JP2574818B2 - Vacuum suction fixing table and vacuum suction fixing method - Google Patents
Vacuum suction fixing table and vacuum suction fixing methodInfo
- Publication number
- JP2574818B2 JP2574818B2 JP62287335A JP28733587A JP2574818B2 JP 2574818 B2 JP2574818 B2 JP 2574818B2 JP 62287335 A JP62287335 A JP 62287335A JP 28733587 A JP28733587 A JP 28733587A JP 2574818 B2 JP2574818 B2 JP 2574818B2
- Authority
- JP
- Japan
- Prior art keywords
- vacuum suction
- outer peripheral
- peripheral portion
- wafer
- suction fixing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- Jigs For Machine Tools (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は薄板を固定する技術に係り、特に薄板を平坦
に固定するのに好適な真空吸着固定台および真空吸着固
定方法に関する。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a technique for fixing a thin plate, and particularly to a vacuum suction fixing base and a vacuum suction fixing method suitable for fixing a thin plate flat.
従来の装置は特公昭60−15147に示されるように円筒
状のピンを容器の中に組立てる構造となっていた。The conventional device has a structure in which a cylindrical pin is assembled in a container as shown in JP-B-60-15147.
また、特開昭60−99538号広報には、一体の結晶物質
から構成され、ピークの先端が同一平面上にある真空チ
ャックについて開示されている。In addition, Japanese Patent Application Laid-Open No. 60-99538 discloses a vacuum chuck composed of an integral crystalline substance and having peaks on the same plane.
しかし、真空吸着固定台の複数の領域を独立に排気可
能に構成すること、または、真空吸着固定台の表面に窒
化膜を形成することについては開示がない。However, there is no disclosure about a configuration in which a plurality of regions of the vacuum suction fixing table can be independently evacuated or a method of forming a nitride film on the surface of the vacuum suction fixing table.
上記従来技術は、複数個の突起の形成を組立て構造と
しているため、その配列間隔を狭めることが難しく、突
起と突起の間のウエーハが大気圧によって変形すること
に対する配慮がされておらず平坦度を高精度に保つ点で
問題があった。また、従来技術では、突起を包含してい
る外周部が一つのリム構造であるため、外部から漏れて
侵入する大気の影響について配慮されていないため、ウ
エーハ外周部の吸引力が弱くなって、吸引固定時にウエ
ーハ周辺の平坦度が低下する問題があった。In the above prior art, since the formation of a plurality of protrusions is an assembly structure, it is difficult to narrow the arrangement interval, and no consideration is given to deformation of the wafer between the protrusions due to atmospheric pressure, and the flatness is not considered. There is a problem in keeping the precision of Further, in the prior art, since the outer peripheral portion including the protrusion has a single rim structure, the influence of the air leaking from the outside and entering is not taken into consideration, so the suction force of the outer peripheral portion of the wafer is weakened, There was a problem that the flatness around the wafer was reduced during suction fixing.
本発明の目的は、多数の突起を用いて薄膜を支持する
際の大気圧による変形と、薄板を吸引固定する際のウエ
ーハ外周の平坦度を良好にすることにある。An object of the present invention is to improve the deformation due to atmospheric pressure when a thin film is supported by using a large number of projections and to improve the flatness of the outer periphery of a wafer when a thin plate is fixed by suction.
上記目的は、複数の突起を有する中心部と、溝を有す
る外周部とを備えた真空吸着固定台において、前記突起
の配列ピッチは2mm以下で、かつ、前記中心部と前記外
周部とはそれぞれ真空排気可能に構成されていることを
特徴とする真空吸着固定台、また載置された基板を真空
吸着固定する際、前記基板の表面が±0.5μｍ以下の平
坦度となるように複数の突起を有する中心部と溝を有す
る外周部とを備えた真空吸着固定台上に基板を載置する
工程と、前記中心部と前記外周部とを真空排気し、前記
真空吸着固定台に前記基板を固定する工程とを有するこ
とを特徴とする真空吸着固定方法により達成される。The object is to provide a vacuum suction fixing table having a central portion having a plurality of protrusions and an outer peripheral portion having a groove, wherein the arrangement pitch of the protrusions is 2 mm or less, and the central portion and the outer peripheral portion are respectively A vacuum suction fixing table characterized by being configured to be capable of evacuating, and a plurality of projections such that the surface of the substrate has a flatness of ± 0.5 μm or less when the mounted substrate is fixed by vacuum suction. Placing the substrate on a vacuum suction fixture having a central portion having a central portion and an outer peripheral portion having a groove, and evacuating the central portion and the outer peripheral portion, and placing the substrate on the vacuum suction fixture. And a fixing step.
