JP2810370B2 - Focused ion beam processing method - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a method for precisely and finely drilling an LSI or the like, and particularly to real-time measurement of the depth, bottom shape, and cross-sectional structure of the drilled hole. The present invention relates to a focused ion beam processing method suitable for monitoring.

[Conventional technology]

Until now, the cross-sectional structure at a specific position such as an LSI has been observed by an SEM (Scanning Electron Microscope) image. After the skilled worker repeats polishing of the sample and observation of the sample with a microscope until a desired cross section appears, the cross section is observed by an SEM image.

On the other hand, in the case of Japanese Patent Application Laid-Open No. 58-164135, it can be rotated and moved by a focused ion beam generating means as a processing means, an electron beam generating means as an observation means, and a photomultiplier tube for secondary electron detection. After processing the sample placed on the stage and processing of the predetermined pattern is completed, the sample stage is moved so that the sample stage is at a desired angle and position with respect to the electron beam, and the sample is irradiated by the electron beam. 2
A secondary electron image is to be observed.

[Problems to be solved by the invention]

However, until now, no consideration has been given to observing a change in the processed shape of the sample by irradiating the sample with an electron beam without moving the sample during the processing by the focused ion beam. There is a problem that the in-process measurement of the processing depth or the processed layer cannot be quickly determined.

In addition, in the case of the above publication, when Si or SiO ₂ , which is a material often used for LSI, is sputter-etched by an ion beam in addition to the disadvantages, some of the particles sputtered from the bottom of the processing hole adhere to the side wall of the processing hole ( (Reattachment phenomenon), and the cross-sectional structure of the LSI, which should appear on the side surface, cannot be observed well. Furthermore, when a good cross section suitable for observation is obtained by polishing, a long time is required for observation in combination with a shortage of skilled workers.

An object of the present invention is to provide an SEM image of a processed hole without moving a sample or a workpiece even if the sample or the workpiece is being processed by a focused ion beam, and furthermore, a SIM (Scanning Ion Microscope). It is an object of the present invention to provide a focused ion beam processing method capable of monitoring an in-process depth of processing and observing a bottom shape of a processed hole by obtaining an image.

[Means for solving the problem]

The above object is to process the processing area by irradiating a focused ion beam on a processing area of a processing object placed on a stage which is movable in a vacuum atmosphere and is positioned for processing or observation, and scans the processing area. Stopping the irradiation of the focused ion beam to stop the processing of the processing target area, and stopping the irradiation of the focused ion beam with respect to the irradiation direction of the focused ion beam to the surface of the processing target area in a state where the irradiation of the focused ion beam is stopped. An observation area composed of the processing area and its neighboring area is irradiated and scanned with a focused electron beam narrower than the processing area from a different direction, and secondary electrons generated from the observation area by the irradiation scanning of the focused electron beam. And displaying an SEM image of the observation area.

Further, the processing area is processed by irradiating a focused ion beam onto a processing area of a processing object placed on a stage that is movable in a vacuum atmosphere and positioned for processing or observation, and processing the processing area. In the course of processing, the irradiation of the focused ion beam is stopped, and in the stopped state, the focused electrons narrowed down from the processing target area from a direction different from the irradiation direction of the focused ion beam to the surface of the processing target area. The beam is irradiated and scanned on an observation region consisting of the processed region and its vicinity, and secondary electrons generated from the observation region are detected by irradiation scan of the focused electron beam, and an SEM image of the observation region is displayed. This is achieved by irradiating the focused ion beam again onto the processing target area based on the displayed SEM image to perform processing.

