JP2877058B2 - Film formation method - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a film forming method for forming a film having excellent adhesion and surface smoothness on a substrate by a so-called arc ion plating method.

[0002]

2. Description of the Related Art The arc-type ion plating method uses an arc-type evaporation source for evaporating a cathode material by utilizing an arc discharge at a cathode, and uses a reaction product of the cathode material or an atmospheric gas or the like based on the cathode material. In this method, a film is formed by depositing a material on a base material while applying a negative bias voltage to the material.

[0003] The ion plating method is widely used as a method of forming a hard thin film on cutting tools, mechanical parts, and the like. Among them, the arc type ion plating method is particularly excellent in the adhesion of the formed film. There is a feature that there is. This is because the cathode material evaporated from the arc evaporation source contains a large proportion of ionized particles, which are accelerated toward the base material by the bias voltage applied to the base material and accelerated toward the base material. This is because they can collide.

In addition, the arc type ion plating method is different from the ordinary ion plating method using an evaporation source of melting and evaporating a metal in a crucible, in which a plurality of cathodes having different kinds of cathodes are used. By arranging the evaporation source or continuously changing the type of the reaction gas introduced into the atmosphere, it has the feature that many kinds of films can be easily and continuously laminated.

[0005] By such an arc ion plating method, the surface of a base material constituting, for example, a cutting tool, a machine component, or the like has been conventionally coated with a film having excellent wear resistance, sliding properties, and the like. Have been done. Examples of such a film include a TiAlN film, a TiCN film, and a CrN film.

In this case, rather than forming the above-mentioned film directly on the surface of the base material, for example, as shown in FIG.
First, it is known that forming a titanium nitride (TiN) film 4 as a base layer on the base material 2 and forming a desired film 6 thereon further improves the adhesion of the film 6 to the base material 2. ing.

[0007]

As described above, the film is formed by using the arc ion plating method capable of forming a film having excellent adhesion and by interposing the titanium nitride film 4 as a base layer. Although the adhesion of the film 6 can be improved, there is a problem that the surface roughness of the film 6 is poor (that is, the surface roughness of the film 6 is large and the smoothness is poor).

In the arc type evaporation source, the surface of the cathode is locally heated by arc discharge, whereby the surface of the cathode is melted and the cathode material evaporates. This is because a large mass of the cathode material (which is called a droplet) evaporates together with the cathode material, which adheres to the substrate surface and deteriorates the surface roughness of the film. In particular, when evaporating a low melting point metal such as aluminum, the size of the droplet is large and the amount thereof is large, and the surface roughness of the film is further deteriorated.

When a hydrocarbon-based reaction gas such as methane used for forming a TiCN film or the like is used, carbide grows with droplets attached to the film surface as nuclei to form giant particles. This further deteriorates the surface roughness of the film.

Accordingly, an object of the present invention is to provide a film forming method capable of forming a film excellent in both adhesiveness and surface roughness on the surface of a substrate by an arc ion plating method. And

[0011]

In order to achieve the above object, a method for forming a film according to the present invention comprises a method for forming a film in a vacuum vessel serving also as an anode .
In a state where a negative bias voltage is applied to the base material using one or more arc evaporation sources that evaporate the cathode material by utilizing arc discharge at the cathode, first, titanium nitride is formed as a base layer on the base material. Forming a film, and then forming one or more films different from the titanium nitride film thereon, wherein the formation of the titanium nitride film is performed by surrounding a periphery of a side of a cathode made of titanium. Multiple facing the cathode
A ring-shaped part having a gas outlet of
Ring-shaped part is electrically connected to the vacuum vessel via a resistor.
An arc evaporation source having a gas spraying mechanism is used, and nitrogen gas is blown from the gas blowing mechanism to the cathode.

According to the above method, when a nitrogen gas is blown onto the titanium-made cathode of the arc-type evaporation source during the formation of the titanium nitride film, a large number of cathode spots of arc discharge are formed on the cathode surface and arc branching occurs near the cathode. The cathode constituent reacts with the nitrogen gas on the cathode surface to form a compound having a higher melting point than the original cathode constituent on the cathode surface, that is, in this case, titanium nitride is formed, which spreads the molten portion on the cathode surface. The formation of a coarse molten portion on the surface of the cathode is suppressed by such actions as suppressing the scattering of a large lump of the cathode material. As a result, a titanium nitride film having good surface roughness, that is, good smoothness, is formed on the substrate.

