JP2024130136A - Transfer method and transfer device - Google Patents

Abstract

[Problem] To provide a transfer method and transfer device capable of preventing misalignment of an element after it has been transferred onto a transfer substrate by blistering. [Solution] This transfer method transfers an element 21 held on a transfer substrate 22 to a transfer substrate 23, and includes a transfer preparation step of bringing the element 21 held on the transfer substrate 22 and the transfer substrate 23 into opposition, a transfer step of holding the predetermined element 21 on the transfer substrate 23 by generating blisters 30 on the transfer substrate 22 in or near the holding region of the predetermined element 21 in an environment where the pressure around the predetermined element 21 is a first pressure, and a blister contraction step of changing the pressure around the predetermined element 21 to a second pressure higher than the first pressure and contracting the blister 30. [Selected Figure] Figure 4

Description

The present invention relates to a transfer method in which a transfer substrate is irradiated with light energy and an element is transferred to a transfer substrate by using blistering.

In recent years, semiconductor chips have been miniaturized to reduce costs, and efforts are being made to mount these miniaturized semiconductor chips with high precision. To mount these miniaturized chips at high speed, a method known as laser lift-off is used in which a laser is irradiated onto the bonding surface of the chip bonded to the transfer substrate to cause ablation, and the chip is peeled off from the transfer substrate and transferred to the transfer substrate by biasing it.

Patent Document 1 discloses a technology for ablating a blistering layer provided on a transfer substrate by irradiating the blistering layer, which has an adhesive layer on its surface side, with a laser beam. In the blistering layer, blisters (bulges) are generated by ablation, and the generation of these blisters pushes out an object (element) that was adhered to the adhesive layer, thereby separating the object from the transfer substrate.

Special Publication No. 2014-515883

However, in the element transfer method shown in Patent Document 1, there was a risk of the element transferred to the transfer substrate being misaligned. Specifically, when the blistering layer 124 of the transfer substrate 122 is irradiated with laser light 111 to generate blisters 130 and transfer the element 121 to the transfer substrate 123 as shown in FIG. 7(a), depending on the size of the blister 130, the blistering layer 124 may continue to adhere to the element 121 until the blister 130 shrinks even after the entire element 121 is transferred to the catch layer 125 on the transfer substrate 123 as shown in FIG. 7(b). Here, if the adhesive strength of the catch layer 125 is not sufficiently greater than the adhesive strength of the blistering layer 124, for example, when the transfer substrate 122 and the transfer substrate 123 are moved relative to each other to change the arrangement interval of the elements, the element 121 may be pulled by the blistering layer 124 still adhering to the element 121 as shown in FIG. 7(c), causing a problem of misalignment.

In consideration of the above problems, the present invention aims to provide a transfer method and transfer device that can prevent elements from being misaligned after being transferred onto a transfer substrate due to blistering.

In order to solve the above problems, the transfer method of the present invention is a transfer method for transferring an element held on a transfer substrate to a transferee substrate, and is characterized by having a transfer preparation step of opposing the element held on the transfer substrate to the transferee substrate, a transfer step of holding the specified element on the transferee substrate by generating blisters on the transfer substrate in or near the holding area of the specified element in an environment where the pressure around the specified element is a first pressure, and a blister contraction step of changing the pressure around the specified element to a second pressure higher than the first pressure and contracting the blister.

The transfer method of the present invention includes a blister shrinkage process, which makes it possible to forcibly shrink the blisters used to transfer the element to the transfer substrate and separate them from the element, thereby preventing the element from being misaligned due to the blisters.

The method may further include an arrangement direction movement step of relatively moving the transfer substrate and the transferred substrate in the arrangement direction of the elements on the transfer substrate after the blister has been contracted.

This makes it possible to prevent the blisters from adhering to the elements when the alignment direction movement step is performed, thereby preventing the elements from being pulled by the blisters and becoming displaced during the alignment direction movement step.

Here, the first pressure may be lower than atmospheric pressure, and the second pressure may be atmospheric pressure.

On the other hand, it is preferable that the first pressure is atmospheric pressure and the second pressure is higher than atmospheric pressure.

