JP2021158160A - Light emitting device, optical device, measurement device, and information processing unit - Google Patents

Abstract

To provide a light emitting device and the like, capable of performing an operation to make a plurality of light emitting elements emit light in sequence and also capable of performing an operation to make part or all of a plurality of light emitting elements emit light in parallel.SOLUTION: A light emitting device includes: a light source including a plurality of light emitting elements and a plurality of driving elements which are provided corresponding to a plurality of the light emitting elements and which drive so that the light emitting elements light up when the driving elements are brought into an ON state; and a control section controlling to perform switching between a sequential lighting operation to light up a plurality of the light emitting elements in sequence and a simultaneous lighting operation to light up a plurality of the light emitting elements in parallel at the same time.SELECTED DRAWING: Figure 5

Description

The present invention relates to a light emitting device, an optical device, a measuring device, and an information processing device.

In Patent Document 1, a large number of light emitting elements whose threshold voltage or threshold current can be controlled by light from the outside are arranged one-dimensionally, two-dimensionally, or three-dimensionally, and at least the light generated from each light emitting element is arranged. A light emitting element array is described in which a part of the light emitting element is configured to be incident on another light emitting element in the vicinity of each light emitting element, and a clock line for applying a voltage or a current from the outside is connected to each light emitting element.

In Patent Document 2, a light emitting device having a pnpnpn6 layer semiconductor structure is configured, and electrodes are provided on both ends of the p-type first layer and n-type sixth layer, and the central p-type third layer and n-type fourth layer. A self-scanning light emitting device in which a pn layer has a light emitting diode function and a pnpn 4 layer has a thyristor function is described.

Patent Document 3 describes a substrate, a surface-emitting semiconductor laser arranged in an array on the substrate, and a thyristor as a switch element arranged on the substrate to selectively turn on / off the light emission of the surface-emitting semiconductor laser. A self-scanning light source head with and is described.

Japanese Unexamined Patent Publication No. 01-238962 Japanese Unexamined Patent Publication No. 2001-308385 JP-A-2009-286048

When measuring the three-dimensional shape of an object to be measured based on the so-called ToF (Time of Flight) method based on the flight time of light, a plurality of light emitting elements are provided as a light source for irradiating the object to be measured with light, and a plurality of light emitting elements are provided. There is a light emitting device that causes the light emitting elements to emit light in sequence. In such a light emitting device, it may be required to make all or a part of a plurality of light emitting elements emit light in parallel at the same time.
The present invention provides a light emitting device capable of sequentially emitting light from a plurality of light emitting elements and at the same time causing a part or all of the plurality of light emitting elements to emit light in parallel.

The invention according to claim 1 comprises a plurality of light emitting elements and a plurality of driving elements provided corresponding to the plurality of the light emitting elements and driven so that the light emitting elements are turned on when the light emitting elements are turned on. The light source includes a light source, a control unit that switches and controls a sequential lighting operation that sequentially lights a plurality of the light emitting elements and a simultaneous lighting operation that simultaneously lights a plurality of the light emitting elements in parallel. , A power supply line set to a reference potential or a power supply potential, a drive signal line connected to the power supply line and supplying a drive signal to the drive element, and a lighting signal for lighting to a plurality of the light source elements. The control unit has a lighting signal line, and in the sequential lighting operation, the power supply line is set to a power potential, and the driving element is turned on by the driving signal and the lighting signal. The light emitting elements corresponding to the driving elements are sequentially turned on, and in the simultaneous lighting operation, the power supply line is set to the reference potential, and the plurality of the driving elements are turned on by the driving signal and the lighting signal. It is a light emitting device characterized by lighting a plurality of the light emitting elements in parallel at the same time.
According to the second aspect of the present invention, the driving element is a driving thyristor, and the driving signal is a signal supplied to the gate of the driving thyristor to enable the driving thyristor to shift to the on state. The light emitting device according to claim 1, wherein the light emitting device is characterized.
According to the third aspect of the present invention, the light emitting element and the driving element are light emitting thyristors in which the light emitting element and the driving element are integrated, and the driving signal is supplied to the gate of the light emitting thyristor. The light emitting device according to claim 1, wherein the light emitting thyristor is a signal capable of shifting to an on state.
According to the fourth aspect of the present invention, the plurality of the light emitting elements included in the light source are arranged in a two-dimensional manner, the number of the driving elements provided corresponding to the light emitting elements is two, and the control unit is a control unit. The light emitting device according to claim 1, wherein the two driving elements are turned on in the simultaneous lighting operation.
The invention according to claim 5 is provided in parallel with a plurality of light emitting elements and a plurality of driving elements provided corresponding to the plurality of the light emitting elements and lighting the light emitting element when the light emitting element is turned on. A light source having a simultaneous lighting diode connected to a drive element corresponding to the light emitting element to be caused, a sequential lighting operation for sequentially lighting a plurality of the light emitting elements, and a simultaneous lighting operation for simultaneously lighting the light emitting elements in parallel. The light source includes a power supply line set to a reference potential or a power supply potential, and one is connected to the power supply line to supply a drive signal to the drive element and the other. Has a drive signal line connected to the simultaneous lighting diode and a lighting signal line for supplying a lighting signal for lighting to the plurality of light emitting elements, and the control unit has the control unit in the sequential lighting operation. The power supply line is set to the power supply potential, the corresponding light emitting elements are sequentially lit by the drive signal and the lighting signal, and in the simultaneous lighting operation, the power supply line is set to the reference potential and the simultaneous lighting is performed. The light emitting device is characterized in that the driving element is turned on via a diode and the light emitting element is simultaneously lit in parallel by the lighting signal.
The invention according to claim 6 is characterized in that the simultaneous lighting diodes are connected so as to have a reverse bias in the sequential lighting operation and a forward bias in the simultaneous lighting operation. The light emitting device according to the above.
The invention according to claim 7 is the light emitting device according to any one of claims 1 to 6, further comprising a diffusing member that diffuses and emits light emitted from the light source.
The invention according to claim 8 is the light emitting device according to any one of claims 1 to 6, further comprising a diffracting member that diffracts and emits light emitted from the light source.
The invention according to claim 9 is a light receiving device according to any one of claims 1 to 8 and a light receiving unit that receives reflected light emitted from a light source included in the light emitting device and reflected by an object to be measured. It is an optical device including.
The invention according to claim 10 determines the distance to the object to be measured based on the optical device according to claim 9 and the time from when the optical device is emitted from the light source to when the light is received by the light receiving unit. It is a measuring device including a distance specifying unit to be specified.
The invention according to claim 11 includes the measuring device according to claim 10 and an authentication processing unit that performs authentication processing related to the use of the own device based on the specific result of the distance specifying unit included in the measuring device. It is an information processing device.

According to the first aspect of the present invention, it is possible to perform an operation of sequentially emitting light from a plurality of light emitting elements and an operation of causing all of the plurality of light emitting elements to emit light in parallel.
According to the second aspect of the present invention, control becomes easier as compared with the case where the driving element is not a driving thyristor.
According to the third aspect of the invention, the number of elements can be reduced as compared with the case where the thyristor is not a light emitting thyristor.
According to the fourth aspect of the present invention, the light sources are arranged at a higher density than when they are arranged one-dimensionally.
According to the fifth aspect of the present invention, it is possible to perform an operation of sequentially emitting light from a plurality of light emitting elements and an operation of causing a part of the plurality of light emitting elements to emit light in parallel.
According to the invention of claim 6, control becomes easier as compared with the case where the simultaneous lighting diode is not used.
According to the invention of claim 7, a wider irradiation area can be obtained as compared with the case where the diffusion member is not provided.
According to the eighth aspect, a wider irradiation region can be obtained as compared with the case where the diffraction member is not provided.
According to the invention of claim 9, an optical device capable of acquiring a signal corresponding to a distance is provided.
According to the invention of claim 10, a measuring device capable of measuring the distance to the object to be measured is provided.
According to the invention of claim 11, an information processing apparatus equipped with an authentication process based on a specified distance is provided.

It is a figure which shows an example of an information processing apparatus. It is a block diagram explaining the structure of an information processing apparatus. It is sectional drawing of the light emitting device in line III-III of FIG. It is a figure explaining an example of a light diffusing member. (A) is a plan view, and (b) is a cross-sectional view taken along the line VIB-VIB of (a). It is an equivalent circuit of the light source to which the first embodiment is applied. It is a timing chart for demonstrating the operation which sequentially makes the light emitting diode of the light source to which 1st Embodiment is applied to emit light. It is an equivalent circuit of the light source to which the second embodiment is applied. It is a timing chart explaining the operation of sequentially lighting the light emitting thyristor of the light source to which the second embodiment is applied. It is an equivalent circuit of the light source to which the third embodiment is applied. It is a figure which shows the example which controls the lighting / non-lighting of a laser diode in the light source which includes the 4 × 4 laser diode to which the 3rd Embodiment is applied. It is a timing chart for demonstrating the operation of sequentially lighting a 4x4 laser diode included in a light source to which a third embodiment is applied. It is an equivalent circuit of the light source to which the fourth embodiment is applied. It is a figure which shows an example which sets the lighting / non-lighting of a laser diode in the light source which includes the 4 × 4 laser diode to which the 4th Embodiment is applied. It is a timing chart for demonstrating the operation of sequentially lighting a 4x4 laser diode included in a light source to which a fourth embodiment is applied.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
As a measuring device for measuring the three-dimensional shape of the object to be measured, there is a device for measuring the three-dimensional shape based on the so-called ToF (Time of Flight) method based on the flight time of light. In the ToF method, the irradiated light is reflected by the object to be measured from the timing when the light is emitted from the light emitting device provided in the measuring device, and the three-dimensional sensor (hereinafter, referred to as a 3D sensor) provided in the measuring device is used. The time until the timing of receiving light is measured, and the three-dimensional shape of the object to be measured is specified from the measured three-dimensional shape. The object for which the three-dimensional shape is to be measured is referred to as an object to be measured. A three-dimensional shape may be referred to as a three-dimensional image. Further, measuring a three-dimensional shape may be referred to as three-dimensional measurement, 3D measurement, or 3D sensing.

Such a measuring device is mounted on a portable information processing device or the like, and is used for face recognition of a user who intends to access the device. Conventionally, in portable information processing devices and the like, a method of authenticating a user by a password, a fingerprint, an iris, or the like has been used. In recent years, there has been a demand for an authentication method with higher security. Therefore, a measuring device for measuring a three-dimensional shape has come to be mounted on a portable information processing device. In other words, it acquires the three-dimensional shape of the face of the accessing user, identifies whether or not access is permitted, and only when it is authenticated that the user is permitted to access, the own device (mobile phone). The use of a type information processing device) is permitted.

Here, the information processing device will be described as an example of a portable information processing terminal, and will be described as authenticating a user by recognizing the shape of a face captured as a three-dimensional shape. The information processing device can be applied to an information processing device such as a personal computer (PC) other than a portable information processing terminal.

The configuration, function, method, and the like described in the present embodiment can also be applied to recognizing the object to be measured from the measured three-dimensional shape, with the object other than the face as the object to be measured. Further, such a measuring device is also applied to the case of continuously measuring the three-dimensional shape of the object to be measured, such as augmented reality (AR). In addition, the distance to the object to be measured does not matter. In face recognition, it is sufficient to irradiate a face located at a short distance from the light source with light, but in augmented reality or the like, it is required to irradiate an object to be measured located at a long distance with respect to the face. Therefore, the light source is required to have a large amount of light.

The configurations, functions, methods and the like described in the present embodiment described below can be applied to face recognition and measurement of the three-dimensional shape of the object to be measured other than augmented reality.

[First Embodiment]
(Information processing device 1)
FIG. 1 is a diagram showing an example of the information processing device 1. As described above, the information processing device 1 is, for example, a portable information processing terminal.
The information processing device 1 includes a user interface unit (hereinafter, referred to as a UI unit) 2 and an optical device 3 for measuring a three-dimensional shape. The UI unit 2 is configured by integrating, for example, a display device that displays information to the user and an input device that inputs instructions for information processing by the user's operation. The display device is, for example, a liquid crystal display or an organic EL display, and the input device is, for example, a touch panel.

The optical device 3 includes a light emitting device 4 and a 3D sensor 5. The light emitting device 4 irradiates light toward the object to be measured, in this example, the face. The 3D sensor 5 acquires the light emitted from the light emitting device 4, reflected by the face, and returned. Here, the three-dimensional shape is measured based on the so-called ToF method based on the flight time of light. Then, the three-dimensional shape of the face is specified from the three-dimensional shape. Then, it identifies whether or not access is permitted from the three-dimensional shape of the specified face, and when it is authenticated that the user is permitted to access, the use of the information processing device 1 is permitted. As described above, the three-dimensional shape may be measured by using a object other than the face as the object to be measured. The 3D sensor 5 is an example of a light receiving unit.

The information processing device 1 is configured as a computer including a CPU, a ROM, a RAM, and the like. The ROM includes a non-volatile rewritable memory, for example, a flash memory. Then, the programs and constants stored in the ROM are expanded in the RAM, and when the CPU executes the program, the information processing device 1 operates and various types of information processing are executed.

FIG. 2 is a block diagram illustrating the configuration of the information processing device 1.
The information processing device 1 includes the above-mentioned optical device 3, a measurement control unit 8, and a system control unit 9. As described above, the optical device 3 includes a light emitting device 4 and a 3D sensor 5. The measurement control unit 8 controls the optical device 3. The measurement control unit 8 includes a three-dimensional shape specifying unit 81. The system control unit 9 controls the entire information processing device 1 as a system. The system control unit 9 includes an authentication processing unit 91. A UI unit 2, a speaker 92, a two-dimensional camera (referred to as a 2D camera in FIG. 2) 93, and the like are connected to the system control unit 9.

The light emitting device 4 included in the optical device 3 includes a circuit board 10, a light source 20, a light diffusing member 30, a control unit 110, and a holding unit 40. The light source 20, the control unit 110, and the holding unit 40 are provided on the surface of the circuit board 10. The light diffusing member 30 is provided on the holding portion 40. The control unit 110 is connected to the light source 20 and controls the light source 20. Although the 3D sensor 5 is not provided on the surface of the circuit board 10 in FIG. 2, it may be provided on the surface of the circuit board 10. Further, the control unit 110 does not have to be provided on the surface of the circuit board 10. Here, the surface refers to the front side of the paper surface of FIG. More specifically, in the circuit board 10, the side on which the light source 20 is provided is referred to as a surface, a front side, or a front side. The same applies to other members. In the following, a drawing in which the member is viewed from the surface side is referred to as a plan view.

The control unit 110 is composed of an electronic circuit. For example, the control unit 110 is configured as an integrated circuit (IC).

The 3D sensor 5 includes a plurality of light receiving cells, and outputs a signal corresponding to the time from the timing when the light is emitted from the light source 20 to the timing when the light is received by the 3D sensor 5. For example, each light receiving cell of the 3D sensor 5 receives the pulsed reflected light from the object to be measured (hereinafter, referred to as a light receiving pulse) with respect to the light emitting pulse from the light source 20, and the time until the light receiving is received. The corresponding charge is accumulated for each light receiving cell. The 3D sensor 5 is configured as a device having a CMOS structure in which each light receiving cell has two gates and a charge storage unit corresponding to them. Then, by alternately applying pulses to the two gates, the generated photoelectrons are transferred to either of the two charge storage units at high speed. Charges corresponding to the phase difference between the emitted light pulse and the received light pulse are accumulated in the two charge storage units. Then, the 3D sensor 5 outputs a digital value corresponding to the phase difference between the emitted light pulse and the received light pulse as a signal for each light receiving cell via the AD converter. That is, the 3D sensor 5 outputs a signal corresponding to the time from the timing when the light is emitted from the light source 20 to the timing when the light is received by the 3D sensor 5. That is, a signal corresponding to the three-dimensional shape of the object to be measured is acquired from the 3D sensor 5. Therefore, it is required that the rising time of the emitted light pulse is short and the rising time of the received light pulse is short. That is, it is required that the rise time of the current pulse supplied to drive the light source 20 is short. The AD converter may be provided in the 3D sensor 5 or may be provided outside the 3D sensor 5. The 3D sensor 5 is an example of a light receiving unit.