By forming a titanium nitride film having such a good surface roughness as a base layer and forming a desired film thereon, a reactive gas is not necessarily formed on the cathode of the arc evaporation source during the formation of the film. Without spraying, a film having good surface roughness can be formed. This is because if the surface roughness of the underlayer is good, the nuclei for the growth of giant particles do not exist when another film is formed thereon. It is considered that the reason is that it is also reflected on the surface roughness of the film.

According to the above-described operation, a film excellent in both adhesion and surface roughness can be formed on the surface of the substrate by the arc ion plating method.

[0015]

DESCRIPTION OF THE PREFERRED EMBODIMENTS An example of an arc evaporation source having a gas blowing mechanism is disclosed in Japanese Patent Application Laid-Open No. 63-18056. This arc type evaporation source has a trigger electrode in the shape of a pipe and also serves as a gas blowing mechanism.

An arc evaporation source having such a gas spraying mechanism may be used for forming the titanium nitride film 4 as the underlayer described above, but an arc having a gas blowing mechanism as shown in FIG. 1 may be used. It is more preferable to use the evaporation source 10.

The arc type evaporation source 10 is for generating a vacuum arc discharge between the cathode 12 and the vacuum vessel 50 also serving as an anode to evaporate the cathode material 14, and includes a front surface 12a of the cathode 12. It is characterized in that a gas blowing mechanism 40 for blowing a reactive gas 48 into the region is provided.

More specifically, the cathode 12 is made of a desired material. When the above-described titanium nitride film 4 is formed, the cathode 12 is made of titanium. This cathode 12
In this example, it is attached to a flange 16 made of a non-magnetic metal, and the flange 16 is attached via an insulator 20 to a mounting plate 22 made of a non-magnetic metal. To the vacuum vessel 50. The vacuum vessel 50 is grounded.

A magnet (more specifically, a permanent magnet) 18 for generating a magnetic field for controlling the state of the arc near the front surface of the cathode 12 is attached to the rear surface of the flange 16.

A direct current arc power supply 34 is connected between the flange 16 and thus the cathode 12 and the vacuum vessel 50 with the cathode 12 side being the negative side.

In the vicinity of the front surface 12a of the cathode 12, an arc ignition trigger electrode 28 driven as shown by an arrow A is provided, and a current limiting resistor 32 is provided between the trigger electrode 28 and the vacuum vessel 50. Is connected.

The side periphery of the cathode 12 is a ring-shaped shield made of a non-magnetic metal in order to spread the arc, that is, to cause an arc discharge between the cathode 12 and the vacuum vessel 50 at a distance from the cathode 12. The shield plate 26 is covered by a plate 26, and is connected to a vacuum vessel 50 via a column 27 and a resistor 30.

In this example, the gas blowing mechanism 40 is mounted on the inner periphery of the shield plate 26 and has a plurality of substantially uniformly arranged gas blowing ports 46 facing the front surface 12a of the cathode 12. And a gas supply pipe 42 for supplying a reactive gas 48 to the ring-shaped portion 44. A reactive gas 48 is supplied to the gas supply pipe 42 from a gas source via a flow controller (both not shown).

Gas supply pipe 42 and ring-shaped portion 44
Are set to the same potential as the shield plate 26. By doing so, it is possible to prevent abnormal discharge from occurring between the cathode 12 and the gas supply pipe 42 and the ring-shaped portion 44. This is because the resistor 30 is interposed between the positive side of the arc power supply 34 (that is, the side of the vacuum vessel 50 also serving as an anode) and the gas supply pipe 42 and the like, so that the discharge from the cathode 12 to the gas supply pipe 42 and the like. Is to be prevented by the resistor 30.

The reactive gas 48 may be any as long as it reacts with the material constituting the cathode 12 to produce a compound, more specifically, a compound having a higher melting point than the cathode material. , Oxygen gas and the like. More specifically, when the above-described titanium nitride film 4 is formed, the cathode 12 is titanium and the reactive gas 48 is nitrogen gas. In this case, the two are combined to form titanium nitride (TiN). You.

In the arc type evaporation source 10, after the trigger electrode 28 is brought into contact with the front surface 12 a of the cathode 12 to generate the first spark, the trigger electrode 28 is separated from the cathode 12. An arc discharge occurs between the vacuum vessel 50 also serving as the anode and the arc discharge is maintained,
Thereby, the front surface 12a of the cathode 12 is melted, from which the cathode material 14 evaporates.