In order to solve the above problem, the transfer device of the present invention is a transfer device that transfers an element held on a transfer substrate to a transferee substrate by irradiating the transfer substrate with active energy rays, and includes an energy irradiation unit that irradiates the transfer substrate with active energy rays to generate blisters in a holding area of a specific element on the transfer substrate or in the vicinity thereof, and a pressure adjustment unit that adjusts at least the pressure around the element held on the transfer substrate, and the pressure adjustment unit is characterized in that, compared to a first pressure, which is the pressure around the specific element when the energy irradiation unit generates the blister on the transfer substrate, the pressure adjustment unit changes the pressure around the specific element when the specific element is held on the transferee substrate to a second pressure higher than the first pressure, thereby shrinking the blister.

According to the transfer device of the present invention, by changing the pressure around a specific element from a first pressure to a second pressure using the pressure adjustment unit, the blisters used to transfer the element to the transfer substrate can be forcibly deflated and separated from the element, thereby preventing the element from being misaligned due to the blisters.

The device may further include a transfer substrate gripping portion that grips the transfer substrate and a transferred substrate gripping portion that grips the transferred substrate, the transfer substrate gripping portion having a side wall portion that surrounds the gripping area of the transfer substrate and extends to the transferred substrate gripping portion, and the side wall portion abuts against the transferred substrate gripping portion to form an enclosed space that surrounds the gripping area of the transfer substrate and the gripping area of the transferred substrate, and the pressure adjustment portion adjusts the pressure in the enclosed space.

On the other hand, the device may further include a transfer substrate gripping portion that grips the transfer substrate and a transferred substrate gripping portion that grips the transferred substrate, the transferred substrate gripping portion surrounding the gripping area of the transferred substrate and having a side wall portion extending to the transfer substrate gripping portion, and the side wall portion abutting against the transfer substrate gripping portion to form an enclosed space surrounding the gripping area of the transfer substrate and the gripping area of the transferred substrate, and the pressure adjustment portion may adjust the pressure of the enclosed space.

This allows the area in which pressure is adjusted to be limited, shortening the time required to adjust the pressure.

Here, the pressure adjustment unit may be a pressure reducing mechanism, and the pressure around the specified element may be reduced when the blister is generated, and the area around the specified element may be opened to the atmosphere when the specified element is held on the transfer substrate.

On the other hand, the pressure adjustment unit is a pressurizing mechanism, and when the blister is generated, the area around the specified element is opened to the atmosphere, and when the specified element is held on the transfer substrate, pressure is applied around the specified element.

The transfer method and transfer device of the present invention can prevent elements from being misaligned after being transferred onto a transfer substrate due to blistering.

FIG. 2 is a diagram illustrating a transfer device for carrying out the transfer method of the present invention. FIG. 2 is a diagram illustrating a transfer step in one embodiment of the present invention. 1A to 1C are diagrams illustrating a blister contraction process in one embodiment of the present invention. 1A to 1C are diagrams illustrating a transfer method in one embodiment of the present invention. FIG. 13 is a diagram illustrating a transfer device according to another embodiment of the present invention. 11A to 11C are diagrams illustrating a transfer step in another embodiment of the present invention. 1A and 1B are diagrams illustrating an example of a failure in element transfer in a conventional transfer method.

The transfer device for carrying out the transfer method of the present invention will be described with reference to FIG.

The transfer device 10 includes a laser irradiation unit 12 that irradiates laser light 11, a transfer substrate gripping unit 13 that holds a transfer substrate 22 and is movable in at least the X-axis and Y-axis directions, a transfer substrate gripping unit 14 that is located below the transfer substrate gripping unit 13 and holds a transfer substrate 23 so as to face the transfer substrate 22 with a gap, and a control unit (not shown). The transfer substrate 22 is irradiated with laser light 11 to cause ablation in the transfer substrate, and the element 21 is transferred from the transfer substrate 22 to the transfer substrate 23.