Further, the processing area is processed by irradiating a focused ion beam on a processing area of a processing object mounted on a stage that is movable in a vacuum atmosphere and is positioned for processing or observation; Secondary charged particles generated from the processing area by the irradiation scanning of the focused ion beam were detected, a SIM image of the processing area was displayed, and irradiation of the processing area with the focused ion beam was stopped. In the state, a focused electron beam narrowed down from the processing area to a processing area and a region near the scanning area is irradiated with a focused electron beam narrowed from a direction different from the irradiation direction of the focused ion beam to the surface of the processing area. This is achieved by detecting secondary electrons generated from the observation region by irradiation of the focused electron beam and displaying an SEM image of the observation region.

Furthermore, there is provided a method of processing a processing area of a processing object mounted on a stage movable for processing or observation in a vacuum atmosphere using a focused ion beam, wherein the processing is performed by using a focused ion beam. A step of irradiating a focused ion beam onto a processing area to process the processing area; a step of irradiating the processing area with an electron shower; and a processing area processed by the focused ion beam irradiation scanning and the processing thereof. Irradiating and scanning the surface of the observation region consisting of the neighboring region with a focused electron beam narrower than the processing region from a direction different from the irradiation direction of the focused ion beam to the surface of the processing region; Detecting secondary electrons generated from the observation region by irradiation scanning of the focused electron beam, and displaying an SEM image of the observation region.

[Action]

Under the control of the beam scanning switching control means, the focused ion beam from the focused ion beam generating means and the electron beam from the electron beam generating means alternately irradiate and scan the sample or the workpiece, It is intended to monitor a processing state while processing a workpiece. During processing by the focused ion beam, a SIM image is detected depending on the secondary charged particles (for example, secondary electrons) detected by the secondary charged particle detecting means, and a secondary charged particle is irradiated and scanned by the electron beam. Depending on the secondary electrons detected by the particle detection means, SEM images are displayed on the monitor. Depending on the relative positional relationship between these images and the display magnification, the processing at the time of processing may be possible. The state is immediately known. Also, when gas is blown into the processing area to gasify the sputtered particles, it is possible to prevent the sputtered particles from adhering to the side surface of the processing hole, and therefore, a good SEM image can be obtained from the side surface, so that the cross-sectional structure can be improved. Can be satisfactorily grasped.

〔Example〕

 Hereinafter, the present invention will be described with reference to FIGS. 1 to 21.

First, a focused ion beam processing apparatus according to the present invention will be described. FIG. 1 shows an example of the configuration. As shown, the main chamber 1 is provided with a load lock chamber 3 via a gate valve 2. The main chamber 1 is evacuated by a vacuum pump via a valve 4, and the load lock chamber 3 is also operated by a vacuum pump to open a valve 5. It has been exhausted through.

The main chamber 1 is basically provided with an ion beam column 10, an electron beam column 11, a secondary electron detector 12, and a sample stage 13. Among them, the ion beam column 10 is provided with a liquid metal ion source 14, an electrostatic lens system 15 for focusing an ion beam, a blanking electrode 16, a blanking aperture 17, and a deflection control electrode 18. The required voltage is externally applied. The electron beam column 11 is similar to that used in a normal scanning electron microscope (SEM), and is focused on a sample 19 by a lens system, a blanking electrode, a deflection control electrode, and the like. In the sample
19 is scanned by the electron beam 21 but the ion beam
The electron beam 21 is blanked during the irradiation of 20.

By the way, in the vicinity of the irradiation point of the ion beam 20 on the sample 19 placed on the sample stage 13, the electron beam 21 needs to be irradiated with the beam axis direction different from that of the ion beam 20, For this reason, the electron beam column 11 is attached to the main chamber 1 so that the position of the electron beam axis is adjustable.

FIG. 2 shows an example of a method of attaching an electron beam column for coarsely adjusting the position of the electron beam axis. A bellows-equipped flange 32 to which the electron beam column 11 is attached is slidably attached on the flange 31 surface to a flange 31 attached on the chamber outer wall 30. The two micrometer heads 33 mounted orthogonal to each other on the upper surface of the flange 31 allow the axial position of the electron beam column 11 to be adjusted without breaking vacuum. The fine adjustment of the electron beam irradiation position is performed, for example, by irradiating one point on a sample without scanning with an ion beam to perform spot processing, and then scanning the sample with an electron beam to obtain a SEM image. The electron beam deflection voltage may be finely adjusted so that the spot processing hole is located at the center of the image.

