JP2750255B2 - Electronic component storage package - Google Patents
Electronic component storage packageInfo
- Publication number
- JP2750255B2 JP2750255B2 JP5025193A JP2519393A JP2750255B2 JP 2750255 B2 JP2750255 B2 JP 2750255B2 JP 5025193 A JP5025193 A JP 5025193A JP 2519393 A JP2519393 A JP 2519393A JP 2750255 B2 JP2750255 B2 JP 2750255B2
- Authority
- JP
- Japan
- Prior art keywords
- lid
- metal layer
- brazing material
- insulating base
- electronic component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16195—Flat cap [not enclosing an internal cavity]
Landscapes
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Ceramic Products (AREA)
Description
【0001】[0001]
【産業上の利用分野】本発明は半導体素子や水晶振動子
等の電子部品を収容するための電子部品収納用パッケー
ジに関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a package for accommodating electronic components such as a semiconductor element and a quartz oscillator.
【0002】[0002]
【従来の技術】従来、半導体素子や水晶振動子等の電子
部品を収容する電子部品収納用パッケージは一般に、酸
化アルミニウム質焼結体等の電気絶縁材料から成り、そ
の上面の略中央部に半導体素子等の電子部品を収容する
ための凹部を有し、且つ該凹部周辺より外部にかけて導
出されたタングステン、モリブデン、マンガン等の高融
点金属粉末から成るメタライズ配線層を有する絶縁基体
と、電子部品を外部電気回路に電気的に接続するために
前記メタライズ配線層に銀ロウ等のロウ材を介し取着さ
れた外部リード端子と、酸化アルミニウム質焼結体等の
電気絶縁材料から成る蓋体とから構成されており、絶縁
基体の凹部底面に半導体素子等の電子部品を接着剤を介
して接着固定し、電子部品の各電極をメタライズ配線層
にボンディングワイヤを介して電気的に接続するととも
に絶縁基体上面に蓋体を半田等から成るロウ材により接
合させ、絶縁基体と蓋体とから成る容器の内部に電子部
品を気密に収容することによって製品としての電子装置
となる。2. Description of the Related Art Conventionally, an electronic component housing package for housing electronic components such as a semiconductor element and a quartz oscillator is generally made of an electrically insulating material such as an aluminum oxide sintered body, and a semiconductor is provided substantially at the center of the upper surface thereof. An insulating base having a recess for accommodating an electronic component such as an element, and having a metallized wiring layer made of a refractory metal powder of tungsten, molybdenum, manganese, or the like led out from around the recess to the outside; An external lead terminal attached to the metallized wiring layer via a brazing material such as silver brazing to electrically connect to an external electric circuit, and a lid made of an electrically insulating material such as an aluminum oxide sintered body. An electronic component such as a semiconductor element is bonded and fixed to the bottom surface of the concave portion of the insulating base via an adhesive, and each electrode of the electronic component is bonded to a metallized wiring layer. The electronic component is connected to the upper surface of the insulating base with a brazing material made of solder or the like, and the electronic components are hermetically contained in a container consisting of the insulating base and the lid. Electronic device.
【0003】尚、かかる従来の電子部品収納用パッケー
ジは絶縁基体への蓋体の接合が絶縁基体及び蓋体の相対
向する主面に予めタングステン、モリブデン、マンガン
等の高融点金属粉末から成る層とニッケルから成る層と
金から成る層の3 層構造を有する環状金属層を被着させ
ておき、絶縁基体と蓋体の各々に被着させた環状金属層
を半田等のロウ材を介し接合することによって行われ
る。In such a conventional package for housing electronic parts, the lid is bonded to the insulating base by forming a layer made of a high melting point metal powder such as tungsten, molybdenum, or manganese on the opposing main surfaces of the insulating base and the lid. An annular metal layer having a three-layer structure consisting of a metal layer and a layer made of nickel and a layer made of gold is adhered, and the annular metal layers adhered to each of the insulating base and the lid are joined via a brazing material such as solder. It is done by doing.
【0004】また前記絶縁基体と蓋体との接合は蓋体に
被着させた環状金属層の全表面に予め半田等のロウ材を
接合させておき、絶縁基体の環状金属層上に蓋体を、間
にロウ材が挟まるようにして載置させ、次に前記蓋体を
絶縁基体側に一定圧力で押圧するとともにロウ材に約30
0 〜350 ℃の温度を印加し、ロウ材を加熱溶融させるこ
とによって行われる。[0004] Further, the insulating base and the lid are joined with a brazing material such as solder previously bonded to the entire surface of the annular metal layer adhered to the lid, and the lid is placed on the annular metal layer of the insulating base. Is placed so that the brazing material is sandwiched therebetween, and then the lid is pressed against the insulating base with a constant pressure, and about 30
This is performed by applying a temperature of 0 to 350 ° C. and heating and melting the brazing material.
