JP2023056465A - Phosphor device and light emitting apparatus - Google Patents

Abstract

To provide a phosphor device and the like that can improve the heat dissipation property of heat generated in a fluorescent portion and prevent the occurrence of peeling at the interface between two adjacent members.SOLUTION: A phosphor device 1 includes a substrate member 10, and a wavelength conversion member 20 having at least a fluorescent portion 21 and a light reflection portion 22. The fluorescent portion 21 and the substrate member 10 are bonded via a transparent adhesive layer 30 having flexibility in a state after bonding. The main component of the fluorescent portion 21 is phosphor ceramic. The thickness of the fluorescent portion 21 is 200 μm or more. Of the fluorescent portion 21 and the substrate member 10, the smaller linear expansion coefficient value of linear expansion coefficients is 97% or less of the larger linear expansion coefficient value of the linear expansion coefficients.SELECTED DRAWING: Figure 1

Description

The present invention relates to a phosphor device and a light-emitting device using the phosphor device.

2. Description of the Related Art Light-emitting devices using solid-state light-emitting elements such as LEDs or semiconductor lasers as light sources are used in projectors, endoscopes, in-vehicle headlamps, lighting devices, liquid crystal display devices, and the like. A light-emitting device of this type includes, for example, a light source and a phosphor device that emits fluorescence by using light emitted by the light source as excitation light. In this case, a semiconductor laser is used as a light source because high brightness is required for a light emitting device used in a projector or an endoscope.

As this type of phosphor device, Patent Document 1 discloses an optical component that includes a light-transmitting member and a wavelength conversion member having a fluorescent portion and a light-reflecting portion disposed on the light-transmitting member. . In the optical component disclosed in Patent Document 1, a space is provided between the fluorescent portion of the wavelength conversion member and the translucent member.

Japanese Patent Application Laid-Open No. 2019-53130

In a phosphor device, light of a predetermined color is emitted from the fluorescent portion when the fluorescent portion is irradiated with excitation light. At this time, the fluorescent portion generates heat by being irradiated with the excitation light. In particular, the temperature of the portion of the fluorescent portion on the light incident side becomes high.

However, in the phosphor device disclosed in Patent Literature 1, a space is provided between the high-temperature portion of the fluorescent portion and the translucent member, so heat dissipation from the fluorescent portion is poor. As a result, the luminous efficiency of the fluorescent portion is lowered, and the efficiency and brightness of the phosphor device are lowered.

Therefore, it is conceivable to eliminate the space between the fluorescent portion and the light-transmitting member and join the fluorescent portion and the light-transmitting member. When the portion and the translucent member are directly bonded, due to the difference in linear expansion coefficient (coefficient of linear expansion) between the fluorescent portion and the translucent member and the thickness of these members, the interface between the fluorescent portion and the translucent member becomes Delamination may occur. Moreover, if the laminated structure of rigid members is used, peeling may occur at the interface between members other than the interface between the fluorescent portion and the translucent member. That is, in a phosphor device, there is a possibility that delamination may occur at any interface between two adjacent members.

The present invention has been made in view of such problems, and is capable of improving the heat dissipation property of the heat generated in the fluorescent part and suppressing the occurrence of peeling at the interface between two adjacent members. An object of the present invention is to provide a body device and a light emitting device.

In order to achieve the above object, one aspect of the phosphor device according to the present invention includes a substrate member and a wavelength conversion member having at least a fluorescent portion and a light reflecting portion, wherein the main component of the fluorescent portion is fluorescent light. The fluorescent portion has a thickness of 200 μm or more, and the fluorescent portion and the substrate member have a smaller linear expansion coefficient than the larger linear expansion coefficient. It is 97% or less of the value of the coefficient, and the fluorescent portion and the substrate member are adhered via a transparent adhesive layer having flexibility in the state after adhesion.

Further, one aspect of the light-emitting device according to the present invention includes the above-described phosphor device and a light source for emitting light incident on the phosphor device, and the outer size of the phosphor portion in the phosphor device is the above-described phosphor device. It is equivalent to the spot size when the light emitted from the light source is incident on the fluorescent portion.

It is possible to improve the heat radiation property of the heat generated in the fluorescent portion, and to suppress the occurrence of peeling at the interface between two adjacent members.

FIG. 1 is a diagram showing the configuration of a phosphor device according to Embodiment 1. FIG. FIG. 2 is a diagram showing the configuration of the light-emitting device according to Embodiment 1. FIG. FIG. 3A is a diagram showing the configuration of a conventional phosphor device. FIG. 3B is a diagram for explaining how excitation light enters a conventional phosphor device. 4 is a diagram showing the relationship between the thickness of the fluorescent portion and the chromaticity in the phosphor device according to Embodiment 1. FIG. 5 is a cross-sectional view of a phosphor device according to a modification of Embodiment 1. FIG. FIG. 6A is a diagram showing specifications of a structural analysis model of a phosphor device according to a modification of Embodiment 1 when simulating stress relaxation effects of a transparent adhesive layer and a bonding layer. FIG. 6B is a diagram showing stress calculation results for four samples of phosphor devices according to the modification of Embodiment 1 in the specifications of FIG. 6A. 7A is a diagram showing specifications of a thermal analysis model of a phosphor device according to a modification of Embodiment 1 when simulating the heat dissipation effect of a phosphor portion by a bonding layer; FIG. FIG. 7B is a diagram showing the calculation results of the temperature rise of the fluorescent portion for three samples of the phosphor device according to the modified example of Embodiment 1 in the specifications of FIG. 7A. FIG. 8 is a diagram showing specifications of a structural analysis model of the phosphor device according to the modification of the first embodiment when analyzing the relationship between Young's modulus and thickness in the transparent adhesive layer by simulation. FIG. 9A is a diagram showing the relationship between the principal stress acting on the fluorescent portion and the Young's modulus of the transparent adhesive layer when structural analysis is performed according to the specifications of FIG. FIG. 9B is a diagram showing the relationship between the principal stress acting on the substrate member and the Young's modulus of the transparent adhesive layer when structural analysis is performed according to the specifications of FIG. FIG. 9C is a diagram showing the relationship between the equivalent stress acting on the transparent adhesive layer and the Young's modulus of the transparent adhesive layer when structural analysis is performed according to the specifications of FIG. FIG. 10 is a diagram showing specifications of a thermal analysis model of the phosphor device according to the modification of the first embodiment when analyzing the relationship between the thickness of the transparent adhesive layer and the temperature of the fluorescent portion and the transparent adhesive layer by simulation. be. FIG. 11A is a diagram showing the relationship between the thickness of the transparent adhesive layer and the temperatures of the fluorescent portion and the transparent adhesive layer when thermal analysis is performed according to the specifications of FIG. FIG. 11B is a diagram showing the relationship between the thermal resistance of the transparent adhesive layer and the temperatures of the fluorescent portion and the transparent adhesive layer when thermal analysis is performed according to the specifications of FIG. FIG. 12 is a diagram showing the configuration of a phosphor device according to Embodiment 2. FIG. 13 is a cross-sectional view of a phosphor device according to a modification of Embodiment 2. FIG. FIG. 14A is a diagram showing experimental results for confirming the heat dissipation effect of a light reflecting portion having a side-fill structure. FIG. 14B is a diagram showing the five levels of temperature rise in FIG. 14A.

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below. It should be noted that each of the embodiments described below is a preferred specific example of the present invention. Therefore, the numerical values, shapes, materials, constituent elements, arrangement positions and connection forms of the constituent elements, etc. shown in the following embodiments are examples and are not intended to limit the present invention. Therefore, among the constituent elements in the following embodiments, constituent elements that are not described in independent claims representing the highest level concept of the present invention will be described as optional constituent elements.

Each figure is a schematic diagram and is not necessarily strictly illustrated. In addition, in each figure, the same code|symbol is attached|subjected to the substantially same structure, and the overlapping description is abbreviate|omitted or simplified. Moreover, in this specification, the coefficient of linear expansion and the coefficient of linear expansion are synonymous.

(Embodiment 1)
First, the configuration of phosphor device 1 according to Embodiment 1 will be described with reference to FIG. FIG. 1 is a diagram showing the configuration of a phosphor device 1 according to Embodiment 1. FIG. In FIG. 1, (a) is a top view of the same phosphor device 1, and (b) is a cross-sectional view of the same phosphor device 1 along line Ib-Ib of (a).

As shown in FIG. 1, phosphor device 1 according to Embodiment 1 includes substrate member 10 and wavelength conversion member 20 . The substrate member 10 and the wavelength conversion member 20 are adhered via a transparent adhesive layer 30 .

The substrate member 10 has a translucent base material 11 and a dielectric multilayer film 12 and an antireflection film 13 provided on the translucent base material 11 . Further, the wavelength conversion member 20 has at least a fluorescence portion 21 that emits fluorescence and a light reflection portion 22 that reflects light.

The translucent base material 11 of the substrate member 10 is a translucent substrate, and has a first surface 11a (upper surface) that is the surface on the wavelength conversion member 20 side and a second surface that faces the first surface 11a. and a surface 11b (lower surface).

The translucent base material 11 is preferably a substrate having a high light transmittance. Specifically, the translucent base material 11 is preferably a transparent substrate having high transmittance so that the other side can be seen through. Moreover, as the translucent base material 11, it is preferable that it is a board|substrate with high heat resistance. As such a transparent substrate, an alumina substrate made of Al ₂ O ₃ , an aluminum nitride substrate made of AlN, or a gallium nitride substrate made of GaN can be used. In this case, the main component of the material forming the translucent substrate 11 is Al ₂ O ₃ , AlN, or GaN. Moreover, the transparent substrate having high heat resistance and high light transmittance is not limited to these transparent substrates, and may be a transparent substrate such as a sapphire substrate or a glass substrate. As an example, the shape of the translucent base material 11 is a rectangular thin plate of 7.5 mm long×7.5 mm wide×0.6 mm thick.

