JP2696265B2 - Semiconductor device manufacturing equipment - Google Patents

Description

Detailed Description of the Invention [Table of Contents] ・ Overview ・ Industrial application fields ・ Prior art (FIGS. 6 and 7) ・ Problems to be solved by the invention ・ Means for solving the problems ・ Functions ・Embodiment (FIGS. 1 to 5) First Embodiment Second to Fifth Embodiment Sixth Embodiment Seventh Embodiment Other Embodiments [Effects of the Invention] [Overview] Semiconductor device manufacturing apparatus And, more specifically, a semiconductor device manufacturing apparatus and a semiconductor device manufacturing method for continuously performing a series of wafer processing using a furnace, while maintaining a throughput in a batch processing method. It is an object of the present invention to provide a semiconductor device manufacturing apparatus and a semiconductor device manufacturing method capable of continuously performing a series of wafer processing without exposing a wafer to the outside air while improving processing accuracy. The device is the first A pretreatment chamber provided with a pressure adjusting means, connected to each other independently of the pretreatment chamber,
A plurality of wafer processing furnaces, each of which has a second pressure adjusting means, and inserts a wafer holder on which wafers of one cassette unit are placed into a furnace tube and processes them collectively; First opening / closing means for opening / closing between the respective wafer processing furnaces, and a selection unit provided in front of the processing chamber, for selectively transporting the wafer holder to any one of the plurality of wafer processing furnaces. Transfer means, receiving the wafer holder transferred by the selective transfer means from the selective transfer means,
A first transfer means provided in the wafer processing furnace for transferring the wafer holder directly below the furnace tube;
A second transfer provided in the wafer processing furnace, wherein the wafer holder transferred directly below the furnace tube by the transfer means is vertically moved and inserted into the furnace tube or withdrawn from the furnace tube. Means, connected to the pre-processing chamber,
A transfer path for a wafer holder provided with third pressure adjusting means,
And a second opening / closing means for opening and closing the space between the pre-processing chamber and the transfer path of the wafer holder.

[Industrial applications]

The present invention relates to a semiconductor device manufacturing apparatus and a semiconductor device manufacturing method, and more particularly, to a semiconductor device manufacturing apparatus and a semiconductor device manufacturing method for continuously performing a series of wafer processes using a furnace.

[Conventional technology]

Conventionally, semiconductor device manufacturing apparatuses are classified into a batch processing method and a single-wafer processing method.

 Batch processing type manufacturing equipment includes thermal oxidation equipment LPCVD (low pressure chemical vapor deposition) equipment PECVD (plasma excited chemical vapor deposition) equipment annealing equipment, all of which have a wafer processing furnace.

FIGS. 6 (a) and 6 (b) are configuration diagrams of a wafer processing furnace having a tubular furnace tube of a conventional example of a batch processing type manufacturing apparatus, and FIG. 6 (a) shows a wafer having a four-stage horizontal furnace. Processing furnace,
FIG. 1B shows a wafer processing furnace having four rows of vertical furnaces.

In FIG. 3A, the left figure is a top view of the wafer processing furnace,
The right figure is a side view as viewed from the A side in the left figure. In the figure, reference numerals 2a to 2d denote furnace core tubes stacked in four stages, and 1a denotes a load / unload station of the uppermost furnace. A plurality of wafers to be processed placed on the wafer holder are introduced into the furnace core tubes 2a to 2d. Further, 3a to 3d are gas inlets for introducing an inert gas or a reaction gas provided at the end of each furnace core tube 2a to 2d, and 4a heats a wafer in the uppermost furnace core tube 2a. Is a control console for controlling the temperature of the uppermost furnace.

In FIG. 6B, the left diagram is a top view of the wafer processing furnace, and the right diagram is a side view as viewed from the B side in the left diagram.
7d is a furnace core tube arranged in four rows, 6d is a lower loading / unloading part of the furnace core tube 7d, and a plurality of wafers to be processed mounted on a wafer holder (not shown) from here. Is introduced into the furnace core tube 7d. Further, 8a to 8d are gas inlets provided at the ends of the furnace core tubes 7a to 7d for introducing an inert gas or a reaction gas, 9d is a heater for heating a wafer in the furnace core tube 7d,
10d is a control console for adjusting the temperature inside the furnace core tube 7d.

In the case of the above two examples, four different types of wafer processing such as dry cleaning, formation of a gate oxide film, formation of a field oxide film, and annealing can be performed for each of the furnace core tubes 2a to 2d and 7a to 7d.

Such a batch processing type manufacturing apparatus has the following advantages. In other words, the number of wafer charges is usually about 100,
High throughput. In order to further improve the throughput, the number of charged sheets tends to be increased.

Further, since a group of wafers can be processed simultaneously under the same conditions, the process is stable.