Now, as shown in FIG. 3, the electron beam column 11 is set so that the electron beam 21 has a certain angle θ with respect to the ion beam 20. The side wall 41 is set to be irradiated with the electron beam 21. The electron beam 21 is, as shown,
By scanning the hole 40 and its periphery with a wide width b so as to include the opening of the hole 40, processing state information including side wall shape information of the hole 40 can be obtained as an SEM image. The secondary electron detector 12 for obtaining this SEM image is installed so as to capture the secondary electrons 42 generated from the side wall 41 of the hole 40. This is because as shown in FIG. Is suggested to be provided on the side of the side of the hole 40 being processed by the ion beam, where the electron beam irradiation surface is directly viewed.
Eventually, the secondary electron detector 12 is installed on the electron beam column 11 side. However, as shown in FIG. 5, when the secondary electron detector 12 has to be placed at a position where the side wall of the machined hole is not directly seen, the secondary electron detector 12 is required.
By providing an electrode 43 having a positive potential on the front surface of the substrate, secondary electrons from the side wall may be captured. The secondary electrons captured by the secondary electron detector 12 as described above are to be displayed as an SEM image on the monitor 57 by the image controller 56. When the sample 19 is irradiated with the ion beam 20 by blanking the electron beam 21 in the image controller 56, the secondary electrons generated by the ion beam 20 are captured by the secondary electron detector 12, and the SI
An M image can be displayed on the monitor 57. In addition,
The sample stage 13 moves between the load lock chamber 3 and the main chamber 1 while holding the sample 19, and is movable in the x and y directions to determine a processing position on the sample 19. Desirably, it would be advantageous if it could be further rotated about the Z axis (ion beam axis), X axis, and Y axis.

A description will be given of a control device 58 for obtaining hole shape and depth information while performing hole processing with an ion beam using the apparatus having the above-described configuration. FIG. 5 shows an example of an observation area 51 to be scanned. FIG. 7 shows an example of beam scanning control in the case of observing the processing shape with an electron beam every time the region 50 is scanned one surface by an ion beam. Although the scanning of the beam in the x-axis direction is not shown in FIG. 7 because it is obvious, the electron beam is blanked while the ion beam scans once in the y-direction. . When the scanning of the ion beam is completed, the blanking of the electron beam is released and the scanning in the y direction by the electron beam is performed. During this time, the ion beam is blanked.

The switching timing between the ion beam and the electron beam described above is desirably changed in various ways depending on the processing conditions by the ion beam. For example, the ion beam is scanned at a very high speed, and only a small amount of processing is performed during the scanning of the processing area. In the case of processing under the condition, observation by an electron beam may be performed every time the processing area 50 is scanned a plurality of times by an ion beam. Conversely, as will be described later, when processing is performed with an extremely slow scan, the amount processed at one time is large.
Each time scanning is performed once or several times in the axial direction, the observation region 51 may be scanned once by the electron beam. If the scanning of the ion beam is further slow, the x
Scanning by an electron beam may be performed each time scanning in the axial direction proceeds a little. The ion beam blanking controller 53, the ion beam scanning controller 52, the electron beam blanking controller 55, and the electron beam scanning controller 54 shown in FIG. Scan control and blanking control are performed. Note that the beam scan control is not limited to the analog scan using the sawtooth wave shown in FIG. 7, but the same applies to the digital scan in which the irradiation position coordinates are sequentially specified and the beam is moved. Scanning is possible.

