JP2023008032A - Conjugated polymer, film-forming composition, organic thin film, and organic semiconductor element - Google Patents
Conjugated polymer, film-forming composition, organic thin film, and organic semiconductor element Download PDFInfo
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- JP2023008032A JP2023008032A JP2021111260A JP2021111260A JP2023008032A JP 2023008032 A JP2023008032 A JP 2023008032A JP 2021111260 A JP2021111260 A JP 2021111260A JP 2021111260 A JP2021111260 A JP 2021111260A JP 2023008032 A JP2023008032 A JP 2023008032A
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- thin film
- organic thin
- conjugated polymer
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- 239000000203 mixture Substances 0.000 title claims abstract description 61
- 239000010409 thin film Substances 0.000 title claims abstract description 47
- 229920000547 conjugated polymer Polymers 0.000 title claims abstract description 36
- 239000004065 semiconductor Substances 0.000 title claims abstract description 12
- 229920000642 polymer Polymers 0.000 claims abstract description 7
- 125000004432 carbon atom Chemical group C* 0.000 claims description 17
- 125000000217 alkyl group Chemical group 0.000 claims description 13
- 125000003545 alkoxy group Chemical group 0.000 claims description 9
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 6
- 239000002904 solvent Substances 0.000 abstract description 29
- FNQJDLTXOVEEFB-UHFFFAOYSA-N 1,2,3-benzothiadiazole Chemical compound C1=CC=C2SN=NC2=C1 FNQJDLTXOVEEFB-UHFFFAOYSA-N 0.000 abstract description 4
- FCEHBMOGCRZNNI-UHFFFAOYSA-N 1-benzothiophene Chemical compound C1=CC=C2SC=CC2=C1 FCEHBMOGCRZNNI-UHFFFAOYSA-N 0.000 abstract description 4
- 239000005964 Acibenzolar-S-methyl Substances 0.000 abstract description 3
- PDQRQJVPEFGVRK-UHFFFAOYSA-N 2,1,3-benzothiadiazole Chemical compound C1=CC=CC2=NSN=C21 PDQRQJVPEFGVRK-UHFFFAOYSA-N 0.000 abstract description 2
- -1 hentriacontyl group Chemical group 0.000 description 119
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 99
- 239000007787 solid Substances 0.000 description 40
- CXWXQJXEFPUFDZ-UHFFFAOYSA-N tetralin Chemical compound C1=CC=C2CCCCC2=C1 CXWXQJXEFPUFDZ-UHFFFAOYSA-N 0.000 description 27
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 24
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 24
- RFFLAFLAYFXFSW-UHFFFAOYSA-N 1,2-dichlorobenzene Chemical compound ClC1=CC=CC=C1Cl RFFLAFLAYFXFSW-UHFFFAOYSA-N 0.000 description 20
- 239000012044 organic layer Substances 0.000 description 20
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 18
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 18
- 239000010410 layer Substances 0.000 description 17
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 16
- PBKONEOXTCPAFI-UHFFFAOYSA-N 1,2,4-trichlorobenzene Chemical compound ClC1=CC=C(Cl)C(Cl)=C1 PBKONEOXTCPAFI-UHFFFAOYSA-N 0.000 description 14
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 14
- 239000011259 mixed solution Substances 0.000 description 14
- COIOYMYWGDAQPM-UHFFFAOYSA-N tris(2-methylphenyl)phosphane Chemical compound CC1=CC=CC=C1P(C=1C(=CC=CC=1)C)C1=CC=CC=C1C COIOYMYWGDAQPM-UHFFFAOYSA-N 0.000 description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 13
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 12
- IOEJYZSZYUROLN-UHFFFAOYSA-M Sodium diethyldithiocarbamate Chemical compound [Na+].CCN(CC)C([S-])=S IOEJYZSZYUROLN-UHFFFAOYSA-M 0.000 description 10
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 10
- 239000007864 aqueous solution Substances 0.000 description 10
- 238000005259 measurement Methods 0.000 description 10
- NROKBHXJSPEDAR-UHFFFAOYSA-M potassium fluoride Chemical compound [F-].[K+] NROKBHXJSPEDAR-UHFFFAOYSA-M 0.000 description 10
- 239000000243 solution Substances 0.000 description 10
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 9
- 229910052786 argon Inorganic materials 0.000 description 9
- 239000010408 film Substances 0.000 description 9
- 238000000944 Soxhlet extraction Methods 0.000 description 8
- 239000000178 monomer Substances 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- LNAMMBFJMYMQTO-FNEBRGMMSA-N chloroform;(1e,4e)-1,5-diphenylpenta-1,4-dien-3-one;palladium Chemical compound [Pd].[Pd].ClC(Cl)Cl.C=1C=CC=CC=1\C=C\C(=O)\C=C\C1=CC=CC=C1.C=1C=CC=CC=1\C=C\C(=O)\C=C\C1=CC=CC=C1.C=1C=CC=CC=1\C=C\C(=O)\C=C\C1=CC=CC=C1 LNAMMBFJMYMQTO-FNEBRGMMSA-N 0.000 description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 7
- 229910052737 gold Inorganic materials 0.000 description 7
- 239000010931 gold Substances 0.000 description 7
- VRBFTYUMFJWSJY-UHFFFAOYSA-N 28804-46-8 Chemical compound ClC1CC(C=C2)=CC=C2C(Cl)CC2=CC=C1C=C2 VRBFTYUMFJWSJY-UHFFFAOYSA-N 0.000 description 6
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 6
- 239000004793 Polystyrene Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 229920002223 polystyrene Polymers 0.000 description 6
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 125000004122 cyclic group Chemical group 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000011698 potassium fluoride Substances 0.000 description 5
- 235000003270 potassium fluoride Nutrition 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 230000007704 transition Effects 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 125000002704 decyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 125000000755 henicosyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 4
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 4
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 4
- 125000001196 nonadecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 4
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 4
- 229920000052 poly(p-xylylene) Polymers 0.000 description 4
- VJYJJHQEVLEOFL-UHFFFAOYSA-N thieno[3,2-b]thiophene Chemical group S1C=CC2=C1C=CS2 VJYJJHQEVLEOFL-UHFFFAOYSA-N 0.000 description 4
- TUCRZHGAIRVWTI-UHFFFAOYSA-N 2-bromothiophene Chemical compound BrC1=CC=CS1 TUCRZHGAIRVWTI-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 125000001204 arachidyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 3
- 239000011230 binding agent Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 125000003707 hexyloxy group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])O* 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 125000005447 octyloxy group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])O* 0.000 description 3
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 3
- 239000004926 polymethyl methacrylate Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- RMVRSNDYEFQCLF-UHFFFAOYSA-N thiophenol Chemical compound SC1=CC=CC=C1 RMVRSNDYEFQCLF-UHFFFAOYSA-N 0.000 description 3
- UKTDFYOZPFNQOQ-UHFFFAOYSA-N tributyl(thiophen-2-yl)stannane Chemical compound CCCC[Sn](CCCC)(CCCC)C1=CC=CS1 UKTDFYOZPFNQOQ-UHFFFAOYSA-N 0.000 description 3
- AVQQQNCBBIEMEU-UHFFFAOYSA-N 1,1,3,3-tetramethylurea Chemical compound CN(C)C(=O)N(C)C AVQQQNCBBIEMEU-UHFFFAOYSA-N 0.000 description 2
- KBPLFHHGFOOTCA-UHFFFAOYSA-N 1-Octanol Chemical compound CCCCCCCCO KBPLFHHGFOOTCA-UHFFFAOYSA-N 0.000 description 2
- QNBPEQCRDXBBCR-UHFFFAOYSA-N 4,7-bis(5-bromothiophen-2-yl)-5,6-dioctoxy-2,1,3-benzothiadiazole Chemical compound C12=NSN=C2C(C=2SC(Br)=CC=2)=C(OCCCCCCCC)C(OCCCCCCCC)=C1C1=CC=C(Br)S1 QNBPEQCRDXBBCR-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229920002284 Cellulose triacetate Polymers 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 2
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 2
- 229920002319 Poly(methyl acrylate) Polymers 0.000 description 2
- 229920001665 Poly-4-vinylphenol Polymers 0.000 description 2
- 239000004695 Polyether sulfone Substances 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 239000004734 Polyphenylene sulfide Substances 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- NNLVGZFZQQXQNW-ADJNRHBOSA-N [(2r,3r,4s,5r,6s)-4,5-diacetyloxy-3-[(2s,3r,4s,5r,6r)-3,4,5-triacetyloxy-6-(acetyloxymethyl)oxan-2-yl]oxy-6-[(2r,3r,4s,5r,6s)-4,5,6-triacetyloxy-2-(acetyloxymethyl)oxan-3-yl]oxyoxan-2-yl]methyl acetate Chemical compound O([C@@H]1O[C@@H]([C@H]([C@H](OC(C)=O)[C@H]1OC(C)=O)O[C@H]1[C@@H]([C@@H](OC(C)=O)[C@H](OC(C)=O)[C@@H](COC(C)=O)O1)OC(C)=O)COC(=O)C)[C@@H]1[C@@H](COC(C)=O)O[C@@H](OC(C)=O)[C@H](OC(C)=O)[C@H]1OC(C)=O NNLVGZFZQQXQNW-ADJNRHBOSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 238000011088 calibration curve Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 125000001511 cyclopentyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 2
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 2
- 125000006612 decyloxy group Chemical group 0.000 description 2
- NQKXFODBPINZFK-UHFFFAOYSA-N dioxotantalum Chemical compound O=[Ta]=O NQKXFODBPINZFK-UHFFFAOYSA-N 0.000 description 2
- SNRUBQQJIBEYMU-UHFFFAOYSA-N dodecane Chemical compound CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 description 2
- 239000003759 ester based solvent Substances 0.000 description 2
- FKRCODPIKNYEAC-UHFFFAOYSA-N ethyl propionate Chemical compound CCOC(=O)CC FKRCODPIKNYEAC-UHFFFAOYSA-N 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 125000005446 heptyloxy group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])O* 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- AUHZEENZYGFFBQ-UHFFFAOYSA-N mesitylene Substances CC1=CC(C)=CC(C)=C1 AUHZEENZYGFFBQ-UHFFFAOYSA-N 0.000 description 2
- 125000001827 mesitylenyl group Chemical group [H]C1=C(C(*)=C(C([H])=C1C([H])([H])[H])C([H])([H])[H])C([H])([H])[H] 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 125000006611 nonyloxy group Chemical group 0.000 description 2
- FTMKAMVLFVRZQX-UHFFFAOYSA-N octadecylphosphonic acid Chemical compound CCCCCCCCCCCCCCCCCCP(O)(O)=O FTMKAMVLFVRZQX-UHFFFAOYSA-N 0.000 description 2
- NJGCRMAPOWGWMW-UHFFFAOYSA-N octylphosphonic acid Chemical compound CCCCCCCCP(O)(O)=O NJGCRMAPOWGWMW-UHFFFAOYSA-N 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- 125000004115 pentoxy group Chemical group [*]OC([H])([H])C([H])([H])C([H])([H])C(C([H])([H])[H])([H])[H] 0.000 description 2
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 2
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920006393 polyether sulfone Polymers 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 239000011112 polyethylene naphthalate Substances 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
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- 229920000098 polyolefin Polymers 0.000 description 2
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- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- FMYXZXAKZWIOHO-UHFFFAOYSA-N trichloro(2-phenylethyl)silane Chemical compound Cl[Si](Cl)(Cl)CCC1=CC=CC=C1 FMYXZXAKZWIOHO-UHFFFAOYSA-N 0.000 description 2
- PYJJCSYBSYXGQQ-UHFFFAOYSA-N trichloro(octadecyl)silane Chemical compound CCCCCCCCCCCCCCCCCC[Si](Cl)(Cl)Cl PYJJCSYBSYXGQQ-UHFFFAOYSA-N 0.000 description 2
- RCHUVCPBWWSUMC-UHFFFAOYSA-N trichloro(octyl)silane Chemical compound CCCCCCCC[Si](Cl)(Cl)Cl RCHUVCPBWWSUMC-UHFFFAOYSA-N 0.000 description 2
- 125000002948 undecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 239000008096 xylene Substances 0.000 description 2
- WSLDOOZREJYCGB-UHFFFAOYSA-N 1,2-Dichloroethane Chemical compound ClCCCl WSLDOOZREJYCGB-UHFFFAOYSA-N 0.000 description 1
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Abstract
Description
本発明は、チエノチオフェン骨格を含んだオリゴヘテロアセンとベンゾチアジアゾール骨格を構造単位として含む共役系高分子とその製造方法、ならびに有機半導体素子に関する。 The present invention relates to a conjugated polymer containing an oligoheteroacene containing a thienothiophene skeleton and a benzothiadiazole skeleton as structural units, a method for producing the same, and an organic semiconductor device.