突起部を一つの母材から切削等により形成することに
より突起部の間隔を小さくできるので、薄いウエーハが
大気圧で押されてたわみ、変形することを防止できる。
また、突起部の間隔が小さくなるため流量抵抗が増し、
ウエーハ外周部からの大気浸入の影響をウエーハ裏面の
負圧空間の中央の領域まで伝搬することを防ぐことがで
きる。従って、該負圧空間の外周部近傍に吸収孔を設け
て、中央の吸収孔よりも排気速度を大きくすることによ
り、大気浸入による吸引力の低下を容易に防止可能とな
る。さらに外周部に連続した溝を設け、上述の負圧空間
とは独立に排気することにより、ウエーハ周辺からの大
気の侵入の影響を完全に除去することができる。従っ
て、ウエーハの平坦度を極めて高精度に保持した状態で
吸引固定することが可能となる。By forming the protrusions from one base material by cutting or the like, the distance between the protrusions can be reduced, so that the thin wafer can be prevented from being bent and deformed by being pressed at atmospheric pressure.
Also, the flow resistance increases because the interval between the protrusions becomes smaller,
It is possible to prevent the influence of atmospheric intrusion from the outer peripheral portion of the wafer from propagating to the central region of the negative pressure space on the back surface of the wafer. Therefore, by providing an absorption hole near the outer peripheral portion of the negative pressure space and making the exhaust speed higher than that of the central absorption hole, it is possible to easily prevent a decrease in suction force due to intrusion into the atmosphere. Further, by providing a continuous groove in the outer peripheral portion and evacuating independently of the above-mentioned negative pressure space, the influence of the intrusion of the atmosphere from around the wafer can be completely removed. Therefore, the wafer can be fixed by suction while maintaining the flatness of the wafer with extremely high precision.
以下、本発明の一実施例を第１図ににより説明する。
ａは本発明吸着台の平面図、ｂは側面図、ｃは突起部と
吸引孔との拡大平面図、ｄは突起部と吸引孔の断面図、
ｅは外周部の断面図であり、各々共通な部位には同一番
号を付してある。Hereinafter, one embodiment of the present invention will be described with reference to FIG.
a is a plan view of the suction table of the present invention, b is a side view, c is an enlarged plan view of the protrusion and the suction hole, d is a cross-sectional view of the protrusion and the suction hole,
"e" is a cross-sectional view of the outer peripheral portion, and common portions are denoted by the same reference numerals.
吸着台４には、外周部２に包含された領域に複数個の
突起部１がある。突起部１はc,d図に示すように、縦、
横のピッチが2mmで断面の交差角度が90゜をなす四角錘
状の形状である。突起部の先端の面積は0.0025mm2〜0.0
1mm2である。複数の突起部のある領域の中央に吸引孔５
があり、外周部近傍に８個の吸引力がある。The suction table 4 has a plurality of protrusions 1 in a region included in the outer peripheral portion 2. The projection 1 is vertical, as shown in FIGS.
It has a quadrangular pyramid shape with a horizontal pitch of 2 mm and a crossing angle of 90 ° in cross section. The area of the tip of the protrusion is 0.0025 mm 2 to 0.0
A 1mm 2. A suction hole 5 is provided at the center of the region having a plurality of protrusions.
And there are eight suction forces near the outer periphery.
