JP2694454B2 - Solid electrolytic capacitors - Google Patents
Solid electrolytic capacitorsInfo
- Publication number
- JP2694454B2 JP2694454B2 JP63211928A JP21192888A JP2694454B2 JP 2694454 B2 JP2694454 B2 JP 2694454B2 JP 63211928 A JP63211928 A JP 63211928A JP 21192888 A JP21192888 A JP 21192888A JP 2694454 B2 JP2694454 B2 JP 2694454B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- film layer
- heterocyclic compound
- polymer thin
- metal substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000003990 capacitor Substances 0.000 title claims description 36
- 239000007787 solid Substances 0.000 title claims description 27
- 239000010409 thin film Substances 0.000 claims description 65
- 150000002391 heterocyclic compounds Chemical class 0.000 claims description 63
- 229920000642 polymer Polymers 0.000 claims description 57
- 229910052751 metal Inorganic materials 0.000 claims description 40
- 239000002184 metal Substances 0.000 claims description 40
- 239000000758 substrate Substances 0.000 claims description 37
- 239000010408 film Substances 0.000 claims description 18
- 239000004020 conductor Substances 0.000 claims description 10
- 229920001940 conductive polymer Polymers 0.000 claims description 8
- 239000012212 insulator Substances 0.000 claims description 5
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 16
- 239000008151 electrolyte solution Substances 0.000 description 10
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 6
- 238000006116 polymerization reaction Methods 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- YLQBMQCUIZJEEH-UHFFFAOYSA-N Furan Chemical compound C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 4
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 239000007784 solid electrolyte Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 2
- NLZUEZXRPGMBCV-UHFFFAOYSA-N Butylhydroxytoluene Chemical class CC1=CC(C(C)(C)C)=C(O)C(C(C)(C)C)=C1 NLZUEZXRPGMBCV-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000010407 anodic oxide Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003792 electrolyte Substances 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229920000128 polypyrrole Polymers 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 229930192474 thiophene Natural products 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229940126062 Compound A Drugs 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- NLDMNSXOCDLTTB-UHFFFAOYSA-N Heterophylliin A Natural products O1C2COC(=O)C3=CC(O)=C(O)C(O)=C3C3=C(O)C(O)=C(O)C=C3C(=O)OC2C(OC(=O)C=2C=C(O)C(O)=C(O)C=2)C(O)C1OC(=O)C1=CC(O)=C(O)C(O)=C1 NLDMNSXOCDLTTB-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 125000000623 heterocyclic group Chemical group 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/15—Solid electrolytic capacitors
- H01G9/151—Solid electrolytic capacitors with wound foil electrodes
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明はピロール、フラン、チオフェン等の複素環式
化合物の有機半導体を電解質とする固体電解コンデンサ
に関し、特に小容量の固体電解コンデンサに関するもの
である。TECHNICAL FIELD The present invention relates to a solid electrolytic capacitor using an organic semiconductor of a heterocyclic compound such as pyrrole, furan and thiophene as an electrolyte, and more particularly to a solid electrolytic capacitor having a small capacity. is there.
〔従来の技術〕 従来固体電解コンデンサには、二酸化マンガン（Mn
O2）やTCNQ塩等を固体電解質としたものがあるが、この
二酸化マンガン（MnO2）やTCNQ塩等を固体電解質とする
固体電解コンデンサはその製造方法等に難点があった。
そこで本出願人は製造方法が容易でコンデンサ特性の優
れた複素環式化合物のポリマー層を固体電解質とする新
しい固体電解コンデンサを開発している（例えば特開昭
61−2315号公報、特開昭60−244017号公報、特願昭62−
73741号等）。[Prior Art] Manganese dioxide (Mn
There are some which use O 2 ), TCNQ salt, etc. as a solid electrolyte, but the solid electrolytic capacitor using this manganese dioxide (MnO 2 ) or TCNQ salt etc. as a solid electrolyte has drawbacks in its manufacturing method and the like.
Therefore, the present applicant has developed a new solid electrolytic capacitor using a polymer layer of a heterocyclic compound, which is easy to manufacture and has excellent capacitor characteristics, as a solid electrolyte (see, for example, Japanese Patent Application Laid-Open No. S60-18753)
61-2315, Japanese Patent Laid-Open No. 60-244017, Japanese Patent Application No. 62-
No. 73741).