共役系化合物は、有機薄膜太陽電池、有機薄膜トランジスタ、並びに有機EL等に有機半導体として用いられ、省エネルギー、低コスト、溶媒可溶性、軽量、フレキシブル等の無機半導体に無い特徴を有し、プリンテッドエレクトロニクスへと応用される塗布材料としても用いることができる(特許文献1)。 Conjugated compounds are used as organic semiconductors in organic thin-film solar cells, organic thin-film transistors, organic EL, etc., and have characteristics not found in inorganic semiconductors, such as energy saving, low cost, solvent solubility, light weight, and flexibility. It can also be used as a coating material applied to (Patent Document 1).
非特許文献1に開示されるペンタセン等のオリゴアセンや、非特許文献2に開示されるチオフェン骨格やチエノチオフェン骨格等を有するオリゴアセン(「以下、オリゴヘテロアセンという。」)等の共役系化合物は有機薄膜トランジスタへの応用研究がなされている。中でもチエノチオフェン骨格を有するオリゴヘテロアセンは高いキャリア移動度を示す傾向にあるが、低溶媒溶解性、低成膜性、並びに低大気安定性等の問題点が指摘されており(非特許文献3)、新しい共役系化合物の開発が求められている。特許文献2に開示されるチエノチオフェン骨格を有するオリゴヘテロアセンを含む高分子は本発明の共役系高分子と類するものであるが、5,6-ジアルコキシベンゾチアジアゾール骨格をアクセプターユニットとして含むことを特徴とする本願記載の共役系高分子に関する記述はない。
Conjugated compounds such as oligoacenes such as pentacene disclosed in Non-Patent
本発明は、高キャリア移動度、高耐熱性、及び高溶媒溶解性を併せ持つ新しい共役系高分子、該高分子を含む成膜用組成物、該成膜用組成物から作成される有機薄膜、該有機薄膜を活性層とする半導体素子及び有機薄膜トランジスタ素子を提供することである。 The present invention provides a new conjugated polymer having high carrier mobility, high heat resistance, and high solvent solubility, a film-forming composition containing the polymer, an organic thin film prepared from the film-forming composition, An object of the present invention is to provide a semiconductor device and an organic thin film transistor device having the organic thin film as an active layer.
上記課題を解決するために、本発明者は鋭意検討を行った結果、7,14-二置換ビスチエノ[2’ ’,3’:4,5]チエノ[3,2-g:3’,2’-g’]ベンゾ[1’ ’,2’ ’:4,5:4’ ’,3’ ’;4’,5’]ジチエノ[3,2-b:3’,2’-b’]ビス[1]ベンゾチオフェンと、5,6-ジアルコキシ-1,4-ビス(2-チエニル)ベンゾチアジアゾールとを構造単位として含む共役系高分子が、高溶媒溶解性、高耐熱性、及び高い成膜性を示すことを見出した。さらに、該共役高分子を含む成膜用組成物を用いて簡便に有機薄膜が成膜できること、並びに該有機薄膜を用いて作成した有機薄膜トランジスタ素子が安定に駆動することも合わせて見出し、本発明の完成に至った。 In order to solve the above problems, the present inventors conducted extensive studies and found that 7,14-disubstituted bisthieno[2″,3′:4,5]thieno[3,2-g:3′,2 '-g']benzo[1'',2'':4,5:4'',3'';4',5']dithieno[3,2-b:3',2'-b'] A conjugated polymer containing bis[1]benzothiophene and 5,6-dialkoxy-1,4-bis(2-thienyl)benzothiadiazole as structural units has high solvent solubility, high heat resistance, and high It was found to exhibit film forming properties. Furthermore, they also found that an organic thin film can be easily formed using a film-forming composition containing the conjugated polymer, and that an organic thin film transistor element prepared using the organic thin film can be stably driven. was completed.
すなわち本発明は以下の要旨から構成される。
[要旨1]
下記一般式(1)
That is, the present invention consists of the following gists.
[Summary 1]
General formula (1) below
(式中、R1は炭素数1から50のアルキル基を表す。複数のR1は同一又は相異なっていてもよい。)
で表される構造単位と
下記一般式(2)
(In the formula, R 1 represents an alkyl group having 1 to 50 carbon atoms. A plurality of R 1 may be the same or different.)
A structural unit represented by the following general formula (2)
(式中、R2は水素原子、炭素数1から50のアルキル基を表す。複数のR2は同一又は相異なっていても良い。R3は炭素数1から50のアルコキシ基を表す。複数のR3は同一又は相異なっていても良い。)
で表される2価の複素芳香族環連結基より構成される共役系高分子。
[要旨2]
要旨1に記載の共役系高分子を含んで成る成膜用組成物。
[要旨3]
要旨2に記載の成膜用組成物を用いて作成することを特徴とする有機薄膜。
[要旨4]
要旨3に記載の有機薄膜を含む有機半導体素子。
[要旨5]
要旨4に記載の有機薄膜を含む有機薄膜トランジスタ素子。
(In the formula, R 2 represents a hydrogen atom or an alkyl group having 1 to 50 carbon atoms. A plurality of R 2 may be the same or different. R 3 represents an alkoxy group having 1 to 50 carbon atoms. of R 3 may be the same or different.)
A conjugated polymer composed of a divalent heteroaromatic ring connecting group represented by
[Summary 2]
A film-forming composition comprising the conjugated polymer according to
[Summary 3]
An organic thin film produced by using the film-forming composition according to
[Summary 4]
An organic semiconductor device comprising the organic thin film according to
[Summary 5]
An organic thin film transistor device comprising the organic thin film according to
本発明の共役系高分子は高い溶媒溶解性と耐熱性を併せ持つ有機半導体であり、これを活性層とする有機薄膜トランジスタ素子を効率よく駆動させることができる。 The conjugated polymer of the present invention is an organic semiconductor having both high solvent solubility and heat resistance, and can efficiently drive an organic thin film transistor element having this as an active layer.
以下、本発明を詳細に説明する。 The present invention will be described in detail below.
R1、及びR2で表される炭素数1から50のアルキル基としては、直鎖状、分岐状又は環状のいずれであってもよく、メチル基、エチル基、プロピル基、ブチル基、ペンチル基、ヘキシル基、ヘプチル基、オクチル基、ノニル基、デシル基、ウンデシル基、ドデシル基、トリデシル基、テトラデシル基、ペンタデシル基、ヘキサデシル基、ヘプタデシル基、オクタデシル基、ノナデシル基、イコシル基、ヘンイコシル基、ドコシル基、トリコシル基、テトラコシル基、ペンタコシル基、ヘキサコシル基、ヘプタコシル基、オクタコシル基、ノナコシル基、トリアコンチル基、ヘントリアコンチル基、ドドリアコンチル基、トリトリアコンチル基、テトラトリアコンチル基、ペンタトリアコンチル基、ヘキサトリアコンチル基、テトラコンチル基、ヘンテトラコンチル基、ドテトラコンチル基、トリテトラコンチル基、テトラテトラコンチル基、ペンタコンチル基等の直鎖アルキル基、イソプロピル基、イソブチル基、sec-ブチル基、tert-ブチル基、2-エチルヘキシル基、3,7-ジメチルオクチル基、2-ヘキシルオクチル基、2-ヘキシルデシル基、2-オクチルドデシル基、2-デシルテトラデシル基、2-ドデシルテトラデシル基、2-ドデシルヘキサデシル基、2-テトラデシルヘキサデシル基、3-デシルペンタデシル基、3-ドデシルヘプタデシル基、3-テトラデシルノナコシル基、4-デシルヘキサデシル基、4-ドデシルオクタデシル基、4-テトラデシルイコシル基、等の分岐アルキル基、シクロペンチル基、シクロヘキシル基等の環状アルキル基を例示することができる。 The alkyl group having 1 to 50 carbon atoms represented by R 1 and R 2 may be linear, branched or cyclic, and may be a methyl group, an ethyl group, a propyl group, a butyl group or a pentyl group. group, hexyl group, heptyl group, octyl group, nonyl group, decyl group, undecyl group, dodecyl group, tridecyl group, tetradecyl group, pentadecyl group, hexadecyl group, heptadecyl group, octadecyl group, nonadecyl group, icosyl group, henicosyl group, docosyl group, tricosyl group, tetracosyl group, pentacosyl group, hexacosyl group, heptacosyl group, octacosyl group, nonacosyl group, triacontyl group, hentriacontyl group, dodriacontyl group, tritriacontyl group, tetratriacontyl group, pentatria Contyl group, hexatriacontyl group, tetracontyl group, hentetracontyl group, dotetracontyl group, tritetracontyl group, tetratetracontyl group, linear alkyl group such as pentacontyl group, isopropyl group, isobutyl group, sec-butyl group, tert-butyl group, 2-ethylhexyl group, 3,7-dimethyloctyl group, 2-hexyloctyl group, 2-hexyldecyl group, 2-octyldodecyl group, 2-decyltetradecyl group, 2- dodecyltetradecyl group, 2-dodecylhexadecyl group, 2-tetradecylhexadecyl group, 3-decylpentadecyl group, 3-dodecylheptadecyl group, 3-tetradecylnonacosyl group, 4-decylhexadecyl group, 4 Examples include branched alkyl groups such as -dodecyloctadecyl group and 4-tetradecylicosyl group, and cyclic alkyl groups such as cyclopentyl group and cyclohexyl group.