Next, as a single wafer processing type manufacturing apparatus, there is a dry etching apparatus, a sputtering apparatus, and a CVD apparatus. FIG. 7 is a configuration diagram of a conventional sputtering apparatus of a single wafer processing type manufacturing apparatus.

In the figure, reference numeral 11 denotes a wafer transfer path through which wafers are transferred one by one under reduced pressure, and 12a to 12d denote valves 13a to 13d.
This is a load / unload chamber which is connected to the wafer transfer path 11 via a pressure control means and has independent pressure adjusting means. Hereinafter, a wafer processing furnace or the like connected to one load / unload chamber 12a will be described as a representative. Reference numeral 14 denotes a load lock chamber connected to the load / unload chamber 12a, and reference numerals 15a to 15e denote wafer processing chambers connected to the load lock chamber 14. The load lock chamber 14 contains wafers one by one. 15e
(Selective transfer means) is provided for selectively distributing the information to the robot. Then, the sputter processing of the wafers 16a to 16e is performed in the wafer processing chambers 15a to 15e.

In such a single wafer processing type manufacturing apparatus, since the wafer transfer path 11 and the wafer processing chambers 15a to 15e can be connected, continuous processing can be performed without exposing the wafers 16a to 16e to outside air.

Since conditions can be set for each of the wafers 16a to 16e, processing accuracy is high.

It has the advantage of.

[Problems to be solved by the invention]

By the way, in recent years, the throughput and the processing accuracy can be improved at the same time, and the advantages of the batch processing method and the single-wafer processing method can be performed continuously without exposing the wafer to the outside air for improving the performance of the semiconductor device. There is a demand for a manufacturing apparatus having a wafer processing furnace having a combination of the above.

However, the following problems occur when the manufacturing apparatuses of the batch processing method are simply connected by the pre-processing chamber or the wafer transfer path. In other words, the disadvantage of the batch processing method that it is difficult to maintain a wide isotropy required for processing a large number of wafers in the furnace core tube cannot be improved, and the processing accuracy is low.

In addition, if an attempt is made to secure a wide leveling zone to improve processing accuracy, the heater and the control unit become large, so that it is difficult to connect a series of manufacturing apparatuses by a pre-processing chamber or a wafer transfer path.

Further, since the number of wafers to be processed is large, it is difficult to transfer the wafer holder on which the wafers are mounted to each wafer processing chamber.

The present invention has been made in view of such conventional problems, and while maintaining the throughput in a batch processing method,
It is an object of the present invention to provide a semiconductor device manufacturing apparatus and a semiconductor device manufacturing method capable of improving processing accuracy and performing a series of wafer processing continuously without exposing the wafer to outside air.

[Means for solving the problem]

The object is to provide a pre-processing chamber provided with a first pressure adjusting means, and a second pressure adjusting means which is independently connected to the pre-processing chamber and individually provided with a second pressure adjusting means. A plurality of wafer processing furnaces for performing batch processing by inserting the wafer holder into a furnace tube, first opening / closing means for opening and closing between the pre-processing chamber and each of the wafer processing furnaces, Selectively transporting to any one of the plurality of wafer processing furnaces, a selective transport unit provided in front of the processing chamber, and a wafer holder transported by the selective transport unit from the selective transport unit. A first transfer means provided in the wafer processing furnace for receiving and transferring the wafer holder immediately below the furnace tube, and a wafer holding member transferred directly below the furnace tube by the first transfer means. Move the tool up and down A second transfer means provided in the wafer processing furnace, which is inserted into or pulled out of the furnace tube, and a wafer holder which is connected to the pre-processing chamber and has third pressure adjusting means. The problem is solved by a semiconductor device manufacturing apparatus comprising: a transfer path; and a second opening / closing unit that opens and closes a space between the pre-processing chamber and the transfer path of the wafer holder.

[Action]

In the apparatus for manufacturing a semiconductor device of the present invention, a wafer processing furnace capable of simultaneously processing wafers mounted on a wafer holder and a selective transfer means for transferring the wafer holder mounted with the wafers to the wafer processing furnace are provided. And a pre-processing chamber having the same.

Further, the wafer processing furnace receives the wafer holder transferred by the selection transfer unit from the selection transfer unit, and transfers the wafer holder directly below the furnace tube, and the first transfer unit transfers the wafer holder to the furnace tube by the first transfer unit. A second transfer means is provided for vertically moving the wafer holder transferred directly below the wafer holder and inserting it into the furnace tube, or withdrawing the wafer holder from the furnace tube.

Therefore, the wafer is transferred from the transfer path to a predetermined wafer processing furnace via the pre-processing chamber without being taken in and out of the wafer holding tool, and is directly inserted into a furnace tube in the wafer processing furnace. And can be processed.
Conversely, after the processing, the wafer holder can be pulled out of the wafer processing furnace and transferred as it is to the transfer path via the pre-processing chamber.