By the way, when the surface of the sample 19 is covered with an insulator like a semiconductor LSI, charge-up occurs by processing with the ion beam 20, but in such a case, the sample 19 is charged.
Of the sample 19 to neutralize the positive charge on the surface of the sample 19. For this reason, as shown in FIG.
60 is provided in the main chamber 1. Since the electrons generated from this will be noise for SEM image observation, when using the electron shower gun 60, a blanking controller
59 allows the electronic shower to be blanked at the same timing as the ion beam blanking signal shown in FIG.

When processing the sample 19 with the ion beam 20 and observing the processing hole shape with the electron beam 21 using the apparatus having the above configuration, the SEM images as shown in FIGS. 8 (a), (b) and (c) are sequentially obtained. Since the magnification M of the SEM image and the angle θ of the electron beam 21 with respect to the ion beam 20 are known in advance, the depth D of the hole 40 is determined as shown in FIG. Will be required.

D = H / sinθ = Y / (Msinθ) (1) However, it is assumed that the inclination of the side wall 41 is sufficiently small and substantially parallel to the ion beam 20.

Therefore, since the actual processing depth can be known by measuring the depth Y on the screen from the SEM image, the processing depth can be obtained with high accuracy.

If the ion beam 20 has a small amount of reattachment to the side wall of the sputtered material, the side wall as shown in FIG.
41 is substantially parallel to the ion beam 20. However, when the ion beam 20 is thick, the beam current distribution becomes longer, and the side wall 41 becomes loose. Regardless of the ion beam diameter, depending on the processing conditions, the processing target, and the processing depth, the inclination of the side wall may increase if the sputtered material from the bottom of the processing hole is re-adhered to the side wall. Even in such a case, according to the equation (1), an error occurs in the processing depth D. In order to improve this point, in the processing apparatus shown in FIG. 9, two monitors 57 and 57 'are accommodated in the image controller 56. Monitor 57 is ion beam 20
And a monitor 57 'is provided for displaying an SEM image by the electron beam 21. Accordingly, an image of the processing hole viewed from obliquely above is displayed on the monitor 57 ', and an image of the processing hole viewed from directly above is displayed on the monitor 57. Specifically, as shown in FIG.
Indicates that the side wall 41 is a truncated pyramid with a slope α
57 ′ has an SEM image 60 ′ of the machined hole 40 viewed from the angle θ direction,
The monitor 57 displays a SIM image 60 of the processing hole 40 as viewed from directly above. Therefore, if these two images are used, it is possible to correctly obtain the depth D of the machined hole 40 even when the inclination α of the side wall 41 is large due to a geometric relationship.

That is, assuming that H = Dtanα and H ′ = Dsin (α + θ) / cosα, if H / H ′ = sinα / sin (α + θ) = K, tanα becomes tan
Since D is expressed as α = K sin θ / (1−K cos θ), D is obtained as follows.

D = H / tanα = (1−Kcosθ) / (Ksinθ) (2) As described above, the depth of the processed hole is obtained from H, H ′ obtained from the two images 60 and 60 ′ and the inclination angle θ of the electron beam. D is obtained by equation (2), and this calculation is performed as shown in FIG.
A function for displaying a cursor on each of the display screens 60, 60 'corresponding to the respective 57, 57' is provided, and the coordinates Y ₁ at which the cursor is set are set.
After reading Y ₄ and dividing H 4 and H ′ by dividing the image by the image magnifications M ₁ and M ₂ , the machining depth D is automatically determined by the software function that realizes the equation (2). It is something that can be done. Note that two monitors are not necessarily required, and a mechanism 62 for switching between an ion beam scan signal and an electron beam scan signal is provided in the image controller 56 as shown in FIG. The SIM image may be switched and displayed. In addition, one display screen is divided and SEM
The image and the SIM image may be displayed simultaneously. Also, SEM image and SIM
The magnification of the images does not necessarily have to be the same, and according to the calculation formula shown in FIG. 11 according to each magnification, if the dimensions Y ₁ to Y ₄ read from the display screen are divided by the respective magnifications M ₁ and M _2. Good.