When the 3D sensor 5 is, for example, the device having the CMOS structure described above, the three-dimensional shape specifying unit 81 of the measurement control unit 8 acquires the digital value obtained for each light receiving cell, and the distance to the object to be measured for each light receiving cell. Is calculated. Then, the three-dimensional shape of the object to be measured is specified by the calculated distance, and the specified result is output. Here, the three-dimensional shape specifying unit 81 has a function as a distance specifying unit that specifies the distance to the object to be measured.

The authentication processing unit 91 included in the system control unit 9 identifies whether or not access is permitted from the three-dimensional shape specified by the three-dimensional shape identification unit 81, and authenticates the user who is permitted to access. do.
In FIG. 2, the measuring device 6 includes an optical device 3 and a measuring control unit 8. Although the optical device 3 and the measurement control unit 8 are shown separately in FIG. 2, they may be integrally configured.

FIG. 3 is a cross-sectional view of the light emitting device 4 taken along the line III-III of FIG.
As shown in FIG. 3, the light diffusing member 30 is provided so as to cover the light source 20. The light diffusing member 30 is provided at a predetermined distance from the light source 20 provided on the circuit board 10 by the holding portion 40 provided on the surface of the circuit board 10. That is, the light diffusing member 30 is provided on the light emission path of the light source 20.

FIG. 4 is a diagram illustrating an example of the light diffusing member 30. 4 (a) is a plan view, and FIG. 4 (b) is a cross-sectional view taken along the line VIB-VIB of FIG. 4 (a). In FIG. 4A, the right direction of the paper surface is the x direction, the upper direction of the paper surface is the y direction, and the front direction of the paper surface is the z direction. In the light diffusing member 30, the + z direction side is referred to as the front surface or the front surface side, and the −z direction side is referred to as the back surface or the back surface side. Therefore, in FIG. 4B, the right direction of the paper surface is the x direction, the back direction of the paper surface is the y direction, and the upper direction of the paper surface is the z direction.

As shown in FIG. 4B, the light diffusing member 30 is, for example, a resin layer in which irregularities for diffusing light are formed on the back surface (−z direction) side of a flat glass substrate 31 whose both sides are parallel. 32 is provided. The light diffusing member 30 emits light incident from the light source 20 with a widening angle. That is, the unevenness formed on the resin layer 32 of the light diffusing member 30 refracts or scatters the light, and emits the incident light as light having a wider spreading angle. That is, as shown in FIG. 4B, the light diffusing member 30 transmits the light having the spreading angle θ emitted from the light source 20 incident from the back surface (−z direction side) to the spreading angle φ larger than the spreading angle θ. Is emitted from the surface (+ z direction side) as light of (θ <φ). Therefore, when the light diffusing member 30 is used, the area of the irradiation surface irradiated by the light emitted by the light source 20 is expanded as compared with the case where the light diffusing member 30 is not used. The spread angles θ and φ are full width at half maximum (FWHM).

Here, the planar shape of the light diffusing member 30 is rectangular. The thickness (thickness in the z direction) t _d of the light diffusing member 30 is 0.1 mm to 1 mm. The planar shape of the light diffusing member 30 may be another shape such as a polygon or a circle.

As described above, in the light diffusing member 30, the light emitted by the light source 20 is incident, and the incident light is diffused and emitted. Therefore, the light emitted by the light source 20 is diffused by the light diffusing member 30 and irradiates the object to be measured. That is, the light emitted by the light source 20 is diffused by the light diffusing member 30 and irradiated in a wider range than in the case where the light diffusing member 30 is not provided.

(Light source 20)
FIG. 5 is an equivalent circuit of the light source 20 to which the first embodiment is applied. Note that FIG. 5 also shows the control unit 110.
The light source 20 is referred to as a light emitting diode LED1, LED2, LED3, ... (If not distinguished, it is referred to as a light emitting diode LED) and a drive thyristor B1, B2, B3, ... .) And. The light emitting diode LED having the same number and the drive thyristor B are connected in series. The light emitting diode LED is an example of a light emitting element. The drive thyristor B is an example of a drive element. Instead of the light emitting diode LED, a laser element such as a vertical cavity surface emitting laser element (VCSEL) may be used.

Further, the light source 20 includes a light emitting diode LED, transfer thyristors T1, T2, T3, ... (When not distinguished, it is referred to as transfer thyristor T) arranged in a row like the light emitting diode LED and the drive thyristor B. Although the transfer thyristor T will be described here as an example of the transfer element, other circuit elements may be used as long as the elements are turned on in order. For example, a circuit in which a shift register or a plurality of transistors are combined. Elements may be used.

The light source 20 includes coupling diodes D1, D2, D3, ... (Indicated as coupling diode D when not distinguished) while pairing two transfer thyristors T in numerical order. Further, the light source 20 includes power supply line resistors Rg1, Rg2, Rg3, ... (When not distinguished, it is referred to as power supply line resistance Rg).

Further, the light source 20 includes one start diode SD. Then, the current limiting resistors R1 and R2 provided to prevent an excessive current from flowing through the transfer signal line 72 to which the transfer signal φ1 described later is supplied and the transfer signal line 73 to which the transfer signal φ2 is supplied are provided. Be prepared.

Furthermore, the light source 20 is referred to as simultaneous lighting diodes Dg1, Dg2, Dg3, ... (If not distinguished, simultaneous lighting diodes Dg) for simultaneously lighting several light emitting diode LEDs in a plurality of light emitting diode LEDs in parallel. ) Is provided. The simultaneous lighting diode Dg will be described in detail later.

The light emitting diode LED, the driving thyristor B, and the transfer thyristor T are arranged in numerical order from the left side in FIG. Further, the coupling diode D and the power supply line resistor Rg are also arranged in numerical order from the left side in the figure.

In the first embodiment, the number of the light emitting diode LED, the drive thyristor B, the transfer thyristor T, and the power supply line resistor Rg may be a predetermined number. The number of coupling diodes D may be one less than the number of transfer thyristors T. The number of transfer thyristors T may be larger than the number of light emitting diode LEDs.

The above-mentioned light emitting diode LED is a two-terminal semiconductor element having an anode terminal (anode) and a cathode terminal (cathode), and the thyristor (drive thyristor B, transfer thyristor T) is an anode terminal (anode), a gate terminal (gate) and The semiconductor element having three terminals of the cathode terminal (cathode), the coupling diode D1 and the start diode SD are two-terminal semiconductor elements having an anode terminal (anode) and a cathode terminal (cathode). In the following, terminals are abbreviated and shown in parentheses.

The light emitting diode LED, the driving thyristor B, the transfer thyristor T, the coupling diode D, the power supply line resistor Rg, the start diode SD, and the simultaneous lighting diode Dg were epitaxially grown on a common semiconductor substrate (hereinafter, referred to as a substrate 80). It is configured as an integrated circuit by a semiconductor laminate. Here, the semiconductor laminate is composed of a group III-V compound semiconductor such as GaAs, GaAlAs, and AlAs as an example.

Next, the electrical connection of each element in the light source 20 will be described.
Each anode of the transfer thyristor T and the drive thyristor B is connected to the substrate 80 (anode common).
Then, the reference potential Vsub is supplied to these anodes via the back electrode, which is a Vsub terminal provided on the back surface of the substrate 80. It should be noted that this connection is a configuration when the p-type substrate 80 is used, and the polarity is reversed when the n-type substrate is used, and when an intrinsic (i) type substrate to which impurities are not added is used. Is provided with a terminal for supplying the reference potential Vsub on the side of the substrate on which the light emitting diode LED or the like is provided.

Along the arrangement of the transfer thyristors T, the cathodes of the odd-numbered transfer thyristors T1, T3, ... Are connected to the transfer signal line 72. The transfer signal line 72 is connected to the φ1 terminal via the current limiting resistor R1. The transfer signal φ1 is supplied to the φ1 terminal from the transfer signal generation unit 120 of the control unit 110.
On the other hand, along the arrangement of the transfer thyristors T, the cathodes of the even-numbered transfer thyristors T2, T4, ... Are connected to the transfer signal line 73. The transfer signal line 73 is connected to the φ2 terminal via the current limiting resistor R2. The transfer signal φ2 is supplied to the φ2 terminal from the transfer signal generation unit 120 of the control unit 110.

The cathode of the light emitting diode LED is connected to the lighting signal line 74. The lighting signal line 74 is connected to the φI terminal. A lighting signal φI is supplied to the φI terminal from the lighting signal generation unit 140 of the control unit 110. The lighting signal φI supplies a current for lighting to the light emitting diode LED.

The gates Gt1, Gt2, Gt3, ... (Indicated as gate Gt when not distinguished) of the transfer thyristors T1, T2, T3, ... Are the gates Gb1 of the drive thyristors B1, B2, B3, ... , Gb2, Gb3, ... (If not distinguished, it is referred to as gate Gb), and is connected on a one-to-one basis. Therefore, the gate Gt and the gate Gb having the same number are electrically at the same potential. Therefore, for example, it is expressed as gate Gt1 / Gb1 to indicate that the potentials are the same. Then, the wiring from the power potential line 71 to the gate Gb1 via the power line resistor Rg1 and the gate Gt1 is referred to as a gate signal line 55. The wiring from the power potential line 71 to the gate Gb2 via the power line resistor Rg2 and the gate Gt2 is referred to as a gate signal line 56. The wiring from the power potential line 71 to the gate Gb3 via the power line resistor Rg3 and the gate Gt3 is referred to as a gate signal line 57. The wiring from the power potential line 71 to the gate Gb4 via the power line resistor Rg4 and the gate Gt4 is referred to as a gate signal line 58. The power potential line 71 is an example of a power supply line, the gate signal line 55 to 58 is an example of a drive signal line, and the potential set in the gate signal line 55 to 58 is an example of a drive signal. When the gate signal lines 55 to 28 are not distinguished from each other, they are referred to as gate signal lines.

A coupling diode D is connected between the gates Gt in which two gates Gt of the transfer thyristor T are paired in numerical order. For example, a coupling diode D1 is provided between the gate Gt1 and the gate Gt2. The direction of the coupling diode D1 is connected in the direction in which the current flows from the gate Gt1 to the gate Gt2. The same applies to the other coupling diode D.

The gate Gt / Gb of the transfer thyristor T is connected to the power potential line 71 via a power line resistor Rg provided corresponding to each of the transfer thyristors T. The power potential line 71 is connected to the Vgk terminal. The power potential Vgk is supplied to the Vgk terminal from the power potential supply unit 170 of the control unit 110.

Then, the gate Gt1 of the transfer thyristor T1 is connected to the cathode of the start diode SD. On the other hand, the anode of the start diode SD is connected to the transfer signal line 73.

Further, the cathode of the simultaneous lighting diode Dg is connected to the gate Gb of the drive thyristor B. The anodes of the simultaneous lighting diodes Dg1 and Dg2 are connected to the gates Gb1 and Gb2 of the drive thyristors B1 and B2, respectively. The anodes of the simultaneous lighting diodes Dg1 and Dg1 and 2 are connected to the φg1 terminal. Simultaneous lighting signal φg1 is supplied to the φg1 terminal from the simultaneous lighting signal generation unit 190 of the control unit 110. The anodes of the simultaneous lighting diodes Dg3 and Dg4 are connected to the gates Gb3 and Gb4 of the drive thyristors B3 and B4, respectively. The anodes of the simultaneous lighting diodes Dg3 and Dg4 are connected to the φg2 terminal. Simultaneous lighting signal φg2 is supplied to the φg2 terminal from the simultaneous lighting signal generation unit 190 of the control unit 110. When the simultaneous lighting signals φg1 and φg2 are not distinguished, they are referred to as simultaneous lighting signals φg.

The simultaneous lighting diode Dg is provided in the light emitting diode LED that emits light in parallel at the same time, and the drive thyristor B of the light emitting diode LED that emits light in parallel at the same time is combined so that the simultaneous lighting signal φg is commonly supplied. The anodes of the lighting diodes Dg are connected to each other. In FIG. 5, the light emitting diodes LED1 and LED2 are assembled to emit light at the same time, and the light emitting diodes LED3 and LED4 are assembled to emit light at the same time. When the light emitting diodes LED1, LED2, and LED3 are to emit light at the same time, the anodes of the simultaneous lighting diodes Dg1, Dg2, and Dg3 may be connected to each other so that the same simultaneous lighting signal φg is supplied. Further, in the arrangement of the light emitting diode LEDs such as the light emitting diode LEDs 1 and LED 3, the anodes of the simultaneous lighting diodes Dg connected to the drive thyristor B are also connected to each other for the light emitting diode LEDs that are not adjacent to each other, and the simultaneous lighting signals are commonly used. φg may be supplied. Further, it is not necessary to provide the simultaneous lighting diode Dg for the light emitting diode LED that does not emit light in parallel at the same time. The same applies to the other embodiments.
The operation of the simultaneous lighting diode Dg will be described in detail later.

(Control unit 110)
The control unit 110 includes a transfer signal generation unit 120, a lighting signal generation unit 140, a reference potential supply unit 160, a power supply potential supply unit 170, and a simultaneous lighting signal generation unit 190. The transfer signal generation unit 120 generates transfer signals φ1 and φ2 that sequentially transfer the transfer thyristor T in the ON state. The lighting signal generation unit 140 generates a lighting signal φI that supplies a current for lighting (lighting) the light emitting diode LED. The simultaneous lighting signal generation unit 190 generates a simultaneous lighting signal φg that causes the light emitting diode LEDs to emit light in parallel at the same time. The reference potential supply unit 160 supplies the reference potential Vsub. The power supply potential supply unit 170 supplies the power supply potential Vgk.

(Thyristor)
The basic operation of the thyristor (transfer thyristor T, drive thyristor B) will be described. As described above, the thyristor is a semiconductor element having three terminals of an anode, a cathode, and a gate, and has a pnpn structure. For example, a p-type semiconductor layer such as GaAs, GaAlAs, or AlAs and an n-type semiconductor layer are laminated on the substrate 80. Here, the forward potential (diffusion potential) Vd of the pn junction composed of the p-type semiconductor layer and the n-type semiconductor layer will be described as 1.5 V as an example.

In the following, as an example, the reference potential Vsub supplied to the Vsub terminal (back electrode) is set to 0 V as a high level potential (hereinafter referred to as “H”), and the power potential Vgk supplied to the Vgk terminal is set to a low level. It will be described as -3.3V as the potential of (hereinafter referred to as "L"). In addition, the electric potential may be added and expressed as "H" (0V) and "L" (-3.3V).

The anode of the thyristor is the reference potential Vsub (“H” (0V)). The thyristor in the off state shifts to the on state (turns on) when a potential lower than the threshold voltage (negative potential having a large absolute value) is applied to the cathode. The off state means a state in which the current flowing between the anode and the cathode is smaller than that in the on state. Here, the threshold voltage of the thyristor is a value obtained by subtracting the forward potential Vd (1.5V) of the pn junction from the potential of the gate.
When turned on, the thyristor gate has a potential close to that of the anode. Here, since the anode is set to the reference potential Vsub (“H” (0V)), the gate is assumed to be 0V (“H”). Further, the cathode of the thyristor in the on state has a potential close to the potential obtained by subtracting the forward potential Vd (1.5V) of the pn junction from the potential of the anode. Here, since the anode is set to the reference potential Vsub (“H” (0V)), the cathode of the thyristor in the on state has a potential close to −1.5V (a negative potential whose absolute value is larger than 1.5V). ). The cathode potential is set in relation to the power supply that supplies the current to the thyristor in the on state.

An on-state thyristor will have a potential higher than the potential required to keep it on (a potential close to -1.5V above) (a negative potential with a small absolute value, 0V or a positive potential). , Transition to the off state (turn off). On the other hand, a potential lower than the potential required to maintain the on state (negative potential with a large absolute value) is continuously applied to the cathode of the thyristor in the on state, and a current capable of maintaining the on state (maintenance current). When supplied, the thyristor remains on.

