JP2737859B2 - Manufacturing method of semiconductor chip - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a method for manufacturing a semiconductor chip, and more particularly to a method for manufacturing a semiconductor chip by cutting a patterned wafer.

[0002]

2. Description of the Related Art A conventional method will be described below. 4 and 5 are views for explaining a conventional method for manufacturing a semiconductor chip. Wafer surface pattern 21
The base film 23a is attached to the surface of the wafer 20 on which is formed via the adhesive 22a. The wafer surface pattern 21 is protected by the base film 23a [FIG. 4 (a)].

Next, the rear surface of the wafer 20 is polished by a predetermined thickness x from the rear surface side. Thereafter, dirt and water adhering to the wafer 20 are removed [FIG. 4 (b)]. Next, after removing the base film 23a stuck on the surface of the wafer 20, the characteristics of the wafer 20 are checked [FIG. 4 (c)]. Next, a base film 23b is attached to the back surface of the wafer 20 via an adhesive 22b.
The fixing jig 24 is bonded on the 0-side adhesive 22b. By this step, the chip is fixed so as not to be unstable during dicing [FIG. 4 (d)].

Next, the wafer surface pattern 21 is recognized,
Positioning is performed, and a predetermined position on the wafer surface 20 is cut by the blade 25 to form individual chips 30. Thereafter, dirt and water adhering to the wafer 20 are removed [FIG.
(e)]. Next, the chip 30 is peeled off from the base film 23b by the jig 27 which is pushed up from the base film 23b side, and at the same time, the chip 30 is held by the suction jig 26 from the surface of the chip 30 (FIG. 5 (a)).

Next, the peeled chip 30 is transferred to the die pad 29 side by the suction jig 26 as it is,
Then, the chip 30 is joined via a joining material 28 (FIG. 5B).

[0006]

However, the conventional method has the following problems. (1) As the wafer size increases, stress occurs when handling back-polished wafers.
Cracks etc. occur. (2) Since the process is performed with the wafer surface exposed, Storage facilities and condition setting for preventing oxidation of the wafer surface are required. B. Since dirt generated in dicing adheres to the chip surface and the dirt cannot be completely removed even by washing, dirt is defective. C. If the blade is damaged during dicing of the wafer, cracks and chips are generated on the surface side of the chip, resulting in failure. D. Si scraps remaining in the dicing adhere to the chip surface and the suction jig during die bonding, and scratch the chip surface to cause defects. E. FIG. Damage to the chip surface due to die bond mistakes. (3) Since a suction jig is required for each chip size, the switching frequency increases and the operation rate decreases. (4) It is necessary to use two tapes for one wafer. (5) At the time of chip surface detection, a detection error occurs due to variations in the surface state. (6) In the case of completely cutting the chip with the blade at the time of dicing, it is necessary to slightly cut the base film, so that the life of the blade is shortened and the cost is increased. On the other hand, even if a part is left uncut, the life of the blade can be prolonged and cutting can be performed stably, but a step of breaking is required as post-processing, and Si scraps are scattered.

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and an object of the present invention is to provide a semiconductor chip manufacturing method capable of streamlining a semiconductor chip manufacturing method and reducing a defective rate. .

[0008]

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and the inventions corresponding to claims 1 and 2 will be described below as inventions 1 and 2, respectively.
And Invention 1 uses a wafer having a surface pattern formed thereon.
Cut into individual chips and die-pad each chip
In the step of bonding to the wafer, the surface pattern
Cut to a predetermined depth from the side of the
The solid pattern provided on the surface pattern side of c and around the wafer
After attaching the fixture to the base film,
By polishing the surface, it is divided into individual chips and
After that, each chip is put on the adhesive material on the die pad,
By pushing up from the back side of the base film,
By separating and bonding from the base film
It has been characterized.

According to a second aspect of the present invention, a surface pattern is formed.
Wafer is cut into individual chips, and each chip is
In the step of bonding to the die pad, the surface of the wafer
Fix the fixing jig provided on the pattern side and around this wafer.
Position based on the pattern formed on this fixture
After bonding to the base film in the fixed state,
Polish the back surface of the wafer, and then
Position from the wafer side with the
By cutting the fixed position, it is divided into individual chips,
Then each of those chips is glued on the die pad
Then, push up from the back side of the base film
From the base film
It is characterized by:

[0010]

According to the first aspect of the present invention, the cut depth of the wafer does not need to reach the base film, and the surface after the wafer is cut is not damaged because the base film is in close contact with the surface of the wafer. According to the second aspect of the present invention, since the surface of the wafer is formed in a state in which the base film is in close contact with the entire process, the surface is not damaged. Sa
Furthermore, the pattern on the fixing jig is detected and the wafer
Can attach and dice

In addition, as an operation common to the first and second inventions, a step is provided in which each chip is pushed up from the back side of the base film and adhered to the adhesive on the die pad. Adhere to. Also, a dedicated base for each wafer size
No film is required. In addition, sharing of the post-process
It becomes possible.

[0012]

FIG. 1 is a temporal sectional view showing an embodiment corresponding to the present invention 1 (hereinafter referred to as embodiment 1). The details will be described below with reference to the drawings. First, the characteristics of the wafer W on which the wafer surface pattern is formed are checked [FIG. 1 (a)]. Next, as shown in FIG.
Is cut into individual chip shapes while leaving about half of x. Therefore, all the chips are not separated but are connected. Thereafter, dirt and water adhering to the wafer W are removed [FIG. 1 (b)].

