JP2021039243A - Exposure device and manufacturing method of articles - Google Patents
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- JP2021039243A JP2021039243A JP2019160663A JP2019160663A JP2021039243A JP 2021039243 A JP2021039243 A JP 2021039243A JP 2019160663 A JP2019160663 A JP 2019160663A JP 2019160663 A JP2019160663 A JP 2019160663A JP 2021039243 A JP2021039243 A JP 2021039243A
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- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 230000003287 optical effect Effects 0.000 claims abstract description 87
- 238000005286 illumination Methods 0.000 claims abstract description 39
- 238000009826 distribution Methods 0.000 claims abstract description 34
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 230000004907 flux Effects 0.000 claims abstract description 11
- 230000009471 action Effects 0.000 claims abstract description 3
- 230000000873 masking effect Effects 0.000 claims description 9
- 238000012937 correction Methods 0.000 abstract description 3
- 230000010354 integration Effects 0.000 abstract description 3
- 230000006866 deterioration Effects 0.000 abstract 1
- 230000005764 inhibitory process Effects 0.000 abstract 1
- 210000001747 pupil Anatomy 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 238000004321 preservation Methods 0.000 description 4
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000009828 non-uniform distribution Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/7015—Details of optical elements
- G03F7/70158—Diffractive optical elements
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Control Of Vending Devices And Auxiliary Devices For Vending Devices (AREA)
- Developing Agents For Electrophotography (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
本発明は、露光装置、および、物品の製造方法に関する。 The present invention relates to an exposure apparatus and a method for manufacturing an article.
半導体デバイスの微細化に伴い、半導体デバイスの製造工程であるリソグラフィ工程で使用される露光装置にはさらなる高解像度化が求められている。高解像度を達成するためには、露光光の短波長化、投影光学系の開口数(NA)の増加(高NA化)、さらには、変形照明(輪帯照明、二重極照明、四重極照明など)の使用が有効である。 With the miniaturization of semiconductor devices, the exposure equipment used in the lithography process, which is the manufacturing process of semiconductor devices, is required to have higher resolution. In order to achieve high resolution, the wavelength of the exposure light should be shortened, the numerical aperture (NA) of the projection optical system should be increased (higher NA), and the modified illumination (ring band illumination, bipolar illumination, quadruple illumination) should be achieved. The use of polar lighting, etc.) is effective.
一方、近年のデバイス構造の多層化に伴い、露光装置は高い重ね合わせ精度も求められている。特許文献1には、被照明面の共役面であるマスキングユニット104の前後に遮光部103および遮光部105を配置した、ダブルスリット構成が開示されている(図1)。このダブルスリット構成は、重ね合わせ精度を向上させるために有効である。 On the other hand, with the recent increase in the number of layers of device structures, exposure devices are also required to have high overlay accuracy. Patent Document 1 discloses a double slit configuration in which a light-shielding portion 103 and a light-shielding portion 105 are arranged before and after the masking unit 104, which is a conjugate surface of the illuminated surface (FIG. 1). This double slit configuration is effective for improving the overlay accuracy.
また、特許文献1には、ダブルスリット構成によって生じる積算有効光源分布の非対称性を緩和するための遮光部401またはフィルタ402を配置することも開示されている(図12、図14)。 Further, Patent Document 1 also discloses that a light-shielding portion 401 or a filter 402 for alleviating the asymmetry of the integrated effective light source distribution caused by the double slit configuration is arranged (FIGS. 12 and 14).
しかし、ダブルスリット構成によって生じる積算有効光源分布の非対称性を緩和するための遮光部またはフィルタを配置する場合には、像面照度が低下してしまう。像面照度が低下することは、スループットが低下することにつながるため、好ましくない。 However, when a light-shielding portion or a filter for alleviating the asymmetry of the integrated effective light source distribution caused by the double slit configuration is arranged, the image plane illuminance is lowered. Decreasing the image plane illuminance is not preferable because it leads to a decrease in throughput.
本発明は、例えば、照明光学系の像面の照度分布の補正性能と像面照度の低下を抑制の両立に有利な露光装置を提供する。 The present invention provides, for example, an exposure apparatus that is advantageous in achieving both the correction performance of the illuminance distribution on the image plane of the illumination optical system and the suppression of the decrease in the illuminance on the image plane.