R3で表される炭素数1から50のアルコキシ基としては、直鎖状、分岐状又は環状のいずれでもよく、メトキシ基、エトキシ基、プロポキシ基、ブトキシ基、ペンチルオキシ基、ヘキシルオキシ基、ヘプチルオキシ基、オクチルオキシ基、ノニルオキシ基、デシルオキシ基、ウンデシルオキシ基、ドデシルオキシ基、トリデシルオキシ基、テトラデシルオキシ基、ペンタデシルオキシ基、ヘキサデシルオキシ基、ヘプタデシルオキシ基、オクタデシルオキシ基、ノナデシルオキシ基、イコシルオキシ基、ヘンイコシルオキシ基、ドコシルオキシ基、トリコシルオキシ基、テトラコシルオキシ基、ペンタコシルオキシ基、ヘキサコシルオキシ基、ヘプタコシルオキシ基、オクタコシルオキシ基、ノナコシルオキシ基、トリアコンチルオキシ基、ヘントリアコンチルオキシ基、ドドリアコンチルオキシ基、トリトリアコンチルオキシ基、テトラトリアコンチルオキシ基、ペンタトリアコンチルオキシ基、ヘキサトリアコンチルオキシ基、テトラコンチルオキシ基、ヘンテトラコンチルオキシ基、ドテトラコンチルオキシ基、トリテトラコンチルオキシ基、テトラテトラコンチルオキシ基、ペンタコンチルオキシ基等の直鎖アルコシキ基、イソプロポキシ基、1-(2-メチルプロピル)オキシ基、2-ブチルオキシ基、tert-ブトキシ基、2-エチルヘキシルオキシ基、3,7-ジメチルオクチルオキシ基、2-デシルテトラデシルオキシ基、2-ドデシルテトラデシルオキシ基、2-ドデシルヘキサデシルオキシ基、2-テトラデシルヘキサデシルオキシ基等の分岐アルコキシ基、シクロペンチルオキシ基、シクロヘキシルオキシ基等の環状アルコキシ基を例示することができる。 The alkoxy group having 1 to 50 carbon atoms represented by R3 may be linear, branched or cyclic, and may be a methoxy group, an ethoxy group, a propoxy group, a butoxy group, a pentyloxy group, a hexyloxy group, heptyloxy group, octyloxy group, nonyloxy group, decyloxy group, undecyloxy group, dodecyloxy group, tridecyloxy group, tetradecyloxy group, pentadecyloxy group, hexadecyloxy group, heptadecyloxy group, octadecyloxy group group, nonadecyloxy group, icosyloxy group, henicosyloxy group, docosyloxy group, tricosyloxy group, tetracosyloxy group, pentacosyloxy group, hexacosyloxy group, heptacosyloxy group, octacosyloxy group group, nonacosyloxy group, triacontyloxy group, hentriacontyloxy group, dodriacontyloxy group, tritriacontyloxy group, tetratriacontyloxy group, pentatriacontyloxy group, hexatriacontyloxy group, straight-chain alkoxy groups such as tetracontyloxy group, hentetracontyloxy group, dotetracontyloxy group, tritetracontyloxy group, tetratetracontyloxy group, pentacontyloxy group, isopropoxy group, 1- (2-methylpropyl)oxy group, 2-butyloxy group, tert-butoxy group, 2-ethylhexyloxy group, 3,7-dimethyloctyloxy group, 2-decyltetradecyloxy group, 2-dodecyltetradecyloxy group, Examples include branched alkoxy groups such as 2-dodecylhexadecyloxy group and 2-tetradecylhexadecyloxy group, and cyclic alkoxy groups such as cyclopentyloxy group and cyclohexyloxy group.
R1で表される基として、本発明の一般式(1)と一般式(2)を含む共役系高分子(以下、「本発明の共役系高分子」という。)の溶解性、並びにキャリア移動度が高い点で、炭素数6から50のアルキル基が好ましく、炭素数6から34のアルキル基がより好ましく、ヘキシル基、オクチル基、デシル基、ウンデシル基、ノナデシル基、イコシル基、ヘンイコシル基、2-エチルヘキシル基、3,7-ジメチルオクチル基、2-ヘキシルオクチル基、2-ヘキシルデシル基、2-オクチルドデシル基、2-デシルテトラデシル基、2-ドデシルテトラデシル基、2-ドデシルヘキサデシル基、2-テトラデシルヘキサデシル基、3-デシルペンタデシル基、3-ドデシルヘプタデシル基、3-テトラデシルノナコシル基、4-デシルヘキサデシル基、4-ドデシルオクタデシル基、又は4-テトラデシルイコシル基がさらに好ましく、ノナデシル基、ヘンイコシル基、2-デシルテトラデシル基、2-デシルテトラデシル基、2-ドデシルヘキサデシル基、4-ドデシルオクタデシル基、2-テトラデシルヘキサデシル基がことさら好ましい。 As a group represented by R 1 , the solubility of the conjugated polymer containing the general formulas (1) and (2) of the present invention (hereinafter referred to as "the conjugated polymer of the present invention"), and the carrier An alkyl group having 6 to 50 carbon atoms is preferable, and an alkyl group having 6 to 34 carbon atoms is more preferable, from the viewpoint of high mobility, such as a hexyl group, an octyl group, a decyl group, an undecyl group, a nonadecyl group, an icosyl group, and a henicosyl group. , 2-ethylhexyl group, 3,7-dimethyloctyl group, 2-hexyloctyl group, 2-hexyldecyl group, 2-octyldodecyl group, 2-decyltetradecyl group, 2-dodecyltetradecyl group, 2-dodecylhexa Decyl group, 2-tetradecylhexadecyl group, 3-decylpentadecyl group, 3-dodecylheptadecyl group, 3-tetradecylnonacocyl group, 4-decylhexadecyl group, 4-dodecyloctadecyl group, or 4-tetra A decylicosyl group is more preferable, and a nonadecyl group, a henicosyl group, a 2-decyltetradecyl group, a 2-decyltetradecyl group, a 2-dodecylhexadecyl group, a 4-dodecyloctadecyl group and a 2-tetradecylhexadecyl group are particularly preferable. preferable.
R2で表される基として、本発明の共役系高分子の溶解性並びにキャリア移動度が高い点で、水素原子または炭素数4から50のアルキル基が好ましく、水素原子、炭素数4から34のアルキル基がより好ましく、水素原子、ブチル基、ペンチル基、ヘキシル基、オクチル基、デシル基、ノナデシル基、イコシル基、ヘンイコシル基、2-デシルテトラデシル基、2-ドデシルヘキサデシル基、2-テトラデシルヘキサデシル基、2-デシルテトラデシルオキシ基、2-ドデシルテトラデシルオキシ基、2-ドデシルヘキサデシルオキシ基又は2-テトラデシルヘキサデシルオキシ基がさらに好ましく、水素原子、ヘキシル基、オクチル基、デシル基、2-デシルテトラデシル基又は2-デシルテトラデシル基がことさらに好ましい。 The group represented by R 2 is preferably a hydrogen atom or an alkyl group having 4 to 50 carbon atoms, such as a hydrogen atom or 4 to 34 carbon atoms, from the viewpoint of high solubility and carrier mobility of the conjugated polymer of the present invention. Alkyl groups of more preferably hydrogen atom, butyl group, pentyl group, hexyl group, octyl group, decyl group, nonadecyl group, icosyl group, henicosyl group, 2-decyltetradecyl group, 2-dodecylhexadecyl group, 2- Tetradecylhexadecyl group, 2-decyltetradecyloxy group, 2-dodecyltetradecyloxy group, 2-dodecylhexadecyloxy group or 2-tetradecylhexadecyloxy group are more preferable, hydrogen atom, hexyl group, octyl group , a decyl group, a 2-decyltetradecyl group or a 2-decyltetradecyl group is particularly preferred.
R3は、本発明の共役系高分子の溶解性並びにキャリア移動度が高い点で、炭素数4から50のアルコキシ基を用いることが好ましく、炭素数4から30のアルコキシ基がより好ましく、ブチルオキシ基、ペンチルオキシ基、ヘキシルオキシ基、ヘプチルオキシ基、オクチルオキシ基、ノニルオキシ基、デシルオキシ基、ドデシルオキシ基、2-ヘキシルデシルオキシ基、2-オクチルドデシルオキシ基、2-デシルテトラデシルオキシ基、2-ドデシルテトラデシルオキシ基、2-ドデシルヘキサデシルオキシ基又は2-テトラデシルヘキサデシルオキシ基がさらに好ましく、ヘキシルオキシ基、オクチルオキシ基、2-ヘキシルデシルオキシ基、2-デシルテトラデシルオキシ基がことさら好ましい。 R 3 is preferably an alkoxy group having 4 to 50 carbon atoms, more preferably an alkoxy group having 4 to 30 carbon atoms, from the viewpoint of high solubility and carrier mobility of the conjugated polymer of the present invention. group, pentyloxy group, hexyloxy group, heptyloxy group, octyloxy group, nonyloxy group, decyloxy group, dodecyloxy group, 2-hexyldecyloxy group, 2-octyldodecyloxy group, 2-decyltetradecyloxy group, A 2-dodecyltetradecyloxy group, a 2-dodecylhexadecyloxy group or a 2-tetradecylhexadecyloxy group is more preferable, and a hexyloxy group, an octyloxy group, a 2-hexyldecyloxy group and a 2-decyltetradecyloxy group. is particularly preferred.
次に本発明の共役系高分子について説明する。 Next, the conjugated polymer of the present invention will be explained.
本発明の共役系高分子は下記一般式(1) The conjugated polymer of the present invention has the following general formula (1)
(式中、R1は前記と同様の意味を表す。)で表される2価の構造単位と下記一般式(2) (Wherein, R 1 has the same meaning as described above.) and a divalent structural unit represented by the following general formula (2)
(式中、R2及びR3前記と同様の意味を表す。)で表される2価の構造単位とより構成される共役系高分子である。 (In the formula, R 2 and R 3 have the same meanings as defined above.).
一般式(1)で表される具体的な構造単位は、式(1-2)から式(1-17)を例示することができるが、本発明はこれに限定されるものではない。 Specific structural units represented by general formula (1) can be exemplified by formulas (1-2) to (1-17), but the present invention is not limited thereto.
一般式(1)で表される構造単位は、本発明の共役系高分子の成膜性並びにキャリア移動度が高い点で、式(1-2)から式(1-14)が好ましく、式(1-2)から式(1-12)がより好ましく、式(1-10)から式(1-12)がことさら好ましい。 The structural unit represented by the general formula (1) is preferably the formula (1-2) to the formula (1-14) in terms of the film-forming properties and carrier mobility of the conjugated polymer of the present invention. Formulas (1-2) to (1-12) are more preferred, and formulas (1-10) to (1-12) are particularly preferred.
一般式(2)で表される具体的な構造単位は、式(2-1)から式(2-80)を例示することができるが、本発明はこれに限定されるものではない。 Specific structural units represented by general formula (2) can be exemplified by formulas (2-1) to (2-80), but the present invention is not limited thereto.
一般式(1)で表される構造単位は、本発明の共役系高分子の成膜性並びにキャリア移動度が高い点で、式(2-1)から式(2-6)、式(2-7)から式(2-14)、式(2-15)から式(2-20)、式(2-29)から式(2-44)、式(2-53)から式(2-58)、式(2-67)から式(2-72)、式(2-81)から式(2-86)が好ましく、式(2-3)、式(2-5)、式(2-8)、式(2-10)、式(2-12)、式(2-16)、式(2-41)、式(2-81)がより好ましい。 The structural unit represented by the general formula (1) has a high film-forming property and carrier mobility of the conjugated polymer of the present invention, and is represented by formulas (2-1) to (2-6) and formula (2). -7) to formula (2-14), formula (2-15) to formula (2-20), formula (2-29) to formula (2-44), formula (2-53) to formula (2- 58), formula (2-67) to formula (2-72), formula (2-81) to formula (2-86) are preferable, formula (2-3), formula (2-5), formula (2 -8), formula (2-10), formula (2-12), formula (2-16), formula (2-41), and formula (2-81) are more preferred.
本発明の共役系高分子は、一般式(1)と一般式(2)で表される構造単位を含んでいれば構造単位の順序に特に制限はなく、例えば交互、ランダム又はグラジエント等が挙げられる。成膜性並びに移動度が高い点で、一般式(1)と一般式(2)で表される構造単位が交互に繰り返される共役系高分子が好ましい。すなわち、一般式(3) In the conjugated polymer of the present invention, the order of the structural units is not particularly limited as long as it contains the structural units represented by the general formulas (1) and (2). Examples include alternating, random, and gradient. be done. A conjugated polymer in which the structural units represented by the general formula (1) and the general formula (2) are alternately repeated is preferable in terms of film formability and mobility. That is, general formula (3)
(式中、R1、R2、及びR3は前記と同様の意味を表す。)で表される構造単位からなる共役系高分子である。 (wherein R 1 , R 2 and R 3 have the same meanings as above).