The laser irradiation unit 12 is an embodiment of the energy irradiation unit in the present invention, and is a device that irradiates laser light 11 such as an excimer laser, which is an active energy ray, and is fixed to the transfer device 10. In this embodiment, the laser irradiation unit 12 intermittently emits spot-shaped laser light 11, and the irradiation position of the laser light 11 in the X-axis direction and the Y-axis direction is controlled via a galvanometer mirror 15 and an Fθ lens 16, the angles of which are adjusted by a control unit, and the laser light 11 is selectively irradiated to a plurality of elements 21 arranged on a transfer substrate 22 held by a transfer substrate gripper 13. When the laser light 11 is incident on the vicinity of the elements 21 through the transfer substrate 22, ablation occurs between the transfer substrate 22 and the elements 21 due to the application of active energy (light energy), and the elements 21 are energized by this ablation, and the elements 21 are transferred from the transfer substrate 22 to the transfer substrate 23. In this description, the elements 21 are, for example, semiconductor chips.

The transfer device 10 also has a mirror 17a that reflects the laser light 11 emitted from the laser emission unit 12 directly below (in the Z-axis direction) and a mirror 17b that reflects the laser light 11 reflected by the mirror 17a and makes it incident on the galvanometer mirror 15. An optical system including an expander lens and a collimator lens (not shown) is provided between the laser emission unit 12 and the mirror 17a.

In addition, the mirror 17b, the galvanometer mirror 15, and the Fθ lens 16, which are enclosed by the two-dot chain line in FIG. 1, are attached to a common frame and can move together in the Z-axis direction. By moving these in the Z-axis direction, the focal position of the laser light 11 in the vicinity of the transfer substrate 22 in the Z-axis direction can be adjusted.

The transfer substrate gripper 13 has an opening and grips the vicinity of the outer periphery of the transfer substrate 22 by suction. The laser light 11 emitted from the laser irradiation unit 12 can be applied to the transfer substrate 22 held by the transfer substrate gripper 13 through this opening.

The transfer substrate 22 is a substrate made of a material such as glass that is capable of transmitting the laser light 11, and holds the element 21 on the underside. A blistering layer 24 is formed on the surface of the transfer substrate 22 that holds the element 21, and the surface of the blistering layer 24 has adhesive properties. The adhesive force of the surface of the blistering layer 24 serves as a holding force for the element 21, and adhesively holds the element 21.

The transfer substrate gripper 13 is moved relative to the transferred substrate gripper 14 in the X-axis direction, the Y-axis direction, and the Z-axis direction by a movement mechanism (not shown). A control unit (not shown) controls this movement mechanism and adjusts the position of the transfer substrate gripper 13, thereby adjusting the relative position of the element 21 held on the transfer substrate 22 with respect to the transferred substrate 23.

Here, the transfer substrate gripping portion 13 has a side wall portion 41 that extends downward (towards the transferred substrate gripping portion 14) so as to surround the area for gripping the transfer substrate 23. The height of the lower end of the side wall portion 41 is uniform, and when the transfer substrate gripping portion 13 approaches the transferred substrate gripping portion 14, the entire lower end of the side wall portion 41 simultaneously abuts against the upper surface of the transferred substrate gripping portion 14. In addition, an O-ring is provided at the lower end of the side wall portion 41, and at least the lower end of the side wall portion 41 is flexible.

The pressure adjustment unit 40 is connected to the inside of the side wall 41 of the transfer substrate gripping unit 13. The pressure adjustment unit 40 in this embodiment has a pressure reduction pump 42, a three-way valve 43, and an atmosphere opening unit 44. The connection destination of a pipe 45 connected to the transfer substrate gripping unit 13 can be switched by the three-way valve 43, and the connection is switched between a case where the pipe 45 is connected to the pressure reduction pump 42 via the three-way valve 43 and a case where the pipe 45 is connected to the atmosphere opening unit 44 via the three-way valve 43. Note that in this embodiment, the atmosphere opening unit 44 is a pipe whose end not connected to the three-way valve 43 is not connected to anything (open).

The transferred substrate gripper 14 has a flat upper surface, and grips the transferred substrate 23 so that during the transfer process of the element 21, the blistering layer 24 of the transfer substrate 22 and the element 21 held by the blistering layer 24 face the transferred surface of the transferred substrate 23. The upper surface of the transferred substrate gripper 14 has multiple suction holes, and grips the back surface of the transferred substrate 23 (the surface to which the element 21 is not transferred) by suction force.

Here, the transfer substrate 23 in this embodiment is a substrate made of a material such as glass, and an adhesive catch layer 25 is provided on the transfer surface (the surface that receives the element 21), which adhesively holds the element 21 transferred from the transfer substrate 22.