By the way, as in a batch processing apparatus having a wafer holder only in the processing section, when wafers are mounted one by one on the wafer holder by the wafer transfer means, or when the wafers are detached, the wafer and the wafer transfer means are provided. By contact of
Alternatively, there is a danger that the wafer is likely to be damaged or contaminated due to contact between the wafer and the wafer holder. However, according to the semiconductor device manufacturing apparatus of the present invention, such damage or contamination of the wafer can be prevented. .

Since the semiconductor device manufacturing apparatus can carry and process wafers together with the wafer holders without taking the wafers in and out of the wafer holders, in particular, one cassette unit in which 10 to 40 wafers are united. It is suitable for batch processing of medium-sized or small-sized wafers such as when processing is performed.

In the case of a medium-scale or small-scale process,
Since the uniformity in the furnace tube of the wafer processing furnace can be sufficiently secured, the processing accuracy can be maintained.

Further, since the pre-processing chamber has the means for selectively transferring the wafer holder and the first pressure adjusting means, a series of wafer processing can be continuously performed without exposing the wafer to the outside air. .

Further, it is possible to connect a plurality of wafer processing furnaces to the pre-processing chamber, thereby improving the reduced throughput due to the downsizing of the wafer processing furnace and maintaining the throughput in the batch processing system.

Further, the transfer path of the wafer holder having the third pressure adjusting means is connected to the pre-processing chamber. Therefore, one wafer processing system including a plurality of wafer processing furnaces and a pre-processing chamber in which these are independently connected to each other is connected to the transfer path, and a series of closely related wafer processing is performed. Can be done in several places.

When such a wafer processing system is independently connected to a plurality of series transfer paths and connected to each other, for example,
Wafer processing is performed by a different wafer processing system for each manufacturing lot, and various types of wafer processing are divided into a processing group that performs processing under reduced pressure and a processing group that performs processing under normal pressure. It becomes possible.

〔Example〕

Hereinafter, embodiments of the present invention will be described with reference to the drawings.

(1) Apparatus for manufacturing a semiconductor device according to an embodiment of the present invention First Embodiment FIGS. 1 (a) to 1 (c) are configuration diagrams for explaining an apparatus for manufacturing a semiconductor device according to an embodiment of the present invention. (A) is a perspective view, (b) is a top view of (a), and (c) is a cross-sectional view taken along line CC of (b) of FIG. FIG. 2 shows a wafer holder used in an apparatus for manufacturing a semiconductor device according to an embodiment of the present invention.

In FIGS. 1 (a) to 1 (c), reference numeral 17 denotes a transfer path of the wafer holder which is normally in a reduced pressure state by the exhaust device of the exhaust unit 28. As shown in FIG. The wafer holder 29 on which a plurality of wafers are placed is transported.
The load / unload chambers 18a and 18b are connected to the transport path 17 independently of each other, and each of the load / unload chambers 18a and 18b has an exhaust port (not shown).
Connected to 8 exhaust devices. The exhaust port, the exhaust device, and a leak valve (not shown) for sending gas into the chamber constitute a part of the first pressure adjusting means. A valve (second opening / closing means) 19a, which can be opened and closed, is provided between the transport path 17 and each of the load / unload chambers 18a, 18b.
19b is provided. Therefore, the pressure in each of the load / unload chambers 18a, 18b can be independently adjusted by closing each valve (second opening / closing means) 19a, 19b and exhausting the gas through the exhaust port. Thus, the pressure in the load / unload chambers 18a and 18b and the pressure in the transfer path 17 are made equal to allow the loading / unloading of the wafer holder 29 between the transfer path 17 and the load / unload chambers 18a and 18b. Easy to do.

Reference numeral 20a denotes a load lock chamber connected to the load / unload chamber 18a, and the load / unload chamber 18a and the load lock chamber 20a constitute one pre-processing chamber. The load lock chamber 20a is provided with an exhaust port 35a, and is connected to the exhaust device 41a of the exhaust unit 28.
The exhaust port 35a, the exhaust device 41a, and a leak valve (not shown) for feeding gas into the chamber constitute another part of the first pressure adjusting means. Further, an openable / closable valve 21a is provided between the load / unload chamber 18a and the load lock chamber 20a. Therefore, the pressure in the load lock chamber 20a can be independently adjusted by closing the valve 21a and exhausting the gas through the exhaust port 35a. This allows the load lock chamber 20a
The internal pressure and the pressure of the load / unload chamber 18a are made uniform so that the wafer holder 29 can be easily carried in and out between the load lock chamber 20a and the load / unload chamber 18a.