一般式(3)で表される本発明の共役系高分子として、成膜性並びにキャリア移動度が高い点で、具体的には式(3-1)から式(3-84) As the conjugated polymer of the present invention represented by the general formula (3), in terms of high film-forming properties and carrier mobility, specifically formulas (3-1) to (3-84)
で表される構造単位を表される共役系高分子が好ましく、式(3-1)から式(3-10)、式(3-13)から式(3-38)、式(3-41)から式(3-66)、式(3-69)から式(3-94)、式(3-97)から式(3-160)がより好ましく、式(3-29)、式(3-31)、式(3-34)、式(3-36)、式(3-45)、式(3-138)がことさら好ましい。 A conjugated polymer represented by a structural unit represented by is preferable, and formulas (3-1) to (3-10), formulas (3-13) to formulas (3-38), and formulas (3-41 ) to formula (3-66), formula (3-69) to formula (3-94), formula (3-97) to formula (3-160) are more preferable, formula (3-29), formula (3 -31), formula (3-34), formula (3-36), formula (3-45), and formula (3-138) are particularly preferred.
構造単位における左末端を頭、右末端を尾と呼び、その位置規則性に特に制限はないが、例えば頭-尾構造が好ましい。 The left end of the structural unit is called the head, and the right end is called the tail. There is no particular restriction on the regioregularity, but for example, a head-to-tail structure is preferred.
本発明の共役系高分子の分子量は、高溶解性及び高移動度のため、2,000~2,000,000であることが好ましく、4,000~300,000がさらに好ましく、6,000~150,000が特に好ましい。なお、本発明において、該分子量はポリスチレン換算の重量平均分子量(Mw)をいうものである。 The molecular weight of the conjugated polymer of the present invention is preferably 2,000 to 2,000,000, more preferably 4,000 to 300,000, more preferably 6,000, for high solubility and high mobility. ~150,000 is particularly preferred. In the present invention, the molecular weight refers to the weight average molecular weight (Mw) in terms of polystyrene.
本発明の共役系高分子の末端構造に特に制限はないが、例えば、水素原子、ボロン酸、ボロン酸エステル等のホウ素基、トリメチルスタニル、トリブチルスタニル等のスズ基、塩素原子、臭素原子、ヨウ素原子等のハロゲン原子、フェニル基、チエニル基等の芳香族基等が挙げられ、両末端の構造は同一又は相異なっていてもよい。 The terminal structure of the conjugated polymer of the present invention is not particularly limited. , a halogen atom such as an iodine atom, an aromatic group such as a phenyl group and a thienyl group, and the like, and the structures at both terminals may be the same or different.
次に本発明の共役系高分子は、例えば、文献記載の方法(特開2020-111737号公報など)を参考に製造できる。 Next, the conjugated polymer of the present invention can be produced, for example, by referring to the method described in literature (JP-A-2020-111737, etc.).
次に本発明の共役系高分子を含む成膜用組成物(以下、「本発明の成膜用組成物」と称する。)の製造方法について説明する。 Next, a method for producing a film-forming composition containing the conjugated polymer of the present invention (hereinafter referred to as "the film-forming composition of the present invention") will be described.
本発明の成膜組成物は、本発明の共役系高分子を溶媒に溶解又は分散させることにより、調製することができる。 The film-forming composition of the present invention can be prepared by dissolving or dispersing the conjugated polymer of the present invention in a solvent.
該溶媒としては、本発明の共役系高分子を溶媒に溶解、又は分散させることができれば特に制限はないが、ジイソプロピルエーテル、ジブチルエーテル、シクロペンチルメチルエーテル(CPME)、テトラヒドロフラン(THF)、2-メチルテトラヒドロフラン、1,4-ジオキサン、ジメトキシエタン等のエーテル溶媒、ベンゼン、トルエン、キシレン、メシチレン、テトラリン等の芳香族炭化水素溶媒、エチレンカーボネート、プロピレンカーボネート、ジメチルカーボネート、ジエチルカーボネート、エチルメチルカーボネート、4-フルオロエチレンカーボネート等の炭酸エステル溶媒、酢酸エチル、酢酸ブチル、プロピオン酸メチル、プロピオン酸エチル、酪酸メチル、γ-ラクトン等のエステル溶媒、N,N-ジメチルホルムアミド(DMF)、N,N-ジメチルアセトアミド(DMAc)、N-メチルピロリドン(NMP)等のアミド溶媒、N,N,N’,N’-テトラメチルウレア(TMU)、N,N’-ジメチルプロピレンウレア(DMPU)等のウレア溶媒、ジメチルスルホキシド(DMSO)等のスルホキシド溶媒、メタノール、エタノール、2-プロパノール、ブタノール、オクタノール、ベンジルアルコール、エチレングリコール、プロピレングリコール、ジエチレングリコール、トリエチレングリコール、2,2,2-トリフルオロエタノール等のアルコール溶媒、クロロホルム、ジクロロメタン、四塩化炭素、1,2-ジクロロエタン、クロロベンゼン、オルトジクロロベンゼン(o-DCB)等のハロゲン溶媒、ニトロメタン、水、等を例示することができ、これらを任意の比で混合して用いてもよい。これらのうち、沸点が高く穏やかに揮発する点で、芳香族炭化水素、ハロゲン溶媒が好ましく、トルエン、キシレン、メシチレン、シクロヘキシルベンゼン、テトラリン、3,4-ジメチルアニソール、クロロベンゼン、o-DCBがさらに好ましい。 The solvent is not particularly limited as long as it can dissolve or disperse the conjugated polymer of the present invention in the solvent. Ether solvents such as tetrahydrofuran, 1,4-dioxane and dimethoxyethane; aromatic hydrocarbon solvents such as benzene, toluene, xylene, mesitylene and tetralin; ethylene carbonate, propylene carbonate, dimethyl carbonate, diethyl carbonate, ethyl methyl carbonate; Carbonic ester solvents such as fluoroethylene carbonate, ester solvents such as ethyl acetate, butyl acetate, methyl propionate, ethyl propionate, methyl butyrate, γ-lactone, N,N-dimethylformamide (DMF), N,N-dimethylacetamide (DMAc), N-methylpyrrolidone (NMP) and other amide solvents, N,N,N',N'-tetramethylurea (TMU), N,N'-dimethylpropyleneurea (DMPU) and other urea solvents, dimethyl sulfoxide solvents such as sulfoxide (DMSO); alcohol solvents such as methanol, ethanol, 2-propanol, butanol, octanol, benzyl alcohol, ethylene glycol, propylene glycol, diethylene glycol, triethylene glycol, 2,2,2-trifluoroethanol; Halogen solvents such as chloroform, dichloromethane, carbon tetrachloride, 1,2-dichloroethane, chlorobenzene, orthodichlorobenzene (o-DCB), nitromethane, water, etc. can be exemplified, and these can be mixed at any ratio. may be used. Among these, aromatic hydrocarbons and halogen solvents are preferable because they have high boiling points and moderate volatilization, and toluene, xylene, mesitylene, cyclohexylbenzene, tetralin, 3,4-dimethylanisole, chlorobenzene, and o-DCB are more preferable. .
溶媒の使用量に特に制限はなく、本発明の共役系高分子の濃度が、0.001~95重量パーセントであり、0.01~30重量パーセントから適宜選ばれた濃度となるように溶媒を加えることがより好ましい。 The amount of the solvent used is not particularly limited, and the solvent is added so that the concentration of the conjugated polymer of the present invention is 0.001 to 95% by weight, and the concentration is appropriately selected from 0.01 to 30% by weight. Adding is more preferred.
溶解又は分散の方法は、例えば、撹拌、振盪、ボールミル等の当業者のよく知る方法を用いることができる。この際、加熱を行っても良い。 Methods well known to those skilled in the art such as stirring, shaking, and ball milling can be used for dissolving or dispersing. At this time, heating may be performed.
本発明の成膜用組成物には成膜性を向上させるためのバインダーを加えてもよい。このようなバインダーとしては、例えば、ポリスチレン、ポリ-α-メチルスチレン、ポリビニルナフタレン、ポリ(エチレン-コ-ノルボルネン)、ポリメチルメタクリレート、ポリトリアリールアミン、ポリ(9,9-ジオクチルフルオレン-コ-ジメチルトリフェニルアミン)等のポリマーを例示することができる。該バインダーの濃度に特に制限はないが、塗布性が良い点で0.1~10.0重量パーセントが好ましい。 A binder may be added to the film-forming composition of the present invention to improve film-forming properties. Examples of such binders include polystyrene, poly-α-methylstyrene, polyvinylnaphthalene, poly(ethylene-co-norbornene), polymethylmethacrylate, polytriarylamine, poly(9,9-dioctylfluorene-co- dimethyltriphenylamine) can be exemplified. Although the concentration of the binder is not particularly limited, it is preferably 0.1 to 10.0% by weight from the viewpoint of good coatability.
次に、本発明の成膜用組成物を用いて成膜する有機薄膜(以下、「本発明の有機薄膜」と称する。)の成膜方法について説明する。 Next, a method for forming an organic thin film (hereinafter referred to as "the organic thin film of the present invention") using the film-forming composition of the present invention will be described.
本発明の成膜用組成物を用いて、本発明の有機薄膜を形成する際の方法に特に制限はなく、例えば、スピンコート、ドロップキャスト、ディップコート、キャストコート等の簡易塗工法、ディスペンサー、インクジェット、スリットコート、ブレードコート、フレキソ印刷、スクリーン印刷、グラビア印刷、オフセット印刷等の印刷法を挙げることができ、中でも効率よく成膜できる点で、スピンコート、ドロップキャスト、インクジェットが好ましい。 The method for forming the organic thin film of the present invention using the film-forming composition of the present invention is not particularly limited. Printing methods such as inkjet, slit coating, blade coating, flexographic printing, screen printing, gravure printing, and offset printing can be mentioned, and among them, spin coating, drop casting, and inkjet are preferable in terms of efficient film formation.
本発明の有機薄膜の膜厚に特に制限は無いが、キャリア移動度が高い点で1nm~1000nmが好ましく、10nm~500nmがさらに好ましい。 Although the thickness of the organic thin film of the present invention is not particularly limited, it is preferably 1 nm to 1000 nm, more preferably 10 nm to 500 nm, in terms of high carrier mobility.
本発明の有機薄膜は成膜後、溶媒を乾燥させることで得ることができる。必要に応じて、40-400℃の範囲から適宜選択された温度にてアニールを行っても良い。 The organic thin film of the present invention can be obtained by drying the solvent after film formation. Annealing may be performed at a temperature appropriately selected from the range of 40 to 400° C., if necessary.
本発明の縮環高分子化合物を活性層に含む有機薄膜トランジスタ素子(以下、「本発明の有機薄膜トランジスタ素子」と称する)の作製方法について説明する。 A method for producing an organic thin film transistor device containing the condensed ring polymer compound of the present invention in the active layer (hereinafter referred to as "organic thin film transistor device of the present invention") will be described.
本発明の有機薄膜トランジスタ素子は、基板上に絶縁層及び活性層として本発明の有機薄膜を成膜し、これにソース電極、ドレイン電極及びゲート電極を付設することにより得られる。 The organic thin film transistor element of the present invention is obtained by forming the organic thin film of the present invention as an insulating layer and an active layer on a substrate, and providing a source electrode, a drain electrode and a gate electrode thereon.
図1に、本発明の有機薄膜トランジスタ素子に含まれる素子の構造を示す。ここで、(A)は、ボトムゲート-トップコンタクト型、(B)は、ボトムゲート-ボトムコンタクト型、(C)は、トップゲート-トップコンタクト型、(D)は、トップゲート-ボトムコンタクト型のトランジスタ素子であり、1は活性層、2は基板、3はゲート電極、4はゲート絶縁層、5はソース電極、6はドレイン電極を示す。 FIG. 1 shows the structure of an element included in the organic thin film transistor element of the present invention. Here, (A) is a bottom gate-top contact type, (B) is a bottom gate-bottom contact type, (C) is a top gate-top contact type, and (D) is a top gate-bottom contact type. 1 is an active layer, 2 is a substrate, 3 is a gate electrode, 4 is a gate insulating layer, 5 is a source electrode, and 6 is a drain electrode.