(Laminate structure of drive thyristor B and light emitting diode LED)
The drive thyristor B and the light emitting diode LED may be configured by stacking the light emitting diode LED on the drive thyristor B provided on the substrate 80. In this case, as can be seen from FIG. 5, when the drive thyristor B and the light emitting diode LED are directly laminated, the cathode of the drive thyristor B and the anode of the light emitting diode LED are reverse biased. Therefore, the drive thyristor B and the light emitting diode LED are laminated via a tunnel junction (diode) layer. Tunnel junction layer, and the n ⁺⁺ layer doped with an n-type impurity at a high concentration, a junction between the p ⁺⁺ layer doped with a p-type impurity at a high concentration. Therefore, even in the reverse bias state, current easily flows through the tunnel junction layer due to the tunnel of electrons. Therefore, when the drive thyristor B is turned on, a current flows between the drive thyristor B and the light emitting diode LED via the reverse bias tunnel junction layer. As a result, the light emitting diode LED emits light (lights up).

Instead of the tunnel junction layer, a group III-V compound layer having metallic conductivity and epitaxially growing on the group III-V compound semiconductor layer may be used. InNAs described as an example of the material of the metallic conductive group III-V compound layer has a negative bandgap energy, for example, when the composition ratio x of InN is in the range of about 0.1 to about 0.8. Further, InNSb has a negative bandgap energy, for example, when the composition ratio x of InN is in the range of about 0.2 to about 0.75. Negative bandgap energy means no bandgap. Therefore, it exhibits the same conductive characteristics (conducting characteristics) as metal. That is, the metallic conductive property (conductivity) means that a current flows if there is a gradient in the potential as in the case of metal.

The drive thyristor B and the light emitting diode LED are laminated and connected in series. Therefore, the voltage applied to the cathode of the drive thyristor B is a voltage obtained by dividing the potential of the lighting signal φI by the drive thyristor B and the light emitting diode LED. Here, it is assumed that the rising voltage of the light emitting diode LED is 1.5V, and -3.3V is applied to the drive thyristor B. Therefore, it is assumed that the lighting signal φI (“Lo” described later) applied when lighting the light emitting diode LED is −5V.
The voltage applied to the light emitting diode LED is changed depending on the emission wavelength and the amount of light. In that case, the voltage of the lighting signal φI (“Lo”) may be adjusted.

(Sequential lighting operation in the light emitting device 4)
Next, the operation of sequentially emitting the light emitting diode LEDs of the light source 20 in the light emitting device 4 to which the first embodiment is applied will be described.
FIG. 6 is a timing chart illustrating an operation of sequentially causing the light emitting diode LEDs of the light source 20 to which the first embodiment is applied to emit light. FIG. 6 is a timing chart of a portion that controls the lighting (light emission) / non-lighting (non-light emission) of the four light emitting diode LEDs of the light emitting diode LEDs 1 to 4 (referred to as lighting control). In FIG. 6, the light emitting diodes LED1, LED2, and LED3 are made to emit light, and the light emitting diode LED4 is not emitted.

In the present specification, "~" indicates a plurality of components which are distinguished from each other by a number, and means that those described before and after "~" and those having a number in between are included. For example, the light emitting diode LEDs 1 to LED 4 include the light emitting diode LEDs 1 to the light emitting diode LEDs 4 in numerical order.

In FIG. 6, it is assumed that the time elapses from time a to time k in alphabetical order. The light emitting diode LED1 emits light in the period T (1), the light emitting diode LED2 emits light in the period T (2), the light emitting diode LED3 emits light in the period T (3), and the light emitting diode LED4 emits light in the period T (4). Light emission is controlled (light emission control).

The transfer signal φ1 supplied to the φ1 terminal (see FIG. 5) and the transfer signal φ2 supplied to the φ2 terminal (see FIGS. 5 and 6) are “H” (0V) and “L” (-3.3V). It is a signal having two potentials of. Then, the waveforms of the transfer signal φ1 and the transfer signal φ2 are repeated in units of two consecutive periods T (for example, period T (1) and period T (2)).
In the following, "H" (0V) and "L" (-3.3V) may be abbreviated as "H" and "L".

The transfer signal φ1 shifts from “H” (0V) to “L” (-3.3V) at the start time b of the period T (1), and shifts from “L” to “H” at time f. Then, at the end time i of the period T (2), the transition from “H” to “L” occurs.
The transfer signal φ2 is “H” (0V) at the start time b of the period T (1), and shifts from “H” (0V) to “L” (-3.3V) at time e. Then, at the end time i of the period T (2), the transition from “L” to “H” occurs.
Comparing the transfer signal φ1 and the transfer signal φ2, the transfer signal φ2 corresponds to the transfer signal φ1 shifted to the back of the period T on the time axis. On the other hand, in the transfer signal φ2, the waveform shown by the broken line and the waveform in the period T (2) are repeated in the period T (1) and after the period T (3). The waveform of the period T (1) of the transfer signal φ2 is different from that after the period T (3) because the period T (1) is the period during which the light emitting device 4 starts operating.

As will be described later, the transfer signal φ1 and the transfer signal φ2 control the lighting or non-lighting of the light emitting diode LED having the same number as the transfer thyristor T in the on state by transferring the on state of the transfer thyristor T in numerical order. Specify as the target of (lighting control).

Next, the lighting signal φI supplied to the φI terminal (see FIG. 5) will be described. The lighting signal φI is a signal having two potentials of “H” (0V) and “Lo” (-5V).
Here, the lighting signal φI will be described during the lighting control period T (1) for the light emitting diode LED1. The lighting signal φI is “H” (0V) at the start time b of the period T (1), and shifts from “H” (0V) to “Lo” (-5V) at time c. Then, it shifts from "Lo" to "H" at time d, and maintains "H" at time e.

The simultaneous lighting signals φg1 and φg2 supplied to the φg1 and φg2 terminals (see FIG. 5) are maintained at “L” (-3.3V).

The operation of the light emitting device 4 will be described with reference to FIG. 5 according to the timing chart shown in FIG. In the following, the periods T (1) and T (2) for controlling the lighting of the light emitting diodes LEDs 1 and 2 will be described.
(1) Time a
At time a, the reference potential supply unit 160 of the control unit 110 of the light emitting device 4 sets the reference potential Vsub to “H” (0V). The power potential supply unit 170 sets the power potential Vgk to “L” (-3.3V). The transfer signal generation unit 120 of the control unit 110 sets the transfer signal φ1 and the transfer signal φ2 to “H” (0V), respectively. As a result, the φ1 terminal and the φ2 terminal of the light source 20 become “H”. The potential of the transfer signal line 72 connected to the φ1 terminal via the current limiting resistor R1 also becomes “H”, and the transfer signal line 73 connected to the φ1 terminal via the current limiting resistor R2 also becomes “H”. (See Fig. 5).

Then, the lighting signal generation unit 140 of the control unit 110 sets the lighting signal φI to “H” (0V). As a result, the φI terminal of the light source 20 becomes “H” via the current limiting resistor RI, and the lighting signal line 74 connected to the φI terminal also becomes “H” (0V) (see FIG. 5).
Further, the simultaneous lighting signal generation unit 190 of the control unit 110 sets the simultaneous lighting signals φg1 and φg2 to “L” (-3.3V).

Since the anodes of the transfer thyristor T and the drive thyristor B are connected to the Vsub terminal, they are set to "H". The cathodes of the odd-numbered transfer thyristors T1, T3, ... Are connected to the transfer signal line 72 and set to "H" (0V). The cathodes of the even-numbered transfer thyristors T2, T4, ... Are connected to the transfer signal line 73 and set to "H". Therefore, the transfer thyristor T is in the off state because both the anode and the cathode are “H”.

The cathode of the light emitting diode LED is connected to the "H" (0V) lighting signal line 74. That is, the light emitting diode LED and the drive thyristor B are connected in series via a tunnel junction layer. Since the cathode of the light emitting diode LED is "H" and the anode of the driving thyristor B is "H", the light emitting diode LED and the driving thyristor B are in the off state.

As described above, the gate Gt1 is connected to the cathode of the start diode SD. The gate Gt1 is connected to the power supply potential line 71 of the power supply potential Vgk (“L” (-3.3V)) via the power supply line resistor Rg1. The anode of the start diode SD is connected to the transfer signal line 73, and is connected to the φ2 terminal of “H” (0V) via the current limiting resistor R2. Therefore, the start diode SD is forward biased, and the cathode (gate Gt1) of the start diode SD is the forward potential Vd (1.5V) of the pn junction from the potential (“H” (0V)) of the anode of the start diode SD. Is subtracted (-1.5V). Further, when the gate Gt1 becomes −1.5V, the coupling diode D1 has the anode (gate Gt1) of −1.5V and the cathode of the power supply potential line 71 (“L” (-3. Since it is connected to 3V)), it becomes a forward bias. Therefore, the potential of the gate Gt2 is -3V obtained by subtracting the forward potential Vd (1.5V) of the pn junction from the potential of the gate Gt1 (−1.5V). However, the gates Gt having a number of 3 or more are not affected by the fact that the anode of the start diode SD is “H” (0V), and the potentials of these gates Gt are the potentials of the power supply potential line 71. It is "L" (-3.3V).

Since the gate Gt is the gate Gb, the potential of the gate Gb is the same as the potential of the gate Gt. Since the simultaneous lighting signals φg1 and φg2 are “L” (-3.3V), even if the gate Gb has a higher potential than “L” (-3.3V) (a negative potential whose absolute value is smaller than 3.3V). Even so, the simultaneous lighting diode Dg is in a state in which a potential is applied in a direction in which current does not easily flow (reverse bias). Therefore, the fact that the simultaneous lighting signals φg1 and φg2 are “L” (-3.3V) does not affect the gate Gb. Hereinafter, the description of the simultaneous lighting signals φg1 and φg2 will be omitted.

Therefore, the threshold voltage of the transfer thyristor T and the drive thyristor B is a value obtained by subtracting the forward potential Vd (1.5 V) of the pn junction from the potentials of the gates Gt and Gb. That is, the threshold voltage of the transfer thyristor T1 and the drive thyristor B1 is -3V, the threshold voltage of the transfer thyristor T2 and the drive thyristor B2 is -4.5V, and the threshold voltage of the transfer thyristor T and the drive thyristor B having a number of 3 or more. Is -4.8V.

(2) Time b
At time b shown in FIG. 6, the transfer signal φ1 shifts from “H” (0V) to “L” (-3.3V). As a result, the light emitting device 4 starts operation.
When the transfer signal φ1 shifts from “H” to “L”, the potential of the transfer signal line 72 changes from “H” (0V) to “L” (-3.3V) via the φ1 terminal and the current limiting resistor R1. Move to. Then, the transfer thyristor T1 having a threshold voltage of -3V is turned on. However, an odd-numbered transfer thyristor T having a cathode connected to the transfer signal line 72 and having a number of 3 or more cannot be turned on because the threshold voltage is -4.8 V. On the other hand, the even-numbered transfer thyristor T cannot be turned on because the transfer signal φ2 is “H” (0V) and the transfer signal line 73 is “H” (0V).
When the transfer thyristor T1 is turned on, the potential of the transfer signal line 72 becomes -1.5 V, which is obtained by subtracting the forward potential Vd (1.5 V) of the pn junction from the potential of the anode (“H” (0 V)). ..

When the transfer thyristor T1 is turned on, the potential of the gate Gt1 / Gb1 becomes “H” (0V), which is the potential of the anode of the transfer thyristor T1. Then, the potential of the gate Gt2 / Gb2 is −1.5V, the potential of the gate Gt3 / Gb3 is -3V, and the potential of the gate Gt / Gb having a number of 4 or more is “L”.
As a result, the threshold voltage of the drive thyristor B1 is -1.5V, the threshold voltage of the transfer thyristor T2 and the drive thyristor B2 is -3V, the threshold voltage of the transfer thyristor T3 and the drive thyristor B3 is -4.5V, and the number is changed. The threshold voltage of the transfer thyristor T and the drive thyristor B of 4 or more becomes -4.8V.
However, since the transfer signal line 72 is set to −1.5 V by the transfer thyristor T1 in the on state, the transfer thyristor T having an odd number in the off state does not turn on. Since the transfer signal line 73 is “H” (0V), the even-numbered transfer thyristor T does not turn on. Since the lighting signal line 74 is “H” (0V), none of the light emitting diode LEDs are lit.

Immediately after time b (here, when the thyristor or the like changes due to a change in the signal potential at time b and then enters a steady state), the transfer thyristor T1 is in the ON state and another transfer is performed. The thyristor T, the drive thyristor B, and the light emitting diode LED are in the off state.

(3) Time c
At time c, the lighting signal φI shifts from “H” (0V) to “Lo” (-5V).
When the lighting signal φI shifts from “H” to “Lo”, the lighting signal line 74 shifts from “H” (0V) to “Lo” (-5V) via the current limiting resistor RI and the φI terminal. Then, 3.3V, which is the sum of the voltage applied to the light emitting diode LED of 1.7V, is applied to the driving thyristor B1, the driving thyristor B1 having a threshold voltage of −1.5V turns on, and the light emitting diode LED1 is turned on. Lights up (lights up). As a result, the potential of the lighting signal line 74 becomes a potential close to -3.2V (a negative potential whose absolute value is larger than 3.2V). The threshold voltage of the drive thyristor B2 is -3V, but the voltage applied to the drive thyristor B2 is -1.5V, which is the sum of the voltages of 1.7V and -3.2V applied to the light emitting diode LED. Therefore, the drive thyristor B2 does not turn on.
Immediately after time c, the transfer thyristor T1 and the drive thyristor B1 are in the ON state, and the light emitting diode LED1 is lit (light emitting).

(4) Time d
At time d, the lighting signal φI shifts from “Lo” (-5V) to “H” (0V).
When the lighting signal φI shifts from “Lo” to “H”, the potential of the lighting signal line 74 shifts from -3.2V to “H” via the current limiting resistor RI and the φI terminal. Then, both the cathode of the light emitting diode LED1 and the anode of the driving thyristor B1 become "H", so that the driving thyristor B1 turns off and the light emitting diode LED1 turns off (turns off). The lighting period of the light emitting diode LED1 is from the time c when the lighting signal φI shifts from “H” to “Lo” to the time d when the lighting signal φI shifts from “Lo” to “H”, and the lighting signal φI is “ It is a period of "Lo" (-5V).
Immediately after time d, the transfer thyristor T1 is in the ON state.

(5) Time e
At time e, the transfer signal φ2 shifts from “H” (0V) to “L” (-3.3V). Here, the period T (1) for controlling the lighting of the light emitting diode LED 1 ends, and the period T (2) for controlling the lighting of the light emitting diode LED 2 starts.
When the transfer signal φ2 shifts from “H” to “L”, the potential of the transfer signal line 73 shifts from “H” to “L” via the φ2 terminal. As described above, the transfer thyristor T2 turns on because the threshold voltage is -3V. As a result, the potential of the gate Gt2 / Gb2 becomes “H” (0V), the potential of the gate Gt3 / Gb3 becomes −1.5V, and the potential of the gate Gt4 / Gb4 becomes -3V. Then, the potential of the gate Gt / Gb having a number of 5 or more becomes -3.3V.
Immediately after time e, the transfer thyristors T1 and T2 are in the ON state.

(6) Time f
At time f, the transfer signal φ1 shifts from “L” (-3.3V) to “H” (0V).
When the transfer signal φ1 shifts from “L” to “H”, the potential of the transfer signal line 72 shifts from “L” to “H” via the φ1 terminal. Then, the transfer thyristor T1 in the on state turns off when both the anode and the cathode become "H". Then, the potential of the gate Gt1 / Gb1 changes toward the power supply potential Vgk (“L” (-3.3V)) of the power supply potential line 71 via the power supply line resistor Rg1. As a result, the coupling diode D1 becomes reverse biased. Therefore, the influence that the gate Gt2 / Gb2 is "H" (0V) does not reach the gate Gt1 / Gb1. That is, the transfer thyristor T having the gate Gt connected by the reverse bias coupling diode D has a threshold voltage of -4.8 V, and the transfer signal φ1 or the transfer signal φ2 of “L” (-3.3 V). Then it will not turn on.
Immediately after time f, the transfer thyristor T2 is in the ON state.

