JP2532252B2 - Method for manufacturing SOI substrate - Google Patents
Method for manufacturing SOI substrateInfo
- Publication number
- JP2532252B2 JP2532252B2 JP62196614A JP19661487A JP2532252B2 JP 2532252 B2 JP2532252 B2 JP 2532252B2 JP 62196614 A JP62196614 A JP 62196614A JP 19661487 A JP19661487 A JP 19661487A JP 2532252 B2 JP2532252 B2 JP 2532252B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- soi substrate
- single crystal
- crystal silicon
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
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- Formation Of Insulating Films (AREA)
- Recrystallisation Techniques (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明はSOI（Silicon On In Sulator）基板の製
造方法に関する。The present invention relates to a method for manufacturing an SOI (Silicon On In Sulator) substrate.
従来、ジャーナルオブアプライドフィジクス第56巻10
号2986〜2988ページ（1984年）に示されているような、
ゾーンメルティング法による石英基板全面にシリコン層
を有するSOI基板の製造方法が知られていた。第２図を
用いてその概要を示す。加熱台を兼ねる保持台４上に、
非単結晶シリコン層を堆積した石英基板５を保持し、前
記石英基板を第２図中矢印方向に移動するストリップヒ
ータ３で加熱することにより、前記非単結晶シリコン層
を融解し、前記非単結晶シリコン層を再結晶化すること
により、SOI基板を得るものである。Previously, Journal of Applied Physics Volume 56 10
No. 2986-2988 (1984),
A method of manufacturing an SOI substrate having a silicon layer on the entire surface of a quartz substrate by the zone melting method has been known. The outline is shown using FIG. On the holding table 4 which also serves as a heating table,
The quartz substrate 5 on which the non-single-crystal silicon layer is deposited is held, and the quartz substrate is heated by the strip heater 3 moving in the direction of the arrow in FIG. 2 to melt the non-single-crystal silicon layer, By recrystallizing the crystalline silicon layer, an SOI substrate is obtained.
しかし、従来のSOI基板の製造方法は、絶縁基板上の
非単結晶シリコン層を融解した後再結晶するという製造
方法を用いているため、放熱などに供う結晶粒界、転
移、積層欠陥が生じやすくなり、大面積にわたり良質の
単結晶シリコン層を持つSOI基板を得ることが困難であ
った。However, since the conventional method for manufacturing an SOI substrate uses a manufacturing method in which a non-single-crystal silicon layer on an insulating substrate is melted and then recrystallized, crystal grain boundaries, transitions, and stacking faults used for heat dissipation are It is easy to occur and it is difficult to obtain an SOI substrate having a good quality single crystal silicon layer over a large area.
そこで、本発明は従来のこのような問題点を解決する
もので、その目的は大面積にわたり良質の単結晶シリコ
ン層を持つSOI基板を提供することにある。Therefore, the present invention solves such a conventional problem, and an object thereof is to provide an SOI substrate having a high quality single crystal silicon layer over a large area.
本発明は、SOI基板の製造方法において、単結晶シリ
コン基板上に酸化珪素、窒化珪素、酸化窒化珪素のいず
れかにアルミニウムを含む絶縁膜を成長させる工程に引
き続いて、前記単結晶シリコン基板を薄膜化する工程を
含むことを特徴とする。The present invention relates to a method for manufacturing an SOI substrate, in which a single crystal silicon substrate is formed into a thin film following the step of growing an insulating film containing aluminum on silicon oxide, silicon nitride or silicon oxynitride on a single crystal silicon substrate. It is characterized in that it includes a step of converting.
