[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

JP2806166B2 - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JP2806166B2
JP2806166B2 JP4233207A JP23320792A JP2806166B2 JP 2806166 B2 JP2806166 B2 JP 2806166B2 JP 4233207 A JP4233207 A JP 4233207A JP 23320792 A JP23320792 A JP 23320792A JP 2806166 B2 JP2806166 B2 JP 2806166B2
Authority
JP
Japan
Prior art keywords
power supply
wiring
integrated circuit
semiconductor integrated
clock signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP4233207A
Other languages
Japanese (ja)
Other versions
JPH0683473A (en
Inventor
斉 石栗
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP4233207A priority Critical patent/JP2806166B2/en
Publication of JPH0683473A publication Critical patent/JPH0683473A/en
Application granted granted Critical
Publication of JP2806166B2 publication Critical patent/JP2806166B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は、半導体集積回路に関
し、特に、クロック信号配線に関する。
The present invention relates to a semiconductor integrated circuit, and more particularly, to a clock signal wiring.

【0002】[0002]

【従来の技術】従来の半導体集積回路では、図2に示す
ように、クロックドライバ9から、そのクロック信号専
用の配線を用いてそれぞれクロック信号の必要な内部回
路ブロック6にクロック信号を供給していた。また、近
年の半導体集積回路のプロセス微細化に伴うアルミニウ
ム配線遅延の増大によるクロックスキュー問題への対策
として、図3に示すように、クロック信号配線をH形ツ
リー状に形成することにより、クロックドライバ9から
それぞれの内部回路ブロック6までの配線長をほぼ同じ
にすることができ、クロックスキューを小さくしてい
る。
2. Description of the Related Art In a conventional semiconductor integrated circuit, as shown in FIG. 2, a clock signal is supplied from a clock driver 9 to an internal circuit block 6 which requires a clock signal by using a wiring dedicated to the clock signal. Was. As a countermeasure against a clock skew problem caused by an increase in aluminum wiring delay due to recent miniaturization of a semiconductor integrated circuit, a clock driver is formed by forming clock signal wiring in an H-shaped tree as shown in FIG. The wiring lengths from 9 to each internal circuit block 6 can be made substantially the same, thereby reducing clock skew.

【0003】[0003]

【発明が解決しようとする課題】前述した従来の半導体
集積回路の第1の例では、クロックドライバから内部回
路ブロックまでの配線長がそれぞれ異なるため、特にア
ルミニウム配線の微細化により配線遅延の影響でクロッ
クスキューが大きくなり、最悪の場合回路が誤動作を起
こしてしまうという欠点がある。
In the above-described first example of the conventional semiconductor integrated circuit, the wiring lengths from the clock driver to the internal circuit block are different from each other. There is a disadvantage that the clock skew increases and in the worst case, the circuit malfunctions.

【0004】上記の欠点を補うために、クロック信号を
伝搬する配線を配線遅延が小さくなるように太くしてク
ロックスキューを小さくするという方法があるが、この
方法では近年の半導体集積回路の高集積化に反し、かな
り大きな配線領域を要する。また、クロックスキュー対
策をほどこした従来の半導体集積回路の第2の例では広
い配線領域を必要とし、さらに、チップ上にマクロが配
置されるスタンダードセルでは、この方式を用いること
ができないという欠点がある。
In order to compensate for the above drawback, there is a method of reducing the clock skew by increasing the width of the wiring for transmitting the clock signal so as to reduce the wiring delay. In contrast to this, a considerably large wiring area is required. Further, the second example of the conventional semiconductor integrated circuit which takes measures against clock skew requires a wide wiring area, and furthermore, this method cannot be used in a standard cell in which macros are arranged on a chip. is there.