吸収孔５は絞り弁10を介して、また吸引孔７は、絞り
弁12を介して図示していない排気系に接続している。外
周部２は吸引固定するウエーハの輪郭に沿った平面形状
をしている。さらに、外周部２は溝部20を有し吸引孔６
と絞り弁９を介して図示していない排気系に接続してい
る。外周部２は断面図ｅに示してあるように、その幅は
3mmで、中央に幅1.5mm深さ2mmの溝20が形成されてい
る。The absorption hole 5 is connected via a throttle valve 10 and the suction hole 7 is connected via a throttle valve 12 to an exhaust system (not shown). The outer peripheral portion 2 has a planar shape along the contour of the wafer to be fixed by suction. Further, the outer peripheral portion 2 has a groove 20 and a suction hole 6.
And an exhaust system (not shown) via a throttle valve 9. As shown in the sectional view e, the outer peripheral portion 2 has a width of
A groove 20 having a width of 1.5 mm and a depth of 2 mm is formed in the center at 3 mm.
なお、吸引孔5,7の拡大図をc,dに示してあるが、その
形状はいずれも等しく、孔21の形状であり、その直径は
1mmである。また突起部１と外周部２とは図b,eに示す通
り同一の平面となるように平坦に加工されている。In addition, although the enlarged views of the suction holes 5 and 7 are shown in c and d, the shapes are all the same, the shape of the hole 21 and the diameter thereof is
1 mm. The projection 1 and the outer peripheral portion 2 are flattened so as to be on the same plane as shown in FIGS.
絞り弁9,10,12はウエーハの裏面を吸引固定する際の
排気速度を変え、外周部に近い所程吸引力を大きくする
ように吸引圧分布を生じている。絞り弁の流量抵抗は絞
り弁9,12,10の順で大きくなるように設定してある。従
って、人気の侵入洩れの大きいウエーハ外周部の吸引力
が損なわれなくなる。The throttle valves 9, 10, and 12 change the exhaust speed at the time of suction-fixing the back surface of the wafer, and generate a suction pressure distribution so as to increase the suction force closer to the outer peripheral portion. The flow resistance of the throttle valve is set to increase in the order of the throttle valves 9, 12, and 10. Therefore, the suction force on the outer peripheral portion of the popular invasion and leakage wafer is not impaired.
第２図は、周辺部に溝部のない従来の吸着台で４イン
チウエーハを吸引固定した場合のウエーハ表面の直径上
を片側の周辺部を含む領域の平坦度を３次元測定機で測
定した一例である。図中のスケールＷは吸着台から外側
の部分でウエーハの平坦度が急激に悪化している領域を
示しており、この例では約8mmに及んでいる。Ｗの領域
を除いた内側では、平坦度が±0.5μｍであるのに、Ｗ
の領域を含めると５μｍ以上に悪化している。FIG. 2 shows an example in which the flatness of a region including the peripheral portion on one side is measured by a three-dimensional measuring machine on the diameter of the wafer surface when a 4-inch wafer is suction-fixed by a conventional suction table having no groove in the peripheral portion. It is. The scale W in the figure indicates a region where the flatness of the wafer is rapidly deteriorating in a portion outside the adsorption table, and in this example, it is about 8 mm. On the inside excluding the region of W, the flatness is ± 0.5 μm,
Including the region of, it has deteriorated to 5 μm or more.
第３図は本発明による外周部に溝を設けた吸着台を用
いて４インチウエーハを吸引固定した場合の前図と同じ
位置のウエーハ表面の平坦度の測定結果である。外周部
におけるウエーハ表面の平坦度の悪化は認められず、ウ
エーハ全面で±0.5μｍの平坦度が得られている。FIG. 3 shows the measurement results of the flatness of the surface of the wafer at the same position as in the previous figure when a 4-inch wafer is suction-fixed using the suction table provided with a groove in the outer peripheral portion according to the present invention. No deterioration in the flatness of the wafer surface in the outer peripheral portion was observed, and a flatness of ± 0.5 μm was obtained over the entire surface of the wafer.