【0005】[0005]
【発明が解決しようとする課題】しかしながら、この従
来の電子部品収納用パッケージにおいては、絶縁基体に
被着させた環状金属層と蓋体に被着させた環状金属層と
を半田等のロウ材を介して接合させ、絶縁基体と蓋体と
から成る容器内部に電子部品を気密に封止する際、蓋体
を絶縁基体側に一定圧力で押圧しながらロウ材を加熱溶
融させると溶融ロウ材の一部が容器外部に流出し、絶縁
基体と蓋体との間に介在するロウ材の量が少なくなって
絶縁基体と蓋体の接合強度が低下してしまい、その結
果、絶縁基体と蓋体とから成る容器の気密封止の信頼性
が大きく劣化するという欠点を有していた。However, in this conventional electronic component housing package, the annular metal layer attached to the insulating base and the annular metal layer attached to the lid are made of a brazing material such as solder. When the electronic component is hermetically sealed in a container formed of an insulating base and a lid, the brazing material is heated and melted while pressing the lid against the insulating base at a constant pressure. Of the insulating base and the lid, the amount of brazing material interposed between the insulating base and the lid is reduced, and the bonding strength between the insulating base and the lid is reduced. There is a disadvantage that the reliability of hermetic sealing of the container made of the body is greatly deteriorated.
【0006】[0006]
【発明の目的】本発明は上記欠点に鑑み案出されたもの
で、その目的は絶縁基体と蓋体との間に所定量のロウ材
を介在させ、絶縁基体と蓋体とから成る容器の気密封止
を完全とすることによって容器内部に収容する電子部品
を長期間にわたり正常、且つ安定に作動させることがで
きる電子部品収納用パッケージを提供することにある。SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned drawbacks, and has as its object to provide a container comprising an insulating base and a lid with a predetermined amount of brazing material interposed between the insulating base and the lid. It is an object of the present invention to provide an electronic component storage package that allows normal and stable operation of electronic components stored in a container for a long period of time by perfecting airtight sealing.
【0007】[0007]
【課題を解決するための手段】本発明は上面外周部に環
状金属層を被着させた絶縁基体と下面外周部に環状金属
層を被着させた蓋体とから成り、絶縁基体に被着させた
環状金属層と蓋体に被着させた環状金属層とをロウ材を
介し接合させることによって内部に電子部品を気密に収
容するようになした電子部品収納用パッケージであっ
て、前記絶縁基体の環状金属層と蓋体の環状金属層とを
接合させるロウ材に無機物粉末が埋入されていることを
特徴とするものである。SUMMARY OF THE INVENTION The present invention comprises an insulating substrate having an annular metal layer attached to the outer peripheral portion of the upper surface and a lid having an annular metal layer attached to the outer peripheral portion of the lower surface. An electronic component housing package in which electronic components are hermetically housed by joining the annular metal layer thus formed and the annular metal layer attached to the lid via a brazing material, An inorganic powder is embedded in a brazing material for joining the annular metal layer of the base and the annular metal layer of the lid.
【0008】[0008]
【実施例】次に本発明を添付図面に基づき詳細に説明す
る。図1は本発明の電子部品収納用パッケージの一実施
例を示し、1は電気絶縁材料から成る絶縁基体、2は同
じく電気絶縁材料から成る蓋体である。この絶縁基体1
と蓋体2とで半導体素子等の電子部品3を収容するため
の容器4が構成される。BRIEF DESCRIPTION OF THE DRAWINGS FIG. FIG. 1 shows an embodiment of a package for accommodating an electronic component according to the present invention, in which 1 is an insulating base made of an electrically insulating material, and 2 is a lid also made of an electrically insulating material. This insulating base 1
The lid 2 constitutes a container 4 for accommodating electronic components 3 such as semiconductor elements.
