JP2021128300A - Photosensitive resin composition and method for manufacturing semiconductor devices - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a photosensitive resin composition excellent in film formation property and suppression of foreign matter generation after development treatment.
A photosensitive resin composition contains an epoxy resin, a phenoxy resin, and a fluorine-based surfactant, and the fluorine-based surfactant is (a) -N (R) -SO _2- Rf ( The R represents an organic group, and Rf is a compound having a structural unit represented by a perfluoroalkyl group).
[Selection diagram] None

Description

The present invention relates to a photosensitive resin composition and a method for manufacturing a semiconductor device.

Various studies have been made on techniques for improving the film-forming property of photosensitive resin compositions. As a technique of this kind, for example, the technique described in Patent Document 1 is known. Patent Document 1 shows that BYK-377 (surfactant) is used as a component of the photosensitive resin composition (Examples 2, 4, and 5 in Table 1).

Japanese Unexamined Patent Publication No. 2016-186609

As a result of the examination by the present inventor, it has been found that the photosensitive resin composition described in Patent Document 1 has room for improvement in terms of film forming property and suppression of foreign matter generation after development treatment.

As a result of further studies, the present inventor has found that when a photosensitive resin film made of a photosensitive resin composition is formed, the film forming property can be improved by adding a surfactant. However, when the photosensitive resin film containing the surfactant was subjected to an exposure development treatment, it was found that foreign matter was generated on the film surface.
Specifically, when a surfactant is not added to the photosensitive resin composition, the film-forming property may be lowered and the in-plane film thickness uniformity may be deteriorated. On the other hand, by adding a surfactant to the photosensitive resin composition, the film forming property such as film thickness uniformity at the time of coating is enhanced, and the photosensitive resin film (dry film) made of the photosensitive resin composition is formed. ) Was obtained. On the other hand, it has been found that foreign matter is generated on the surface of the developed film obtained by developing the photosensitive resin film containing the surfactant. That is, when the photosensitive resin film is subjected to an exposure development process and a process in which the developer is not washed with an appropriate rinse solution is adopted, foreign matter due to the developer residue may be generated on the film surface.

Based on these findings, further diligent research revealed that by selecting an appropriate surfactant for the photosensitive resin composition containing the epoxy resin and the phenoxy resin, the film-forming property was improved and the development treatment was performed. It was found that the generation of foreign matter on the surface of the film afterwards can be suppressed. Specifically, fluorine-based surfactant, a compound having a structural unit represented by _{(a) -N (R) -SO} 2 -Rf ( wherein R represents an organic group, Rf is a perfluoroalkyl group) We have found that it is effective and have completed the present invention.

According to the present invention
A photosensitive resin composition containing an epoxy resin, a phenoxy resin, and a fluorine-based surfactant.
The fluorine-based surfactant is a compound having a structural unit represented by _{(a) -N (R) -SO} 2 -Rf ( wherein R represents an organic group, Rf is a perfluoroalkyl group), a photosensitive A resin composition is provided.

Further, according to the present invention.
The process of preparing a structure in which a plurality of semiconductor chips having connection terminals on the surface are embedded inside the encapsulant, and
A step of forming a first insulating resin film in an on-plane region of the structure on the side where connection terminals provided on the semiconductor chip are arranged.
A step of forming a first opening in the first insulating resin film and the structure to expose a part of the connection terminal.
A step of forming a conductive film so as to cover the exposed connection terminal and at least a part of the first insulating resin film.
A step of forming a second insulating resin film on the surface of the conductive film and
A step of forming a second opening in which a part of the conductive film is exposed in the second insulating resin film, and a step of forming the second opening.
Including
Provided is a method for manufacturing a semiconductor device, wherein the resin material constituting the first insulating resin film is the above-mentioned photosensitive resin composition.

INDUSTRIAL APPLICABILITY According to the present invention, there is provided a photosensitive resin composition excellent in film formation property and suppression of foreign matter generation after development treatment, and a method for manufacturing a semiconductor device using the same.

It is a figure for demonstrating an example of the manufacturing method of the semiconductor device which concerns on this Embodiment. It is a figure for demonstrating an example of the manufacturing method of the semiconductor device which concerns on this Embodiment. It is a figure for demonstrating an example of the manufacturing method of the semiconductor device which concerns on this Embodiment.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
In all drawings, similar components are designated by the same reference numerals, and description thereof will be omitted as appropriate.
In order to avoid complication, when there are a plurality of the same components in the same drawing, only one of them may be coded and all of them may not be coded.
All drawings are for illustration purposes only. The shape and dimensional ratio of each member in the drawing do not necessarily correspond to the actual article.

In the present specification, the notation "a to b" in the description of the numerical range means a or more and b or less unless otherwise specified. For example, "1 to 5% by mass" means "1% by mass or more and 5% by mass or less".

In the notation of a group (atomic group) in the present specification, the notation that does not indicate whether it is substituted or unsubstituted includes both those having no substituent and those having a substituent. For example, the "alkyl group" includes not only an alkyl group having no substituent (unsubstituted alkyl group) but also an alkyl group having a substituent (substituted alkyl group).
The notation "(meth) acrylic" herein represents a concept that includes both acrylic and methacryl. The same applies to similar notations such as "(meth) acrylate".
The term "electronic device" as used herein refers to an element to which electronic engineering technology is applied, such as a semiconductor chip, a semiconductor element, a printed wiring board, an electric circuit display device, an information communication terminal, a light emitting diode, a physical battery, and a chemical battery. , Devices, final products, etc.

<Photosensitive resin composition>
The photosensitive resin composition of the present embodiment contains an epoxy resin, a phenoxy resin, and a fluorine-based surfactant, and the fluorine-based surfactant is (a) -N (R) -SO _2- Rf (a) -N (R) -SO 2-Rf ( The R is an organic group, and Rf is a compound having a structural unit represented by a perfluoroalkyl group). As a result, it is possible to improve the film forming property and the suppression of foreign matter generation after the development process. Although the details of the reason are not clear, the photosensitive resin composition of the present embodiment contains a phenoxy resin, that is, a polyhydroxypolyether synthesized from bisphenols and epichlorohydrin. Epoxy equivalents of phenoxy resins are usually much higher than the epoxy equivalents of epoxy resins (ie, the epoxy group content is much lower or has no epoxy groups). As a result, excessive thermosetting is suppressed, and since the phenoxy resin is generally thermoplastic, it is considered that appropriate fluidity can be obtained during heating. Further, it is presumed that by adding a specific fluorine-based surfactant, sufficient film-forming property can be obtained by these synergistic effects, and the generation of foreign substances on the film surface after the development treatment can be suppressed.