本発明の別の実施例の平面図を第４図に示す。吸着台
40は、前述の発明例と同一形状の四角錘状の突起部41と
それを包含する外周部42から構成される。外周部42には
溝が形成され吸引孔と絞り弁44を経て図示していない排
気系に接続している。複数の突起部の配列から成る領域
は絞り弁43を経て図示していない排気系に接続してい
る。なお本例の吸着台は、ウエーハのオリエンテーショ
ンフラットを用いてウエーハの位置決めを行うための回
転支持部45,46,47,48を有している。図示していない給
気系に接続した駆動ピストンによって、支持部48を開閉
させて、吸着台上でウエーハを機械的に位置決めするこ
とができる。A plan view of another embodiment of the present invention is shown in FIG. Suction table
Reference numeral 40 denotes a quadrangular pyramid-shaped projection 41 having the same shape as that of the above-described invention, and an outer peripheral portion 42 including the same. A groove is formed in the outer peripheral portion 42 and is connected to an exhaust system (not shown) via a suction hole and a throttle valve 44. A region composed of an array of a plurality of projections is connected to an exhaust system (not shown) via a throttle valve 43. Note that the suction table of this example has rotation support portions 45, 46, 47, and 48 for positioning the wafer using the wafer orientation flat. The support portion 48 can be opened and closed by a drive piston connected to an air supply system (not shown) to mechanically position the wafer on the adsorption table.
なお、吸着台の逃げ部49は、図示していないウエーハ
裏面吸引搬送アームの挿入を可能とする領域である。The escape portion 49 of the suction table is an area where a wafer back side suction transfer arm (not shown) can be inserted.
以上述べた発明の吸着台の材質は耐摩耗性の良いアル
ミ合金A7075（日立製作所製AHS）を用いた。しかし材質
としては、吸着固定するウエーハと熱膨張率が近いもの
が好ましく、他の材質を用いることも可能である。例え
ば、シリコンウエーハ用の吸着台としてはシリコン単結
晶を用いて作製することが望ましい。シリコン単結晶製
の吸着台の作り方としては、異方性エッチングを用いて
四角錘状の突起を作り、外周部は等方性エッチングを用
いて形成することが可能である。これらのエッチング技
術は半導体プロセス分野で公知である。もちろん機械加
工も可能である。加工後の突起部と外周部に窒化膜形成
処理を行うとウエーハ裏面よりも硬度が高くなり耐摩耗
性が向上する。As the material of the suction table of the invention described above, aluminum alloy A7075 (AHS manufactured by Hitachi, Ltd.) having good wear resistance was used. However, as the material, a material having a coefficient of thermal expansion close to that of the wafer to be fixed by adsorption is preferable, and other materials can be used. For example, it is desirable that the adsorption table for a silicon wafer be manufactured using a silicon single crystal. As a method of making the adsorption table made of silicon single crystal, it is possible to form a quadrangular pyramid-shaped projection using anisotropic etching, and to form the outer peripheral portion using isotropic etching. These etching techniques are known in the semiconductor processing field. Of course, machining is also possible. When a nitride film is formed on the projection and the outer periphery after the processing, the hardness becomes higher than that of the rear surface of the wafer, and the wear resistance is improved.