上記従来の複素環式化合物のポリマー層を電解質とす
る固体電解コンデンサは、等価直列抵抗（ESR）が小さ
い等種々のコンデンサ特性において優れたものではある
が、漏洩電流や温度特性の点で問題があり、この問題を
解決するため種々の複雑な工程の対策をとる必要があっ
た。The above-mentioned conventional solid electrolytic capacitor using a polymer layer of a heterocyclic compound as an electrolyte is excellent in various capacitor characteristics such as a small equivalent series resistance (ESR), but there are problems in terms of leakage current and temperature characteristics. Therefore, in order to solve this problem, it is necessary to take measures for various complicated steps.
本発明は上述の点に鑑みてなされたもので、特別な対
策を取る必要がなく、特に耐熱性が従来のフィルムコン
デンサに比較して優れた固体電解コンデンサを提供する
ことにある。The present invention has been made in view of the above points, and it is an object of the present invention to provide a solid electrolytic capacitor which does not require any special measures and is particularly excellent in heat resistance as compared with conventional film capacitors.
上記課題を解決するため本発明は、固体電解コンデン
サを下記のように構成した。In order to solve the above problems, the present invention has a solid electrolytic capacitor configured as follows.
導電性の金属基体の表面に複素環式化合物のポリマー
薄膜層を形成し、該複素環式化合物のポリマー薄膜層を
絶縁体化し、該絶縁体化された複素環式化合物のポリマ
ー薄膜層の表面に導電性の複素環式化合物のポリマー薄
膜層を形成し、該導電性の複素環式化合物のポリマー薄
膜層の表面に導電体層を形成し、該導電体層を一方の電
極とすると共に、前記金属基体を他方の電極とすること
を特徴とする。A polymer thin film layer of a heterocyclic compound is formed on the surface of a conductive metal substrate, the polymer thin film layer of the heterocyclic compound is made into an insulator, and the surface of the polymer thin film layer of the insulated heterocyclic compound is formed. To form a polymer thin film layer of a conductive heterocyclic compound, to form a conductor layer on the surface of the polymer thin film layer of a conductive heterocyclic compound, the conductor layer as one of the electrodes, The metal substrate is used as the other electrode.
また、導電性の金属基板の所定部分に絶縁帯層を形成
して該金属基体の表面を２つに区分し、該区分された金
属基板の一方の表面に複素環式化合物のポリマー薄膜層
を形成し、該複素環式化合物のポリマー薄膜層を絶縁体
化し、該絶縁体化された複素環式化合物のポリマー薄膜
層の表面に導電性の複素環式化合物のポリマー薄膜層を
形成し、該導電性の複素環式化合物のポリマー薄膜層の
表面に導電体層を形成し、該導電体層を一方の電極とす
ると共に、前記金属基板を他方の電極とすることを特徴
とする。In addition, an insulating band layer is formed on a predetermined portion of a conductive metal substrate to divide the surface of the metal substrate into two, and a polymer thin film layer of a heterocyclic compound is formed on one surface of the divided metal substrate. And insulating the polymer thin film layer of the heterocyclic compound to form an insulator, and forming a conductive polymer thin film layer of the heterocyclic compound on the surface of the polymer thin film layer of the insulated heterocyclic compound, A conductive layer is formed on the surface of a polymer thin film layer of a conductive heterocyclic compound, and the conductive layer serves as one electrode and the metal substrate serves as the other electrode.
また、前記絶縁体化された複素環式化合物のポリマー
薄膜層を形成する金属基体又は金属基板の表面には誘電
体酸化皮膜層が形成されていることを特徴とする。Further, a dielectric oxide film layer is formed on the surface of the metal substrate or the metal substrate forming the polymer thin film layer of the insulated heterocyclic compound.
固体電解コンデンサを上記の如く構成することによ
り、絶縁体化した複素環式化合物のポリマー薄膜層が誘
電体として作用することになり、複素環式化合物のポリ
マーは酸素のない雰囲気中では400℃付近まで熱的に安
定したものであるから、例えば従来のフィルムコンデン
サに比べても耐熱性の優れた固体電解コンデンサとな
る。By configuring the solid electrolytic capacitor as described above, the polymer thin film layer of the heterocyclic compound that has been made into an insulator acts as a dielectric, and the polymer of the heterocyclic compound is around 400 ° C in an oxygen-free atmosphere. Since it is also thermally stable, it becomes a solid electrolytic capacitor having excellent heat resistance as compared with, for example, conventional film capacitors.