基板としては、例えば、ポリエチレンテレフタレート、ポリエチレンナフタレート、ポリメチルメタクリレート、ポリメチルアクリレート、ポリエチレン、ポリプロピレン、ポリスチレン、環状ポリオレフィン、ポリイミド、ポリカーボネート、ポリビニルフェノール、ポリビニルアルコール、ポリ(ジイソプロピルフマレート)、ポリ(ジエチルフマレート)、ポリ(ジイソプロピルマレエート)、ポリエーテルスルホン、ポリフェニレンスルフィド、セルローストリアセテート等のプラスチック基板、ガラス、石英、酸化アルミニウム、シリコン、ハイド-プシリコン、酸化シリコン、二酸化タンタル、五酸化タンタル、インジウムスズ酸化物等の無機基板、金、銅、クロム、チタン、アルムニウム等の金属基板等を挙げることができる。これらのうち、トランジスタ性能が良い点で、ガラス、シリコン、ハイドープシリコンが好ましく、ガラスがより好ましい。 Substrates include, for example, polyethylene terephthalate, polyethylene naphthalate, polymethyl methacrylate, polymethyl acrylate, polyethylene, polypropylene, polystyrene, cyclic polyolefin, polyimide, polycarbonate, polyvinylphenol, polyvinyl alcohol, poly(diisopropyl fumarate), poly(diethyl fumarate), poly(diisopropyl maleate), polyethersulfone, polyphenylene sulfide, cellulose triacetate plastic substrates, glass, quartz, aluminum oxide, silicon, hydrated silicon, silicon oxide, tantalum dioxide, tantalum pentoxide, indium tin Inorganic substrates such as oxides, and metal substrates such as gold, copper, chromium, titanium, and aluminum can be used. Among these, glass, silicon, and highly doped silicon are preferred, and glass is more preferred, in terms of good transistor performance.
ゲート電極としては、例えば、アルミニウム、金、銀、銅、ハイドープシリコン、スズ酸化物、酸化インジウム、インジウムスズ酸化物、クロム、チタン、タンタル、クロム、グラフェン、カーボンナノチューブ等の無機電極又はドープされた導電性高分子(PEDOT-PSS)等の有機電極等を挙げることができる。これらのうち、導電性が良い点で無機電極が好ましく、金がより好ましい。 As the gate electrode, for example, inorganic electrodes such as aluminum, gold, silver, copper, highly doped silicon, tin oxide, indium oxide, indium tin oxide, chromium, titanium, tantalum, chromium, graphene, carbon nanotubes, or doped and organic electrodes such as conductive polymer (PEDOT-PSS). Among these, an inorganic electrode is preferred because of its good conductivity, and gold is more preferred.
絶縁層としては、例えば、酸化シリコン、窒化シリコン、酸化アルミニウム、窒化アルミニウム、酸化チタン、二酸化タンタル、五酸化タンタル、インジウムスズ酸化物、酸化スズ、酸化バナジウム、チタン酸バリウム、チタン酸ビスマス等の無機絶縁層、ポリエチレンテレフタレート、ポリエチレンナフタレート、ポリメチルメタクリレート、ポリメチルアクリレート、ポリエチレン、ポリプロピレン、ポリスチレン、環状ポリオレフィン、ポリイミド、ポリカーボネート、ポリビニルフェノール、ポリビニルアルコール、ポリ(ジイソプロピルフマレート)、ポリ(ジエチルフマレート)、ポリ(ジイソプロピルマレエート)、ポリエーテルスルホン、ポリフェニレンスルフィド、セルローストリアセテート、ポリシクロペンタン、ポリシクロヘキサン-エチレン共重合体、ポリフッ素化シクロペンタン、サイトップ、ポリフッ素化シクロヘキサン、ポリフッ素化シクロヘキサン-エチレン共重合体、パリレンN、パリレンC、パリレンD、パリレンHT、パリレンC-UVF等の有機絶縁層等を挙げることができる。これらのうち、絶縁性が良い点で有機絶縁層が好ましく、パリレンCがさらに好ましい。また、これらの絶縁層表面は、例えば、オクタデシルトリクロロシラン、デシルトリクロロシラン、デシルトリメトキシシラン、オクチルトリクロロシラン、オクタデシルトリメトキシシラン、β-フェネチルトリクロロシラン、β-フェネチルトリメトキシシラン、フェニルトリクロロシラン、フェニルトリメトキシシラン等のシラン類、オクタデシルホスホン酸、デシルホスホン酸、オクチルホスホン酸等のホスホン酸類、ヘキサメチルジシラザン等のアミン類で修飾処理しても良い。これらのうち、本発明の有機薄膜トランジスタ素子のキャリア移動度及び電流オン・オフ比が向上し、並びに閾値電圧の低下する点で、オクタデシルトリクロロシラン、オクチルトリクロロシラン、β-フェネチルトリクロロシラン、オクタデシルホスホン酸、オクチルホスホン酸、ヘキサメチルジシラザンが好ましい。 Examples of insulating layers include inorganic materials such as silicon oxide, silicon nitride, aluminum oxide, aluminum nitride, titanium oxide, tantalum dioxide, tantalum pentoxide, indium tin oxide, tin oxide, vanadium oxide, barium titanate, and bismuth titanate. Insulating layer, polyethylene terephthalate, polyethylene naphthalate, polymethyl methacrylate, polymethyl acrylate, polyethylene, polypropylene, polystyrene, cyclic polyolefin, polyimide, polycarbonate, polyvinylphenol, polyvinyl alcohol, poly(diisopropyl fumarate), poly(diethyl fumarate) , poly(diisopropyl maleate), polyethersulfone, polyphenylene sulfide, cellulose triacetate, polycyclopentane, polycyclohexane-ethylene copolymer, polyfluorinated cyclopentane, CYTOP, polyfluorinated cyclohexane, polyfluorinated cyclohexane-ethylene Organic insulating layers such as copolymers, parylene N, parylene C, parylene D, parylene HT, and parylene C-UVF can be used. Among these, an organic insulating layer is preferred because of its good insulating properties, and parylene C is more preferred. In addition, these insulating layer surfaces are, for example, octadecyltrichlorosilane, decyltrichlorosilane, decyltrimethoxysilane, octyltrichlorosilane, octadecyltrimethoxysilane, β-phenethyltrichlorosilane, β-phenethyltrimethoxysilane, phenyltrichlorosilane, It may be modified with silanes such as phenyltrimethoxysilane, phosphonic acids such as octadecylphosphonic acid, decylphosphonic acid and octylphosphonic acid, and amines such as hexamethyldisilazane. Among these, octadecyltrichlorosilane, octyltrichlorosilane, β-phenethyltrichlorosilane, and octadecylphosphonic acid are preferred in terms of improving the carrier mobility and current on/off ratio of the organic thin film transistor device of the present invention and lowering the threshold voltage. , octylphosphonic acid and hexamethyldisilazane are preferred.
ソース電極及びドレイン電極としては、ゲート電極で例示したものと同様の電極を例示することができる。これらのうち、導電性が良い点で無機電極が好ましく、金がさらに好ましい。また、キャリアの注入効率を上げる為に、これらの電極に表面処理材を用いて表面処理を実施することができる。このような表面処理材としては、例えば、ベンゼンチオール、ペンタフルオロベンゼンチオール等を挙げることができる。 As the source electrode and the drain electrode, electrodes similar to those exemplified for the gate electrode can be exemplified. Among these, an inorganic electrode is preferred because of its good conductivity, and gold is more preferred. Moreover, in order to increase the efficiency of carrier injection, these electrodes can be surface-treated using a surface-treating material. Examples of such surface treatment materials include benzenethiol and pentafluorobenzenethiol.
以下、実施例を挙げて、本発明をさらに具体的に説明するが、本発明は以下の実施例に限定されるものではない。 EXAMPLES Hereinafter, the present invention will be described in more detail with reference to examples, but the present invention is not limited to the following examples.
実施例で得られた高分子の分子量と分子量分布はGel Permeation Chro,atography(GPC)測定により見積もった。試薬類は市販品を用いた。
<GPC測定条件>
測定装置:東ソー株式会社 高速GPC装置 HLC-8320GPC EcoSEC
カラム:TSKgel SuperMultiporeHZ-H、TSKgel SuperHZ2000
測定溶媒:THF
測定温度:25℃
校正曲線:ポリスチレンスタンダード
<高温GPC測定条件>
測定装置:東ソー株式会社 高温GPC装置 HLC-8321GPC/HT
カラム:TSKgel GMHHR-H(20)HT
測定溶媒:1,2,4-トリクロロベンゼン(TCB)
測定温度:140℃
校正曲線:ポリスチレンスタンダード
<TGA測定条件>
測定装置:SII株式会社 EXSTAR6000 TGA/DTA6200
試料容器:アルミパン
測定雰囲気:窒素
Td3、Td5並びにTd10は3%、5%並びに10%重量減少温度をそれぞれ表す。
<DSC測定条件>
測定装置:SII株式会社 EXSTAR6000 DSC6220
試料容器:アルミパン
測定条件:窒素雰囲気、10℃/min、0~300℃、結果は三回目のHeatingScanを採用。
[実施例1]
The molecular weights and molecular weight distributions of the polymers obtained in Examples were estimated by Gel Permeation Chro-Atography (GPC) measurement. Commercially available reagents were used.
<GPC measurement conditions>
Measuring device: Tosoh Corporation high-speed GPC device HLC-8320GPC EcoSEC
Column: TSKgel SuperMultiporeHZ-H, TSKgel SuperHZ2000
Measurement solvent: THF
Measurement temperature: 25°C
Calibration curve: Polystyrene standard <High temperature GPC measurement conditions>
Measuring device: Tosoh Corporation high temperature GPC device HLC-8321GPC/HT
Column: TSKgel GMH HR -H(20)HT
Measurement solvent: 1,2,4-trichlorobenzene (TCB)
Measurement temperature: 140°C
Calibration curve: polystyrene standard <TGA measurement conditions>
Measuring device: SII Co., Ltd. EXSTAR6000 TGA/DTA6200
Sample container: aluminum pan Measurement atmosphere: nitrogen T d3 , T d5 and T d10 represent 3%, 5% and 10% weight loss temperatures, respectively.
<DSC measurement conditions>
Measuring device: SII Co., Ltd. EXSTAR6000 DSC6220
Sample container: Aluminum pan Measurement conditions: Nitrogen atmosphere, 10°C/min, 0 to 300°C, the third Heating Scan was used for the results.