本発明の一側面によれば、基板の走査露光を行う露光装置であって、光源からの光で原版の被照明面を照明する照明光学系を有し、前記照明光学系は、所定面上に、前記光源からの光束の光強度分布を回折作用により変換する回折光学素子と、前記被照明面の共役面から前記光源側にデフォーカスした位置に配置される第1遮光部と、前記被照明面の前記共役面から前記被照明面側にデフォーカスした位置に配置される第2遮光部と、を有し、前記回折光学素子は、前記第1遮光部と前記第2遮光部とによって前記被照明面に生じる、ある一点を前記走査露光によって照明する期間における入射角度分布を積算した積算入射角度分布に関して、前記走査露光の走査方向と該走査方向と直交する非走査方向との差を低減する回折特性を有する、ことを特徴とする露光装置が提供される。 According to one aspect of the present invention, it is an exposure apparatus that scans and exposes a substrate, and has an illumination optical system that illuminates the illuminated surface of the original plate with light from a light source, and the illumination optical system is on a predetermined surface. In addition, a diffractive optical element that converts the light intensity distribution of the light beam from the light source by a diffraction action, a first light-shielding portion arranged at a position defocused from the conjugate surface of the illuminated surface to the light source side, and the subject. It has a second light-shielding portion arranged at a position defocused from the conjugate surface of the illumination surface to the illuminated surface side, and the diffractive optical element is formed by the first light-shielding portion and the second light-shielding portion. With respect to the integrated incident angle distribution that integrates the incident angle distribution during the period in which a certain point is illuminated by the scanning exposure, the difference between the scanning direction of the scanning exposure and the non-scanning direction orthogonal to the scanning direction is calculated. An exposure apparatus characterized by having reduced diffraction characteristics is provided.
本発明によれば、例えば、照明光学系の像面の照度分布の補正性能と像面照度の低下を抑制の両立に有利な露光装置を提供することができる。 According to the present invention, for example, it is possible to provide an exposure apparatus that is advantageous in achieving both the correction performance of the illuminance distribution on the image plane of the illumination optical system and the suppression of the decrease in the illuminance on the image plane.
以下、添付図面を参照して実施形態を詳しく説明する。なお、以下の実施形態は特許請求の範囲に係る発明を限定するものではない。実施形態には複数の特徴が記載されているが、これらの複数の特徴の全てが発明に必須のものとは限らず、また、複数の特徴は任意に組み合わせられてもよい。さらに、添付図面においては、同一若しくは同様の構成に同一の参照番号を付し、重複した説明は省略する。 Hereinafter, embodiments will be described in detail with reference to the accompanying drawings. The following embodiments do not limit the invention according to the claims. Although a plurality of features are described in the embodiment, not all of the plurality of features are essential to the invention, and the plurality of features may be arbitrarily combined. Further, in the attached drawings, the same or similar configurations are designated by the same reference numbers, and duplicate explanations are omitted.
<第1実施形態>
図1は、実施形態における露光装置の構成を示す概略断面図である。この露光装置は、ステップ・アンド・スキャン方式で原版(マスク)のパターンを基板に露光する走査型露光装置である。ステップ・アンド・スキャン方式では、原版と基板と相対的に駆動(スキャン)させながら1ショットの露光が行われ、1ショットの露光終了後、基板のステップ移動により次のショット領域への移動が行われる。
<First Embodiment>
FIG. 1 is a schematic cross-sectional view showing the configuration of the exposure apparatus according to the embodiment. This exposure device is a scanning exposure device that exposes a pattern of an original plate (mask) on a substrate by a step-and-scan method. In the step-and-scan method, one shot is exposed while being driven (scanned) relative to the original plate and the substrate, and after the exposure of one shot is completed, the substrate is stepped to move to the next shot area. Will be.
露光装置は、光源1からの光束を利用して原版であるレチクル24を照明する照明光学系と、レチクル24のパターンを基板27に投影する投影光学系26とを有する。 The exposure apparatus includes an illumination optical system that illuminates the reticle 24, which is the original plate, using the light flux from the light source 1, and a projection optical system 26 that projects the pattern of the reticle 24 onto the substrate 27.