また、誘電体は絶縁体化された複素環式化合物のポリ
マー薄膜層であるから、下記のように漏洩電流の小さい
固体電解コンデンサとなる。Further, since the dielectric is a polymer thin film layer of an insulating heterocyclic compound, it becomes a solid electrolytic capacitor having a small leakage current as described below.
導電性の複素環式化合物のポリマー薄膜層を、従来の
固体電解コンデンサのように金属基体又は基板の陽極酸
化皮膜上に電解酸化重合で形成する場合には、該陽極酸
化皮膜の格子欠陥部を通して流れる電流を利用している
ため、多少共陽極酸化皮膜を破壊する欠点があったが、
本発明では絶縁化した複素環式化合物のポリマー薄膜層
を形成した金属基体又は基板を電解液に浸漬し、該電解
液を該ポリマー層に含浸させ、該含浸した電解液中を流
れる電流を利用して導電性の複素環式化合物のポリマー
薄膜層を形成することにより、前記絶縁体化した複素環
式化合物のポリマー薄膜層が破壊されることなく、導電
性の複素環式化合物のポリマー薄膜層が形成できる。こ
のため漏れ電流の小さい固体電解コンデンサとなる。ま
た、導電性の複素環式化合物のポリマー薄膜層を電解酸
化重合以外の方法、例えば真空蒸着法、化学重合法で形
成する場合も、漏れ電流の小さい固体電解コンデンサと
なる。When a conductive polymer thin film of a heterocyclic compound is formed by electrolytic oxidative polymerization on the anodic oxide film of a metal substrate or substrate as in a conventional solid electrolytic capacitor, the lattice defect portion of the anodic oxide film is used. There is a drawback that the co-anodized film is destroyed because it uses the flowing current.
In the present invention, a metal substrate or substrate on which a polymer thin film layer of an insulated heterocyclic compound is formed is immersed in an electrolytic solution, the electrolytic solution is impregnated into the electrolytic solution, and an electric current flowing in the impregnated electrolytic solution is used. To form a polymer thin film layer of a conductive heterocyclic compound, the polymer thin film layer of a conductive heterocyclic compound is not destroyed, without destroying the polymer thin film layer of the insulated heterocyclic compound. Can be formed. Therefore, the solid electrolytic capacitor has a small leakage current. Also, when the conductive polymer thin film layer of a heterocyclic compound is formed by a method other than electrolytic oxidation polymerization, such as vacuum deposition or chemical polymerization, a solid electrolytic capacitor with a small leakage current can be obtained.
以下、本発明の一実施例を図面に基づいて説明する。 Hereinafter, an embodiment of the present invention will be described with reference to the drawings.
第１図は、本発明に係る固体電解コンデンサの構造を
示す図で、同図（ａ）は一部切断外観斜視図、同図
（ｂ）はその切断部分の拡大断面図である。図示するよ
うに固体電解コンデンサは、導電性の金属基板１の所定
位置の全周面に帯状の絶縁帯層２を形成して金属基板１
の全表面を２つに区分し、その一方に絶縁体化された複
素環式化合物のポリマー薄膜層３を形成し、その全表面
に導電性の複素環式化合物のポリマー薄膜層４を形成
し、更にその上にグラファイト層５−１と銀ペースト層
５−２とからなる導電体層５を順次形成した構造であ
る。また、導電体層５の銀ペースト層５−２には電極端
子６を銀ペースト等の導電ペーストで接着固定し、絶縁
帯層２で区分された他方の金属基板１に電極端子６を溶
接等で取り付けている。FIG. 1 is a diagram showing the structure of a solid electrolytic capacitor according to the present invention, in which FIG. 1 (a) is a partially cutaway external perspective view, and FIG. 1 (b) is an enlarged sectional view of the cut part. As shown in the figure, the solid electrolytic capacitor has a metal substrate 1 in which a band-shaped insulating strip layer 2 is formed on the entire circumferential surface of a conductive metal substrate 1 at a predetermined position.
Is divided into two parts, one of which is formed with an insulating polymer thin film layer 3 of a heterocyclic compound, and the entire surface of which is formed a conductive polymer thin film layer 4 of a heterocyclic compound. Further, a conductor layer 5 composed of a graphite layer 5-1 and a silver paste layer 5-2 is further formed thereon in this order. Further, the electrode terminal 6 is adhered and fixed to the silver paste layer 5-2 of the conductor layer 5 with a conductive paste such as silver paste, and the electrode terminal 6 is welded to the other metal substrate 1 divided by the insulating strip layer 2. It is attached in.