(7) Others When the lighting signal φI1 shifts from “H” (0V) to “Lo” (-5V) at time g, the drive thyristor B1 turns on like the drive thyristor B1 and the light emitting diode LED1 at time c. Then, the light emitting diode LED2 lights up (lights up).
Then, when the lighting signal φI shifts from “Lo” (-5V) to “H” (0V) at time h, the drive thyristor B2 turns off in the same manner as the drive thyristor B1 and the light emitting diode LED1 at time d. , The light emitting diode LED2 turns off.
Further, when the transfer signal φ1 shifts from “H” (0V) to “L” (-3.3V) at time i, the transfer thyristor T1 at time b or the transfer thyristor T2 at time e The transfer thyristor T3 with a positive voltage of -3V turns on. At time i, the period T (2) for controlling the lighting of the light emitting diode LED 2 ends, and the period T (3) for controlling the lighting of the light emitting diode LED 3 starts.
After that, the above description will be repeated.

When the light emitting diode LED is not turned on (lights) and is left off (non-lighted), the lighting signal shown from time j to time k in the period T (4) in which the light emitting diode LED 4 of FIG. 6 is controlled to be turned on. As in φI1, the lighting signal φI may remain “H” (0V). By doing so, even if the threshold voltage of the driving thyristor B4 is −1.5V, the driving thyristor B4 does not turn on and the light emitting diode LED4 remains off (non-lit).

As described above, the gates Gt of the transfer thyristor T are connected to each other by the coupling diode D. Therefore, when the potential of the gate Gt changes, the potential of the gate Gt connected to the gate Gt whose potential has changed via the forward bias coupling diode D changes. Then, the threshold voltage of the transfer thyristor T having the gate whose potential has changed changes. In the transfer thyristor T, when the threshold voltage is higher than "L" (-3.3V) (negative value with a small absolute value), the transfer signal φ1 or transfer signal φ2 changes from "H" (0V) to "L" ( -Turn on at the timing of transition to 3.3V).
The drive thyristor B in which the gate Gb is connected to the gate Gt of the transfer thyristor T in the on state has a threshold voltage of −1.5V, so that the lighting signal φI changes from “H” (0V) to “Lo” ( When it shifts to -5V), it turns on and the light emitting diode LED connected in series to the drive thyristor B lights up (lights up).
That is, when the potential of the gate Gb of the drive thyristor B (gate signal line such as the gate signal line 55) reaches −1.5 V, the drive thyristor B can be turned on. Then, when the lighting signal φI shifts from “H” (0V) to “Lo” (-5V), the drive thyristor B is turned on and the light emitting diode LED is lit (light emitting). That is, the drive thyristor B is driven so that the light emitting diode LED lights up when it is turned on.

That is, when the transfer thyristor T is turned on, the light emitting diode LED that is the target of lighting control is specified, and the lighting signal φI of “Lo” (-5V) is connected to the light emitting diode LED that is the target of lighting control. The connected drive thyristor B is turned on and the light emitting diode LED is turned on. That is, when the ON state of the transfer thyristor T is transferred, the light emitting diode LEDs are sequentially turned on. The light source 20 is a self-scanning light emitting device array (SLED: Self-Scanning Light Emitting Device).
The lighting signal φI of “H” (0V) keeps the drive thyristor B in the off state and keeps the light emitting diode LED in the non-lighting state. That is, the lighting signal φI sets the lighting / non-lighting of the light emitting diode LED.

(All simultaneous lighting operation of the light source 20 in the light emitting device 4)
In the light source 20, it may be required to light all of the plurality of light emitting diode LEDs in parallel at the same time. Simultaneous means that all the light emitting diode LEDs are lit at one timing of the signal. Then, lighting all the light emitting diode LEDs in parallel at the same time is referred to as all simultaneous lighting operation. For example, in the inspection for the presence or absence of lighting defects of the light emitting diode LED and the burn-in of the light emitting diode LED, which are performed after the manufacture of the light source 20, the efficiency is improved if all the light emitting diode LEDs of the light source 20 are turned on. Burn-in is a method of reducing initial defects in advance by applying a load of temperature and voltage. In particular, when a laser element such as a vertical cavity surface emitting laser element (VCSEL) is used instead of the light emitting diode LED, it is required to perform burn-in after manufacturing. Further, when measuring the pattern of light emitted from the light source 20 (near-field pattern or far-field pattern), it may be desired to turn on all the light emitting diode LEDs. In addition, all simultaneous lighting operations may be referred to as simultaneous lighting operations.

The operation of lighting all the light sources 20 at the same time will be described.
As described above, in order to light the light emitting diode LED, the drive thyristor B may turn on with the lighting signal φI. Therefore, in the all simultaneous lighting operation, the drive thyristor B connected to all the light emitting diode LEDs is turned on by the lighting signal φI.

In the sequential lighting operation of the light emitting device 4, the power supply potential supply unit 170 of the control unit 110 sets the power supply potential Vgk to be supplied to “L” (-3.3V). In all simultaneous lighting operations, the reference potential supply unit 160 of the control unit 110 sets the reference potential Vsub to "H" (0V), and the power potential supply unit 170 sets the power potential Vgk to "H" (0V). do. Then, the lighting signal generation unit 140 sets the lighting signal φI to “Lo” (-5V).

Then, the gate Gb of the drive thyristor B becomes "H" (0 V), and the threshold voltage of the drive thyristor B becomes −1.5 V. That is, when the potential of the gate Gb of the drive thyristor B (gate signal line such as the gate signal line 55) reaches −1.5 V, the drive thyristor B can be turned on. Therefore, when the lighting signal φI is “Lo” (−5V), the drive thyristor B turns on and the light emitting diode LED lights up (lights up) at the same time as the time c in FIG. That is, all the light emitting diode LEDs are lit in parallel at the same time. This state is not affected by other signals (transfer signals φ1, φ2, simultaneous lighting signals φg1, φg2). Therefore, it is not necessary to set the potentials of other terminals (φ1 terminal, φ2 terminal, φg1 terminal, φg2 terminal). That is, the other terminals (φ1 terminal, φ2 terminal, φg1 terminal, φg2 terminal) may be open.

(Partial simultaneous lighting operation of the light source 20 in the light emitting device 4)
In the light source 20, it may be required to light a part of a plurality of light emitting diode LEDs as a set. This is referred to as partial simultaneous lighting operation. In this case, the simultaneous lighting diode Dg is used.

The partial simultaneous lighting operation of the light source 20 will be described.
As described above, in order to light the light emitting diode LED, the drive thyristor B may turn on with the lighting signal φI. Therefore, in the partial simultaneous lighting operation, the drive thyristor B connected to the assembled light emitting diode LED is turned on by the lighting signal φI.

For example, when the light emitting diodes LED1 and LED2 are paired and lit in parallel at the same time, the reference potential supply unit 160 of the control unit 110 sets the reference potential Vsub to "H" (0V) and generates a simultaneous lighting signal. The simultaneous lighting signal φg1 of unit 190 (simultaneous lighting signal φg1 supplied to the anodes of the simultaneous lighting diodes Dg1 and Dg2) is set to “H” (0V). Then, the lighting signal generation unit 140 sets the lighting signal φI to “Lo” (-5V). Then, the gates Gb1 and Gb2 of the drive thyristors B1 and B2 become −1.5 V, and the threshold voltage of the drive thyristors B1 and B2 becomes −3.0 V. That is, when the potentials of the gates Gb1 and Gb2 of the drive thyristors B1 and B2 (gate signal lines 55 and 55) reach −1.5 V, the drive thyristors B1 and B2 can be turned on. As described above, 3.3V is applied to the drive thyristors B1 and B2 in the off state, so that the drive thyristors B1 and B2 turn on. As a result, the light emitting diodes LED1 and LED2 are turned on.

The above is the case where the light emitting diodes LED1 and LED2 are combined and lit in parallel at the same time. However, when the light emitting diodes LED3 and LED4 are combined and lit in parallel at the same time, instead of the simultaneous lighting signal φg1. The simultaneous lighting signal φg2 may be set to “H” (0V). In other cases as well, the anode of the simultaneous lighting diode Dg provided corresponding to the paired light emitting diode LEDs may be shared, and the simultaneous lighting signal φg set in the anode may be “H” (0V). When all the light emitting diode LEDs are to be lit in parallel at the same time, a simultaneous lighting diode Dg is provided corresponding to all the light emitting diode LEDs, and the anodes of all the simultaneous lighting diodes Dg are set to "H" (0V). The simultaneous lighting signal φg may be set so as to be.

In FIG. 5, the anodes of the simultaneous lighting diodes Dg1 and Dg2 are connected by wiring, and the anodes of the simultaneous lighting diodes Dg3 and Dg4 are connected by wiring and connected to the simultaneous lighting signal generation unit 190 of the control unit 110. However, the anodes of the respective simultaneous lighting diodes Dg may be connected to the simultaneous lighting signal generation unit 190, and the light emitting diode LEDs to be paired may be selected in the simultaneous lighting signal generation unit 190.

Further, when the partial simultaneous lighting operation is not performed and the sequential lighting operation and the all simultaneous lighting operation are performed, the simultaneous lighting diode Dg may not be provided. Then, the control unit 110 does not have to include the simultaneous lighting signal generation unit 190.

As described above, by controlling the potential of the simultaneous lighting signal φg using the simultaneous lighting diode Dg, the simultaneous lighting diode Dg is put into a reverse bias state in the sequential lighting operation, and the simultaneous lighting is performed in the partial simultaneous lighting control. The diode Dg is in a forward bias state. By doing so, it is easy to control the switching between the sequential lighting operation and the partial simultaneous lighting control.

[Second Embodiment]
In the light emitting device 4 to which the first embodiment is applied, in the sequential lighting operation, the light emitting elements (light emitting diode LEDs in the first embodiment) are turned on in order, and several light emitting elements are turned on in parallel at the same time. I didn't have anything to do. In the light emitting device 4A to which the second embodiment is applied, in the sequential lighting operation, several light emitting elements are lit in parallel at the same time, and a gradation is provided in the amount of light of the light emitting elements.
The light emitting device 4A to which the second embodiment is applied is different from the light emitting device 4 to which the first embodiment is applied in the light source 21 and the control unit 111. Therefore, the description of the same part will be omitted, and the different part will be described. The parts having the same function are designated by the same reference numerals.

FIG. 7 is an equivalent circuit of the light source 21 to which the second embodiment is applied. Note that FIG. 7 also shows the control unit 111.
The light source 21 includes light emitting thyristors L1, L2, L3, ... (If not distinguished, it is referred to as light emitting thyristor L), transfer thyristors T1, T2, T3, ..., Coupling diodes D1, D2, D3, ... , Start diode SD, setting thyristors S1, S2, S3, ..., connection diodes Ds1, Ds2, Ds3, ... (If not distinguished, they are referred to as connection diodes Ds), and power supply line resistors Rg1, Rg2, Rg3. , ... Each gate of the light emitting thyristor L1, L2, L3, ... Is referred to as a gate Gl1, Gl2, Gl3, ... (If not distinguished, it is referred to as a gate Gl). Further, a resistor Rp for connecting the gate Gs of the setting thyristor S and the gate Gl of the light emitting thyristor L is provided.

In the second embodiment, the light emitting thyristor L is used instead of the light emitting diode LED and the driving thyristor B in the first embodiment. The light emitting thyristor L integrally has a light emitting element and a driving element. That is, the light emitting thyristor L is an example of a light emitting element and a driving element. The thyristor emits light at the boundary between the p-gate layer and the n-gate layer in the semiconductor laminate constituting the pnpn structure. Therefore, a thyristor may be used as a light emitting element.

The connection diode Ds is a two-terminal element including an anode and a cathode.

Hereinafter, the connection relationship of each element in the light source 21 will be described. The description of the part similar to the light source 20 to which the first embodiment is applied will be omitted.
The gate Gt of the transfer thyristor T is connected to the anode of the connection diode Ds. The cathode of the connection diode Ds is connected to the gate Gs of the setting thyristor S. The gate Gs of the setting thyristor S is connected to the gate Gl of the light emitting thyristor L via a resistor Rp. The cathode of the setting thyristor S is connected to the setting signal line 75. The setting signal line 75 is connected to the φs terminal. The setting signal φs is supplied to the φs terminal from the setting signal generation unit 180 in the control unit 111.

That is, the gate signal line 55 connects the gate Gs1 of the setting thyristor S1 and the gate Gl1 of the light emitting thyristor L1 from the power potential line 71 via the power line resistor Rg1, the connection diode Ds1, and the resistor Rp. The gate signal line 56 connects the gate Gs2 of the setting thyristor S2 and the gate Gl2 of the light emitting thyristor L2 from the power potential line 71 via the power line resistor Rg2, the connection diode Ds2, and the resistor Rp. The gate signal line 57 connects the gate Gs3 of the setting thyristor S3 and the gate Gl3 of the light emitting thyristor L3 from the power potential line 71 via the power line resistor Rg3, the connection diode Ds3, and the resistor Rp. The gate signal line 58 connects the gate Gs4 of the setting thyristor S4 and the gate Gl4 of the light emitting thyristor L4 from the power potential line 71 via the power line resistor Rg4, the connection diode Ds4, and the resistor Rp.

The cathode of the simultaneous lighting diode Dg is connected to the gate Gl of the light emitting thyristor L. That is, the cathode of the simultaneous lighting diode Dg1 is connected to the gate signal line 55, and the cathode of the simultaneous lighting diode Dg2 is connected to the gate signal line 56. The anodes of the simultaneous lighting diodes Dg1 and Dg2 are connected to the φg1 terminal. Simultaneous lighting signal φg1 is supplied to the φg1 terminal from the simultaneous lighting signal generation unit 190 in the control unit 111.
Further, the cathode of the simultaneous lighting diode Dg3 is connected to the gate signal line 57, and the cathode of the simultaneous lighting diode Dg4 is connected to the gate signal line 58. The anodes of the simultaneous lighting diodes Dg3 and Dg4 are connected to the φg2 terminal. Simultaneous lighting signal φg2 is supplied to the φg2 terminal from the simultaneous lighting signal generation unit 190 in the control unit 111.

The control unit 111 generates a setting signal φs for setting the light emitting thyristor L to light (light emission) / non-lighting (non-light emission) in the control unit 110 of the light emitting device 4 to which the first embodiment is applied. A generation unit 180 is further provided.

(Sequential lighting operation in the light emitting device 4A)
Next, the operation of sequentially emitting the light emitting thyristor L of the light source 21 in the light emitting device 4A will be described.

First, a basic sequential lighting operation of the light source 21 will be described.
Similar to the light source 20 of the light emitting device 4 to which the first embodiment is applied, the transfer thyristor T is transferred in the on state. The lighting signal φI is “L” (-3.3V), and the setting signal φs is “H” (0V). Here, it is assumed that the transfer thyristor T1 is turned on. Then, the gate Gt1 becomes 0V. Therefore, the gate Gs1 connected by the connection diode Ds1 becomes −1.5V. The gate Gl1 of the light emitting thyristor L1 is connected to the gate Gs1 of the setting thyristor S1 which has become −1.5 V via a resistor Rp. Here, the potential drop δ due to the resistance Rp is set to 0.8V. Therefore, the gate Gl1 of the light emitting thyristor L1 becomes -2.3 V obtained by subtracting the potential drop δ (0.8 V) due to the resistance Rp from the potential (−1.5 V) of the gate Gs1. As a result, the threshold voltage of the light emitting thyristor L1 becomes -3.8V. Therefore, even if the lighting signal φI is “L” (-3.3V), the light emitting thyristor L1 does not light.