次に複数の突起部分の配列ピッチについて述べる。突
起部や外周部の先端で支持されて真空吸引されるウエー
ハ面には大気圧が負荷され、支持の存在しない所がたわ
み変形する。ウエーハの変形量は、分布荷重の加わる両
端支持梁として近似計算することができる。幅をｂ、厚
さをｈ、長さをｌ、縦弾性係数をＥ、断面二次モーメン
トを 等分布荷重をｗとするとこの梁の最大たわみ量δは となる。今幅ｂを突起部のピッチと仮定し、長さｌを正
方配列の場合の対角長√２・ｂとし、大気圧0.01kg/mm2
（100KPa）が単位幅ｂに加わるもととすると、ｗは0.01
×ｂとなり式（１）は さらに４インチシリコンウエーハの場合Ｅ＝２×104kg/
mm、ｈ＝0.4mmとすと、式（２）は δ＝５×10-6・b4 ……（３） 従ってδ≦0.001mmとするには より、4mm以下のピッチが望ましくなる。シリコンウエ
ーハの裏面は、ポリッシング後加工変質層を除去するた
めエッチング処理が施されているため、微少な凹部が多
く、突起部の先端部の面積を0.0025mm2〜0.01mm2とした
場合でも、全ての突起部の先端がウエーハ裏面に接触す
るのは困難と考えられるため、実際の突起部の配列ピッ
チは余裕を見込んで2mm以下が望ましい。なお、この配
列ピッチの距離は、ウエーハの材質や厚さやたゆみ量の
許容値により当然変わるが、パターンの微細化の進む、
半導体分野においては、ウエーハのたわみ量が現在より
一桁小さくなることが要求されており、そのためにも、
突起部のピッチは2mm以下にすることが必要である。Next, the arrangement pitch of the plurality of protrusions will be described. Atmospheric pressure is applied to the wafer surface that is supported by the protrusions and the distal end of the outer peripheral portion and suctioned by vacuum, and a portion where there is no support is bent and deformed. The amount of deformation of the wafer can be approximately calculated as a beam supported at both ends to which a distributed load is applied. The width is b, the thickness is h, the length is l, the longitudinal elastic modulus is E, and the second moment of area is When the uniformly distributed load is w, the maximum deflection δ of this beam is Becomes Now, assuming that the width b is the pitch of the protrusions, the length 1 is a diagonal length in the case of a square arrangement√2 · b, and the atmospheric pressure is 0.01 kg / mm 2.
If (100KPa) is added to the unit width b, w is 0.01
× b and equation (1) becomes Furthermore, in the case of a 4-inch silicon wafer, E = 2 × 10 4 kg /
Assuming that mm and h = 0.4 mm, the equation (2) becomes δ = 5 × 10 −6 · b 4 (3) Therefore, to make δ ≦ 0.001 mm Thus, a pitch of 4 mm or less is desirable. The back surface of the silicon wafer, the etching process for removing the polishing after the damaged layer is applied, many minute recess, the area of the tip portion of the protrusion even when a 0.0025mm 2 ~0.01mm 2, Since it is considered that it is difficult for the tips of all the projections to come into contact with the back surface of the wafer, the actual arrangement pitch of the projections is desirably 2 mm or less in consideration of a margin. The distance of the arrangement pitch naturally changes depending on the allowable value of the material, thickness, and amount of deflection of the wafer.
In the semiconductor field, it is required that the amount of deflection of a wafer is reduced by an order of magnitude from the current level.
It is necessary that the pitch of the projections be 2 mm or less.
（（４）式においてδ≦0.0001mmとするにはｂ≦2mmと
なる） 〔発明の効果〕 本発明によれば、ウエーハを±0.5μｍ以下の平坦度
で吸引固定でき、しかも突起状の支持点で支るため、塵
埃等の介在による平坦度の悪化も防止できるので、微細
パターン形成を必要とする半導体プロセスの試料台に適
用する上で効果がある。(In order to satisfy δ ≦ 0.0001 mm in the formula (4), b ≦ 2 mm) [Effects of the Invention] According to the present invention, the wafer can be suction-fixed with a flatness of ± 0.5 μm or less, and furthermore, a projection-like support is provided. Since it is possible to prevent the deterioration of the flatness due to the interposition of dust and the like, it is effective when applied to a sample stage of a semiconductor process which requires formation of a fine pattern.
第１図は本発明の実施例の図で、その（ａ）は平面図、
（ｂ）は側面図、（ｃ）は突起部の平面拡大図、（ｄ）
及び（ｅ）は拡大断面図、第２図は従来例による測定デ
ータを示す図、第３図は本発明による測定データを示す
図、第４図は第２の実施例の平面図である。 １…突起部、２…外周部、４…吸着台、５…吸引孔、６
…吸引孔、20…溝部。FIG. 1 is a view of an embodiment of the present invention, in which (a) is a plan view,
(B) is a side view, (c) is an enlarged plan view of a projection, (d)
2 (e) is an enlarged sectional view, FIG. 2 is a view showing measurement data according to a conventional example, FIG. 3 is a view showing measurement data according to the present invention, and FIG. 4 is a plan view of the second embodiment. DESCRIPTION OF SYMBOLS 1 ... Projection part, 2 ... Peripheral part, 4 ... Suction table, 5 ... Suction hole, 6
... suction holes, 20 ... grooves.
