JP2024016866A - Mounting device and semiconductor device manufacturing method - Google Patents

Abstract

To provide a technique that can improve the accuracy of abnormality inspection on the side of a device.SOLUTION: A mounting device includes at least one pair of mirrors installed to face each other, an imaging device provided such that a die and a reflective surface of the mirror are located within a field of view, an illumination device that emits illumination light along an optical axis of the imaging device, and wraparound light prevention means that prevents light passing around the die from reaching the imaging device among the light reflected by one of the reflective surfaces of the pair of mirrors.SELECTED DRAWING: Figure 4

Description

The present disclosure relates to a mounting device, and is applicable to, for example, a die bonder that inspects the side surface of a die.

A mounting device such as a die bonder is a device that attaches, for example, an element onto a substrate or an element using a bonding material. The bonding material is, for example, liquid or film resin, solder, or the like. The element is, for example, a semiconductor chip, a MEMS (Micro Electro Mechanical System), a die such as a glass chip, or an electronic component. The substrate is, for example, a wiring board, a lead frame made of a thin metal plate, a glass substrate, or the like.

In a die bonder, for example, the positioning of the element is performed or the side surface inspection of the element is performed based on an image acquired using a camera (for example, Patent Document 1).

Japanese Patent Application Publication No. 2014-179558

An object of the present disclosure is to provide a technique that can improve the accuracy of abnormality inspection on the side of a device. Other objects and novel features will become apparent from the description of this specification and the accompanying drawings.

A brief overview of typical features of the present disclosure is as follows.
That is, the mounting device includes at least one pair of mirrors installed to face each other, an imaging device installed so that the die and the reflective surface of the mirror are located within the field of view, and an illumination device along the optical axis of the imaging device. An illumination device that irradiates light, and a wrap-around light prevention device that prevents light that passes around the die from reaching the imaging device, out of the light that is reflected by one of the reflective surfaces of the pair of mirrors. .

According to the present disclosure, it is possible to improve the accuracy of abnormality inspection on the side surface of an element.

FIG. 1 is a schematic top view of a die bonder in an embodiment. FIG. 2 is a schematic side view of the die bonder shown in FIG. 1. FIG. 3 is a flowchart showing a method for manufacturing a semiconductor device using the die bonder shown in FIG. FIG. 4 is a schematic diagram showing a stage recognition camera, coaxial illumination, and intermediate stage in the embodiment. FIG. 5 is a schematic diagram showing illumination light of coaxial illumination at an intermediate stage in a comparative example. FIG. 6 is a diagram showing a side image of the die using the coaxial illumination light shown in FIG. FIG. 7 shows a side view of the die in ideal illumination. FIG. 8 is a diagram illustrating an intermediate stage in one aspect of the embodiment. FIG. 9 is a diagram showing an intermediate stage in another aspect of the embodiment. FIG. 10 is a photographic image of the die at three different angles of the reflective surfaces of the mirrors. FIG. 11 is a diagram showing the configuration of the intermediate stage and the optical path of transmitted light in the first modification. FIG. 12 is a top view of the intermediate stage shown in FIG. 11. FIG. 13 is a diagram showing the optical path of reflected light on the intermediate stage shown in FIG. 11. FIG. 14 is a diagram showing a stage recognition camera, a lighting device, and an intermediate stage in a second modification. FIG. 15 is a diagram illustrating an irradiation area of the surface emitting illumination shown in FIG. 14. FIG. 16 is a diagram showing a region irradiated with illumination light of the surface emitting illumination shown in FIG. 15. FIG. 17 is a diagram illustrating the irradiation area of surface emitting illumination in the third modification. FIG. 18 is a diagram showing a region irradiated with illumination light of the surface emitting illumination shown in FIG. 17.

Embodiments and modified examples will be described below with reference to the drawings. However, in the following description, the same constituent elements may be denoted by the same reference numerals and repeated explanations may be omitted. In addition, in order to make the explanation clearer, the drawings may schematically represent the width, thickness, shape, etc. of each part compared to the actual aspect. Moreover, the dimensional relationship of each element, the ratio of each element, etc. do not necessarily match between a plurality of drawings.

First, the configuration of a die bonder according to an embodiment will be described using FIGS. 1 and 2. FIG. 1 is a schematic top view of a die bonder in an embodiment. FIG. 2 is a schematic side view of the die bonder shown in FIG. 1.