A robot (selective transfer means) 38 shown in FIG. 4A for selectively loading the wafer holder 29 into the required wafer processing furnace 22a or 22b in the load lock chamber 20a.
a is provided. The robot 38a receives the wafer holder 29 carried by the robot 37a in the load / unload chamber 18a, and can move to the wafer processing furnace 22a or 22b according to a preset wafer processing program. I have. This state is shown in FIG.
Robot 38b.

Further, reference numerals 22a and 22b denote wafer processing furnaces connected to the load lock chamber 20a independently of each other. A furnace core tube 24 for introducing and heating a wafer into each of the wafer processing furnaces 22a and 22b.
a, 24b and heaters 25a, 25b for heating the inside of the furnace core tubes 24a, 24b
And a load / unload (L / UL) section 26a as a space for loading the wafer holder 29 from the load lock chamber 20a and moving the wafer holder 29 into the furnace core tubes 24a and 24b. 26b.

An exhaust port 36a is provided in each of the wafer processing furnaces 22a and 22b, and is connected to an exhaust device 42a of the exhaust unit 28. The exhaust port of the wafer processing furnace 22b is not shown in the drawing. The exhaust port 36a, the exhaust device 42a, and a leak valve (not shown) for feeding gas into the wafer processing furnace 22a constitute a second pressure adjusting unit. An openable / closable valve (first valve) is provided between the load lock chamber 20a and each of the wafer processing furnaces 22a and 22b.
Opening / closing means) 23a and 23b are provided. Therefore, the pressure in each of the wafer processing furnaces 22a and 22b can be adjusted independently by closing the valves 23a and 23b and evacuating from the exhaust port 36a. As a result, each wafer processing furnace
Various wafer processing can be performed in the wafer processing furnaces 22a and 22b, and the pressure in each of the wafer processing furnaces 22a and 22b and the pressure in the load lock chamber 20a are made uniform to allow the wafer processing furnaces 22a and 22b and the load lock chamber 20a to communicate with each other. It is possible to easily carry the wafer holder 29 in and out. Further, FIG. 4 (a) shows the L / UL units 26a and 26b.
Transfer rings 32a and 32b for moving the wafer holder 29 to the lower part of the furnace core tube 24a or 24b while the wafer holder 29 is mounted on the ring-shaped mounting portion,
As shown in FIGS. 5 (a) and 5 (b), there are provided introducers 33a and 33b which can be moved up and down, and the wafer holder 29 carried by the transfer rings 32a and 32b is placed on the introducers 33a and 33b. And can be introduced into the furnace core tubes 24a, 24b.

Such a wafer processing furnace 22a or 22b is smaller in size than a normal batch processing type furnace, and is equivalent to one cassette which is a normal processing unit for automatically performing batch processing of wafers, for example, a medium scale of about 25 wafers. Each side has a cubic size of at most 500 mm so that the wafer holder 29 on which the amount of wafers is placed can be charged into the furnace core tubes 24a and 24b.

Further, 27a and 27b are control consoles for controlling the heating temperature of the wafer processing furnaces 26a and 26b, and 28 is an exhaust device and a power source for moving the robots 37a, 37b, 38a and 38b and the transfer rings 32a and 32b. Mechanism / exhaust unit.

According to the semiconductor device manufacturing apparatus of the embodiment of the present invention as described above, since each of the wafer processing furnaces 22a and 22b has the second pressure adjusting means 42a and the valves 23a and 23b, The pressure in the wafer processing furnaces 22a and 22b can be independently adjusted according to the type. For this reason, different wafer processing can be performed for each of the wafer processing furnaces 22a and 22b. Therefore, the type of the wafer processing is determined in advance for each of the wafer processing furnaces 22a and 22b, and the wafer processing is continuously performed by appropriately selecting these. Alternatively, a series of wafer processing can be performed by combining wafer processing contents.

Further, these wafer processing furnaces 22a and 22b are connected to the transfer path 17 via the load lock chamber 20a and the load / unload chamber 18a, and the number of wafers to be transferred is of a medium size and the transfer is easy. Selected wafer processing furnace 22 without exposing the wafer to the outside air.
The wafer can be transferred to a or 22b and a series of wafer processing can be performed.

Furthermore, since the number of wafers being processed simultaneously is of a medium scale, the processing accuracy is improved, for example, it is easy to sufficiently secure a uniform area without increasing the size of the apparatus as in the conventional batch processing method. .

In addition, although the throughput is reduced by reducing the size of the wafer processing furnaces 22a and 22b, by further adding and connecting a wafer processing furnace for performing the same wafer processing,
It is possible to maintain the same throughput as that of a conventional batch processing type manufacturing apparatus.

As a result, while maintaining the advantages of the batch processing method,
Processing accuracy can be improved, and a series of wafer processing can be performed continuously without exposing the wafer to outside air.

In the above embodiment, only the connection relationship of one pre-processing chamber is described, but the other pre-processing chamber has the same wafer processing as the wafer processing furnaces 22a and 22b connected to the one pre-processing chamber. The furnace is connected via a valve. In some cases, more wafer processing systems may be added.