The photosensitive resin composition of the present embodiment is suitably used for a fan-out wafer level package (FOWLP) type (also referred to as a fan-out type) semiconductor device. The fan-out wafer level package refers to a package form in which a rewiring layer (having wiring and an insulating film) is formed larger than the outer shape of the semiconductor chip and is fan-out from the semiconductor chip. In a fan-out type semiconductor device, it is necessary to satisfactorily form the insulating film of the rewiring layer not only on the semiconductor chip but also on the mold resin as a sealing material. Therefore, the photosensitive resin composition of the present embodiment is excellent in film formation property and suppression of foreign matter generation after the development treatment, and can satisfactorily form a film on the mold resin.

Hereinafter, the components and properties of the photosensitive resin composition of the present embodiment will be described.

[Epoxy resin]
The photosensitive resin composition of the present embodiment contains an epoxy resin.
As the epoxy resin, for example, an epoxy resin having two or more epoxy groups in one molecule can be used. As the epoxy resin, monomers, oligomers, and polymers in general can be used. The molecular weight and molecular structure of the epoxy resin are not particularly limited.

Examples of the epoxy resin include phenol novolac type epoxy resin, cresol novolac type epoxy resin, cresol naphthol type epoxy resin, biphenyl type epoxy resin, biphenyl aralkyl type epoxy resin, phenoxy resin, naphthalene skeleton type epoxy resin, and bisphenol A type epoxy resin. , Bisphenol A diglycidyl ether type epoxy resin, bisphenol F type epoxy resin, bisphenol F diglycidyl ether type epoxy resin, bisphenol S diglycidyl ether type epoxy resin, glycidyl ether type epoxy resin, aromatic polyfunctional epoxy resin, aliphatic epoxy Examples thereof include resins, aliphatic polyfunctional epoxy resins, alicyclic epoxy resins, and polyfunctional alicyclic epoxy resins.
The epoxy resin may be used alone or in combination of two or more.

The epoxy resin can include a solid epoxy resin having two or more epoxy groups in the molecule. As the solid epoxy resin, a resin having two or more epoxy groups and solid at 25 ° C. (room temperature) can be used. Thereby, the mechanical properties of the photosensitive resin composition in the resin film can be enhanced.

The epoxy resin preferably contains a trifunctional or higher functional epoxy resin in the molecule (that is, a polyfunctional epoxy resin having three or more epoxy groups in one molecule). As a result, the film is sufficiently cured, and for example, the heat resistance and durability of the permanent film can be improved. Further, the high heat resistance means that the properties of the permanent film are unlikely to change even by heating, which leads to further improvement of flatness.

Examples of the trifunctional or higher functional epoxy resin include phenol novolac type epoxy resin, cresol novolac type epoxy resin, triphenylmethane type epoxy resin, dicyclopentadiene type epoxy resin, bisphenol A type epoxy resin, and tetramethylbisphenol F. It is preferable to contain one or more kinds of epoxy resins selected from the group consisting of type epoxy resins, and it is more preferable to contain a triphenylmethane type epoxy resin or a novolak type epoxy resin. As a result, an appropriate coefficient of thermal expansion can be realized while increasing the heat resistance of the resin film.

The epoxy resin may contain a liquid epoxy resin having two or more epoxy groups in the molecule. The liquid epoxy resin functions as a filming agent and can improve the brittleness of the resin film of the photosensitive resin composition.

As the liquid epoxy resin, an epoxy compound having two or more epoxy groups and being liquid at room temperature of 25 ° C. can be used. The viscosity of the liquid epoxy resin at 25 ° C. is, for example, 1 to 8000 mPa · s, preferably 5 to 1500 mPa · s, and more preferably 10 to 1400 mPa · s.

The liquid epoxy resin can include, for example, one or more selected from the group consisting of bisphenol A diglycidyl ether, bisphenol F diglycidyl ether, alkyl diglycidyl ether and alicyclic epoxy. These may be used alone or in combination of two or more. Among these, alkyl diglycidyl ether can be used from the viewpoint of reducing cracks after development.

The epoxy equivalent of the liquid epoxy resin is, for example, 100 to 200 g / eq, preferably 105 to 180 g / eq, and more preferably 110 to 170 g / eq. Thereby, the brittleness of the resin film can be improved.

The lower limit of the content of the liquid epoxy resin is, for example, 5% by mass or more, preferably 10% by mass or more, and more preferably 15% by mass or more with respect to the entire non-volatile component of the photosensitive resin composition. Thereby, the brittleness of the finally obtained cured film can be improved.
The upper limit of the content of the liquid epoxy resin is, for example, 40% by mass or less, preferably 35% by mass or less, and more preferably 30% by mass or less with respect to the entire non-volatile component of the photosensitive resin composition. Thereby, the film characteristics of the cured film can be balanced.

The lower limit of the content of the epoxy resin is, for example, 40% by mass or more, preferably 45% by mass or more, and more preferably 50% by mass or more with respect to the entire non-volatile component of the photosensitive resin composition. As a result, the heat resistance and mechanical strength of the finally obtained cured film can be improved.
The upper limit of the content of the epoxy resin is, for example, 90% by mass or less, preferably 85% by mass or less, and more preferably 80% by mass or less with respect to the entire non-volatile component of the photosensitive resin composition. Thereby, the patterning property can be improved.
Here, the non-volatile component of the photosensitive resin composition means the balance excluding the volatile components such as water and solvent. The content of the photosensitive resin composition with respect to the entire non-volatile component refers to the content of the photosensitive resin composition with respect to the entire non-volatile component excluding the solvent when the solvent is contained.

The weight average molecular weight (Mw) of the epoxy resin is not particularly limited. Mw is, for example, 300 to 9000, preferably 500 to 8000. By using an epoxy resin having a relatively low molecular weight, the reactivity at the time of exposure can be enhanced.

The photosensitive resin composition of the present embodiment may contain a thermosetting resin other than the epoxy resin. Examples of other thermosetting resins include resins having a triazine ring such as urea resin and melamine resin; unsaturated polyester resin; maleimide resin such as bismaleimide compound; polyurethane resin; diallyl phthalate resin; silicone resin. Examples thereof include benzoxazine resin; polyimide resin; polyamideimide resin; benzocyclobutene resin, novolak type cyanate resin, bisphenol A type cyanate resin, bisphenol E type cyanate resin, and tetramethylbisphenol F type cyanate resin.
When other thermosetting resins are used, they may be used alone or in combination of two or more.

[Phenoxy resin]
The photosensitive resin composition of the present embodiment contains a phenoxy resin. It is considered that the phenoxy resin also has a function of increasing the flexibility of the film.

Examples of the phenoxy resin include bisphenol A type phenoxy resin, bisphenol F type phenoxy resin, bisphenol A type and bisphenol F type copolymerized phenoxy resin, biphenyl type phenoxy resin, bisphenol S type phenoxy resin, biphenyl type phenoxy resin and bisphenol. Examples thereof include a copolymerized phenoxy resin with an S-type phenoxy resin. Of these, a bisphenol A type phenoxy resin or a copolymerized phenoxy resin of a bisphenol A type and a bisphenol F type is preferable.
The phenoxy resin may be used alone or in combination of two or more.