The die bonder 1 is roughly divided into a die supply section 10, a pickup section 20, an intermediate stage section 30, a bonding section 40, a transport section 50, and a control section (control device) 80 that monitors and controls the operation of each section. , has. The Y-axis direction is the front-rear direction of the die bonder 1, and the X-axis direction is the left-right direction. The die supply section 10 is arranged on the front side of the die bonder 1, and the bonding section 40 is arranged on the rear side.

The die supply unit 10 includes a wafer holding table (not shown) that holds the wafer W, and a peeling unit 13 that peels the die D from the wafer W. The wafer holding table is moved in the X and Y directions by a drive means (not shown), and the die D to be picked up is moved to the position of the peeling unit 13. The peeling unit 13 is moved in the vertical direction by a drive means (not shown). The wafer W is adhered onto a dicing tape DT and is divided into a plurality of dies D. The dicing tape DT to which the wafer W is attached is held by a wafer ring (not shown). A film-like adhesive material called a die attach film (DAF) is attached between the wafer W and the dicing tape DT. Die attach film is cured by heating.

The pickup section 20 includes a pickup head 21, a wafer recognition camera 24, and an illumination device 25. The pickup head 21 has a collet 22 that attracts and holds the peeled die D at its tip, picks up the die D from the die supply section 10, and places it on the intermediate stage 31. The wafer recognition camera 24 grasps the pickup position of the die D to be picked up from the wafer W. The pickup section 20 has drive sections (not shown) that move the pickup head 21 up and down, rotate it, and move it in the X and Y directions.

The intermediate stage section 30 includes an intermediate stage 31, a stage recognition camera 34, and an illumination device 35. The intermediate stage 31 includes mirrors 311a to 311d, a pedestal 312 on which the die D is temporarily placed, and a base 313. The mirrors 311a to 311d may be collectively referred to as mirrors 311. The stage recognition camera 34 is installed above the intermediate stage 31 and photographs the die D on the intermediate stage 31. The illumination device 35 is, for example, a coaxial illumination installed between the stage recognition camera 34 and the intermediate stage 31.

Further, the mirrors 311 have reflective surfaces inclined at a predetermined angle with respect to the optical axis of the stage recognition camera 34, and four mirrors 311 are installed on the base 313. Note that the number of mirrors 311 is not limited to four, and when recognizing only two specific sides of the die D, the number may be two. One mirror 311 facing one side of the die D may be composed of a plurality of mirrors.

The mirror 311 is, for example, a triangular prism whose opposing sides are in the shape of a right-angled isosceles triangle, and whose other sides, a bottom surface, and a slope having a reflective surface are rectangular. That is, the reflective surface is planar. The mirror 311 may be composed of a prism instead of a mirror.

The predetermined angle is an angle at which the illumination light of the illumination device 35 is irradiated at an angle close to perpendicular to the side surface of the die D, and the side surface of the die D can be imaged at an angle close to perpendicular. A side image of the die D is reflected on the reflective surface of the mirror 311, and the stage recognition camera 34 installed above the intermediate stage 31 images the top surface and four side surfaces of the die D simultaneously (with one exposure) for inspection. It is possible to do so.

The die D is temporarily placed on the pedestal 312. The mounting surface of the pedestal 312 on which the die D is mounted is higher than the surface on which the mirror 311 is installed (the upper surface of the base 313). Further, the pedestal 312 has a columnar shape, for example, and its upper surface, which is a mounting surface, is smaller than the die D. In this case, the size is such that the outer peripheral end of the die D does not bend and deform when the die D is attracted to the mounting surface. This allows the mirror 311 to be provided close to the die D. Further, it becomes easier to photograph the lower end of the die D. Furthermore, it becomes possible to deal with the case where the size of the die to be placed changes. For this reason, although it is preferable to provide the pedestal 312, it is not necessary to provide it.

The stage recognition camera 34 is installed, for example, directly above the intermediate stage 31, and is installed with its viewing angle directed vertically downward so that the central axis of the intermediate stage 31 and the optical axis of the stage recognition camera 34 coincide. The stage recognition camera 34 is installed so that the die D and the reflective surfaces of the four mirrors 311 are located within the field of view. The illumination device 35 irradiates light to make the die D placed on the intermediate stage 31 bright enough to be photographed by the stage recognition camera 34 . The reflected light of the irradiated light enters four mirrors 311. With this configuration, the stage recognition camera 34 can photograph the die D from the side surface to the top surface.