As a result, a plurality of wafer processing systems are linked by the transfer path 17. Therefore, for example, wafer processing is performed by a different wafer processing system for each manufacturing lot, and various types of wafer processing are divided into a processing group that performs processing under reduced pressure and a processing group that performs processing under normal pressure. It can be performed by a processing system.

Further, in the above embodiment, two loads /
Although the unload chambers 18a and 18b are connected, any number of load / unload chambers can be connected.

Further, the number of charged wafers in the wafer holder 29 is about 25, but if the number of wafers is about 10 to 40, a decrease in throughput and a decrease in processing accuracy can be prevented, and continuous processing using a transfer path is possible. is there.

Further, the manufacturing apparatus including the semiconductor device of the above-described embodiment has the transfer path 17 for the wafer holder 29, but does not provide the transfer path 17, so that the processing chamber, the wafer processing furnaces 22a and 22b, and the And the control consoles 27a and 27b as a set of the valves 19a, 21a, 23a and 23b, and the control consoles 27a and 27b attached to the semiconductor device manufacturing apparatus of the present invention.

Second to Fifth Embodiments FIGS. 3A to 3D show second to fifth embodiments of the present invention, respectively.
FIG. 2 is a configuration diagram of the semiconductor device manufacturing apparatus according to the embodiment as viewed from above. 3 (a) to 3 (c) are different from FIG. 1 (b) in that wafer processing furnaces 22a to 22e are installed so as to surround a load lock chamber (pre-processing chamber) 20a. The number of the wafer processing furnaces 22a to 22e connected to the chamber 20a is 3, 4, and 5, respectively. Note that, in FIGS. 3 (a) to 3 (c), the first
The components denoted by the same reference numerals as those in FIG. 1B indicate the same components as those in FIG. A robot (selective transfer means) 38a is provided in the load lock chamber 20a of the semiconductor device manufacturing apparatus, for example, as shown in FIG. 4 (b) of an enlarged view of FIG. 3 (b). . The robot 38a receives the wafer holder 29 transferred by the robot 37a in the load / unload chamber 18a, and according to a preset wafer processing program, the wafer processing furnaces 22a and 22a.
It can be moved before b, 22c or 22d. As an example, a state in which the robot has moved to the wafer processing furnace 22a is shown by a robot 38b in FIG. 4 (b).

Further, FIG. 3 (d) is similar in arrangement to FIG. 1 (b), in which wafer processing furnaces 22a to 22e are horizontally installed independently of each other along a load lock chamber (pre-processing chamber) 20a. ing. However, it is different from FIG. 1B in which the number is two in that the number of the wafer processing furnaces 22a to 22d is four. Further, between the load lock chamber 20a and the transport path 17, a carry-in valve 40a and a carry-out valve 40b are separately provided, and a first carry-in / out valve 19a is provided. This is different from FIG. In FIG. 3 (d), the components denoted by the same reference numerals as those in FIG. 1 (b) indicate the same components as those in FIG. 1 (b). In the load lock chamber 20a of the semiconductor device manufacturing apparatus, a robot (selective transfer means) 38a similar to that shown in FIG. 4A is provided, and performs the same function as that shown in FIG. 4A.

Throughput can be maintained by appropriately using the above-described semiconductor device manufacturing apparatus according to the number of series of wafer processing steps or the required number of processed wafers.
Further, more efficient work can be performed.

In each of these examples, one load / unload chamber 18a or one load lock chamber 20a
Is connected to the transport path 17, but any number of load / unload chambers or load lock chambers can be connected.

Further, as in the first embodiment, the semiconductor device manufacturing apparatuses of the second to fifth embodiments have the transfer path 17 for the wafer holder 29, but without the transfer path 17, The apparatus for manufacturing a semiconductor device according to the present invention may be constituted by a set of a pre-processing chamber, a wafer processing furnace, valves associated therewith, first and second pressure adjusting means, and a control console.

Sixth Embodiment Next, a flattened BPSG film is formed using the manufacturing apparatus shown in FIGS. 1A to 1C and the wafer holder shown in FIG. 2 according to a sixth embodiment of the present invention. A method for manufacturing a semiconductor device will be described with reference to FIGS. 1 (a) to (c), FIGS. 2, 4 (a) and 5 (a), (b).

First, as shown in FIG. 1 (b), a load / unload chamber 18a communicating with the transport path 17 via a valve 19a
Is reduced by an exhaust device, and 25 wafers for one cassette placed in a wafer holder 29 as shown in FIG. It is transported to the load chamber 18a.

Next, after opening the valve 19a leading to the load / unload chamber 18a and carrying the wafer holder 29 into the load / unload chamber 18a, the valve 19a is closed and the pressure in the load / unload chamber 18a is reduced. The pressure in the load / unload chamber 18a is reduced by an exhaust device so that the pressure becomes approximately the same as the pressure in the lock chamber 20a.