The sapphire substrate has a Young's modulus of 470 GPa and a linear expansion coefficient of 7.7×10 ⁻⁶ /K. The aluminum nitride substrate has a Young's modulus of 320 GPa and a linear expansion coefficient of 4.6×10 ⁻⁶ /K. A gallium nitride substrate has a Young's modulus of about 200 GPa and a linear expansion coefficient of 5.5×10 ⁻⁶ /K.

The dielectric multilayer film 12 is provided on the first surface 11 a of the translucent base material 11 . In this embodiment, the dielectric multilayer film 12 is a surface film that is the uppermost layer of the substrate member 10 .

The dielectric multilayer film 12 has a structure in which a plurality of dielectric films are laminated, and reflects specific light and transmits other specific light. Dielectric multilayer film 12 in the present embodiment reflects light emitted by the phosphor of fluorescent portion 21 of wavelength conversion member 20 and transmits excitation light incident on phosphor device 1 . For example, when the fluorescent portion 21 is made of a yellow fluorescent substance and the excitation light incident on the fluorescent device 1 is ultraviolet light or blue light, the dielectric multilayer film 12 reflects at least the yellow light emitted by the fluorescent portion 21. and transmit ultraviolet light or blue light, which is excitation light.

By providing the dielectric multilayer film 12 on the side of the first surface 11 a of the translucent base material 11 (on the side of the wavelength conversion member 20 ) in this way, the light emitted by the fluorescent portion 21 of the wavelength conversion member 20 reaches the substrate member 10 . The directed light can be reflected by the dielectric multilayer film 12 . This makes it possible to increase the light of the fluorescent portion 21 that can be extracted from the phosphor device 1 .

The antireflection film 13 is provided on the second surface 11 b of the translucent base material 11 . In this embodiment, the antireflection film 13 is a surface film that is the bottom layer of the substrate member 10 .

The antireflection film 13 may be either a single layer film or a multilayer film. As an example, the antireflection film 13 includes silicon oxide (SiO ₂ ), titanium oxide (TiO ₂ ), niobium oxide (Nb ₂ O ₅ ), tantalum oxide (Ta ₂ O ₅ ), aluminum oxide (Al ₂ O ₃ ), It is a multilayer film in which at least two types of dielectric films such as aluminum nitride (AlN) are laminated.

By providing the antireflection film 13 on the second surface 11b of the translucent substrate 11 in this way, the reflection of the light incident on the phosphor device 1 from the second surface 11b side of the translucent substrate 11 can be prevented. can be suppressed. Thereby, the light incident on the light-transmitting base material 11 from the second surface 11b side of the light-transmitting base material 11 can be efficiently taken into the light-transmitting base material 11 . Specifically, the excitation light incident on the phosphor device 1 to cause the fluorescent portion 21 to emit fluorescence can be efficiently taken into the translucent base material 11 .

The fluorescent portion 21 of the wavelength conversion member 20 is a light-emitting layer that emits light, and is excited by excitation light to emit fluorescent light of a predetermined wavelength in the visible region. As an example, the fluorescent part 21 is a yellow phosphor layer made of a yellow phosphor. In this case, the fluorescent portion 21, which is a yellow fluorescent layer, emits fluorescence by using light having a shorter wavelength than yellow light (for example, ultraviolet light to blue light) as excitation light. That is, the yellow phosphor layer converts the wavelength of the excitation light into yellow light having a longer wavelength than the excitation light.

The fluorescent portion 21 is a fluorescent layer made of only fluorescent material. Specifically, the fluorescent portion 21 is a fluorescent ceramic layer composed of a sintered single crystal phase fluorescent material, and the main component is the fluorescent ceramic. By using the phosphor ceramic layer as the phosphor part 21 in this manner, heat resistance and heat dissipation can be improved. Further, by using a phosphor ceramic layer as the fluorescent portion 21, light loss due to scattering of fluorescent light can be suppressed, so that the conversion efficiency of the fluorescent portion can be improved. In this embodiment, the fluorescent portion 21 is a fluorescent ceramic layer consisting of only a single crystal phase.

In addition, the fluorescent part 21 may be a fluorescent material layer in which the fluorescent material is bonded by sealing with a binder (bonding agent). Specifically, the fluorescent part 21 may be a fluorescent ceramic layer in which the fluorescent material is combined with a ceramic sintered body (single crystal, refractive index of about 1.8) made of ceramic such as alumina. By using the phosphor ceramic layer as the phosphor part 21 in this manner, heat resistance and heat dissipation can be improved. The fluorescent portion 21 may be a fluorescent ceramic layer made of a single crystal. When the phosphor layer 21 is a single-crystal phosphor layer, the phosphor layer 21 does not contain air, so the phosphor layer 21 has good thermal conductivity.

Fluorescent portion 21 includes a first crystal phase having a garnet structure. More specifically, in the present embodiment, fluorescent portion 21 is composed only of the first crystal phase having a garnet structure. In other words, fluorescent portion 21 according to the present embodiment does not contain a crystal phase having a structure different from the garnet structure. A garnet structure is a crystal structure represented by the general formula A ₃ B ₂ C ₃ O ₁₂ . Element A includes rare earth elements such as Ca, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb and Lu, and element B includes Mg, Al, Si, Ga and Sc. Elements are applied, element C being elements such as Al, Si and Ga. Such garnet structures include YAG (yttrium aluminum garnet), LuAG (lutetium aluminum garnet), Lu ₂ CaMg ₂ Si ₃ O ₁₂ (lutetium calcium magnesium Silicon garnet (Lutetium Calcium Magnesium Silicon Garnet) and TAG (Terbium Aluminum Garnet). In the present embodiment, the material of the phosphor constituting the phosphor portion 21 is (Y _1-x Ce _x ) ₃ Al ₂ Al ₃ O ₁₂ (that is, (Y _1-x Ce _x ) ₃ Al ₅ O ₁₂ ). The crystal phase represented by (0.00001≦x<0.1), ie, YAG, is used, and the fluorescent portion 21 is a phosphor ceramic layer made of sintered YAG only. Specifically, the phosphor section 21 is a yellow phosphor layer made of YAG phosphor. When the fluorescent portion 21 is a YAG fluorescent material, the fluorescent portion 21 has a Young's modulus of approximately 230 GPa to approximately 290 GPa and a coefficient of linear expansion of approximately 8×10 ⁻⁶ /K to approximately 9.2×10 ⁻⁶ /K. be.

The first crystal phase forming the fluorescent portion 21 may be a solid solution of a plurality of garnet crystal phases with different chemical compositions. Such a solid solution includes a garnet crystal phase represented by (Y _1-x Ce _x ) ₃ Al ₂ Al ₃ O ₁₂ (0.00001≦x<0.1) and (Lu _1-d Ce _d ) _{3 A solid solution ((1-a)(Y1- xCex ) 3Al5O12 · a ( Lu 1-d} Ce _d ) ₃ Al ₂ Al ₃ O ₁₂ (0<a<1)). Further, such a solid solution includes a garnet crystal phase represented by (Y _1-x Ce _x ) ₃ Al ₂ Al ₃ O ₁₂ (0.00001≦x<0.1) and (Lu _1-z Ce _z ) ₂ CaMg ₂ Si ₃ O ₁₂ (0.00001≦z<0.15) with a garnet crystal phase ((1-b)(Y _{1-x Cex} ) ₃ Al ₂ Al ₃ O ₁₂ ·b(Lu _{1-zCe z} ) ₂ CaMg ₂ Si ₃ O ₁₂ (0<b<1)) and the like. Since the fluorescent portion 21 is composed of a solid solution of a plurality of garnet crystal phases with different chemical compositions, the fluorescence spectrum of the fluorescence emitted by the fluorescent portion 21 is broadened, and the green light component and the red light component increase. Therefore, it is possible to provide a phosphor device that emits output light with a wide color gamut.

Further, the first crystal phase constituting the fluorescent portion 21 may contain a crystal phase whose chemical composition is different from the crystal phase represented by the general formula A ₃ B ₂ C ₃ O ₁₂ described above. . _{As such} a _{crystal phase ,} an Al-rich ( _{Y 1 −x} Ce _x ) ₃ Al _2+δ Al ₃ O ₁₂ (δ is a positive number). In addition, _{as such a} crystal phase, _a Y _- rich ₍ Y _1−x Ce _x ) _3+ζ Al ₂ Al ₃ O ₁₂ (ζ is a positive number) and the like. These crystal phases have chemical compositions different from those of the crystal phase represented by the general formula A ₃ B ₂ C ₃ O ₁₂ , but maintain the garnet structure. When the fluorescent portion 21 is composed of a crystal phase with a different chemical composition, regions with different refractive indices are generated in the fluorescent portion 21, so that the excitation light and fluorescence are more scattered, and the light emitting area of the fluorescent portion 21 is increased. become smaller. Therefore, a phosphor device with smaller etendue and higher light utilization efficiency can be provided.

Furthermore, the fluorescent portion 21 may contain the first crystal phase and a different phase having a structure other than the garnet structure. When the fluorescent portion 21 is composed of such a first crystal phase and a different phase, a region having a different refractive index is generated in the fluorescent portion 21, so that the excitation light and fluorescence are more scattered, and the light emitting area of the fluorescent portion 21 is reduced. becomes smaller. Therefore, a phosphor device with smaller etendue and higher light utilization efficiency can be provided.

The density of the fluorescent portion 21 should be 95% or more and 100% or less of the theoretical density, and more preferably 97% or more and 100% or less of the theoretical density. Here, the theoretical density is the density when the atoms in the layer are ideally arranged. In other words, the theoretical density is the density when it is assumed that there are no voids in the fluorescent portion 21, and is a value calculated using the crystal structure. For example, when the density of the fluorescent portion 21 is 99%, the remaining 1% corresponds to voids. That is, the higher the density of the fluorescent portion 21, the smaller the voids. When the density of the fluorescent portion 21 is within the above range, the total amount of fluorescence emitted by the fluorescent portion 21 increases, so that a phosphor device that emits a larger amount of light can be provided.