The light images incident on the four mirrors 311 are incident along the optical axis of the stage recognition camera 34 installed above the four mirrors 311. The stage recognition camera 34 photographs the subject images reflected from the upper surface of the die D and the four mirrors 311, respectively. The image taken by the stage recognition camera 34 is output to the control unit 80, undergoes image processing, and may also be displayed on a display screen (not shown).

The bonding section 40 includes a bond head 41, a substrate recognition camera 44, and a bond stage 46. Like the pickup head 21, the bond head 41 has a collet 42 that attracts and holds the die D at its tip. The board recognition camera 44 images a position recognition mark (not shown) on the board S and recognizes the bond position. Here, a plurality of product areas (hereinafter referred to as package areas P) are formed on the substrate S, which will eventually become one package. A position recognition mark is provided for each package area P. When the die D is placed on the substrate S, the bond stage 46 is moved upward and supports the substrate S from below. The bond stage 46 has a suction port (not shown) for vacuum suctioning the substrate S, and is capable of fixing the substrate S. The bond stage 46 has a heating section (not shown) that heats the substrate S. Note that the bonding section 40 has drive sections (not shown) that move the bond head 41 up and down, rotate it, and move it in the X direction and the Y direction.

With such a configuration, the bond head 41 corrects the pickup position and posture based on the image data of the stage recognition camera 34, and picks up the die D from the intermediate stage 31. Then, the bond head 41 bonds onto the package area P of the substrate S based on the imaging data of the substrate recognition camera 44, or stacks it on top of the die already bonded onto the package area P of the substrate S. Bond.

The transport section 50 has a transport lane 52 along which the substrate S moves. The transport lane 52 transports the substrate S in the X-axis direction. With this configuration, the substrate S is moved from a substrate supply section (not shown) to a bonding position (mounting position) along the transport lane 52, and after bonding, is moved to a substrate unloading section (not shown) or returned to the substrate supply section. or

The control unit 80 includes a memory that stores a program (software) that monitors and controls the operations of each of the above-mentioned parts of the die bonder 1, and a central processing unit (CPU) that executes the program stored in the memory.

A bonding process (manufacturing method), which is one step in the manufacturing process of a semiconductor device using the die bonder 1, will be described with reference to FIG. FIG. 3 is a flowchart showing a method for manufacturing a semiconductor device using the die bonder shown in FIG. In the following description, the operation of each part constituting the die bonder 1 is controlled by the control section 80.

(Wafer loading process: process S1)
A wafer ring (not shown) is supplied to a wafer cassette (not shown) of the die bonder 1 . The supplied wafer ring is supplied to the die supply section 10 and carried into the die bonder 1. Here, the wafer ring holds a dicing tape DT to which dies D divided from the wafer W are attached.

(Substrate loading process: process S2)
A substrate transport jig in which the substrate S is stored is supplied to a substrate supply section and carried into the die bonder 1. In the substrate supply section, the substrate S is taken out from the substrate transport jig and fixed to transport claws (not shown).

(Pickup process: process S3)
After step S1, the wafer holding table is moved so that a desired die D can be picked up from the dicing tape DT. The die D is photographed by the wafer recognition camera 24, and positioning and surface inspection of the die D are performed based on the image data obtained by photographing.

The positioned die D is peeled off from the dicing tape DT by the peeling unit 13 and the pickup head 21. The die D peeled off from the dicing tape DT is attracted and held by the collet 22 provided on the pickup head 21, and is transported to and placed on the intermediate stage 31.

The die D on the intermediate stage 31 is photographed by the stage recognition camera 34, and positioning and surface inspection of the die D are performed based on the image data acquired by photographing. By image processing the image data, the amount of deviation (X, Y, θ directions) of the die D on the intermediate stage 31 from the die position reference point of the die bonder is calculated and positioning is performed. Note that the die position reference point is previously held at a predetermined position of the intermediate stage 31 as the initial setting of the apparatus. The surface inspection of die D is performed by image processing the image data.

The pickup head 21 that has transported the die D to the intermediate stage 31 is returned to the die supply section 10. The next die D is peeled off from the dicing tape DT according to the above-described procedure, and thereafter the dies D are peeled off one by one from the dicing tape DT according to the same procedure.