光源1には、波長約365nmの水銀ランプ、波長約248nmのKrFエキシマレーザー、波長約193nmのArFエキシマレーザー等が使用されうる。 As the light source 1, a mercury lamp having a wavelength of about 365 nm, a KrF excimer laser having a wavelength of about 248 nm, an ArF excimer laser having a wavelength of about 193 nm, or the like can be used.
照明光学系は、引き回し光学系2、射出角度保存光学素子5、回折光学素子6、コンデンサレンズ7、プリズムユニット10を有する。また、照明光学系は、ズームレンズユニット11、オプティカルインテグレータ12、絞り13、コンデンサレンズ14、第1遮光部18および第2遮光部20、マスキングユニット19、コンデンサレンズ21、及び、コリメータレンズ23を更に有する。 The illumination optical system includes a routing optical system 2, an emission angle preservation optical element 5, a diffraction optical element 6, a condenser lens 7, and a prism unit 10. Further, the illumination optical system further includes a zoom lens unit 11, an optical integrator 12, an aperture 13, a condenser lens 14, a first light-shielding portion 18 and a second light-shielding portion 20, a masking unit 19, a condenser lens 21, and a collimator lens 23. Have.
引き回し光学系2は、光源1と射出角度保存光学素子5との間に設けられ、光源1からの光束を射出角度保存光学素子5に導く。射出角度保存光学素子5は、回折光学素子6の光源側に設けられ、光源1からの光束をその発散角度を一定に保ちながら回折光学素子6へ導く。射出角度保存光学素子5は、マイクロレンズアレイ、または、ファイバー束などのオプティカルインテグレータによって構成されうる。射出角度保存光学素子5によって、光源1の出力変動が回折光学素子6によって形成されるパターン分布に及ぼす影響を軽減することができる。 The routing optical system 2 is provided between the light source 1 and the emission angle conserving optical element 5, and guides the light flux from the light source 1 to the emission angle conserving optical element 5. The emission angle preservation optical element 5 is provided on the light source side of the diffractive optical element 6 and guides the light flux from the light source 1 to the diffractive optical element 6 while keeping the divergence angle constant. The injection angle conserving optical element 5 may be composed of a microlens array or an optical integrator such as a fiber bundle. The injection angle preservation optical element 5 can reduce the influence of the output fluctuation of the light source 1 on the pattern distribution formed by the diffraction optical element 6.
回折光学素子6は、被照明面(像面)であるレチクル24と共役な面または照明光学系の瞳面とフーリエ変換の関係のある面に配置される。回折光学素子6は、投影光学系26の瞳面と共役な面である照明光学系の瞳面やそれと共役な面などの所定面上に、光源1からの光束の光強度分布を回折作用により変換して所望の光強度分布を形成する。回折光学素子6には、回折パターン面に所望の回折パターンが得られるように計算機で設計された計算機ホログラム(CGH;Computer Generated Hologram)を使用してもよい。投影光学系26の瞳面に形成される光源形状は、有効光源形状と呼ばれる。なお、本明細書において、「有効光源」とは、被照明面およびその共役面上における光強度分布あるいは光の角度分布をいう。回折光学素子6は、射出角度保存光学素子5とコンデンサレンズ7との間に設けられている。射出角度保存光学素子5からの光束は、回折光学素子6を照射し、回折光学素子6で回折して、コンデンサレンズ7へ導かれる。 The diffractive optical element 6 is arranged on a surface conjugate with the reticle 24, which is an illuminated surface (image plane), or a surface having a Fourier transform relationship with the pupil surface of the illumination optical system. The diffractive optical element 6 diffracts the light intensity distribution of the light flux from the light source 1 on a predetermined surface such as the pupil surface of the illumination optical system which is a surface conjugate to the pupil surface of the projection optical system 26 and the surface conjugate to the pupil surface of the illumination optical system. Convert to form the desired light intensity distribution. As the diffraction optical element 6, a computer hologram (CGH; Computer Generated Hologram) designed by a computer so that a desired diffraction pattern can be obtained on the diffraction pattern surface may be used. The shape of the light source formed on the pupil surface of the projection optical system 26 is called an effective light source shape. In addition, in this specification, an "effective light source" means a light intensity distribution or a light angle distribution on an illuminated surface and a conjugate surface thereof. The diffractive optical element 6 is provided between the injection angle conserving optical element 5 and the condenser lens 7. The light beam from the emission angle preservation optical element 5 irradiates the diffractive optical element 6, diffracts it with the diffractive optical element 6, and is guided to the condenser lens 7.