以下、上記構造の固体電解コンデンサの各部の詳細及
びその製造方法を第２図（ａ）〜（ｄ）を用いて詳細に
説明する。Hereinafter, the details of each part of the solid electrolytic capacitor having the above structure and the manufacturing method thereof will be described in detail with reference to FIGS. 2 (a) to 2 (d).
金属基板１は導電性を有する金属からなるものであれ
ばよく、アルミニウム、チタン、タンタル等の弁作用を
有する金属に限定されるものではなく、例えば、銅等の
導電性を有する金属であればよい。The metal substrate 1 may be made of a conductive metal, and is not limited to a metal having a valve action such as aluminum, titanium and tantalum. For example, a conductive metal such as copper may be used. Good.
絶縁帯層２は、金属基板１の所定位置に形成され｛第
２図（ａ）に参照｝、該金属基板１の全表面を２つに区
分し、更に後の絶縁体化された複素環式化合物のポリマ
ー薄膜層３の形成及び導電性の複素環式化合物のポリマ
ー薄膜層４の形成工程で絶縁性等が劣化しない材料から
形成されるものであればよく、例えば絶縁樹脂材を金属
基板１の所定位置の全周に帯状に塗布して形成し、硬化
させて形成しても良い。The insulating strip layer 2 is formed at a predetermined position on the metal substrate 1 (see FIG. 2 (a)), divides the entire surface of the metal substrate 1 into two parts, and further forms an insulating heterocyclic ring. Any material may be used as long as it is formed of a material that does not deteriorate the insulating property in the steps of forming the polymer thin film layer 3 of the formula compound and forming the polymer thin film layer 4 of the conductive heterocyclic compound. Alternatively, it may be formed by applying a strip-shaped coating on the entire circumference of a predetermined position of No. 1 and curing it.
絶縁体化させた複素環式化合物のポリマー薄膜層３及
び導電性の複素環式化合物のポリマー薄膜層４も複素環
式化合物のポリマー薄膜層の形成工程は前者の絶縁体化
の点を除けば両者略同一である。複素環式化合物として
は、ピロール、フラン、チオフェン等があり、ここでは
ピロールのポリマーの薄膜層の形成を説明する。The steps of forming the polymer thin film layer 3 of the heterocyclic compound and the polymer thin film layer 4 of the conductive heterocyclic compound, which are made into an insulating material, are the same as those in the step of forming the polymer thin film layer of the heterocyclic compound, except for the former point of insulation. Both are almost the same. Heterocyclic compounds include pyrrole, furan, thiophene, etc. Here, formation of a thin film layer of a polymer of pyrrole will be described.
アセトニトリル或いはアセトンを溶媒としてピロール
とボロジサリチル酸塩のアンモニウムボロジサリチレー
ト（ABS）とを含む電解液中に前記金属基板１の絶縁帯
層２で区分された一方の部分を浸漬し、金属基板１を陽
極として所定の直流電流を通電することにより、前記電
解液中で電解酸化重合が起こり、金属基板１の表面にピ
ロールのポリマー薄膜層、即ちポリピロール層が形成さ
れる。なお、このポリピロール層の形成方法は本出願人
が先に出願した特開昭62−227647号に詳細に開示してい
るのでここではその詳細を省略する。One part of the metal substrate 1 divided by the insulating strip layer 2 is immersed in an electrolytic solution containing pyrrole and ammonium borodisalicylate (ABS) of borodisalicylate as a solvent using acetonitrile or acetone as a solvent. By applying a predetermined direct current with 1 as an anode, electrolytic oxidative polymerization occurs in the electrolytic solution, and a polymer thin film layer of pyrrole, that is, a polypyrrole layer is formed on the surface of the metal substrate 1. Since the method for forming this polypyrrole layer is disclosed in detail in Japanese Patent Application Laid-Open No. 62-227647 filed by the applicant of the present invention, its details are omitted here.