以下に、本発明の実施例を図面にもとづいて説明す
る。第１図に本発明にかかるSOI基板の製造方法を示
す。まず、ａ図の如く単結晶シリコン基板１上に、Alを
含むSiO2膜２を成長させる。SiO2膜２の代わりに窒化珪
素又は酸化窒化珪素膜を用いても良い。成長方法は、酸
素、窒化、N2O、H2ガスのうちの少くとも一種類以上と
シラン系ガスを用いたCVD法、又は窒素、酸素、N2Oのう
ちのどちらか一種類以上と、シラン系ガスとO2とH2ガス
を火炎加水分解して成長させる方法、又は蒸着法のいず
れでもよい。前記CVD法、火炎加水分解法を用いる際に
はAlを含む有機金属ガスを、蒸着法を用いる際はAl又は
Al2O3を原材料として、Alを前記SiO2膜又は窒化珪素又
は酸化窒化珪素膜中に含ませる。Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 shows a method for manufacturing an SOI substrate according to the present invention. First, a SiO 2 film 2 containing Al is grown on a single crystal silicon substrate 1 as shown in FIG. Instead of the SiO 2 film 2, a silicon nitride or silicon oxynitride film may be used. The growth method is at least one or more of oxygen, nitriding, N 2 O, and H 2 gas and a CVD method using a silane-based gas, or one or more of nitrogen, oxygen, and N 2 O. Any of a method of flame hydrolysis of silane-based gas and O 2 and H 2 gas to grow, or an evaporation method may be used. The CVD method, when using a flame hydrolysis method, an organometallic gas containing Al, when using a vapor deposition method Al or
Al 2 O 3 is used as a raw material, and Al is contained in the SiO 2 film or the silicon nitride or silicon oxynitride film.
次に、ｂ）図に示す如く、単結晶シリコン基板１を薄膜
化する。薄膜化する方法は、食刻、機械的研磨法、化学
的機械摩法の中の１つあるいはそれらの組み合わせを用
いて行う。Next, the single crystal silicon substrate 1 is thinned as shown in FIG. The thinning method is one of etching, mechanical polishing, chemical mechanical polishing, or a combination thereof.
絶縁膜２中にAlを含有させるのは次の理由からであ
る。単結晶シリコン基板、SiO2膜などの膨張係数は 単結晶シリコン基板 2.4×10-6 SiO2膜 ５〜６×10-7 Al2O3 ８×10-6 となっている。すなわち、単結晶シリコン基板はSiO2膜
より約１桁膨張係数が大きいため、Alを含まないSiO2上
にシリコン層を持つSOI基板は、熱サイクルにより基板
のそり、曲がりを生じる。このため通常の高温のシリコ
ンプロセスで用いることができない。ところが、Alを含
有させることにより、8X10-6という単結晶シリコン基板
よりも大きな膨張係数を持つAl2O3がSiO2膜に形成され
るため、SiO2膜と単結晶シリコン基板との膨張係数差を
小さくすることができる。そのため、高温のシリコンプ
ロセスにおいても基板のそり、曲がりを減少されること
ができるため、通常のシリコンプロセスで使用可能なSO
I基板となる。The reason for including Al in the insulating film 2 is as follows. The expansion coefficient of single crystal silicon substrate, SiO 2 film, etc. is 2.4 × 10 -6 SiO 2 film 5 × 6 -7 Al 2 O 3 8 × 10 -6 . That is, since the single crystal silicon substrate has a coefficient of expansion larger than that of the SiO 2 film by about one digit, the SOI substrate having a silicon layer on SiO 2 that does not contain Al causes warping and bending of the substrate due to thermal cycles. Therefore, it cannot be used in a normal high temperature silicon process. However, expansion coefficient by the inclusion of Al, since the Al 2 O 3 having a large coefficient of expansion than the single crystal silicon substrate that 8X10 -6 are formed in the SiO 2 film, a SiO 2 film and the single crystal silicon substrate The difference can be reduced. Therefore, the warpage and bending of the substrate can be reduced even in the high temperature silicon process.
It becomes the I board.
本発明は以上説明したように、SOI基板の製造方法に
関するものであり、以下にその効果を述べる。As described above, the present invention relates to a method for manufacturing an SOI substrate, and its effects will be described below.