The density of the fluorescent portion 21 should be 4.32 g/cm ³ or more and 4.55 g/cm ³ or less, and more preferably 4.41 g/cm ³ or more and 4.55 g/cm ³ or less. As shown in the present embodiment, when the fluorescent portion 21 is made of YAG and the density of the fluorescent portion 21 is within the above range, the density of the fluorescent portion 21 is 95% or more and 100% or less of the theoretical density. 97% or more and 100% or less. When the density of the fluorescent portion 21 is within the above range, the excitation light absorbed by the fluorescent portion 21 can be efficiently converted into fluorescent light. That is, the fluorescent portion 21 with high luminous efficiency is realized.

Although the top view shape of the fluorescence part 21 is a rectangular shape, it is not limited to this. The top view shape of the fluorescent part 21 may be circular. Moreover, the thickness of the fluorescent portion 21 is preferably set to a thick film thickness of 200 μm or more. As a result, it is possible to ensure the heat dissipation from the side surface of the fluorescent portion 21 and to suppress the chromaticity shift due to the detection angle to stabilize the chromaticity of the fluorescent portion 21 . In addition, although the thickness of the fluorescent part 21 is constant, it is not limited to this. As an example, the shape of the fluorescent portion 21 is a rectangular thin plate having a length of 1.1 mm, a width of 1.1 mm, and a thickness of 0.4 mm.

The light reflecting portion 22 of the wavelength converting member 20 is provided around the fluorescent portion 21 . In the present embodiment, the light reflecting portion 22 surrounds the entire periphery of the fluorescent portion 21 in top view. Specifically, since the fluorescent portion 21 has a rectangular top view shape, the light reflecting portion 22 has a rectangular opening. Specifically, the top view shape of the light reflecting portion 22 is a rectangular frame shape having a rectangular opening and a rectangular outer shape. The top view shape of the light reflecting portion 22 is not limited to a rectangular frame shape, and may be an annular shape or the like. As an example, the outer shape of the light reflecting portion 22 is 7.5 mm long×7.5 mm wide×0.4 mm thick.

The light reflecting portion 22 is in thermal contact with the fluorescent portion 21 . That is, the fluorescent portion 21 and the light reflecting portion 22 are provided so that heat generated in the fluorescent portion 21 can be conducted to the light reflecting portion 22 . In this embodiment, the light reflecting section 22 is physically in contact with the fluorescent section 21 . Specifically, the entire inner peripheral side surface of the light reflecting portion 22 is in contact with the outer peripheral side surface of the fluorescent portion 21 . That is, the fluorescent portion 21 is provided so as to fill the opening of the light reflecting portion 22 .

Although the thickness (height) of the light reflecting portion 22 is the same as the thickness (height) of the fluorescent portion 21, the present invention is not limited to this. That is, the thickness of the light reflecting portion 22 may be less than the thickness of the fluorescent portion 21 or may be greater than the thickness of the fluorescent portion 21 . However, it is preferable that the light reflecting portion 22 is provided so as not to cover the upper surface of the fluorescent portion 21 . In other words, the light reflecting portion 22 is preferably formed so that the material (binder or the like) forming the light reflecting portion 22 does not protrude from the upper surface of the fluorescent portion 21 .

The light reflecting portion 22 is composed of a ceramic layer made of a ceramic material such as alumina, or a resin layer made of a resin material or the like. In the present embodiment, the light reflecting portion 22 is white because it reflects light of wavelengths in the visible light band. That is, the light reflecting portion 22 is a white ceramic layer or a white resin layer.

Inside the light reflecting portion 22, there are numerous light scattering portions 22a for scattering and reflecting light. Specifically, when the light reflecting portion 22 is a ceramic layer, there are numerous voids (air layers) inside the ceramic layer as light scattering portions 22a for scattering and reflecting light. Further, when the light reflecting portion 22 is a resin layer, a large number of light reflecting particles are present inside the resin layer as the light scattering portions 22a for scattering and reflecting light.

Since the fluorescent portion 21 in the present embodiment is a fluorescent ceramic layer made of only a sintered fluorescent material, the light reflecting portion 22 may be a ceramic layer made of ceramic such as alumina. This facilitates integration of the fluorescent portion 21 and the light reflecting portion 22 .

If the fluorescent portion 21 is composed of a YAG fluorescent material and an alumina binder, the light reflecting portion 22 is preferably a ceramic layer composed of alumina. That is, the main component of the light reflecting portion 22 and the binder of the fluorescent portion 21 are preferably made of the same inorganic material. This facilitates integration of the fluorescent portion 21 and the light reflecting portion 22 .

When the light reflecting portion 22 is made of a ceramic sintered body such as alumina, the sintering temperature or the like is controlled so that the light scattering portion is formed inside the ceramic sintered body forming the light reflecting portion 22. A large number of voids can be formed as 22a. As a result, the light incident on the light reflecting portion 22 is scattered at the interface between the ceramics (alumina) and the void. When the light reflecting portion 22 is a ceramic layer made of alumina, the light reflecting portion 22 has a Young's modulus of approximately 280 GPa to approximately 380 GPa and a coefficient of linear expansion of approximately 6×10 ⁻⁶ /K to approximately 10×10 ⁻⁶ /. is K.

On the other hand, when the light reflecting portion 22 is composed of a resin layer made of a resin material, the light reflecting portion 22 is formed by using an insulating resin material made of, for example, a thermosetting resin or a thermoplastic resin as a binder. 22a can be formed by dispersing light reflecting particles for scattering and reflecting light. In this case, silicon resin, phenol resin, epoxy resin, or the like can be used as the insulating resin material forming the light reflecting portion 22 . Further, the light reflecting particles (light scattering portion 22a) dispersed in the insulating resin material include air particles (air layer), SiO ₂ (silica), TiO ₂ , Al ₂ O ₃ , ZrO ₂ , MgO, and the like. can be used. For example, the light reflecting portion 22 of the white resin layer can be formed by applying a paste in which countless light reflecting particles are dispersed in an insulating resin material that serves as a binder and curing the paste. Metal fine particles may be used as the light reflecting particles. When the light reflecting portion 22 is a resin layer made of silicon resin, the light reflecting portion 22 has a Young's modulus of 0.002 GPa and a linear expansion coefficient of 400×10 ⁻⁶ /K.

The substrate member 10 and the fluorescent portion 21 of the wavelength conversion member 20 are adhered by a transparent adhesive layer 30 . In the present embodiment, not only the substrate member 10 and the fluorescent portion 21 are bonded via the transparent adhesive layer 30, but also the substrate member 10 and the light reflecting portion 22 are bonded via the transparent adhesive layer 30. ing.

For example, when the wavelength converting member 20 is formed by integrating the fluorescent portion 21 and the light reflecting portion 22, a liquid transparent adhesive is applied to at least one of the substrate member 10 and the wavelength converting member 20. By curing, the substrate member 10 and the wavelength conversion member 20 can be pasted together with the transparent adhesive. As a result, the cured transparent adhesive is formed as the transparent adhesive layer 30 between the substrate member 10 and the wavelength conversion member 20 . That is, the substrate member 10 , the fluorescent portion 21 and the light reflecting portion 22 are bonded together with the transparent adhesive layer 30 .

The transparent adhesive layer 30 between the substrate member 10 and the wavelength conversion member 20 has flexibility after adhesion. That is, the Young's modulus of the transparent adhesive layer 30 after adhesion (after curing) is a relatively small value. Specifically, the Young's modulus of the transparent adhesive layer 30 is preferably less than 1 GPa, more preferably less than 0.1 GPa, and even less than 0.01 GPa. In particular, since the transparent adhesive layer 30 preferably has rubber elasticity, the Young's modulus of the transparent adhesive layer 30 is preferably 0.001 GPa or more and less than 0.01 GPa. In this embodiment, the transparent adhesive layer 30 is mainly composed of silicon resin. In this case, the Young's modulus of the transparent adhesive layer 30 made of silicone resin is about 0.002 GPa. The resin material forming the transparent adhesive layer 30 is not limited to silicon resin.

The thickness of the transparent adhesive layer 30 is not particularly limited, but is 0.5 μm or more and 50 μm or less. More preferably, the thickness of the transparent adhesive layer 30 is 5 μm or more and 10 μm or less.

The phosphor device 1 configured in this way is composed of a plurality of members having different coefficients of linear expansion (linear expansion coefficients). For example, the coefficient of linear expansion of the fluorescent portion 21 and the coefficient of linear expansion of the substrate member 10 are different. In this case, regarding the fluorescent portion 21 and the substrate member 10, regardless of the combination of materials described above, the value of the coefficient of linear expansion with the smaller coefficient of linear expansion is the value of the coefficient of linear expansion with the larger coefficient of linear expansion. It is 97% or less of the coefficient value.

Next, the configuration of the light-emitting device 100 using the phosphor device 1 according to Embodiment 1 and the optical action of the phosphor device 1 will be described with reference to FIG. FIG. 2 is a diagram showing the configuration of the light emitting device 100 according to Embodiment 1. As shown in FIG.

A light-emitting device 100 according to the present embodiment includes a phosphor device 1 and a light source 2 that emits light incident on the phosphor device 1 .

The light source 2 is an excitation light source that emits excitation light for causing the fluorescent portion 21 of the wavelength conversion member 20 to emit light. The phosphor contained in the fluorescent portion 21 is excited by the excitation light emitted from the light source 2 and emits fluorescence. In the present embodiment, light-emitting device 100 is a transmissive light-emitting device in which excitation light incident on phosphor device 1 is transmitted through phosphor device 1 . That is, the excitation light incident on the phosphor device 1 is transmitted through the wavelength conversion member 20 . Therefore, the light source 2 is arranged such that the light emitted by the light source 2 passes through the phosphor device 1 . Specifically, the light source 2 is arranged below the phosphor device 1 (on the substrate member 10 side).