The weight average molecular weight (Mw) of the phenoxy resin is preferably 10,000 to 100,000, more preferably 20,000 to 80,000, and even more preferably 35,000 to 80,000.
Since the Mw of the phenoxy resin is relatively large, curing shrinkage can be further suppressed, and flatness can be further improved. The details of this mechanism are unknown, but it is speculated that when Mw is relatively large, the thermal motion of the molecular chain is suppressed, and as a result, the flatness is further improved.
On the other hand, the Mw of the phenoxy resin is preferably 100,000 or less in terms of solvent solubility and the like.
The weight average molecular weight is measured, for example, as a polystyrene-equivalent value in a gel permeation chromatography (GPC) method.

The phenoxy resin may have a reactive group such as an epoxy group at both ends of the molecular chain or inside the molecular chain. The reactive group in the phenoxy resin is one capable of cross-linking with the epoxy group in the epoxy resin. By using such a phenoxy resin, the solvent resistance and heat resistance in the resin film can be enhanced.

As the phenoxy resin, one that is solid at 25 ° C. is preferably used. Specifically, a phenoxy resin having a non-volatile content of 90% by mass or more is preferably used. By using such a phenoxy resin, the mechanical properties of the cured product can be improved.

The lower limit of the content of the phenoxy resin is preferably 20 parts by mass or more, more preferably 25 parts by mass or more, and further preferably 30 parts by mass or more with respect to 100 parts by mass of the epoxy resin. Thereby, sufficient flexibility can be obtained. In addition, it is considered that the effect of flattening the film surface by suppressing excessive thermosetting and flowing as described above as an estimation mechanism can be sufficiently obtained.
The upper limit of the content of the phenoxy resin is preferably 60 parts by mass or less, more preferably 55 parts by mass or less, and further preferably 50 parts by mass or less with respect to 100 parts by mass of the epoxy resin. As a result, the phenoxy resin is sufficiently dissolved in the solvent described later, and a photosensitive resin composition having excellent coatability can be obtained.

The photosensitive resin composition of the present embodiment may contain a thermoplastic resin other than the phenoxy resin. Examples of the thermoplastic resin include polyvinyl acetal resin, (meth) acrylic resin, polyamide resin (for example, nylon), thermoplastic urethane resin, polyolefin resin (for example, polyethylene, polypropylene, etc.), polycarbonate, and polyester resin (for example, polyethylene). For example, polyethylene terephthalate, polybutylene terephthalate, etc.), polyacetal, polyphenylene sulfide, polyether ether ketone, liquid crystal polymer, fluororesin (for example, polytetrafluoroethylene, polyvinylidene fluoride, etc.), modified polyphenylene ether, polysulfone, polyether sulfone, poly Examples thereof include allylate, polyamideimide, polyetherimide, and thermoplastic polyimide.
When other thermoplastic resins are used, they may be used alone or in combination of two or more.

[Fluorine-based surfactant]
_{Fluorosurfactants, (a) -N (R)} -SO 2 -Rf ( wherein R represents an organic group, Rf is a perfluoroalkyl group) is a compound having a structural unit represented by. (A) As the perfluoroalkyl group (hereinafter also referred to "Rf _{group"), -C m F 2m + 1} - (m is 1 to 20, preferably an integer of 2 to 10) monovalent perfluoro represented by _alkyl, -C _{m F 2m} - (in m 1 to 20, preferably an integer of 2 to 10), etc. divalent perfluoroalkyl group represented by. Specifically, as the Rf group, -CF ₃ , -CF ₂ CF ₃ , -CF ₂ CF ₂ CF ₃ , -CF (CF ₃ ) ₂ , -CF ₂ CF ₂ CF ₂ CF ₃ , -CF ₂ CF ( CF ₃ ) ₂ , -C (CF ₃ ) ₃ ,-(CF ₂ ) ₄ CF ₃ ,-(CF ₂ ) ₂ CF (CF ₃ ) ₂ , -CF ₂ C (CF ₃ ) ₃ , -CF (CF ₃₎ ) CF ₂ CF ₂ CF ₃ ,-(CF ₂ ) ₅ CF ₃ ,-(CF ₂ ) ₃ CF (CF ₃ ) ₂ ,-(CF ₂ ) ₄ CF (CF ₃ ) ₂ , -C ₈ F ₁₇ etc. Can be mentioned.
Among them, −CF ₂ CF ₂ CF ₂ CF ₃ , − (CF ₂ ) ₄ CF ₃ , − (CF ₂ ) ₅ CF ₃ are preferable, and − (CF ₂ ) ₄ CF ₃ is more preferable.

Although R is an organic group, hydrogen or an alkyl group having 1 to 18 carbon atoms is preferable.

Further, the fluorine-based surfactant is preferably a copolymer having (b) a structural unit containing a polyoxyalkylene group, and more preferably a compound represented by the following formula (1).

（式（１）において、ｍ／（ｍ＋ｎ）は０〜１であり、Ｒ_１は水素、または１〜１８の炭素原子を有するアルキル基を示し、Ｒ_２は水素または１〜１８の炭素原子を有するアルキル基を示し、あるいはＲ_２は分子間もしくは分子内架橋を生成するアクリレートポリマーバックボーンへの結合点を示し、ｘは１〜１０の数、ａは１〜５０の数、ｂは１〜１００の数、ｃは１〜５０の数をそれぞれ示す。）

(In the formula (1), m / (m + n) is 0 to ₁ , R 1 represents hydrogen or an alkyl group having 1 to 18 carbon atoms, and R ₂ represents hydrogen or 1 to 18 carbon atoms. Indicates an alkyl group having, or R ₂ indicates a bond point to an acrylate polymer backbone that produces intermolecular or intramolecular crosslinks, x is a number from 1 to 10, a is a number from 1 to 50, and b is a number from 1 to 100. , C indicates a number from 1 to 50, respectively.)

In the present embodiment, the amount of the fluorine-based surfactant is preferably 0.01 parts by mass to 1 part by mass, and more preferably 0.03 parts by mass to 0.5 parts by mass with respect to 100 parts by mass of the epoxy resin. preferable. By setting the content of the fluorine-based surfactant to the above lower limit value or more, it becomes easy to suppress the generation of foreign substances while maintaining good film forming properties. On the other hand, by setting the content of the fluorine-based surfactant to the above upper limit value or less, the balance between the suppression of the generation of foreign substances and the good film forming property can be improved.

The photosensitive resin composition of the present embodiment may contain other additives, if necessary, in addition to the above-mentioned components. Other additives include silicone-based surfactants other than the above, alkyl-based surfactants, surfactants such as acrylic-based surfactants, photosensitizers, antioxidants, fillers such as silica, and sensitizers. , Filming agents, adhesion aids and the like.

