JP2695506B2 - Multi-chip color image sensor - Google Patents

Description

Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a multi-chip color image sensor, and more particularly, a plurality of semiconductor image sensors having a plurality of light receiving windows are arranged, and a plurality of light receiving windows form a single color image sensor. The present invention relates to a multi-chip color image sensor that constitutes a light receiving element.

[Prior Art] Conventionally, in a document reading unit such as a facsimile,
Semiconductor image sensors represented by CCD image sensors and bipolar image sensors in which light receiving windows are arranged in a straight line are used. Generally, as a method of using these, a plurality of semiconductor image sensor chips each having a longitudinal direction of several millimeters to several tens of millimeters are arranged to have the same size as a read original, and a one-to-one optical system, for example, a cell-hook lens array (trade name) There is a so-called multi-chip system in which a contact type image sensor is used by using, for example, Nippon Sheet Glass Co., Ltd.

FIG. 13 is a schematic plan view of a multi-chip type semiconductor image sensor.

FIG. 14 is an enlarged view of part A of the multi-chip type semiconductor image sensor.

FIG. 15 is a block diagram showing an optical system using the multi-chip type semiconductor image sensor.

In Figure 13 and Figure 15, 1 is the original, the circuit board for a semiconductor image sensor mounting placing the desired circuit, S ₁ to S _n are semiconductor image sensors arranged in a line 4, 5 Seruhokku Lens array, 6 is LE for document illumination
Shows D. In FIG. 14, 7 is a light receiving window, and the light receiving windows of the respective semiconductor image sensors are arranged in a straight line.

This multi-chip type semiconductor image sensor is
It has a feature that it does not require a reduction optical system and can be downsized, and is often used in image processing apparatuses such as facsimiles.

By the way, in recent years, there has been an increasing demand for color sensors for these semiconductor image sensors in addition to the conventional monochrome. As the most general method for realizing colorization, the above-mentioned multi-chip type semiconductor image sensor has been studied, and for example, the following three methods have been proposed.

In the first method, the pixel (light receiving window) pitch is set to 1/3 for the monochrome image sensor, and the RED, G
REEN and BLUE color filters are arranged in order on the light receiving window, and three adjacent light receiving windows, namely RED, GREEN,
This is a system in which each BLUE has an output of one light receiving window and one dot for one color (one color light receiving element).

FIG. 16 (A) is an explanatory view showing the arrangement of the light receiving windows in the case of monochrome, and FIG. 16 (B) is an explanatory view showing the arrangement of the light receiving windows in the case of color.

In FIGS. 16A and 16B, 8a and 8b are semiconductor image sensors, 7a and 7b are light receiving windows, and in the case of monochrome, the pitch of the light receiving windows 7a (light receiving window pitch in the main scanning direction) is , The pitch of the light receiving window 7b for color (light receiving window pitch in the main scanning direction) is 1/3, and the light receiving window 7b has RED, GREEN, B
LUE color filters are arranged in sequence. In addition,
Such a method is called an inline method.

In the second method, the light receiving windows on the semiconductor image sensor are changed from one row to three rows, and the distance between each row (light receiving window pitch in the sub-scanning direction) is made equal to the light receiving window pitch in the main scanning direction or an integral multiple. When the line spacing is the same as the pitch in the main scanning direction, the outputs of the first and second rows are stored in the memory and the output of the first row is two rows and the output of the second row is one row. Send it out, and output it and the output of the third line to color 1.
This is a system of dots (one color light receiving element).

 FIG. 17 is an explanatory view showing the arrangement of the light receiving windows.

In FIG. 17, 10 is a semiconductor image sensor and 9 is a light receiving window. P is the pitch of the light receiving window 9 in the main scanning direction, Q
Is the line pitch of the light receiving window 9 (light receiving window pitch in the sub-scanning direction)
It shows. For example, a RED color filter is arranged in the light receiving window in the first row, a GREEN color filter is arranged in the light receiving window in the second row, and a BLEU color filter is arranged in the light receiving window in the third row.

The third method is a method in which three rows of semiconductor image sensors having one row of light receiving windows are arranged and a color filter is arranged for each semiconductor image sensor in each row.

FIG. 18 is an explanatory view showing the arrangement of semiconductor image sensors.