Since the gate Gs1 of the setting thyristor S1 is −1.5V, the threshold voltage is −3.0V. Therefore, when the setting signal φs becomes “L” (-3.3V), the setting thyristor S1 turns on. Then, the gate Gs1 becomes 0V. Therefore, in the light emitting thyristor L1, the gate Gl1 becomes −0.8V and the threshold voltage becomes −2.3V. Then, since the lighting signal φI is “L” (-3.3V), the light emitting thyristor L1 turns on and lights (lights).
That is, when the potential of the gate Gl of the light emitting thyristor L (gate signal line such as the gate signal line 55) reaches -2.3 V, the light emitting thyristor L is in a state where it can shift to the on state.

At this time, when the setting signal φs becomes “H” (0V), the setting thyristor S1 turns off. However, if the lighting signal φI maintains “L” (-3.3V), the light emitting thyristor L1 continues to light. The simultaneous lighting signals φg1 and φg2 are maintained at “L” (-3.3V).

As described above, in the light source 21, when the setting thyristor S is turned on while the transfer thyristor T is in the ON state, the light emitting thyristor L connected to the setting thyristor S via the resistor Rp is turned on. Then, the light emitting thyristor L continues to be lit during the period when the lighting signal φI is “L” (-3.3V).

As described above, in the sequential lighting operation of the light source 21 to which the second embodiment is applied, the ON state of the transfer thyristor T is sequentially transferred, and the light emitting thyristor L is sequentially designated as a lighting control target. At this time, when the set thyristor S turns on (turns on), the light emitting thyristor L lights up. That is, the light source 21 is a self-scanning light emitting element array.

FIG. 8 is a timing chart illustrating an operation of sequentially lighting the light emitting thyristor L of the light source 21 to which the second embodiment is applied. FIG. 8 is a timing chart of a portion that controls lighting (light emission) / non-lighting (non-light emission) of the four light emitting thyristors L1 to L4 (referred to as lighting control). It is assumed that time elapses in alphabetical order (time a, b, c, ...). The times a, b, c, ... In FIG. 8 are different from the times a, b, c, ... In FIG.

Here, it is assumed that 256 gradations are realized for the light emitting thyristor L. That is, in order to realize 256 gradations, the lighting duration Uc that continues lighting is divided into 255, and the gradation setting periods Ug1, Ug2, Ug3, ..., Ug255 (if not distinguished, the floor) A key setting period Ug is provided.) Then, in each gradation setting period Ug, the periods U (L1) to U (L4) for setting the respective light emitting thyristors L1 to L4 to either lighting or non-lighting (when not distinguished, they are referred to as period U). Is provided.

The gradation setting period Ug1 is from time c to time h, the gradation setting period Ug2 is from time h to time i, the gradation setting period Ug3 is from time i to time j, and the gradation setting period Ug4 is from time j to time. Up to k, the gradation setting period Ug255 is from time l to time m. The other gradation setting periods Ug5 to Ug254 are provided between the gradation setting period Ug4 and the gradation setting period Ug255. The lighting duration Uc is from time c to time m.

Then, in the gradation setting period Ug1, the period U (L1) for setting the light emitting thyristor L1 to either on / off is set from time c to time d, and the light emitting thyristor L2 is set to either on / off. The period U (L2) is set to either the time e from the time d and the light emitting thyristor L3 is turned on / off. The period U (L4) set to is from time f to time h. Similarly, in the other gradation setting periods Ug2 to Ug255, a period U for setting the light emitting thyristors L1 to L4 to either lighting or non-lighting is provided.

Here, as an example, the light emitting thyristor L1 is maintained in a non-lighting state (gradation 0). The light emitting thyristor L2 is lit for 255 periods out of 255 gradation setting periods Ug (gradation 255). The light emitting thyristor L3 is lit for one period out of 255 gradation setting periods Ug (gradation 1). The light emitting thyristor L4 is lit for 252 periods out of 255 gradation setting periods Ug (gradation 252). That is, 256 gradations can be obtained by setting each of the light emitting thyristors L1 to L4 to either a lighting state or a non-lighting state in any of the 255 gradation setting periods Ug. In this way, the transfer control for sequentially transferring the ON states of the transfer thyristors T1 to T4 is repeated a number of times corresponding to the number of gradations (for example, 256 gradations), and the transfer control is repeated a number of times corresponding to the gradation to be output. At this point, the gradation is controlled by causing the light emitting thyristor L to be lit to start light emission.

If the period U for setting the light emitting thyristor L to either the lit / non-lit state is 10 ns, the gradation setting period Ug is 40 ns. Then, the lighting duration Uc for realizing 256 gradations is 10.2 μs, which is 255 times the gradation setting period Ug of 40 ns.

Since the set signal φs is maintained at “H” (0V) during the period U (L1) (time c to time d) of the gradation setting period Ug1, the light emitting thyristor L1 is maintained in the non-lighting state. Next, in the period U (L2) (time d to time e) of the gradation setting period Ug1, the setting signal φs is set to “L” (-3.3V), so that the light emitting thyristor L2 turns on. Lights up. Then, this lighting state is maintained for the lighting duration Uc.

Since the set signal φs is maintained at “H” (0V) during the period U (L3) (time e to time f) of the gradation setting period Ug1, the light emitting thyristor L3 is maintained in the non-lighting state.

Since the set signal φs is maintained at “H” (0V) during the period U (L4) (time f to time h) of the gradation setting period Ug1, the light emitting thyristor L4 is maintained in the non-lighting state. However, at the time g of the period U (L4) of the gradation setting period Ug1, the transfer signal φ2 shifts from “L” (-3.3V) to “H” (0V). Then, the transfer thyristor T4 in the on state shifts to the off state. Therefore, at time h, all transfer thyristors T1 to T4 (see FIG. 7) are turned off. This is the same as the state immediately before the time c (for the transfer thyristor T, the initial state at the time a). As a result, the on-state transfer by the transfer thyristor T returns from the transfer thyristor T4 to the transfer thyristor T1.

Subsequent gradation setting periods Ug2 to Ug255 are repetitions of the gradation setting period Ug1.
Then, the light emitting thyristor L4 shifts from the off state (non-lighting state) to the on state (lighting state) in the gradation setting period Ug4, and the light emitting thyristor L3 shifts from the off state (non-lighting state) in the gradation setting period Ug255. It shifts to the on state (lighting state).
Then, at the time m when the gradation setting period Ug255 ends, the lighting signal φI shifts from “L” (-3.3V) to “H” (0V), so that the light emitting thyristors L2 and L3 that were in the lighting state are displayed. , L4 turns off and shifts to the non-lighting state.

As described above, since the light emitting thyristor L2 maintains the lighting state during the gradation setting period Ug1 to Ug255, the gradation becomes 255. Since the light emitting thyristor L3 maintains the lighting state during the gradation setting period Ug4 to Ug255, the gradation becomes 252. Since the light emitting thyristor L4 maintains the lighting state during the gradation setting period Ug255, it becomes gradation 1. On the other hand, the light emitting thyristor L1 maintains the non-lighting state during the gradation setting period Ug1 to Ug255, so that the gradation becomes 0. That is, 256 gradations are realized.
Since the operation of the light source 21 not described here is the same as the operation of the light source 20 described in the first embodiment, the description thereof will be omitted.

(All simultaneous lighting operation of the light source 21 in the light emitting device 4A)
The all simultaneous lighting operation of lighting all the light emitting thyristors L in parallel in the light source 21 will be described.
In order to light the light emitting thyristor L, the light emitting thyristor L may be turned on by the lighting signal φI. Therefore, in the all simultaneous lighting operation, all the light emitting thyristors L are turned on by the lighting signal φI.

In the sequential lighting operation of the light emitting device 4A, the power potential Vgk supplied by the power potential supply unit 170 of the control unit 111 was set to “L” (-3.3V). In the all simultaneous lighting operation, the reference potential Vsub supplied by the reference potential supply unit 160 of the control unit 111 and the power potential Vgk supplied by the power potential supply unit 170 are set to “H” (0V). Then, the lighting signal φI generated by the lighting signal generation unit 140 is set to “L” (-3.3V).

When the power potential Vgk is set to "H" (0V), the gate Gl of the light emitting thyristor L connected to the power potential line 71 of "H" (0V) via the current limiting resistor R, the connection diode Ds, and the resistor Rp. Becomes "H" (0V). Then, the threshold voltage of the light emitting thyristor L becomes −1.5V. Therefore, when the lighting signal φI becomes “L” (-3.3V), the light emitting thyristor L lights (lights). That is, all the light emitting thyristors L are turned on in parallel at the same time. This state is not affected by other signals (transfer signals φ1, φ2, setting signals φs, simultaneous lighting signals φg1, φg2). Therefore, it is not necessary to set the potentials of other terminals (φ1 terminal, φ2 terminal, φs terminal, φg1 terminal, φg2 terminal). That is, the other terminals (φ1 terminal, φ2 terminal, φs terminal, φg1 terminal, φg2 terminal) may be open.

(Partial simultaneous lighting operation of the light source 21 in the light emitting device 4A)
A partial simultaneous lighting operation of lighting a plurality of light emitting diode LEDs in a light source 21 by combining a part of light emitting thyristors L will be described.
In order to light the light emitting thyristor L, the light emitting thyristor L may be turned on by the lighting signal φI. Therefore, in the partial simultaneous lighting operation, the assembled light emitting thyristor L is turned on by the lighting signal φI.

For example, when the light emitting thyristors L1 and L2 are paired and turned on in parallel at the same time, the reference potential supply unit 160 of the control unit 111 sets the reference potential Vsub to “H” (0V). Then, the simultaneous lighting signal φg1 (simultaneous lighting signal φg1 supplied to the anodes of the simultaneous lighting diodes Dg1 and Dg2) of the simultaneous lighting signal generation unit 190 is set to “H” (0V), and the lighting signal of the lighting signal generation unit 140 is set. Set φI to “L” (-3.3V). When the simultaneous lighting signal φg1 is set to “H” (0V), the threshold voltage of the light emitting thyristors L1 and L2 becomes −1.5V. Since "L" (-3.3V) is applied to the light emitting thyristors L1 and L2, the light emitting thyristors L1 and L2 are lit.

The above is the case where the light emitting thyristors L1 and L2 are combined and turned on in parallel at the same time, but when the light emitting thyristors L3 and L4 are combined and turned on in parallel at the same time, instead of the simultaneous lighting signal φg1. The simultaneous lighting signal φg2 may be set to “H” (0V). In other cases as well, the anode of the simultaneous lighting diode Dg provided corresponding to the assembled light emitting thyristor L may be shared, and the simultaneous lighting signal φg set in the anode may be set to “H” (0V). When all the light emitting diode LEDs are to be lit in parallel at the same time, the simultaneous lighting diode Dg is provided corresponding to all the light emitting thyristors L, and the anodes of all the simultaneous lighting diodes Dg are set to "H" (0V). The simultaneous lighting signal φg may be set so as to be.

In FIG. 7, the anodes of the simultaneous lighting diodes Dg1 and Dg2 are connected by wiring, and the anodes of the simultaneous lighting diodes Dg3 and Dg4 are connected by wiring and connected to the simultaneous lighting signal generation unit 190 of the control unit 111. However, the anode of each simultaneous lighting diode Dg may be connected to the simultaneous lighting signal generation unit 190, and the light emitting thyristor L to be paired may be selected in the simultaneous lighting signal generation unit 190.

Further, when the partial simultaneous lighting operation is not performed and the sequential lighting operation and the all simultaneous lighting operation are performed, the simultaneous lighting diode Dg may not be provided. Then, the control unit 111 does not have to include the simultaneous lighting signal generation unit 190.

[Third Embodiment]
In the light source 20 of the light emitting device 4 to which the first embodiment is applied and the light source 21 of the light emitting device 4A to which the second embodiment is applied, the light emitting elements are arranged one-dimensionally. In the light source 22 of the light emitting device 4B to which the third embodiment is applied, the light emitting elements are arranged two-dimensionally.
The light emitting device 4B to which the third embodiment is applied is different from the light emitting device 4 to which the first embodiment is applied in the light source 22 and the control unit 112. Therefore, the description of the same part will be omitted, and the different part will be described. The parts having the same function are designated by the same reference numerals.

FIG. 9 is an equivalent circuit of the light source 22 to which the third embodiment is applied. Note that FIG. 9 also shows the control unit 112. Here, in the paper of FIG. 9, the direction from right to left is the x direction, and the direction from the bottom to the top is the y direction. The x-direction and the y-direction are orthogonal to each other.
The light source 22 includes 16 laser diode LDs arranged in a 4 × 4 matrix (two-dimensional). The two-dimensional shape means that there are two dimensions, for example, that they spread in the x direction and the y direction. That is, the light emitting element section 101 in which the laser diodes LD11, LD21, LD31, and LD41 are arranged in the x direction, the light emitting element section 102 in which the laser diodes LD12, LD22, LD32, and LD42 are arranged in the x direction, the laser diodes LD13, LD23, A light emitting element unit 103 in which LD33 and LD43 are arranged in the x direction, and a light emitting element unit 104 in which laser diodes LD14, LD24, LD34, and LD44 are arranged in the x direction are provided.

Further, each laser diode LD included in the light emitting element units 101 to 104 is arranged in the y direction. That is, the laser diodes LD11, LD12, LD13, and LD14 are arranged in the y direction, the laser diodes LD21, LD22, LD23, and LD24 are arranged in the y direction, and the laser diodes LD31, LD32, LD33, and LD34 are arranged in the y direction. The laser diodes LD41, LD42, LD43, and LD44 are arranged in the y direction. In this way, when distinguishing each laser diode LD, a two-digit number such as "LD11" is added. In some cases, "i" is added instead of the number in the x direction and "j" is added instead of the number in the y direction to indicate "LDij". The same applies to other cases, but when a number is attached only in the x direction, "i" is attached instead of an individual number, and when a number is attached only in the y direction, "j" is attached instead of an individual number. May be added. Here, i and j are integers of 1 to 4.

In the light source 22 to which the third embodiment is applied, the light emitting element is a laser diode LD. The laser diode LD is, for example, a vertical cavity surface emitting laser element (VCSEL). The laser diode LD may be a light emitting diode LED.

The light source 22 includes 16 drive thyristor DTs. Each drive thyristor DT is connected to each laser diode LD. Here, each drive thyristor DT is connected in series with each laser diode LD. That is, the drive thyristor DT and the laser diode LD form a pair. Therefore, the drive thyristor DT is given the same number as the connected laser diode LD to distinguish them from each other. The drive thyristor DT and the laser diode LD may be connected in series by being laminated via a tunnel junction layer, similarly to the light emitting diode LED and the drive thyristor B of the first embodiment.

The light source 22 includes four transfer thyristors T, four setting thyristors S, four coupling diodes D, four connection diodes Da and Db, and four power line resistors Rg, respectively. Further, it includes a start diode SD and current limiting resistors R1 and R2. Further, the light source 22 includes four simultaneous lighting diodes Dg.

The transfer thyristors T are arranged in the x direction in the order of transfer thyristors T1, T2, T3, and T4. Then, in the coupling diode D, the coupling diodes D1, D2, D3, and D4 are arranged in the x direction. The coupling diodes D1, D2, and D3 are provided between the transfer thyristors T1, T2, T3, and T4, and the coupling diode D4 is provided on the side opposite to the side where the coupling diode D3 of the transfer thyristor T4 is provided. ing.
The setting thyristors S are arranged in the x direction in the order of the setting thyristors S1, S2, S3, and S4.
The connection diodes Da, Db, and the power supply line resistor Rg are also arranged in the x direction in the same manner.
Since the transfer thyristor T, the setting thyristor S, the coupling diode D, the connection diodes Da, Db, and the power supply line resistor Rg are arranged in the x direction, a single digit number is added. In addition, "i" may be added instead of individual numbers.

The connection diodes Da and Db are two-terminal elements including an anode and a cathode.

Hereinafter, the connection relationship of each element in the light source 22 will be described. The description of the part similar to the light source 20 to which the first embodiment is applied will be omitted.

The laser diode LDij and the drive thyristor DTij are connected in series. That is, in the laser diode LDij, the anode is connected to the reference potential Vsub and the cathode is connected to the anode of the driving thyristor DTij.
The reference potential Vsub is supplied via the back surface electrode provided on the back surface of the substrate 80.