By the way, when the ion beam 20 having a large diameter is used at the time of processing, not only the resolution of the SIM image deteriorates, but also the charge-up occurs due to the large ion beam flow. In such a case, FIG. As shown in the figure, processing with the ion beam 20 having a large diameter is performed, and an electron shower 65 is applied as needed, and if necessary, during this processing, as shown in FIGS. 13 (b) and 13 (c). By switching the diameter from large to small, ion beam processing is performed without applying an electron shower 65 to obtain a high-resolution SIM image, and when the ion beam 20 is blanked, the electron beam 21 is scanned to scan the SEM image. Measures such as obtaining Switching of the ion beam diameter is performed as necessary. A beam diameter switching mechanism is known, for example,
As shown in FIG. 14, a movable plate 66 having two holes having different systems is provided in the middle of the ion optical system 15, and the movable plate 66 is predetermined by an actuator 68 from outside the vacuum through a vacuum feedthrough 67. It is known to limit the diameter of an ion beam by moving it to a position. In this case, as shown in FIGS. 15 (a) and 15 (b), there is a possibility that the two holes 69 and 70 as apertures have different shifts with respect to the ion beam axis 71. With the switching, the focal point and the irradiation position of the ion beam are shifted from the desired position. On the other hand, as shown in FIG. 16, the optimal lens voltage according to each beam diameter and the shift voltage for correcting the beam irradiation position shift are stored in advance, and when the beam diameter is switched, The controller may select the required voltage and apply it to the beam optical system.

FIG. 17 shows the configuration of a processing apparatus for obtaining two types of SEM images, in which two electron beam columns 11, 11 'are provided in different axial directions for SEM observation. It has become something. The same observation surface can be irradiated with an electron beam from any one of the electron beam columns 11 and 11 ', and the secondary electron detector 12
Is provided so as to receive secondary electrons from the surface to be observed. Therefore, approximately two electron beam columns 11, 11 'and one secondary electron detector 12 are arranged on the same side of the processing hole. The electron beam column is provided in this way even if the resolution of the SIM image is not good and the depth accuracy of the drilled hole cannot be obtained with good accuracy, the depth of the drilled hole can be determined with two types of SEM. This is because it is possible to obtain a good result.

Finally, the case of observing a cross-sectional layer of an LSI or the like will be described. When drilling holes with an ion beam, FIG.
As shown in (1), when the speed of the feed 80 is high, particles are sputtered from the center of the beam in all directions, and the sputtered particles adhere to the side wall 41 again. Therefore, observation of the sample cross section from the side wall 41 is hindered by the reattachment. However, when the speed of the feed 80 of the ion beam 20 is low as shown in FIG. 18 (b), the sputtered particles are scattered in the opposite direction to the feed. Therefore, as shown in FIG. 19, at the end of each feed, the next feed start position is slightly moved closer to the feed end position side, and when the slow feed is repeated a plurality of times, the shape as shown in the drawing is used. It is already known that a hole is machined. In the illustrated example, the left side wall 41 has a surface suitable for cross-sectional observation with little reattachment of sputtered particles. Therefore, as shown in FIG. 20, when observing a cross section of the sample 19 at a position along the arrow 82, a position separated by a length 83 is set as an initial feed start position, and every time the slow feed ends, The electron beam 21 may be applied to the side wall 41 from obliquely above to obtain an SEM image.

On the other hand, as shown in FIG. 1 and the like, a gas spray nozzle 90 may be provided in the main chamber 1. At this time, the ion beam column 10 is extended to the main chamber 1 by the orifice 91 to protect the ion source 14 and the ion optical system 15 from gas.
The inside of 10 is differentially evacuated by a vacuum pump.