【0009】前記絶縁基体1にはその上面中央部に半導
体素子等の電子部品3を収容するための空所を形成する
段状の凹部1aが設けられており、該凹部1a底面には電子
部品3 がエポキシ樹脂等の接着剤を介して取着される。The insulating substrate 1 is provided with a stepped recess 1a in the center of the upper surface thereof for forming a space for accommodating an electronic component 3 such as a semiconductor element, and the bottom of the recess 1a is provided with an electronic component. 3 is attached via an adhesive such as an epoxy resin.
【0010】また前記絶縁基体1 には凹部1aの周辺より
容器4 の外部にかけて複数個のメタライズ配線層5 が被
着形成されており、該メタライズ配線層5 の凹部1a周辺
部には電子部品3 の電極がボンディングワイヤ6 を介し
て電気的に接続され、また容器4 の外部に導出された部
位には外部電気回路に接続される外部リード端子7 が銀
ロウ等のロウ材を介し取着される。A plurality of metallized wiring layers 5 are formed on the insulating substrate 1 from the periphery of the concave portion 1a to the outside of the container 4, and electronic components 3 are formed around the concave portion 1a of the metallized wiring layer 5. Are electrically connected via bonding wires 6, and external lead terminals 7 connected to an external electric circuit are attached to a portion led out of the container 4 via a brazing material such as silver brazing. You.
【0011】前記絶縁基体1 は、例えば酸化アルミニウ
ム質焼結体等の電気絶縁材料から成り、酸化アルミニウ
ム(Al 2 O 3 ) 、シリカ(SiO2 ) 、カルシア(CaO) 、マ
グネシア(MgO) 等の原料粉末に適当な有機溶剤、溶媒を
添加混合して泥漿状となすとともにこれを従来周知のド
クターブレード法やカレンダーロール法等を採用するこ
とによってセラミックグリーンシート( セラミック生シ
ート) を得、しかる後、前記セラミックグリーンシート
に適当な打ち抜き加工を施すとともに複数枚積層し、高
温で焼成することによって製作される。The insulating substrate 1 is made of an electrically insulating material such as an aluminum oxide sintered body, and is made of aluminum oxide (Al 2 O 3 ), silica (SiO 2 ), calcia (CaO), magnesia (MgO) or the like. A ceramic green sheet (ceramic green sheet) is obtained by adding a suitable organic solvent and a solvent to the raw material powder to form a slurry by mixing and using a conventionally known doctor blade method or calender roll method. The ceramic green sheet is manufactured by subjecting the ceramic green sheet to appropriate punching, laminating a plurality of sheets, and firing at a high temperature.
【0012】また前記メタライズ配線層5 はタングステ
ン、モリブデン、マンガン等の高融点金属粉末から成
り、タングステン等の高融点金属粉末に適当な有機溶
剤、溶媒を添加混合して得た金属ペーストを絶縁基体1
となるセラミックグリーンシートに予め従来周知のスク
リーン印刷法により所定パターンに印刷塗布しておくこ
とによって絶縁基体1 の凹部1a周辺から容器4 の外部に
導出するよう被着形成される。The metallized wiring layer 5 is made of a high melting point metal powder such as tungsten, molybdenum or manganese. A metal paste obtained by adding a suitable organic solvent or a solvent to the high melting point metal powder such as tungsten is used as an insulating substrate. 1
The ceramic green sheet is printed and applied in a predetermined pattern by a conventionally known screen printing method, so that the ceramic green sheet is adhered and formed so as to be led out of the container 4 from around the concave portion 1a of the insulating substrate 1.
【0013】尚、前記メタライズ配線層5 はその露出す
る表面にニッケル、金等の耐蝕性に優れ、且つロウ材と
濡れ性の良い金属をメッキ法等により1.0 乃至20.0μm
の厚みに層着させておくと、メタライズ配線層5 の酸化
腐食を有効に防止することができるとともにメタライズ
配線層5 へのボンディングワイヤ6 の接合及びメタライ
ズ配線層5 への外部リード端子7 のロウ付けが極めて強
固となる。従って、メタライズ配線層5 の酸化腐食を防
止し、且つメタライズ配線層5 にボンディングワイヤ6
及び外部リード端子7 を強固に接合させるにはメタライ
ズ配線層5 の露出表面にニッケル、金等を1.0 乃至20.0
μm の厚みに層着させておくことが好ましい。The exposed surface of the metallized wiring layer 5 is coated with a metal having excellent corrosion resistance such as nickel and gold and a good wettability with a brazing material by a plating method or the like to a thickness of 1.0 to 20.0 μm.