[Photosensitizer]
The photosensitive resin composition of the present embodiment may contain a photosensitive agent. As a result, the patterning performance of the photosensitive resin composition, such as sensitivity and resolution, can be improved.
The photosensitizer typically comprises a photoacid generator, i.e. a compound that generates an acid upon irradiation with light such as g-ray or i-ray.
The photosensitive resin composition of the present embodiment is usually a chemically amplified photosensitive resin composition in which an acid generated from a photoacid generator acts as an initiator.
The photosensitive resin composition of the present embodiment is usually a negative type. That is, at the time of development, the exposed portion usually remains and the unexposed portion is removed.

Examples of the photosensitizer include onium salt compounds. More specifically, iodonium salts such as diazonium salt and diaryliodonium salt, sulfonium salts such as triarylsulfonium salt, triarylvirylium salt, benzylpyridinium thiocyanate, dialkylphenacil sulfonium salt, dialkylhydroxyphenylphosphonium salt and the like. , Photoacid generator or cationic photopolymerization initiator.
Above all, from the viewpoint of patterning property, it is preferable to use a triarylsulfonium salt.

Examples of the counter anion of the onium salt compound include borate anion, sulfonate anion, gallate anion, phosphorus anion, antimony anion and the like. More specifically, sulfonic acid anion, disulfonylimide acid anion, hexafluorophosphate anion, fluoroantimonate anion, tetrafluoroborate anion, tetrakis (pentafluorophenyl) borate anion and the like can be mentioned.

The photosensitizer may be used alone or in combination of two or more.
The content of the photosensitizer is, for example, 0.3 to 5.0% by mass, preferably 0.5 to 4.5% by mass, and more preferably 1.0, based on the total solid content of the photosensitive resin composition. ~ 4.0% by mass. By setting the content to 0.3% by mass or more, the patterning property can be improved. Further, by setting the content to 5.0% by mass or less, the ionic component in the membrane can be reduced, and the insulating property and reliability of the final membrane can be improved.

[Adhesion aid]
The photosensitive resin composition of the present embodiment preferably contains an adhesion aid. Thereby, for example, the adhesion to the substrate can be further improved.

The adhesion aid is not particularly limited. For example, amino group-containing silane coupling agent, epoxy group-containing silane coupling agent, (meth) acryloyl group-containing silane coupling agent, mercapto group-containing silane coupling agent, vinyl group-containing silane coupling agent, ureido group-containing silane cup. A silane coupling agent such as a ring agent or a sulfide group-containing silane coupling agent can be used.
When a silane coupling agent is used, one type may be used alone, or two or more types may be used in combination.

Examples of the amino group-containing silane coupling agent include bis (2-hydroxyethyl) -3-aminopropyltriethoxysilane, γ-aminopropyltriethoxysilane, γ-aminopropyltrimethoxysilane, and γ-aminopropylmethyldiethoxy. Silane, γ-aminopropylmethyldimethoxysilane, N-β (aminoethyl) γ-aminopropyltrimethoxysilane, N-β (aminoethyl) γ-aminopropyltriethoxysilane, N-β (aminoethyl) γ-amino Examples thereof include propylmethyldimethoxysilane, N-β (aminoethyl) γ-aminopropylmethyldiethoxysilane, and N-phenyl-γ-amino-propyltrimethoxysilane.
Examples of the epoxy group-containing silane coupling agent include γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldiethoxysilane, β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, and γ-glycidyl. Examples thereof include propyltrimethoxysilane.
Examples of the (meth) acryloyl group-containing silane coupling agent include γ-((meth) acryloyloxypropyl) trimethoxysilane, γ-((meth) acryloyloxypropyl) methyldimethoxysilane, and γ-((meth)). Acryloyloxypropyl) methyldiethoxysilane and the like.
Examples of the mercapto group-containing silane coupling agent include 3-mercaptopropyltrimethoxysilane.
Examples of the vinyl group-containing silane coupling agent include vinyltris (β-methoxyethoxy) silane, vinyltriethoxysilane, vinyltrimethoxysilane and the like.
Examples of the ureido group-containing silane coupling agent include 3-ureidopropyltriethoxysilane and the like.
Examples of the sulfide group-containing silane coupling agent include bis (3- (triethoxysilyl) propyl) disulfide and bis (3- (triethoxysilyl) propyl) tetrasulfide.
Examples of the acid anhydride-containing silane coupling agent include 3-trimethoxysilylpropyl succinic acid anhydride, 3-triethoxysilylpropyl succinic acid anhydride, 3-dimethylmethoxysilylpropyl succinic acid anhydride and the like.

Moreover, as the adhesion aid, not only a silane coupling agent but also a titanium coupling agent, a zirconium coupling agent and the like can be mentioned.

When the adhesion aid is used, it may be used alone or in combination of two or more kinds of adhesion aids.
When the adhesion aid is used, the amount used is preferably 0.3 to 5% by mass, more preferably 0.4 to 4% by mass, still more preferably, based on the total amount of the non-volatile components of the photosensitive resin composition. Is 0.5 to 3% by mass.

The method for preparing the photosensitive resin composition of the present embodiment is not particularly limited, and it can be produced by a generally known method.
Further, the photosensitive resin composition of the present embodiment may be in the form of a varnish or a film. Hereinafter, the form of the photosensitive resin composition of the present embodiment will be described.

The varnish-like photosensitive resin composition (resin varnish) can be obtained, for example, by blending each of the above-mentioned components (raw materials) with a solvent described later and uniformly mixing them. As a result, a photosensitive resin film can be easily formed on the stepped substrate by the coating method.

[solvent]
The solvent usually includes an organic solvent. The organic solvent is not particularly limited as long as each of the above-mentioned components can be dissolved or dispersed and does not substantially chemically react with each of the components.

Examples of the organic solvent include acetone, methyl ethyl ketone, toluene, propylene glycol methyl ethyl ether, propylene glycol dimethyl ether, propylene glycol 1-monomethyl ether 2-acetate, diethylene glycol ethyl methyl ether, diethylene glycol monoethyl ether acetate, diethylene glycol monobutyl ether acetate, and benzyl. Examples thereof include alcohol, propylene carbonate, ethylene glycol diacetate, propylene glycol diacetate, propylene glycol monomethyl ether acetate, diproprene glycol methyl-n-propyl ether, butyl acetate and γ-butyrolactone. These may be used alone or in combination of two or more.

The solvent is used so that the concentration of the total amount of the non-volatile components in the photosensitive resin composition is preferably 30 to 75% by mass, more preferably 35 to 70% by mass. Within this range, each component can be sufficiently dissolved or dispersed. In addition, good coatability can be ensured, which in turn leads to further improvement in flatness. Further, by adjusting the content of the non-volatile component, the viscosity of the photosensitive resin composition can be appropriately controlled.

