JP2021132158A - 基板液処理装置及び液体吐出評価方法 - Google Patents
基板液処理装置及び液体吐出評価方法 Download PDFInfo
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Abstract
Description
次に、吐出位置ずれ情報の導出方法の典型例について説明する。
液体吐出ノズル19からの液体が基板Wの所望位置からずれた位置に着地する現象(すなわち「吐出位置ずれ」)は、様々な要因で生じる。
吐出位置ずれ量の算出方法の具体例について説明する。以下に説明する例において、旋回軸線A2を中心とした液体吐出ノズル19の移動の速度は、ノズル経路(すなわち第1ノズル経路41及び第2ノズル経路42)によらず、一定である。
特定スポット45aは、基板Wのうちの1箇所のみであってもよいし(図4参照)、基板Wのうちのお互いに離れた複数箇所であってもよい。すなわち温度測定部20によって取得されるスポット温度は、基板Wのうちの1箇所の特定スポット45aを対象として得られる測定温度に基づいていてもよいし、基板Wのうちの複数箇所の特定スポット45aを対象として得られる測定温度に基づいていてもよい。複数の特定スポット45aに基づいて得られるスポット温度は、例えば、それぞれの特定スポット45aで得られるスポット温度の平均値であってもよい。或いは、それぞれの特定スポット45aで得られるスポット温度に固有の係数を掛け合わせて得られる値の和によって、スポット温度が導き出されてもよい。
11 基板保持部
13 回転機構
15 液体供給部
16 ノズル駆動部
17 駆動アーム
19 液体吐出ノズル
20 温度測定部
41 第1ノズル経路
42 第2ノズル経路
45a 特定スポット
50 液体
93 制御部
A1 回転軸線
W 基板
Claims (10)
- 基板を保持する基板保持部と、
回転軸線を中心に前記基板を回転させる回転機構と、
前記基板と異なる温度の液体を吐出する第1液体吐出ノズルと、前記第1液体吐出ノズルを移動させるノズル移動機構と、を具備する液体供給部と、
前記基板の表面のうちの特定スポットの温度及び前記特定スポット上の前記液体の温度のうちの少なくともいずれか一方であるスポット温度を測定する温度測定部と、
前記液体供給部を制御し、前記第1液体吐出ノズルを移動させつつ前記第1液体吐出ノズルから前記基板の前記表面に向けて前記液体を吐出させて、前記基板の前記表面における前記液体の着地位置を継続的に変える制御部であって、前記第1液体吐出ノズルを第1ノズル経路に沿って移動させた場合に前記温度測定部によって測定される前記スポット温度に基づく第1温度情報と、前記第1液体吐出ノズルを前記第1ノズル経路とは異なる第2ノズル経路に沿って移動させた場合に前記温度測定部によって測定される前記スポット温度に基づく第2温度情報とを比較することによって、前記液体供給部の吐出位置ずれ情報を導き出す制御部と、
を備える基板液処理装置。 - 前記第1温度情報及び前記第2温度情報は、前記基板を回転させながら前記基板の前記表面における前記液体の着地位置を継続的に変えることによって得られる前記スポット温度の測定結果に基づいており、
前記第1温度情報を取得する場合、前記第1ノズル経路に沿って移動する前記第1液体吐出ノズルから吐出された前記液体の前記基板の前記表面における着地位置の軌跡は、前記基板の前記表面のうち前記回転軸線からの距離が前記回転軸線と前記特定スポットとの間の距離に等しい特定環状領域を、通過し、
前記第2温度情報を取得する場合、前記第2ノズル経路に沿って移動する前記第1液体吐出ノズルから吐出された前記液体の前記基板の前記表面における着地位置の軌跡は、前記特定環状領域を通過する請求項1に記載の基板液処理装置。 - 前記第1液体吐出ノズルは円弧状の移動軌道に沿って移動し、
前記第1ノズル経路は、前記移動軌道に沿って前記移動軌道の一方側から他方側に向かう経路であり、
前記第2ノズル経路は、前記移動軌道に沿って前記移動軌道の前記他方側から前記一方側に向かう経路である請求項1又は2に記載の基板液処理装置。 - 前記ノズル移動機構は、前記第1液体吐出ノズルとともに移動する駆動アームを有し、
前記吐出位置ずれ情報は、前記駆動アームの移動位置のずれに関する情報を含む請求項1〜3のいずれか一項に記載の基板液処理装置。 - 前記液体供給部は第2液体吐出ノズルを具備し、
前記吐出位置ずれ情報は、前記第1液体吐出ノズルに接続される液体供給管と前記第2液体吐出ノズルに接続される液体供給管との間の配管エラーに関する情報を含む請求項1〜4のいずれか一項に記載の基板液処理装置。 - 前記吐出位置ずれ情報は、前記第1液体吐出ノズルからの前記液体の吐出方向のずれに関する情報を含む請求項1〜5のいずれか一項に記載の基板液処理装置。
- 前記第1温度情報及び前記第2温度情報の各々は、前記基板の前記表面のエッジからの前記第1液体吐出ノズルの移動時間と、前記温度測定部により測定される前記スポット温度と、に基づいて定められる経時温度情報を含み、
前記制御部は、前記第1温度情報の前記経時温度情報において閾値温度に対応づけられる前記移動時間と、前記第2温度情報の前記経時温度情報において前記閾値温度に対応づけられる前記移動時間と、を比較することによって前記吐出位置ずれ情報を導き出す請求項1〜6のいずれか一項に記載の基板液処理装置。 - 前記閾値温度は、前記第1温度情報の前記経時温度情報についての前記スポット温度の前記移動時間に関する微分係数と、前記第2温度情報の前記経時温度情報についての前記スポット温度の前記移動時間に関する微分係数と、に基づいて定められる請求項7に記載の基板液処理装置。
- 前記第1温度情報及び前記第2温度情報の各々は、前記基板の前記表面のエッジからの前記第1液体吐出ノズルの移動時間と、前記温度測定部により測定される前記スポット温度と、基づいて定められる経時温度情報を含み、
前記制御部は、前記第1温度情報の前記経時温度情報についての前記スポット温度の前記移動時間に関する微分係数に基づいて定められる第1基準移動時間と、前記第2温度情報の前記経時温度情報についての前記スポット温度の前記移動時間に関する微分係数に基づいて定められる第2基準移動時間と、を比較することによって前記吐出位置ずれ情報を導き出す請求項1〜6のいずれか一項に記載の基板液処理装置。 - 第1液体吐出ノズルを第1ノズル経路に沿って移動させつつ前記第1液体吐出ノズルから基板の表面に向けて液体を吐出させることによって、前記基板の前記表面における前記液体の着地位置を継続的に変えながら、前記基板の表面のうちの特定スポットの温度及び前記特定スポット上の前記液体の温度のうちの少なくともいずれか一方であるスポット温度を測定する工程と、