Next, a base film 4 is attached to the front side of the wafer W via an adhesive 3 in order to fix the chips when the back surface is polished in the next step. A fixing jig 5 is provided around the wafer W (FIG. 1 (c)). Next, a predetermined amount of the wafer W is shaved from the rear surface side of the wafer W into individual chips C. Then, dirt and water adhering to the wafer W are removed [FIG. 1 (d)].

Next, the back surface of the chip C adhered on the base film 4 is detected, and the chip C is pushed up from the base film 4 side by the pushing-up jig 8 so as to move in the direction of the arrow. The chip C is peeled off from the base film 4 by the adhesive force of the bonding material 6 adhered to the bonding material 7, and the chip C is transferred while being bonded to the die pad 7 (FIG. 1 (e)). .

FIG. 2 and FIG. 3 are sectional views with time showing an embodiment corresponding to the present invention 2 (hereinafter referred to as embodiment 2).
The details will be described below with reference to the drawings. First, the characteristics of the wafer W on which the wafer surface pattern is formed are checked [FIG. 2 (a)]. Next, in order to fix the chip when performing the back surface polishing and dicing performed in the next step,
The pattern 9 is applied to the wafer W and the fixing jig 5 via the adhesive 3.
The base film 4 is affixed in the state where it is positioned according to the above. Next, a predetermined amount of the wafer W is cut from the back side of the wafer W [FIG. 2 (b) -1, 2].

Next, by recognizing the pattern 9 on the fixing jig 5 side, it is positioned and cut at a predetermined position by the blade 2 to obtain individual chips C. Thereafter, dirt and water adhering to the wafer W are removed [FIG. 2 (c)]. Next, the back surface of the chip C adhered to the base film 4 is detected, and the chip C is pushed up from the base film 4 side by the pushing-up jig 8 so that the chip C adheres to the die pad 7 moving in the direction of arrow. The chip C is peeled off from the base film 4 by the adhesive force of the bonding material 6, and the chip C is transferred while being attached to the die pad 7 (FIG. 3).

Tables 1 and 2 show the effects of the above-described first and second embodiments as compared with the prior art with respect to the above-mentioned problems.

[0018]

[Table 1]

As shown in Table 1, in Example 1, in particular, the tape is attached and the wafer is polished in a state in which about half of the wafer is left uncut, so that the cutting tool lasts longer than before. Can be given as Also,
In Example 2, the base film adheres to the chip surface until the die bonding in the final step, and the surface is protected, so that the wafer does not crack or crack, and the wafer surface is oxidized or contaminated. In addition, a remarkable effect can be obtained in that cracking and chipping failure due to trouble during die bonding do not occur.

Further, as a common effect of the first and second embodiments, a dedicated suction jig and a component for each chip size are not required, so that the jig switching frequency is reduced and the operation rate is reduced. As a result, the chip surface is in close contact with the base film, so that the chip surface is not damaged during the transfer, so that cracking due to adhesion of Si scraps in the die bond does not occur.

As described above, according to the present invention, c.
Eha surface pattern side and fixing jig as base film
Since the configuration in which each of the steps in the adhered state, oxidation of the wafer surface, Ki out to prevent contamination, also in the process
Defects that occur during
A dedicated base film for each size of c is not required. Sa
In addition, whether the transfer jig can be shared in the post-process
Therefore, the frequency of switching jigs can be reduced. Especially,
According to the first aspect, the life of the blade for cutting the wafer can be extended.
And can streamline the manufacturing process.
In addition, the cost can be reduced. Invention 2
The pattern on the fixing jig,
Since mounting and dicing can be performed, the position of the element
The alignment is simplified and the manufacturing process is streamlined as in Invention 1.
And reduce costs.
Wear.

[Brief description of the drawings]

FIG. 1 illustrates a first embodiment of the present invention.

FIG. 2 illustrates a second embodiment of the present invention.

FIG. 3 illustrates a second embodiment of the present invention.

FIG. 4 illustrates a conventional example.

FIG. 5 illustrates a conventional example.

[Explanation of symbols]

 1 ··· Wafer surface pattern 2 ··· Cutting blade 3 ··· Adhesive 4 ··· Base film 5 ··· Fixing jig 6 ··· Joining material 7 ··· Die pad 8 .... Push-up jig 9 .... Pattern

Claims (2)

(57) [Claims] 1. A wafer having a surface pattern formed thereon is individually
Cut into chips and glue each chip to die pad
In the step of performing
A notch to a predetermined depth, and then
Fixing jigs provided on the surface pattern side and around the wafer
After bonding the back surface of the wafer to the base film,
By polishing, split into individual chips and then
Each of these chips is attached to the adhesive material on the die pad,
By pushing up from the back side of the film,
Characterized in that it is separated from the base film and adhered.
A method for manufacturing a conductor chip. 2. A wafer having a surface pattern formed thereon is individually
Cut into chips and glue each chip to die pad
In the step of performing, the surface pattern side of the wafer and
Place the fixing jig around the wafer on this fixing jig.
With positioning based on the pattern being formed
After bonding to this base film, the back side of the wafer is
Polished and then positioned based on the pattern on the fixture
Cut the specified position from the wafer side in the fixed state
By splitting them into individual chips,
Each of the bases is attached to the adhesive material on the die pad,
By pushing up from the back side of the
Semiconductor chip characterized by being separated from and adhered to the film
Manufacturing method.