The film-like photosensitive resin composition (photosensitive resin film) is, for example, with respect to a coating film (resin film) obtained by applying the above-mentioned varnish-like photosensitive resin composition on a carrier base material. It can be obtained by performing a solvent removing treatment. The solvent content of the photosensitive resin film can be 10% by weight or less based on the entire photosensitive resin composition. For example, the solvent removal treatment can be performed under the conditions of 80 ° C. to 150 ° C. for 1 minute to 30 minutes. This makes it possible to sufficiently remove the solvent while suppressing the progress of curing of the photosensitive resin composition.

In the step of forming the resin film of the photosensitive resin composition on the carrier base material, for example, the photosensitive resin composition is dissolved and dispersed in a solvent or the like to prepare a resin varnish, and the resin is prepared using various coater devices. Examples thereof include a method in which the varnish is applied to the carrier base material and then dried, and a method in which the resin varnish is spray-coated on the carrier base material using a spray device and then dried. Among these, a method of applying a resin varnish to a carrier base material using various coater devices such as a spin coater, a comma coater, and a die coater, and then drying the resin varnish is preferable. As a result, it is possible to efficiently produce a photosensitive resin film with a carrier base material having no voids and having a uniform thickness.

The photosensitive resin film with a carrier base material may be in the form of a roll that can be wound up, or may be in the form of a rectangular sheet of sheet. The surface of the photosensitive resin film with a carrier base material may be exposed, for example, or may be covered with a protective film (cover film). As the protective film, a film having a known protective function can be used, but for example, a PET film may be used.

Further, in the present embodiment, as the carrier base material, for example, a polymer film or a metal foil can be used. The polymer film is not particularly limited, but for example, heat resistance of polyolefins such as polyethylene and polypropylene, polyesters such as polyethylene terephthalate and polybutylene terephthalate, release papers such as polycarbonate and silicone sheets, fluororesins and polyimide resins. Examples thereof include a thermoplastic resin sheet having the above. The metal foil is not particularly limited, and is, for example, copper and / or copper-based alloy, aluminum and / or aluminum-based alloy, iron and / or iron-based alloy, silver and / or silver-based alloy, gold and gold-based alloy. , Zinc and zinc alloys, nickel and nickel alloys, tin and tin alloys and the like. Among these, a sheet made of polyethylene terephthalate is most preferable because it is inexpensive and the peel strength can be easily adjusted. This makes it easy to peel off the carrier base material from the photosensitive resin film with the carrier base material with an appropriate strength.

The film thickness of the photosensitive resin film can be designed according to the film thickness of the final cured film. The lower limit of the film thickness of the photosensitive resin film is, for example, 40 μm or more, preferably 50 μm or more, and more preferably 60 μm or more. Thereby, a thick photosensitive resin film can be realized. It is possible to improve the embedding property of an electronic member such as a semiconductor chip of a photosensitive resin film. In addition, the mechanical strength of the photosensitive resin film can be improved. On the other hand, the upper limit of the film thickness of the photosensitive resin film is not particularly limited, but may be, for example, 300 μm or less, 250 μm or less, or 200 μm or less. As a result, it is possible to realize a thin layer of the electronic device provided with the cured film of the photosensitive resin film.

[viscosity]
The viscosity of the photosensitive resin composition of the present embodiment at 25 ° C. is preferably 1 to 50,000 mPa · s, more preferably 10 to 10,000 mPa · s, and even more preferably 50 to 5,000 mPa · s. By setting the viscosity within the above numerical range, the thickness of the coating film can be appropriately controlled. In addition, it is easy to improve the flatness of the film.
The viscosity can be measured using, for example, a cone plate type viscometer (TV-25, manufactured by Toki Sangyo). The rotation speed at the time of measurement can be set to 100 rpm as an example, and can be set to 20 rpm when an appropriate viscosity measurement cannot be performed at 100 rpm.
The coating thickness is appropriately adjusted in the range of, for example, 1 to 100 μm, preferably 3 to 80 μm, and more preferably 5 to 50 μm.

[PGMEA contact angle]
On the surface of the resin film made of the photosensitive resin composition of the present embodiment, the PGMEA contact angle measured under the following conditions is preferably 20 degrees or less.
(Measurement conditions for PGMEA contact angle)
The resin film made of the photosensitive resin composition is dried at 120 ° C. for 5 minutes. The resin film is exposed to 500 mJ / cm ² and then heat-treated after exposure at 100 ° C. for 5 minutes. The resin film is spray-developed with PGMEA (propylene glycol monomethyl ether acetate) at 3000 rpm for 20 seconds, and the PGMEA is shaken off from the surface of the resin film under the conditions of 3000 rpm and 15 seconds. Then, at room temperature of 25 ° C., the static contact angle on the surface of the resin film before the curing treatment when measured 5 seconds after dropping PGMEA is defined as the PGMEA contact angle.

According to the study by the present inventors, in addition to the selection of the fluorine-based surfactant, the PGMEA contact angle on the surface of the photosensitive resin film after the development treatment and before the curing treatment (measured using PGMEA at a room temperature of 25 ° C.). By using the static contact angle) as an index, it is possible to stably evaluate the generation of foreign matter on the film surface, and by setting the PGMEA contact angle to a predetermined value or less based on such an index, it is possible to stably evaluate It was found that the generation of foreign matter on the film surface after the development treatment can be suppressed while improving the film forming property.

The detailed mechanism is not clear, but it can be considered as follows.
The fluorine-based surfactant that contributes to the film formation (drying) of the photosensitive resin composition bleeds on the surface of the photosensitive resin film during the heat treatment. Subsequently, the surfactant on the surface is washed away during the development treatment, but when the numerical range of the PGMEA contact angle is satisfied, the liquid repellency of the surface is sufficiently lowered, and the developer residue uniformly covers the film surface. It is considered that the generation of foreign matter on the film surface is suppressed.

In the present embodiment, the upper limit of the PGMEA contact angle is, for example, preferably 20 degrees or less, more preferably 18 degrees or less, and even more preferably 15 degrees or less. As a result, it is possible to suppress the generation of foreign matter on the film surface after the development treatment. On the other hand, the lower limit of the PGMEA contact angle is not particularly limited, but is, for example, 0 degrees or more.

In the present embodiment, the PGMEA contact angle can be controlled by appropriately selecting, for example, the type and blending amount of each component contained in the photosensitive resin composition, the method for preparing the photosensitive resin composition, and the like. Is. Among these, for example, adjusting the type and blending amount of the surfactant, the cross-linking component of the photosensitive resin film, and the like can be mentioned as factors for setting the PGMEA contact angle in a desired numerical range.