Next, the valve 21a is opened, the wafer holder 29 is loaded into the load lock chamber 20a by the method using the robots 37a and 38a, and then the valve 21a is closed.

Next, in order to form a BPSG film by LPCVD (low pressure chemical vapor deposition), the pressure inside the wafer processing path 22a is reduced and the pressure inside the load lock chamber 20a is reduced according to this pressure.

Next, after opening the valve 23a communicating with the one wafer processing path 22a, the robot 38a installed in the load lock chamber 20a causes the wafer holder 29 to reach the one wafer processing furnace 22a in accordance with a previously programmed instruction.
Is moved (corresponding to the position of the robot 38b in FIG. 4A). Next, the wafer holder 29 is placed on the transfer ring 327a installed in the L / UL section 26a, and the wafer holder 29 is rotated by the transfer ring 32a to move the introduction tool 33a below the furnace core tube 24a. Carry to the top.

Next, after closing the valve 23a, the introduction tool 33a is moved upward (FIG. 5 (a)), whereby the wafer holder 29 is placed on the introduction tool 33a, and is heated to a predetermined temperature as it is. (FIG. 5 (b)).

Next, a reaction gas is introduced from the reaction gas introduction port 39a.
As a result, a BPSG film is formed on the wafer. After the BPSG film is formed, the wafer holder 29 is removed from the furnace
Remove from

Subsequently, the wafer holder 29 is moved to the load lock chamber 20a.
To be carried out. Next, in order to perform an annealing process, after adjusting the pressure in the load lock chamber 20a according to the pressure of another wafer processing furnace 22b connected to the load lock chamber 20a and the valve 23b via the valve 23b, the valve 23b is opened and the wafer is opened. Is carried into another wafer processing furnace 22b, and is placed on the introducing tool 33b shown in FIG. 5 (a). Next, as shown in FIG. 5 (b), the introducer 33b is moved upward to introduce the wafer holder 29 into the furnace core tube 24b heated to a predetermined temperature. Next, heat treatment is performed in the furnace core tube 24b to reflow the BPSG film. As a result, a flat BPSG film is formed on the wafer.

Thereafter, the wafer processing furnace 22b and the load lock chamber 20a
-Load / unload chamber 18a-The wafer is taken out by sequentially passing through the transfer path 17.

As described above, according to the manufacturing method of the sixth embodiment of the present invention using the manufacturing apparatus shown in FIGS. 1A to 1C, a series of wafer processing can be performed without exposing the wafer to outside air. It can be performed continuously. In addition, since the number of processed sheets is about 25, which is a medium scale, the uniformity in the furnace core tubes 24a and 24b can be sufficiently obtained, and therefore, the processing accuracy can be improved as compared with the case of batch processing.

In the above embodiment, the wafer processing is performed by the manufacturing apparatus having the transfer path 17, but the wafer is directly held from the load lock chamber 20a or the load / unload chamber 18a using the manufacturing apparatus without the transfer path 17. Bring in the tool 29,
A series of wafer processing can also be performed.

(2) Seventh Embodiment Next, a semiconductor device according to a seventh embodiment of the present invention, in which a film required for forming a gate portion of an MIS transistor is formed by using the manufacturing apparatus shown in FIG. The method will be described with reference to FIGS. 2, 3 (b), 4 (b) and 5 (a), (b).

First, as shown in FIG. 3 (b), the transport path 17 and the valve
The load / unload chamber 18a communicated with the load / unload chamber 19a is depressurized by an exhaust device of an exhaust unit (not shown), and a wafer holder 29 as shown in FIG. 25 for 1 cassette placed in
One wafer is simultaneously transferred to the load / unload chamber 18a.

Next, the valve 19a is opened and the wafer holder 29 is loaded /
After being carried into the unload chamber 18a, the valve 19a is closed, and the pressure in the load / unload chamber 18a is set to be approximately equal to the pressure in the load lock chamber 20a. To adjust.

Next, after almost reaching the pressure of the load lock chamber 20a, the valve 21a is opened, and the wafer holder 29 is carried into the load lock chamber 20a by a method using ordinary robots 37a and 38a. Subsequently, the valve 21a is closed.

Next, in order to dry-clean the wafer, the inside of the first wafer processing path 22a is reduced to a predetermined pressure by the exhaust device 42a, and the inside of the load lock chamber 20a is reduced to the predetermined pressure by the exhaust device (not shown). .