上記ピロールのポリマー薄膜層は導電性を有するか
ら、これを絶縁化して絶縁体化した複素環式化合物のポ
リマー薄膜層３｛第２図（ｂ）参照｝とするには、ピロ
ールのポリマー薄膜層を水を含む溶液中に浸漬するか、
或いは酸素を含む高温槽（180℃〜350℃）中に放置する
ことにより、水中の酸素或いは酸素雰囲気中の酸素と、
ポリマー薄膜層が反応し、ポリマー薄膜層が完全に絶縁
化される。Since the polymer thin film layer of pyrrole has conductivity, the polymer thin film layer 3 of pyrrole can be obtained by insulating the polymer thin film layer 3 of heterocyclic compound (see FIG. 2 (b)). Is immersed in a solution containing water, or
Or by leaving it in a high temperature tank containing oxygen (180 ℃ ~ 350 ℃), oxygen in water or oxygen in oxygen atmosphere,
The polymer thin film layer reacts and the polymer thin film layer is completely insulated.
この絶縁体化した複素環式化合物のポリマー薄膜層３
の上に上記と同じ手法で導電性を有する複素環式化合物
のポリマー薄膜層４を形成する｛第２図（ｃ）参照｝。
ここで絶縁体化された複素環式化合物のポリマー薄膜層
３は、例えば水が浸透しない完全なフィルム状の膜では
なく、粒子が集合した形状の薄膜であり、該絶縁化され
た複素環式化合物のポリマー薄膜層３の上に導電性の複
素環式化合物のポリマー薄膜層４を形成するため、金属
基板１をピロール、アンモニウムボロジサリチレート
（ABS）を含むアセトニトリル電解液中に浸漬すると、
該絶縁化された複素環式化合物のポリマー薄膜層３の粒
子間の隙間を通過して、該電解液が含浸する。従って、
金属基板１を一方の電極、電解液を他方の電極として両
電極間に電圧を印加することにより、該含浸した電解液
を介して部分的に電流が流れることになる。この電流の
流れる所を利用して前記絶縁体化された複素環式化合物
のポリマー薄膜層３の上に導電性の複素環式化合物のポ
リマー薄膜層４を形成することができる。This polymer thin film layer 3 of an insulated heterocyclic compound
A polymer thin film layer 4 of a heterocyclic compound having conductivity is formed thereon by the same method as described above (see FIG. 2 (c)).
Here, the polymer thin film layer 3 of an insulated heterocyclic compound is not a perfect film-like film that does not allow water to permeate, but a thin film in the form of aggregated particles. When the metal substrate 1 is immersed in an acetonitrile electrolyte solution containing pyrrole and ammonium borodisalicylate (ABS) in order to form the conductive polymer thin film layer 4 of the heterocyclic compound on the polymer thin film layer 3 of the compound,
The electrolyte solution is impregnated through the gaps between the particles of the polymer thin film layer 3 of the insulated heterocyclic compound. Therefore,
By applying a voltage between both electrodes using the metal substrate 1 as one electrode and the electrolytic solution as the other electrode, a current partially flows through the impregnated electrolytic solution. By utilizing the place where the current flows, the conductive polymer thin film layer 4 of the heterocyclic compound can be formed on the polymerized thin film layer 3 of the heterocyclic compound.
なお、複素環式化合物のポリマー薄膜層は、上記のよ
うに電解酸化重合により形成するものに限定されるもの
ではなく、例えば、真空蒸着法、化学重合法等によって
も形成できる。The polymer thin film layer of the heterocyclic compound is not limited to the one formed by electrolytic oxidation polymerization as described above, and may be formed by a vacuum vapor deposition method, a chemical polymerization method or the like.
次に、導電性の複素環式化合物のポリマー薄膜層４の
上にグラファイト層５−１を塗布し硬化させ、続いて銀
ペースト層５−２を塗布し硬化させて導電体層５を形成
する｛第２図（ｄ）参照｝。Next, the graphite layer 5-1 is applied on the polymer thin film layer 4 of the conductive heterocyclic compound and cured, and then the silver paste layer 5-2 is applied and cured to form the conductor layer 5. {See FIG. 2 (d)}.