The cathode of the drive thyristor DTi1 included in the light emitting element section 101 is connected to the lighting signal line 74-1. The lighting signal line 74-1 is connected to the φI1 terminal. A lighting signal φI1 is supplied to the φI1 terminal from the lighting signal generation unit 140 of the control unit 112.
The cathode of the drive thyristor DTi2 included in the light emitting element unit 102 is connected to the lighting signal line 74-2. The lighting signal line 74-2 is connected to the φI2 terminal. A lighting signal φI2 is supplied from the control unit 112 to the φI2 terminal.
Further, the cathode of the drive thyristor DTi3 included in the light emitting element unit 103 is connected to the lighting signal line 74-3. The lighting signal line 74-3 is connected to the φI3 terminal. A lighting signal φI3 is supplied from the control unit 112 to the φI3 terminal.
Similarly, the cathode of the drive thyristor DTi4 included in the light emitting element unit 104 is connected to the lighting signal line 74-4. The lighting signal line 74-4 is connected to the φI4 terminal. A lighting signal φI4 is supplied from the control unit 112 to the φI4 terminal.
That is, the cathode of the drive thyristor DTij is connected to the lighting signal line 74-j, and the lighting signal line 74-j is connected to the φIj terminal. Then, a lighting signal φIj is supplied from the control unit 112 to the φIj terminal.

In the setting thyristor Si, the anode is connected to the reference potential Vsub and the cathode is connected to the setting signal line 75. The setting signal line 75 is connected to the φs terminal, and the setting signal φs is supplied from the control unit 112.

The gate Gti of the transfer thyristor Ti is connected to the power potential line 71 via the power line resistor Rg. The power potential line 71 is connected to the Vgk terminal, and the power potential Vgk (for example, -3.3V) is supplied from the control unit 112.
The gate Gti of the transfer thyristor Ti is connected to the gate of the setting thyristor Si via the connection diode Dai. Then, the gate Gsi of the setting thyristor Si is connected to the gate Gdij of the drive thyristor DTij via the connection diode Dbi.
That is, a plurality of pairs (here, 4 pairs) of the drive thyristor DT and the laser diode LD are connected to each setting thyristor S.

The gate signal line 55 connects the gate Gs1 of the setting thyristor S1 and the gate Gd1j of the drive thyristor DT1j from the power potential line 71 via the power line resistors Rg1, the connection diodes Da1 and Db1. The gate signal line 56 connects the gate Gs2 of the setting thyristor S2 and the gate Gd2j of the drive thyristor DT2j from the power potential line 71 via the power line resistors Rg1, the connection diodes Da2, and Db2. The gate signal line 57 connects the gate Gs3 of the setting thyristor S3 and the gate Gd3j of the drive thyristor DT3j from the power potential line 71 via the power line resistors Rg3, the connection diodes Da3, and Db3. The gate signal line 58 connects the gate Gs4 of the setting thyristor S4 and the gate Gd4j of the drive thyristor DT4j from the power potential line 71 via the power line resistors Rg4, the connection diodes Da4, and Db4.

The cathode of the simultaneous lighting diode Dgi is connected to the gate Gdig of the drive thyristor DTij. That is, the cathode of the simultaneous lighting diode Dg1 is connected to the gate signal line 55, the cathode of the simultaneous lighting diode Dg2 is connected to the gate signal line 56, and the cathode of the simultaneous lighting diode Dg3 is connected to the gate signal line 57. The cathode of the simultaneous lighting diode Dg4 is connected to the gate signal line 58. As an example, the anodes of the simultaneous lighting diodes Dg1 and Dg2 are connected to the φg1 terminal. Simultaneous lighting signal φg1 is supplied to the φg1 terminal from the simultaneous lighting signal generation unit 190 in the control unit 112. The anodes of the simultaneous lighting diodes Dg3 and Dg4 are connected to the φg2 terminal. Simultaneous lighting signal φg2 is supplied to the φg2 terminal from the simultaneous lighting signal generation unit 190 in the control unit 112.

The configuration of the control unit 112 will be described.
Similar to the control unit 111 of the second embodiment, the control unit 112 includes the transfer signal generation unit 120, the setting signal generation unit 180, the lighting signal generation unit 140, the reference potential supply unit 160, the power supply potential supply unit 170, and the same time. A lighting signal generation unit 190 is provided. The lighting signal generation unit 140 generates a lighting signal φIj and supplies it to the φIj terminal of the light source 20.

In the above, it is assumed that the laser diode LD is arranged in a 4 × 4 two-dimensional shape, but the laser diode LD is not limited to 4 × 4. i and j in i × j may be a plurality of numerical values other than 4. The number of transfer thyristors T and set thyristors S may be i. The number of transfer thyristors T and set thyristors S may exceed i.

(Sequential lighting operation in the light emitting device 4B)
Next, the operation of sequentially emitting the laser diode LD of the light source 22 in the light emitting device 4B will be described.

First, a basic sequential lighting operation of the light source 22 will be described. Here, the case where the laser diode LD11 is turned on will be described. The power supply potential Vgk is “L” (-3.3V), and the reference potential Vsub is “H” (0V). Then, the simultaneous lighting signals φg1 and φg2 are set to “L” (-3.3V).
When the laser diode LD11 is turned on, the lighting signal φI1 is set to “L” (-3.3V) and the setting signal φs is set to “H” (0V). Similar to the light source 20 of the light emitting device 4 to which the first embodiment is applied, the transfer thyristor T is transferred in the on state. When the transfer thyristor T1 is turned on, the gate Gt1 becomes 0V. Then, the gate Gs1 of the setting thyristor S1 becomes −1.5V via the connection diode Da1 connected to the gate Gt1. Then, the threshold voltage of the set thyristor S1 becomes −3.0 V. Here, when the setting signal φs is set to “L” (-3.3V), the setting thyristor S1 turns on and the gate Gs1 becomes 0V. Then, the gate Gd11 of the drive thyristor DT11 becomes −1.5V via the connection diode Db1 connected to the gate Gs1. Then, the threshold voltage of the drive thyristor DT11 becomes −3.0 V. As a result, the laser diode LD11 lights up.
That is, when the potential of the gate Gd of the drive thyristor DT (gate signal line such as the gate signal line 55) reaches −1.5 V, the drive thyristor DT can be turned on. When the lighting signal φI is “L” (-3.3V), the drive thyristor DT is turned on and the laser diode LD is lit (light emitting). That is, the drive thyristor DT is driven so that the laser diode LD lights up when it is turned on.

FIG. 10 is a diagram showing an example of controlling the lighting / non-lighting of the laser diode LD in the light source 22 including the 4 × 4 laser diode LD to which the third embodiment is applied. Here, the laser diode LD that is lit (light-emitting) is indicated by "◯", and the laser diode LD that is not lit (non-emission) is indicated by "x". That is, the laser diodes LD11, LD12, LD14, LD21, LD23, LD31, LD32, LD41, LD43, and LD44 are turned on (light emission), and the laser diodes LD13, LD22, LD24, LD33, LD34, and LD42 are not turned on (non-light emission). And. That is, in the laser diode LDs arranged in a 4 × 4 two-dimensional manner, the predetermined laser diode LDs are lit in parallel. However, the laser diode LD is driven so that the lighting starts sequentially when the ON state of the transfer thyristor T is sequentially transferred.

FIG. 11 is a timing chart illustrating an operation of sequentially lighting the 4 × 4 laser diode LD included in the light source 22 to which the third embodiment is applied. Suppose time elapses in alphabetical order (a, b, c, ...). The times a, b, c, ... In FIG. 11 are different from the times a, b, c, ... Shown in FIGS. 6 and 8.

Here, as shown in FIG. 10, the laser diode LD is turned on (light emitting) / not lit (non-light emitting). Therefore, the setting period V (1) to V (4) (in the case of no distinction, it is referred to as the setting period V) that determines whether the laser diode LD is set to be lit or not lit is turned on. A lighting maintenance period Vc for maintaining the lighting state of the set laser diode LD in parallel is provided.

From time a to time f, the set period V (1) for the laser diodes LD11, LD21, LD31, L41, and from time f to time k, the set period V (2) for the laser diodes LD12, LD22, LD32, L42, From time k to time p, the setting period V (3) for the laser diodes LD13, LD23, LD33, L43 is used, and from time p to time u, the setting period V (4) for the laser diodes LD14, LD24, LD34, L44 is used. be. Then, from time u to time v, there is a lighting maintenance period Vc for maintaining the laser diode LD set to be lit in parallel in the lit state. In FIG. 10, the set period V is described to be longer than the lighting maintenance period Vc, but it is preferable that the lighting maintenance period Vc is set longer than the set period V. Compared with the case where the set period V is longer than the lighting maintenance period Vc, the difference in the amount of light emission depending on the light emission order is reduced among the plurality of laser diode LDs.

Since the setting periods V (1) to V (4) are basically the same, the setting period V (1) will be mainly described.
The lighting signals φI1, φI2, φI3, and φI4 are four, “H” (0V), “L1” (-3.1V), “L2” (-2.5V), and “L3” (-3.5V). It is a signal having an electric potential. The lighting signal φI1 is “H” (0V) at the time a of the set period V (1), and shifts to “L1” (-3.1V) between the time a and the time b. Then, at the time f when the set period V (1) ends and the set period V (2) starts, the process shifts to “L2” (−2.5 V). Then, at the time u when the set period V (4) ends and the lighting maintenance period Vc starts, the process shifts to “L3” (−3.5V). Then, it returns to "H" (0V) at the time v at which the lighting maintenance period Vc ends. The same applies to the other lighting signals φI2, φI3, and φI4.

When the lighting signal φI1 is “L1” (-3.1V) and the setting signal φs shifts from “H” to “L” at time b when the transfer thyristor T1 is in the ON state, the setting thyristor S1 turns on. Turns on. Then, as described above, the threshold voltage of the drive thyristor DT11 becomes −3.0 V. Therefore, the drive thyristor DT11 turns on. Since the voltage between the anode and the cathode of the drive thyristor DT11 in the ON state becomes 0.8V, 2.3V is applied to the laser diode LD11. Since the rising voltage of the laser diode LD11 is 1.5V, the laser diode LD11 also lights up (lights up).

Similarly, when the lighting signal φI1 is “L1” (-3.1V) and the setting signal φs shifts from “H” to “L” at the time c when the transfer thyristor T2 is in the ON state, the setting thyristor S1 changes. Turn on and turn on. Then, the threshold voltage of the drive thyristor DT21 becomes −3.0V. Therefore, the drive thyristor DT21 turns on and the laser diode LD21 lights up (lights up). The same applies to the other laser diodes LD31 and LD41. That is, at time f, the laser diodes LD11 to LD41 are lit. At this time, the lighting signal φI1 shifts from “L1” (-3.1V) to “L2” (−2.5V). However, if the cathode of the drive thyristor DT11 is -2.3 V, the on state is maintained. Therefore, the lighting of the laser diodes LD11 to LD41 is maintained until the time u. Then, at time u, when the lighting signal φI1 shifts from “L2” (-2.5V) to “L3” (-3.5V), the light emission of the lit laser diodes LD11 to LD41 becomes brighter (the amount of light is increased). improves).

Then, at time v, when the lighting signal φI1 returns from “L3” (−3.5V) to “H” (0V), the lit laser diodes LD11 to LD41 are turned off and turned off (non-lighting). Become.

The same applies to the other laser diode LDij. That is, during the set period V (1), V (2), V (3), and V (4), the laser diode LD is turned on and the lighting is maintained. Then, in the lighting maintenance period Vc, the light emission of the lit laser diode LD is brightened (the amount of light is improved). In this way, the lighting of the laser diode LD is started in order. The light source 22 is configured as a self-scanning light emitting element array.
Since the operation of the light source 21 not described here is the same as the operation of the light source 20 described in the first embodiment, the description thereof will be omitted.

(All simultaneous lighting operation of the light source 22 in the light emitting device 4B)
The operation of simultaneously lighting all the laser diode LDs in the light source 22 in parallel will be described.
In order to light the laser diode LD, the drive thyristor DT may turn on with the lighting signal φI. Therefore, in the all simultaneous lighting operation, the drive thyristor DT connected to the laser diode LD is turned on by the lighting signal φI.

In the sequential lighting operation of the light emitting device 4B, the power potential Vgk supplied by the power potential supply unit 170 of the control unit 112 was set to “L” (-3.3V). In the all simultaneous lighting operation, the reference potential Vsub supplied by the reference potential supply unit 160 of the control unit 112 and the power potential Vgk supplied by the power potential supply unit 170 are set to “H” (0V). Then, the lighting signals φI1 to φI4 generated by the lighting signal generating unit 140 are set to “L1” (-3.2V) or “L3” (−3.5V).

When the power supply potential Vgk is set to "H" (0V), the gate Gd of the drive thyristor DT connected to the power supply potential line 71 of "H" (0V) via the power supply line resistors Rg and the connection diodes Da and Db It becomes "H" (0V), and the threshold voltage of the drive thyristor DT becomes -1.5V. Therefore, when the lighting signals φI1 to φI4 become “L1” (-3.2V) or “L3” (−3.5V), the drive thyristor DT turns on and the laser diode LD lights up. That is, all the laser diode LDs are turned on in parallel at the same time. This state is not affected by the potentials of other signals (transfer signals φ1, φ2, setting signals φs, simultaneous lighting signals φg1, φg2). Therefore, it is not necessary to set the potentials of other terminals (φ1 terminal, φ2 terminal, φs terminal, φg1 terminal, φg2 terminal). That is, the other terminals (φ1 terminal, φ2 terminal, φs terminal, φg1 terminal, φg2 terminal) may be open.

(Partial simultaneous lighting operation of the light source 21 in the light emitting device 4B)
In the light source 22, a partial simultaneous lighting operation of lighting a plurality of laser diode LDs in a set of a part of the laser diode LDs will be described.
In order to light the laser diode LD, the drive thyristor DT may turn on with the lighting signal φI. Therefore, in the partial simultaneous lighting operation, the drive thyristor DT connected to the paired laser diode LD is turned on by the lighting signal φI.

For example, when the laser diodes LD11 and LD21 are paired and turned on in parallel at the same time, the reference potential supply unit 160 of the control unit 112 sets the reference potential Vsub to “H” (0V). Then, the simultaneous lighting signal φg1 (simultaneous lighting signal φg1 supplied to the anodes of the simultaneous lighting diodes Dg1 and Dg2) of the simultaneous lighting signal generation unit 190 is set to “H” (0V), and the lighting signal of the lighting signal generation unit 140 is set. Set φI1 to “L1” (-3.2V) or “L3” (-3.5V). That is, when the simultaneous lighting signal φg1 is set to “H” (0V), the threshold voltages of the drive thyristors DT11 and DT21 become −3.0V. Since the lighting signal φI1 is “L1” (-3.2V) or “L3” (−3.5V), the drive thyristors DT and DT2 are turned on, and the laser diodes LD11 and 21 are lit. If the lighting signals φI2, φI3, and φI4 are set to “L1” (-3.2V) or “L3” (-3.5V), the laser diodes LD12, LD22, LD13, LD23, LD14, and LD24 are also lit. .. In this way, by combining the lighting signal φI and the simultaneous lighting signal φg, the set of the laser diode LD to be lit is changed.

In FIG. 9, the anodes of the simultaneous lighting diodes Dg1 and Dg2 are connected by wiring, and the anodes of the simultaneous lighting diodes Dg3 and Dg4 are connected by wiring and connected to the simultaneous lighting signal generation unit 190 of the control unit 112. However, the anodes of the respective simultaneous lighting diodes Dg may be connected to the simultaneous lighting signal generation unit 190, and the simultaneous lighting signal generation unit 190 may select the laser diode LD to be paired by combining the simultaneous lighting diodes Dg. ..

Further, when the partial simultaneous lighting operation is not performed and the sequential lighting operation and the all simultaneous lighting operation are performed, the simultaneous lighting diode Dg may not be provided. Then, the control unit 112 does not have to include the simultaneous lighting signal generation unit 190.