As the light source 2, for example, a semiconductor laser that emits ultraviolet or blue laser light can be used. Since laser light has excellent rectilinearity, by using a semiconductor laser as the light source 2, the laser light (excitation light) can be incident on the fluorescent portion 21 at a desired incident angle. Note that the light source 2 is not limited to a semiconductor laser, and may be another solid light emitting device such as an LED, or an excitation light source other than a solid light emitting device.

In the light-emitting device 100 configured as described above, light emitted from the light source 2 is incident on the phosphor device 1 , thereby emitting light of a predetermined color from the phosphor device 1 .

Specifically, in the present embodiment, light emitted from light source 2 enters the back surface of substrate member 10 . Light from the light source 2 incident on the substrate member 10 passes through the substrate member 10 and the transparent adhesive layer 30 and reaches the fluorescent portion 21 of the wavelength conversion member 20 . At this time, the external size of the fluorescent portion 21 is preferably equal to the spot size (the spot size of the excitation light) when the light emitted from the light source 2 is incident on the fluorescent portion 21 .

In this embodiment, the excitation light from the light source 2 is blue light, and the fluorescent portion 21 is a yellow fluorescent layer. In this case, blue light from the light source 2 is incident on the fluorescent portion 21 . As a result, the yellow phosphor (YAG phosphor) of the fluorescent portion 21 absorbs part of the blue light from the light source 2, is excited, and emits yellow light as fluorescence. Then, in the fluorescent portion 21 , this yellow light and the blue light from the light source 2 that is not absorbed by the yellow fluorescent material are mixed to form white light, and the fluorescent portion 21 emits white light. That is, white light is extracted from the wavelength conversion member 20 .

At this time, the substrate member 10 is formed with a dielectric multilayer film 12 that reflects the yellow light emitted by the fluorescent portion 21 and transmits the purple-blue light that is the excitation light. With this configuration, of the yellow light emitted from the fluorescent portion 21 , the light directed toward the light source 2 is reflected by the dielectric multilayer film 12 and travels in the opposite direction to the light source 2 .

A white light reflecting portion 22 is formed around the fluorescent portion 21 . With this configuration, of the white light (blue light+yellow light) emitted from the fluorescent portion 21, the light traveling in the horizontal direction is reflected by the light reflecting portion 22, returns to the fluorescent portion 21, and exits the fluorescent portion 21. radiated to the outside. Thereby, the amount of light that can be extracted from the fluorescent portion 21 can be increased.

Further, in the present embodiment, the phosphor device 1 is of a remote phosphor type, and the phosphor device 1 and the light source 2 are spatially separated from each other. As a result, the phosphor device 1 (especially the phosphor section 21 ) can be prevented from being affected by the heat generated by the light source 2 .

In FIG. 2, the light emitted from the light source 2 is vertically incident on the back surface of the substrate member 10, but may be incident obliquely on the back surface of the substrate member 10. FIG.

Next, the operational effects of the phosphor device 1 according to the present embodiment will be described in comparison with the conventional phosphor device 1X, including how one aspect of the present invention was achieved. FIG. 3A is a diagram showing the configuration of a conventional phosphor device 1X, and FIG. 3B is a diagram for explaining how excitation light enters the conventional phosphor device 1X.

As shown in FIG. 3A, a conventional phosphor device 1X includes a substrate member 10X and a wavelength conversion member 20X arranged on the substrate member 10X. The substrate member 10X is composed of a translucent base material 11X, a dielectric multilayer film 12X, and an antireflection film 13X. Further, the wavelength conversion member 20X is composed of a fluorescent portion 21X and a light reflecting portion 22X. A light scattering portion 22a for scattering and reflecting light is present inside the light reflecting portion 22X.

The light reflecting portion 22X of the wavelength converting member 20X and the substrate member 10X are connected by a connecting member 30X, but the fluorescent portion 21X of the wavelength converting member 20X and the substrate member 10X are not connected. That is, the fluorescent portion 21X of the wavelength conversion member 20X and the dielectric multilayer film 12X of the substrate member 10X are not in contact with each other, and the thickness of the connecting member 30X is provided between the fluorescent portion 21X and the substrate member 10X. There is a space 40X of .

In the conventional phosphor device 1X configured in this manner, as shown in FIG. 3B, as in the phosphor device 1 in the first embodiment, excitation light is incident on the fluorescent portion 21X of the wavelength conversion member 20X. emits white light.

When the fluorescent portion 21X is irradiated with the excitation light, the fluorescent portion 21X generates heat. At this time, the lower portion of the fluorescent portion 21X on the incident side of the excitation light becomes hotter than the upper portion.

However, in the conventional phosphor device 1X, a space 40X is provided between the high-temperature portion (lower portion) of the phosphor portion 21X and the substrate member 10X, so that the heat generated in the phosphor portion 21X is transferred to the substrate. It becomes difficult to conduct to the member 10X. That is, the heat radiation property of the heat generated in the fluorescent portion 21X is deteriorated. Therefore, in the conventional phosphor device 1X, the luminous efficiency of the phosphor portion 21X is lowered, and the efficiency and luminance of the phosphor device 1X are lowered.

Therefore, it is conceivable to eliminate the space 40X between the fluorescent portion 21X and the substrate member 10X and directly join the fluorescent portion 21X and the substrate member 10X to improve the heat dissipation property of the heat generated in the fluorescent portion 21X. Since the conventional phosphor device 1X has a layered structure of rigid members, when the phosphor section 21X and the substrate member 10X are directly bonded, the linear expansion coefficient (linear expansion coefficient) of the phosphor section 21X and the substrate member 10X ) and the thickness of these members, peeling may occur at the interface between the fluorescent portion 21X and the substrate member 10X when the temperature of the phosphor device 1X irradiated with excitation light rises.

Moreover, in a phosphor device having a laminated structure of rigid members, peeling may occur at the interface between members other than the interface between the fluorescent portion and the translucent member. In other words, there is a risk that delamination will occur at any interface between two adjacent members. For example, in the conventional phosphor device 1X, peeling may occur at the interface between the fluorescent portion 21X and the light reflecting portion 22X, or at the interface between the light reflecting portion 22X and the substrate member 10X. be.

As a result of intensive studies by the inventors of the present application, the inventors of the present application have found that, in a phosphor device in which a wavelength conversion member having a fluorescent portion is provided on a substrate member, the wavelength conversion member serves not only as the fluorescent portion but also as the light reflecting portion. In addition to limiting the material of the main component of the fluorescent part and increasing the thickness of the fluorescent part, further, by bonding the fluorescent part and the substrate member with a flexible transparent adhesive layer Furthermore, they have found that it is possible to improve the heat dissipation property of the heat generated in the fluorescent portion and to suppress the occurrence of peeling at the interface between two adjacent members such as the interface between the fluorescent portion and the substrate member.

Specifically, in the phosphor device 1 according to the present embodiment, first, the wavelength conversion member 20 has not only the fluorescent portion 21 but also the light reflecting portion 22, and the main component of the fluorescent portion 21 is the fluorescent portion. The body ceramics is used, and the thickness of the fluorescent portion 21 is set to 200 μm or more.

In this way, by using phosphor ceramics as the main component of the phosphor part 21, the heat dissipation property of the heat generated in the phosphor part 21 is greatly improved compared to the case where the main component of the phosphor part 21 is phosphor resin. can be made Moreover, since the wavelength conversion member 20 has not only the fluorescent portion 21 but also the light reflecting portion 22 , the thickness of the fluorescent portion 21 is set to 200 μm or more, so that the heat generated in the fluorescent portion 21 can be to the light reflecting portion 22 efficiently. As a result, in addition to the effect of improving heat dissipation by using fluorescent ceramics as the main component of the fluorescent portion 21, the heat dissipation property of the heat generated in the fluorescent portion 21 can be further improved.

Furthermore, since the wavelength conversion member 20 has the light reflecting portion 22 in addition to the fluorescent portion 21 , the light emitted from the fluorescent portion 21 can be reflected by the light reflecting portion 22 . Thereby, the amount of light that can be extracted from the fluorescent portion 21 can be increased. Therefore, the brightness of the fluorescent portion 21 can be improved.

Moreover, by setting the thickness of the fluorescent portion 21 to 200 μm or more, the chromaticity of the fluorescent portion 21 can be stabilized. An experiment was conducted on this point, and the details and results of the experiment will be described with reference to FIG. FIG. 4 is a diagram showing the relationship between the thickness of the fluorescent portion 21 and the chromaticity in the phosphor device 1 according to the first embodiment.

In this experiment, a substrate member 10 (a blue-transmitting/green/red-reflecting dichroic coating film is formed on the front surface and a visible light A blue laser beam is incident from the back side of the sapphire substrate on which a band AR coating film is formed), and a spectroscope (MCPD-700) detects the color at the detection angle θ = 0 ° and θ = 45 °. degree was measured.

The xy chromaticity diagram of FIG. 4 is obtained when the thickness of the fluorescent portion 21 is changed to 125 μm (Ce concentration 0.08%), 300 μm (Ce concentration 0.03%), and 400 μm (Ce concentration 0.01%). 2 shows the results of measuring the chromaticity of each fluorescent portion 21 of . That is, the xy chromaticity diagram of FIG. 4 shows a total of 6 chromaticity diagrams for the detection angles θ=0° and θ=45° for each of t=125 μm, t=300 μm, and t=400 μm. Two chromaticity points (x, y) are plotted. The xy coordinates of these six chromaticity points are shown in the lower column of FIG.

