JP2598409Y2 - High voltage equipment - Google Patents

Description

[Detailed description of the invention]

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high-voltage device applied to, for example, an ion implanter for boosting a high-potential box containing an ion source and a mass analyzer to a desired high potential.

[0002]

2. Description of the Related Art An ion implanter ionizes an impurity to be diffused, selectively extracts the impurity ions by mass spectrometry using a magnetic field to form an ion beam, and accelerates the ion beam to a predetermined energy if necessary. By irradiating the irradiation object, impurities are implanted into the beam irradiation object, and the impurities which determine the characteristics of the device in the semiconductor process can be implanted into the arbitrary amount and depth at an arbitrary amount with good controllability. It is an important device for manufacturing semiconductor integrated circuits.

In the above ion implantation apparatus, as shown in FIG. 5, the ion source and the mass analyzer are provided with a plurality of support insulators 5.
3 are housed in a high-potential box 51 supported by. The high potential box 51 is boosted to a predetermined high potential by a high voltage power supply 54 that generates a high voltage such as a Cockcroft-Walton type. And this high potential box 51
Are provided in an outer box 52 for X-ray shielding.

[0004] The ion beam extracted from the ion source of the high potential box 51 and subjected to mass analysis by the mass analyzer is guided to an earth potential end station 56 provided outside the outer box 52 through an acceleration tube 55. When the ion beam passes through the accelerating tube 55, it is accelerated by an electric field generated by a potential difference between the high potential high potential box 51 and the ground potential end station 56 to become a high energy ion beam, and set in the end station 56. A beam irradiation object such as a semiconductor wafer is irradiated.

Usually, the high-potential box 51 is provided between the outer wall of the high-potential box 51 and the inner wall of the outer box 52 in order to alleviate the electric field between the outer box 52 at the ground potential and prevent corona discharge. Are installed at the center position in the outer box 52 where the distance L between them becomes equal to each other, and air insulation is performed.

A high-voltage power supply 54 for boosting the high-potential box 51 to a high potential is also provided in the outer box 52.
The high-voltage power supply 54 is conventionally installed vertically on the floor as shown in the figure or horizontally (not shown).

[0007]

[Problems to be Solved by the Invention] In the above conventional configuration,
The distance L between the outer wall surface of the high-potential box 51 and the inner wall surface of the outer box 52 is controlled by the length of the high-voltage power supply 54 provided in the outer box 52 together with the high-potential box 51,
2 leads to an increase in size.

That is, the high-voltage power supply 54 is often formed by molding an assembly of many electric components, and requires a certain insulation distance to insulate it from the atmosphere, and it is difficult to reduce the length. It is. In particular, in a high-energy ion implantation apparatus that performs high-energy ion implantation, a high-potential box 5 is used to accelerate the ion beam to high energy.
1 needs to be boosted to a very high potential, and a large high-voltage power supply 54 is required. The distance L between the outer wall surface of the high-potential box 51 and the inner wall surface of the outer box 52 is determined by the required insulation distance between the high-potential box 51 and the outer box 52.
If the length of the high-voltage power supply 54 is longer than that of the high-energy ion implanter, the outer box 52 cannot be large. This leads to an increase in the size of the entire ion implantation apparatus, which is one factor that increases the manufacturing cost of the ion implantation apparatus.

The present invention has been made in view of the above, and an object of the present invention is to provide a high-voltage device capable of reducing the size of the entire device by reducing the size of the outer box and reducing the manufacturing cost. is there.

[0010]

The high voltage device according to the present invention comprises:
A high-potential box, a high-voltage power supply that boosts the high-potential box to a predetermined high potential, and a low-potential outer box that houses the high-potential box and the high-voltage power supply; In order that the distance between the outer wall surface of the high-potential box and the inner wall surface of the outer box is substantially constant, it is installed at a substantially central position in the outer box. In addition, the following means are taken.

That is, the high-voltage power supply includes a power supply main body, and a movable movable base that supports the power supply main body at a predetermined angle with respect to the wall surfaces of the high-potential box and the outer box. Fixing means for fixing the movable gantry at a predetermined position.

[0012]

According to the above arrangement, the high-potential box which has been boosted to a predetermined high potential by the high-voltage power supply is accommodated in the low-potential outer box. The high-potential box is installed at a substantially central position in the outer box so that the distance between the outer wall surface of the high-potential box and the inner wall surface of the outer box is substantially constant in order to prevent corona discharge. ing.