フロントページの続き (72)発明者 黒崎 利栄 東京都国分寺市東恋ケ窪１丁目280番地 株式会社日立製作所中央研究所内 (72)発明者 佐藤 一雄 東京都国分寺市東恋ケ窪１丁目280番地 株式会社日立製作所中央研究所内 (72)発明者 田中 伸司 東京都国分寺市東恋ケ窪１丁目280番地 株式会社日立製作所中央研究所内 (56)参考文献 特開 昭62−221130（ＪＰ，Ａ)Continuing on the front page (72) Inventor Toshie Kurosaki 1-280 Higashi-Koikekubo, Kokubunji-shi, Tokyo Inside the Hitachi, Ltd. Central Research Laboratory (72) Inventor Kazuo Sato 1-280 Higashi-Koikekubo, Kokubunji-shi, Tokyo Inside the Hitachi, Ltd. Central Research Laboratory (72) Inventor Shinji Tanaka 1-280 Higashi Koikebo, Kokubunji-shi, Tokyo Inside the Central Research Laboratory, Hitachi, Ltd. (56) References JP-A-62-221130 (JP, A)
Claims (6)
外周部とを備えた真空吸着固定台において、前記突起の
配列ピッチは2mm以下で、かつ、前記中心部と前記外周
部とはそれぞれ真空排気可能に構成されていることを特
徴とする真空吸着固定台。1. A vacuum suction fixing table having a central portion having a plurality of projections and an outer peripheral portion having a groove, wherein the arrangement pitch of the projections is 2 mm or less, and the central portion and the outer peripheral portion are A vacuum suction fixing table characterized by being configured to be able to evacuate.
に窒化膜が形成されていることを特徴とする真空吸着固
定台。2. A vacuum suction fixing base having a plurality of projections, wherein a nitride film is formed on the surface of the projections.
記基板の表面が±0.5μｍ以下の平坦度となるように複
数の突起を有する中心部と溝を有する外周部とを備えた
真空吸着固定台上に基板を載置する工程と、 前記中心部と前記外周部とを真空排気し、前記真空吸着
固定台に前記基板を固定する工程とを有することを特徴
とする真空吸着固定方法。3. The method according to claim 1, further comprising, when vacuum-fixing the mounted substrate, a central portion having a plurality of protrusions and an outer peripheral portion having a groove so that the surface of the substrate has a flatness of ± 0.5 μm or less. A step of mounting a substrate on a vacuum suction fixing table; and a step of evacuating the central portion and the outer peripheral portion to fix the substrate to the vacuum suction fixing table. Method.
大きくすることを特徴とする特許請求の範囲第３項記載
の真空吸着固定方法。4. The vacuum suction fixing method according to claim 3, wherein the pumping speed of the outer peripheral portion is set higher than that of the central portion.
よりも硬度が高いことを特徴とする特許請求の範囲第３
項又は第４項記載の真空吸着固定方法。5. The method according to claim 3, wherein a surface of the plurality of protrusions has a higher hardness than a back surface of the substrate.
Item 5. The vacuum suction fixing method according to Item 4 or 4.