一例において、照明光学系には回折光学素子6は複数設けられ、それぞれの回折光学素子6はターレット(不図示)の複数のスロットの対応する1つに取り付けられて搭載されている。複数の回折光学素子はそれぞれ異なる有効光源形状を形成することができる。これらの有効光源形状により、照明モードの名前が、小σ照明、大σ照明、輪帯照明、二重極照明、四重極照明などと呼ばれる。 In one example, a plurality of diffractive optical elements 6 are provided in the illumination optical system, and each diffractive optical element 6 is attached and mounted in a corresponding one of a plurality of slots of a turret (not shown). The plurality of diffractive optical elements can form different effective light source shapes. Due to these effective light source shapes, the names of the illumination modes are called small σ illumination, large σ illumination, ring zone illumination, double pole illumination, quadrupole illumination, and the like.
コンデンサレンズ7は、回折光学素子6とプリズムユニット10との間に設けられ、回折光学素子6で回折した光束を集光し、フーリエ変換面9に回折パターンを形成する。回折パターンの分布は一定である。 The condenser lens 7 is provided between the diffractive optical element 6 and the prism unit 10, collects the light beam diffracted by the diffractive optical element 6, and forms a diffraction pattern on the Fourier transform surface 9. The distribution of the diffraction pattern is constant.
フーリエ変換面9は、オプティカルインテグレータ12と回折光学素子6との間にあり、回折光学素子6と光学的にフーリエ変換の関係にある面である。光路に位置する回折光学素子6を交換すれば、フーリエ変換面9に形成される回折パターンの形状を変えることができる。 The Fourier transform surface 9 is located between the optical integrator 12 and the diffractive optical element 6, and is a surface that is optically in a Fourier transform relationship with the diffractive optical element 6. By exchanging the diffraction optical element 6 located in the optical path, the shape of the diffraction pattern formed on the Fourier transform surface 9 can be changed.
プリズムユニット10とズームレンズユニット11は、オプティカルインテグレータ12に対して光源側に設けられ、フーリエ変換面9に形成された光強度分布を拡大するズーム光学系として機能する。プリズムユニット10は、フーリエ変換面9に形成された回折パターン(光強度分布)を、輪帯率等を調整してズームレンズユニット11へと導くことができる。 The prism unit 10 and the zoom lens unit 11 are provided on the light source side with respect to the optical integrator 12, and function as a zoom optical system that expands the light intensity distribution formed on the Fourier transform surface 9. The prism unit 10 can guide the diffraction pattern (light intensity distribution) formed on the Fourier transform surface 9 to the zoom lens unit 11 by adjusting the annular ratio and the like.
また、ズームレンズユニット11は、プリズムユニット10とオプティカルインテグレータ12との間に設けられる。ズームレンズユニット11は、フーリエ変換面9に形成された回折パターンを、照明光学系のNAと投影光学系のNAとの比を基準としたσ値を調整してオプティカルインテグレータ12へ導くことができる。 Further, the zoom lens unit 11 is provided between the prism unit 10 and the optical integrator 12. The zoom lens unit 11 can guide the diffraction pattern formed on the Fourier transform surface 9 to the optical integrator 12 by adjusting the σ value based on the ratio of the NA of the illumination optical system and the NA of the projection optical system. ..