When the metallized wiring layer 5 is layered, the oxidation corrosion of the metallized wiring layer 5 can be effectively prevented, and the bonding of the bonding wire 6 to the metallized wiring layer 5 and the soldering of the external lead terminals 7 to the metallized wiring layer 5 can be prevented. The attachment becomes extremely strong. Therefore, oxidation corrosion of the metallized wiring layer 5 is prevented, and the bonding wire 6 is formed on the metallized wiring layer 5.
In order to bond the external lead terminals 7 firmly, nickel or gold is applied to the exposed surface of the metallized wiring layer 5 by 1.0 to 20.0.
It is preferable to coat the layer to a thickness of μm.
【0014】更に前記メタライズ配線層5 にロウ付けさ
れる外部リード端子7 は容器内部に収容する電子部品3
を外部電気回路に接続する作用を為し、外部リード端子
7 を外部電気回路に接続することによって内部に収容さ
れる電子部品3 はメタライズ配線層5 及び外部リード端
子7 を介し外部電気回路と電気的に接続されることとな
る。Further, the external lead terminals 7 brazed to the metallized wiring layer 5 are used for the electronic components 3 housed inside the container.
To the external electrical circuit
7 is connected to an external electric circuit, so that the electronic component 3 housed therein is electrically connected to the external electric circuit via the metallized wiring layer 5 and the external lead terminals 7.
【0015】前記外部リード端子7 はコバール金属( 鉄
ーニッケルーコバルト合金) や42アロイ( 鉄ーニッケル
合金) 等の金属材料から成り、例えばコバール金属等の
インゴット( 塊) に圧延加工法や打ち抜き加工法等、従
来周知の金属加工法を施すことによって所定の板状に形
成される。The external lead terminal 7 is made of a metal material such as Kovar metal (iron-nickel-cobalt alloy) or 42 alloy (iron-nickel alloy). It is formed into a predetermined plate shape by applying a conventionally known metal working method such as a method.
【0016】また前記外部リード端子7 はその表面にニ
ッケル、金等の耐蝕性に優れ、且つロウ材と濡れ性の良
い金属をメッキ法等により1.0 乃至20.0μm の厚みに層
着させておくと、外部リード端子7 の酸化腐食を有効に
防止することができるとともに外部リード端子7 の外部
電気回路への接続が確実、強固となる。従って、前記外
部リード端子7 は酸化腐食等を有効に防止するために表
面にニッケル、金等を1.0 乃至20.0μm の厚みに層着さ
せておくことが好ましい。The external lead terminal 7 is preferably formed by plating a metal having excellent corrosion resistance, such as nickel and gold, and a good wettability with a brazing material to a thickness of 1.0 to 20.0 μm on a surface thereof by plating or the like. In addition, the oxidative corrosion of the external lead terminals 7 can be effectively prevented, and the connection of the external lead terminals 7 to the external electric circuit is reliably and firmly made. Therefore, it is preferable that nickel, gold or the like is layered on the surface of the external lead terminal 7 to a thickness of 1.0 to 20.0 μm in order to effectively prevent oxidation corrosion and the like.
【0017】前記絶縁基体1 は更にその上面に環状の金
属層8 が被着されており、該金属層8 には蓋体2 がロウ
材9 を介して接合され、これによって容器4 の内部に電
子部品3 が気密に封止される。The insulating substrate 1 is further provided with an annular metal layer 8 on its upper surface, and a lid 2 is joined to the metal layer 8 via a brazing material 9, whereby the inside of the container 4 is The electronic component 3 is hermetically sealed.
【0018】前記絶縁基体1 の上面に被着させた環状金
属層8 は、例えばタングステン、モリブデン、マンガン
等の高融点金属粉末から成り、該高融点金属粉末に有機
溶剤、溶媒を添加混合して得た金属ペーストを絶縁基体
1 となるセラミックグリーンシートに従来周知のスクリ
ーン印刷法を採用することによって印刷塗布しておき、
セラミックグリーンシートを高温で焼成し、絶縁基体1
となす際に同時に絶縁基体1 の上面に被着される。The annular metal layer 8 adhered to the upper surface of the insulating base 1 is made of a high melting point metal powder such as tungsten, molybdenum, manganese or the like. An organic solvent and a solvent are added to the high melting point metal powder and mixed. The obtained metal paste is used as an insulating substrate.
The ceramic green sheet that becomes 1 is printed and applied by adopting the conventionally known screen printing method,
The ceramic green sheet is fired at a high temperature,
At the same time, it is adhered to the upper surface of the insulating base 1.