In the figure, 7 is a light receiving window, 11 is a semiconductor image sensor in the first row, 12 is a semiconductor image sensor in the second row, and 13 is a semiconductor image sensor in the third row. For example, RED in the light receiving window of the semiconductor image sensor in the first row
, A green color filter is arranged in the light receiving window of the semiconductor image sensor in the second row, and a blue color filter is arranged in the light receiving window of the semiconductor image sensor in the third row.

In each of the conventional examples described above, the sub-scanning direction is the direction in which the read document advances and the main-scanning direction is the direction along which the light receiving windows are arranged. In addition, a row is a line of light receiving parts in the sub-scanning direction,
A row is a row of light receiving windows in the main scanning direction.

FIG. 19 is an explanatory diagram for illustrating the main scanning direction and the sub scanning direction.

In the figure, 16 is a sub-scanning direction, 17 is a main scanning direction, 14
Is the position of the light receiving window at the beginning of reading of the first chip of the multi-chip image sensor, and 15 is the position of the final reading light receiving window of the last chip.

However, the above-described three-system multi-chip color image sensor has the following problems.

First, in the case of the in-line method as the first method, in this case, for example, as shown in FIG. 20, the dot pitch of the joints of the chips of the semiconductor image sensor becomes extremely larger than the regular pitch. Becomes

Here, in the case of the inline method with the dot pitch,
In the color sensor, since one color dot (one color light receiving element) is constituted by three light receiving windows of RED, GREEN, and BLUE, it is equivalent to GREEN-GREEN, RED-RED, and BLUE-BLUE. In FIG. 20, it is shown between GREEN and GREEN.

Now, P ₁ is the regular pitch, P ₂ is the pitch of the joint of the semiconductor image sensor, A is the distance between the edge of the light receiving window and the semiconductor image sensor chip edge, B is the gap of the joint of the semiconductor image sensor, and D is When the distance between the light receiving window, P _{2 is, P 2 = P 1 + 2A} + B-D ...... next, the semiconductor image sensor of the dot pitch P ₂ of the joint of each chip (hereinafter, referred to as the pitch P ₂₎ regular pitch It is larger than P ₁ (hereinafter, referred to as pitch P ₁ ) by 2A + BD.

Here, the resolution is set to 400 DPI (400 per inch).
Dot) to calculate pitch P ₁ and pitch P ₂ .

Pitch P ₁ is A is set to 20 μm considering the influence on the light receiving window when the semiconductor image sensor is cut out from the semiconductor wafer.

About B, it becomes about 20 μm due to the die bonding accuracy of the semiconductor image sensor. D is set to about 6 μm considering the isolation of each light receiving window. The pitch P ₂ at this time is P ₁ = 63.5 μm, A = 20 μm, B = 20
Substituting μm and D = 6 μm into the equation, P ₂ = 63.5 (μm) + 2 × 20 (μm) +20 (μm) −6 (μm) = 117.5 (μm).

Therefore, Generally, in the case of a color sensor, a pitch shift of about 1.85 times adversely affects the output image.

Next, the case of the second method, which is a three-line method, is easier to deal with in terms of pitch deviation than the in-line method, as shown in FIG.

In the 3-line method, since RED, GREEN, and BLUE color filters are provided for each row, the regular pitch P ₃ becomes the pitch of adjacent color filters, as shown in FIG. The dot pitch P _{4 at the} joint is the pitch of the color filters at the ends of the adjacent semiconductor image sensor chips.

If the pitch P ₃ is 63.5 μm and the size of the light receiving window in the main scanning direction is 30 μm, then P ₄ = 2A + B + 30 (μm) = 90 (μm).

At this time, the pitch P ₄ is about 1.42 times the pitch P ₃ . As for the output image, the pitch deviation that affects the image is generally 1.
Since it is more than 5 times, this value is safe. However, in the case of the 3-line method, an external memory is required, which makes the entire system complicated and increases the cost.

This is the case of the third method, but in this case,
A larger memory than the line system is required, and the mounting accuracy of each semiconductor image sensor needs to be improved, which is considered to be quite difficult to realize.

[Problems to be Solved by the Invention] As described above, each of the three methods for configuring the multi-chip color image sensor has a problem, but the first method, the inline method, does not require a memory, and thus is a system. It has attracted attention because it has advantages such as simplification of the above and cost reduction.