In this embodiment, only the transfer substrate gripping part 13 moves in the X-axis and Y-axis directions, thereby causing the transfer substrate gripping part 13 and the transferred substrate gripping part 14 to move relatively in the X-axis and Y-axis directions. However, if the dimensions of the transferred substrate 23 are large and the entire surface of the transferred substrate 23 cannot be positioned directly under the irradiation range of the laser light 11, the transferred substrate gripping part 14 may also be provided with a movement mechanism in the X-axis and Y-axis directions.

When the transfer substrate gripping part 13 approaches the transfer substrate gripping part 14 while gripping the transfer substrate 22, the side wall part 41 comes into contact with the surface of the transfer substrate gripping part 14, forming an enclosed space surrounded by the gripping area of the transfer substrate 22 in the transfer substrate gripping part 13, the transfer substrate 22, the gripping area of the transfer substrate 23 in the transfer substrate gripping part 14, and the side wall part 41, as shown in FIG. 1. The decompression pump 42 decompresses this enclosed space. This decompression reduces (adjusts) the pressure around the element 21 held on the transfer substrate 22. In addition, by forming an enclosed space as in this embodiment, the area in which the pressure is adjusted can be limited, and the time required to adjust the pressure can be shortened.

For convenience, in FIG. 1, the side wall portion 41 is depicted as being in the vicinity of the transferred substrate 23. However, in the actual configuration, the side wall portion 41 abuts against the transferred substrate gripping portion 14 at a position sufficiently distant from the gripping area of the transferred substrate 23 so that the side wall portion 41 and the transferred substrate gripping portion 14 do not collide with each other even if the transfer substrate gripping portion 13 and the transferred substrate gripping portion 14 move relative to each other in the XY directions, as described below.

In the transfer device 10 having the above configuration, the transfer substrate 22 and the transferred substrate 23 are opposed to each other with the element 21 sandwiched therebetween, and laser light 11 is irradiated toward the element 21 through the transfer substrate 22. When the laser light 11 is irradiated onto the blistering layer 24, part of the material of the blistering layer 24 is decomposed by the energy of the laser light 11, generating gas. This decomposition of the material of the blistering layer 24 and the generation of gas generates blisters (air bubbles) 30 inside the blistering layer 24 or between the glass surface 22a of the transfer substrate 22 and the blistering layer 24, as shown in FIG. 1. The phenomenon in which blisters 30 are generated in this manner is referred to as blistering in this description.

One embodiment of the transfer process, which is one step in the transfer method using the transfer device of the present invention, will be described with reference to FIG. 2. FIG. 2(a) is a view taken along the line AA in FIG. 1, and FIG. 2(b) is a front view including the transfer substrate 22 and the transferred substrate 23.

In the transfer process of this embodiment, as shown in FIG. 2(a), the laser light 11 is irradiated multiple times while changing the irradiation position in an area (indicated by the dashed line in FIG. 2(a)) where one element 21 is held in the blistering layer 24 provided on the transfer substrate 22, and the small blisters formed at each irradiation position are linked to form one large dome-shaped blister 30 as shown in FIG. 2(b). By forming the blister 30 in this manner, the element 21 is brought closer to the transfer substrate 23 while being held on the surface portion of the blistering layer 24, and the contact area between the blistering layer 24 and the element 21 is reduced, so that the element 21 is transferred from the transfer substrate 22 to the transfer substrate 23. In this embodiment, the change in the irradiation position of the laser light 11 (hereinafter also referred to as the irradiation spot) is performed by the galvanometer mirror 15, which is the irradiation position control unit, as described above.

At this time, the trajectory of the movement of the irradiation spot of the laser light 11 in this embodiment is a roughly spiral shape, as shown in FIG. 2(a), with linear movement in the X-axis direction, a 90-degree rotation in the movement direction, linear movement in the Y-axis direction, and a 90-degree rotation in the movement direction being repeated. The laser light 11 is then irradiated so that the intervals between each irradiation spot are roughly uniform.

Here, the first pressure P1, which is the pressure around the element 21 during this transfer process, is set to below atmospheric pressure in this embodiment by the operation of the pressure reduction pump 42.