オプティカルインテグレータ12は、ズームレンズユニット11とコンデンサレンズ14との間に設けられ、輪帯率、開口角及びσ値が調整された回折パターンに応じて多数の2次光源を形成してコンデンサレンズ14へ導くハエの目レンズを含みうる。ただし、オプティカルインテグレータ12のハエの目レンズの部分は、オプティカルパイプ、回折光学素子やマイクロレンズアレイなどから構成されてもよい。オプティカルインテグレータ12とコンデンサレンズ14との間には、絞り13が設けられている。 The optical integrator 12 is provided between the zoom lens unit 11 and the condenser lens 14, and forms a large number of secondary light sources according to the diffraction pattern in which the annular ratio, the aperture angle, and the σ value are adjusted, and the condenser lens 14 is formed. May include fly eye lenses that lead to. However, the fly eye lens portion of the optical integrator 12 may be composed of an optical pipe, a diffractive optical element, a microlens array, or the like. A diaphragm 13 is provided between the optical integrator 12 and the condenser lens 14.
コンデンサレンズ14は、オプティカルインテグレータ12とレチクル24との間に設けられている。これにより、オプティカルインテグレータ12から導かれた多数の光束を集光してレチクル24を重畳的に照明することができる。コンデンサレンズ14は、ハーフミラー15を含み、露光光の一部が光量測定光学系16に入射する。光量測定光学系16は、光量を測定するセンサ17を持つ。このセンサ17により測定された光量に基づいて、露光時の露光量が適切に制御されうる。 The condenser lens 14 is provided between the optical integrator 12 and the reticle 24. As a result, a large number of light fluxes derived from the optical integrator 12 can be focused to illuminate the reticle 24 in a superimposed manner. The condenser lens 14 includes a half mirror 15, and a part of the exposure light is incident on the light quantity measuring optical system 16. The light amount measurement optical system 16 has a sensor 17 for measuring the light amount. The exposure amount at the time of exposure can be appropriately controlled based on the amount of light measured by the sensor 17.
非照明面の共役面には、マスキングユニット19が配置される。マスキングユニット19は、レチクル24の照明範囲を画定するために配置され、レチクル24を保持するレチクルステージ25および基板27を保持する基板ステージ28と共に同期して走査される。 The masking unit 19 is arranged on the conjugate surface of the non-illuminated surface. The masking unit 19 is arranged to define the illumination range of the reticle 24 and is scanned synchronously with the reticle stage 25 holding the reticle 24 and the substrate stage 28 holding the substrate 27.
マスキングユニット19からデフォーカスした位置に、2つの遮光部が設けられている。具体的には、被照明面から光源側にデフォーカスした位置及び被照明面の共役面から光源側にデフォーカスした位置のうちのいずれかの位置に、第1遮光部18が配置される。また、被照明面の共役面から被照明面側にデフォーカスした位置に、第2遮光部20が配置される。被照明面の照度分布の不均一性を軽減するため、第1遮光部18および第2遮光部20はそれぞれ、可変スリットであってもよい。 Two light-shielding portions are provided at positions defocused from the masking unit 19. Specifically, the first light-shielding portion 18 is arranged at either a position defocused from the illuminated surface to the light source side or a position defocused from the conjugate surface of the illuminated surface to the light source side. Further, the second light-shielding portion 20 is arranged at a position defocused from the conjugate surface of the illuminated surface to the illuminated surface side. In order to reduce the non-uniformity of the illuminance distribution on the illuminated surface, the first light-shielding portion 18 and the second light-shielding portion 20 may be variable slits, respectively.
コンデンサレンズ21からの光束に対して所定の傾きを有するミラー22で反射した光は、コリメータレンズ23を介してレチクル24を照明する。レチクル24のパターンは投影光学系26を介して基板27に投影される。 The light reflected by the mirror 22 having a predetermined inclination with respect to the light flux from the condenser lens 21 illuminates the reticle 24 via the collimator lens 23. The pattern of the reticle 24 is projected onto the substrate 27 via the projection optical system 26.