【0019】尚、前記環状金属層8 の表面にはロウ材9
との濡れ性を改善するためにニッケルから成る層と金か
ら成る層が順次層着されている。The surface of the annular metal layer 8 has a brazing material 9
A layer made of nickel and a layer made of gold are sequentially deposited in order to improve the wettability.
【0020】また前記絶縁基体1 の上面に接合される蓋
体2 は酸化アルミニウム質焼結体等の電気絶縁材料から
成り、その下面外周部に予め環状の金属層10を被着させ
ておき、該環状金属層10を絶縁基体1 上面の金属層8 に
ロウ材9 を介し接合させることによって蓋体2 は絶縁基
体1 に接合される。The lid 2 joined to the upper surface of the insulating base 1 is made of an electrically insulating material such as an aluminum oxide sintered body, and an annular metal layer 10 is previously applied to the outer periphery of the lower surface thereof. The lid 2 is joined to the insulating base 1 by joining the annular metal layer 10 to the metal layer 8 on the upper surface of the insulating base 1 via a brazing material 9.
【0021】前記蓋体2 は、例えば酸化アルミニウム(A
l 2 O 3 ) 、シリカ(SiO2 ) 、カルシア(CaO) 、マグネ
シア(MgO) 等の原料粉末を所定のプレス型内に充填させ
るとともにこれを一定圧力で押圧して成形し、しかる
後、前記成形品を約1500℃の温度で焼成することによっ
て製作される。The lid 2 is made of, for example, aluminum oxide (A
l 2 O 3 ), silica (SiO 2 ), calcia (CaO), magnesia (MgO), etc., are filled in a predetermined press mold and pressed at a constant pressure to be molded. It is manufactured by firing a molded article at a temperature of about 1500 ° C.
【0022】前記蓋体2 はまたその下面外周部に環状金
属層10が被着されており、該環状金属層10はタングステ
ンやマンガン等の高融点金属粉末、或いは銀ーパラジウ
ム等の金属から成り、タングステン等の粉末に有機溶
剤、溶媒を添加混合して得た金属ペーストを蓋体2 と成
る成形体に予めスクリーン印刷法により印刷塗布してお
くことによって、或いは成形品を焼成して得た蓋体2 の
下面にスクリーン印刷法により印刷塗布し、これを焼き
付けることによって蓋体2 の下面外周部に被着される。The lid 2 is further provided with an annular metal layer 10 on the outer periphery of the lower surface thereof. The annular metal layer 10 is made of a high melting point metal powder such as tungsten or manganese, or a metal such as silver-palladium. A metal paste obtained by adding and mixing an organic solvent and a solvent to a powder of tungsten or the like is preliminarily printed and applied by a screen printing method to a molded body to be the lid 2, or a lid obtained by firing a molded article. The lower surface of the body 2 is printed and applied by a screen printing method, and is baked to be attached to the outer peripheral portion of the lower surface of the lid 2.
【0023】尚、前記環状金属層10は銀70.0乃至95.0重
量%、パラジウム5.0 乃至30.0重量%から成る銀ーパラ
ジウムで形成すると金属層10の蓋体2 に対する被着強度
を強固として、且つ金属層10に対するロウ材9 の濡れ性
を極めて良好なものとなすことができる。従って、絶縁
基体1 と蓋体2 とから成る容器3 の気密封止の信頼性を
高いものとするには蓋体2 に被着させ金属層10を銀70.0
乃至95.0重量%、パラジウム5.0 乃至30.0重量%から成
る銀ーパラジウムで形成するのが好ましい。When the annular metal layer 10 is formed of silver-palladium comprising 70.0 to 95.0% by weight of silver and 5.0 to 30.0% by weight of palladium, the adhesion strength of the metal layer 10 to the cover 2 is increased, and The wettability of the brazing material 9 can be made very good. Therefore, in order to increase the reliability of hermetic sealing of the container 3 composed of the insulating base 1 and the lid 2, the metal layer 10 is adhered to the lid 2 and the silver
To 95.0% by weight, and 5.0 to 30.0% by weight of palladium.