As shown in FIG. 21, in the processing by the ion beam 20, a gas 9 containing fluorine such as SF ₆ or XeF is used for the SiO ₂ processing.
2 and, for Al processing, a gas containing chlorine such as Cl ₂ or BCl ₃ is blown from the gas blowing nozzle 90.
The sputtered particles are changed into gases 93 such as silicon fluoride and aluminum chloride by a chemical reaction.
Therefore, reattachment of sputtered particles to the side wall 41 hardly occurs, and a good cross section can be secured. SiO ₂ and Al
For a sample such as an LSI having such a layer structure, a gas suitable for the material being processed may be selected and sprayed, or a mixed gas may be sprayed.

Although the present invention has been described above, a secondary electron detector is used as a secondary charged particle detector.
It may be a secondary ion detector or a detector that detects X-rays, fluorescence, and the like generated by primary ions and primary electrons. Although a liquid metal ion source is used as the ion source, it may be a gas phase ion source or a plasma ion source.

〔The invention's effect〕

As described above, according to the present invention, even if a sample or a workpiece is being processed by a focused ion beam,
Since an SEM image of a machined hole can be obtained without moving a sample or a workpiece, there is an effect that a machining depth monitor in an ion process and observation of a machined hole bottom shape can be quickly performed.

[Brief description of the drawings]

FIG. 1 is a view showing a configuration of an example of a focused ion beam processing apparatus according to the present invention, and FIG. 2 is a view showing a method of mounting an electron beam barrel having an adjustable axial position to a main chamber. , FIG. 3 is a diagram showing a relationship between an electron beam axis and an ion beam axis, FIG. 4 is a diagram showing how to install a secondary electron detector, and FIG. 5 is another installation of a secondary electron detector. FIG. 6 is a diagram showing an aspect, FIG. 6 is a diagram showing a relationship between a scan area by an ion beam and that by an electron beam, FIG. 7 is a diagram showing an example of scan control for an ion beam and an electron beam, and FIG. ) To (d) are views showing a method for obtaining a processing depth from an SEM image, FIG. 9 is a view showing a configuration of a focused ion beam processing apparatus according to the present invention in another example, and FIG. Is a diagram showing a method for obtaining the processing depth from the SEM image and the SIM image, FIG. FIG. 12 is a diagram showing a method for automatically obtaining a machining depth in that case, FIG. 12 is a diagram showing a method for switching and displaying an SEM image and a SIM image on one monitor,
13 (a) to 13 (c) are views for explaining an ion beam irradiation method when the ion beam diameter is large, FIG. 14 is a view showing a diameter switching mechanism of the ion beam, and FIG. (A) and (b) are diagrams for explaining that a shift occurs between the center of the aperture and the ion beam axis when the diameter of the ion beam is switched, and FIG. 16 is a diagram illustrating a shift in the focus and irradiation position of the ion beam. A diagram for explaining the correction method, FIG.
FIGS. 18 (a) and 18 (b) are diagrams showing the configuration of a focused ion beam processing apparatus according to the present invention in another example, and FIGS. 18 (a) and 18 (b) are diagrams for explaining the sputter direction of particles due to the difference in ion beam feed speed. FIG. 19 is a diagram showing a hole machining shape when the feed speed of the ion beam is low, FIG. 20 is a diagram for explaining a machining method when observing a cross section, and FIG. It is a figure for explaining gasification of particles by gas. DESCRIPTION OF SYMBOLS 1 ... Main chamber, 3 ... Load lock chamber,
10 ... Ion beam column, 11,11 '... Electron beam column, 12 ... Secondary electron detector, 13 ... Sample stage,
53, 55, 59 ... Blanking controller, 52, 54 ... Scan controller, 56 ... Image controller, 57, 57 '... Monitor, 6
0 ... Electronic shower gun, 90 ... Gas spray nozzle.