As shown in FIG. 4, when t=125 μm, the chromaticity points differ greatly between the detection angle θ=0° and the detection angle θ=45°, and the chromaticity shift may increase. Do you get it. On the other hand, when t = 300 µm, the difference in chromaticity points between the detection angles θ = 0° and θ = 45° was significantly smaller than when t = 125 µm, and the chromaticity was stable. It was found to turn into Furthermore, it was found that when t=400 μm, the difference in chromaticity points due to the difference in detection angle almost disappeared. From this result, it is considered that the thickness of the fluorescent portion 21 should be at least 125 μm or more, and that a thickness of 200 μm or more eliminates the difference in chromaticity points. Moreover, from the viewpoint of stabilizing the chromaticity of the fluorescent portion 21, the thickness of the fluorescent portion 21 is preferably 250 μm or more, more preferably 300 μm or more, and even more preferably 400 μm or more.

In addition, in the phosphor device 1 according to the present embodiment, the phosphor section 21 and the substrate member 10 are adhered via the flexible transparent adhesive layer 30 . As a result, heat generated in the fluorescent portion 21 can be efficiently conducted to the substrate member 10 compared to the case where the space 40X is provided between the fluorescent portion 21X and the substrate member 10X as in the conventional phosphor device 1X. can be done. Therefore, it is possible to improve the heat radiation property of the heat generated in the fluorescent portion 21 .

Furthermore, in the phosphor device 1 according to the present embodiment, the value of the smaller linear expansion coefficient between the fluorescent portion 21 and the substrate member 10 is 97 times the value of the larger linear expansion coefficient. % or less, and there is a linear expansion coefficient difference between the fluorescent portion 21 and the substrate member 10 . Therefore, the fluorescent portion 21 or the substrate member 10 is deformed due to the difference in the linear expansion coefficient between the fluorescent portion 21 and the substrate member 10, and the interface between the fluorescent portion 21 and the substrate member 10 is deformed by the stress of the deformation. delamination may occur. For example, if the substrate member 10 is deformed, the fluorescent part 21 and the substrate member 10 may be separated from each other due to the stress caused by the deformation of the substrate member 10 .

However, in the phosphor device 1 according to the present embodiment, the fluorescent portion 21 and the substrate member 10 are adhered via the transparent adhesive layer 30 having flexibility. Even if the substrate member 10 or the like is deformed due to the difference in coefficient of linear expansion between them, the stress due to the deformation can be absorbed by the transparent adhesive layer 30 . In other words, the flexible transparent adhesive layer 30 functions as a cushioning material that absorbs stress. As a result, the wavelength conversion member 20 is less likely to be affected by deformation of the substrate member 10 or the like. It is possible to suppress the occurrence of peeling between. Specifically, it is possible to suppress the occurrence of peeling between the fluorescent portion 21 and the substrate member 10 and to suppress the occurrence of peeling between the light reflecting portion 22 and the substrate member 10 .

Moreover, since the wavelength conversion member 20 is less likely to be affected by deformation of the substrate member 10 or the like, it is possible not only to suppress the separation between the wavelength conversion member 20 and the substrate member 10, but also to suppress fluorescence in the wavelength conversion member 20. The occurrence of peeling at the interface between the portion 21 and the light reflecting portion 22 can also be suppressed. That is, the adhesion between the fluorescent portion 21 and the light reflecting portion 22 is improved.

Regarding this point, when the inventors of the present application conducted an experiment, they produced a plurality of phosphor devices by bonding the wavelength conversion member 20 and the substrate member 10 without using the transparent adhesive layer 30 having flexibility. However, in some phosphor devices among them, peeling occurred at the interface between the phosphor part 21 and the light reflecting part 22 in the wavelength conversion member 20 during the production of the phosphor device and during the use of the phosphor device. As in this embodiment, when the wavelength conversion member 20 and the substrate member 10 are adhered to each other by the flexible transparent adhesive layer 30 to produce the phosphor device 1, the fluorescent portion 21 and the light reflecting portion 22 There was no case where peeling occurred at the interface with.

As described above, in the phosphor device 1 of the present embodiment, by using the transparent adhesive layer 30 having flexibility, it is possible to suppress the occurrence of peeling at the interfaces between the members of the phosphor device 1 . In particular, in the phosphor device 1 according to the present embodiment, as described above, the thickness of the phosphor portion 21 is increased to 200 μm or more from the viewpoint of improving the heat dissipation property. However, since the flexible transparent adhesive layer 30 functions as a cushioning material, even if the thickness of the fluorescent portion 21 is increased to 200 μm or more, the It is possible to effectively suppress the occurrence of peeling. That is, in phosphor device 1 of the present embodiment, it is possible to achieve both improvement in heat dissipation and suppression of peeling.

As described above, the phosphor device 1 according to the present embodiment includes the substrate member 10 and the wavelength conversion member 20 having at least the fluorescent portion 21 and the light reflecting portion 22. The main component of the fluorescent portion 21 is is a phosphor ceramic, the thickness of the phosphor portion 21 is 200 μm or more, and the value of the smaller linear expansion coefficient between the phosphor portion 21 and the substrate member 10 is equal to the larger linear expansion coefficient is 97% or less of the value of , and the fluorescent portion 21 and the substrate member 10 are bonded via the transparent adhesive layer 30 having flexibility in the state after bonding.

With this configuration, it is possible to improve the heat dissipation property of the heat generated in the fluorescent portion 21 and to suppress the occurrence of peeling at the interface between two adjacent members. Thereby, the phosphor device 1 and the light emitting device 100 with high efficiency and high brightness can be realized.

Moreover, the Young's modulus of the transparent adhesive layer 30 that bonds the wavelength conversion member 20 and the substrate member 10 is preferably less than 1 GPa.

As a result, the Young's modulus of the transparent adhesive layer 30 is reduced, so that the transparent adhesive layer 30 can absorb stress caused by deformation of the substrate member 10 and the like. Therefore, it is possible to further suppress the occurrence of delamination at the interface between the two adjacent members.

Moreover, the transparent adhesive layer 30 that bonds the wavelength conversion member 20 and the substrate member 10 is preferably made mainly of silicon resin.

As a result, the Young's modulus of the transparent adhesive layer 30 is reduced, so that the stress due to the deformation of the substrate member 10 and the like can be absorbed by the transparent adhesive layer 30 more effectively. Since the stress absorbing function of 30 can be effectively exhibited, the thickness of the transparent adhesive layer 30 can be reduced. Thereby, the heat radiation property of the heat generated in the fluorescent part 21 can be improved. In this way, by using the silicone resin as the main component of the transparent adhesive layer 30, it is possible to achieve both an improvement in the heat dissipation property of the heat generated in the fluorescent portion 21 and the exertion of the stress absorbing function by the transparent adhesive layer 30. .

Also, if the thickness of the transparent adhesive layer 30 is too thick, the heat generated in the fluorescent portion 21 is less likely to be conducted to the substrate member 10 . On the other hand, if the transparent adhesive layer 30 is too thin, the stress absorbing function of the transparent adhesive layer 30 is reduced.

Therefore, the thickness of the transparent adhesive layer 30 that bonds the wavelength conversion member 20 and the substrate member 10 is preferably 0.5 μm or more and 50 μm or less.

As a result, it is possible to achieve both improvement in the heat dissipation performance of the heat generated in the fluorescent portion 21 and the performance of the stress absorption function by the transparent adhesive layer 30 .

Further, in the light emitting device 100 according to the present embodiment, the external size of the fluorescent portion 21 is equivalent to the spot size (spot size of the excitation light) when the light emitted from the light source 2 is incident on the fluorescent portion 21. there is

With this configuration, the phosphor device 1 and the light emitting device 100 with higher efficiency and higher brightness can be realized.

Moreover, in the phosphor device 1 according to the present embodiment, the light reflecting portion 22 is in thermal contact with the phosphor portion 21 .

With this configuration, the heat generated in the fluorescent portion 21 is effectively conducted from the side surface of the fluorescent portion 21 to the light reflecting portion 22 . Therefore, the heat radiation property of the heat generated in the fluorescent portion 21 is improved. As a result, the luminous efficiency of the fluorescent portion 21 can be improved, so that the phosphor device 1 and the light emitting device 100 with higher efficiency and higher brightness can be realized.

Further, in the phosphor device 1 according to the present embodiment, the light reflecting portion 22 is made of alumina.

Since alumina has a high thermal conductivity, the heat generated in the fluorescent portion 21 can be more easily conducted from the side surface of the fluorescent portion 21 to the light reflecting portion 22 by forming the light reflecting portion 22 from alumina. As a result, the heat radiation property of the heat generated in the fluorescent portion 21 is further improved.

Further, in the phosphor device 1 according to the present embodiment, the light reflecting portion 22 is preferably composed of a binder made of a resin material and light reflecting particles made of an inorganic material.

With this configuration, the light reflecting portion 22 having a high light reflectance can be provided around the fluorescent portion 21, so that the amount of light that can be extracted from the fluorescent portion 21 can be increased. Therefore, the phosphor device 1 and the light emitting device 100 with higher efficiency and higher brightness can be realized.

Moreover, by using a resin material as the main component of the light reflecting portion 22, even if the light reflecting portion 22 is deformed due to the difference in coefficient of linear expansion between members, the followability of the deformation of the light reflecting portion 22 can be improved. can be done. Also, the adhesion between the fluorescent portion 21 and the light reflecting portion 22 can be improved.

In addition, when the light reflecting portion 22 is made of a binder made of a resin material, it is preferable that the upper surface of the fluorescent portion 21 is not covered with the binder.

If the binder of the light reflecting portion 22 is applied to the upper surface of the fluorescent portion 21, it prevents the outer size of the fluorescent portion 21 from being equal to the spot size of the excitation light, and the brightness of the fluorescent portion 21 may decrease. Therefore, by preventing the binder of the light reflecting portion 22 from covering the upper surface of the fluorescent portion 21, the binder of the light reflecting portion 22 does not interfere with making the external size of the fluorescent portion 21 equal to the spot size of the excitation light. Therefore, it is possible to suppress the luminance of the fluorescent portion 21 from decreasing.