At this time, when an arc discharge is generated in the cathode 12 while blowing the reactive gas 48 from the gas outlet 46 of the gas blowing mechanism 40 to the region including the front surface 12a of the cathode 12, the cathode point of the arc discharge is changed. A large number of arcs occur on the surface of the cathode 12 to cause arc branching near the front surface 12a of the cathode 12. The cathode constituent material and the reactive gas 48 react on the front surface 12a of the cathode 12 and have a higher melting point than the original cathode constituent material on the cathode front surface 12a. Of the cathode front surface 12
By suppressing the spread of the melted portion at a, the formation of a coarse melted portion at the cathode front surface 12a is suppressed, and the scattering of a large lump of the cathode material 14 is prevented. As a result, a film having good surface roughness, that is, a film having good smoothness, can be formed on the substrate.

Therefore, when the above-described titanium nitride film 4 as an underlayer is formed by an arc ion plating method using such an arc evaporation source 10, a negative bias voltage is applied to the substrate 2. By applying nitrogen gas as a reactive gas 48 to the front surface 12a of the cathode 12 made of titanium in a state where the titanium nitride film is applied, droplets are prevented from scattering and a titanium nitride film having a good surface roughness is formed on the base material 2. 4 can be formed. Then, a titanium nitride film 4 having such a good surface roughness is formed as a base layer on the base material 2, and the above-described TiAlN film, TiCN
Desired film 6 different from titanium nitride film 4 such as film, CrN film, etc.
Is formed by the arc type ion plating method, so that the cathode 12 of the arc type evaporation source 10 is formed when the film 6 is formed.
The film 6 having good surface roughness can be formed without necessarily spraying the reactive gas 48. This is because if the surface roughness of the underlayer is made good, another film 6
This is considered to be because the formation of giant particles does not have nuclei for growing giant particles, so that the good surface roughness of the underlying layer is also reflected on the surface roughness of the film 6 thereon.

The titanium nitride film 4 formed on the substrate 2
The adhesion of the film 6 and the film 6 are both excellent because the films are formed by using the arc-type ion plating method for the reasons described above.

As a result, a film 6 having both excellent adhesion and surface roughness can be formed on the surface of the substrate 2 by the arc ion plating method.

As a result, the film forming method as described above is used for coating the surface of a cutting tool such as a drill or a carbide tip or other mechanical parts with a film having characteristics such as wear resistance. If this is the case, the life of the cutting tool or the mechanical component can be greatly extended.

When the upper film 6 is formed, the reactive gas 48 may or may not be sprayed on the cathode 12 of the arc evaporation source 10. When the reactive gas 48 is not blown, the arc evaporation source 10 is the same as a conventional arc evaporation source. However, spraying the reactive gas 48 prevents droplets from being scattered even when the film 6 is formed for the above-described reason, so that the surface roughness of the film 6 can be further improved.

Further, as a result that the surface roughness of the film 6 on the underlayer becomes good, when a film different from the film 6 is further formed thereon, the good surface roughness of the film 6 below is reflected. As a result, the surface roughness of the film becomes good. The adhesion of the film is of course good because the arc ion plating method is used. The same applies when a plurality of different kinds of films are stacked on the film 6.

In the above-mentioned arc-type evaporation source in which the trigger electrode also serves as a gas blowing mechanism, the gas outlet at the tip of the trigger electrode is always located in front of the cathode, so that the arc-type evaporation source is not used. As the source is used, the cathode material adheres to the gas outlet and closes the gas outlet, making it difficult to supply a stable reactant gas to the cathode. However, in the arc-type evaporation source 10, there is no need to make the trigger electrode 28 into a pipe shape and spray the reaction gas from the trigger electrode 28, so that the problem that the tip end portion is blocked by the cathode material 14 does not occur. In addition, since the gas outlet 46 of the gas blowing mechanism 40 is arranged near the side of the cathode 12 avoiding the front of the cathode 12, the cathode material 14 evaporating from the front surface 12a of the cathode 12 by arc discharge. It is unlikely that the gas outlet 46 adheres to the gas outlet 46 and closes the gas outlet 46. Accordingly, operations such as replacement of parts and cleaning of the gas outlet 46 are reduced, so that the time required for maintenance is shortened and replacement parts can be reduced.

Next, some more specific embodiments will be described.