固体電解コンデンサを上記構成とすることにより、絶
縁体化した複素環式化合物のポリマー薄膜層３はフィル
ムコンデンサのフィルムに相当することになる。しか
も、複素環式化合物のポリマーは、400℃付近まで酸素
の雰囲気中では、熱的に安定であるから、樹脂フィルム
を用いるフィルムコンデンサに比較し耐熱性の優れたも
のとなる。また、複素環式化合物のポリマー薄膜層３は
完全に絶縁化されているので、漏洩電流の極めて小さい
コンデンサとなる。By configuring the solid electrolytic capacitor as described above, the polymer thin film layer 3 of the insulating heterocyclic compound corresponds to the film of the film capacitor. Moreover, since the polymer of the heterocyclic compound is thermally stable in an oxygen atmosphere up to around 400 ° C., it has excellent heat resistance as compared with a film capacitor using a resin film. Further, since the polymer thin film layer 3 of the heterocyclic compound is completely insulated, it becomes a capacitor having an extremely small leakage current.
なお、上記実施例では金属基板１に導電性の金属板を
用いたが、板状に限定されるものではなく、また、絶縁
帯層２は金属基板１の全表面を２つに区分し、その一方
に絶縁体化した複素環式化合物のポリマー薄膜層３や導
電性の複素環式化合物のポリマー薄膜層４等を形成する
のに好都合なものであり、本発明の固体電解コンデンサ
においては、必ずしも必要なものではない。Although a conductive metal plate is used for the metal substrate 1 in the above-mentioned embodiment, it is not limited to a plate shape, and the insulating strip layer 2 divides the entire surface of the metal substrate 1 into two. It is convenient for forming an insulating polymer thin film layer 3 of a heterocyclic compound, a conductive polymer thin film layer 4 of a heterocyclic compound, or the like on one side, and in the solid electrolytic capacitor of the present invention, It is not absolutely necessary.
また、金属基板１として、例えば表面に誘電体酸化皮
膜を形成できるアルミニウム、チタン、タンタル等の弁
作用を有する金属を用い、金属基板１の表面に誘電体酸
化皮膜を形成し、その上に絶縁体化された複素環式化合
物のポリマー薄膜層３を形成し、この誘電体酸化皮膜層
と絶縁体化した複素環式化合物のポリマー薄膜層３を誘
電体とすることにより、耐圧が更に向上した固体電解コ
ンデンサとすることができる。Further, as the metal substrate 1, for example, a metal having a valve action such as aluminum, titanium and tantalum capable of forming a dielectric oxide film on the surface is used, and a dielectric oxide film is formed on the surface of the metal substrate 1 and insulation is performed thereon. The withstand voltage was further improved by forming the polymerized thin film layer 3 of the heterocyclic compound and using this dielectric oxide film layer and the polymerized thin film layer 3 of the heterocyclic compound as the dielectric. It can be a solid electrolytic capacitor.
以上説明したように本発明によれば、下記のような優
れた効果が得られる。As described above, according to the present invention, the following excellent effects can be obtained.
絶縁体化した複素環式化合物のポリマー薄膜層が誘電
体として作用することになり、複素環式化合物のポリマ
ーは酸素のない雰囲気中では400℃付近まで熱的に安定
したものであるから、熱的に安定したものとなり、例え
ば従来のフィルムコンデンサに比べても耐熱性の優れた
固体電解コンデンサとなる。The insulating polymer thin film of heterocyclic compound acts as a dielectric, and the polymer of heterocyclic compound is thermally stable up to around 400 ° C in an oxygen-free atmosphere. The resulting solid electrolytic capacitor has excellent heat resistance compared to conventional film capacitors.
金属基体又は金属基板の表面には誘電体酸化皮膜層を
形成し、その上に絶縁化した複素環式化合物のポリマー
薄膜層を形成し、これをコンデンサの誘電体とするか
ら、より耐圧の向上した固体電解コンデンサとなる。A dielectric oxide film layer is formed on the surface of a metal substrate or a metal substrate, and a polymer thin film layer of an insulated heterocyclic compound is formed on the dielectric oxide film layer, which is used as the dielectric of the capacitor. It becomes a solid electrolytic capacitor.