[Fourth Embodiment]
In the light emitting device 4B to which the third embodiment is applied, a transfer thyristor is provided along one side of the light emitting elements arranged in a two-dimensional manner, and the on state is self-scanned. In the light emitting device 4C to which the fourth embodiment is applied, a transfer thyristor is provided along two sides of the light emitting elements arranged in a two-dimensional shape, and the on state is transferred along the two sides.

FIG. 12 is an equivalent circuit of the light source 23 to which the fourth embodiment is applied. Note that FIG. 7 also shows the control unit 113. Here, on the paper of FIG. 12, the direction from right to left is referred to as a horizontal direction (hereinafter, referred to as h direction), and the direction from top to bottom is referred to as a vertical direction (hereinafter, referred to as v direction). ). The two-dimensional shape means that there are two dimensions, and that it extends in the horizontal direction and the vertical direction. Here, the h direction and the v direction are orthogonal to each other, but they do not have to be orthogonal to each other.

The light source 23 includes an h-direction transfer unit 105, a v-direction transfer unit 106, and a plurality of laser diodes LD. The laser diode LD is an example of a light emitting element, for example, a vertical cavity surface emitting laser (VCSEL).
The light source 23 has a row in which the laser diodes LD11, LD12, LD13, and LD14 are arranged in the h direction, a row in which the laser diodes LD21, LD22, LD23, and LD24 are arranged, and a row in which the laser diodes LD31, LD32, LD33, and LD34 are arranged. The row comprises a row in which the laser diodes LD41, LD42, LD43, LD44 are arranged. These rows are arranged in this order in the v direction. That is, a row in which the laser diodes LD11, LD21, LD31, and LD41 are arranged in the v direction, a row in which the laser diodes LD12, LD22, LD32, and L42 are arranged, a row in which the laser diodes LD13, LD23, LD33, and LD43 are arranged. It has a row in which the laser diodes LD14, LD24, LD34, and LD44 are arranged.

As described above, when distinguishing each laser diode LD, a two-digit number such as "LD11" is added. In some cases, "i" is added instead of the number in the h direction and "j" is added instead of the number in the v direction to indicate "LDji". The same applies to other cases, but when a number is attached only in the h direction, "i" is attached instead of an individual number, and when a number is attached only in the v direction, "j" is attached instead of an individual number. May be added. Here, i and j are integers of 1 to 4.

The light source 23 further includes 16 drive thyristors B and 16 drive thyristors U. Each drive thyristor B, U is connected to each laser diode LD. Here, each laser diode LD and each drive thyristor B, U are connected in series so that the laser diode LD, the drive thyristor B, and the drive thyristor U are in this order. That is, the laser diode LD, the drive thyristor B, and the drive thyristor U form a set. Therefore, the drive thyristors B and U are assigned the same numbers as the connected laser diode LD to distinguish them from each other. The laser diode LD and the drive thyristors B and U are laminated in series with each other via a tunnel junction layer, similarly to the light emitting diode LED and the drive thyristor B of the first embodiment. It may be connected.

The h-direction transfer unit 105 includes four transfer thyristors Th, four coupling diodes Dh, four connection diodes Da, and four resistors Rh. Further, the h-direction transfer unit 105 includes a start diode Dhs.

The transfer thyristors Th are arranged in the h direction in the order of transfer thyristors Th1, Th2, Th3, Th4. The coupling diodes Dh are arranged in the order of the coupling diodes Dh1, Dh2, Dh3, and Dh4 in the h direction. The coupling diodes Dh1, Dh2, and Dh3 are provided between the transfer thyristors Th1, Th2, Th3, and Th4, and the coupling diode Dh4 is provided on the side opposite to the side where the coupling diode Dh3 of the transfer thyristor Th4 is provided. ing. The connection diode Da and the resistor Rh are also arranged in the h direction in the same manner.
Since the transfer thyristor Th, the coupling diode Dh, the connection diode Da, and the resistor Rh are arranged in the h direction, a single digit number is added. In addition, "i" may be added instead of individual numbers.

The v-direction transfer unit 106 includes four transfer thyristors Tv, four coupling diodes Dv, four setting thyristors S, four connection diodes Db, four connection resistors Rc, and four. It has a resistor Rv. Further, the v-direction transfer unit 106 includes a start diode Dvs.

The transfer thyristors Tv are arranged in the order of transfer thyristors Tv1, Tv2, Tv3, and Tv4 in the v direction. The coupling diodes Dv are arranged in the order of the coupling diodes Dv1, Dv2, Dv3, and Dv4 in the v direction. The coupling diodes Dv1, Dv2, and Dv3 are provided between the transfer thyristors Tv1, Tv2, Tv3, and Tv4, and the coupling diode Dv4 is provided on the side opposite to the side where the coupling diode Dv3 of the transfer thyristor Tv4 is provided. ing.
The setting thyristors S are arranged in the order of the setting thyristors S1, S2, S3, and S4 in the v direction.
The connection diode Db, the connection resistor Rc, and the resistor Rv are also arranged in the v direction in the same manner.
Since the transfer thyristor Tv, the coupling diode Dv, the setting thyristor S, the connection diode Db, the connection resistor Rc and the resistor Rv are arranged in the v direction, a single digit number is added. In addition, "j" may be added instead of adding individual numbers.

Further, the light source 23 includes four simultaneous lighting diodes Dgh and four simultaneous lighting diodes Dgv. Since the simultaneous lighting diodes Dgh are arranged in the h direction, a single digit number is added. In addition, "i" may be added instead of individual numbers. Since the simultaneous lighting diodes Dgv are arranged in the v direction, a single digit number is added. In addition, "j" may be added instead of adding individual numbers.

The laser diode LD, the coupling diodes Dh and Dv, the connection diodes Da and Db, and the simultaneous lighting diodes Dgh and Dgv are two-terminal elements including an anode and a cathode.
The transfer thyristor Th, Tv, the setting thyristor S, and the drive thyristor U, B are three-terminal elements including an anode, a cathode, and a gate.

The laser diode LDji, the drive thyristor Bji, and the drive thyristor Uji form a series-connected set. That is, the anode of the laser diode LDji is connected to the reference potential Vsub, and the cathode of the laser diode LDji is connected to the anode of the drive thyristor Bji. The cathode of the drive thyristor Bji is connected to the anode of the drive thyristor Uji. The cathode of the drive thyristor Uji is connected to a lighting signal line 54 to which a lighting signal Von that supplies a current for light emission to the laser diode LDji is supplied.

That is, in all the sets of the laser diode LDji, the drive thyristor Bji, and the drive thyristor Uji connected in series, the anode of the laser diode LDji is connected in parallel to the reference potential Vsub, and the cathode of the drive thyristor Uji is connected in parallel to the lighting signal line 54. There is.

In the h-direction transfer unit 105, the anode of the transfer thyristor Thi is connected to the reference potential Vsub. The cathodes of the odd-numbered transfer thyristors Th1 and Th3 are connected to the transfer signal line 52. A transfer signal φh1 is supplied from the control unit 113 to the transfer signal line 52. The cathodes of the even-numbered transfer thyristors Th2 and Th4 are connected to the transfer signal line 53. A transfer signal φh2 is supplied from the control unit 113 to the transfer signal line 53.

The coupling diode Dhi is connected in series. That is, the cathode of one coupling diode Dh is connected to the anode of the coupling diode Dh adjacent in the + h direction. Then, the anode of the coupling diode Dhi is connected to the gate of the transfer thyristor Thi. Further, the gate of the transfer thyristor Thi is connected to the power potential line 51 to which the h-direction power potential Vgk1 is supplied to the h-direction transfer unit 105 via the resistor Rhi.
In the start diode Dhs, the anode is connected to the transfer signal line 53 to which the transfer signal φh2 is supplied, and the cathode is connected to the anode of the coupling diode Dh1.

The anode of the connection diode Dai is connected to the gate of the transfer thyristor Thi, and the cathode is connected in parallel to the gate of the drive thyristor Uji. That is, the cathode of the connection diode Da1 is connected in parallel to the gate of the drive thyristor Uj1 via the h gate signal line 55. The cathode of the connection diode Da2 is connected in parallel to the gate of the drive thyristor Uj2 via the h gate signal line 56. The cathode of the connection diode Da3 is connected in parallel to the gate of the drive thyristor Uj3 via the h gate signal line 57. The cathode of the connection diode Da4 is connected in parallel to the gate of the drive thyristor Uj4 via the h gate signal line 58. When the h-gate signal lines 55 to 58 are not distinguished from each other, they are referred to as h-gate signal lines.

In the v-direction transfer unit 106, the anode of the transfer thyristor Tvj is connected to the reference potential Vsub. The cathodes of the odd-numbered transfer thyristors Tv1 and Tv3 are connected to the transfer signal line 62. A transfer signal φv1 is supplied from the control unit 113 to the transfer signal line 62. The cathodes of the even-numbered transfer thyristors Tv2 and Tv4 are connected to the transfer signal line 63. A transfer signal φv2 is supplied from the control unit 113 to the transfer signal line 63.

The coupling diode Dvj is connected in series. That is, the cathode of one coupling diode Dv is connected to the anode of the coupling diode Dv adjacent in the + v direction. Then, the anode of the coupling diode Dvj is connected to the gate of the transfer thyristor Tvj. Further, the gate of the transfer thyristor Tvj is connected to the power supply potential line 61 to which the v-direction power supply potential Vgk2 is supplied to the v-direction transfer unit 106 via the resistor Rvj.
In the start diode Dvs, the anode is connected to the transfer signal line 63 to which the transfer signal φv2 is supplied, and the cathode is connected to the anode of the coupling diode Dv1.

In the setting thyristor Sj, the anode is connected to the reference potential Vsub, and the cathode is connected to the setting signal line 64 to which the setting signal φs is supplied from the control unit 113. The anode of the connection diode Dbj is connected to the gate of the transfer thyristor Tvj, and the cathode is connected to the gate of the setting thyristor Sj. Further, one of the connection resistors Rcj is connected to the gate of the setting thyristor Sj, and the other is connected in parallel to the gate of the driving thyristor Bji. That is, the connection diode Db1 is connected to the drive thyristor B1i via the connection resistor Rc1 and the v-gate signal line 65. The connection diode Db2 is connected to the drive thyristor B2i via the connection resistor Rc2 and the v-gate signal line 66. The connection diode Db3 is connected to the drive thyristor B3i via the connection resistor Rc3 and the v-gate signal line 67. The connection diode Db4 is connected to the drive thyristor B4i via the connection resistor Rc4 and the v-gate signal line 68. When the v-gate signal lines 65 to 56 are not distinguished from each other, they are referred to as v-gate signal lines.

The cathode of the simultaneous lighting diode Dgh1 is connected to the h-gate signal line 55. The cathode of the simultaneous lighting diode Dgh2 is connected to the h-gate signal line 56. The anodes of the simultaneous lighting diodes Dgh1 and Dgh2 are connected to the φgh1 terminal. The simultaneous lighting signal φgh1 is supplied to the φgh1 terminal from the simultaneous lighting signal generation unit 190 of the control unit 113. The cathode of the simultaneous lighting diode Dgh3 is connected to the h-gate signal line 57. The cathode of the simultaneous lighting diode Dgh4 is connected to the h-gate signal line 58. The anodes of the simultaneous lighting diodes Dgh3 and Dgh4 are connected to the φgh2 terminal. The simultaneous lighting signal φgh2 is supplied to the φgh2 terminal from the simultaneous lighting signal generation unit 190 of the control unit 113.

The h-gate signal lines 55-58 and v-gate signal lines 65-68 are examples of drive signals, and the potentials set in the h-gate signal lines 55-58 and v-gate signal lines 65-68 are examples of drive signals. Is.

The cathode of the simultaneous lighting diode Dgv1 is connected to the v-gate signal line 65. The cathode of the simultaneous lighting diode Dgv2 is connected to the v-gate signal line 66. The anodes of the simultaneous lighting diodes Dgv1 and Dgv2 are connected to the φgv1 terminal. A simultaneous lighting signal φgv1 is supplied to the φgv1 terminal from the simultaneous lighting signal generation unit 190 of the control unit 113. The cathode of the simultaneous lighting diode Dgv3 is connected to the v-gate signal line 67. The cathode of the simultaneous lighting diode Dgv4 is connected to the v-gate signal line 68. The anodes of the simultaneous lighting diodes Dgv3 and Dgv4 are connected to the φgv2 terminal. A simultaneous lighting signal φgv2 is supplied to the φgv2 terminal from the simultaneous lighting signal generation unit 190 of the control unit 113.

In the above, it is assumed that the laser diode LD is arranged in a 4 × 4 two-dimensional shape, but the laser diode LD is not limited to 4 × 4. i and j in j × i may be a plurality of numerical values other than 4. The number of transfer thyristors Th may be i, and the number of transfer thyristors Tv and set thyristors S may be j. The number of transfer thyristors Th may exceed i. The number of transfer thyristors Tv and set thyristors S may exceed j.

(Sequential lighting operation in the light emitting device 4C)
Next, the operation of sequentially emitting the laser diode LD of the light source 23 in the light emitting device 4C will be described.

First, a basic sequential lighting operation of the light source 23 will be described. Here, the case where the laser diode LD11 is turned on will be described. The power supply potentials Vgk1 and Vgk2 are "L" (-3.3V), and the reference potential Vsub is "H" (0V). At this time, it is assumed that the lighting signal Von is set to "L" (-3.3V). Then, the simultaneous lighting signals φgh1, φgh2, φgv1, and φgv2 are set to “L” (-3.3V).
To turn on the laser diode LD11, the transfer thyristor Th1 and the transfer thyristor Tv1 corresponding to the laser diode LD11 are turned on in order to turn on the laser diode LD11. When the transfer thyristor Th1 is turned on, the gate of the transfer thyristor Th1 becomes 0V, and the h gate signal line 55 becomes −1.5V via the connection diode Da1. Then, the threshold voltage of the drive thyristor U11 becomes −3.0 V. On the other hand, when the transfer thyristor Tv1 is turned on, the gate of the transfer thyristor Tv1 becomes 0V, and the gate of the setting thyristor S1 becomes −1.5V via the connection diode Db1. Then, the threshold voltage of the set thyristor S1 becomes −3.0 V.

Next, when the setting signal φs is shifted from “H” (0V) to “L ′” (−3.0V), the setting thyristor S1 turns on and the gate of the setting thyristor S1 becomes 0V. Then, the v-gate signal line 65 connected to the gate of the setting thyristor S1 via the connection resistor Rc1 becomes 0V. That is, the gate of the drive thyristor B11 becomes 0V. As a result, the cathode of the drive thyristor B11 (the anode of the drive thyristor U11) becomes −1.5 V. Then, the potential applied between the cathode and the anode of the drive thyristor U11 becomes -1.8 V, and the drive thyristor U11 turns on.

When the drive thyristor U11 is turned on and a current starts to flow in the drive thyristor U11, a current also flows between the gate and the cathode of the drive thyristor B11. Then, the gate of the drive thyristor B11 approaches −0.8 V due to the potential drop of the connection resistor Rc1. As a result, the cathode of the driving thyristor B11 (the anode of the driving thyristor U11) approaches -2.3V. At this time, since the anode of the drive thyristor B11 is connected to the cathode of the laser diode LD11, it becomes −1.5 V. That is, 0.8 V is applied between the anode and the cathode of the drive thyristor B11. As a result, the drive thyristor B11 turns on. Then, a current flows through the laser diode LD11, the drive thyristor B11, and the drive thyristor U11, and the laser diode LD11 lights up.
That is, the potential of the h-gate signal line (h-gate signal line such as the h-gate signal line 55) connected to the gate of the drive thyristor U is set to -1.5 V, and the v-gate connected to the gate of the drive thyristor B is set. When the potential of the signal line (v-gate signal line such as v-gate signal line 65) is set to 0 V, the drive thyristors U and B can be turned on. When the lighting signal Von is "L" (-3.3V), the drive thyristors U and B are turned on, and the laser diode LD is lit (light emitting). That is, the drive thyristors U and B are driven so that the laser diode LD is turned on when the drive thyristors U and B are turned on.