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Akira Shimase 292 Yoshida-cho, Totsuka-ku, Yokohama-shi, Kanagawa Prefecture Inside of Hitachi, Ltd. (56) References JP-A-58-164135 (JP, A) JP-A-61-248346 (JP, A) JP-A-59-208830 (JP, A) JP-A-1-180791 (JP, A)

Claims (9)

(57) [Claims] 1. A processing area of a workpiece mounted on a stage movable for processing or observation in a vacuum atmosphere is irradiated with a focused ion beam and scanned to process the processing area. Then, the irradiation of the focused ion beam is stopped to stop the processing of the processing target region, and the irradiation direction of the focused ion beam with respect to the surface of the processing target region in a state where the irradiation of the focused ion beam is stopped. A focused electron beam narrowed down from the processing region from a different direction is irradiated and scanned on an observation region composed of the processing region and a region in the vicinity thereof, and a secondary beam generated from the observation region by the irradiation scanning of the focused electron beam. A focused ion beam processing method comprising detecting electrons and displaying an SEM image of the observation region. 2. A process for irradiating a focused ion beam onto a work area of a work placed on a stage which is movable in a vacuum atmosphere and is positioned for processing or observation, thereby processing the work area. Then, the irradiation of the focused ion beam is stopped during the processing, and in the stopped state, the focused ion beam is narrowed down from the direction different from the irradiation direction of the focused ion beam to the surface of the processed area. The focused electron beam is irradiated and scanned on the observation region composed of the processed region and the region in the vicinity thereof, and secondary electrons generated from the observation region are detected and scanned by the focused electron beam irradiation scan, and the SEM image of the observation region is detected. And processing is performed by irradiating the focused ion beam onto the processing area again based on the displayed SEM image to perform processing. 3. A processing area of a workpiece mounted on a stage which is movable in a vacuum atmosphere and is positioned for processing or observation is irradiated with a focused ion beam and scanned to process the processing area. Then, secondary charged particles generated from the processing area are detected by the irradiation scanning of the focused ion beam, a SIM image of the processing area is displayed, and irradiation of the processing area with the focused ion beam is stopped. In a state where the focused ion beam is irradiated on the surface of the processed region in a different direction with respect to the irradiation direction of the focused ion beam, the focused electron beam is narrowed down from the processed region to an observation region including the processed region and a neighboring region. A focused ion beam processing method, comprising: irradiating and scanning, detecting secondary electrons generated from the observation region by irradiation of the focused electron beam, and displaying an SEM image of the observation region. . 4. During the irradiation scan of the focused ion beam,
The focused electron beam is placed in a blanking state, and the focused ion beam is placed in a blanking state during scanning while irradiating the focused electron beam.
The focused ion beam processing method according to any one of the above. 5. The focused ion beam processing method according to claim 1, wherein the focused ion beam is irradiated and scanned on an area to be processed in an atmosphere of an etching gas. 6. A method for processing a processing area of a processing object mounted on a stage movable for processing or observation in a vacuum atmosphere using a focused ion beam, the method comprising: A step of irradiating the processed area with a focused ion beam to scan the processed area; a step of irradiating the processed area with an electron shower; and a processing area processed by the focused ion beam irradiation scan. A step of irradiating the surface of the observation region consisting of the vicinity region with a focused electron beam narrower than the processed region from a direction different from the irradiation direction of the focused ion beam to the surface of the processed region, Detecting secondary electrons generated from the observation region by irradiation scanning of the focused electron beam and displaying an SEM image of the observation region. Nbimu processing method. 7. The step of irradiating the area to be processed with an electron shower during the step of irradiating the area to be processed with a focused ion beam for scanning and processing the area to be processed. The focused ion beam processing method described in the above. 8. The focused ion beam according to claim 6, wherein the step of irradiating and scanning the focused electron beam is performed in a state where the scanning of the focused ion beam and the irradiation of the electron shower are stopped. Processing method. 9. The focused ion beam processing method according to claim 6, wherein the focused ion beam is irradiated and scanned on the region to be processed in an atmosphere of an etching gas.