, 40: Sample chamber. 41: sample exchange chamber, 55: stage, 65: liquid metal ion source, 85: secondary charged particle detector

   ────────────────────────────────────────────────── ─── Continuation of front page    (72) Inventor Miyauchi Kenko               292 Yoshida-cho, Totsuka-ku, Yokohama-shi, Kanagawa               Hitachi, Ltd., Production Technology Laboratory (72) Inventor Mikio Hongo               292 Yoshida-cho, Totsuka-ku, Yokohama-shi, Kanagawa               Hitachi, Ltd., Production Technology Laboratory

Claims (1)

(57) [Claims] What is claimed is: 1. An apparatus for processing an IC element comprising at least a lens barrel and a sample chamber to form a vacuum chamber, said lens barrel comprising: a high-intensity ion source means for emitting a high-intensity ion beam; Charged particle optical system means for focusing the high-intensity ion beam emitted from the high-intensity ion source means, blanking electrode means for irradiating / stopping the high-intensity ion beam, and the focused high-intensity ion beam. A deflecting electrode means for scanning, wherein the sample chamber is provided with a sample stage means for installing an IC element, and the surface of the IC element is irradiated with an ion beam focused by the charged particle optical system means. 2 generated from the surface of the element
Secondary charged particle detector means for detecting secondary electrons or secondary ions, and the secondary charged particle detector means detected by the secondary charged particle detector means.
A scanning ion microscope means for displaying a SIM image of the surface of the IC element based on secondary electrons or secondary ions; and a valve for opening and closing a gas containing a component of a film formed on the IC element inside the sample chamber. Gas supply means for supplying a pressure from the outside of the processing chamber through a nozzle, monitoring means for monitoring the pressure inside the processing chamber, and pressure based on the pressure inside the processing chamber monitored by the monitoring means. Control means for controlling the on-off valve, wherein the high-intensity ion beam is scanned and irradiated on a desired area of the IC element in a state where gas is introduced from the nozzle by the gas introduction means, thereby irradiating the IC element. A processing device for an IC element, wherein a local film is formed thereon. 2. A sample exchange chamber connected to the sample chamber via a gate valve is provided so that the IC element can be mounted on the sample stage in the sample chamber from the sample exchange chamber via the gate valve. Claim 1
Item 3. A device for processing an IC element according to item 1. 3. A gas containing a component of a film to be formed on the IC element,
Combines with the elements in the high-brightness ion beam to form an insulating film.
Claims, characterized in that a gas formed first
Item 3. A device for processing an IC element according to item 1. 4. An IC device processing apparatus configured to form a vacuum chamber having at least a lens barrel portion and a sample chamber portion,
The lens-barrel unit includes a high-intensity ion source unit having a plurality of ion sources each emitting a high-intensity ion beam of a predetermined ion type, and a specific unit by switching the plurality of ion sources of the high-intensity ion source unit Switching means for extracting a high-intensity ion beam composed of an ion species, charged-particle optical system means for focusing a high-intensity ion beam composed of a specific ion species which is switched and emitted by the switching means, and irradiation with the high-intensity ion beam A blanking electrode means for stopping and a deflecting electrode means for scanning the focused high-intensity ion beam, wherein the sample chamber is provided with a sample stage means for installing an IC element, and the charged particle optical system means Secondary charge for detecting secondary electrons or secondary ions generated from the surface of the IC element by irradiating the surface of the IC element with the ion beam focused by Child detector means, scanning ion microscope means for displaying a SIM image of the surface of the IC element based on the secondary electrons or secondary ions detected by the secondary charged particle detector means, and the sample chamber section The IC inside
Gas supply means for supplying a gas containing a component of a film formed on an element from the outside of the processing chamber through a nozzle via an on-off valve, monitoring means for monitoring the pressure inside the processing chamber, and the monitor Control means for controlling the on-off valve based on the internal pressure of the processing chamber monitored by the means, wherein the high-intensity ion beam is supplied to the IC element while the gas is introduced from the nozzle by the gas introduction means. A local region formed on the IC element by scanning and irradiating a desired area of the IC element.