Further, in the phosphor device 1 according to the present embodiment, the substrate member 10 has the translucent base material 11 and the dielectric multilayer film 12 provided on the first surface 11a of the translucent base material 11. ing.

With this configuration, the dielectric multilayer film 12 can reflect the light directed toward the substrate member 10 out of the light emitted by the fluorescent portion 21 . This makes it possible to increase the light of the fluorescent portion 21 that can be extracted from the phosphor device 1 . Therefore, the phosphor device 1 and the light emitting device 100 with higher efficiency and higher brightness can be realized.

Further, in the phosphor device 1 according to the present embodiment, the substrate member 10 further has an antireflection film 13 provided on the second surface 11 b of the translucent base material 11 .

With this configuration, the efficiency of capturing excitation light incident on the phosphor device 1 can be improved. Therefore, the phosphor device 1 and the light emitting device 100 with higher efficiency and higher brightness can be realized.

Further, in phosphor device 1 according to the present embodiment, the main component of the material forming translucent base material 11 of substrate member 10 is preferably Al ₂ O ₃ , AlN, or GaN.

By doing so, the thermal conductivity of the substrate member 10 can be increased. As a result, the heat generated by the fluorescent portion 21 can be more efficiently conducted to the substrate member 10, so that the heat dissipation property of the heat generated by the fluorescent portion 21 can be further improved. Therefore, the phosphor device 1 and the light emitting device 100 with higher efficiency and higher brightness can be realized.

Moreover, like the phosphor device 1A shown in FIG. FIG. 5 is a cross-sectional view of a phosphor device 1A according to a modification of the first embodiment.

The metal plate 40 is provided on the surface of the substrate member 10 opposite to the surface on the wavelength converting member 20 side with the bonding layer 50 interposed therebetween. Specifically, the metal plate 40 is bonded to the antireflection film 13 of the substrate member 10 via the bonding layer 50 . A copper plate or an aluminum plate can be used as the metal plate 40 .

With this configuration, the heat dissipation property of the heat generated in the phosphor section 21 can be improved more than the phosphor device 1 described above. Therefore, it is possible to realize a phosphor device 1A and a light emitting device with higher efficiency and higher brightness.

As the bonding layer 50, a resin adhesive containing a resin material as a main component can be used. The resin material forming the bonding layer 50 is, for example, silicon resin, epoxy resin, urethane resin, or the like. By forming the bonding layer 50 from a resin material in this manner, the Young's modulus of the bonding layer 50 can be reduced. Thereby, the bonding layer 50 can absorb the stress due to the deformation of the substrate member 10 and the like caused by the difference in linear expansion coefficient between the substrate member 10 and the metal plate 40 . Therefore, it is possible to suppress the occurrence of delamination between the substrate member 10 and the metal plate 40 .

In addition, when the bonding layer 50 is made of a resin material, it is preferable that a highly thermally conductive filler made of an inorganic material is dispersed in the resin material. This increases the thermal conductivity of the bonding layer 50 , so that the heat generated in the fluorescent portion 21 can be efficiently radiated through the substrate member 10 and the metal plate 40 . Note that the high thermal conductive filler (inorganic filler) is not melted or sintered. For example, as a resin adhesive containing an inorganic filler, a silver paste adhesive containing a non-melting silver filler can be used.

Note that the bonding layer 50 is not limited to a resin adhesive containing a resin material as a main component, and may be a metal adhesive in which a metal as a main component is melted, solidified, eutectic, or sintered. In this case, as the joining layer 50, a sintered silver paste adhesive or a metal adhesive such as solder can be used.

In phosphor device 1A, metal plate 40 has opening 41 through which light incident on phosphor device 1A passes. For example, the metal plate 40 has a rectangular opening 41 . Specifically, the planar view shape of the metal plate 40 is a rectangular frame shape having a rectangular opening 41 and a rectangular outer shape. In addition, in the present embodiment, the opening 41 of the metal plate 40 has the same size and shape as the opening of the light reflecting portion 22, but is not limited to this.

Here, a simulation was performed to confirm the stress relaxation effect of the transparent adhesive layer 30 and the bonding layer 50 using a structural analysis model for the phosphor device 1A having the configuration shown in FIG. Description will be made with reference to FIGS. 6A and 6B.

FIG. 6A shows the specifications of the structural analysis model of the phosphor device 1A when simulating the stress relaxation effect of the transparent adhesive layer and the bonding layer. In the item of "bonding" in FIG. 6A, "adhesion" assumes bonding with a resin adhesive (transparent adhesive layer 30), and "metal bonding" assumes bonding with a metal adhesive.

FIG. 6B is a diagram showing calculation results of the stress of the phosphor device 1A having the configuration shown in FIG. 5 in the specifications of FIG. 6A. In FIG. 6B, four samples (comparison Fig. 2 shows stress calculation results for Example 1, Comparative Example 2, Example 1, and Example 2).

A phosphor device 1A of Comparative Example 1 has a configuration in which the phosphor portion 21 and the substrate member 10 are directly bonded, and the substrate member 10 and the metal plate 40 are bonded with a metal adhesive. That is, the bonding layer 50 that bonds the substrate member 10 and the metal plate 40 is a metal adhesive.

A phosphor device 1A of Comparative Example 2 has a configuration in which the phosphor portion 21 and the substrate member 10 are directly bonded, and the substrate member 10 and the metal plate 40 are bonded with a resin adhesive. That is, the bonding layer 50 that bonds the substrate member 10 and the metal plate 40 is a resin adhesive.

The phosphor device 1A of Example 1 has a configuration in which the fluorescent portion 21 and the substrate member 10 are bonded with a resin adhesive, and the substrate member 10 and the metal plate 40 are bonded with a metal adhesive. That is, the transparent adhesive layer 30 that bonds the fluorescent portion 21 and the substrate member 10 is a resin adhesive, and the bonding layer 50 that bonds the substrate member 10 and the metal plate 40 is a metal adhesive.

In the phosphor device 1A of Example 2, the fluorescent portion 21 and the substrate member 10 are bonded with a resin adhesive, and the substrate member 10 and the metal plate 40 are also bonded with a resin adhesive. That is, both the transparent adhesive layer 30 that bonds the fluorescent portion 21 and the substrate member 10 together and the bonding layer 50 that bonds the substrate member 10 and the metal plate 40 are resin adhesives.

In this simulation, a load due to a temperature change was applied to the four phosphor devices 1A of Comparative Example 1, Comparative Example 2, Example 1, and Example 2, and the fluorescent portion 21, the substrate member 10, and the bonding layer at this time 50 (the joint portion between the substrate member 10 and the metal plate 40) was calculated. In this simulation, the phosphor device 1A was uniformly cooled from 200.degree. C. to -20.degree. By applying a load due to temperature, stress such as compressive stress or tensile stress is generated in each member due to the difference in coefficient of linear expansion between the members.

As shown in FIG. 6B , when comparing Comparative Example 1 and Example 1, the fluorescent portion 21 and the substrate member 10 are not directly bonded, but are bonded with a resin adhesive (transparent adhesive layer 30). It can be seen that the stress on the portion 21 and the substrate member 10 can be greatly reduced. Similarly, comparing Comparative Example 2 and Example 2, the stress of the fluorescent portion 21 and the substrate member 10 can be reduced by bonding the fluorescent portion 21 and the substrate member 10 with a resin adhesive (transparent adhesive layer 30). It can be seen that it can be significantly reduced.

Further, when comparing Example 1 and Example 2, not only the fluorescent portion 21 and the substrate member 10 are bonded with the resin adhesive (transparent adhesive layer 30), but also the substrate member 10 and the metal plate 40 are resin-bonded. It can be seen that the stress of the fluorescent portion 21 and the substrate member 10 can be further reduced by bonding with an agent. Moreover, it can be seen that not only the stress on the fluorescent portion 21 and the substrate member 10 can be reduced, but also the stress on the bonding layer 50 that is the bonding portion between the substrate member 10 and the metal plate 40 can be reduced.

However, since a resin adhesive has a lower thermal conductivity than a metal adhesive, when the bonding layer 50 is a resin adhesive, heat generated in the fluorescent portion 21 is more likely than when the bonding layer 50 is a metal adhesive. The heat dissipation effect of the generated heat is reduced.

Therefore, as described above, the bonding layer 50 may contain a high thermal conductive filler to increase the thermal conductivity of the bonding layer 50 .

Regarding this point, a simulation was performed to confirm the heat dissipation effect of the bonding layer 50 on the fluorescent portion 21 by using a thermal analysis model for the phosphor device 1A having the configuration shown in FIG. Description will be made with reference to 7A and 7B.

FIG. 7A shows specifications of a thermal analysis model of the phosphor device 1A when simulating the heat dissipation effect of the phosphor part by the bonding layer. FIG. 7B shows the phosphor device 1A of FIG. 5 with the specifications of FIG. 7A, and the fluorescent parts of three samples (Examples 3, 4, and 5) when the thermal conductivity of the bonding layer 50 is changed. 21 shows the calculated results of the temperature rise of No. 21.

In Examples 3 and 4, the bonding layer 50 that bonds the substrate member 10 and the metal plate 40 is a resin adhesive, as in the above-described Example 2. FIG. However, the bonding layer 50 of Example 3 does not have a high thermal conductivity filler and has a thermal conductivity of 0.2 W/mK. On the other hand, the bonding layer 50 of Example 4 contains a high thermal conductivity filler and has a thermal conductivity of 5 W/mK.

In Example 5, as in Example 1, the bonding layer 50 that bonds the substrate member 10 and the metal plate 40 is a metal adhesive. Therefore, the thermal conductivity of the bonding layer 50 of Example 5 is as high as 100 W/mK.