次に、図2を参照して、積算有効光源について説明する。図2(a)は、被照明面であるレチクル24面の照明領域24aを表す。図2(b)は、レチクル24面と共役関係にあるマスキングユニット19面の照明領域19aを表す。露光において照明領域24aが走査される。このとき、露光面上のある点を照明する入射角度分布は、照明領域24aにおける走査方向(y方向)に平行な直線24b上の各点を照明する入射角度分布を積算したものである。これを積算有効光源と呼ぶ。言い換えると、積算有効光源とは、照明領域のある一点を走査露光によって照明する期間における入射角度分布を積算した積算入射角度分布をいう。 Next, the integrated effective light source will be described with reference to FIG. FIG. 2A shows the illuminated area 24a of the 24 reticle, which is the illuminated surface. FIG. 2B shows the illumination region 19a of the masking unit 19 surface which is conjugate with the reticle 24 surface. The illumination region 24a is scanned during the exposure. At this time, the incident angle distribution that illuminates a certain point on the exposed surface is the sum of the incident angle distribution that illuminates each point on the straight line 24b parallel to the scanning direction (y direction) in the illumination region 24a. This is called an integrated effective light source. In other words, the integrated effective light source refers to an integrated incident angle distribution that integrates the incident angle distribution during the period in which a certain point in the illumination region is illuminated by scanning exposure.
次に、図3を参照して、第1遮光部18および第2遮光部20を用いたときに、スキャン後の積算有効光源がどのようになるかについて説明する。図3(a)は、第1遮光部18および第2遮光部20付近の拡大図である。図3(b)は、マスキングユニット19面上の点A,B,Cを通過する照明光の角度分布である。オプティカルインテグレータ12を経て、コンデンサレンズ14から点Aへ向かう光束は、光軸1bに対して平行に射出され、第1遮光部18および第2遮光部20の一部によってケラれることはない。そのため、レチクル面上の点A’における有効光源24aの形状は、ほぼ円形となる。 Next, with reference to FIG. 3, what will happen to the integrated effective light source after scanning when the first light-shielding unit 18 and the second light-shielding unit 20 are used will be described. FIG. 3A is an enlarged view of the vicinity of the first light-shielding portion 18 and the second light-shielding portion 20. FIG. 3B shows an angular distribution of illumination light passing through points A, B, and C on the 19th surface of the masking unit. The luminous flux from the condenser lens 14 toward the point A via the optical integrator 12 is emitted in parallel with the optical axis 1b, and is not eclipsed by a part of the first light-shielding portion 18 and the second light-shielding portion 20. Therefore, the shape of the effective light source 24a at the point A'on the reticle surface is substantially circular.
一方、オプティカルインテグレータ12を経て、コンデンサレンズ14から点Bへ向かう光束については、第1遮光部18の遮光部材18aおよび第2遮光部20の遮光部材20aによって一部の光線がケラれる。このため、レチクル面上の点B’における有効光源24bの角度分布は、走査露光の走査方向(Y方向)に関して非対称となる。有効光源24bの上側が欠けるのは第2遮光部20の遮光部材20aによってケラれるためであり、下側が欠けるのは第1遮光部18の遮光部材18aによってケラれるためである。このように、2つの遮光部があるために、有効光源24bには走査露光の走査方向(Y方向)に関して非対称性が生じることが分かる。レチクル面上の点C’における有効光源24cの形状についても、点Bへ向かう光束と同様の考え方で、Y方向に非対称性が生じる。 On the other hand, with respect to the light beam directed from the condenser lens 14 to the point B via the optical integrator 12, a part of the light beam is eclipsed by the light-shielding member 18a of the first light-shielding portion 18 and the light-shielding member 20a of the second light-shielding portion 20. Therefore, the angular distribution of the effective light source 24b at the point B'on the reticle surface becomes asymmetric with respect to the scanning direction (Y direction) of the scanning exposure. The upper side of the effective light source 24b is chipped because it is eclipsed by the light-shielding member 20a of the second light-shielding portion 20, and the lower side is chipped because it is eclipsed by the light-shielding member 18a of the first light-shielding portion 18. As described above, it can be seen that the effective light source 24b has asymmetry with respect to the scanning direction (Y direction) of the scanning exposure due to the two light-shielding portions. Regarding the shape of the effective light source 24c at the point C'on the reticle surface, asymmetry occurs in the Y direction in the same way as the light flux toward the point B.