The high-voltage power supply unit has a movable base that supports the power supply unit body at a predetermined angle with respect to the walls of the high-potential box and the outer box, and can move while maintaining the inclined state. The power supply device main body is mounted on and integrated with the movable gantry. As described above, since the power supply main body is inclined, the height of the long power supply main body from the floor surface can be kept low, and even in a narrow space between the outer box and the high-potential box, the height is high. The voltage power supply device can be easily moved to a predetermined installation location. And
By fixing the movable gantry by the fixing means, the power supply unit can be installed while maintaining the inclined state.

The distance between the outer edge of the high potential box and the inner edge of the outer box is 2 ^1/2 of the distance L between the outer wall of the high potential box and the inner wall of the outer box. In addition, the distance between the outer corner of the high-potential box and the inner corner of the outer box is ^31/2 times that of the opposing distance (interaction between the outer wall of the high-potential box and the inner wall of the outer box). When the distance L between them is constant). Normal,
In order to prevent discharge, the edges and corners of the high-potential box are formed into curved surfaces, so that the distance between the outer edge of the high-potential box and the inner edge of the outer box is the above distance. The distance between the opposing corners of the high-potential box and the inner corners of the high-potential box is not less than ^21/2 times L and not less than ^31/2 times the distance L.

Therefore, if the power supply unit is installed at an angle with respect to the walls of the high-potential box and the outer box as described above, the distance between the outer wall of the high-potential box and the inner wall of the outer box can be reduced. The power supply main body longer than the distance L can be installed in the outer box. In particular, the inclination angle of the power supply unit
And the power supply main body is installed between the outer corner of the high-potential box and the inner corner of the outer box, the longest power supply main body with respect to the distance L can be installed.

Therefore, if the power supply unit having the same length as the conventional one is used, the outer box can be made smaller than before, and if the outer box having the same size as the conventional one is used,
The power supply main unit having a longer length than the conventional power supply unit can be installed in the outer case.

[0017]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the present invention will be described below with reference to FIGS.

In this embodiment, the high voltage device of the present invention is applied to an ion implantation device. As shown in FIG. 2, the high-voltage device includes a high-potential box 1 containing an ion source, a mass spectrometer, and the like (not shown), and a Cockcroft and a high-potential box that boosts the high-potential box 1 to a predetermined high potential. A high-voltage power supply 2 of a Walton type; and an outer box 3 for shielding the X-rays, which houses the high-potential box 1 and the high-voltage power supply 2. Has air insulation. The high-voltage power supply 2 is not limited to the Cockcroft-Walton type.

A first-stage acceleration power supply for supplying a voltage for extracting an ion beam from the ion source is provided in the high-potential box 1.
The first-stage acceleration power supply is set to a higher potential than other parts in the high-potential box 1.

The ion beam extracted from the ion source in the high-potential box 1 and accelerated in the first stage is mass-analyzed by a mass analyzer in the high-potential box 1, and then is passed through the accelerating tube 5 to the outside of the outer box 3. Ground potential end station 6 provided
Is led to. When the ion beam accelerated in the first stage in the high-potential box 1 passes through the accelerating tube 5, the ion beam is further accelerated by the electric field generated by the potential difference between the high-potential high-potential box 1 and the ground potential end station 6 (post-stage acceleration). ) Is done. The ion beam having high energy due to the acceleration is irradiated on a beam irradiation target such as a semiconductor wafer set in the end station 6.

The high-potential box 1 is used to reduce the electric field between the high-potential box 1 and the outer box 3 at the ground potential to prevent the occurrence of corona discharge. A plurality of support insulators 4 are provided at a central position in the outer box 3 where the distance L between the support insulators is substantially equal.
It is installed in a state supported by ... In order to prevent corona discharge, the surfaces of the edge portion 1a and the corner portion 1b of the high-potential box 1 are formed as curved surfaces.

As shown in FIG. 3, the high-voltage power supply device 2 is configured such that the power supply device main body 7 and the power supply device main body 7 are inclined by about 45 ° with respect to the respective walls of the high-potential box 1 and the outer box 3. It comprises a movable trolley (movable gantry) 8 to be supported, and a fixed L bracket 11 as fixing means for fixing the trolley 8 to the floor surface 12.