<Embodiment 1> As shown in FIG. 2, in the arc-type ion plating apparatus in which the above-mentioned arc-type evaporation sources 10 are installed one by one on two opposite walls of a vacuum vessel 50, each cathode 12 was Ti metal. The base material 2 is a mirror-polished plate-shaped high-speed steel,
This is attached to a holder 52, and a bias power supply 54
, A negative bias voltage is applied.

First, an underlying TiN film was formed on the substrate 2. The method uses a gas blowing mechanism 40 of each evaporation source 10.
(See FIG. 1; the same applies hereinafter) from 500 ml / mi
n while blowing nitrogen gas to the cathode 12
The TiN film was formed on the substrate 2 to which the bias voltage of -200 V was applied by the arc discharge of the current of. Further, a methane gas (CH ₄ ) was added at 200 ml / min into the spray gas on the underlying TiN film to form a 3 μm-thick TiCN film. In the first embodiment,
The thicknesses of the underlying TiN films are 0.05, 0.1,
0.5, 1.0, 2.0, 3.0, 5.0 μm,
Seven examples in which a 3 μm TiCN film was laminated thereon were examined. When a reactive gas is blown onto the cathode 12, a reactive gas 56 of the same kind as the blown gas may or may not be introduced into the vacuum vessel 50 from the wall thereof. Did not (the same applies to the following).

FIG. 3 shows the surface roughness (maximum surface roughness Rmax) of the TiCN film for each thickness of the TiN film of the above seven examples. In the figure, as a comparative example, the arc-type evaporation source 10 is supplied with the reactive gas from the wall surface of the vacuum vessel 50 without using the gas blowing mechanism 40 (that is, without blowing the reactive gas 48 on the cathode 12). Underlayer Ti, which was formed using a conventional arc-type evaporation source in which only 56 was introduced.
No N film (Comparative Example 1) and underlayer TiN film of 2 μm
This shows an example in which a 3 m thick TiCN film is stacked on the substrate of Comparative Example 2 (Comparative Example 2).

From FIG. 3, it can be seen that, in the first embodiment, particularly when the thickness of the underlayer is 0.1 μm or more, the surface roughness of the TiN film becomes about 1.5 μm or less, which is a remarkable effect on the improvement of the surface roughness. Can be seen. The low effect of improving the surface roughness with the underlayer having a thickness of 0.05 μm is considered to be due to insufficient uniform growth of the TiN film. Further, the reason why the surface roughness slightly increases when the thickness of the TiN film is 2 μm or more is that although the underlying TiN film is a smooth film, the surface roughness of the underlying is somewhat deteriorated as the film thickness increases. It is thought that it becomes.

FIG. 4 shows the adhesion strength (critical adhesion strength) of the film on the substrate by the scratch test method. Example 1 when the thickness of the TiN film of the underlayer was 0.1 μm or more
Each film has a higher adhesion strength than Comparative Example 2.
In particular, when the thickness of the TiN film is 1 μm or more, it exceeds 50 N, indicating that the adhesion is extremely good. From this result, it is considered that the adhesion of the film on the substrate depends on the adhesion of the underlayer. The tendency of the adhesion strength shows the same tendency as the surface roughness, and it can be said that good surface roughness means good adhesion by a scratch test.

From the above results, in order to sufficiently enhance the effect of improving the adhesion and the surface roughness of the film formed on the underlayer, the thickness of the TiN film of the underlayer must be 0.1 μm.
It can be seen that it is preferable to set the thickness within a range of about 5 μm.

<Example 2> A high-speed steel drill was coated with a TiCN / TiN laminated film under the same conditions as in Example 1 (Example 2). The cutting life was compared with that of a drill (Comparative Example 3) coated as an arc-type evaporation source. The comparison was performed when the thickness of the underlying TiN film was 2 μm. The base material drill used was 10 mmφ, and the work material was 25 mm thick pre-hardened steel (HRC = 40). The cutting conditions were as follows: rotation speed 1000 rotations / min, feed 0.12 mm / rev.
And oily cutting oil was used. The cutting life was set to the time of burning in the penetration test. FIG. 5 shows the cutting life as a cutting length. The device of Example 2 has a life almost twice as long as that of Comparative Example 3. This shows that the cutting life of the cutting tool can be significantly extended by obtaining a film having both good surface roughness and good adhesion.