【0005】[0005]

【課題を解決するための手段】本発明の半導体集積回路
は、半導体基板上に設けて直流電圧とクロック信号を合
成した合成信号を供給する主電源配線と、前記主電源配
線に接続して前記合成信号より直流電圧を分離し内部電
源配線に供給する低域フィルタと、前記主電源配線に接
続して前記合成信号よりクロック信号を分離し、内部回
路ブロックに供給するコンパレータとを有する。
A semiconductor integrated circuit according to the present invention includes a main power supply line provided on a semiconductor substrate for supplying a combined signal obtained by combining a DC voltage and a clock signal, and a main power supply line connected to the main power supply line. A low-pass filter that separates a DC voltage from the synthesized signal and supplies it to an internal power supply wiring; and a comparator that is connected to the main power supply wiring and separates a clock signal from the synthesized signal and supplies it to an internal circuit block.

【0006】[0006]

【実施例】次に、本発明について図面を参照して説明す
る。
Next, the present invention will be described with reference to the drawings.

【0007】図1は本発明の一実施例を説明するための
模式図である。
FIG. 1 is a schematic diagram for explaining an embodiment of the present invention.

【0008】図1に示すように、半導体チップ10上に
設けて直流電圧VDDとクロック信号8を合成した合成信
号を供給する主電源配線2と、主電源配線2に接続して
合成信号より直流電圧を分離し内部電源配線3に供給す
る低域フィルタ5と、主電源配線2に接続して合成信号
よりクロック信号を分離して整形し内部回路ブロック6
に供給するコンパレータ4とを備えて構成される。
As shown in FIG. 1, a main power supply line 2 is provided on a semiconductor chip 10 for supplying a combined signal obtained by combining a DC voltage V DD and a clock signal 8. A low-pass filter 5 that separates a DC voltage and supplies it to an internal power supply wiring 3; and an internal circuit block 6 that is connected to the main power supply wiring 2 to separate and shape a clock signal from a synthesized signal.
And a comparator 4 that supplies the data to the comparator 4.

【0009】ここで、合成信号は直流電圧VDD=5Vに
トランジスタのしきい値電圧等を考慮して±0.5Vの
振幅を有するクロック周波数のクロック正弦波8を重畳
しており、クロック信号を供給する内部回路ブロック6
の配置により、信号配線の長さが短くなるようにコンパ
レータ4の配置を選択する。
Here, the composite signal is obtained by superimposing a clock sine wave 8 having a clock frequency having an amplitude of ± 0.5 V on the DC voltage V DD = 5 V in consideration of the threshold voltage of the transistor and the like. Circuit block 6 that supplies
, The arrangement of the comparator 4 is selected so that the length of the signal wiring is shortened.

【0010】[0010]

【発明の効果】以上、説明したように本発明は、クロッ
ク信号を主電源配線に乗せることにより、信号配線より
太い電源配線を使用して配線抵抗を小さくすることがで
きるので配線遅延によるクロックスキューを低減できる
という効果を有する。
As described above, according to the present invention, the clock skew caused by the wiring delay can be reduced by placing the clock signal on the main power supply wiring to reduce the wiring resistance by using a power supply wiring thicker than the signal wiring. Can be reduced.

【0011】また、クロック周波数波をディジタルクロ
ック信号に整形するコンパレータを多く用いたり、その
配置を効果的に取ることにより、クロックスキューをか
なり小さくコントロールできるという効果を有する。
Further, by using many comparators for shaping a clock frequency wave into a digital clock signal or by effectively arranging the comparators, the clock skew can be controlled to be considerably small.

【0012】また、クロック信号供給のための専用配線
が不要となるので集積度を向上できるという効果を有す
る。
In addition, since a dedicated wiring for supplying a clock signal is not required, there is an effect that the degree of integration can be improved.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の一実施例を説明するための模式図。FIG. 1 is a schematic diagram for explaining an embodiment of the present invention.

【図2】従来の半導体集積回路の第1の例を説明するた
めの模式図。
FIG. 2 is a schematic diagram for explaining a first example of a conventional semiconductor integrated circuit.