点A、点B、点Cを含む直線上を通過する全ての光束をY方向に走査した積算有効光源は、図3(c)のようになり、走査方向に積算有効光源の非対称性が生じることが分かる。積算有効光源に非対称性があると、露光時に問題が生じうる。例えば、縦方向、横方向に同一線幅のライン・アンド・スペース・パターンを焼き付ける場合、縦方向のパターンと横方向のパターンとの間で線幅差が生じ、好ましくない。そのため、非対称性を補正することが必要となる。 The integrated effective light source obtained by scanning all the light flux passing on the straight line including the points A, B, and C in the Y direction is as shown in FIG. 3C, and the asymmetry of the integrated effective light source occurs in the scanning direction. You can see that. The asymmetry of the integrated effective light source can cause problems during exposure. For example, when a line-and-space pattern having the same line width is printed in the vertical and horizontal directions, a line width difference occurs between the vertical pattern and the horizontal pattern, which is not preferable. Therefore, it is necessary to correct the asymmetry.
実施形態において、フーリエ変換面9の光源側に第3遮光部8が配置される。第3遮光部8は、例えば、フーリエ変換面9の位置からややデフォーカスした位置に配置される。積算有効光源(積算入射角度分布)を補正するために、第3遮光部8を用いることが可能である。図4に、第3遮光部8の構成を示す。第3遮光部8は、例えば4枚の遮光板で構成されており、4枚の遮光板のそれぞれは、X方向またはY方向に独立して駆動させることができる。例えば、図3に示された積算有効光源の場合、2枚の遮光板をX方向に閉じる方向に駆動させ、X方向の光を部分的にケラせることによって、積算有効光源の非対称性を調整することができる。遮光部の代わりにフィルタを適用して調整してもよい。 In the embodiment, the third light-shielding portion 8 is arranged on the light source side of the Fourier transform surface 9. The third light-shielding portion 8 is arranged, for example, at a position slightly defocused from the position of the Fourier transform surface 9. The third shading unit 8 can be used to correct the integrated effective light source (integrated incident angle distribution). FIG. 4 shows the configuration of the third light-shielding unit 8. The third light-shielding portion 8 is composed of, for example, four light-shielding plates, and each of the four light-shielding plates can be driven independently in the X direction or the Y direction. For example, in the case of the integrated effective light source shown in FIG. 3, the asymmetry of the integrated effective light source is adjusted by driving the two shading plates in the closing direction in the X direction and partially eclipsing the light in the X direction. can do. A filter may be applied instead of the light-shielding portion for adjustment.
従来、フーリエ変換面9の分布は一様であったが、本実施形態では、図5(a)に示されるように、回折光学素子6が、Y方向に対して一様でない分布になるように設計される。回折光学素子6は、第1遮光部18と第2遮光部20とによって被照明面に生じる積算有効光源に関して、走査露光の走査方向(Y方向)と該走査方向と直交する非走査方向(X方向)との差を低減する回折特性を有する。具体的には、Y方向について、フーリエ変換面の分布と第1遮光部18および第2遮光部20により有効光源が非対称になる分とを相殺することにより、図5(b)に示されるように、積算有効光源のY方向の光強度分布が一定となるようにする。この結果、積算有効光源のX方向とY方向が対称になる。これにより、第3遮光部8を適用して非対称性の調整を行う必要がなくなる。このため、第3遮光部8を適用することによる像面照度の低下がなくなり、露光装置のスループットの観点で有利である。 Conventionally, the distribution of the Fourier transform surface 9 was uniform, but in the present embodiment, as shown in FIG. 5A, the diffractive optical element 6 has a non-uniform distribution with respect to the Y direction. Designed to. The diffractive optical element 6 has a non-scanning direction (X) that is orthogonal to the scanning direction (Y direction) of the scanning exposure and the scanning direction with respect to the integrated effective light source generated on the illuminated surface by the first light-shielding unit 18 and the second light-shielding unit 20. It has a diffraction characteristic that reduces the difference from the direction). Specifically, as shown in FIG. 5B, the distribution of the Fourier transform plane and the amount that the effective light source becomes asymmetrical due to the first light-shielding portion 18 and the second light-shielding portion 20 are offset in the Y direction. In addition, the light intensity distribution in the Y direction of the integrated effective light source is made constant. As a result, the X direction and the Y direction of the integrated effective light source become symmetrical. This eliminates the need to apply the third light-shielding portion 8 to adjust the asymmetry. Therefore, the decrease in the image plane illuminance due to the application of the third light-shielding portion 8 is eliminated, which is advantageous from the viewpoint of the throughput of the exposure apparatus.