In this simulation, the fluorescent portion 21 is caused to generate heat, and the temperature rise of the fluorescent portion 21 at this time is calculated. In this simulation, the fluorescent part 21 of the phosphor device 1A was made to generate heat by applying heat of 3.75 W to the central 1 mm square area of the fluorescent part 21 .

As a result, as shown in FIG. 7B, when the bonding layer 50 is made of a resin adhesive, the thermal conductivity of the bonding layer 50 must be several watts in order to obtain the same heat dissipation effect as when the bonding layer 50 is made of a metal adhesive. /mK or more. Specifically, even if the bonding layer 50 is a resin adhesive, a heat dissipation effect equivalent to that of a metal adhesive can be obtained as long as the bonding layer 50 has a thermal conductivity of 5 W/mK or more.

Next, the relationship between the Young's modulus and the thickness of the transparent adhesive layer 30 was analyzed by simulation for the phosphor device 1A having the configuration shown in FIG. , with reference to FIGS. 9A to 9C.

FIG. 8 shows specifications of a structural analysis model of the phosphor device 1A when analyzing the relationship between Young's modulus and thickness in the transparent adhesive layer 30 by simulation. As shown in FIG. 8, in this simulation, the size (thickness) and Young's modulus of the transparent adhesive layer 30 are variables (parameters) and can be changed.

In this simulation, a load due to a temperature change was added to the structural analysis model of the phosphor device 1A, and the stresses of the fluorescent portions 21, the substrate member 10, and the transparent adhesive layer 30 at this time were calculated. In this simulation, the phosphor device 1A was uniformly cooled from 200.degree. C. to -20.degree. By applying a load due to temperature, stress such as compressive stress or tensile stress is generated in each member due to the difference in coefficient of linear expansion between the members.

9A, 9B and 9C show the simulation results. FIG. 9A shows the relationship between the principal stress acting on the fluorescent portion 21 and the Young's modulus of the transparent adhesive layer 30 when structural analysis is performed according to the specifications of FIG. FIG. 9B shows the relationship between the principal stress acting on the substrate member 10 and the Young's modulus of the transparent adhesive layer 30 when structural analysis is performed with the specifications of FIG. FIG. 9C shows the relationship between the equivalent stress acting on the transparent adhesive layer 30 and the Young's modulus of the transparent adhesive layer 30 when structural analysis is performed with the specifications of FIG. In FIGS. 9A to 9C, when the principal stress is positive, it indicates that tensile stress is acting, and when the principal stress is negative, it indicates that compressive stress is acting. YAG and alumina, which are brittle materials, were evaluated by principal stress, and silicon resin, which is ductile material, was evaluated by equivalent stress.

Further, in this simulation, as shown in FIGS. 9A to 9C, when the thickness of the transparent adhesive layer 30 is 0.5 μm, 10 μm, 50 μm, and 100 μm, the fluorescent portion 21, the substrate member 10, and the transparent adhesive layer 30 The relationship between the principal stress or equivalent stress acting on each and the Young's modulus of the transparent adhesive layer 30 was analyzed.

As a result, the breaking stress of the fluorescent portion 21 made of YAG phosphor and the light reflecting portion 22 made of alumina was about 300 MPa in bending stress and about 2000 MPa in compressive stress. When the thickness of 30 is in the range of 0.5 μm to 100 μm, the breaking stress of fluorescent portion 21 is not reached. From the results shown in FIG. 9A, the Young's modulus of the transparent adhesive layer 30 is preferably less than 1000 MPa (=1 GPa), more preferably less than 100 MPa (=0.1 GPa). The principal stress plotted in the graph of FIG. 9A is the value of the largest principal stress in the YAG portion and the alumina portion forming the wavelength conversion member 20 . Specifically, the principal stress of alumina in the peripheral portion is larger than that of YAG in the central portion. Therefore, the portion where the values plotted in the graph of FIG. 9A were calculated is the corner portion of alumina (the corner portion of 7.5 mm square), not the front side but the back side (interface side with the transparent adhesive layer 30). is.

The breaking stress of the substrate member 10 made of sapphire is about 500 MPa in bending stress and about 3000 MPa in compressive stress. , the breaking stress of the substrate member 10 is not reached. From the results shown in FIG. 9B, the Young's modulus of the transparent adhesive layer 30 is preferably less than 1000 MPa (=1 GPa), more preferably less than 100 MPa (=0.1 GPa).

Moreover, since the breaking stress of the transparent adhesive layer 30 made of silicone resin is about 50 MPa, as shown in FIG. Young's modulus is preferably less than 100 MPa (=0.1 GPa).

9A to 9C, from the viewpoint of reducing stress, the Young's modulus of the transparent adhesive layer 30 is 100 MPa (= It is preferable that it is less than 0.1 GPa).

Next, the relationship between the thickness of the transparent adhesive layer 30 and the temperature was analyzed by simulation by thermal analysis with respect to the phosphor device 1A having the configuration shown in FIG. Description will be made with reference to FIGS. 11A and 11B.

FIG. 10 shows specifications of a thermal analysis model of the phosphor device 1A when analyzing the relationship between the thickness of the transparent adhesive layer 30 and the temperatures of the fluorescent portion 21 and the transparent adhesive layer 30 by simulation. As shown in FIG. 10, in this simulation, the size (thickness) of the transparent adhesive layer 30 is a variable (parameter) and can be changed.

In this simulation, the temperature of the fluorescent portion 21 and the temperature of the transparent adhesive layer 30 with respect to the thickness of the transparent adhesive layer 30 when the fluorescent portion 21 of the phosphor device 1A is heated were calculated. In this simulation, the fluorescent part 21 of the phosphor device 1A was heated by applying heat of 3.75 W (equivalent to 7 W excitation) to a central 0.8 mm square area of the fluorescent part 21 . At this time, the ambient temperature was constant at 30.degree. C., and the temperature of the lower surface of the metal plate 40 was constant at 30.degree.

11A and 11B show the simulation results. FIG. 11A shows the relationship between the thickness of the transparent adhesive layer 30 and the temperature of the fluorescent portion 21 and the transparent adhesive layer 30 when thermal analysis was performed with the specifications of FIG. FIG. 11B shows the relationship between the thermal resistance of the transparent adhesive layer 30 and the temperatures of the fluorescent portion 21 and the transparent adhesive layer 30 when thermal analysis was performed with the specifications of FIG.

The temperature of the fluorescent part 21 made of the YAG phosphor is preferably lower than the extinction temperature of the YAG phosphor (approximately 230° C. to 240° C.), and is made of silicone resin having a thermal conductivity of about 0.2 W/mK. The temperature of the transparent adhesive layer 30 is preferably lower than the heat-resistant temperature (approximately 200° C.) of silicone resin.

Therefore, from the viewpoint of the extinction temperature of the fluorescent portion 21 and the heat resistance temperature of the transparent adhesive layer 30, the thickness of the transparent adhesive layer 30 is preferably 20 μm or less, as shown in FIG. 11A. By setting the thickness of the transparent adhesive layer 30 to 20 μm or less, the heat generated in the fluorescent portion 21 can be effectively dissipated, and the temperature of the fluorescent portion 21 can be maintained below the quenching temperature. The temperature of layer 30 can be maintained below the heat resistant temperature.

As described above, the thickness of the transparent adhesive layer 30 is preferably 0.5 μm or more and 100 μm or less from the viewpoint of stress reduction alone. The thickness of the adhesive layer 30 is preferably 0.5 μm or more and 20 μm or less.

From the viewpoint of the extinction temperature of the fluorescent portion 21 and the heat resistance temperature of the transparent adhesive layer 30, the thermal resistance of the transparent adhesive layer 30 is preferably 35 KW or less, as shown in FIG. 11B. If the material forming the transparent adhesive layer 30 is not silicone resin, the thermal conductivity of the transparent adhesive layer 30 varies depending on the material. preferable.

(Embodiment 2)
Next, a phosphor device 1B according to Embodiment 2 will be described with reference to FIG. FIG. 12 is a diagram showing the configuration of a phosphor device 1B according to Embodiment 2. As shown in FIG. In FIG. 12, (a) is a top view of the same phosphor device 1B, and (b) is a cross-sectional view of the same phosphor device 1B along line XIIb-XIIb of (a).

A phosphor device 1B according to the present embodiment differs from the phosphor device 1 according to the first embodiment in the configuration of a wavelength converting member 20B. Specifically, as shown in FIG. 12, the wavelength conversion member 20B of the phosphor device 1B according to the present embodiment is similar to the wavelength conversion member 20 of the phosphor device 1 according to the first embodiment. The light reflecting portion 22B surrounding the side surface of the portion 21 and the fluorescent portion 21 is provided, and the light reflecting portion 22B in the present embodiment has a side-fill structure. Therefore, the light reflecting portion 22B is not formed on the entire upper surface of the substrate member 10, but is formed only on the peripheral portion of the fluorescent portion 21, and is formed like a wall so as to cover the side surface of the fluorescent portion 21. there is

Moreover, in the present embodiment, the transparent adhesive layer 30 is formed only between the fluorescent portion 21 and the substrate member 10 . That is, the transparent adhesive layer 30 is formed only below the fluorescent portion 21 . Therefore, the light reflecting portion 22B in the present embodiment covers not only the side surface of the fluorescent portion 21 but also the side surface of the transparent adhesive layer 30 .

The same material as that of the light reflecting portion 22 in the first embodiment can be used for the light reflecting portion 22B. Specifically, the light reflecting portion 22B can be a resin layer or a ceramic layer, but in order to form the light reflecting portion 22B having a side-fill structure, the light reflecting portion 22B is preferably a resin layer. As an example, the light reflecting portion 22B is a white resin layer in which titanium oxide particles are dispersed as the light scattering portion 22a in silicone resin.

As described above, in the phosphor device 1B according to the present embodiment, the wavelength conversion member 20B has not only the fluorescent portion 21 but also the light reflecting portion 22B, similarly to the phosphor device 1 according to the above-described embodiment. , The main component of the fluorescent portion 21 is phosphor ceramics, and the thickness of the fluorescent portion 21 is set to 200 μm or more. Further, in the phosphor device 1B according to the present embodiment, similarly to the phosphor device 1 according to the above-described embodiment, the value of the smaller linear expansion coefficient between the fluorescent portion 21 and the substrate member 10 is The coefficient of linear expansion is 97% or less of the larger coefficient of linear expansion, and the fluorescent portion 21 and the substrate member 10 are adhered via a flexible transparent adhesive layer 30 .

Thus, the phosphor device 1B according to the present embodiment has the same effect as the phosphor device 1 according to the above embodiment. In other words, it is possible to improve the heat dissipation property of the heat generated in the fluorescent portion 21 and to suppress the occurrence of peeling at the interface between the two adjacent members. Thereby, the phosphor device 1B and the light emitting device with high efficiency and high brightness can be realized.

Further, as in a phosphor device 1C shown in FIG. 13, a metal plate 40 may be provided in addition to the phosphor device 1B. FIG. 13 is a cross-sectional view of a phosphor device 1C according to a modification of the second embodiment.

The metal plate 40 is provided on the surface of the substrate member 10 opposite to the surface on the wavelength converting member 20 side with the bonding layer 50 interposed therebetween. Specifically, the metal plate 40 is bonded to the antireflection film 13 of the substrate member 10 via the bonding layer 50 . A copper plate or an aluminum plate can be used as the metal plate 40 . Moreover, the metal plate 40 has an opening 41 through which light incident on the phosphor device 1C passes. That is, the phosphor device 1C according to this modified example has the metal plate 40 and the bonding layer 50 having the same configurations as those of the phosphor device 1A shown in FIG.

With this configuration, the phosphor device 1C according to this modification has the same effect as the phosphor device 1A shown in FIG.

Here, an experiment was conducted to confirm the heat dissipation effect of the light reflecting portion 22B having the side-fill structure for the phosphor device 1C having the configuration shown in FIG. 14B will be used.

FIG. 14A shows five levels (level 1, level 2 , Level 3, Level 4, and Level 5), the temperature rise of the phosphor device 1C when the substrate member 10 is irradiated with the excitation light from the back side thereof is shown.

In this experiment, the phosphor part 21 was a phosphor ceramic layer (length 5 mm x width 5 mm x thickness 0.2 mm) consisting only of sintered YAG phosphor, and the translucent substrate 11 was a sapphire substrate (length 7 mm x thickness 0.2 mm). 7 mm wide×1 mm thick), and the metal plate 40 is a copper substrate (24 mm long×24 mm wide×3 mm) having an opening 41 of φ3 mm. The excitation light applied to the phosphor device 1C is blue laser light with an output of 15 W (2.7 A), and the laser spot diameter at the fluorescent portion 21 is φ3 mm. Also, the temperature rise was taken as the difference between the temperature of the fluorescent portion 21 and the temperature of the metal plate 40 . For each level, the temperature rise was measured in duplicate samples (n=2).

In FIG. 14A , “no” and “silicon” in the bonding state items between the fluorescent portion 21 and the substrate member 10 indicate the case where the transparent adhesive layer 30 bonding the fluorescent portion 21 and the substrate member 10 does not exist. and a case where a silicone resin adhesive exists as the transparent adhesive layer 30. FIG. "No" and "Yes" in the item of side-fill indicate the case where the side-fill structure does not exist as the light reflecting portion 22 and the case where the side-fill structure exists, respectively. When the side-fill structure does not exist, the side surfaces of the fluorescent section 21 and the transparent adhesive layer 30 are not covered with the light reflecting section 22 and are exposed. "None," "silver paste layer," and "sintered silver layer," which indicate the state of bonding between the substrate member 10 and the metal plate 40, respectively, are bonding states for bonding the substrate member 10 and the metal plate 40 A case where the layer 50 does not exist, a case where a silver paste layer exists as the bonding layer 50, and a case where a silver sintered layer exists as the bonding layer 50 are shown. The thickness of the silver paste layer and the silver sintered layer was 0.05 mm.

FIG. 14B graphs the temperature rise of the five levels (two of each) in FIG. 14A.

As shown in FIG. 14B, comparing Level 1 and Level 2, the heat generated in the fluorescent portion 21 is reduced by bonding the fluorescent portion 21 and the substrate member 10 with the transparent adhesive layer 30 made of silicone resin adhesive. It can be seen that the heat dissipation is improved.

Further, comparing Level 2 and Level 3, it can be seen that by covering the side surface of the fluorescent portion 21 with the light reflecting portion 22 having the side-fill structure, the heat dissipation property of the heat generated in the fluorescent portion 21 is further improved.

Comparing Level 3 with Levels 4 and 5, by covering the side surface of the fluorescent portion 21 with the light reflecting portion 22 having a side-fill structure, the substrate member 10 and the metal plate 40 are formed into a silver paste layer or a silver sintered layer. It can be seen that a heat dissipation effect equivalent to that in the case of bonding with a bonding layer 50 having a high thermal conductivity consisting of is obtained.

(Modification)
Although the phosphor device and the light emitting device according to the present invention have been described above based on the embodiments, the present invention is not limited to the above embodiments.

For example, in Embodiments 1 and 2 described above, the wavelength conversion member 20 has the light reflecting portion 22 in addition to the fluorescent portion 21, but the present invention is not limited to this. Further, in Embodiments 1 and 2 described above, the substrate member 10 has the dielectric multilayer film 12 and the antireflection film 13 in addition to the translucent base material 11, but the present invention is not limited to this. Specifically, the wavelength conversion member 20 may be composed of only the fluorescent portion 21 without the light reflecting portion 22 , and the substrate member 10 may include the dielectric multilayer film 12 and the antireflection film 13 . , and may be composed only of the translucent base material 11 .

Moreover, in the first and second embodiments, the light emitting device is a transmissive light emitting device in which the excitation light incident on the phosphor device is transmitted through the phosphor device, but the present invention is not limited to this. For example, the light-emitting device may be a reflective light-emitting device in which excitation light incident on the phosphor device is reflected by the phosphor device without passing through the phosphor device. That is, the light emitting device may be configured such that the light emitted from the light source 2 is reflected by the wavelength conversion member. In this case, the substrate member on which the wavelength conversion member is formed serves as a reflective substrate, and the excitation light is irradiated from above the wavelength conversion member.

Moreover, in the first and second embodiments, the light-emitting device is a stationary light-emitting device in which the phosphor device does not move, but the present invention is not limited to this. Specifically, the light-emitting device may be a rotating light-emitting device in which the phosphor device rotates. In this case, the phosphor device can be used, for example, as a rotating phosphor hole.

In addition, a form obtained by applying various modifications that a person skilled in the art can think of to the above embodiment, and a form realized by arbitrarily combining the constituent elements and functions in the embodiment without departing from the spirit of the present invention. is also included in the present invention.

Reference Signs List 1, 1A, 1B, 1C phosphor device 2 light source 10 substrate member 11 translucent substrate 11a first surface 11b second surface 12 dielectric multilayer film 13 antireflection film 20, 20B wavelength conversion member 21 fluorescent section 22, 22B Light Reflector 30 Transparent Adhesive Layer 40 Metal Plate 41 Opening 50 Joining Layer 100 Light Emitting Device

Claims (17)

a substrate member;
a wavelength conversion member having at least a fluorescent portion and a light reflecting portion,
The main component of the fluorescent portion is phosphor ceramics,
The thickness of the fluorescent portion is 200 μm or more,
In the fluorescent portion and the substrate member, the linear expansion coefficient value of the smaller linear expansion coefficient is 97% or less of the linear expansion coefficient value of the larger linear expansion coefficient,
The fluorescent part and the substrate member are bonded via a transparent adhesive layer having flexibility in a state after bonding,
phosphor device. The light reflecting portion is in thermal contact with the fluorescent portion,
The phosphor device of Claim 1. The light reflecting portion is made of alumina,
The phosphor device of Claim 1. The light reflecting portion is composed of a binder made of a resin material and light reflecting particles made of an inorganic material,
The phosphor device of Claim 1. The binder does not cover the upper surface of the fluorescent portion,
5. The phosphor device of claim 4. Young's modulus of the transparent adhesive layer is less than 0.1 GPa,
The phosphor device according to any one of claims 1-5. The thickness of the transparent adhesive layer is 0.5 μm or more and 20 μm or less.
7. The phosphor device of claim 6. The transparent adhesive layer is mainly composed of silicone resin,
A phosphor device according to claim 7 . The thickness of the transparent adhesive layer is 0.5 μm or more and 20 μm or less.
The phosphor device according to any one of claims 1-5. The transparent adhesive layer is mainly composed of silicone resin,
The phosphor device according to any one of claims 1-5. The substrate member has a light-transmitting base material and a dielectric multilayer film provided on a first surface of the light-transmitting base material on the wavelength conversion member side,
The phosphor device according to any one of claims 1-5. The main component of the material that constitutes the translucent base material is Al ₂ O ₃ , AlN, or GaN.
12. The phosphor device of claim 11. The substrate member further has an antireflection film provided on a second surface facing the first surface of the translucent base material,
12. The phosphor device of claim 11. further comprising a metal plate provided via a bonding layer on the surface of the substrate member opposite to the surface on the wavelength conversion member side,
the metal plate has an opening through which light incident on the phosphor device passes;
The phosphor device according to any one of claims 1-5. The bonding layer is made of a resin material,
15. The phosphor device of Claim 14. The bonding layer has a high thermal conductivity filler,
15. The phosphor device of Claim 14. a phosphor device according to any one of claims 1 to 5;
a light source that emits light incident on the phosphor device,
The outer size of the fluorescent part in the phosphor device is equivalent to the spot size when the light emitted from the light source is incident on the fluorescent part,
Luminescent device.

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