【0024】また前記蓋体2 に被着させた環状金属層10
には絶縁基体1 と蓋体2 との接合の作業性を向上させる
ためにロウ材9 が予め接合されており、該ロウ材9 の蓋
体2に被着させた金属層10への接合はロウ材9 を構成す
る半田等の粉末に有機溶剤、溶媒を添加混合して得た半
田ペーストを蓋体2 に被着させた金属層10に従来周知の
スクリーン印刷法により印刷し、しかる後、これを約35
0 〜400 ℃の温度で短時間、リフローすることによって
行われる。The annular metal layer 10 attached to the lid 2
In order to improve the workability of joining the insulating base 1 and the lid 2, a brazing material 9 is previously joined, and the joining of the brazing material 9 to the metal layer 10 adhered to the lid 2 is An organic solvent is added to a powder of solder or the like constituting the brazing material 9, and a solder paste obtained by adding and mixing a solvent is printed on the metal layer 10 adhered to the lid 2 by a conventionally known screen printing method, and thereafter, About 35
This is performed by reflowing at a temperature of 0 to 400 ° C. for a short time.
【0025】前記ロウ材9 は半田等の低融点ロウ材が使
用され、絶縁基体1 の上面に被着させた金属層8 と蓋体
2 の下面に被着させた金属層10とを接合させることによ
って容器3 の内部を気密に封止する作用を為す。As the brazing material 9, a low melting point brazing material such as solder is used, and the metal layer 8 and the lid are attached to the upper surface of the insulating base 1.
By joining the metal layer 10 adhered to the lower surface of the container 3, the inside of the container 3 is air-tightly sealed.
【0026】また前記ロウ材9 はその内部に無機物粉末
が埋入されており、該無機物粉末は絶縁基体1 に被着さ
せた環状の金属層8 と蓋体2 に被着させた環状の金属層
10とを半田等のロウ材9 を介して接合させる際、絶縁基
体1 と蓋体2 との間に所定の空隙を形成するとともに両
者間に所定量のロウ材9 が介在するように作用を為し、
これによって絶縁基体1 の環状金属層8 と蓋体2 の環状
金属層10とはロウ材9を介して強固に接合され、絶縁基
体1 と蓋体2 とから成る容器4 内部に電子部品3 が完全
に気密封止される。The brazing material 9 has an inorganic powder embedded therein, and the inorganic powder is composed of an annular metal layer 8 attached to the insulating base 1 and an annular metal layer attached to the lid 2. layer
When the soldering material 10 is joined with the brazing material 9 such as solder, a predetermined gap is formed between the insulating base 1 and the lid 2 and an action is taken such that a predetermined amount of the brazing material 9 is interposed between the two. Do
As a result, the annular metal layer 8 of the insulating base 1 and the annular metal layer 10 of the lid 2 are firmly joined via the brazing material 9, and the electronic component 3 is placed inside the container 4 composed of the insulating base 1 and the lid 2. Completely hermetically sealed.
【0027】前記ロウ材9 中に埋入される無機物粉末は
シリカ(SiO2 ) 、アルミナ(Al 2 O3 ) 、酸化ホウ素(B
2 O 3 ) 等から成り、該シリカやアルミナ等の無機物粉
末は半田等のロウ材9 と一切反応せず、ロウ材9 の特性
に変化を与えることがないことから絶縁基体1 の環状金
属層8 及び蓋体2 の環状金属層10との強固な接合を維持
したまま絶縁基体1 と蓋体2 との間に介在されるロウ材
9 の量を制御することができる。The inorganic powder embedded in the brazing material 9 is silica (SiO 2 ), alumina (Al 2 O 3 ), boron oxide (B
2 O 3 ), etc., and the inorganic powder such as silica or alumina does not react at all with the brazing material 9 such as solder and does not change the properties of the brazing material 9. 8 and the brazing material interposed between the insulating base 1 and the lid 2 while maintaining the strong bonding of the lid 2 and the annular metal layer 10.
9, you can control the quantity.