<Embodiment 3> The above-mentioned arc type evaporation source 10 is provided on two opposite wall surfaces of the vacuum vessel 50.
In the arc-type ion plating apparatus in which a total of four units are installed, the cathode 12 of the arc-type evaporation source 10 on each wall is provided.
To Ti and TiAl (Ti _0.5 Al _0.5 ), the base material 2 is a plate-shaped cemented carbide, and first, using two opposed arc evaporation sources 10 having a Ti cathode, each 500 ml
/ Min nitrogen gas is blown from each gas spraying mechanism 40 to the Ti cathode, and a TiN film is first formed on the substrate 2 to which a bias voltage of -200 V is applied by 0.1 μm by arc discharge with a current of 100 A. Formed and then used as a reactive gas 56 from the walls of the vacuum vessel 50 using two opposing arc-type evaporation sources 10 having a TiAl cathode as conventional arc-type evaporation sources without gas spraying. While introducing nitrogen gas, TiAlN
The film was laminated at 3 μm.

The T of the third embodiment thus obtained was
FIG. 6 shows an optical micrograph of the surface of the iAlN / TiN laminated film.
Shown in 7 and 8 are comparative examples. FIG. 7 is a diagram showing a TiAlN / TiN laminated film (Comparative Example 4) having the same film thickness as in Example 3 formed by using each of the arc-type evaporation sources 10 as a conventional arc-type evaporation source that does not spray gas. 8
Is an optical microscope photograph of the surface of a TiAlN single layer film (Comparative Example 5) having the same film thickness formed by using each of the arc evaporation sources 10 as a conventional arc evaporation source. In the case of both comparative examples, nitrogen gas was introduced as a reactive gas 56 from the wall surface of the vacuum vessel 50. It can be seen that the film of Example 3 in FIG. 6 has better surface roughness because the size and amount of the giant particles on the surface are suppressed as compared with those of Comparative Examples 4 and 5. Further, the adhesion strength of the film of Example 3 by a scratch test was 60 N. On the other hand, those of Comparative Examples 4 and 5 were 38N and 43N, respectively. This indicates that the film of Example 3 is excellent not only in surface roughness but also in adhesion.

Embodiment 4 TiAlN / Ti of Embodiment 3
The N laminated film was coated on a cemented carbide milling cutter tip (Example 4), and a similar milling cutter tip was coated under the same conditions as Comparative Example 4 by comparison with Comparative Example 6 by a cutting wear test. did. The work material used was S48C material. The cutting conditions were a dry speed of 200 m / min, a feed of 0.25 mm / rev, and a cut of 2.0 mm. The progress of wear was measured by measuring the amount of wear on the flank. FIG. 9 shows the result. In Example 4, the abrasion was about 1/3 of that in Comparative Example 6, indicating that the abrasion resistance was significantly improved.

<Embodiment 5> Using the same apparatus as in Embodiment 3, a Cr cathode was installed in place of the TiAl cathode,
First, a TiN film was formed to a thickness of 2 μm by arc discharge at a bias voltage of −200 V and 100 A each while blowing nitrogen gas onto the Ti cathodes of two opposing arc-type evaporation sources 10 on the mirror-polished high-speed steel base material 2. And two opposing arc-type evaporation sources 1 having a Cr cathode thereon.
0 was used as a conventional arc-type evaporation source without gas spraying, and a 3 μm CrN film was laminated while introducing nitrogen gas as a reactive gas 56 from the wall surface of the vacuum vessel 50. The thus obtained CrN / TiN of Example 5
An optical microscope photograph of the surface of the laminated film is shown in FIG. As a comparative example, 5 μm formed by using each arc-type evaporation source 10 as a conventional arc-type evaporation source without gas spraying
Example 5 formed by using the CrN single layer film of Comparative Example 7 (Comparative Example 7), and similarly using each arc-type evaporation source 10 as a conventional type.
10 and 11 show optical micrographs of the surface of the CrN / TiN laminated film (Comparative Example 8) having the same film thickness configuration as that of FIG. In the case of both comparative examples, nitrogen gas was introduced as a reactive gas 56 from the wall surface of the vacuum vessel 50. The surface roughness of Example 5 was very good, followed by Comparative Example 7 and Comparative Example 8. The measured values of the surface roughness were 1.2, 1.8, and 2.9 μm in maximum surface roughness, respectively. From this, it can be seen that by improving the surface roughness of the TiN film as the CrN underlayer, the surface can be made smoother than in the case of the CrN single layer. The adhesion strength according to the scratch test method was 58, 57, and 54N, respectively.
In this case, no significant improvement was observed.

The film to be formed on the underlayer TiN film is not limited to the above-mentioned TiAlN film, TiCN film, and CrN film. It may be a film made of a nitride, carbide or carbonitride of the group 4A, 5A or 6A shown in the table.