The cart 8 is provided with ball casters 10... Capable of rotating the cart frame 9 so as to be rotatable 360 ° on all sides on the bottom of the cart frame 9 having a 45 ° inclined platform 9 a formed at one end. It is attached to. Then, the power supply main body 7 is placed on the 45 ° tilt table 9a.
Are fixed by fixing means such as bolts and nuts.

The cart 8 is provided with a 45 ° tilt base 9 so that the main body 7 can be stably supported.
a, the center of gravity G of the power supply main body 7 (more precisely, the power supply main body 7 And the center of gravity of the portion where the 45 ° tilt base 9a is combined)
Is configured to be located.

A procedure for installing the high-voltage power supply 2 in the outer case 3 in which the high-potential box 1 is installed in the above configuration will be described below.

As shown in FIG. 4, the door 3a of the outer box 3 is opened, the high-voltage power supply 2 is carried into the outer box 3 (arrow A), and the high-voltage power supply 2 is brought close to a predetermined power supply installation position. Is moved (arrow B). Next, the high-voltage power supply 2 is rotated on the spot (rotated by about 60 ° in the figure), and the orientation of the high-voltage power supply 2 is adjusted (arrow C). The state of the high-voltage power supply 2 at this time is shown by a solid line in FIG. 1 (for reference, the high-voltage power supply 2 shown by a solid line is used as a reference diagram).
The state when the power supply device main body 7 is rotated by 90 ° is shown by a dotted line in FIG. Next, the high-voltage power supply 2 and the high-potential box 1 are aligned (fine-tuned) so that the high-voltage power supply 2 is accurately positioned at the power supply installation position (the position indicated by the two-dot chain line in FIG. 1). Then, as shown in FIG. 3, the cart 8 is fixed to the floor surface 12 at that position by using a fixing L fitting 11 as fixing means. Thus, the installation of the high-voltage power supply device 2 is completed.

As described above, the power supply main body 7 is set at about 45 °
The power supply unit 7 is mounted on and integrated with a trolley 8 with a ball caster that can move while being tilted, so that the height of the long power supply unit 7 from the floor surface 12 is kept low. The high-voltage power supply 2 can be loaded, rotated, and installed even in a narrow space between the outer box 3 and the high-potential box 1.

By the way, the opposing distance L _a between the inner edge portion 3a of the outer edge portion 1a and the outer box 3 having a high potential box 1, between each other and the high potential box 1 of the outer wall surface and the inner wall surface of the outer box 3 For a distance L of

[0029]

(Equation 1)

The distance L between the outer corner 1b of the high-potential box 1 and the inner corner 3b of the outer box 3 is opposite to each other.
_b is

[0031]

(Equation 2)

## EQU1 ## Note that x in the above equation (1) is the distance between the edge 1a of the high potential box 1 and the edge when the surface is not formed into a curved surface, as in the following equation (3). expressed. Further, x 'in the above equation (2) is the distance between the corner 1b of the high potential box 1 and the corner when the surface is not formed into a curved surface, as in the following equation (4). Is represented by

X = A−R (3) x ′ = (3 ^1/2 / 2 ^1/2 ) A−R (4) In the above equations (3) and (4) R is the high potential box 1
Is the radius of the curved surface of the edge portion 1a and the corner portion 1b, and A is the distance between the edge portion and the center of the curved surface when the surface of the high potential box 1 is not formed on the curved surface.

Therefore, as described above, the power supply
Is inclined by about 45 °, the power supply body 7 longer than the distance L can be installed in the outer box 3.

In the above installation example, the power supply main body 7 of the high-voltage power supply 2 is installed between the outer edge 1a of the high-potential box 1 and the inner edge 3a of the outer box 3; If the power supply device main body 7 is installed between the outer corner portion 1b of the box 1 and the inner corner portion 3b of the outer box 3, the power supply device body 7 having a longer length can be installed.

As described above, the high-voltage device of this embodiment is
A high-potential box 1 accommodating an ion source and the like; a high-voltage power supply 2 for boosting the high-potential box 1 to a predetermined high potential in order to accelerate the ion beam by an electric field; A low-potential outer box 3 accommodating the device 2, wherein the high-potential box 1 is arranged such that a distance L between an outer wall surface of the high-potential box 1 and an inner wall surface of the outer box 3 is substantially constant. The high-voltage power supply 2 is provided at a substantially central position in the outer box 3. The high-voltage power supply 2 is connected to the power supply main body 7 by the high-potential box 1 and the outer box 3. A movable cart 8 that is supported by being inclined at about 45 ° with respect to each wall;
Fixed L bracket 11 as fixing means for fixing the cart 8
This is a configuration including:

Thus, the outer wall surface of the high potential box 1 and the outer box 3
Since the power supply device main body 7 having a length longer than the distance L between the inner wall surfaces of the power supply device can be installed in the outer box 3, if the power supply device main body 7 having the same length as the conventional one is used, Also, the outer box 3 can be downsized. In other words, if the outer case 3 having the same size as the conventional case is used, the power supply unit 7 having a longer length than the conventional case can be installed in the outer case 3. Restrictions have been relaxed,
The degree of freedom at the time of design is increased, and a sufficient insulation distance can be designed.

Since the size of the outer box 3 can be reduced as described above, it is possible to economically reduce the size of the entire ion implantation apparatus, and thus to reduce the manufacturing cost of the ion implantation apparatus. it can.

In the above embodiment, the power supply unit 7 is supported on the carriage 8 in a state of being inclined at about 45 ° with respect to the floor surface 12, but the inclination angle of the power supply unit 7 is not limited to this. Instead, the optimum angle may be selected in terms of the mechanism design. For example, the inclination angle may be about 60 ° with respect to the floor surface 12 (about 30 ° with respect to the vertical wall surface).

In the above embodiment, an example in which the present invention is applied to an ion implantation apparatus has been described. However, the invention can be applied to other apparatuses. The embodiments described above are merely for clarifying the technical contents of the present invention, and should not be construed as being limited to such specific examples in a narrow sense. The present invention can be implemented with various modifications within the scope of the above.

[0041]

[Effect of the invention] The high-voltage device of the invention is, as described above,
A high-voltage power supply, a power supply main body, a movable movable base for supporting the power supply main body at a predetermined angle with respect to each wall surface of the high-potential box and the outer box, and And a fixing means for fixing with the above.

Therefore, since the power supply main body is inclined, the height of the long power supply main body from the floor surface can be kept low, even in a narrow space between the outer box and the high-potential box. The high-voltage power supply can be easily moved to a predetermined installation place, and the power supply main body can be easily moved to the predetermined installation place while the outer edge of the high-potential box is opposed to the inner edge of the outer box. It can be installed in the space between the outer corners of the high potential box and the inner corners of the outer box. Therefore, the power supply main body longer than the distance between the outer wall surface of the high-potential box and the inner wall surface of the outer box can be installed in the outer box, and the power supply main body having the same length as the conventional one can be installed. If used, the outer box can be made smaller than before, and if an outer box of the same size as the conventional one is used, a power supply unit longer than the conventional one is installed in the outer box. can do. As described above, since the outer box can be reduced in size, it is possible to reduce the size of the entire device, and thus to achieve effects such as a reduction in the manufacturing cost of the device.

[Brief description of the drawings]

FIG. 1 is a schematic side elevational view showing an embodiment of the present invention, showing a state when a high-voltage power supply of a high-voltage device is installed.

FIG. 2 is a schematic configuration diagram of an ion implantation apparatus to which the high voltage device is applied.

FIG. 3 is a schematic side view of the high-voltage power supply device, and a view of the high-voltage power supply device viewed from a longitudinal direction of the power supply device main body.

FIG. 4 is a schematic main part plan view showing a state when the high-voltage power supply device is installed.

FIG. 5 shows a conventional example, and is a schematic configuration diagram of an ion implantation apparatus to which a high-voltage device is applied.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 High-potential box 2 High-voltage power supply 3 Outer case 4 Support insulator 7 Power supply main body 8 Dolly 9 45-degree inclined base 10 Ball caster 11 Fixed L bracket (fixing means)

Claims (1)

(57) [Scope of request for utility model registration] 1. A high-potential box, a high-voltage power supply unit for boosting the high-potential box to a predetermined high potential, and a low-potential outer box containing the high-potential box and the high-voltage power supply unit, The high-potential box is a high-voltage device installed at a substantially central position in the outer box so that the distance between the outer wall surface of the high-potential box and the inner wall surface of the outer box is substantially constant. The voltage power supply device includes a power supply main body, a movable movable base that supports the power supply main body at a predetermined angle with respect to each wall of the high-potential box and the outer box, and the movable mount at a predetermined position. A high-voltage device comprising: fixing means for fixing.