【図3】従来の半導体集積回路の第2の例を説明するた
めの模式図。
FIG. 3 is a schematic diagram for explaining a second example of a conventional semiconductor integrated circuit.

【符号の説明】[Explanation of symbols]

2 主電源配線 3 内部電源配線 4 コンパレータ 5 低域フィルタ 6 内部回路ブロック 8 クロック正弦波 9 クロックドライバ 10 半導体チップ 2 Main power supply wiring 3 Internal power supply wiring 4 Comparator 5 Low-pass filter 6 Internal circuit block 8 Clock sine wave 9 Clock driver 10 Semiconductor chip

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 半導体基板上に設けて直流電圧とクロッ
ク信号を合成した合成信号を供給する主電源配線と、前
記主電源配線に接続して前記合成信号より直流電圧を分
離し内部電源配線に供給する低域フィルタと、前記主電
源配線に接続して前記合成信号よりクロック信号を分離
し内部回路ブロックに供給するコンパレータとを有する
ことを特徴とする半導体集積回路。
A main power supply line provided on a semiconductor substrate for supplying a combined signal obtained by combining a DC voltage and a clock signal; and a DC voltage separated from the combined signal connected to the main power supply line and connected to an internal power supply line. A semiconductor integrated circuit comprising: a low-pass filter to be supplied; and a comparator connected to the main power supply line, separating a clock signal from the synthesized signal and supplying the separated clock signal to an internal circuit block.
JP4233207A 1992-09-01 1992-09-01 Semiconductor integrated circuit Expired - Lifetime JP2806166B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4233207A JP2806166B2 (en) 1992-09-01 1992-09-01 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4233207A JP2806166B2 (en) 1992-09-01 1992-09-01 Semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
JPH0683473A JPH0683473A (en) 1994-03-25
JP2806166B2 true JP2806166B2 (en) 1998-09-30

Family

ID=16951439

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4233207A Expired - Lifetime JP2806166B2 (en) 1992-09-01 1992-09-01 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JP2806166B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7679416B2 (en) * 2004-05-24 2010-03-16 The Regents Of The University Of California High speed clock distribution transmission line network
JP6324189B2 (en) * 2014-04-24 2018-05-16 ローム株式会社 Semiconductor device

Also Published As

Publication number Publication date
JPH0683473A (en) 1994-03-25

Similar Documents

Publication Publication Date Title
US20020074162A1 (en) Substrate layout method and structure for reducing cross talk of adjacent signals
US6452442B1 (en) Apparatus for obtaining noise immunity in electrical circuits
JP2004015032A (en) Integrated circuit device integrated circuit device
JP2806166B2 (en) Semiconductor integrated circuit
JP4327699B2 (en) Multichip package and IC chip
US6864670B2 (en) Method for eliminating noise interference and acoustic noise by printed circuit board ground plane layout
US6384659B2 (en) Integrated circuit
US20060087347A1 (en) Input circuit and semiconductor device
CN100490604C (en) Printing circuit board
JP4305616B2 (en) Control and address clock non-distributed memory system
JP2790311B2 (en) Semiconductor integrated circuit
JPS60154553A (en) Driving method for complementary mos integrated circuit
JPH07169840A (en) Semiconductor device
JP2998690B2 (en) Semiconductor integrated circuit device and clock signal supply method
JPH06310656A (en) Semiconductor integrated circuit
JPH0473951A (en) Semiconductor device
JPS5810369Y2 (en) multilayer wiring board
JPH0576783B2 (en)
JP2004031636A (en) Semiconductor device
JPH05190670A (en) Semiconductor integrated circuit device
JPS6366059B2 (en)
JPH1174358A (en) Semiconductor integrated circuit
JPS6164142A (en) Semiconductor integrated circuit device
JPS582055A (en) Remodeling of logical package
JPH0567682A (en) Wiring method of semiconductor chip

Legal Events

Date Code Title Description
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 19980623