【0028】尚、前記ロウ材9 中に埋入される無機物粉
末はその埋入量が1.0 重量%未満であると絶縁基体1 と
蓋体2 とをロウ材9 を介して接合させる際、絶縁基体1
と蓋体2 との間に介在するロウ材9 の量が少なくなって
両者を強固に接合させるのが困難になってしまう傾向に
あり、また20.0重量%を越えると絶縁基体1 と蓋体2と
をロウ材9 を介して接合させる際、絶縁基体1 及び蓋体
2 の環状金属層8 、10とロウ材9 との接触が無機物粉末
で阻害されて絶縁基体1 と蓋体2 とを強固に接合させる
のが困難となる傾向にあることから前記ロウ材9 中に埋
入される無機物粉末はその埋入量が1.0 乃至20.0重量%
の範囲としておくことが好ましい。If the amount of the inorganic powder to be embedded in the brazing material 9 is less than 1.0% by weight, when the insulating base 1 and the cover 2 are joined via the brazing material 9, Substrate 1
The amount of the brazing material 9 interposed between the cover member 2 and the cover member 2 tends to be small, so that it is difficult to firmly join the two. If it exceeds 20.0% by weight, the insulating base 1 and the cover member 2 Are joined together via the brazing material 9, the insulating base 1 and the lid
Since the contact between the annular metal layers 8 and 10 and the brazing material 9 tends to be hindered by the inorganic powder and it becomes difficult to firmly join the insulating base 1 and the lid 2, the brazing material 9 The amount of the inorganic powder to be embedded is 1.0 to 20.0% by weight
Is preferably set in the range.
【0029】また前記ロウ材9 中に埋入される無機物粉
末はその粒径が5.0 μm 未満であると絶縁基体1 と蓋体
2 とをロウ材9 を介して接合させる際、絶縁基体1 と蓋
体2との間に形成される空隙が狭くなり、ロウ材9 の量
が少なくなって両者を強固に接合させるのが困難になっ
てしまう傾向にあり、また70.0μm を越えると絶縁基体
1 と蓋体2 とを接合させるロウ材9 中に空孔が形成さ
れ、容器4 の気密封止の信頼性が低下する傾向にあるこ
とから前記ロウ材9 中に埋入される無機物粉末はその粒
径を5.0 乃至70.0μm の範囲としておくことが好まし
い。When the inorganic powder embedded in the brazing material 9 has a particle size of less than 5.0 μm, the insulating substrate 1 and the lid
When the brazing material 2 is joined via the brazing material 9, the gap formed between the insulating base 1 and the lid 2 is narrowed, and the amount of the brazing material 9 is reduced, so that it is difficult to firmly join the two. When the thickness exceeds 70.0 μm,
Since holes are formed in the brazing material 9 that joins 1 and the lid 2, and the reliability of hermetic sealing of the container 4 tends to decrease, the inorganic powder embedded in the brazing material 9 is It is preferable that the particle size is in the range of 5.0 to 70.0 μm.
【0030】かくして上述の電子部品収納用パッケージ
によれば、絶縁基体1 の凹部1a底面に電子部品3 を接着
剤を介して取着するとともに電子部品3 の各電極をメタ
ライズ配線層5 にボンディングワイヤ6 を介して電気的
に接続し、しかる後、絶縁基体1 の上面に蓋体2 をロウ
材9 により接合させ、容器3 の内部に電子部品3 を気密
に封止することによって製品としての電子装置となる。Thus, according to the above-described electronic component storage package, the electronic component 3 is attached to the bottom surface of the concave portion 1a of the insulating base 1 via an adhesive, and each electrode of the electronic component 3 is bonded to the metallized wiring layer 5 by a bonding wire. 6 and then the lid 2 is joined to the upper surface of the insulating base 1 with a brazing material 9, and the electronic component 3 is hermetically sealed inside the container 3. Device.
【0031】尚、本発明は上述の実施例に限定されるも
のではなく、本発明の要旨を逸脱しない範囲であれば種
々の変更は可能であり、例えば、上述の実施例では蓋体
2 に被着させた金属層10を銀ーパラジウムで形成した
が、これを銀ー白金で形成してもよい。It should be noted that the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the gist of the present invention.
Although the metal layer 10 adhered to 2 is formed of silver-palladium, it may be formed of silver-platinum.
【0032】また前記ロウ材9 は半田等の低融点ロウ材
が使用されるが特に、錫、インジウムの少なくとも1 種
を1.0 乃至10.0重量%、銀を1.0 乃至10.0重量%、残部
を鉛として合金を使用するとロウ材9 の溶融温度を低い
ものとして、且つ絶縁基体1及び蓋体2 に被着させた金
属層8 、10の両者に濡れ性を良好として強固に接合させ
ることができる。As the brazing material 9, a low melting point brazing material such as solder is used. In particular, at least one of tin and indium is 1.0 to 10.0% by weight, silver is 1.0 to 10.0% by weight, and the balance is lead. By using this, the melting temperature of the brazing material 9 can be lowered, and the metal layers 8 and 10 adhered to the insulating base 1 and the lid 2 can be firmly bonded to each other with good wettability.
【0033】更に上述の実施例ではロウ材9 を蓋体2 に
被着させた金属層10に予め接合させたが、絶縁基体1 に
被着させた金属層8 に予め接合させておいてもよい。Further, in the above-described embodiment, the brazing material 9 is previously joined to the metal layer 10 attached to the lid 2, but may be joined to the metal layer 8 attached to the insulating base 1 in advance. Good.
【0034】[0034]
【発明の効果】本発明の電子部品収納用パッケージによ
れば、絶縁基体の環状金属層と蓋体の環状金属層とを接
合させるロウ材に無機物粉末を埋入させたことから絶縁
基体に被着させた環状の金属層と蓋体に被着させた環状
の金属層とを半田等のロウ材を介して接合させる際、絶
縁基体と蓋体との間に無機物粉末によって所定の空隙が
形成されるとともに両者間に所定量のロウ材が介在する
こととなり、その結果、絶縁基体の環状金属層と蓋体の
環状金属層とのロウ材を介して接合が極めて強固とな
り、絶縁基体と蓋体とから成る容器内部に電子部品を完
全に気密封止することができる。According to the electronic component housing package of the present invention, the inorganic powder is embedded in the brazing material for joining the annular metal layer of the insulating base and the annular metal layer of the lid, so that the insulating base can be covered. When joining the attached annular metal layer and the annular metal layer attached to the lid via a brazing material such as solder, a predetermined gap is formed by the inorganic powder between the insulating base and the lid. As a result, a predetermined amount of brazing material is interposed between the two, and as a result, the bonding between the annular metal layer of the insulating base and the annular metal layer of the lid becomes extremely strong via the brazing material, and The electronic component can be completely hermetically sealed inside the container including the body.
【図1】本発明の電子部品収納用パッケージの一実施例
を示す断面図である。FIG. 1 is a cross-sectional view showing an embodiment of an electronic component storage package according to the present invention.
1・・・・・絶縁基体 2・・・・・蓋体 3・・・・・半導体素子 4・・・・・容器 5・・・・・メタライズ配線層 7・・・・・外部リード端子 8、10・・環状金属層 9・・・・・ロウ材 DESCRIPTION OF SYMBOLS 1 ... Insulating base 2 ... Lid 3 ... Semiconductor element 4 ... Container 5 ... Metallized wiring layer 7 ... External lead terminal 8 ····· Circular metal layer 9 ···· Brazing material
Claims (3)
基体と下面外周部に環状金属層を被着させた蓋体とから
成り、絶縁基体に被着させた環状金属層と蓋体に被着さ
せた環状金属層とをロウ材を介し接合させることによっ
て内部に電子部品を気密に収容するようになした電子部
品収納用パッケージであって、前記絶縁基体の環状金属
層と蓋体の環状金属層とを接合させるロウ材に無機物粉
末が埋入されていることを特徴とする電子部品収納用パ
ッケージ。An insulating base having an annular metal layer attached to an outer peripheral portion thereof; and a lid having an annular metal layer attached to a lower peripheral portion. The annular metal layer and the lid attached to the insulating substrate. An electronic component housing package in which an electronic component is hermetically housed by joining an annular metal layer adhered to a body via a brazing material, wherein the annular metal layer of the insulating base and a lid are provided. An electronic component storage package, characterized in that an inorganic powder is embedded in a brazing material for bonding to an annular metal layer of a body.
量%であることを特徴とする請求項1に記載の電子部品
収納用パッケージ。2. The electronic component storage package according to claim 1, wherein the amount of the inorganic powder embedded is 1.0 to 20.0% by weight.
であることを特徴とする請求項1に記載の電子部品収納
用パッケージ。3. The inorganic powder has a particle size of 5.0 to 70.0 μm.
The electronic component storage package according to claim 1, wherein:
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5025193A JP2750255B2 (en) | 1993-02-15 | 1993-02-15 | Electronic component storage package |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5025193A JP2750255B2 (en) | 1993-02-15 | 1993-02-15 | Electronic component storage package |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH06244296A JPH06244296A (en) | 1994-09-02 |
JP2750255B2 true JP2750255B2 (en) | 1998-05-13 |
Family
ID=12159133
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5025193A Expired - Fee Related JP2750255B2 (en) | 1993-02-15 | 1993-02-15 | Electronic component storage package |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2750255B2 (en) |
-
1993
- 1993-02-15 JP JP5025193A patent/JP2750255B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH06244296A (en) | 1994-09-02 |
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