に窒化膜が形成されている真空吸着固定台上に基板を載
置する工程と、 真空排気し、前記真空吸着固定台に前記基板を固定する
工程とを有することを特徴とする真空吸着固定方法。6. A step of mounting a substrate on a vacuum suction fixing base having a plurality of projections and having a nitride film formed on the surface of the projections; And fixing the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62287335A JP2574818B2 (en) | 1987-11-16 | 1987-11-16 | Vacuum suction fixing table and vacuum suction fixing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62287335A JP2574818B2 (en) | 1987-11-16 | 1987-11-16 | Vacuum suction fixing table and vacuum suction fixing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01129438A JPH01129438A (en) | 1989-05-22 |
| JP2574818B2 true JP2574818B2 (en) | 1997-01-22 |
Family
ID=17716034
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62287335A Expired - Fee Related JP2574818B2 (en) | 1987-11-16 | 1987-11-16 | Vacuum suction fixing table and vacuum suction fixing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2574818B2 (en) |
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| SG96605A1 (en) * | 2000-03-13 | 2003-06-16 | Nikon Corp | Substrate holding apparatus and exposure apparatus including substrate holding apparatus |
| US6762826B2 (en) | 1999-08-19 | 2004-07-13 | Canon Kabushiki Kaisha | Substrate attracting and holding system for use in exposure apparatus |
| KR100841381B1 (en) * | 2007-02-01 | 2008-06-26 | 미쓰비시덴키 가부시키가이샤 | Semiconductor manufacturing apparatus |
| US7425238B2 (en) | 2002-10-16 | 2008-09-16 | Canon Kabushiki Kaisha | Substrate holding device |
| US8696816B2 (en) | 2005-01-11 | 2014-04-15 | Mitsubishi Electric Corporation | Semiconductor manufacturing apparatus |
| US9233455B2 (en) | 2010-12-02 | 2016-01-12 | Fuji Electric Co., Ltd. | Chucking device and chucking method |
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|---|---|---|---|---|
| US5643366A (en) * | 1994-01-31 | 1997-07-01 | Applied Materials, Inc. | Wafer handling within a vacuum chamber using vacuum |
| JPH10242255A (en) * | 1997-02-28 | 1998-09-11 | Kyocera Corp | Vacuum chuck device |
| JP2003158173A (en) * | 2001-11-20 | 2003-05-30 | Oki Electric Ind Co Ltd | Wafer holder |
| WO2008155860A1 (en) * | 2007-06-21 | 2008-12-24 | Hitachi Plasma Display Limited | Die coater and process for producing substrate structure for plasma display panel |
| JP6201400B2 (en) * | 2013-04-25 | 2017-09-27 | 富士電機株式会社 | Suction plate for semiconductor wafer process |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5689744A (en) * | 1979-12-24 | 1981-07-21 | Fujitsu Ltd | X-ray transfer device |
| US4551192A (en) * | 1983-06-30 | 1985-11-05 | International Business Machines Corporation | Electrostatic or vacuum pinchuck formed with microcircuit lithography |
| JPS62221130A (en) * | 1986-03-24 | 1987-09-29 | Toshiba Corp | Vacuum chuck apparatus |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6762826B2 (en) | 1999-08-19 | 2004-07-13 | Canon Kabushiki Kaisha | Substrate attracting and holding system for use in exposure apparatus |
| US6809802B1 (en) | 1999-08-19 | 2004-10-26 | Canon Kabushiki Kaisha | Substrate attracting and holding system for use in exposure apparatus |
| SG96605A1 (en) * | 2000-03-13 | 2003-06-16 | Nikon Corp | Substrate holding apparatus and exposure apparatus including substrate holding apparatus |
| US6710857B2 (en) | 2000-03-13 | 2004-03-23 | Nikon Corporation | Substrate holding apparatus and exposure apparatus including substrate holding apparatus |
| US7425238B2 (en) | 2002-10-16 | 2008-09-16 | Canon Kabushiki Kaisha | Substrate holding device |
| US8696816B2 (en) | 2005-01-11 | 2014-04-15 | Mitsubishi Electric Corporation | Semiconductor manufacturing apparatus |
| KR100841381B1 (en) * | 2007-02-01 | 2008-06-26 | 미쓰비시덴키 가부시키가이샤 | Semiconductor manufacturing apparatus |
| US9233455B2 (en) | 2010-12-02 | 2016-01-12 | Fuji Electric Co., Ltd. | Chucking device and chucking method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01129438A (en) | 1989-05-22 |
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| LAPS | Cancellation because of no payment of annual fees |