<Manufacturing method of semiconductor devices>
Using the photosensitive resin composition of the present embodiment, a semiconductor device (semiconductor device including a film formed of the photosensitive resin composition) can be manufactured.
Hereinafter, an example of a method for manufacturing the semiconductor device of the present embodiment will be described with reference to FIGS. 1 to 3. The manufacturing method according to the present embodiment is a method characterized in that the semiconductor chip 40 is sealed from the surface of the semiconductor chip 40 opposite to the side on which the electrode pad 30 is arranged, so-called fan-out. This is a method for manufacturing a wafer level package type semiconductor device.

First, as shown in FIG. 1A, a plurality of semiconductor chips 40 obtained by individualizing a semiconductor wafer that has been passivated in advance by forming the passivation film 50 are arranged at predetermined intervals. A structure is prepared in which the terminal surface (the surface on the side where the electrode pad 30 is arranged) of the semiconductor chip 40 is arranged and attached to the adhesive surface of the adhesive member 200. As the material for forming the passivation film 50, a photosensitive resin composition used for forming the first insulating resin film 60, which will be described later, can be used.
Further, in the above structure, in the plurality of semiconductor chips 40, the plurality of semiconductor chips 40 are embedded inside the sealing material 10 so that the electrode pads 30 provided on the surfaces thereof all face the same direction. Is preferable.
Further, in the present manufacturing method, a pillar-shaped conductor portion made of a metal such as copper may be formed on the electrode pad 30 provided in the semiconductor chip 40 described above. Further, a solder bump may be formed on the end surface of the conductor portion on the side opposite to the side on which the electrode pad is arranged.

Next, as shown in FIG. 1B, the plurality of semiconductor chips 40 attached to the adhesive member 200 are covered and sealed with a cured product of the semiconductor encapsulating resin composition. In the present embodiment, the cured product of the semiconductor encapsulating resin composition indicates a encapsulant. As such a resin composition for encapsulating a semiconductor, a known material can be used, and examples thereof include an epoxy resin composition containing an epoxy resin, an inorganic filler, and a curing agent.

Further, in the present manufacturing method, examples of the method of sealing the semiconductor chip 40 using the semiconductor encapsulating resin composition include a transfer molding method, a compression molding method, an injection molding method, a lamination method and the like. Above all, the transfer molding method, the compression molding method, or the lamination method is preferable from the viewpoint of forming the sealing material 10 without leaving an unfilled portion. Therefore, the resin composition for semiconductor encapsulation used in the present production method is preferably in the form of granules, powders, tablets or sheets. Further, the compression molding method is particularly preferable from the viewpoint of suppressing the occurrence of misalignment of the semiconductor chip 40 during molding of the sealing material 10.

Next, as shown in FIG. 1 (c), the adhesive member 200 is peeled off. By doing so, it is possible to obtain a structure in which the plurality of semiconductor chips 40 having the electrode pads 30 on the surface are embedded inside the sealing material 10. It is preferable that the adhesive member 200 is peeled off from the structure after reducing the adhesion between the adhesive member 200 and the structure. Specifically, the adhesive portion between the adhesive member 200 and the structure is adhered by, for example, performing ultraviolet irradiation or heat treatment to deteriorate the adhesive layer of the adhesive member 200 forming the adhesive portion. There is a method of reducing the sex. The adhesive member 200 is not particularly limited as long as it adheres to the semiconductor chip 40, and examples thereof include a member in which a back grind tape and an adhesive layer are laminated.
Here, the structure shown in FIG. 1C relates to a mode in which the surface of the semiconductor chip 40 opposite to the side on which the electrode pad 30 is arranged is covered with the sealing material 10. However, in the present manufacturing method, the sealing material 10 is known so that the surface of the semiconductor chip 40 opposite to the side on which the electrode pad 30 is arranged is exposed before the adhesive member 200 is peeled off. It may have a step of polishing and removing with.

Next, as shown in FIG. 2A, a first insulating resin film 60 is formed on the surface of the obtained structure on the side where the electrode pad 30 is embedded. Specifically, the first insulating resin film 60 is formed by applying a varnish-like resin composition to the surface of the above-mentioned structure on the side where the electrode pad 30 is embedded and drying it. do. The film thickness of the first insulating resin film 60 can be, for example, 1 μm or more and 300 μm or less. Further, as a method for applying the resin composition, known methods such as a spin coating method, a slit coating method and an inkjet method can be adopted, and among them, the spin coating method is preferably adopted.

Then, in the present production method, as described above, the above-mentioned epoxy resin, phenoxy resin, and fluorine-based surfactant are included as the resin material constituting the first insulating resin film 60, and the fluorine-based interface is contained. A photosensitive resin composition in which the activator is a compound having a structural unit represented by (a) -N (R) -SO _2- Rf (where R represents an organic group and Rf is a perfluoroalkyl group). It is important to use. By doing so, the first insulating resin film 60 having excellent shape reliability can be formed on the sealing material 10 with good yield. The details of the photosensitive resin composition used in this production method will be described later.

In the present production method, it is preferable to perform plasma treatment on the surface of the sealing material 10 on the side where the first insulating resin film 60 is formed before forming the first insulating resin film 60. .. By doing so, the wettability of the first insulating resin film 60 can be improved, and as a result, the adhesion between the sealing material 10 and the first insulating resin film 60 is further improved. Can be. For such plasma treatment, for example, argon gas, oxidizing gas, or fluorine-based gas can be used as the treatment gas. As the oxidizing gas, O2 gas, _{O 3} gas, CO gas, CO ₂ gas, NO gas, such as NO ₂ gas. As the treatment gas, for example, it is preferable to use an oxidizing gas. Further, as the oxidizing gas, for example, it is preferable to use _{O 2 gas.} As a result, a specific functional group can be formed on the surface of the sealing material 10. Therefore, the adhesion and coatability of the first insulating resin film 60 to the sealing material 10 can be further improved, and the reliability of the semiconductor device can be further improved.

The conditions of the plasma treatment in this production method are not particularly limited, but in addition to the ashing treatment, the treatment may be a treatment in which the plasma is brought into contact with the plasma derived from the inert gas. Further, the plasma treatment according to the present production method is preferably a plasma treatment performed without applying a bias voltage to the processing target, or a plasma treatment performed using a non-reactive gas.
Further, in the present production method, the chemical treatment may be carried out instead of the plasma treatment described above, or both the plasma treatment and the chemical treatment may be carried out. Examples of the chemicals that can be used for such chemical treatment include alkaline permanganate aqueous solutions such as potassium permanganate and sodium permanganate.

Next, as shown in FIG. 2B, a first opening 250 that exposes a part of the electrode pad 30 is formed in the first insulating resin film 60. Here, as a method for forming the first opening 250, an exposure developing method or a laser processing method can be used. Further, it is preferable to perform a death come treatment on the formed first opening 250 to remove scum (resin residue) generated when the first opening 250 is formed.