An object of the present invention is to solve the problem that the original data is lost at the joint of the semiconductor image sensor chip (portions A and B in FIG. 20), which has been a problem in the inline system.

[Means for Solving the Problems] In the multi-chip color image sensor of the present invention, a plurality of semiconductor image sensors having a plurality of light receiving windows are arranged, and a plurality of light receiving windows in the main scanning direction constitute one color light receiving element. In the multi-chip color image sensor described above, a part or all of the plurality of light receiving windows forming the color light receiving element at the end of the semiconductor image sensor are arranged side by side in the sub-scanning direction.

Note that, here, "arranged side by side in the sub-scanning direction" means that, as shown in FIG. 12 (A), a plurality of (only three in the figure are shown for simplification) light receiving windows 22 are arranged in the main scanning direction. The arrangement is not limited to the case of arranging at a right angle with respect to 17 (parallel to the sub-scanning direction 16), and as shown in FIG.
In the sub-scanning direction 16 is not included. Further, in FIGS. 12A and 12B, a plurality of light receiving windows 22 are provided.
Are arranged in a straight line, but in the present application, the case where they are not arranged in a straight line is also included. In the embodiments described later, a case will be described in which a plurality of light receiving windows are arranged at right angles to the main scanning direction (parallel to the sub scanning direction) for simplification.

[Operation] The conventional in-line type multi-chip color image sensor has the same pitch as described with reference to FIG.
P ₂ is the pitch P ₁ plus 2A + BD.

According to the present invention, the arrangement of the three light receiving windows forming the color light receiving elements at the ends of the semiconductor image sensor is juxtaposed in the sub-scanning direction so that the dot pitch P ₄ of the joints of the respective chips of the semiconductor image sensor are adjacent to each other. This is the pitch between the center positions in the main scanning direction of the plurality of light receiving windows juxtaposed in the sub scanning direction of the semiconductor image sensor. Here, the pitch P ₄ according to the present invention is 2A + B plus the length L of the light receiving window in the main scanning direction, and P ₄ = 2A + B + L.

Conventional dot pitch P ₂ and dot pitch of the present invention
When the difference of P ₄ is specifically calculated, P ₂ −P ₄ = (P ₁ + 2A + B−D) − (2A + B + L) = P ₁ −D−L. Since P ₁ is P ₁ = 3D + 3L (assuming that the length L of the light receiving window and the distance D between the light receiving windows in the conventional example and the present invention are equal), P ₂ −P ₄ = 2 (D + L)> 0 Becomes

As described above, in the present invention, the dot pitch of the joints of the respective chips of the semiconductor image sensor can be made smaller than that of the conventional in-line type multi-chip color image.

In the multi-chip color image sensor of the present invention, an output signal from at least one light receiving window among the light receiving windows juxtaposed in the sub-scanning direction is used as an output signal from a region corresponding to a joint between adjacent semiconductor image sensors. Can be processed.

Examples Hereinafter, examples of the present invention will be described in detail with reference to the drawings.

The example shown here uses a semiconductor image sensor with a resolution of 400 DPI, that is, a group of light-receiving windows (one dot of three light-receiving windows for each color) forming one color dot is arranged in the main scanning direction at a pitch of 63.5 μm. 316 dots of color on one semiconductor image sensor, that is, 9
48 light receiving windows are arranged. The size of each light receiving window in the main scanning direction is 15 μm, and about 6 μm is used for the isolation between the light receiving windows and the wiring. Isolation width of approx. 6 μm to achieve 63.5 μm in the three light receiving windows
Has been partially adjusted. The length of the semiconductor image sensor chip in the main scanning direction is about 20 mm, and 11 of these semiconductor image sensors are arranged on the circuit board so that the light receiving windows are aligned in the main scanning direction. It was done.

10 and 11 are schematic plan views of the overall configuration of an embodiment of the multi-chip color image sensor of the present invention.

In both figures, 23 is a circuit board on which a desired circuit is arranged,
Reference numeral 20 is a semiconductor image sensor using the present invention, 22 is a light receiving window arranged vertically in the main scanning direction, and 21 is another light receiving window.

