JP2601085B2 - Functional electron-emitting device and method of manufacturing the same - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a functional electron-emitting device which utilizes a field emission phenomenon of electrons and is used as a three-terminal device having functions such as signal amplification, modulation and switching.

[0002]

2. Description of the Related Art Recently, with the development of microfabrication technology, research and development on minute electron-emitting devices, so-called cold cathodes, have been actively conducted. Has attracted attention because of its various advantages. In a field emission type electron-emitting device, the curvature of the tip of the emitter is set to several hundred nm in order to emit electrons.
Needle processing is performed so that
Electrons are emitted by concentrating a strong electric field of about ⁷ V / cm.

As a new device using the above-mentioned minute electron-emitting device, a field-emission vacuum transistor having a configuration shown in IEDM86, 33.1, pp. 776 has been proposed. The configuration will be described with reference to the cross-sectional view shown in FIG.

In FIG. 11, Si is used as a substrate 100, and the substrate 100 is processed to form a conical emitter 101 as an electron emitting portion. Substrate 10
On the insulating layer 102, an insulating layer 102 made of SiO ₂ is formed outside the emitter 101.
The gate 103 and the collector 104 are sequentially formed at predetermined intervals with respect to 1. And the emitter 100
, Gate 103 and signal input unit 105 and bias power supply 10
6 is connected, and a load resistor 107 and a collector power supply 108 are connected to the emitter 101 and the collector 104.

In the above-described configuration, an appropriate bias voltage is applied between the gate 103 and the emitter 101 by the bias power supply 106 and the voltage of the signal input unit 105 is changed. Is the sum of the bias voltage and the input signal voltage,
Electrons 111 can be emitted from emitter 101 according to the combined voltage. At this time, the collector power supply 10
By applying a sufficient voltage to 8, electrons 111 emitted into a vacuum can be taken into the collector 104, and as a result, power flows through the resistor 107 and the terminal 109.
And a voltage change occurs between 110 and 110. That is, the voltage of the output terminal 110 of the collector 104 can be changed according to the voltage change of the signal input unit 105, and a kind of transistor operation or switching operation can be performed. In a normal transistor, electrons travel in a solid, whereas in the electron-emitting device, electrons travel in a vacuum, so that high-speed operation is possible.

[0006] As another example of a new device using the above-mentioned minute electron-emitting device, as shown in FIG. 12 shown in the 51st Annual Meeting of the Japan Society of Applied Physics, (1990) p1209. A three-pole element having a configuration has been proposed.
In FIG. 12, FIG. 12A is a plan view of the triode, and FIG. 12B is a cross-sectional view along the line AA. The configuration will be described below with reference to FIG. A wedge-shaped emitter 52 on a substrate 51, and a gate 53 formed at a predetermined interval from the tip of the emitter 52 and partially processed into a columnar shape
And an anode 54 formed at a predetermined distance from the gate 53 on the side opposite to the emitter 52. The anode 52 and the gate 53, and the gate 53 and the anode 54
Is partially removed.

Next, a method of fabricating the same will be described with reference to FIGS. As shown in FIG.
A tungsten (W) thin film 62 is formed thereon, and a resist 63 is further formed thereon in a predetermined shape. Next, FIG.
As shown in (b), the W thin film 62 is formed using the resist 63 as a mask.
Is etched. Next, as shown in FIG. 13C, a resist 65 is formed again to process a part of the gate 53 into a columnar shape.
Is formed in a predetermined shape, and then the W thin film 62 is etched again as shown in FIG. Thus, the emitter 52, the gate 53, and the anode 54 are formed, and finally, as shown in FIG. 13E, a part of the substrate is etched.

Next, the operation of the triode constructed as described above will be described. In FIG. 13, a voltage is applied between the emitter 52 and the gate 53 so that the emitter 52 becomes negative and the gate 53 becomes positive. When a predetermined electric field or more is applied to the emitter 52, electrons are emitted from the emitter 52. When the applied voltage is changed, the amount of emitted electrons can be changed. By applying a sufficient voltage to the anode 54, electrons emitted from the emitter 52 can be reduced.
4 can be captured. That is, the amount of electrons flowing into the anode 54 can be changed by changing the voltage between the emitter 52 and the gate 53, and a kind of transistor operation or switching operation can be performed. Furthermore, while electrons travel in a solid state in a normal transistor, the electrons in this device travel in a vacuum, so that high-speed operation is possible.