Next, one embodiment of the blister contraction process, which is one step in the transfer method, will be described with reference to FIG. 3.

The blister shrinkage process in the present invention is a process in which the blister 30 formed for the transfer of the element 21 is forcibly shrunk after the transfer process is performed.

In this embodiment, in the transfer process, the element 21 is transferred at a first pressure P1 that is equal to or lower than atmospheric pressure, whereas in the blister contraction process, the pressure around the element 21 is changed to a second pressure P2 that is higher than the first pressure P1. Specifically, the three-way valve 43 of the pressure adjustment unit 40 is operated to connect the pipe 45 to the atmosphere release unit 44, thereby opening the element 21 to the atmosphere so that the pressure around the element 21 becomes the second pressure P2, which is atmospheric pressure.

In this way, the pressure around the element during the blister contraction process becomes higher than the pressure during the transfer process, and the force pushing the blister 30 from the outside increases, as shown by the arrows in Figure 3. This causes the blister 30 to contract, forcing the blistering layer 24 away from the element 21.

Next, the flow of the transfer method in one embodiment of the present invention will be explained using FIG.

First, as shown in the left half of FIG. 4(a), the transfer substrate 22 holds the element 21, and in a state in which the element 21 and the transferred substrate 23 are spaced apart, the transfer substrate 22 and the transferred substrate 23 are opposed to each other so as to sandwich the element 21. In this description, this process is called the transfer preparation process. After this transfer preparation process, the pressure around the element 21 is set to a first pressure P1, which is a reduced pressure state.

Next, as shown in the right half of FIG. 4(a), the laser light 11 is irradiated near a specific element 21 to generate blisters 30 in the blistering layer 24, thereby bringing the element 21 close to the transfer substrate 23 and holding it on the transfer substrate 23. This process is called the transfer process, as described above.

Figure 4(b) shows a state in which the transfer process progresses and the holding area of one element 21 is irradiated with the laser light 11 multiple times, forming a large blister 30, and the entire element 21 is transferred to the catch layer 25 of the transfer substrate 23 with the blistering layer 24 attached to the element 21. Here, because the pressure around the element 21 is in a reduced pressure state, air resistance is reduced when the element 21 moves toward the transfer substrate 23, and it is possible to reduce deviations in the transfer position caused by air resistance.

Next, as shown in FIG. 4(c), the surroundings of the element 21 are opened to the atmosphere and the pressure is increased to a second pressure P2, which is atmospheric pressure, to contract the blister 30. As described above, this process is called the blister contraction process, and as the blister 30 contracts, the blister 30 shrinks and the blistering layer 24 separates from the element 21.

After the elements 21 transferred to the transfer substrate 23 and the blistering layer 24 are completely separated by the blister contraction process, the transfer substrate 22 and the transfer substrate 23 move relative to each other in the arrangement direction of the elements 21 on the transfer substrate 22 (the X-axis direction in FIG. 4) as shown in FIG. 4(d). In this description, this process is called the arrangement direction movement process. In this embodiment, the transfer substrate gripper 13 moves in the X-axis direction, causing the transfer substrate 22 and the transfer substrate 23 to move relative to each other.

By carrying out the arrangement direction movement process in this manner, the pitch of the elements 21 on the transfer substrate 22 can be adjusted from the distance D1 shown in FIG. 4(a) to any desired pitch, allowing multiple elements 21 to be arranged on the transfer substrate 23 at any desired pitch, as described below.

If the arrangement direction movement process is to be carried out without the blister contraction process as in the conventional method, even after the entire surface of element 21 that is held by transfer substrate 23 is held by transfer substrate 23, there is a possibility that blistering layer 24 will continue to adhere to element 21 until blisters 30 naturally shrink.

If the arrangement direction movement process is performed while the blistering layer 24 is still attached to the element 21, the element 21 on the transfer substrate 23 may be pulled by the blistering layer 24, resulting in misalignment.

Whether or not the blistering layer 24 causes the element 21 to shift position in this way depends on the variations in the pressing force and adhesion to the catch layer 25 caused by the size and shape of the blister 30, and the variations in the adhesive strength and thickness of the blistering layer 24 itself. If it is caused by the element 21, it depends on the non-uniformity of the shape of the element 21 and the resulting variations in adhesion to the catch layer. If it is caused by the catch layer 25, it depends on the variations in its adhesive strength and thickness. If it is caused by the laser light 11, it depends on the irradiation position and variations in energy distribution.