[Example 1]
モノマーB(200mg,144μmol)と4,7-ビス(5-ブロモチオフェン-2-イル)-5,6-ビス(n-オクチルオキシ)-2,1,3-ベンゾチアジアゾール(103mg,144μmol)、炭酸ナトリウム(76.3mg,719μmol)、トリ(o-トリル)ホスフィン(2.6mg,8.6μmol)、テトラリン(3.6mL)ならびにDMSO(0.7mL)の混合物を30分間アルゴンバブリングした。この混合溶液に、アルゴン気流下でPd2(dba)3・CHCl3(3.0mg,2.9μmol)を加えて120℃で66時間撹拌した。得られた混合物を室温まで冷やしたのちにメタノールに沈殿させることで析出した固体をろ過した。得られた固体をメタノール、アセトンおよびヘキサンを用いてソックスレー抽出にてこれらの溶媒に可溶な成分を除去した。さらに、フィルター残さをクロロホルムに溶解させ、メタノールに沈殿させることで析出した固体をろ過した。得られた固体をメタノールで洗浄したのちに90℃で減圧乾燥することで黒色固体の(3-29)を得た(207mg,85%)。
GPC(THF):Mn=17000,Mw=91000,PDI=3.01。
GPC(TCB,140℃):Mn=2000g/mol、Mw=7400g/mol、PDI=3.6。
Td3=312℃,Td5=321℃,Td10=336℃。
DSCで相転移点は観測されなかった。
[実施例2]
Monomer B (200 mg, 144 μmol) and 4,7-bis(5-bromothiophen-2-yl)-5,6-bis(n-octyloxy)-2,1,3-benzothiadiazole (103 mg, 144 μmol), A mixture of sodium carbonate (76.3 mg, 719 μmol), tri(o-tolyl)phosphine (2.6 mg, 8.6 μmol), tetralin (3.6 mL) and DMSO (0.7 mL) was bubbled with argon for 30 minutes. Pd 2 (dba) 3 .CHCl 3 (3.0 mg, 2.9 μmol) was added to this mixed solution under an argon stream, and the mixture was stirred at 120° C. for 66 hours. After the obtained mixture was cooled to room temperature, it was precipitated in methanol, and the precipitated solid was filtered. The obtained solid was subjected to Soxhlet extraction using methanol, acetone and hexane to remove components soluble in these solvents. Furthermore, the filter residue was dissolved in chloroform and precipitated in methanol, and the precipitated solid was filtered. The obtained solid was washed with methanol and dried under reduced pressure at 90° C. to obtain black solid (3-29) (207 mg, 85%).
GPC (THF): Mn = 17000, Mw = 91000, PDI = 3.01.
GPC (TCB, 140° C.): Mn=2000 g/mol, Mw=7400 g/mol, PDI=3.6.
Td3 = 312°C, Td5 = 321°C, Td10 = 336°C.
No phase transition point was observed by DSC.
[Example 2]
モノマーS(100mg,68.3μmol)と4,7-ビス(5-ブロモチオフェン-2-イル)-5,6-ビス(n-オクチルオキシ)-2,1,3-ベンゾチアジアゾール(48.8mg,68.3μmol)ならびにトルエン(1.7mL)の混合物を30分間アルゴンバブリングした。この混合溶液に、Pd(PPh3)4(1.6mg,1.4μmol)を加えてマイクロウェーブリアクターを用いて180℃で2時間撹拌した。得られた混合物を室温まで冷やしたのちにメタノールに沈殿させることで析出した固体をろ過した。得られた固体をメタノール、アセトン、ヘキサン、クロロホルムおよびモノクロロベンゼンを用いてソックスレー抽出にてこれらの溶媒に可溶な成分を除去した。さらに、フィルター残さをo-ジクロロベンゼンに溶解させ、メタノールに沈殿させることで析出した固体をろ過した。得られた固体をメタノールで洗浄したのちに90℃で減圧乾燥することで黒色固体の(3-29)を得た(モノクロロベンゼン可溶分:24mg,21%,o-ジクロロベンゼン可溶分:54mg,47%)。
モノクロロベンゼン可溶分:
GPC(TCB,140℃):Mn=1900g/mol、Mw=10000g/mol、PDI=5.5。
Td3=321℃,Td5=331℃,Td10=358℃。
DSCで相転移点は観測されなかった。
o-ジクロロベンゼン可溶分:
GPC(TCB,140℃):Mn=24000g/mol、Mw=95000g/mol、PDI=4.0。
Td3=315℃,Td5=325℃,Td10=343℃。
DSCで相転移点は観測されなかった。
[実施例3]
Monomer S (100 mg, 68.3 μmol) and 4,7-bis(5-bromothiophen-2-yl)-5,6-bis(n-octyloxy)-2,1,3-benzothiadiazole (48.8 mg , 68.3 μmol) and toluene (1.7 mL) was bubbled with argon for 30 minutes. Pd(PPh 3 ) 4 (1.6 mg, 1.4 μmol) was added to this mixed solution and stirred at 180° C. for 2 hours using a microwave reactor. After the obtained mixture was cooled to room temperature, it was precipitated in methanol, and the precipitated solid was filtered. The obtained solid was subjected to Soxhlet extraction using methanol, acetone, hexane, chloroform and monochlorobenzene to remove components soluble in these solvents. Furthermore, the filter residue was dissolved in o-dichlorobenzene, precipitated in methanol, and the precipitated solid was filtered. The obtained solid was washed with methanol and then dried under reduced pressure at 90° C. to obtain a black solid (3-29) (monochlorobenzene soluble matter: 24 mg, 21%, o-dichlorobenzene soluble matter: 54 mg, 47%).
Monochlorobenzene solubles:
GPC (TCB, 140° C.): Mn=1900 g/mol, Mw=10000 g/mol, PDI=5.5.
Td3 = 321°C, Td5 = 331°C, Td10 = 358°C.
No phase transition point was observed by DSC.
o-dichlorobenzene solubles:
GPC (TCB, 140° C.): Mn=24000 g/mol, Mw=95000 g/mol, PDI=4.0.
Td3 = 315°C, Td5 = 325°C, Td10 = 343°C.
No phase transition point was observed by DSC.
[Example 3]
モノマーS(100mg,68.3μmol)と4,7-ビス(5-ブロモチオフェン-2-イル)-5,6-ビス(n-ドデシルオキシ)-2,1,3-ベンゾチアジアゾール(56.5mg,68.3μmol)ならびにテトラリン(2.0mL)の混合物を30分間アルゴンバブリングした。この混合溶液に、Pd2(dba)3・CHCl3(1.4mg,1.4μmol)とトリ(o-トリル)ホスフィン(1.7mg,5.5μmol)を加えてマイクロウェーブリアクターを用いて180℃で2時間撹拌した。得られた混合物を室温まで冷やしたのちにメタノール/1N塩酸の混合溶液(150mL/10mL)に沈殿させることで析出した固体をろ過した。得られた固体をメタノール、アセトン、ヘキサン、クロロホルムおよびモノクロロベンゼンを用いてソックスレー抽出にてこれらの溶媒に可溶な成分を除去した。さらに、フィルター残さをo-ジクロロベンゼンに溶解させ、メタノールに沈殿させることで析出した固体をろ過した。得られた固体をメタノールで洗浄したのちに90℃で減圧乾燥することで黒色固体の(3-31)を得た(モノクロロベンゼン可溶分:67mg,55%,o-ジクロロベンゼン可溶分:47mg,38%)。
モノクロロベンゼン可溶分:
GPC(TCB,140℃):Mn=27000g/mol、Mw=75000g/mol、PDI=2.81。
Td3=315℃,Td5=325℃,Td10=343℃。
DSCで相転移点は観測されなかった。
o-ジクロロベンゼン可溶分:
GPC(TCB,140℃):Mn=46000g/mol、Mw=107000g/mol、PDI=2.33。
Td3=315℃,Td5=324℃,Td10=341℃。
DSCで相転移点は観測されなかった。
[実施例4]
Monomer S (100 mg, 68.3 μmol) and 4,7-bis(5-bromothiophen-2-yl)-5,6-bis(n-dodecyloxy)-2,1,3-benzothiadiazole (56.5 mg , 68.3 μmol) and tetralin (2.0 mL) was bubbled with argon for 30 minutes. Pd 2 (dba) 3 .CHCl 3 (1.4 mg, 1.4 μmol) and tri(o-tolyl)phosphine (1.7 mg, 5.5 μmol) were added to this mixed solution and heated to 180 using a microwave reactor. C. for 2 hours. After the obtained mixture was cooled to room temperature, it was precipitated in a mixed solution of methanol/1N hydrochloric acid (150 mL/10 mL), and the precipitated solid was filtered. The obtained solid was subjected to Soxhlet extraction using methanol, acetone, hexane, chloroform and monochlorobenzene to remove components soluble in these solvents. Furthermore, the filter residue was dissolved in o-dichlorobenzene, precipitated in methanol, and the precipitated solid was filtered. The obtained solid was washed with methanol and then dried under reduced pressure at 90° C. to obtain a black solid (3-31) (monochlorobenzene soluble matter: 67 mg, 55%, o-dichlorobenzene soluble matter: 47 mg, 38%).
Monochlorobenzene solubles:
GPC (TCB, 140° C.): Mn=27000 g/mol, Mw=75000 g/mol, PDI=2.81.
Td3 = 315°C, Td5 = 325°C, Td10 = 343°C.
No phase transition point was observed by DSC.
o-dichlorobenzene solubles:
GPC (TCB, 140° C.): Mn=46000 g/mol, Mw=107000 g/mol, PDI=2.33.
Td3 = 315°C, Td5 = 324°C, Td10 = 341°C.
No phase transition point was observed by DSC.
[Example 4]
モノマーS(100mg,68.3μmol)と4,7-ビス(5-ブロモチオフェン-2-イル)-5,6-ビス[(2-ヘキシルデシル)オキシ]-2,1,3-ベンゾチアジアゾール(64.2mg,68.3μmol)ならびにテトラリン(2.0mL)の混合物を30分間アルゴンバブリングした。この混合溶液に、Pd2(dba)3・CHCl3(1.4mg,1.4μmol)とトリ(o-トリル)ホスフィン(1.7mg,5.5μmol)を加えてマイクロウェーブリアクターを用いて180℃で2時間撹拌した。得られた混合物を室温まで冷やしたのちにメタノール/濃塩酸の混合溶液(150mL/10mL)に沈殿させることで析出した固体をろ過した。得られた固体をメタノール、アセトン、ヘキサンおよびクロロホルムを用いてソックスレー抽出にてこれらの溶媒に可溶な成分を除去した。さらに、フィルター残さをモノクロロベンゼンに溶解させた。この混合物にN,N-ジエチルジチオカルバミド酸ナトリウム水溶液(1g/100mL)を加えて60℃で2時間撹拌し、有機層を水で洗浄した。この操作を計2回行った。さらに、有機層にN,N-ジエチルジチオカルバミド酸ナトリウム水溶液(1g/100mL)を加えて室温で24時間撹拌し、有機層を水で洗浄したのちにセライトろ過を行った。その後、この混合物にフッ化カリウム水溶液(0.5g/100mL)を加えて室温で20時間撹拌し、有機層を水で洗浄したのちにセライトろ過を行った。この操作を計3回行った。得られた混合物を減圧下で濃縮し、メタノールに沈殿させることで析出した固体をろ過した。得られた固体をメタノールで洗浄したのちに90℃で減圧乾燥することで黒色固体の(3-34)を得た(46.6mg,35%)。
GPC(TCB,140℃):Mn=33000g/mol、Mw=85000g/mol、PDI=2.57。
[実施例5]
Monomer S (100 mg, 68.3 μmol) and 4,7-bis(5-bromothiophen-2-yl)-5,6-bis[(2-hexyldecyl)oxy]-2,1,3-benzothiadiazole ( 64.2 mg, 68.3 μmol) and tetralin (2.0 mL) was bubbled with argon for 30 minutes. Pd 2 (dba) 3 .CHCl 3 (1.4 mg, 1.4 μmol) and tri(o-tolyl)phosphine (1.7 mg, 5.5 μmol) were added to this mixed solution and heated to 180 using a microwave reactor. C. for 2 hours. After the obtained mixture was cooled to room temperature, it was precipitated in a mixed solution of methanol/concentrated hydrochloric acid (150 mL/10 mL), and the precipitated solid was filtered. The obtained solid was subjected to Soxhlet extraction using methanol, acetone, hexane and chloroform to remove components soluble in these solvents. Furthermore, the filter residue was dissolved in monochlorobenzene. An aqueous solution of sodium N,N-diethyldithiocarbamate (1 g/100 mL) was added to the mixture, and the mixture was stirred at 60° C. for 2 hours, and the organic layer was washed with water. This operation was performed twice in total. Furthermore, an aqueous solution of sodium N,N-diethyldithiocarbamate (1 g/100 mL) was added to the organic layer and the mixture was stirred at room temperature for 24 hours. The organic layer was washed with water and filtered through celite. Thereafter, an aqueous potassium fluoride solution (0.5 g/100 mL) was added to the mixture, and the mixture was stirred at room temperature for 20 hours, and the organic layer was washed with water and filtered through celite. This operation was performed 3 times in total. The obtained mixture was concentrated under reduced pressure, and the solid precipitated in methanol was filtered. The obtained solid was washed with methanol and dried under reduced pressure at 90° C. to obtain black solid (3-34) (46.6 mg, 35%).