FIG. 10 shows a case where the light receiving windows 22 are arranged on both sides of the circuit board 23, and FIG. 11 shows a case where the light receiving windows 22 are arranged on one side of the circuit board 23. In the following embodiments, the case where the light receiving windows 22 are arranged on both sides of the circuit board 23 will be described.

FIG. 1 is a partial enlarged view of the first embodiment of the multi-chip color image sensor of the present invention, and is an explanatory view of a characteristic portion of the present invention, corresponding to the enlarged view of part B in FIG.

As described above, in the case of 400 DPI, the pitch P ₁ of one color dot is 63.5 μm, and the 24 three light receiving windows are sequentially arranged at this pitch centering on GREEN.

Here, the three light receiving windows 22 at both ends of the semiconductor image sensor 20
Also, it is desirable that the pitch is 63.5 μm and it is arranged from the previous GREEN light receiving window. That is, P ₁ = P ₅ (P ₅ is the previous GR
The pitch between the center position of the light receiving window of the EEN and the center position of the three light receiving windows in the main scanning direction is shown). This is because the influence of the output image due to the pitch deviation is eliminated, and in order to realize this, the center position of the 3 light receiving window 22 in the main scanning direction is immediately twice the pitch P ₃ from the center position of the BLUE light receiving window. Only the distance of is in a distant position.

It is needless to say that it is desirable to bring the pitch P ₄ at the joint of the semiconductor image sensor close to the pitch P ₁ and the pitch P ₅ in order to eliminate the influence of the output image due to the pitch shift.

In the present embodiment, since the three light receiving windows 22 are arranged side by side in the sub-scanning direction, the pitch P ₄ of the joints of the semiconductor image sensor is set to be smaller than that of the inline multi-chip image sensor shown in FIG. Pitch P ₁ or
It becomes possible to approach P ₅ .

Here, the pitch P ₄ will be concretely calculated.

3 Now, the distance A from the edge of the light receiving window 22 to the edge of the semiconductor image sensor is 20 μm (value given by the dicing accuracy and the influence on the light receiving window), and the joint interval B of the semiconductor image sensor is 20 μm (given by the die bonding accuracy). Value) Becomes

The ratio of P ₄ and P ₁ (or P ₅ ) is P ₄ / P ₁ = 75 / 63.5 = 1.18 That is, the pitch deviation is 1.18 times, which is a value with almost no problem in image quality.

Further, from the outer edge of the first light receiving window (RED in FIG. 1) of the light receiving window 22 arranged at right angles to the main scanning direction to the third edge.
Distance W to the outer edge of the light receiving window (BLUE in Fig. 1)
Is less than 3 times the pitch P ₃ of the light receiving window 21, that is, less than 63.5 μm. The width W in the main scanning direction is 63.5 μm
By setting the following, that is, by setting the width of one color dot of 400 DPI or less, the reading position of the three light receiving windows becomes substantially equivalent to the case where the same point of the original is read.

In the embodiments described above, the color filters are described as red (RED), green (GREEN), and blue (BLUE), but other colors such as cyan, magenta, and yellow may be used.

2 (A) and 2 (B) are partially enlarged views of the second and third embodiments of the multi-chip color image sensor of the present invention.

In this embodiment (second embodiment and third embodiment), two light receiving windows arranged in parallel in the sub-scanning direction are provided at the end of the semiconductor image sensor.

In the second embodiment shown in FIG. 2 (A), the light receiving window of the color filter B is arranged on the light receiving window of the color filter G arranged in the same manner as the other light receiving windows. Is a light receiving window “arranged side by side in the sub-scanning direction” in the present application. These two light receiving windows and the color filter R next to it
One color light receiving element is configured with the light receiving window of.

Here, the distance between the center position of the light receiving window of the adjacent color filter R and the center position of the light receiving window of the color filter G is equal to the pitch P ₃ of the other light receiving windows.

In the third embodiment shown in FIG. 2B, the middle of the light receiving window of the color filter G and the light receiving window of the color filter B coincides with the centers of the other light receiving windows arranged in the main scanning direction. It is located in.

3 (A) and 3 (B) are partial enlarged views of the fourth and fifth embodiments of the multi-chip color image sensor of the present invention.