（１） SOI基板上に形成されるシリコン層は単結晶シ
リコン基板の一部であるので、欠陥、電気的特性を劣化
させる不純物の少い良質のシリコン層である。(1) Since the silicon layer formed on the SOI substrate is a part of the single crystal silicon substrate, it is a good quality silicon layer containing few defects and impurities that deteriorate electrical characteristics.
（２） 前記シリコン層の形成法として、単結晶シリコ
ン基板上に絶縁膜を成長させる方法を用いているため単
結晶シリコン基板と同じ面積の、広い面積を持つSOI基
板を得ることができる。(2) Since a method of growing an insulating film on a single crystal silicon substrate is used as a method of forming the silicon layer, an SOI substrate having the same area as the single crystal silicon substrate and a large area can be obtained.
（３） 絶縁膜中にAlを含んでいることにより、単結晶
シリコン基板と絶縁膜との膨張係数差を小さくできるた
め、SOI基板のそり、曲がりなどを軽減できる。(3) By including Al in the insulating film, the difference in expansion coefficient between the single crystal silicon substrate and the insulating film can be reduced, so that warpage or bending of the SOI substrate can be reduced.
（４） 前記SOI基板を製造するための装置は現在半導
体プロセスで通常に使われている装置であり、新しい製
造装置を導入することなく前記SOI基板を製造できるの
で、安価なSOI基板を提供することができる。(4) The device for manufacturing the SOI substrate is a device which is normally used in the semiconductor process at present, and the SOI substrate can be manufactured without introducing a new manufacturing device, thus providing an inexpensive SOI substrate. be able to.
（５） 本発明は、従来例に示したような、アモルファ
ス状の石英基板上に単結晶シリコン層を形成するのでは
なく、単結晶シリコン基板上にSiO2膜を形成する方法を
用いているため、従来例のような高度の技術が不要であ
り、容易にSOI基板を得ることができる。(5) The present invention uses a method of forming a SiO 2 film on a single crystal silicon substrate instead of forming a single crystal silicon layer on an amorphous quartz substrate as shown in the conventional example. Therefore, a high-level technology as in the conventional example is unnecessary, and the SOI substrate can be easily obtained.
第１図（ａ）（ｂ）は本発明にかかるSOI基板の製造方
法図、第２図は従来のSOI基板の製造方法図である。 １……単結晶シリコン基板 ２……SiO2膜1 (a) and 1 (b) are views showing a method of manufacturing an SOI substrate according to the present invention, and FIG. 2 is a view of a method of manufacturing a conventional SOI substrate. 1 ... Single crystal silicon substrate 2 ... SiO 2 film
Claims (1)
素、酸化窒化珪素のいずれかにアルミニウムを含む絶縁
膜を成長させる工程に引き続いて、前記単結晶シリコン
基板を薄膜化する工程を含むことを特徴とするSOI基板
の製造方法。1. A step of thinning the single crystal silicon substrate is continued following the step of growing an insulating film containing aluminum on silicon oxide, silicon nitride or silicon oxynitride on the single crystal silicon substrate. And a method for manufacturing an SOI substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62196614A JP2532252B2 (en) | 1987-08-06 | 1987-08-06 | Method for manufacturing SOI substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62196614A JP2532252B2 (en) | 1987-08-06 | 1987-08-06 | Method for manufacturing SOI substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6439765A JPS6439765A (en) | 1989-02-10 |
| JP2532252B2 true JP2532252B2 (en) | 1996-09-11 |
Family
ID=16360686
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62196614A Expired - Lifetime JP2532252B2 (en) | 1987-08-06 | 1987-08-06 | Method for manufacturing SOI substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2532252B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5046672B2 (en) * | 2007-02-06 | 2012-10-10 | ヨネックス株式会社 | Golf club head |
-
1987
- 1987-08-06 JP JP62196614A patent/JP2532252B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6439765A (en) | 1989-02-10 |
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