The death come true may be plasma irradiation. At this time, as the processing gas, for example, argon gas, O ₂ gas, O ₃ gas, CO gas, CO ₂ gas, NO gas, NO ₂ gas, or a fluorine-based gas can be used.

Next, as shown in FIG. 2C, the conductive film 110 is formed so as to cover the exposed electrode pad 30 and the first insulating resin film 60. The conductive film 110 is, for example, an electrolytic copper plating film, a solder plating film, a tin plating film, a two-layered plating film in which a gold plating film is laminated on a nickel plating film, and an under bump formed by electroless plating. It can be a metal (UBM) film. Further, the film thickness of the conductive film 110 can be, for example, 2 μm or more and 10 μm or less. Then, the surface of the obtained conductive film 110 may be subjected to plasma treatment in the same manner as described above from the viewpoint of improving the durability of the finally obtained semiconductor device 100.

As the plating treatment method described above, for example, an electrolytic plating method or an electroless plating method can be adopted. When the electroless plating method is used, the conductive film 110 can be formed as follows. Here, an example of forming a conductive film 110 composed of two layers of nickel and gold will be described, but the present invention is not limited to this.
First, a nickel plating film is formed. When performing electroless nickel plating, the structure shown in FIG. 2B is immersed in the plating solution. By doing so, the conductive film 110 can be formed on the surfaces of the electrode pad 30 and the first insulating resin film 60. As the plating solution, those containing nickel lead and, for example, hypophosphate as a reducing agent can be used. Subsequently, electroless gold plating is performed on the nickel plating film. The method of electroless gold plating is not particularly limited, but for example, it can be performed by replacement gold plating performed by replacing gold ions with ions of the base metal.

As described above, in the FO-WLP, the semiconductor chip 40 is embedded by the sealing material 10. The circuit surface of the semiconductor chip 40 is exposed to the outside, and a boundary between the semiconductor chip 40 and the sealing material 10 is formed. A conductive film 110 (rewiring layer) connected to the electrode pad 30 of the semiconductor chip 40 is also provided in the region of the sealing material 10 in which the semiconductor chip 40 is embedded, and bumps are provided via the conductive film 110 (rewiring layer). It is electrically connected to the electrode pad 30 of the semiconductor chip 40. The pitch of the bumps can be set larger than the pitch of the electrode pads 30 of the semiconductor chip 40.

Next, as shown in FIG. 3A, a second insulating resin film 70 is formed on the surface of the conductive film 110. Then, in the present embodiment, as shown in FIG. 3B, a second opening 300 that exposes a part of the conductive film 110 is formed.
As the method for forming the second insulating resin film 70 and the second opening 300, the same method as the method for forming the first insulating resin film 60 and the first opening 250 can be used. can. Further, as the material for forming the second insulating resin film 70, the photosensitive resin composition used for forming the first insulating resin film 60 can be used.

Next, as shown in FIG. 3C, the solder bump 80 or the end of the bonding wire is melted and fused onto the conductive film 110 exposed in the second opening 300. By doing so, the semiconductor device 100 according to the present embodiment can be obtained.
After that, although not shown, the semiconductor device 100 can be separated into a plurality of semiconductor packages by cutting along the dicing line formed in the semiconductor device 100 so as to include at least one semiconductor chip 40. can.

Further, in the present manufacturing method, starting from the structure shown in FIG. 3B, a semiconductor having a multilayer wiring structure in which a plurality of conductive films (wiring layers) and an insulating resin film are laminated in this order. The device can also be made. According to this manufacturing method, for example, a semiconductor device including four layers of conductive film (wiring layer) and five layers of insulating resin film can be manufactured. In this case, as the method for forming the conductive film (wiring layer), the same method as the method for forming the conductive film 110 can be used. Further, as the method for forming the insulating resin film, the same method as the method for forming the first insulating resin film 60 can be used.
Also in the case of manufacturing the semiconductor device having the above-mentioned multi-layer wiring structure, the solder bump 80 or the end portion of the bonding wire is melted in the outermost layer and melted into the conductive film (wiring layer) by the same method as the above-mentioned method. By wearing it, the obtained semiconductor device can be electrically connected.

Further, the above-mentioned manufacturing method relates to a method of forming an insulating resin film and a conductive film (wiring layer) only on one surface of the structure starting from the structure shown in FIG. 1 (c). However, when the structure shown in FIG. 1C is in a state where the surface of the semiconductor chip 40 opposite to the side on which the electrode pad 30 is arranged is also exposed, it is insulated from both sides of the structure. A sex resin film may be formed.

The manufacturing method can also be applied to a process for manufacturing a chip-sized semiconductor package, but from the viewpoint of improving the productivity of the semiconductor package, the process for manufacturing the wafer level package described in the background technology section. Or, it is preferably applied to the process of producing a panel level package assuming the use of a large area panel larger than the wafer size.

Although the embodiments of the present invention have been described above, these are examples of the present invention, and various configurations other than the above can be adopted. Further, the present invention is not limited to the above-described embodiment, and modifications, improvements, and the like within the range in which the object of the present invention can be achieved are included in the present invention.

Embodiments of the present invention will be described in detail based on Examples and Comparative Examples. The present invention is not limited to the examples.

<Preparation of photosensitive resin composition>
-Examples 1 to 3
Each component listed in Table 1 was dissolved in propylene glycol monomethyl ether acetate (PGMEA) to prepare a solution. The solution was then filtered through a 0.2 μm polypropylene filter. As a result, a photosensitive resin composition having a viscosity at 25 ° C. of about 100 mPa · s was obtained (35% by mass in terms of solid content).
The viscosity of the photosensitive resin composition was measured using a cone plate type viscometer (TV-25, manufactured by Toki Sangyo Co., Ltd.) at a rotation speed of 100 rpm.

・ Comparative example 1
A photosensitive resin composition was obtained in the same manner as in Example 1 except that the surfactant 2 was used instead of the surfactant 1 of Example 1.

・ Comparative example 2
A photosensitive resin composition was obtained in the same manner as in Example 1 except that the epoxy resin 1 was used as a substitute for the phenoxy resin 1 and the surfactant 2 was used instead of the surfactant 1.