(Bond process: process S4)
The substrate S is transported to the bonding stage 46 by the transport section 50 . The substrate S placed on the bond stage 46 is imaged by the substrate recognition camera 44, and image data is acquired by the imaging. By image processing the image data, the amount of deviation (X, Y, θ directions) of the substrate S from the substrate position reference point of the die bonder 1 is calculated. Note that the substrate position reference point is previously held at a predetermined position of the bonding section 40 as the initial setting of the apparatus.

The suction position of the bond head 41 is corrected based on the displacement amount of the die D on the intermediate stage 31 calculated in step S3, and the die D is suctioned by the collet 42. The die D is bonded to a predetermined location on the substrate S supported by the bonding stage 46 by the bond head 41 that has picked up the die D from the intermediate stage 31 . Here, the predetermined location on the substrate S is the package area P of the substrate S, the area where an element is already mounted and where the element is bonded in addition to it, or the bond area of the element to be laminated and bonded. be. The die D bonded to the substrate S is photographed by the substrate recognition camera 44, and based on the image data acquired by the photographing, an inspection is performed to determine whether the die D is bonded at a desired position. If the inspected die D is defective, the bond head 41 transports the die D to a disposal area.

The bond head 41 that has bonded the die D to the substrate S is returned to the intermediate stage 31. Following the procedure described above, the next die D is picked up from the intermediate stage 31 and bonded to the substrate S. This process is repeated to bond the die D to all predetermined locations on the substrate S.

(Substrate unloading process: process S5)
The substrate S to which the die D is bonded is transported to a substrate unloading section. At the substrate unloading section, the substrate S is taken out from the substrate transport claw and stored in a substrate transport jig. The substrate S stored in the substrate transport jig is carried out from the die bonder 1.

After step S5, the substrate S to which the die D is bonded is transported to a wire bonding step, and the electrode of the die D is electrically connected to the electrode of the substrate S via an Au wire or the like. For example, in the case of stack bonding, the substrate S to which the die D is bonded is then carried into the die bonder, the die D is stacked on the die D bonded to the substrate S, and after being carried out from the die bonder, It is electrically connected to the electrode of the substrate S via the Au wire in a wire bonding process. The dies D above the second stage are separated from the dicing tape DT by the method described above, and then transported to the bonding section 40 and stacked on the dies D. After the above process is repeated a predetermined number of times, the substrate S is transferred to a molding process, and the plurality of dies D and Au wires are sealed with a molding resin (not shown), thereby completing a stacked package.

Next, the lighting device 35 will be explained. FIG. 4 is a schematic diagram showing a stage recognition camera, coaxial illumination, and intermediate stage in the embodiment.

As shown in FIG. 4, the illumination device 35 is arranged between the stage recognition camera 34 and the intermediate stage 31. The illumination device 35 includes a surface emitting illumination (light source) 351 and a half mirror (semi-transmissive mirror) 352. The irradiation light from the surface emitting illumination 351 is reflected by the half mirror 352 in the same optical axis direction as the stage recognition camera 34, and is irradiated onto the die D of the intermediate stage 31. The illumination light irradiated onto the die D along the same optical axis as the stage recognition camera 34 is reflected by the die D, and the reflected light passes through the half mirror 352 and reaches the stage recognition camera 34, forming an image of the die D. do. The illumination device 35 is a coaxial epi-illumination (coaxial illumination) device.

When a mirror 311 having a reflective surface tilted approximately 45 degrees with respect to the optical axis of the stage recognition camera 34 is installed on the intermediate stage 31, the illumination light from the coaxial illumination (coaxial illumination light) is reflected on the mirror 311, and after reflection, The illumination light is irradiated substantially perpendicularly to the side surface of the die D. Then, the light reflected from the side surface of the die D is reflected by the mirror 311, and the reflected light reaches the stage recognition camera 34. That is, substantially vertical illumination and substantially vertical photographing can be performed on the four sides of the die D.

Next, in order to make the embodiment more clear, problems with side imaging will be described using FIGS. 5 to 7.

FIG. 5 is a schematic diagram showing coaxial illumination light at an intermediate stage in a comparative example. FIG. 6 is a diagram showing a side image of the die using the coaxial illumination light shown in FIG. FIG. 7 shows a side view of the die in ideal illumination.