GPC (TCB, 140° C.): Mn=33000 g/mol, Mw=85000 g/mol, PDI=2.57.
[Example 5]
モノマーS(100mg,68.3μmol)と4,7-ビス(5-ブロモチオフェン-2-イル)-5,6-ビス[(2-デシルテトラデシル)オキシ]-2,1,3-ベンゾチアジアゾール(79.5mg,68.3μmol)ならびにテトラリン(2.0mL)の混合物を30分間アルゴンバブリングした。この混合溶液に、Pd2(dba)3・CHCl3(1.4mg,1.4μmol)とトリ(o-トリル)ホスフィン(1.7mg,5.5μmol)を加えてマイクロウェーブリアクターを用いて180℃で2時間撹拌した。得られた混合物を室温まで冷やしたのちにメタノール/濃塩酸の混合溶液(150mL/10mL)に沈殿させることで析出した固体をろ過した。得られた固体をメタノール、アセトンおよびヘキサンを用いてソックスレー抽出にてこれらの溶媒に可溶な成分を除去した。さらに、フィルター残さをクロロホルムに溶解させた。この混合物にN,N-ジエチルジチオカルバミド酸ナトリウム水溶液(1g/100mL)を加えて60℃で2時間撹拌し、有機層を水で洗浄した。この操作を計2回行った。さらに、有機層にN,N-ジエチルジチオカルバミド酸ナトリウム水溶液(1g/100mL)を加えて室温で24時間撹拌し、有機層を水で洗浄したのちにセライトろ過を行った。その後、この混合物にフッ化カリウム水溶液(0.5g/100mL)を加えて室温で20時間撹拌し、有機層を水で洗浄したのちにセライトろ過を行った。この操作を計3回行った。得られた混合物を減圧下で濃縮し、メタノールに沈殿させることで析出した固体をろ過した。得られた固体をメタノールで洗浄したのちに90℃で減圧乾燥することで黒色固体の(3-36)を得た(86.7mg,59%)。
GPC(THF):Mn=79000g/mol、Mw=1869000g/mol、PDI=23.6。
GPC(TCB,140℃):Mn=10000g/mol、Mw=69000g/mol、PDI=6.90。
[実施例6]
Monomer S (100 mg, 68.3 μmol) and 4,7-bis(5-bromothiophen-2-yl)-5,6-bis[(2-decyltetradecyl)oxy]-2,1,3-benzothiadiazole A mixture of (79.5 mg, 68.3 μmol) and tetralin (2.0 mL) was bubbled with argon for 30 minutes. Pd 2 (dba) 3 .CHCl 3 (1.4 mg, 1.4 μmol) and tri(o-tolyl)phosphine (1.7 mg, 5.5 μmol) were added to this mixed solution and heated to 180 using a microwave reactor. C. for 2 hours. After the obtained mixture was cooled to room temperature, it was precipitated in a mixed solution of methanol/concentrated hydrochloric acid (150 mL/10 mL), and the precipitated solid was filtered. The obtained solid was subjected to Soxhlet extraction using methanol, acetone and hexane to remove components soluble in these solvents. Furthermore, the filter residue was dissolved in chloroform. An aqueous solution of sodium N,N-diethyldithiocarbamate (1 g/100 mL) was added to the mixture, and the mixture was stirred at 60° C. for 2 hours, and the organic layer was washed with water. This operation was performed twice in total. Furthermore, an aqueous solution of sodium N,N-diethyldithiocarbamate (1 g/100 mL) was added to the organic layer and the mixture was stirred at room temperature for 24 hours. The organic layer was washed with water and filtered through celite. Thereafter, an aqueous potassium fluoride solution (0.5 g/100 mL) was added to the mixture, and the mixture was stirred at room temperature for 20 hours, and the organic layer was washed with water and filtered through celite. This operation was performed 3 times in total. The obtained mixture was concentrated under reduced pressure, and the solid precipitated in methanol was filtered. The obtained solid was washed with methanol and dried under reduced pressure at 90° C. to obtain black solid (3-36) (86.7 mg, 59%).
GPC (THF): Mn = 79000 g/mol, Mw = 1869000 g/mol, PDI = 23.6.
GPC (TCB, 140° C.): Mn=10000 g/mol, Mw=69000 g/mol, PDI=6.90.
[Example 6]
モノマーS(100mg,68.3μmol)と4,7-ビス(5-ブロモ-4-オクチル-チオフェン-2-イル)-5,6-ビス(n-オクチルオキシ)-2,1,3-ベンゾチアジアゾール(64.2mg,68.3μmol)ならびにテトラリン(2.0mL)の混合物を30分間アルゴンバブリングした。この混合溶液に、Pd2(dba)3・CHCl3(1.4mg,1.4μmol)とトリ(o-トリル)ホスフィン(1.7mg,5.5μmol)を加えてマイクロウェーブリアクターを用いて180℃で2時間撹拌した。得られた混合物を室温まで冷やしたのちにメタノール/濃塩酸の混合溶液(150mL/10mL)に沈殿させることで析出した固体をろ過した。得られた固体をメタノール、アセトン、ヘキサンおよびクロロホルムを用いてソックスレー抽出にてこれらの溶媒に可溶な成分を除去した。さらに、フィルター残さをモノクロロベンゼンに溶解させた。この混合物にN,N-ジエチルジチオカルバミド酸ナトリウム水溶液(1g/100mL)を加えて60℃で2時間撹拌し、有機層を水で洗浄した。この操作を計2回行った。さらに、有機層にN,N-ジエチルジチオカルバミド酸ナトリウム水溶液(1g/100mL)を加えて室温で24時間撹拌し、有機層を水で洗浄したのちにセライトろ過を行った。その後、この混合物にフッ化カリウム水溶液(0.5g/100mL)を加えて室温で20時間撹拌し、有機層を水で洗浄したのちにセライトろ過を行った。この操作を計3回行った。得られた混合物を減圧下で濃縮し、メタノールに沈殿させることで析出した固体をろ過した。得られた固体をメタノールで洗浄したのちに90℃で減圧乾燥することで黒色固体の(3-45)を得た(64.1mg,49%)。
GPC(TCB,140℃):Mn=32000g/mol、Mw=68000g/mol、PDI=2.12。
[実施例7]
Monomer S (100 mg, 68.3 μmol) and 4,7-bis(5-bromo-4-octyl-thiophen-2-yl)-5,6-bis(n-octyloxy)-2,1,3-benzo A mixture of thiadiazole (64.2 mg, 68.3 μmol) and tetralin (2.0 mL) was bubbled with argon for 30 minutes. Pd 2 (dba) 3 .CHCl 3 (1.4 mg, 1.4 μmol) and tri(o-tolyl)phosphine (1.7 mg, 5.5 μmol) were added to this mixed solution and heated to 180 using a microwave reactor. C. for 2 hours. After the obtained mixture was cooled to room temperature, it was precipitated in a mixed solution of methanol/concentrated hydrochloric acid (150 mL/10 mL), and the precipitated solid was filtered. The obtained solid was subjected to Soxhlet extraction using methanol, acetone, hexane and chloroform to remove components soluble in these solvents. Furthermore, the filter residue was dissolved in monochlorobenzene. An aqueous solution of sodium N,N-diethyldithiocarbamate (1 g/100 mL) was added to the mixture, and the mixture was stirred at 60° C. for 2 hours, and the organic layer was washed with water. This operation was performed twice in total. Furthermore, an aqueous solution of sodium N,N-diethyldithiocarbamate (1 g/100 mL) was added to the organic layer and the mixture was stirred at room temperature for 24 hours. The organic layer was washed with water and filtered through celite. Thereafter, an aqueous potassium fluoride solution (0.5 g/100 mL) was added to the mixture, and the mixture was stirred at room temperature for 20 hours, and the organic layer was washed with water and filtered through celite. This operation was performed 3 times in total. The obtained mixture was concentrated under reduced pressure, and the solid precipitated in methanol was filtered. The resulting solid was washed with methanol and dried under reduced pressure at 90° C. to obtain black solid (3-45) (64.1 mg, 49%).
GPC (TCB, 140° C.): Mn=32000 g/mol, Mw=68000 g/mol, PDI=2.12.
[Example 7]
モノマーS(84.2mg,57.5μmol)と4,7-ビス(5-ブロモ-4-オクチル-チオフェン-2-イル)-5,6-ビス(n-オクチルオキシ)-2,1,3-ベンゾチアジアゾール(54.0mg,57.5μmol)ならびにテトラリン(2.3mL)の混合物を30分間アルゴンバブリングした。この混合溶液に、Pd2(dba)3・CHCl3(1.2mg,1.1μmol)とトリ(o-トリル)ホスフィン(1.4mg,4.6μmol)を加えてマイクロウェーブリアクターを用いて180℃で2時間撹拌した。その後、反応溶液に2-(トリブチルスタンニル)チオフェン(0.16mL,193mg,0.517mmol)を加えてマイクロウェーブリアクターを用いて180℃で10分撹拌した。さらに、2-ブロモチオフェン(0.055mL,94mg,0.575mmol)を加えてマイクロウェーブリアクターを用いて180℃で10分撹拌した。得られた混合物を室温まで冷やしたのちにメタノール/濃塩酸の混合溶液(150mL/10mL)に沈殿させることで析出した固体をろ過した。得られた固体をメタノール、アセトン、ヘキサンおよびクロロホルムを用いてソックスレー抽出にてこれらの溶媒に可溶な成分を除去した。さらに、フィルター残さをモノクロロベンゼンに溶解させた。この混合物にN,N-ジエチルジチオカルバミド酸ナトリウム水溶液(1g/100mL)を加えて60℃で2時間撹拌し、有機層を水で洗浄した。この操作を計2回行った。さらに、有機層にN,N-ジエチルジチオカルバミド酸ナトリウム水溶液(1g/100mL)を加えて室温で24時間撹拌し、有機層を水で洗浄したのちにセライトろ過を行った。その後、この混合物にフッ化カリウム水溶液(0.5g/100mL)を加えて室温で20時間撹拌し、有機層を水で洗浄したのちにセライトろ過を行った。この操作を計3回行った。得られた混合物を減圧下で濃縮し、メタノールに沈殿させることで析出した固体をろ過した。得られた固体をメタノールで洗浄したのちに90℃で減圧乾燥することで黒色固体の(3-45)を得た(45mg,41%)。
GPC(TCB,140℃):Mn=22000g/mol、Mw=46000g/mol、PDI=2.09。
[実施例8]
Monomer S (84.2 mg, 57.5 μmol) and 4,7-bis(5-bromo-4-octyl-thiophen-2-yl)-5,6-bis(n-octyloxy)-2,1,3 - A mixture of benzothiadiazole (54.0 mg, 57.5 μmol) and tetralin (2.3 mL) was bubbled with argon for 30 minutes. Pd 2 (dba) 3 .CHCl 3 (1.2 mg, 1.1 μmol) and tri(o-tolyl)phosphine (1.4 mg, 4.6 μmol) were added to this mixed solution and heated to 180 using a microwave reactor. C. for 2 hours. After that, 2-(tributylstannyl)thiophene (0.16 mL, 193 mg, 0.517 mmol) was added to the reaction solution and stirred at 180° C. for 10 minutes using a microwave reactor. Furthermore, 2-bromothiophene (0.055 mL, 94 mg, 0.575 mmol) was added and stirred at 180° C. for 10 minutes using a microwave reactor. After the obtained mixture was cooled to room temperature, it was precipitated in a mixed solution of methanol/concentrated hydrochloric acid (150 mL/10 mL), and the precipitated solid was filtered. The obtained solid was subjected to Soxhlet extraction using methanol, acetone, hexane and chloroform to remove components soluble in these solvents. Furthermore, the filter residue was dissolved in monochlorobenzene. An aqueous solution of sodium N,N-diethyldithiocarbamate (1 g/100 mL) was added to the mixture, and the mixture was stirred at 60° C. for 2 hours, and the organic layer was washed with water. This operation was performed twice in total. Furthermore, an aqueous solution of sodium N,N-diethyldithiocarbamate (1 g/100 mL) was added to the organic layer and the mixture was stirred at room temperature for 24 hours. The organic layer was washed with water and filtered through celite. Thereafter, an aqueous potassium fluoride solution (0.5 g/100 mL) was added to the mixture, and the mixture was stirred at room temperature for 20 hours, and the organic layer was washed with water and filtered through celite. This operation was performed 3 times in total. The obtained mixture was concentrated under reduced pressure, and the solid precipitated in methanol was filtered. The obtained solid was washed with methanol and dried under reduced pressure at 90° C. to obtain black solid (3-45) (45 mg, 41%).