第１図は本発明に係る固体電解コンデンサの構造を示す
図で、同図（ａ）は一部切断外観斜視図、同図（ｂ）は
その切断部分の拡大断面図、第２図（ａ）乃至（ｄ）は
それぞれ固体電解コンデンサの製造工程を示す図であ
る。 図中、１……金属基板、２……絶縁帯層、３……絶縁体
化された複素環式化合物のポリマー薄膜層、４……導電
性の複素環式化合物のポリマー薄膜層、５……導電体
層、6,7……電極端子。FIG. 1 is a diagram showing the structure of a solid electrolytic capacitor according to the present invention. FIG. 1 (a) is a partially cut external perspective view, FIG. 1 (b) is an enlarged sectional view of the cut part, and FIG. 2 (a). 8A to 8D are views showing the manufacturing process of the solid electrolytic capacitor. In the figure, 1 ... Metal substrate, 2 ... Insulating band layer, 3 ... Insulated polymer thin film of heterocyclic compound, 4 ... Conductive heterocyclic compound thin film layer, 5 ... … Conductor layer, 6,7 …… Electrode terminals.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 高橋 聖也 神奈川県川崎市高津区北見方260番地 日通工株式会社内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Seiya Takahashi 260 Kitamikata, Takatsu-ku, Kawasaki-shi, Kanagawa Nittsu Kogyo Co., Ltd.
Claims (3)
のポリマー薄膜層を形成し、該複素環式化合物のポリマ
ー薄膜層を絶縁体化し、該絶縁体化された複素環式化合
物のポリマー薄膜層の表面に導電性の複素環式化合物の
ポリマー薄膜層を形成し、該導電性の複素環式化合物の
ポリマー薄膜層の表面に導電体層を形成し、該導電体層
を一方の電極とすると共に、前記金属基体を他方の電極
とすることを特徴とする固体電解コンデンサ。1. A polymer thin film layer of a heterocyclic compound is formed on the surface of a conductive metal substrate, the polymer thin film layer of the heterocyclic compound is made into an insulator, and the heterocyclic compound of the insulator is made of A polymer thin film layer of a conductive heterocyclic compound is formed on the surface of the polymer thin film layer, a conductor layer is formed on the surface of the polymer thin film layer of the conductive heterocyclic compound, and the conductor layer is A solid electrolytic capacitor comprising an electrode and the metal substrate as the other electrode.
形成して該金属基板の表面を２つに区分し、該区分され
た金属基板の一方の表面に複素環式化合物のポリマー薄
膜層を形成し、該複素環式化合物のポリマー薄膜層を絶
縁体化し、該絶縁体化された複素環式化合物のポリマー
薄膜層の表面に導電性の複素環式化合物のポリマー薄膜
層を形成し、該導電性の複素環式化合物のポリマー薄膜
層の表面に導電体層を形成し、該導電体層を一方の電極
とすると共に、前記金属基板を他方の電極とすることを
特徴とする固体電解コンデンサ。2. A polymer of a heterocyclic compound is formed by forming an insulating band layer on a predetermined portion of a conductive metal substrate to divide the surface of the metal substrate into two, and one surface of the divided metal substrate. Forming a thin film layer, insulating the polymer thin film layer of the heterocyclic compound, and forming a conductive polymer thin film layer of the heterocyclic compound on the surface of the polymer thin film layer of the insulated heterocyclic compound Then, a conductor layer is formed on the surface of the polymer thin film layer of the conductive heterocyclic compound, and the conductor layer serves as one electrode and the metal substrate serves as the other electrode. Solid electrolytic capacitor.
マー薄膜層を形成する金属基体又は金属基板の表面には
誘電体酸化皮膜層が形成されていることを特徴とする請
求項（１）又は（２）記載の固体電解コンデンサ。3. A dielectric oxide film layer is formed on the surface of a metal substrate or a metal substrate forming the polymer thin film layer of the insulated heterocyclic compound. ) Or the solid electrolytic capacitor as described in (2).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63211928A JP2694454B2 (en) | 1988-08-25 | 1988-08-25 | Solid electrolytic capacitors |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63211928A JP2694454B2 (en) | 1988-08-25 | 1988-08-25 | Solid electrolytic capacitors |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0260118A JPH0260118A (en) | 1990-02-28 |
| JP2694454B2 true JP2694454B2 (en) | 1997-12-24 |
Family
ID=16613995
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63211928A Expired - Lifetime JP2694454B2 (en) | 1988-08-25 | 1988-08-25 | Solid electrolytic capacitors |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2694454B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60244017A (en) * | 1984-05-18 | 1985-12-03 | 日通工株式会社 | Method of producing solid electrolytic condenser |
| JP4655339B2 (en) * | 2000-07-07 | 2011-03-23 | 株式会社村田製作所 | Solid electrolytic capacitor element and manufacturing method thereof |
-
1988
- 1988-08-25 JP JP63211928A patent/JP2694454B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0260118A (en) | 1990-02-28 |
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