In the fourth embodiment shown in FIG. 3A, the light receiving windows of the color filters R and B are arranged on both sides of the light receiving window of the color filter G arranged in the same manner as the other light receiving windows.
These three light receiving windows are the “light receiving windows“ arranged side by side in the sub-scanning direction ”in the present application.

Here, the distance between the center position of the light receiving window of the adjacent color filter G and the center position of the light receiving windows of the color filters G juxtaposed in the sub-scanning direction is three times the pitch P ₃ of the other light receiving windows. Has doubled.

In the fifth embodiment shown in FIG. 3B, the upper side of the light receiving window of the color filter G arranged in the same manner as the other light receiving windows,
The light receiving windows of the two color filters R and B are arranged.

In addition, although the embodiment described above shows the case where the color colors are three colors of R, G, and B, the present invention can be applied even if there are two colors or four or more colors. Hereinafter, an example will be described.

4 (A) and 4 (B) are partially enlarged views of the sixth and seventh embodiments of the multi-chip color image sensor of the present invention.

5 (A) and 5 (B) are partially enlarged views of the eighth and ninth embodiments of the multi-chip color image sensor of the present invention.

In each of the embodiments shown in FIGS. 4 (A) and (B) and FIGS. 5 (A) and (B), there are two light receiving windows juxtaposed in the sub-scanning direction at the end of the semiconductor image sensor. One color light receiving element is constituted by the light receiving windows of the two color filters R and G.

In each drawing, reference numeral 25 is a light receiving window which constitutes one color light receiving element.

In the sixth embodiment shown in FIG. 4 (A), the light receiving window of the color filter R is arranged on the light receiving window of the color filter G arranged in the same manner as the other light receiving windows. Is a light receiving window “arranged side by side in the sub-scanning direction” in the present application.

Here, the distance between the center position of the light receiving window of the adjacent color filter G and the center position of the light receiving window of the color filter G, which is a light receiving window juxtaposed in the sub-scanning direction, is
It is equal to the pitch P ₃ of other light receiving windows.

In the seventh embodiment shown in FIG. 4B, the middle of the light receiving window of the color filter G and the light receiving window of the color filter R is
It is arranged so as to coincide with the centers of the other light receiving windows arranged in the main scanning direction.

Compared to the sixth embodiment shown in FIG. 4 (A), the eighth embodiment shown in FIG. 5 (A) is juxtaposed in the sub-scanning direction with the center position of the light receiving window of the color filter G immediately adjacent thereto. The distance from the center position of the light receiving window of the color filter G, which is the light receiving window,
It is twice the pitch P ₃ of other light receiving windows.

The ninth embodiment shown in FIG. 5 (B) is different from the seventh embodiment shown in FIG. 4 (B) in the center position of the light receiving window of the adjacent color filter G and the light receiving window of the color filter G. The distance between the center of the color filter R and the center position of the light receiving window is twice the pitch P ₃ of the other light receiving windows.

FIGS. 6A and 6B are partially enlarged views of the tenth and eleventh embodiments of the multi-chip color image sensor of the present invention.

FIGS. 7A and 7B are partially enlarged views of the twelfth and thirteenth embodiments of the multi-chip color image sensor of the present invention.

FIGS. 8A and 8B are partially enlarged views of the 14th and 15th embodiments of the multi-chip color image sensor of the present invention.

9 (A) and 9 (B) are partially enlarged views of the 16th and 17th embodiments of the multi-chip color image sensor of the present invention.

Each of the embodiments shown in FIGS. 6 (A) and 6 (B) has three light receiving windows arranged side by side in the sub-scanning direction at the end portion of the semiconductor image sensor. One color light receiving element is constructed with the light receiving window of the adjacent color filter.

Each of the embodiments shown in FIGS. 7 (A) and (B) to FIGS. 9 (A) and (B) has four light receiving windows arranged side by side in the sub-scanning direction at the end of the semiconductor image sensor. The four light receiving windows constitute one color light receiving element.

In each drawing, 26 is a light receiving window which constitutes one color light receiving element.

In the tenth embodiment shown in FIG. 6 (A), the light receiving windows of the color filters Cy and Mg are arranged on both sides of the light receiving window of the color filter G arranged similarly to the other light receiving windows. The two light receiving windows are the “light receiving windows arranged side by side in the sub-scanning direction” as referred to in the present application. The three light receiving windows and the light receiving window Ye of the color filter immediately adjacent to each other constitute one color light receiving element.