GPC (TCB, 140° C.): Mn=22000 g/mol, Mw=46000 g/mol, PDI=2.09.
[Example 8]
モノマーS(100mg,68.3μmol)と4,7-ビス(5-ブロモ-4-ヘキシル-チオフェン-2-イル)-5,6-ビス(n-ヘキシルオキシ)-2,1,3-ベンゾチアジアゾール(56.5mg,68.3μmol),2-(トリブチルスタンニル)チオフェン(0.65μL,760μg,2.0μmol),2-ブロモチオフェン(0.20μL,330μg,2.0μmol)ならびにテトラリン(2.0mL)の混合物を30分間アルゴンバブリングした。この混合溶液に、Pd2(dba)3・CHCl3(1.4mg,1.4μmol)とトリ(o-トリル)ホスフィン(1.7mg,5.5μmol)を加えてマイクロウェーブリアクターを用いて180℃で2時間撹拌した。その後、反応溶液に2-(トリブチルスタンニル)チオフェン(0.20mL,230mg,0.61mmol)を加えてマイクロウェーブリアクターを用いて180℃で10分撹拌した。さらに、2-ブロモチオフェン(0.065mL,110mg,0.68mmol)を加えてマイクロウェーブリアクターを用いて180℃で10分撹拌した。得られた混合物を室温まで冷やしたのちにメタノール/濃塩酸の混合溶液(150mL/10mL)に沈殿させることで析出した固体をろ過した。得られた固体をメタノール、アセトン、ヘキサン、デカン、ドデカン、クロロホルムを用いてソックスレー抽出にてこれらの溶媒に可溶な成分を除去した。さらに、フィルター残さをモノクロロベンゼンに溶解させた。この混合物にN,N-ジエチルジチオカルバミド酸ナトリウム水溶液(1g/100mL)を加えて60℃で2時間撹拌し、有機層を水で洗浄した。この操作を計2回行った。さらに、有機層にN,N-ジエチルジチオカルバミド酸ナトリウム水溶液(1g/100mL)を加えて室温で24時間撹拌し、有機層を水で洗浄したのちにセライトろ過を行った。その後、この混合物にフッ化カリウム水溶液(0.5g/100mL)を加えて室温で20時間撹拌し、有機層を水で洗浄したのちにセライトろ過を行った。この操作を計3回行った。得られた混合物を減圧下で濃縮し、メタノールに沈殿させることで析出した固体をろ過した。得られた固体をメタノールで洗浄したのちに90℃で減圧乾燥することで黒色固体の(3-138)を得た(34mg,25%)。
GPC(THF):Mn=23000g/mol、Mw=439000g/mol、PDI=19.1。
GPC(TCB,140℃):Mn=10000g/mol、Mw=14000g/mol、PDI=1.40。
[実施例9]
実施例1で合成した共役系高分子(3-29)の0.5wt%o-DCB溶液をグローブボックス中、窒素雰囲気下で加熱調製することで有機薄膜の成膜用組成物を得た。
Monomer S (100 mg, 68.3 μmol) and 4,7-bis(5-bromo-4-hexyl-thiophen-2-yl)-5,6-bis(n-hexyloxy)-2,1,3-benzo Thiadiazole (56.5 mg, 68.3 μmol), 2-(tributylstannyl)thiophene (0.65 μL, 760 μg, 2.0 μmol), 2-bromothiophene (0.20 μL, 330 μg, 2.0 μmol) and tetralin (2 .0 mL) of the mixture was bubbled with argon for 30 minutes. Pd 2 (dba) 3 .CHCl 3 (1.4 mg, 1.4 μmol) and tri(o-tolyl)phosphine (1.7 mg, 5.5 μmol) were added to this mixed solution and heated to 180 using a microwave reactor. C. for 2 hours. After that, 2-(tributylstannyl)thiophene (0.20 mL, 230 mg, 0.61 mmol) was added to the reaction solution and stirred at 180° C. for 10 minutes using a microwave reactor. Furthermore, 2-bromothiophene (0.065 mL, 110 mg, 0.68 mmol) was added and stirred at 180° C. for 10 minutes using a microwave reactor. After the obtained mixture was cooled to room temperature, it was precipitated in a mixed solution of methanol/concentrated hydrochloric acid (150 mL/10 mL), and the precipitated solid was filtered. The obtained solid was subjected to Soxhlet extraction using methanol, acetone, hexane, decane, dodecane and chloroform to remove components soluble in these solvents. Furthermore, the filter residue was dissolved in monochlorobenzene. An aqueous solution of sodium N,N-diethyldithiocarbamate (1 g/100 mL) was added to the mixture, and the mixture was stirred at 60° C. for 2 hours, and the organic layer was washed with water. This operation was performed twice in total. Furthermore, an aqueous solution of sodium N,N-diethyldithiocarbamate (1 g/100 mL) was added to the organic layer and the mixture was stirred at room temperature for 24 hours. The organic layer was washed with water and filtered through celite. After that, an aqueous potassium fluoride solution (0.5 g/100 mL) was added to the mixture, and the mixture was stirred at room temperature for 20 hours. The organic layer was washed with water and then filtered through celite. This operation was performed 3 times in total. The obtained mixture was concentrated under reduced pressure, and the solid precipitated in methanol was filtered. The obtained solid was washed with methanol and dried under reduced pressure at 90° C. to obtain black solid (3-138) (34 mg, 25%).
GPC (THF): Mn = 23000 g/mol, Mw = 439000 g/mol, PDI = 19.1.
GPC (TCB, 140° C.): Mn=10000 g/mol, Mw=14000 g/mol, PDI=1.40.
[Example 9]
A 0.5 wt % o-DCB solution of the conjugated polymer (3-29) synthesized in Example 1 was heated in a glove box under a nitrogen atmosphere to obtain a composition for forming an organic thin film.
室温に冷却後、0.22μmのフィルターで濾過されたことから溶液状態が保持されており成膜に適した化合物であることを確認した。 After cooling to room temperature, it was filtered through a 0.22 μm filter, so it was confirmed that the compound was kept in a solution state and suitable for film formation.
ガラス基板上に下地層としてパリレンCをCVD法により成膜したのち、該パリレンC層にチャネル長100μm、チャネル幅500μmのシャドウマスクを置き、真空下、金を蒸着することでソース及びドレイン電極を付設した。上述した溶液をグローブボックス中、窒素下でスピンコートした。これを150℃に加熱し、15分間保持することで(3-29)の有機薄膜を作成した。ゲート絶縁膜としてパリレンCをCVD法により成膜したのちに蒸着法で銀電極を作成し、トップゲート-ボトムコンタクト型の有機薄膜トランジスタ素子を作成した(ゲート電極は銀、ゲート絶縁層はパリレンC、ソース電極は金、ドレイン電極は金)。 After forming a parylene C film as a base layer on a glass substrate by a CVD method, a shadow mask having a channel length of 100 μm and a channel width of 500 μm was placed on the parylene C layer, and gold was vapor-deposited under vacuum to form source and drain electrodes. Attached. The above solution was spin-coated under nitrogen in a glovebox. This was heated to 150° C. and held for 15 minutes to prepare an organic thin film (3-29). After forming a parylene C film as a gate insulating film by a CVD method, a silver electrode was prepared by a vapor deposition method to prepare a top gate-bottom contact type organic thin film transistor element (gate electrode is silver, gate insulating layer is parylene C, gold for the source electrode and gold for the drain electrode).
大気下、該有機薄膜トランジスタ素子を半導体パラメーターアナライザー(ケースレー製、4200-SCS)に接続し、ドレイン電圧(Vd=-100V)で、ゲート電圧(Vg)を+10~-100Vまで1V刻みで走査し、伝達特性を評価した。該有機薄膜トランジスタ素子はp型特性を示し、その正孔のキャリア移動度は0.20cm2/Vsであった。150℃で15分間アニール処理したのちの正孔のキャリア移動度は0.22cm2/Vsであった。熱処理後もキャリア移動度が低下しないことから高耐熱性を有していることを確認した。
[参考例1]
Under the atmosphere, the organic thin film transistor element was connected to a semiconductor parameter analyzer (4200-SCS manufactured by Keithley), and the drain voltage (Vd = -100 V) and the gate voltage (Vg) were scanned from +10 to -100 V in increments of 1 V, The transfer characteristics were evaluated. The organic thin film transistor device exhibited p-type characteristics, and its hole carrier mobility was 0.20 cm 2 /Vs. After annealing at 150° C. for 15 minutes, the hole carrier mobility was 0.22 cm 2 /Vs. It was confirmed that the material had high heat resistance because the carrier mobility did not decrease even after the heat treatment.
[Reference example 1]
(ref1)から(ref2)を特開2020-111737号公報を参考に合成した。
[比較例]
実施例9と同じ操作を繰り返して、(ref1)から(ref2)を用い、有機薄膜トランジスタ素子を作成した。キャリア移動度を表1に示した。
(ref1) to (ref2) were synthesized with reference to JP-A-2020-111737.
[Comparative example]
By repeating the same operation as in Example 9, using (ref1) to (ref2), an organic thin film transistor element was produced. Table 1 shows the carrier mobility.
本発明により提供される共役系高分子は、高いキャリア移動度を与えるとともに溶媒への溶解性及び耐熱性に優れることから有機薄膜トランジスタ素子、並びに有機薄膜太陽電池に代表される半導体デバイス材料としての適用が期待される。 Since the conjugated polymer provided by the present invention provides high carrier mobility and has excellent solubility in solvents and heat resistance, it is applied as a semiconductor device material represented by organic thin film transistor elements and organic thin film solar cells. There is expected.
(A):ボトムゲート-トップコンタクト型有機薄膜トランジスタ
(B):ボトムゲート-ボトムコンタクト型有機薄膜トランジスタ
(C):トップゲート-トップコンタクト型有機薄膜トランジスタ
(D):トップゲート-ボトムコンタクト型有機薄膜トランジスタ
1:有機半導体層
2:基板
3:ゲート電極
4:ゲート絶縁層
5:ソース電極
6:ドレイン電極
(A): Bottom gate-top contact organic thin film transistor (B): Bottom gate-bottom contact organic thin film transistor (C): Top gate-top contact organic thin film transistor (D): Top gate-bottom contact organic thin film transistor 1: Organic semiconductor layer 2: substrate 3: gate electrode 4: gate insulating layer 5: source electrode 6: drain electrode
Claims (7)
で表される2価の構造単位と
下記一般式(2)
で表される2価の構造単位とより構成される共役系高分子。 General formula (1) below
and a divalent structural unit represented by the following general formula (2)
A conjugated polymer composed of a divalent structural unit represented by
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