In contrast, in the present invention, a blister contraction process is provided before the arrangement direction movement process, so that the elements 21 are completely separated from the blistering layer 24 at the start of the arrangement direction movement process. This makes it possible to prevent the above-mentioned positional deviation of the elements 21 on the transfer substrate 23.

In addition, in this embodiment, the second pressure P2 is atmospheric pressure, and the arrangement direction movement process is performed in an open-to-air state, so it is relatively easy to move the transfer substrate gripping portion 13 and the transferred substrate gripping portion 14 relative to each other. Here, the transfer substrate gripping portion 13 and the transferred substrate gripping portion 14 may be spaced slightly apart in the Z-axis direction to prevent rubbing between the side wall portion 41 and the transferred substrate gripping portion 14 during relative movement.

When the transfer substrate 22 and the transferred substrate 23 have moved relative to each other by a predetermined distance in the arrangement direction movement process, the next element 21 to be transferred faces the transferred substrate 23, which corresponds to the transfer preparation process for the next element 21 having been completed. Then, after the pressure around the element 21 is changed again to the first pressure P1, the next element 21 is irradiated with the laser light 11 as shown in FIG. 4(e), and the transfer process for the next element 21 is performed.

By going through the above-mentioned transfer preparation process, transfer process, blister bursting process, and arrangement direction movement process, the pitch between the elements 21 on the transfer substrate 22 (distance D1) is adjusted to an arbitrary pitch between the elements 21 on the transfer substrate 23, as shown by distance D2 in Figure 4 (e), and the next element 21 is then transferred from the transfer substrate 22 to the transfer substrate 23.

The above transfer method makes it possible to prevent the element from becoming misaligned after being transferred onto the receiving substrate due to blistering.

The transfer method of the present invention is not limited to the above-described form, and may be in other forms within the scope of the present invention. For example, in the above description, the pressure adjustment unit 40 is a decompression mechanism, the first pressure P1 is in a decompression state, and the second pressure P2 is in an atmospheric pressure state, but this is not limited thereto, and the pressure adjustment unit 40 may be a pressurization mechanism, the first pressure P1 is in an atmospheric pressure state, and the second pressure P2 is in a pressurized state.

In addition, in the above embodiment, the side wall portion extends from the transfer substrate gripping portion to the transfer substrate gripping portion, but this is not limited thereto, and it may extend from the transfer substrate gripping portion to the transfer substrate gripping portion.

In the above description, the pressure adjustment unit 40 adjusts the pressure locally around the transfer substrate 22 by providing the side wall portion 41 as shown in FIG. 1, but this is not limited thereto. For example, as shown in FIG. 5, a chamber wall 46 that houses the entire transfer device 10 may be provided, and the pressure adjustment unit 40 may adjust the pressure inside the chamber wall 46, i.e., around the entire transfer device 10.

In addition, in the above description, the trajectory of the movement of the irradiation spot is approximately spiral-shaped as shown in Figure 2(a) etc., but this is not limited to this and may be, for example, zigzag-shaped as shown in Figure 6.

In addition, if the area of element 21 is sufficiently small, laser light 11 may be irradiated only once in one transfer process.

In addition, in the above explanation, the blister contraction process is performed after the entire element 21 is transferred to the transfer substrate 23, but this is not limited thereto. For example, as shown in FIG. 4(a), if the transfer process has a form in which a part of the element 21 first comes into contact with the transfer substrate 23, and then the part held by the transfer substrate 23 gradually increases, so that the entire element 21 is finally held by the transfer substrate 23, the blister contraction process may be performed when a part of the element 21 is held by the transfer substrate 23.

In the above description, the laser light 11 is irradiated within the element holding area shown by the dashed line in FIG. 2(a) and other figures, but this is not limiting. The laser light 11 may be irradiated in the vicinity of the element holding area and around the element holding area, provided that the effect of bringing the specified element 21 closer to the transfer substrate 23 by blistering is achieved.