[0009]

However, in the former of the above-mentioned conventional examples, in the former, a semiconductor is used as an emitter material, and the emitter 101 is processed by anisotropic etching utilizing the characteristic property of the material. I have. As described above, since the emitter material is a semiconductor, the work function is higher and the electron emission amount is smaller than that of the metal material.
As a result, there is a problem that the signal output becomes small, and the characteristics as a device such as a vacuum transistor element or a switching element cannot be fully utilized.

In the latter, the operating voltage is high,
Further, since resist patterning is performed twice in the device manufacturing method, alignment is required, and a high-level fine processing technique is required. Therefore, there is a problem with respect to reproducibility of the device and stability of characteristics.

An object of the present invention is to solve the above-mentioned problems of the prior art. By using a material having a low work function as the emitter, it is possible to reduce the operating voltage and increase the amount of electron emission. Therefore, the signal output can be increased and the S / N can be improved.
It is another object of the present invention to provide a functional electron-emitting device that can be manufactured easily and can improve the yield, and a manufacturing method capable of producing a device with good reproducibility and characteristics.

[0012]

The technical means of the present invention for solving the above-mentioned problems is to provide a substrate and a substrate formed on the substrate, wherein at least a part of the width gradually changes in a plane.
An emitter portion having a wedge-shaped portion;
An insulating layer formed at a predetermined distance from the
Formed at a predetermined distance from the emitter on the insulating layer
Is almost parallel to the edge of the wedge-shaped part of the emitter.
A gate part having an edge part, and the gate on the insulating layer.
A predetermined distance from the emitter section on the side opposite to the emitter section.
And a collector portion formed by the above method.

Alternatively, a substrate, a conductive layer formed in a predetermined shape on the substrate, and electrically connected to the conductive layer
Has a wedge-shaped part whose width gradually changes in a flat plane
And a predetermined distance from the emitter section.
An insulating layer formed on the insulating layer;
Wedge-shaped emitter section formed at a predetermined distance from
Gate having an edge substantially parallel to the edge of the part
And a collector portion formed on the insulating layer at a predetermined distance from the gate portion on a side opposite to the emitter portion.

Alternatively, the substrate is formed of a conductive material.
And exposing a predetermined portion of the substrate on the substrate and isolating the substrate.
An edge layer is provided, and the emitter portion is connected to the conductive portion by the exposed portion.
Partial width in a plane electrically connected to the conductive substrate
An emitter portion having a wedge-shaped portion that gradually changes, an insulating layer formed at a predetermined interval from the emitter portion, and an emitter portion formed at a predetermined interval from the emitter portion on the insulating layer . Almost parallel to the edge of the wedge
A gate portion having an edge portion ; and a collector portion formed on the insulating layer at a predetermined distance from the gate portion on a side opposite to the emitter portion.

[0015] Or, a substrate, formed on the substrate,
Wedge-like shape with gradually changing width at least in a plane
An emitter portion having a portion, and the emitter portion on the substrate
Insulating layer formed in a predetermined shape at a predetermined distance from
And an emitter formed at a predetermined portion on the insulating layer.
Has an edge almost parallel to the edge of the wedge-shaped part
A gate portion, and the emitter portion with respect to the gate portion.
A chip formed on the substrate at a predetermined interval on the opposite side
And a rectifier unit .

[0016]

[0017]

In each of the above technical means, the voltage between the gate and the emitter may be changed by an input signal to obtain an output signal from the collector.

Then, a first conductive layer is formed on the substrate,
On the first conductive layer, a wedge-shaped portion having a width that is gradually changed at least in a plane is formed, and a coating material having a predetermined shape is formed at a predetermined interval from the wedge-shaped portion. Etching the first conductive layer as a mask by a predetermined distance smaller than the coating material, and sequentially forming an insulating layer and a second conductive layer on predetermined portions of the substrate and the coating material; Is removed to remove the insulating layer and the second conductive layer on the covering material.

[0020]

Therefore, according to the present invention, by inputting a voltage from the signal input section while a predetermined voltage is applied between the emitter section and the gate section, electrons are emitted from the emitter section according to the combined voltage. It can be released, by previously applying a predetermined voltage to the further collector <br/> Kuta unit may accept emitted electrons efficiently, by changing the voltage of the output terminal of the collector portion Can be . That is, input
An electrode that has the function of modulating the collector voltage according to the signal
An electron-emitting device can be obtained. Further, since the emitter section can be formed of a different material from the substrate , the
By using a low number of materials , the operating voltage can be reduced and the amount of electron emission can be increased. Further, it can be easily manufactured by a vapor deposition technique and a simple lithography technique.

Further, according to the present invention, the spacing between the emitter and the gate and the spacing between the gate and the collector can be reduced by the above configuration, so that the operating voltage of the functional electron-emitting device can be reduced and the characteristics can be stabilized. Performance can be improved.

In the manufacturing method, since the resist is patterned only once in the manufacturing process and self-alignment is used, it is possible to easily obtain a highly reproducible functional electron-emitting device. can, and Delahaye spacing between spacing and the gate and the anode of the emitter and gate
Since a side etching width by the etching is used, a manufacturing method with extremely high controllability is provided, and an element having stable characteristics can be obtained. In particular, the emitter
Game with edge substantially parallel to edge of wedge
Operation at low voltage.
Even if a small signal input is input from the signal input section,
Machine that can obtain a sufficient output signal in the
A functional electron-emitting device.

[0023]

(Embodiment 1) Hereinafter, a first embodiment of the present invention will be described with reference to the drawings.

FIGS. 1A and 1B show a functional electron-emitting device according to a first embodiment of the present invention. FIG. 1A is a plan view and FIG. 1B is FIG. 1A is a cross-sectional view taken along the line AA of FIG. 1 (in the plan view of FIG. 1A, each part corresponding to FIG. 1B is hatched in the same direction for easy understanding).

As shown in FIGS. 1A and 1B, an emitter 2 is formed on an insulating substrate (a metallic substrate may be used) 1 made of glass, ceramics or the like. This emitter 2 is composed of Mo, Ta, W, ZrC, LaB
_{It is made of a} material having a low work function such as _{6 and} has a shape in which at least a part thereof is gradually and linearly narrowed so that the tip 2a has a sharply formed so-called wedge-shaped portion. SiO ₂ , Si ₃ N ₄ , Al ₂ O are provided on the substrate 1 at a predetermined distance from the wedge-shaped portion of the emitter 2.
₃ , an insulating layer 3 made of Ta ₂ O ₅ or the like is formed. On the insulating layer 3, at least the wedge-shaped portion of the emitter 2
Mo, Ta, Cr, A at predetermined intervals outside
A gate 4 made of l, Au, or the like is formed, and a collector 5 made of Mo, Ta, Cr, Al, Au, or the like is formed on the gate 4 at a predetermined interval on the side opposite to the emitter 2. ing. 6 and 7 are emitter 2 and gate 4
Bias power supply and signal input section connected between
Is a collector power supply and a resistor connected between the emitter 2 and the collector 5, 10 and 11 are terminals, and 12 is electrons emitted from the tip 2a of the emitter 2.