前記第1液体吐出ノズルを前記第1ノズル経路とは異なる第2ノズル経路に沿って移動させつつ前記第1液体吐出ノズルから前記基板の前記表面に向けて前記液体を吐出させることによって、前記基板の前記表面における前記液体の着地位置を継続的に変えながら、前記スポット温度を測定する工程と、
前記第1液体吐出ノズルを前記第1ノズル経路に沿って移動させた場合に得られる前記スポット温度に基づく第1温度情報と、前記第1液体吐出ノズルを前記第2ノズル経路に沿って移動させた場合に得られる前記スポット温度に基づく第2温度情報とを比較することによって、吐出位置ずれ情報を導き出す工程と
を含む液体吐出評価方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020027414A JP7362505B2 (ja) | 2020-02-20 | 2020-02-20 | 基板液処理装置及び液体吐出評価方法 |
KR1020210018574A KR20210106356A (ko) | 2020-02-20 | 2021-02-09 | 기판 액 처리 장치 및 액체 토출 평가 방법 |
CN202110182809.0A CN113275193B (zh) | 2020-02-20 | 2021-02-10 | 基片液处理装置和液体释放评价方法 |
US17/179,551 US20210260612A1 (en) | 2020-02-20 | 2021-02-19 | Substrate liquid processing apparatus and liquid discharge evaluation method |
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JP2003234280A (ja) * | 2002-02-08 | 2003-08-22 | Dainippon Screen Mfg Co Ltd | 基板処理ユニットおよび基板処理装置 |
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JP2015103656A (ja) * | 2013-11-25 | 2015-06-04 | 東京エレクトロン株式会社 | 液処理装置、液処理方法及び記憶媒体 |
WO2019146456A1 (ja) * | 2018-01-26 | 2019-08-01 | 東京エレクトロン株式会社 | 基板処理装置 |
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JP5036290B2 (ja) * | 2006-12-12 | 2012-09-26 | 東京エレクトロン株式会社 | 基板処理装置および基板搬送方法、ならびにコンピュータプログラム |
JP5976276B2 (ja) * | 2011-01-11 | 2016-08-23 | セイコーエプソン株式会社 | 液体噴射装置 |
WO2013018197A1 (ja) * | 2011-08-02 | 2013-02-07 | 有限会社ワイ・システムズ | 半導体層の温度測定方法および温度測定装置 |
JP5146618B1 (ja) * | 2012-05-30 | 2013-02-20 | 富士ゼロックス株式会社 | 発光素子の製造方法 |
JP5954776B2 (ja) | 2012-05-30 | 2016-07-20 | 株式会社Screenホールディングス | 基板処理装置 |
JP6289961B2 (ja) * | 2014-03-27 | 2018-03-07 | 芝浦メカトロニクス株式会社 | 基板処理装置及び基板処理方法 |
JP6389089B2 (ja) * | 2014-09-18 | 2018-09-12 | 株式会社Screenホールディングス | 基板処理装置および基板処理方法 |
JP6707386B2 (ja) * | 2016-04-07 | 2020-06-10 | 東京エレクトロン株式会社 | めっき処理装置、めっき処理方法及び記憶媒体 |
JP6925143B2 (ja) * | 2017-03-07 | 2021-08-25 | 東京エレクトロン株式会社 | 液滴吐出装置、液滴吐出方法、プログラム及びコンピュータ記憶媒体 |
JP6846238B2 (ja) * | 2017-03-07 | 2021-03-24 | 東京エレクトロン株式会社 | 液滴吐出装置、液滴吐出方法、プログラム及びコンピュータ記憶媒体 |
JP7034011B2 (ja) * | 2018-06-06 | 2022-03-11 | 東京エレクトロン株式会社 | 基板処理装置および基板温度計測方法 |
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JP2003234280A (ja) * | 2002-02-08 | 2003-08-22 | Dainippon Screen Mfg Co Ltd | 基板処理ユニットおよび基板処理装置 |
JP2011077245A (ja) * | 2009-09-30 | 2011-04-14 | Dainippon Screen Mfg Co Ltd | 基板処理装置およびティーチング方法 |
JP2015103656A (ja) * | 2013-11-25 | 2015-06-04 | 東京エレクトロン株式会社 | 液処理装置、液処理方法及び記憶媒体 |
WO2019146456A1 (ja) * | 2018-01-26 | 2019-08-01 | 東京エレクトロン株式会社 | 基板処理装置 |
JP2020004817A (ja) * | 2018-06-27 | 2020-01-09 | 株式会社Screenホールディングス | 補正方法、基板処理装置、及び基板処理システム |
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