As shown in FIG. 5, when the inclination (θ) of the reflective surfaces of the mirrors 311a and 311b is 45 degrees with respect to the upper surface of the base 313 of the intermediate stage 31, the dotted line of the coaxial illumination light reflected by the mirror 311a A part of the light shown by does not hit the side surface DSa of the die D, passes through the periphery of the die D, and hits the reflective surface of the mirror 311b on the opposite side from the horizontal direction. A portion of the light that did not hit the side surface DSa of the die D is reflected again at 45 degrees on the reflective surface of the mirror 311b and heads toward the stage recognition camera 34. Note that the upper surface of the base 313 is a surface perpendicular to the optical axis of the stage recognition camera 34.

A part of the light that does not hit the side surface DSa of the die D becomes wraparound light (transmitted light or backlighting) that brightens the surroundings when observing the side surface DSb opposite to the side surface DSa. When a sufficient amount of light acts as wrap-around light to clearly photograph the surface (side surface) of die D, the brightness of the wrap-around light is The light becomes brighter according to the reciprocal multiple of its reflectance. Therefore, basically the amount of light becomes excessive.

When photographing in this state, as shown in FIG. 6, light wraps around the outline of the die D, causing the outline to blur. The side surface inspection of the die D is performed to inspect for scratches and foreign objects on the side surface, but also for the purpose of inspecting chipping that occurs during dicing. Due to the process of chipping, chipping mainly occurs on the contours of the side surfaces of the die. At this time, if the wraparound light causes blurring of the outline, it becomes difficult to detect fine chipping. For example, there is chipping within circle C shown in FIG. 6, but it is not easy to recognize. When chipping is originally detected using coaxial illumination, it is desirable that even the outline of the side surface of the die D can be seen with uniform brightness, as shown in FIG. In this state, the chipping, which is a concave portion within the circle C, can be photographed as a dark portion.

The configuration of the intermediate stage in the embodiment will be described using FIGS. 8 and 9. FIG. 8 is a diagram illustrating an intermediate stage in one aspect of the embodiment. FIG. 9 is a diagram showing an intermediate stage in another aspect of the embodiment.

As shown in FIG. 8, in the intermediate stage 31 in the embodiment, the inclination (θ) of the reflective surface of the mirror 311 is set to a predetermined angle (θp). That is, the inclination (θ) of the reflecting surface is slightly shifted from 45 degrees (°) (for example, θp=45°−Δ). Here, Δ is called a displacement angle. As a result, the reflected light that is reflected twice by the mirror 311 and directed toward the stage recognition camera 34 has an inclination that is four times the displacement angle (Δ) of the mirror 311 with respect to 45 degrees, and is not reflected by the stage recognition camera 34. It disappears. Note that the inclination of the reflective surface of the mirror 311 with respect to the optical axis is (90°-θ). Therefore, the predetermined angle with respect to the optical axis is (45°+Δ).

Note that the inclination of the reflective surface of the mirror 311 only needs to be shifted from 45 degrees, so as shown in FIG. 9, it may be shifted to the opposite side to that in FIG. 8 (θp=45°+δ). Alternatively, the angle may be such that even if the image of the opposing mirror is reflected, the light emitting surface of the coaxial illumination beyond it cannot be seen.

A captured image when the inclination (θ) of the reflective surface is reduced from 45 degrees as shown in FIG. 8 will be described with reference to FIG. 10. FIG. 10 is a photographic image of the die at three different angles of the reflective surfaces of the mirrors. In FIG. 10, a case is shown in which only a pair of mirrors 311a and 311b facing each other are provided as the mirrors 311. The top surface of die D, two side surfaces DSa and DSb of die D, and two side surfaces of pedestal 312 are shown.

When the inclination (θ) of the reflective surfaces of the mirrors 311a and 311b is 45 degrees (θ=45°), the opposing mirrors 311a and 311b appear white except for the portion hidden by the die D.

If the inclination (θ) of the reflective surfaces of the mirrors 311a and 311b is from 45 degrees to a smaller angle than the appropriate angle (for example, θ = 45° - Δ/2), the area above the die D and the area hidden by the die D will be removed. Mirrors 311a and 311b facing each other appear white.

When the inclination (θ) of the reflective surfaces of the mirrors 311a and 311b is appropriately tilted from 45 degrees (θ=45°−Δ=θp), the side surface of the die D is captured, but the opposing mirrors 311a and 311b are not captured ( (appears black).

In this way, when the inclination of the reflective surface of the mirror 311 is reduced, the opposing mirror is no longer visible. Note that in this state, the die D is photographed obliquely, so that the bottom surface of the die D is slightly visible.