Here, the distance between the center position of the light receiving window of the adjacent color filter Ye and the center position of the light receiving window of the color filter G, which is the light receiving window juxtaposed in the sub-scanning direction, is
It is equal to the pitch P ₃ of other light receiving windows.

In the eleventh embodiment shown in FIG. 6B, the light receiving windows of the color filters Cy and Mg are arranged on the light receiving window of the color filter G.

In the twelfth embodiment shown in FIG. 7 (A), the light receiving window of the color filter Ye is arranged on the light receiving window of the color filter G arranged similarly to the other light receiving windows, and the light receiving window of the color filter G is arranged below the light receiving window. Light receiving windows for the color filters Cy and Mg are arranged. The four light receiving windows are the light receiving windows “arranged side by side in the sub-scanning direction” in the present application.

Here, the distance between the center position of the light receiving window of the adjacent color filter Mg and the center position of the light receiving window of the color filter G, which is a light receiving window juxtaposed in the sub-scanning direction, is
It is twice the pitch P ₃ of the other light receiving windows.

The thirteenth embodiment shown in FIG. 7 (B) is a color filter.
The light receiving windows of Ye and G and the light receiving windows of the color filters Cy and Mg are arranged so that the middles thereof coincide with the centers of other light receiving windows arranged in the main scanning direction.

In the fourteenth embodiment shown in FIG. 8A, the light receiving window of the color filter Cy is arranged on the light receiving window of the color filter G arranged in the same manner as the other light receiving windows, and the light receiving window of the color filter G is arranged below the light receiving window. Light receiving windows for the color filters Ye and Mg are arranged. The four light receiving windows are the light receiving windows “arranged side by side in the sub-scanning direction” in the present application.

Here, the distance between the center position of the light receiving window of the adjacent color filter Cy and the center position of the light receiving window of the color filter G, which is the light receiving window juxtaposed in the sub-scanning direction, is
It is three times the pitch P ₃ of the other light receiving windows.

The fifteenth embodiment shown in FIG. 8 (B) is a color filter.
The light-receiving windows for Cy, G and the light-receiving windows for the color filters 0Ye, Mg are arranged so that their middles coincide with the centers of other light-receiving windows arranged in the main scanning direction.

Compared to the fourteenth embodiment shown in FIG. 8 (A), the sixteenth embodiment shown in FIG. 9 (A) is juxtaposed in the sub-scanning direction with the center position of the light-receiving window of the adjacent color filter Cy. The distance from the center position of the light receiving window of the color filter G, which is the light receiving window,
It is four times the pitch P ₃ of other light receiving windows.

The seventeenth embodiment shown in FIG. 9 (B) is different from the fifteenth embodiment shown in FIG. 8 (B) in the center position of the light receiving window of the color filter Cy immediately adjacent thereto and the color filters Cy and G. The distance between the center position of the middle of the light receiving window and the light receiving windows of the color filters Ye and Mg is set to four times the pitch P ₃ of the other light receiving windows.

[Effects of the Invention] As described in detail above, according to the multi-chip color image sensor of the present invention, the following effects can be obtained.

(1) Color 1 at the joint of the semiconductor image sensor
It is possible to make the pitch corresponding to the dots close to the regular pitch, and it is possible to almost eliminate the influence of the joint image in the output image.

(2) The gap between the semiconductor image sensors (the gap between the semiconductor image sensors) can be kept the same as in the case of the conventional monochrome sensor, and the mounting accuracy can be handled by the conventional die bonder.

(3) Compared to the 3-line method, external parts such as memory are not required, and the system becomes simpler.

(4) The number of chips is 1/3 of that of the third method (three rows of chips) arranged in the conventional example, resulting in cost reduction and assembly time reduction.