Next, after opening the valve 23a leading to the first wafer processing furnace 22a, as shown in FIG. 4 (b), the robot 38a disposed in the load lock chamber 20a is operated according to a pre-programmed instruction. First wafer processing furnace 22
The robot moves to a (corresponding to the position of the robot 38b in FIG. 4A). Next, the wafer holder 29 is moved to the wafer processing furnace 22a.
The wafer holder 29 is placed on the transfer ring 32a installed in the L / UL section 26a below the wafer holder and rotated, and the wafer holder 29 is
It is carried to above the vertically movable introducer 33a provided below 4a.

Next, after closing the valve 23a, the introduction tool 33a is moved upward (FIG. 5 (a)), whereby the wafer holder 29 is placed on the introduction tool 33a, and the temperature is kept at 200 to 300 ° C. as it is. The mixture is introduced into the heated upper furnace core tube 24a (FIG. 4 (b)).

Subsequently, introducing HF-H ₂ O gas mixture from the reaction gas inlet 39a. As a result, the wafer surface is cleaned. After the wafer cleaning, the wafer holder 29 is removed from the furnace
Take out from a.

Subsequently, the wafer holder 29 is moved to the load lock chamber 20a.
To be carried out. Next, in order to form a gate oxide film on the wafer surface, an inert gas is introduced by a leak valve (not shown) to bring the pressure of the second wafer processing furnace 22b to normal pressure, and to adjust the pressure to the normal pressure, not shown. The pressure in the load lock chamber 20a is adjusted by introducing an inert gas from the leak valve. Thereafter, the valve 23b is opened, and the wafer holder 29 is carried into the L / UL section 26b below the second wafer processing furnace 22b, and is placed on the introduction tool 33b shown in FIG. 5 (a). next,
As shown in FIG. 5 (b), the insertion tool 33b is moved upward to introduce the wafer holder 29 into the furnace core tube 24b heated to 1200 ° C. Next, oxygen gas is introduced from the reaction gas inlet 39b, and is maintained for a predetermined time. As a result, a first gate oxide film having a predetermined thickness is formed on the wafer.

Next, the wafer holder 29 is removed from the furnace core tube 24b.
Thus, the gate oxide film can be formed on the surface of the wafer where the natural oxide film is not formed, which contributes to the improvement of the performance of the semiconductor device.

Subsequently, the wafer on which the first oxide film is formed is carried out of the wafer processing furnace 22b into the load lock chamber 20a.

Next, in order to form a polysilicon film by LPCVD (Low Pressure Chemical Vapor Deposition), the pressure in the third wafer processing furnace 22c is reduced and the pressure in the load lock chamber 20a is adjusted in accordance with this pressure. The valve 23c is opened, the wafer holder 29 is carried into the third wafer processing furnace 22c, a necessary reaction gas is introduced, and a heating process is performed in the furnace tube 24c, and a polysilicon film is formed on the first oxide film. Is completed, the formation of the two-layer film necessary for forming the gate portion is completed.

Thereafter, the third wafer processing furnace 22c, the load lock chamber 20a, the load / unload chamber 18a, and the transfer path 17
Through each wafer holder 29, and take out each wafer holder 29 outside the manufacturing apparatus.
The transistor is completed.

In addition, the first wafer connected to another load / unload chamber 18a by the above-described procedure for 25 wafers placed on another wafer holder in parallel with the above operation. Perform a cleaning process in a wafer processing furnace,
After the first gate oxide film is formed in the wafer processing furnace, a nitride film is formed on the oxide film in the fourth wafer processing furnace, and then the second gate oxide film is formed on the nitride film in the second wafer processing furnace. An oxide film may be formed to form a three-layer film of an oxide film / nitride film / oxide film on a wafer. Alternatively, the number of wafer processing furnaces connected to the load lock chamber 20a may be increased, and the formation of the gate portion and the formation of the three-layer film may be performed in parallel.

Further, since the number of wafers to be processed is reduced as compared with the conventional case, the throughput is reduced, but the same series of wafer processing is performed in parallel by another processing system connected to the transfer path 17. , The throughput can be maintained.

As described above, according to the manufacturing method of the seventh embodiment of the present invention using the manufacturing apparatus of the other embodiment of the present invention, the reduced-pressure atmosphere is passed through the wafer holder 29 on which a plurality of wafers are placed. Since the wafers are transported inside and one of a plurality of wafer processing furnaces is selected for wafer processing, the processing accuracy is improved while maintaining the throughput, and a series of processing using the furnace without exposing the wafers to the outside air is performed. Can be continuously performed.

In the above embodiment, the wafer processing is performed by the manufacturing apparatus having the transfer path 17, but the wafer is directly held from the load lock chamber 20a or the load / unload chamber 18a using the manufacturing apparatus without the transfer path 17. Bring in the tool 29,
A series of wafer processing can also be performed.