The operation of the above configuration will be described below. As described above, for example, the bias power supply 6 and the signal input unit 7 are connected between the emitter 2 and the gate 4,
Collector power supply 8 and resistor 9 between emitter 2 and collector 5
First, an appropriate bias voltage is applied between the emitter 2 and the gate 4 by the bias power supply 6. Next, when an appropriate voltage is input from the signal input unit 7, the voltage between the emitter 2 and the gate 4 becomes the sum of the bias voltage and the input signal voltage, and an electric field corresponding to the combined voltage is applied to the emitter 2. Here, the electric field on each surface of the emitter 2 is a composite electric field determined by the geometrical positional relationship between the gate 4 and each surface of the emitter 2. As a result of the simulation analysis, the electric field concentrated portion of the wedge-shaped emitter 2 becomes wedge-shaped. Sharp tip 2a
I know the most concentrated and strong. Electron emission occurs due to the electric field of each part of the emitter 2 according to the combined voltage. In the wedge-shaped emitter 2, the electric field is particularly concentrated on the tip 2a as described above. 12 can be released. At this time, by applying a sufficient positive voltage to the collector power supply 8, electrons 12 released into a vacuum can be taken into the collector 5, and as a result, a current flows through the resistor 9 and the terminal 10 During 11 the voltage change occurs.
That is, an output can be taken out as a change in output voltage from the output terminal 11 of the collector 5 in accordance with a voltage change in the signal input unit 7. And as a material of the emitter 2,
Since a material having a small work function can be selected, the emission current 12 can be increased, and therefore, the signal output can be increased and the S / N can be improved.

Next, an example of a manufacturing process of the functional electron-emitting device according to the first embodiment will be described with reference to the sectional views shown in FIGS. 2A to 2E.

First, as shown in FIG.
Sputter deposition on a substrate 1 made of ceramics, etc.
Mo, Ta, W, which becomes the emitter 2 by electron beam evaporation, etc.
ZrC, thickness emitter material layer 13, such as LaB ₆ 300n
m to 1 μm, and then a predetermined pattern on the emitter material layer 13 using a lithography technique.
A μm resist 14 was formed. Next, as shown in FIG. 2B, the emitter material layer 13 is etched.
A wedge-shaped emitter 2 was formed. At this time, by selecting the condition under which the under-etching occurs, the emitter 2
Was processed such that the outer edge portion was smaller than the resist 14 by about 1 μm. Next, as shown in FIG. 2C, SiO ₂ , Si ₃ N ₄ , Ta ₂ O are formed on the substrate 1 and the resist 14 by a method such as sputter deposition, electron beam deposition, or CVD.
_An insulating layer 3 made of Mo, Ta, Cr, Al, Au, or the like, which becomes the gate 4 and the collector 5;
Were sequentially formed to a film thickness of 300 nm to 1 μm and 200 to 500 nm, respectively. Next, as shown in FIG. 2D, after the resist 14 was lifted off together with the insulating layer 3 and the conductive layer 15 thereon, the resist 16 was formed again in a predetermined pattern. Thereafter, as shown in FIG. 2E, the conductive layer 15 is etched using the resist 16 as a mask, and the resist 16 is etched.
Was removed to form a gate 4 and a collector 5. In FIG. 2E, the emitter 2 has a wedge shape having a sharp tip 2a on the left side. In this case, the tip 2a of the emitter is less than r ₁ = 0.1 μm.
Is formed so that r ₂ = 1 μm or more.

Then, a voltage of 100 to 300 V is applied to the collector 5, and 0 to 300 V is applied between the emitter 2 and the gate 4.
When a triangular wave voltage of 70 V was applied, the applied voltage was 50 V
At this point, the electrons 12 were emitted, and the emitted electrons 12 flowed into the collector 5. That is, good control of the collector current could be performed according to the potential change of the gate 4.

(Embodiment 2) Next, a second embodiment of the present invention will be described. FIGS. 3A and 3B show a functional electron-emitting device according to a second embodiment of the present invention.
3B is a plan view, and FIG. 3B is a cross-sectional view taken along the line BB of FIG. 3A. (Each part corresponding to FIG. 3B is easy to understand in the plan view of FIG. 3A. In the same direction.

As shown in FIGS. 3 (a) and 3 (b), Mo, Ta,
A conductive layer 17 made of Ti, Al, Au or the like is formed. The conductive layer 17 has a predetermined shape, for example, a shape extending from one corner of the outer end to the center. M is formed on the substrate 1 so as to be electrically connected to the center of the conductive layer 17.
An emitter 2 made of a material having a low work function, such as o, Ta, W, ZrC, LaB ₆ or the like, is formed. The emitter 2 is formed so as to have a so-called wedge-shaped portion in which at least a part of the width gradually narrows linearly and the tip 2a is sharply formed. In the illustrated example, the protrusions are formed in a cross shape that protrudes from the center in four directions, and are linearly changed so that the width of each protrusion gradually narrows toward the front end side, and each front end 2a is formed in a sharp wedge shape. Substrate 1 and conductive layer 16
On the surface of the emitter 2, SiO ₂ , Si ₃ N ₄ , Al
_An insulating layer 3 made of ₂ O ₃ , Ta ₂ O ₅ or the like is formed, and an outer end of the conductive layer 17 is exposed to be a lead end. On the insulating layer 3, Mo, Ta, Cr, Al, A
A gate 4 made of u or the like is formed. This gate 4
A part of the lead extends toward the outer end corner in a direction different from that of the conductive layer 17 and serves as a lead end. A collector 5 made of Mo, Ta, Cr, Al, Au, or the like is formed on the insulating layer 3 at a predetermined interval around the gate 4 on the side opposite to the emitter 2. Then, the conductive layer 17 is used as a lead electrode electrically connected to the emitter 2. Reference numeral 12 denotes emitted electrons emitted from the tip 2a of the emitter 2.

The operation of this embodiment is the same as that of the first embodiment, and the description thereof is omitted.

Next, an example of the manufacturing process of the functional electron-emitting device in the second embodiment will be described with reference to FIGS. 4A to 4D and FIGS. 5A to 5D. It will be described with reference to FIG.

First, as shown in FIG.
Mo, Ta, Cr, Al, Au are deposited on a substrate 1 made of ceramics or the like by sputtering evaporation, electron beam evaporation, or the like.
A conductive layer 17 having a thickness of 200 to 300 nm is formed, and a resist 18 is formed thereon in a predetermined pattern. Next, as shown in FIG. 4B, the conductive layer 17 is etched using the resist 18 as a mask, the resist 18 is removed, and then sputtering, electron beam evaporation, and CVD are performed.
Mo, Ta, Cr, W, ZrC, etc.
An emitter material layer 19 made of LaB ₆ or the like is formed to a thickness of 300 nm.
１1 μm. Next, as shown in FIG.
Resist 2 having a predetermined pattern on emitter material layer 19
0 was formed to a film thickness of 1 to 2 μm. Next, as shown in FIG. 4D, the emitter material layer 19 was etched to form a lead end portion (not shown in FIG. 2) 21 together with the emitter 2 having four projecting portions in a wedge shape. . At this time,
By over-etching the emitter material layer 19, the outer edge portion was processed so as to be smaller than the resist 20 by about 1 μm. Next, as shown in FIG. 5A, from the top of the substrate 1, the conductive layer 17 and the resist 20, SiO ₂ , S
an insulating layer 3 made of i ₃ N ₄ , Ta ₂ O ₅ or the like;
Conductive layers 22 made of Cr, Al, Au or the like were formed to a thickness of 300 nm to 1 μm and 200 to 500 nm, respectively. Next, as shown in FIG. 5B, the resist 20 is lifted off together with the insulating layer 3 and the conductive layer 22 thereon, and then, as shown in FIG. 5C, the resist 23 is again formed into a predetermined pattern. Formed. Then, as shown in FIG.
The gate 4 and the collector 5 were formed by etching the conductive layer 22 using the resist 23 as a mask and removing the resist 21. In this case, each emitter tip 2a
Is less than r ₁ = 0.1 μm, and the tip 4a of each gate is r ₂ = 0.1 μm.
It is formed to have a thickness of 1 μm or more.

In this functional electron-emitting device, similarly to the first embodiment, the current of the collector 5 could be easily controlled according to the change in the potential of the gate 4.

(Embodiment 3) Next, a third embodiment of the present invention will be described.

FIG. 6 shows a functional electron-emitting device according to a third embodiment of the present invention, and is a sectional view similar to FIG. 3B.

As shown in FIG. 6, Mo, Ta, Al, S
i on a conductive substrate 1 made of GaAs or the like.
An insulating layer 24 made of O ₂ , Si ₃ N ₄ , Ta ₂ O ₅ or the like is formed. The insulating layer 24 has a shape that exposes the conductive portion 25 at the center of the substrate 1 and the lead end 26 at the outer corner. An emitter 2 similar to that of the second embodiment is formed on the conductive portion 25 and the insulating layer 24 of the substrate 1, and is electrically connected to the substrate 1 at the conductive portion 25. In addition, since the configuration and operation of the insulating layer 3, the gate 4, the collector 5, and the like are the same as those of the second embodiment, the description thereof is omitted.

(Embodiment 4) Next, a fourth embodiment of the present invention will be described.

FIG. 7A is a plan view of a functional electron-emitting device according to a fourth embodiment of the present invention, and FIG. 7B is a cross-sectional view taken along line AA of FIG. 7A. is there. 1 is a substrate, 2
Is an emitter, 3 is an insulating layer, 4 is a gate, 5 is a collector,
Reference numeral 6 denotes a bias power supply, 7 denotes a signal input unit, 8 denotes a collector power supply, 9 denotes a resistor, 10 and 11 denote terminals, and 12 denotes emitted electrons.

As shown in FIGS. 7A and 7B, an emitter 2 is formed on an insulating substrate 1 made of glass, ceramic, or the like. This emitter 2 is composed of Mo, Ta,
It is made of a material having a low work function, such as W, ZrC, LaB ₆ , and at least a part thereof is changed so as to gradually become narrower, and the tip 2 a is formed so as to have a sharply formed so-called wedge-shaped portion. I have. Emitter 2 on substrate 1
At a predetermined distance from the wedge-shaped portion of SiO ₂ , Si
_An insulating layer 3 made of a material such as ₃ N ₄ , Al ₂ O ₃ , Ta ₂ O ₅ or the like is formed.
Gate 4 made of a material such as o, Ta, Cr, Al, Au, etc.
Are formed. Further, Mo, Mo, at a predetermined interval on the opposite side to the emitter 2 with respect to the gate 4 on the substrate 1.
A collector 5 made of a material such as Ta, Cr, Al, or Au is formed. 6 and 7 are a bias power supply and a signal input section connected between the emitter 2 and the gate 4, 8 and 9 are a collector power supply and a resistor connected between the emitter 2 and the collector 5, 10 and 11 are terminals, 12 is the tip 2a of the emitter 2
Electrons emitted from the

The operation of this embodiment is the same as that of the first embodiment, and the description thereof is omitted.

(Embodiment 5) Hereinafter, a fifth embodiment of the present invention will be described with reference to the drawings.

FIG. 8A is a plan view of a first stage of a manufacturing process of a functional electron-emitting device according to a fifth embodiment of the present invention, and FIG. It is sectional drawing which follows the A line. 9A to 9D are cross-sectional views of each manufacturing process, and FIG. 10 is a plan view of a completed stage. 1 is a substrate,
32 is a first conductive layer, 33 is a covering material, 34 is a resist,
3 is an insulating layer, 36 is a second conductive layer, 2 is an emitter, 2a
Is the emitter tip, 4 is the gate, 4a is the gate tip, 5
Shows the collector.

First, as shown in FIG. 8A and FIG. 8B, which is a cross-sectional view taken along the line AA, Mo, Ta, W,
ZrC, a first conductive layer 32 and the covering member 33 made of a material such as LaB ₆ is formed to a predetermined thickness by a method such as vacuum deposition or sputtering, followed thereon vary the width of at least a portion of gradually A photoresist 34 having a wedge-shaped portion and having a predetermined shape at a predetermined distance from the wedge-shaped portion is formed by a normal lithography technique. The covering material 3
Metal 3 or an insulator can be used as 3 and any material may be used as long as it can withstand etching of the first conductive layer 32 in a process described later and does not corrode other materials when it is removed. Next, as shown in FIG. 9A, the coating material 33 is etched using the photoresist as a mask, and then, as shown in FIG. 9B, the photoresist is removed. The one conductive layer 32 is processed by a method such as wet etching or dry etching. At this time, the first conductive layer 32 is side-etched so as to be smaller by a predetermined length than the pattern shape of the covering material 33, and the emitter 2 is processed into a wedge shape as shown in a plan view of a completed stage in FIG. ,And,
At a predetermined interval, the collector 5 is formed. Next, as shown in FIG.
₂ , an insulating layer 3 made of a material such as Si ₃ N ₄ , Al ₂ O ₃ , Ta ₂ O ₅ and a second conductive layer 36 made of a material such as Mo, Ta, Cr, Al, Au or the like are vacuum deposited or sputtered. And so on. Next, as shown in FIG. 9D, by removing the covering material 33, the insulating layer 3 and the second conductive layer 36 thereon are also removed at the same time, exposing the first conductive layer 32. . FIG. 10 shows a plan view at that time. The wedge-shaped first conductive layer 32 formed by the etching process is used as the emitter 2, and the second conductive layer 36 on the insulating layer 3 formed at a predetermined interval from the emitter 2 is used as the gate 4. The first conductive layer 32 formed at a predetermined distance from the gate 4 on the side opposite to the emitter 2 is defined as a collector 5. In this case, the emitter tip 2a has r ₁ =
The gate tip 4a is formed such that r ₂ = 1 μm or more at 0.1 μm or less.