The details of the raw materials of each component in Table 1 are as follows.
(Epoxy resin)
Epoxy resin 1: Phenol novolac type epoxy resin (manufactured by Nippon Kayaku Co., Ltd., EPPN-201, epoxy equivalent 220, softening point 67 ° C)
Epoxy resin 2: Naphthalene skeleton-containing epoxy resin (manufactured by DIC Corporation, HP-6000)
(Phenoxy resin)
Phenoxy resin 1: Bisphenol A type phenoxy resin (Mitsubishi Chemical Corporation "jER1256", Mw: about 50,000))
Phenoxy resin 2: Bisphenol A type phenoxy resin (manufactured by PKHA Gabriel Phoenixies, Mw: about 25,000))
(Fluorine-based surfactant)
Surfactant 1: Fluorosurfactant containing perfluoroalkyl group and polyoxyalkylene group ("FC4432" manufactured by DIC Corporation)
Surfactant 2: Fluorine-containing group / lipophilic group-containing surfactant (“R-41” manufactured by DIC Corporation)
(Photosensitive agent)
Photosensitizer 1: Triarylsulfonium borate salt (manufactured by San-Apro, CPI-310B)
(Adhesion aid)
Adhesion aid: 3-glycidoxypropyltrimethoxysilane (silane coupling agent manufactured by Shin-Etsu Chemical Co., Ltd., KBM-403)

The obtained photosensitive resin composition was evaluated as follows. The evaluation results are shown in Table 1.

[Measurement of PGMEA contact angle]
(1) The obtained photosensitive resin composition was applied onto a substrate by spin coating so as to have a film thickness of 5 μm, and dried at 120 ° C. for 5 minutes to form a photosensitive resin film.
(2) The photosensitive resin film obtained in (1) above was exposed to the entire surface at ^{500 mJ / cm 2 using an automatic exposure machine.}
(3) After the above (2), the substrate was heated on a hot plate at 100 ° C. for 5 minutes after exposure.
(4) After the above (3), the photosensitive resin film is spray-developed with PGMEA (propylene glycol monomethyl ether acetate) under the conditions of 3000 rpm for 30 seconds, and the photosensitive resin film is exposed to PGMEA under the conditions of 3000 rpm and 15 seconds. A treatment was performed to shake off from the surface of the sex resin film.
(5) After the above (4), 0.2 μl of PGMEA was placed on the surface of the obtained photosensitive resin film before the curing treatment, and a static contact angle meter (manufactured by Kyowa Interface Science Co., Ltd., product name: Using PCA-1), the static contact angle (contact angle) 5 seconds after the dropping was measured at room temperature of 25 ° C.

[Presence or absence of foreign matter on the surface of the developing film]
The surface condition of the obtained film was observed using an optical microscope and evaluated according to the following criteria.
⊚: 1 cm The ^{number of foreign substances per 2} is less than 1 〇: 1 cm The ^{number of foreign substances per 2} is 1 or more and less than 5 ×: 1 cm The number of foreign substances per ^{2 is 5 or more}

[Film filmability (coatability)]
The photosensitive resin composition was dropped onto a 12-inch silicon wafer, formed by spin coating at 1500 rpm / 30 seconds, heated and dried at 120 ° C. for 5 minutes, and then the film thickness (μm) was increased at 1 cm intervals in the substantially radial direction of the film. It was measured. From the obtained multiple film thicknesses, the difference between the maximum film thickness and the minimum film thickness (maximum film thickness height difference) and the average film thickness were calculated, and "in-plane film thickness uniformity (%)) was calculated using the following formula. , And evaluated according to the following criteria. The lower the in-plane uniformity of the film thickness, the better.
In-plane uniformity of film thickness [%] = [Maximum film thickness height difference (μm)] / [Average film thickness (μm)] × 100

10 Encapsulant 30 Electrode pad 40 Semiconductor chip 50 Passivation film 60 Insulating resin film 70 Insulating resin film 80 Handa bump 100 Semiconductor device 110 Conductive material 200 Adhesive member 250 Opening 300 Opening

Claims (14)

A photosensitive resin composition containing an epoxy resin, a phenoxy resin, and a fluorine-based surfactant.
The fluorine-based surfactant is a compound having a structural unit represented by _{(a) -N (R) -SO} 2 -Rf ( wherein R represents an organic group, Rf is a perfluoroalkyl group), a photosensitive Resin composition. The photosensitive resin composition according to claim 1, wherein the fluorine-based surfactant is (b) a copolymer having a structural unit containing a polyoxyalkylene group. The photosensitive resin composition according to claim 1 or 2, wherein the phenoxy resin has a weight average molecular weight of 10,000 to 100,000. The photosensitive resin composition according to any one of claims 1 to 3, wherein the phenoxy resin is 20 to 60 parts by mass with respect to 100 parts by mass of the epoxy resin. The photosensitive resin composition according to any one of claims 1 to 4, wherein the epoxy resin contains a polyfunctional epoxy resin having three or more epoxy groups in the molecule. The photosensitive resin composition according to any one of claims 1 to 5, further comprising a photosensitive agent. The photosensitive resin composition according to any one of claims 1 to 6, further comprising an adhesion aid. The photosensitive resin composition according to any one of claims 1 to 7, wherein the fluorosurfactant is 0.01 part by mass to 1 part by mass with respect to 100 parts by mass of the epoxy resin. The photosensitive resin composition according to any one of claims 1 to 8, wherein the PGMEA contact angle measured under the following conditions is 20 degrees or less on the surface of the resin film made of the photosensitive resin composition.
(Measurement conditions for PGMEA contact angle)
The resin film made of the photosensitive resin composition is dried at 120 ° C. for 5 minutes. The resin film is exposed to 500 mJ / cm ² and then heat-treated after exposure at 100 ° C. for 5 minutes. The resin film is spray-developed with PGMEA (propylene glycol monomethyl ether acetate) at 3000 rpm for 20 seconds, and the PGMEA is shaken off from the surface of the resin film under the conditions of 3000 rpm and 15 seconds. Then, at room temperature of 25 ° C., the static contact angle on the surface of the resin film before the curing treatment when measured 5 seconds after dropping PGMEA is defined as the PGMEA contact angle. The photosensitive resin composition according to any one of claims 1 to 9, which is used for forming an insulating film of a rewiring layer in a fan-out wafer level package. A semiconductor device including a resin film formed of the photosensitive resin composition according to any one of claims 1 to 10. The process of preparing a structure in which a plurality of semiconductor chips having connection terminals on the surface are embedded inside the encapsulant, and
A step of forming a first insulating resin film in an on-plane region of the structure on the side where connection terminals provided on the semiconductor chip are arranged.
A step of forming a first opening in the first insulating resin film and the structure to expose a part of the connection terminal.
A step of forming a conductive film so as to cover the exposed connection terminal and at least a part of the first insulating resin film.
A step of forming a second insulating resin film on the surface of the conductive film and
A step of forming a second opening in which a part of the conductive film is exposed in the second insulating resin film, and a step of forming the second opening.
Including
A method for manufacturing a semiconductor device, wherein the resin material constituting the first insulating resin film is the photosensitive resin composition according to any one of claims 1 to 10. The method for manufacturing a semiconductor device according to claim 12, wherein the sealing material is a cured product of an epoxy resin composition containing an epoxy resin, an inorganic filler, and a curing agent. The method for manufacturing a semiconductor device according to claim 12 or 13, further comprising a step of subjecting the surface of the encapsulant to a plasma treatment before the step of forming the first insulating resin film.

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