[Brief description of the drawings]

FIG. 1 is a partially enlarged view of the first embodiment of the multi-chip color image sensor of the present invention. 2 (A) and 2 (B) are partially enlarged views of the second and third embodiments of the multi-chip color image sensor of the present invention. 3 (A) and 3 (B) are partial enlarged views of the fourth and fifth embodiments of the multi-chip color image sensor of the present invention. 4 (A) and 4 (B) are partially enlarged views of the sixth and seventh embodiments of the multi-chip color image sensor of the present invention. 5 (A) and 5 (B) are partially enlarged views of the eighth and ninth embodiments of the multi-chip color image sensor of the present invention. FIGS. 6A and 6B are partially enlarged views of the tenth and eleventh embodiments of the multi-chip color image sensor of the present invention. FIGS. 7A and 7B are partially enlarged views of the twelfth and thirteenth embodiments of the multi-chip color image sensor of the present invention. FIGS. 8A and 8B are partially enlarged views of the 14th and 15th embodiments of the multi-chip color image sensor of the present invention. 9 (A) and 9 (B) are partially enlarged views of the 16th and 17th embodiments of the multi-chip color image sensor of the present invention. 10 and 11 are schematic plan views of the overall configuration of an embodiment of the multi-chip color image sensor of the present invention. 12 (A) and 12 (B) are partially enlarged views of a multi-chip color image sensor for explaining the present invention. FIG. 13 is a schematic plan view of a multi-chip type semiconductor image sensor of the present invention. FIG. 14 is an enlarged view of a portion A of the above multi-chip type semiconductor image sensor. FIG. 15 is a block diagram showing an optical system using the multi-chip type semiconductor image sensor. FIG. 16 (A) is an explanatory view showing the arrangement of the light receiving windows in the case of monochrome, and FIG. 16 (B) is an explanatory view showing the arrangement of the light receiving windows in the case of color. FIG. 17 is an explanatory view showing the arrangement of the light receiving windows. FIG. 18 is an explanatory view showing the arrangement of semiconductor image sensors. FIG. 19 is an explanatory diagram for illustrating the main scanning direction and the main scanning direction. FIG. 20 is an explanatory view showing a light receiving window arrangement of a conventional in-line type multi-chip color image sensor. FIG. 21 is an explanatory view showing the arrangement of light receiving windows of a conventional multi-chip color image sensor of the 3-line system. 1: Manuscript, 4, 23: Circuit board, 5: Selfoc lens array,
6: LED, 7,7a, 7b, 9,21: a light receiving _{window, 8a, 8b, S 1 ~S} n, 10~13,2
0: Semiconductor image sensor, 22, 24: 1 dot of color (1
Three light receiving windows that make up one color light receiving element).

Claims (6)

(57) [Claims] 1. A multi-chip color image sensor in which a plurality of semiconductor image sensors having a plurality of light receiving windows are arranged, and one color light receiving element is constituted by a plurality of light receiving windows in the main scanning direction. A multi-chip color image sensor, characterized in that a part or all of a plurality of light receiving windows constituting the color light receiving element of a certain section are arranged side by side in the sub-scanning direction. 2. The multi-chip color image sensor according to claim 1, wherein one of the plurality of light receiving windows arranged in the sub-scanning direction is aligned with another light receiving window parallel to the main scanning direction. A multi-chip color image sensor characterized by being arranged. 3. The multi-chip color image sensor according to claim 1, wherein a plurality of (n) light receiving windows juxtaposed in the sub-scanning direction receive the nth light from the outer edge of the first light receiving window. A multi-chip color image sensor, wherein the distance to the outer edge of the window is n times or less the pitch of other light receiving windows in the main scanning direction. 4. The multi-chip color image sensor according to claim 1, 2 or 3, wherein a plurality of (n) light receiving windows juxtaposed in the sub-scanning direction have the same center position in the main scanning direction as the main semiconductor image sensor. A multi-chip color image sensor, characterized in that the distance between the light receiving window adjacent in the scanning direction and the center position of the light receiving window in the main scanning direction is twice the pitch of the light receiving windows in the other main scanning directions. 5. The multi-chip color image sensor according to claim 1, 2, 3 or 4, wherein a plurality of light receiving windows juxtaposed in the sub-scanning direction are provided with color filters of different colors, and the other light receiving windows are arranged. Also, in the multi-chip color image sensor, the color filters of the different colors are sequentially arranged. 6. The multi-chip color image sensor according to claim 5, wherein some or all of the color filters of different colors are a combination selected from red, green, blue or cyan, magenta and yellow. Multi-chip color image sensor.