As described above, according to the method of manufacturing a functional electron-emitting device of the present embodiment, since the resist is patterned only once, no alignment is required, and the characteristics of the functional electron-emitting device are greatly affected. Since the positional relationship between the emitter 2, the gate 4 and the collector 5 can be controlled by the side etching width at the time of etching, and self-alignment can be used, the device can be manufactured with high reproducibility and the stability of the device can be improved. it can.

[0047]

As described above, according to the present invention, a state in which a predetermined voltage is applied between the emitter and the gate.
Thus, by inputting a voltage from the signal input unit, electrons can be emitted from the emitter unit according to the combined voltage, and by applying a voltage to the collector unit, the emitted electrons can be efficiently captured. And the voltage at the output terminal of the collector section can be changed. That is,
Has the function of modulating the collector voltage according to the force signal
An electron-emitting device can be obtained. Furthermore, since the emitter section can be formed of a different material from the substrate , the
By using a material having a low function , the operating voltage can be reduced and the amount of electron emission can be increased. So
As a result, the signal output at the collector can be increased, and the S / N can be improved. Further, since the semiconductor device can be easily manufactured by a vapor deposition technique and a simple lithography technique, the yield can be improved and the reliability can be improved.

[0048] Further, because the can be narrowed well control the spacing between the spacing and the gate and the anode between the emitter and the gate, the operating voltage can be lowered, improving the properties and stability of the functional electron-emitting devices Can be.

[0049] Then, Te manufacturing process smell of the element, Regis
And the patterning of the bets only once, cell Fuara reflecting surface for utilizing <br/> bets, it is possible to obtain a good functional electronic device having easily reproducible, also interval and a gate and a collector of the emitter and gate Dry etching
The present invention provides a manufacturing method with extremely high controllability because a side etching width is used , and an element having stable characteristics can be obtained. In particular, the edge of the wedge-shaped portion of the emitter section
A gate portion having an edge portion substantially parallel to the edge portion
Therefore, operation at low voltage is possible and small signal input is possible.
Even if force is input from the signal input section,
Functional electron-emitting device that can obtain a sufficient output signal
Can be provided.

[Brief description of the drawings]

FIG. 1A is a plan view showing a functional electron-emitting device according to a first embodiment of the present invention; FIG.
Sectional view along the line

FIG. 2 is a sectional view for explaining a manufacturing process of the functional electron-emitting device according to the first embodiment of the present invention.

3A is a plan view showing a functional electron-emitting device according to a second embodiment of the present invention. FIG. 3B is a cross-sectional view taken along line BB in FIG. 3A.

FIG. 4 is a sectional view for explaining a manufacturing process of a functional electron-emitting device according to a second embodiment of the present invention.

FIG. 5 is a sectional view for explaining a manufacturing process of the functional electron-emitting device according to the second embodiment of the present invention.

FIG. 6 is a sectional view of a functional electron-emitting device according to a third embodiment of the present invention.

7A is a plan view showing a functional electron-emitting device according to a fourth embodiment of the present invention. FIG. 7B is a cross-sectional view taken along line AA in FIG. 7A.

FIG. 8 (a) is a plan view of a first stage of a method for manufacturing a functional electron-emitting device according to a fifth embodiment of the present invention; Sectional view for process description

FIG. 9 is a sectional view for explaining a manufacturing process of a functional electron-emitting device according to a fifth embodiment of the present invention.

FIG. 10 is a plan view of a functional electron-emitting device according to a fifth embodiment of the present invention.

FIG. 11 is a sectional view showing a conventional functional electron-emitting device.

12A is a plan view showing a conventional functional electron-emitting device. FIG. 12B is a cross-sectional view taken along line AA in FIG.

FIG. 13 is a sectional view for explaining a manufacturing process of a conventional functional electron-emitting device.

[Explanation of symbols]

 1 substrate 2 emitter 4 gate 5 collector

 ────────────────────────────────────────────────── ─── Continuation of the front page (56) References JP-A-1-300558 (JP, A) JP-A-63-274048 (JP, A) JP-A-2-276129 (JP, A)

Claims (6)

(57) [Claims] 1. A substrate, an emitter portion formed on the substrate and having a wedge-shaped portion whose width at least partially changes in at least a plane, and formed on the substrate at a predetermined distance from the emitter portion. an insulating layer, which is formed at a predetermined distance from said emitter portion on the insulating layer, d
Edge part almost parallel to the edge part of the wedge-shaped part of the mitter part
A functional electron-emitting device comprising: a gate portion having a gate portion; and a collector portion formed on the insulating layer at a predetermined distance from the gate portion on a side opposite to the emitter portion. 2. A substrate, a conductive layer formed in a predetermined shape on the substrate, and a plane electrically connected to the conductive layer.
Emi with wedge-shaped part where the width of part gradually changes at
A jitter unit, the emitter insulation is formed at a predetermined distance from the layer, the formed at a predetermined distance from said emitter portion on the insulating layer, of the wedge-shaped portion of the emitter portion
A functional part comprising: a gate part having an edge part substantially parallel to the edge part ; and a collector part formed on the insulating layer at a predetermined distance from the gate part on a side opposite to the emitter part. Emission element. 3. A substrate is formed of a conductive material, an insulating layer is provided on the substrate by exposing a predetermined portion of the substrate, and an emitter portion is electrically connected to the conductive substrate by the exposed portion. The width of the part gradually
An emitter portion having a wedge-shaped portion that changes,
An insulating layer formed at a predetermined interval from the insulating layer;
Formed at a predetermined distance from the emitter section.
Also, an edge almost parallel to the edge of the wedge-shaped part of the emitter
A gate portion having a ridge portion; and the gate portion on the insulating layer.
At a predetermined interval on the side opposite to the emitter section.
A functional electron-emitting device comprising: a formed collector portion . 4. A semiconductor device comprising: a substrate; and a wedge-shaped portion formed on the substrate , the width of a portion of which is gradually changed at least in a plane.
And an emitter section on the substrate from the emitter section.
An insulating layer formed in a predetermined shape at a fixed interval, and
Of the emitter portion formed in a predetermined portion on the insulating layer.
Game with edge substantially parallel to edge of wedge
The emitter section on the substrate and the emitter section on the substrate.
Formed on the substrate at a predetermined interval on the side opposite to the
Functionality of electron-emitting device and a collector portion. 5. changing the voltage between the gate portion and the emitter portion by an input signal, the functional electron emission device of claims 1 to 4, wherein obtaining the output signal from the collector unit. 6. A first conductive layer is formed on a substrate, and has a wedge-shaped portion on the first conductive layer , the width of a part of which is gradually changed at least in a plane, and a predetermined distance from the wedge-shaped portion is provided. Forming a coating material having a predetermined shape, etching the first conductive layer using the coating material as a mask so as to be smaller by a predetermined distance than the coating material, and forming a predetermined portion on the substrate and the coating material. Forming a functional electron-emitting device in which an insulating layer and a second conductive layer are sequentially formed, and the covering material is removed to remove the insulating layer and the second conductive layer on the covering material.