The inter-mirror distance is larger than the distance between the mirror 311a and the mirror 311b facing it, the distance between the mirrors, and the distance between the mirrors 311a and 311b and the side surface of the die D facing it, the distance between the mirror and the side surface. Therefore, by gradually reducing the inclination of the reflective surface of the mirror 311, it is possible to make the opposing mirror invisible while keeping the side surface of the die D visible. That is, the predetermined angle (θp) is an angle at which the side surface of the die D can be photographed, and at which light passing around the die D does not reach the stage recognition camera 34. The inclination of the reflective surface of the mirror 311 is a means for suppressing wraparound light.

According to embodiments, one or more of the following effects may be achieved.

(1) It is possible to reduce the blurring that occurs on the die side contour in the image due to the wraparound light around the die.

(2) It is possible to stabilize and increase the accuracy of detecting chipping on the die side surface.

(3) It is possible to improve the accuracy and yield of products assembled by the die bonder.

<Modified example>
Hereinafter, some typical modifications of the embodiment will be illustrated. In the following description of the modified example, the same reference numerals as in the above-described embodiment may be used for parts having the same configuration and function as those described in the above-described embodiment. As for the explanation of such portions, the explanation in the above-mentioned embodiments may be used as appropriate to the extent that there is no technical contradiction. Moreover, some of the above-described embodiments and all or part of the plurality of modified examples may be applied in combination as appropriate within a technically consistent range.

(First variation)
The intermediate stage 31 in the first modification will be explained using FIGS. 11 to 13. FIG. 11 is a diagram showing the configuration of the intermediate stage and the optical path of transmitted light in the first modification. FIG. 12 is a top view of the intermediate stage shown in FIG. 11. FIG. 13 is a diagram showing the optical path of reflected light on the intermediate stage shown in FIG. 11.

As shown in FIG. 11, the intermediate stage 31 in the first modified example further includes polarizing filters 314a to 314d compared to the intermediate stage 31 in the embodiment. Polarizing filters 314a to 314d are provided horizontally above mirrors 311a to 311d, respectively. Polarizing filters 314a to 314d may be collectively referred to as polarizing filter 314. The polarizing filters 314 facing each other have polarization directions different by 90°. It is preferable to use a non-polarized mirror 311.

As shown in FIG. 11, since the polarization directions of the polarization filter 314a and the polarization filter 314b differ by 90 degrees, the transmitted light that has passed through the polarization filter 314a, mirror 311a, and mirror 311b cannot pass through the polarization filter 314b. Similarly, the transmitted light that has passed through the polarizing filter 314b, mirror 311b, and mirror 311a cannot pass through the polarizing filter 314a. That is, the illumination light cannot pass through both the polarizing filter 314a and the polarizing filter 314b. This makes it possible to prevent blurring of the die side contour in the image due to the wraparound light around the die D. The polarizing filter 314 is means for suppressing wraparound light.

Note that, as shown in FIG. 13, the reflected light that passes through the polarizing filter 314a and the mirror 311a and is reflected on the right side surface of the die D can pass through the polarizing filter 314a via the mirror 311a. Similarly, the reflected light that passes through the polarizing filter 314b and the mirror 311b and is reflected on the left side surface of the die D can pass through the polarizing filter 314b via the mirror 311b.

Note that the mirror 311 is preferably configured with a prism. This makes it easier to install the polarizing filter 314.

(Second modification)
The illumination device 35 in the second modification will be described using FIGS. 14 to 16. FIG. 14 is a diagram showing a stage recognition camera, a lighting device, and an intermediate stage in a second modification. FIG. 15 is a diagram illustrating an irradiation area of the surface emitting illumination shown in FIG. 14. FIG. 16 is a diagram showing a region irradiated with illumination light of the surface emitting illumination shown in FIG. 15.

The intermediate stage 31 in the second modification has the same configuration as the intermediate stage in the comparative example shown in FIG. The stage recognition camera 34 in the second modification has the same configuration as the stage recognition camera 34 in the embodiment. The lighting device 35 in the second modification has the same configuration as the lighting device 35 in the embodiment except that it includes a light shielding plate.

The irradiation area of the surface emitting illumination 351 is divided for each side of the die D to be photographed. For example, as shown in FIG. 15, the surface emitting illumination 351 is divided into four parts in a "field" shape, and the die D is irradiated with illumination light only from two adjacent irradiation areas among the four areas 351a to 351d. Ru. Then, as shown in FIG. 16, the area to which the illumination light is irradiated is switched among the areas 351a to 351d.

Among the regions 351a to 351d, the region to which illumination light is irradiated is switched by providing a light shielding plate 353 on the half mirror 352 side of the surface emitting illumination 351 and moving the light shielding plate 353. The light shielding plate 353 is an irradiation suppressing means. Note that the surface emitting illumination 351 may be configured with LEDs arranged in an array, and the irradiation area may be switched by turning on/off the LEDs, or the surface emitting illumination 351 may be configured with a liquid crystal or organic EL (Electro Luminescence) display device. The irradiation area may be switched by turning on/off the light. The unlit area of the surface emitting illumination 351 is the irradiation suppressing means.

When photographing the side surface of die D facing mirror 311a, illumination light is irradiated from regions 351a and 351d, as shown in UPR of FIG.

When photographing the side surface of die D facing mirror 311b, illumination light is irradiated from regions 351b and 351c, as shown in LWR in FIG. 16.

When photographing the side surface of die D facing mirror 311c, illumination light is irradiated from regions 351c and 351d, as shown in the LFT of FIG. 16.

When photographing the side surface of the die D facing the mirror 311d, illumination light is irradiated from the regions 351a and 351b, as shown by RGT in FIG. 16.

Therefore, the four sides of die D are photographed four times. Note that when photographing the top surface of the die D, illumination light is irradiated from all regions 351a to 351d.

(Third variation)
In the second modification, an example has been described in which the irradiation area of the surface emitting illumination 351 is equally divided into four, but the areas 351a to 351d do not need to be divided evenly as long as there is a necessary area.

A lighting device 35 in a third modification will be described using FIG. 17. FIG. 17 is a diagram illustrating the irradiation area of surface emitting illumination in the third modification. FIG. 18 is a diagram showing a region irradiated with illumination light of the surface emitting illumination shown in FIG. 17.

The lighting device 35 in the third modification has the same configuration as the lighting device 35 in the embodiment except for the surface emitting lighting 351.

The irradiation area of the surface emitting illumination 351 is divided for each side of the die D to be photographed. For example, as shown in FIG. 17, the surface emitting illumination 351 is divided into four regions corresponding to the mirrors 311a to 311d, and the regions 351e to 351h irradiate illumination light to the mirrors 311a to 311d, respectively. Then, as shown in FIG. 18, the area to which the illumination light is irradiated is switched among the areas 351e to 351h. Note that the regions 351e and 351f are not irradiated with illumination light when photographing from the side, but are irradiated with illumination light when photographing from the top.

When photographing the side surface of the die D facing the mirror 311a, illumination light is irradiated from the region 351e, as shown in UPR of FIG. 18.

When photographing the side surface of the die D facing the mirror 311b, illumination light is irradiated from the region 351f, as shown by LWR in FIG. 18.

When photographing the side surface of the die D facing the mirror 311c, illumination light is irradiated from the region 351g, as shown in the LFT of FIG. 18.

When photographing the side surface of the die D facing the mirror 311d, illumination light is irradiated from the region 351h, as shown by RGT in FIG. 18.

Therefore, the four sides of die D are photographed four times. Note that when photographing the top surface of the die D, illumination light is irradiated from all regions 351e to 351h.

Although the disclosure made by the present discloser has been specifically explained based on the embodiments and modified examples, the present disclosure is not limited to the above embodiments and modified examples, and it is possible to make various changes. Not even.

For example, in the embodiment, an example has been described in which a mirror is provided on an intermediate stage and a die is placed between the mirrors, but a stage such as an intermediate stage is not necessarily required. The mirror may be provided at a position facing the side surface of the die. For example, a mirror may be fixed with a support or the like, and a die fixed by a collet of a pickup head or a bond head may be conveyed between the mirrors to perform side inspection.

In the embodiment, a die bonder is described in which a pickup head picks up a die from a die supply unit and places it on an intermediate stage, and a bonding head picks up the die placed on the intermediate stage and bonds it to a substrate. Alternatively, the die in the die supply section may be picked up by a bonding head and placed on an intermediate stage, and the die placed on the intermediate stage may be picked up by the bonding head and bonded to the substrate.

In the embodiment, the DAF is attached to the back surface of the wafer, but the DAF may not be provided.

In the embodiment, bonding is performed with the front surface of the die facing up, but after the die is picked up, the die may be turned over and bonding may be performed with the back surface of the die facing up. This device is called a flip chip bonder.

In the embodiment, an example has been described in which dies are picked up from a wafer in the die supply unit, but dies may also be picked up from a tray.

Although the embodiment has been described using a die bonder as an example, the present invention can also be applied to a chip mounter (surface mounter) that places electronic components or semiconductor chips on a wiring board.

1...Die bonder (mounting device)
311...Mirror 34...Stage recognition camera (imaging device)
35...Lighting device D...Die

Claims (12)

at least one pair of mirrors are installed to face each other;
an imaging device provided such that the die and the reflective surface of the mirror are located within a field of view;
an illumination device that irradiates illumination light along the optical axis of the imaging device;
Wrap-around light prevention means for preventing light that passes around the die from reaching the imaging device among the light reflected by one of the reflective surfaces of the pair of mirrors;
A mounting device comprising: The mounting device according to claim 1,
The wraparound light suppression means is the pair of mirrors, the reflecting surfaces of which are installed at a predetermined angle greater than 45 degrees with respect to the optical axis of the imaging device;
In the mounting device, the predetermined angle is an angle at which a side surface of the die can be photographed, but an angle at which light passing around the die does not reach the imaging device. The mounting device according to claim 1,
The wraparound light suppressing means is the pair of mirrors, the reflecting surfaces of which are installed at a predetermined angle of less than 45 degrees with respect to the optical axis of the imaging device;
In the mounting device, the predetermined angle is an angle at which a side surface of the die can be photographed, but an angle at which light passing around the die does not reach the imaging device. The mounting device according to claim 1,
The wraparound light suppressing means is a first polarizing filter provided on one of the pair of mirrors and a second polarizing filter provided on the other of the pair of mirrors,
A mounting device in which the polarization direction of the first polarization filter is different from the polarization direction of the second polarization filter by 90 degrees. The mounting device according to claim 1,
Furthermore, it is equipped with a stage,
the pair of mirrors are installed on the top surface of the stage,
The imaging device is provided above the stage,
The stage is a mounting device having the wraparound light suppressing means. at least one pair of mirrors are installed to face each other;
an imaging device provided such that the die and the reflective surface of the mirror are located within a field of view;
an illumination device that irradiates illumination light along the optical axis of the imaging device;
Equipped with
The lighting device is a mounting device having an irradiation suppressing means for suppressing light irradiated onto one reflective surface of the pair of mirrors. The mounting apparatus according to claim 6,
The lighting device includes surface-emitting lighting,
The irradiation suppressing means divides the irradiation area of the surface emitting illumination into a plurality of parts, irradiates one side surface of the die from one irradiation area among the plurality of irradiation areas of the surface emitting illumination, and irradiates the other side surface of the die. A mounting device configured to not irradiate other sides of the die from the area. The mounting device according to claim 7,
The mounting device is configured such that the irradiation suppressing means is a light shielding plate, and the irradiation area of the surface emitting illumination is switched by moving the light shielding plate. The mounting device according to claim 7,
The mounting device is configured such that the irradiation suppressing means is an extinguished area of the surface emitting illumination, and the irradiation area is switched by changing the on area and the extinguished area of the surface emitting illumination. The mounting apparatus according to claim 6,
Furthermore, it is equipped with a stage,
the pair of mirrors are installed on the top surface of the stage,
The imaging device is provided above the stage,
The stage is a mounting device having the irradiation suppressing means. at least one pair of mirrors are installed to face each other, an imaging device is provided such that the die and the reflective surface of the mirror are located within the field of view, and an illumination device that irradiates illumination light along the optical axis of the imaging device The wafer is carried into a mounting apparatus comprising: and a wrap-around light suppressing means for preventing light passing around the die from reaching the imaging device among the light reflected by one of the reflective surfaces of the pair of mirrors. The process of
a step of photographing a side surface of the die with the imaging device;
A method for manufacturing a semiconductor device having the following. At least one pair of mirrors are installed to face each other, an imaging device is provided such that the die and the reflective surface of the mirror are located within the field of view, and an illumination device that irradiates illumination light along the optical axis of the imaging device. and a step of carrying the wafer into a mounting apparatus in which the illumination device has an irradiation suppressing means for suppressing light irradiated onto one of the reflective surfaces of the pair of mirrors;
a step of photographing a side surface of the die with the imaging device;
A method for manufacturing a semiconductor device having the following.

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