Other Examples For the following types of wafer processing, By using the semiconductor device manufacturing apparatus of the first to fifth embodiments of the present invention, the following series of wafer processing can be continuously performed on a plurality of wafers. That is,
Each wafer processing is indicated by the symbol in Table 1, and CL-GX CL-GX-PL CL-GX-TN CL-GX-ND CL-GX-ND-GX CL-GX-ND-GX-PL CL-AN CL -Combinations such as PL-XD are possible.

〔The invention's effect〕

As described above, according to the semiconductor device manufacturing apparatus of the present invention, a wafer processing furnace capable of simultaneously processing a plurality of wafers, particularly a medium number of wafers such as 10 to 40 wafers, has a wafer having a pressure adjusting means. Because it is connected to the transport path of the holder, while maintaining the throughput of the batch processing method,
Processing accuracy can be improved, and a series of wafer processing can be performed continuously without exposing the wafer to outside air.

According to the method of manufacturing a semiconductor device of the present invention, the wafer is transferred in a reduced-pressure atmosphere via a wafer holder on which a plurality of wafers are placed, and one of the plurality of wafer processing furnaces is selected to perform wafer processing. Therefore, a series of wafer processing using a furnace can be continuously performed without exposing the wafer to the outside air.

[Brief description of the drawings]

1 is a configuration diagram illustrating a semiconductor device manufacturing apparatus according to an embodiment of the present invention; FIG. 2 is a perspective view illustrating a wafer holder used in the semiconductor device manufacturing apparatus according to the embodiment of the present invention; FIG. 3 is a top view illustrating a semiconductor device manufacturing apparatus according to another embodiment of the present invention, FIG. 4 is an enlarged top view of the semiconductor device manufacturing apparatus according to the embodiment of the present invention, FIG. FIG. 6 is an enlarged perspective view of a wafer processing furnace of a semiconductor device manufacturing apparatus according to an embodiment of the present invention; FIG. 6 is a diagram for explaining a conventional batch processing type semiconductor device manufacturing apparatus; It is a figure explaining a manufacturing device of a semiconductor device of a single wafer processing system. [Description of Signs] 1a: Load / unload station, 2a to 2d, 7a to 7d, 24a to 24e: Furnace core tube, 3a to 3d, 8a to 8d, 39a to 39d: Reaction gas inlet, 4a , 9a, 25a to 25e ... heater, 5a, 10a to 10d, 27a to 27e ... control console, 6a, 26a to 26e ... L / UL section, 11 ... wafer transfer path, 12a to 12d, 18a to 18b ...... Load / unload chamber, 13a-13d, 19a, 19b, 21a, 21b, 34a-34e, 40a, 40b ... valve, 14,20a ... load lock chamber, 15a-15e ... wafer processing chamber, 16a ... 16e ... wafer, 17 ... transfer path, 19a, 19b ... valve (second opening / closing means), 22a-22e ... wafer processing furnace, 23a-23e ... valve (first opening / closing means), 28 …… Mechanical part / exhaust part, 29 …… Wafer holder, 30 …… Wafer mounting part, 31 …… Protrusion, 32a-32d …… Transferring, 33a-33d …… Introduction tool, 35a, 36a …… Exhaust port, 37a, 38a-38c …… Robot (selectable Means), 41a, 42a ...... exhaust system.

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁶ Identification code Agency reference number FI Technical display location H01L 21/3065 H01L 21/324 D 21/324 21/302 B (56) References JP2 -152251 (JP, A) JP-A-1-253237 (JP, A) JP-A-63-157870 (JP, A) JP-A-61-580 (JP, A) JP-A-57-149748 (JP, A) JP-A-57-87120 (JP, A) JP-A-63-229836 (JP, A) JP-A-60-15942 (JP, A) JP-A-2-82032 (JP, U)

Claims (1)

(57) [Claims] 1. A pre-processing chamber having a first pressure adjusting means, and a second pressure chamber connected to the pre-processing chamber independently of each other and individually connected to the pre-processing chamber.
A plurality of wafer processing furnaces, each of which includes a wafer holder on which wafers of one cassette are mounted and inserted into a furnace tube to process the wafers at once; and the pre-processing chamber and each of the wafer processing furnaces. A first opening / closing means for opening / closing a space between the first and second wafer processing units; a selective transfer means provided in front of the processing chamber, for selectively transferring the wafer holder to any one of the plurality of wafer processing furnaces; A first transfer unit provided in the wafer processing furnace, for receiving the wafer holder transferred by the selective transfer unit from the selective transfer unit, and transferring the wafer holder directly below the furnace tube; A wafer holder transferred directly below the furnace core tube by the first transfer means, which is vertically moved and inserted into the furnace core tube or withdrawn from the furnace core tube; Means of transport; A transfer path for the wafer holder, which is connected to the pre-processing chamber and includes third pressure adjusting means, and a second opening / closing means for opening and closing between the pre-processing chamber and the transfer path for the wafer holder. An apparatus for manufacturing a semiconductor device, comprising: