JP2022048249A - 有機電子素子の封止方法 - Google Patents
有機電子素子の封止方法 Download PDFInfo
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- JP2022048249A JP2022048249A JP2022010977A JP2022010977A JP2022048249A JP 2022048249 A JP2022048249 A JP 2022048249A JP 2022010977 A JP2022010977 A JP 2022010977A JP 2022010977 A JP2022010977 A JP 2022010977A JP 2022048249 A JP2022048249 A JP 2022048249A
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- 150000003863 ammonium salts Chemical class 0.000 description 1
- 125000000129 anionic group Chemical group 0.000 description 1
- 150000004056 anthraquinones Chemical class 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 1
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 1
- 230000001588 bifunctional effect Effects 0.000 description 1
- VYHBFRJRBHMIQZ-UHFFFAOYSA-N bis[4-(diethylamino)phenyl]methanone Chemical compound C1=CC(N(CC)CC)=CC=C1C(=O)C1=CC=C(N(CC)CC)C=C1 VYHBFRJRBHMIQZ-UHFFFAOYSA-N 0.000 description 1
- DQXBYHZEEUGOBF-UHFFFAOYSA-N but-3-enoic acid;ethene Chemical compound C=C.OC(=O)CC=C DQXBYHZEEUGOBF-UHFFFAOYSA-N 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 150000007942 carboxylates Chemical group 0.000 description 1
- 125000002091 cationic group Chemical group 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000004927 clay Substances 0.000 description 1
- 229910052570 clay Inorganic materials 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- VBVAVBCYMYWNOU-UHFFFAOYSA-N coumarin 6 Chemical compound C1=CC=C2SC(C3=CC4=CC=C(C=C4OC3=O)N(CC)CC)=NC2=C1 VBVAVBCYMYWNOU-UHFFFAOYSA-N 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- GUJOJGAPFQRJSV-UHFFFAOYSA-N dialuminum;dioxosilane;oxygen(2-);hydrate Chemical compound O.[O-2].[O-2].[O-2].[Al+3].[Al+3].O=[Si]=O.O=[Si]=O.O=[Si]=O.O=[Si]=O GUJOJGAPFQRJSV-UHFFFAOYSA-N 0.000 description 1
- 239000012954 diazonium Substances 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-O diazynium Chemical compound [NH+]#N IJGRMHOSHXDMSA-UHFFFAOYSA-O 0.000 description 1
- GYZLOYUZLJXAJU-UHFFFAOYSA-N diglycidyl ether Chemical compound C1OC1COCC1CO1 GYZLOYUZLJXAJU-UHFFFAOYSA-N 0.000 description 1
- WHGNXNCOTZPEEK-UHFFFAOYSA-N dimethoxy-methyl-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](C)(OC)CCCOCC1CO1 WHGNXNCOTZPEEK-UHFFFAOYSA-N 0.000 description 1
- 125000002147 dimethylamino group Chemical group [H]C([H])([H])N(*)C([H])([H])[H] 0.000 description 1
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 1
- VFHVQBAGLAREND-UHFFFAOYSA-N diphenylphosphoryl-(2,4,6-trimethylphenyl)methanone Chemical compound CC1=CC(C)=CC(C)=C1C(=O)P(=O)(C=1C=CC=CC=1)C1=CC=CC=C1 VFHVQBAGLAREND-UHFFFAOYSA-N 0.000 description 1
- YWEUIGNSBFLMFL-UHFFFAOYSA-N diphosphonate Chemical compound O=P(=O)OP(=O)=O YWEUIGNSBFLMFL-UHFFFAOYSA-N 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- HQQADJVZYDDRJT-UHFFFAOYSA-N ethene;prop-1-ene Chemical group C=C.CC=C HQQADJVZYDDRJT-UHFFFAOYSA-N 0.000 description 1
- FWDBOZPQNFPOLF-UHFFFAOYSA-N ethenyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)C=C FWDBOZPQNFPOLF-UHFFFAOYSA-N 0.000 description 1
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 description 1
- MBGQQKKTDDNCSG-UHFFFAOYSA-N ethenyl-diethoxy-methylsilane Chemical compound CCO[Si](C)(C=C)OCC MBGQQKKTDDNCSG-UHFFFAOYSA-N 0.000 description 1
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 1
- SBRXLTRZCJVAPH-UHFFFAOYSA-N ethyl(trimethoxy)silane Chemical compound CC[Si](OC)(OC)OC SBRXLTRZCJVAPH-UHFFFAOYSA-N 0.000 description 1
- 239000005038 ethylene vinyl acetate Substances 0.000 description 1
- 229920006244 ethylene-ethyl acrylate Polymers 0.000 description 1
- 229920006225 ethylene-methyl acrylate Polymers 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- YLQWCDOCJODRMT-UHFFFAOYSA-N fluoren-9-one Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3C2=C1 YLQWCDOCJODRMT-UHFFFAOYSA-N 0.000 description 1
- 150000008376 fluorenones Chemical class 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000012948 isocyanate Substances 0.000 description 1
- 150000002513 isocyanates Chemical class 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 229910052901 montmorillonite Inorganic materials 0.000 description 1
- PHQOGHDTIVQXHL-UHFFFAOYSA-N n'-(3-trimethoxysilylpropyl)ethane-1,2-diamine Chemical compound CO[Si](OC)(OC)CCCNCCN PHQOGHDTIVQXHL-UHFFFAOYSA-N 0.000 description 1
- XFFPIAQRIDTSIZ-UHFFFAOYSA-N n'-[3-(dimethoxymethylsilyl)propyl]ethane-1,2-diamine Chemical compound COC(OC)[SiH2]CCCNCCN XFFPIAQRIDTSIZ-UHFFFAOYSA-N 0.000 description 1
- KBJFYLLAMSZSOG-UHFFFAOYSA-N n-(3-trimethoxysilylpropyl)aniline Chemical compound CO[Si](OC)(OC)CCCNC1=CC=CC=C1 KBJFYLLAMSZSOG-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- FZUGPQWGEGAKET-UHFFFAOYSA-N parbenate Chemical compound CCOC(=O)C1=CC=C(N(C)C)C=C1 FZUGPQWGEGAKET-UHFFFAOYSA-N 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 1
- ALIATVYMFGMEJC-UHFFFAOYSA-N phenyl-[2,4,6-tris(methylamino)phenyl]methanone Chemical compound CNC1=CC(NC)=CC(NC)=C1C(=O)C1=CC=CC=C1 ALIATVYMFGMEJC-UHFFFAOYSA-N 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- DLYUQMMRRRQYAE-UHFFFAOYSA-N phosphorus pentoxide Inorganic materials O1P(O2)(=O)OP3(=O)OP1(=O)OP2(=O)O3 DLYUQMMRRRQYAE-UHFFFAOYSA-N 0.000 description 1
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 1
- 229920002857 polybutadiene Polymers 0.000 description 1
- 229920001083 polybutene Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000002952 polymeric resin Substances 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 229920006264 polyurethane film Polymers 0.000 description 1
- OSIVISXRDMXJQR-UHFFFAOYSA-M potassium;2-[ethyl(1,1,2,2,3,3,4,4,5,5,6,6,7,7,8,8,8-heptadecafluorooctylsulfonyl)amino]acetate Chemical compound [K+].[O-]C(=O)CN(CC)S(=O)(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F OSIVISXRDMXJQR-UHFFFAOYSA-M 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 125000005504 styryl group Chemical group 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
- RWSOTUBLDIXVET-UHFFFAOYSA-O sulfonium Chemical compound [SH3+] RWSOTUBLDIXVET-UHFFFAOYSA-O 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- MVQLEZWPIWKLBY-UHFFFAOYSA-N tert-butyl 2-benzoylbenzenecarboperoxoate Chemical class CC(C)(C)OOC(=O)C1=CC=CC=C1C(=O)C1=CC=CC=C1 MVQLEZWPIWKLBY-UHFFFAOYSA-N 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 125000005409 triarylsulfonium group Chemical group 0.000 description 1
- VTHOKNTVYKTUPI-UHFFFAOYSA-N triethoxy-[3-(3-triethoxysilylpropyltetrasulfanyl)propyl]silane Chemical compound CCO[Si](OCC)(OCC)CCCSSSSCCC[Si](OCC)(OCC)OCC VTHOKNTVYKTUPI-UHFFFAOYSA-N 0.000 description 1
- JXUKBNICSRJFAP-UHFFFAOYSA-N triethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CCO[Si](OCC)(OCC)CCCOCC1CO1 JXUKBNICSRJFAP-UHFFFAOYSA-N 0.000 description 1
- ZNOCGWVLWPVKAO-UHFFFAOYSA-N trimethoxy(phenyl)silane Chemical compound CO[Si](OC)(OC)C1=CC=CC=C1 ZNOCGWVLWPVKAO-UHFFFAOYSA-N 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
- YUYCVXFAYWRXLS-UHFFFAOYSA-N trimethoxysilane Chemical compound CO[SiH](OC)OC YUYCVXFAYWRXLS-UHFFFAOYSA-N 0.000 description 1
- 239000000326 ultraviolet stabilizing agent Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 239000012855 volatile organic compound Substances 0.000 description 1
- 150000007964 xanthones Chemical class 0.000 description 1
- 239000010457 zeolite Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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Abstract
Description
本出願は、2017年9月29日付けの韓国特許出願第10-2017-0127801号に基づく優先権の利益を主張し、当該韓国特許出願の文献に開示されたすべての内容は、本明細書の一部として含まれる。
本出願は、有機電子素子の封止方法および有機電子装置に関する。
常温でエポキシ化合物として脂環族エポキシ化合物(Daicel社Celloxide 2021P)および脂肪族エポキシ化合物(HAJIN CHEM TECH社、DE200)、オキセタン基含有化合物(TOAGOSEI社のOXT-221)、ヨードニウム塩を含む光開始剤(Tetrachem社のTTA-UV694、以下、UV694という)およびフッ素系界面活性剤(DIC社のF552)をそれぞれ23.8:28.7:41.5:5.0:1.0(Celloxide2021P:DE200:OXT-221:UV694:F552)の重量比率で混合容器に投入した。
前記製造されたインク組成物をUnijet UJ-200(Inkjet head-Dimatix 10Pl 256)を使用して有機電子素子が形成された基板上にインクジェッティングして印刷パターンを形成した。前記インク組成物のドットの平均ピッチを40μmとして、印刷パターンを形成し、前記印刷パターン間の平均間隔を180μmとして有機層パターンを形成した。基板上に塗布された印刷パターンに対して振動装置を利用して40KHzの強度で0.01秒間振動を加えた。
塗布された印刷パターンに対して振動を10秒間加えたことを除いて、実施例1と同じ方法で有機電子装置を製造した。
塗布された印刷パターンに対して振動を40秒間加えたことを除いて、実施例1と同じ方法で有機電子装置を製造した。
塗布された印刷パターンに対して振動を240秒間加えたことを除いて、実施例1と同じ方法で有機電子装置を製造した。
振動強度を100KHzに変更したことを除いて、実施例1と同じ方法で有機電子装置を製造した。
振動強度を100KHzに変更したことを除いて、実施例2と同じ方法で有機電子装置を製造した。
振動強度を100KHzに変更したことを除いて、実施例3と同じ方法で有機電子装置を製造した。
振動強度を100KHzに変更したことを除いて、実施例4と同じ方法で有機電子装置を製造した。
常温でエポキシ化合物として脂環族エポキシ化合物(Daicel社Celloxide 2021P)および脂肪族エポキシ化合物(HAJIN CHEM TECH社、DE200)、オキセタン基含有化合物(TOAGOSEI社のOXT-221)、ヨードニウム塩を含む光開始剤(Tetrachem社のTTA-UV694、以下、UV694という)およびフッ素系界面活性剤(DIC社のF552)をそれぞれ43.8:28.7:17.5:5.0:1.0(Celloxide2021P:DE200:OXT-221:UV694:F552)の重量比率で混合容器に投入した。
常温でエポキシ化合物として脂環族エポキシ化合物(Daicel社Celloxide 2021P)および脂肪族エポキシ化合物(HAJIN CHEM TECH社、DE200)、オキセタン基含有化合物(TOAGOSEI社のOXT-221)、ヨードニウム塩を含む光開始剤(Tetrachem社のTTA-UV694、以下、UV694という)およびシリコン系界面活性剤(BYK-3455)をそれぞれ23.8:28.7:41.5:5.0:1.0(Celloxide2021P:DE200:OXT-221:UV694:BYK-3455)の重量比率で混合容器に投入した。
振動を加えることなく、印刷パターンの形成後に0.01秒の待機時間後にUVを照射したことを除いて、実施例1と同じ方法で有機電子装置を製造した。
振動を加えることなく、印刷パターンの形成後に10秒の待機時間後にUVを照射したことを除いて、実施例1と同じ方法で有機電子装置を製造した。
振動を加えることなく、印刷パターンの形成後に40秒の待機時間後にUVを照射したことを除いて、実施例1と同じ方法で有機電子装置を製造した。
振動を加えることなく、印刷パターンの形成後に240秒の待機時間後にUVを照射したことを除いて、実施例1と同じ方法で有機電子装置を製造した。
実施例および比較例で製造された硬化した有機層に対して、図2のように、有機層の厚さHに対する1次パターンと2次パターンとの間の溝部の高さhの比率h/H×100を測定して計算した。前記有機層の厚さは、平均厚さを測定した。前記測定は、Alpha step(KLA-Tencor)を使用して厚さHおよび溝部の高さhを測定した。
I 間隔
H 有機層厚さ
h 溝部の高さ
3 有機電子装置
31 基板
32 有機電子素子
33 有機層
34 無機層
35 無機層(無機保護膜)
36 封止構造
37 封止フィルム
38 カバー基板
Claims (17)
- 有機電子素子が形成された基板上にインク組成物を塗布する段階と、前記塗布されたインク組成物に0.5~150KHzの強度で振動を加える段階と、を含む有機電子素子の封止方法。
- 振動を加える段階は、0.001~300秒の範囲内で行われる、請求項1に記載の有機電子素子の封止方法。
- インク組成物を塗布する段階は、50dpi~1000dpiの範囲内で行われる、請求項1または2に記載の有機電子素子の封止方法。
- 塗布されたインク組成物は、2~15μmの厚さを有する、請求項1から3のいずれか一項に記載の有機電子素子の封止方法。
- インク組成物を塗布する段階は、一方向に延長する印刷パターンを2以上形成することを含む、請求項1から4のいずれか一項に記載の有機電子素子の封止方法。
- 印刷パターンは、2以上のインク組成物ドットで形成され、前記ドットのピッチは、10~250μmの範囲内である、請求項5に記載の有機電子素子の封止方法。
- 塗布する段階後であって振動を加える段階前に、一方向に延長する印刷パターンの間に10~250μmの間隔が一つ以上存在する、請求項5に記載の有機電子素子の封止方法。
- 塗布されたインク組成物を硬化する段階をさらに含む、請求項1から7のいずれか一項に記載の有機電子素子の封止方法。
- 硬化する段階は、光を照射することを含む、請求項8に記載の有機電子素子の封止方法。
- 塗布されたインク組成物に熱を加える段階をさらに含む、請求項1から9のいずれか一項に記載の有機電子素子の封止方法。
- 熱を加える段階は、塗布されたインク組成物の硬化前および/または後に行われる、請求項10に記載の有機電子素子の封止方法。
- 熱を加える段階は、20℃~230℃の範囲内で行われる、請求項10または11に記載の有機電子素子の封止方法。
- 熱を加える段階は、1分~40分間のうちいずれかの時間で行われる、請求項10から12のいずれか一項に記載の有機電子素子の封止方法。
- インク組成物は、無溶剤タイプの光硬化性組成物である、請求項1から13のいずれか一項に記載の有機電子素子の封止方法。
- インク組成物は、エポキシ化合物および前記エポキシ化合物100重量部に対して45重量部~145重量部で含まれるオキセタン基を有する化合物を含む、請求項1から14のいずれか一項に記載の有機電子素子の封止方法。
- インク組成物は、フッ素系界面活性剤を含む、請求項1から15のいずれか一項に記載の有機電子素子の封止方法。
- 有機電子素子が形成された基板上に、一方向に延長した1次パターンと、一方向に延長し、前記1次パターンと隣接して形成された2次パターンとを含む有機層の形態でインク組成物が硬化した状態で、前記有機層の厚さHに対する前記1次パターンと前記2次パターンとの間の溝部の高さhの比率h/H×100が30%未満である有機電子装置。
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