In addition, it is not necessary that the blistering layer 24 adheres to the elements 21 of all elements 21 on the transfer substrate 22 even after transfer to the transfer substrate 23. In cases where there is a risk that the blistering layer 24 adheres to the elements 21 of some elements 21 even after transfer to the transfer substrate 23, a transfer method having a blister contraction process as in the present invention can be suitably used.

In addition, in the above description, the blistering layer and catch layer hold the element by adhesive force, but the element may be held by a holding force other than adhesive force.

10 Transfer device 11 Laser light (active energy ray)
12 Laser light source (energy irradiation unit)
13 Transfer substrate gripping portion 14 Transferred substrate gripping portion 15 Galvanometer mirror 16 Fθ lens 17a Mirror 17b Mirror 21 Element 22 Transfer substrate 22a Glass surface 23 Transferred substrate 24 Blistering layer 24a Rupture portion 25 Catch layer 30 Blister 40 Pressure adjustment portion 41 Side wall portion 42 Compressed air source 43 Three-way valve 44 Atmospheric release portion 45 Pipe 46 Chamber wall 111 Laser light 121 Element 122 Transfer substrate 123 Transferred substrate 124 Blistering layer 125 Catch layer 130 Blister

Claims (9)

A transfer method for transferring an element held on a transfer substrate to a transfer substrate,
a transfer preparation step of placing the element held on the transfer substrate and the transfer substrate opposite each other;
a transfer step of holding the predetermined element on the transfer substrate by generating blisters on the transfer substrate in or near a holding region of the predetermined element in an environment where the pressure around the predetermined element is a first pressure;
a blister contracting step of changing the pressure around the predetermined element to a second pressure higher than the first pressure to contract the blister;
A transfer method comprising the steps of: The transfer method according to claim 1, further comprising an arrangement direction movement step of relatively moving the transfer substrate and the transferred substrate in the arrangement direction of the elements on the transfer substrate after the blister is contracted. The transfer method according to claim 1, characterized in that the first pressure is lower than atmospheric pressure and the second pressure is atmospheric pressure. The transfer method according to claim 1, characterized in that the first pressure is atmospheric pressure and the second pressure is higher than atmospheric pressure. A transfer device that transfers an element held on a transfer substrate to a transfer substrate by irradiating the transfer substrate with active energy rays,
an energy irradiation unit that irradiates the transfer substrate with active energy rays to generate blisters in a holding region of a predetermined element on the transfer substrate or in the vicinity thereof;
a pressure adjusting unit that adjusts the pressure around at least an element held on the transfer substrate;
Equipped with
The pressure adjustment unit is characterized in that it shrinks the blister by changing the pressure around the specified element when the specified element is held on the transfer substrate to a second pressure higher than the first pressure, which is the pressure around the specified element when the energy irradiation unit creates the blister on the transfer substrate. The transfer device according to claim 5, further comprising a transfer substrate gripping section for gripping the transfer substrate and a transferee substrate gripping section for gripping the transferee substrate, the transfer substrate gripping section having a side wall section surrounding a gripping area of the transfer substrate and extending to the transferee substrate gripping section, the side wall section coming into contact with the transferee substrate gripping section to form an enclosed space surrounding the gripping area of the transfer substrate and the gripping area of the transferee substrate, and the pressure adjustment section adjusting the pressure of the enclosed space. The transfer device according to claim 5, further comprising a transfer substrate gripping section for gripping the transfer substrate and a transferee substrate gripping section for gripping the transferee substrate, the transferee substrate gripping section having a side wall section surrounding a gripping area of the transferee substrate and extending to the transfer substrate gripping section, the side wall section coming into contact with the transfer substrate gripping section to form an enclosed space surrounding the gripping area of the transfer substrate and the gripping area of the transferee substrate, and the pressure adjustment section adjusting the pressure of the enclosed space. The transfer device according to claim 5, characterized in that the pressure adjustment unit is a pressure reducing mechanism, which reduces the pressure around the specified element when the blister is generated, and opens the area around the specified element to the atmosphere when the specified element is held on the transfer substrate. The transfer device according to claim 5, characterized in that the pressure adjustment unit is a pressurizing mechanism, which opens the periphery of the specified element to the atmosphere when the blister is generated, and pressurizes the periphery of the specified element when the specified element is held on the transfer substrate.

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