As described above, the transfer thyristor Thi is turned on in order, and the transfer thyristor Tvj is turned on in order. Then, the laser diode LDji specified by the on-state transfer thyristor Thi and the on-state transfer thyristor Tvj is turned on. The light source 23 is configured as a self-scanning light emitting element array.

FIG. 13 is a diagram showing an example of setting lighting / non-lighting of the laser diode LD in the light source 23 including the 4 × 4 laser diode LD to which the fourth embodiment is applied. Here, the laser diode LD that is lit (light-emitting) is indicated by "◯", and the laser diode LD that is not lit (non-emission) is indicated by "x". That is, the laser diodes LD11, LD12, LD14, LD21, LD23, LD32, LD34, LD41, LD42, and LD44 are turned on (light emission), and the laser diodes LD13, LD22, LD24, LD31, LD33, and LD43 are not turned on (non-light emission). And. That is, in the laser diode LDs arranged in a 4 × 4 two-dimensional manner, the predetermined laser diode LDs are lit in parallel.

FIG. 14 is a timing chart illustrating an operation of sequentially lighting the 4 × 4 laser diode LD included in the light source 23 to which the fourth embodiment is applied. Suppose time elapses in alphabetical order (a, b, c, ...). The times a, b, c, ... In FIG. 14 are different from the times a, b, c, ... Shown in FIGS. 6, 8, and 11.

Here, it is assumed that the laser diode LD is set to be lit (light emitting) / non-lit (non-light emitting) as shown in FIG. The set period P (1) to P (4) for setting the laser diode LD to be lit or not lit (indicated as the set period P if no distinction is made) and the laser diode LD to be lit that is set to be lit. A lighting maintenance period Pc for maintaining the lighting state in parallel is provided.

From time a to time f, the setting period P (1) for the laser diodes LD11, LD21, LD31, L41, and from time f to time k, the setting period P (2) for the laser diodes LD12, LD22, LD32, L42, From time k to time p, the setting period P (3) for the laser diodes LD13, LD23, LD33, LD43, and from time p to time u, the setting period P (4) for the laser diodes LD14, LD24, LD34, L44. be. Then, from time u to time v, there is a lighting maintenance period Pc for maintaining the laser diode LD to be lit, which is set to be lit, in the lit state in parallel. That is, in the set periods P (1) to P (4), when the lighting of the laser diode LD to be lit is completed, the lighting maintenance period Pc for maintaining the laser diode LD to be lit in parallel in the lit state starts. ..

In FIG. 14, the set period P is shown to be longer than the lighting maintenance period Pc, but it is preferable that the lighting maintenance period Pc is set longer than the set period P. Compared with the case where the set period P, which is an example of the first period, is longer than the lighting maintenance period Pc, the difference in the amount of light emission depending on the light emission order among the plurality of laser diode LDs is reduced.

Since the setting periods P (1) to P (4) are basically the same, the setting period P (1) will be mainly described.
Here, the reference potential Vsub is “H” (0V), the h-direction power supply potential Vgk1 and the v-direction power supply potential Vgk2 are “L” (-3.3V). The lighting signal Von shifts between "H" (0V) and "L" (-3.3V). The setting signal φs shifts between “H” (0V) and “L ′” (−3.0V). The transfer signals φh1 and φh2 and the transfer signals φv1 and φv2 are the same as the transfer signals φ1 and φ2 in the first embodiment.

At time a, the lighting signal Von shifts from "H" (0V) to "L" (-3.3V).
At time a1 between time a and time b, the transfer thyristor Th1 shifts from the off state to the on state. Then, at the time a2 between the time a1 and the time b, the transfer thyristor Tv1 shifts from the off state to the on state.
At time b, the setting signal φs shifts from “H” (0V) to “L ′” (−3.0V). As a result, the setting thyristor S1 shifts from the off state to the on state. Then, as described above, the laser diode LD11 lights up.

At time b1 between time b and time c, the setting signal φs shifts from “L ′” (−3.0V) to “H” (0V). Then, the setting thyristor S1 shifts from the on state to the off state, but since the lighting signal Von is “L” (-3.3V), the laser diode LD11 maintains the on state.

In this way, in the setting period P from the time a to the time u, the laser diode LD is set to the lighting / non-lighting state according to FIG. Then, during the lighting maintenance period Pc from the time u to the time v, the lighting state of the lit laser diode LD is maintained. That is, during the lighting maintenance period Pc, the laser diode LD set in the lighting state is lit in parallel.

Since the operation of the light source 21 not described here is the same as the operation of the light source 20 described in the first embodiment, the description thereof will be omitted.

(All simultaneous lighting operation of the light source 23 in the light emitting device 4C)
The operation of simultaneously lighting all the laser diode LDs in the light source 23 in parallel will be described.
In order to light the laser diode LD, the gate of the drive thyristor U is set to -1.5 V, and the cathode of the drive thyristor B (the anode of the drive thyristor U) is set to -1.5 V. The lighting signal Von may be set to "L" (-3.3V).
Therefore, the reference potential Vsub is set to "H" (0V) by the reference potential supply unit 160 of the control unit 113. Then, the power supply potential supply units 170 and 180 of the control unit 113 set the power supply potentials Vgk1 and Vgk2 to "H" (0V). After that, the setting signal generation unit 180 of the control unit 113 sets the setting signal φs to “L” (-3.3V). By doing so, the setting thyristor S is turned on, and the gate of the drive thyristor B becomes 0V via the connection resistor Rc. As a result, the cathode of the drive thyristor B (the anode of the drive thyristor U) becomes −1.5 V. After that, when the lighting signal Von is set from "H" (0V) to "L" (-3.3V), the drive thyristor U turns on and turns on. Then, a current flows through the laser diode LD, the drive thyristor B, and the drive thyristor U, and the laser diode LD lights up. That is, all the laser diode LDs are turned on in parallel at the same time. This state is not affected by the potentials of other signals (transfer signals φh1, φh2, φv1, φv2, simultaneous lighting signals φg1, φg2). Therefore, it is not necessary to set the potential to other terminals (φh1 terminal, φh2 terminal, φv1 terminal, φv2 terminal, φg1 terminal, φg2 terminal). That is, the other terminals (φh1 terminal, φh2 terminal, φv1 terminal, φv2 terminal, φg1 terminal, φg2 terminal) may be open.

(Partial simultaneous lighting operation of the light source 23 in the light emitting device 4C)
In the light source 23, a partial simultaneous lighting operation of lighting a plurality of laser diode LDs in a set of a part of the laser diode LDs will be described.
In order to light the laser diode LD, the gate of the drive thyristor U is set to -1.5 V, and the cathode of the drive thyristor B (the anode of the drive thyristor U) is set to -1.5 V. The lighting signal Von may be set to "L" (-3.3V).

For example, when the laser diodes LD11, LD21, LD12, and LD22 are to be turned on in parallel at the same time, the reference potential Vsub is set to "H" (0V) by the reference potential supply unit 160 of the control unit 113. Then, the simultaneous lighting signal φgh1 (simultaneous lighting signal φgh1 supplied to the anodes of the simultaneous lighting diodes Dgh1 and Dgh2) of the simultaneous lighting signal generation unit 190 is set to −1.5V, and the simultaneous lighting signal of the simultaneous lighting signal generation unit 190 is set. φgv1 (simultaneous lighting signal φgv1 supplied to the anodes of the simultaneous lighting diodes Dgv1 and Dgv2) is set to 0V. After that, the lighting signal Von is set to "L" (-3.3V) by the lighting signal generation unit 140 of the control unit 113.

When the simultaneous lighting signal φgh1 is set to −1.5V, the h gate signal line 55 connected to the cathode of the simultaneous lighting diode Dgh1 becomes −1.5V. That is, the gates of the drive thyristors U11 and U21 become −1.5 V. Similarly, the h gate signal line 56 connected to the cathode of the simultaneous lighting diode Dgh2 becomes −1.5V. That is, the gates of the drive thyristors U12 and U22 become −1.5 V.
When the simultaneous lighting signal φgv1 is set to 0V, the v-gate signal line 65 connected to the cathode of the simultaneous lighting diode Dgv1 becomes 0V. That is, the gates of the drive thyristors B11 and B21 become 0V. Similarly, the v-gate signal line 66 connected to the cathode of the simultaneous lighting diode Dgv2 becomes 0V. That is, the gates of the drive thyristors B12 and B22 become −1.5 V. After that, when the lighting signal Von is set to "L" (-3.3V), the laser diodes LD11, LD21, LD12, and LD22 are simultaneously lit in parallel as described above. In this way, by combining the simultaneous lighting signal φgh and the simultaneous lighting signal φgv, the set of the laser diode LD to be lit can be changed and lit.

In FIG. 12, the anodes of the simultaneous lighting diodes Dgh1 and Dgh2 are connected by wiring, and the simultaneous lighting signal generation unit 190 of the control unit 113 is connected to the simultaneous lighting signal φgh1. Similarly, the anodes of the simultaneous lighting diodes Dgh3 and Dgh4 were connected by wiring, and the simultaneous lighting signal generation unit 190 was connected to the simultaneous lighting signal φgh2. Further, the anodes of the simultaneous lighting diodes Dgv1 and Dgv2 were connected by wiring, and the simultaneous lighting signal generation unit 190 was connected to the simultaneous lighting signal φgv1. Similarly, the anodes of the simultaneous lighting diodes Dgv3 and Dgv4 were connected by wiring, and the simultaneous lighting signal generation unit 190 was connected to the simultaneous lighting signal φgv2. This combination may be changed according to the laser diode LD to be turned on at the same time.
Further, the anodes of the simultaneous lighting diodes Dgh and Dgv are connected to the simultaneous lighting signal generation unit 190 of the control unit 113, and the simultaneous lighting signal generation unit 190 sets a combination of the simultaneous lighting diodes Dgh and Dgv to form a set. The laser diode LD to be used may be selected.

Further, when the partial simultaneous lighting operation is not performed and the sequential lighting operation and the all simultaneous lighting operation are performed, the simultaneous lighting diodes Dgh and Dgv may not be provided. Then, the control unit 113 does not have to include the simultaneous lighting signal generation unit 190.

The potentials described in the first to fourth embodiments are examples, and may be changed depending on the configuration and characteristics of the device.

Further, a light emitting device 4 to which the first embodiment is applied, a light emitting device 4A to which the second embodiment is applied, a light emitting device 4B to which the third embodiment is applied, and a fourth embodiment. In the light emitting device 4C to which the above is applied, a light diffusing member 30 is used, which changes the spreading angle of the incident light by diffusion so as to widen the light emitting device 30 and emits the light. Instead of the light diffusing member 30, a diffractive member such as a diffractive optical element (DOE) that changes the direction of the incident light and emits the light may be used.

1 ... Information processing device, 2 ... User interface unit (UI unit), 3 ... Optical device, 4, 4A, 4B, 4C ... Light emitting device, 5 ... 3D sensor, 6 ... Measuring device, 8 ... Measurement control unit, 9 ... System control unit, 10 ... circuit board, 20, 21, 22, 23 ... light source, 30 ... light diffusing member, 40 ... holding unit, 51, 61, 71 ... power supply potential line, 52, 53, 62, 63, 72, 73 ... transfer signal line, 54 ... lighting signal line, 55, 56, 57, 58 ... gate signal line, h gate signal line, 64, 75 ... setting signal line, 65, 66, 67, 68 ... v gate signal line, 74 ... lighting signal line, 80 ... substrate, 81 ... three-dimensional shape specifying unit, 91 ... authentication processing unit, 101, 102, 103, 104 ... light emitting element unit, 105 ... h direction transfer unit, 106 ... v direction transfer unit, 120 ... Transfer signal generator, 140 ... Lighting signal generator, 160 ... Reference potential supply unit, 170 ... Power supply potential supply unit, 180 ... Setting signal generator, 190 ... Simultaneous lighting signal generator, φ1, φ2, φh1, φh2 , Φv1, φv2 ... Transfer signal, φI, Von ... Lighting signal, φg, φgh, φgv ... Simultaneous lighting signal, B, DT, U ... Drive thyristor, D, Dh, Dv ... Coupled diode, Dg, Dgh, Dgv ... Simultaneous Lighting diode, Dhs, Dvs, SD ... Start diode, L ... Light emitting cylister, LD ... Laser diode, LED ... Light emitting diode, S ... Setting thyristor, T, Th, Tv ... Transfer thyristor

Claims (11)

A light source having a plurality of light emitting elements and a plurality of driving elements provided corresponding to the plurality of the light emitting elements and driving the light emitting elements to light up when the light emitting elements are turned on.
It is provided with a control unit that switches and controls a sequential lighting operation in which a plurality of the light emitting elements are sequentially lit and a simultaneous lighting operation in which the plurality of light emitting elements are simultaneously lit in parallel.
The light source is
The power line set to the reference potential or power potential, and
A drive signal line connected to the power supply line and supplying a drive signal to the drive element,
It has a lighting signal line that supplies a lighting signal for lighting to the plurality of light emitting elements, and has.
The control unit
In the sequential lighting operation, the power supply line is set to the power potential, the drive element is turned on by the drive signal and the lighting signal, and the light emitting element corresponding to the drive element is sequentially lit.
In the simultaneous lighting operation, the power supply line is set to a reference potential, the plurality of driving elements are turned on by the driving signal and the lighting signal, and the plurality of light emitting elements are simultaneously lit in parallel. A light emitting device characterized in that. The driving element is a driving thyristor.
The light emitting device according to claim 1, wherein the drive signal is a signal supplied to the gate of the drive thyristor and enabling the drive thyristor to shift to an on state. The light emitting element and the driving element are light emitting thyristors in which the light emitting element and the driving element are integrated.
The light emitting device according to claim 1, wherein the drive signal is a signal supplied to the gate of the light emitting thyristor and enabling the light emitting thyristor to shift to an on state. The plurality of light emitting elements included in the light source are arranged in a two-dimensional manner, and the number of the driving elements provided corresponding to the light emitting elements is two.
The light emitting device according to claim 1, wherein the control unit turns on two of the driving elements in the simultaneous lighting operation. A plurality of light emitting elements, a plurality of drive elements provided corresponding to the plurality of the light emitting elements, and lighting the light emitting elements when turned on, and a drive element corresponding to the light emitting elements that are simultaneously turned on in parallel. With a connected simultaneous lighting diode, and with a light source,
It is provided with a control unit that switches and controls a sequential lighting operation in which a plurality of the light emitting elements are sequentially lit and a simultaneous lighting operation in which the light emitting elements are lit in parallel at the same time.
The light source is
The power line set to the reference potential or power potential, and
One is connected to the power supply line to supply a drive signal to the drive element, and the other is a drive signal line connected to the simultaneous lighting diode.
It has a lighting signal line that supplies a lighting signal for lighting to the plurality of light emitting elements, and has.
The control unit
In the sequential lighting operation, the power supply line is set to the power potential, and the corresponding light emitting elements are sequentially lit by the drive signal and the lighting signal.
In the simultaneous lighting operation, the power supply line is set to the reference potential, the driving element is turned on via the simultaneous lighting diode, and the light emitting element is simultaneously lit by the lighting signal. A characteristic light emitting device. The light emitting device according to claim 5, wherein the simultaneous lighting diodes are connected so as to have a reverse bias in the sequential lighting operation and a forward bias in the simultaneous lighting operation. The light emitting device according to any one of claims 1 to 6, further comprising a diffusing member that diffuses and emits light emitted from the light source. The light emitting device according to any one of claims 1 to 6, further comprising a diffracting member that diffracts and emits light emitted from the light source. The light emitting device according to any one of claims 1 to 8.
A light receiving unit that receives the reflected light emitted from the light source included in the light emitting device and reflected by the object to be measured.
An optical device equipped with. The optical device according to claim 9,
A distance specifying unit that specifies the distance to the object to be measured based on the time from when the optical device emits light from the light source to when the light is received by the light receiving unit.
A measuring device equipped with. The measuring device according to claim 10 and
An authentication processing unit that performs authentication processing related to the use of the own device based on the specific result of the distance specifying unit provided in the measuring device.
Information processing device equipped with.

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