[0048]

As described above, according to the present invention, the formation of a titanium nitride film as an underlayer is performed by using an arc evaporation source having a cathode made of titanium while blowing nitrogen gas on the cathode. In addition, a titanium nitride film having good surface roughness can be formed on a substrate. By forming a different kind of film on such a titanium nitride film having a good surface roughness, it is not necessary to spray a reactive gas onto the cathode of the arc evaporation source at the time of forming the film. A film having good roughness can be formed. As a result, a film excellent in both adhesion and surface roughness can be formed on the surface of the substrate by the arc ion plating method. Moreover, the ring-shaped part as described above
Using an arc evaporation source equipped with a gas spraying mechanism having
Therefore, the gas outlet of the gas blowing mechanism is
Is less likely to be blocked due to
Work such as cleaning of the outlet can be reduced. Furthermore,
The ring-shaped part of the gas blowing mechanism also serves as the anode via a resistor
Because it is connected to a vacuum vessel,
An abnormal discharge can be prevented from occurring between the two.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view showing an example of an arc evaporation source having a gas blowing mechanism used in a film forming method according to the present invention.

FIG. 2 is a schematic view showing an example of an arc ion plating apparatus provided with two arc evaporation sources shown in FIG.

FIG. 3 is a diagram showing an example of a measurement result of a surface roughness of a TiCN / TiN laminated film formed on a base material.

FIG. 4 is a view showing an example of a measurement result of an adhesion strength of a TiCN / TiN laminated film formed on a base material.

FIG. 5 is a diagram showing an example of a measurement result of a cutting life of a drill coated with a TiCN / TiN laminated film.

FIG. 6 shows TiAlN / T formed by the method of the embodiment.
It is an optical microscope photograph of the surface of an iN laminated film, and a magnification is 400.
It is twice.

FIG. 7 shows TiAlN / T formed by the method of the comparative example.
It is an optical microscope photograph of the surface of an iN laminated film, and a magnification is 400.
It is twice.

FIG. 8 is an optical microscope photograph of the surface of a TiAlN single layer film formed by the method of the comparative example, and the magnification is 400 times.

FIG. 9 is a view showing an example of a cutting wear test result of a milling cutter tip coated with a TiAlN / TiN laminated film.

FIG. 10 shows CrN / Ti formed by the method of the embodiment.
It is an optical microscope photograph of the surface of an N laminated film, and a magnification is 400 times.

FIG. 11 is an optical micrograph of the surface of a CrN single layer film formed by the method of the comparative example, and the magnification is 400 times.

FIG. 12 shows CrN / Ti formed by the method of the comparative example.
It is an optical microscope photograph of the surface of an N laminated film, and a magnification is 400 times.

FIG. 13 is a schematic cross-sectional view showing an example in which a titanium nitride film is formed as a base layer on a base material, and one film different from the titanium nitride film is formed thereon.

[Explanation of symbols]

 2 Base material 4 Titanium nitride film 6 Film 10 Arc evaporation source 12 Cathode 14 Cathode material 40 Gas spray mechanism 48 Reactive gas 50 Vacuum container

──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Hiroshi Murakami 47-inch Takanecho Umezu, Kyoto, Kyoto, Japan Nissin Electric Co., Ltd. (56) References JP-A-6-306645 (JP, A) JP-A-3-125060 (JP, U) (58) Fields investigated (Int. Cl. ⁶ , DB name) C23C 14/00 -14/58

Claims (2)

(57) [Claims] 1. A method for evaporating a cathode material using an arc discharge at a cathode in a vacuum vessel also serving as an anode.
With a negative bias voltage applied to the substrate using at least one or more arc evaporation sources, a titanium nitride film is first formed as a base layer on the substrate, and then a different type of titanium nitride film is formed thereon. In the film forming method for forming one or more films, the formation of the titanium nitride film may be performed by forming a film around the side of a cathode made of titanium.
Multiple gas outlets surrounding the cathode and facing the cathode
And a ring-shaped part having resistance
A gas blower electrically connected to the vacuum vessel via
Using an arc-type evaporation source equipped with an attachment mechanism ,
A film forming method, wherein the method is performed while blowing nitrogen gas from a gas blowing mechanism . 2. The method according to claim 1, wherein said titanium nitride film has a thickness of 0.1 μm or less.
2. The film forming method according to claim 1, wherein the thickness is 5 μm.