<第2実施形態>
第2実施形態は、ズームレンズユニット11を用いて、σ値を変更して使用する際の例である。ズームレンズユニット11を駆動させてズームを変えると、第1遮光部18および第2遮光部20でのケラレの影響が変わり、積算有効光源の非対称性が変化する。そのため、1種類の回折光学素子を用いた場合、全てのズームで積算有効光源の非対称性を十分に小さくすることは困難である。よって、本実施形態では第3遮光部8も併用する。
<Second Embodiment>
The second embodiment is an example in which the zoom lens unit 11 is used and the σ value is changed. When the zoom lens unit 11 is driven to change the zoom, the influence of eclipse on the first light-shielding unit 18 and the second light-shielding unit 20 changes, and the asymmetry of the integrated effective light source changes. Therefore, when one type of diffractive optical element is used, it is difficult to sufficiently reduce the asymmetry of the integrated effective light source in all zooms. Therefore, in the present embodiment, the third shading unit 8 is also used.
図6は、ズームレンズユニット11を駆動させたときの、σ値と積算有効光源の非対称性との関係を示したグラフである。図6に示されているように、従来技術では、どのσ値についても、積算有効光源に非対称性がある。一方、本実施形態では、回折光学素子6は、ズームレンズユニット11により変更可能なσ値の範囲の中心値において、積算有効光源に関して走査方向(Y方向)と非走査方向(X方向)との差が低減するような回折特性を有するように設計される。それにより、σ値の駆動範囲の積算有効光源の非対称性が従来技術に対して小さくなる。 FIG. 6 is a graph showing the relationship between the σ value and the asymmetry of the integrated effective light source when the zoom lens unit 11 is driven. As shown in FIG. 6, in the prior art, the integrated effective light source has asymmetry for any σ value. On the other hand, in the present embodiment, the diffractive optical element 6 has a scanning direction (Y direction) and a non-scanning direction (X direction) with respect to the integrated effective light source at the center value in the range of the σ value that can be changed by the zoom lens unit 11. It is designed to have diffraction characteristics that reduce the difference. As a result, the asymmetry of the integrated effective light source in the driving range of the σ value becomes smaller than that of the prior art.
図7は、図6に示されるような従来の非対称性を持つ積算有効光源で露光した場合の縦方向のパターンと横方向のパターンの線幅差を光学像シミュレーションによって求めた結果である。このグラフから、従来技術よりも本実施形態の方が、縦方向のパターンと横方向のパターンの線幅差が小さいことが分かる。 FIG. 7 is a result obtained by optical image simulation of the line width difference between the vertical pattern and the horizontal pattern when exposed with a conventional integrated effective light source having asymmetry as shown in FIG. From this graph, it can be seen that the line width difference between the vertical pattern and the horizontal pattern is smaller in the present embodiment than in the prior art.
実際に装置を使用するときには、図6に示されるような積算有効光源の非対称性の大きさをスタートとして、使用するσに応じ、第3遮光部8を用いて非対称性の調整を行う。すなわち、第3遮光部8は、ズームレンズユニットの状態(使用されるσ値)に応じて調整される。従来例と比べて、使用するσ値の範囲で非対称性の小さい本実施形態の方が、非対称性を調整すべき量が少ないため、第3遮光部8適用分の像面照度の低下が少なく、露光装置のスループットの観点で有利である。 When the device is actually used, the asymmetry is adjusted by using the third shading unit 8 according to the σ used, starting from the magnitude of the asymmetry of the integrated effective light source as shown in FIG. That is, the third light-shielding unit 8 is adjusted according to the state (σ value used) of the zoom lens unit. Compared with the conventional example, in the present embodiment in which the asymmetry is small in the range of the σ value to be used, the amount of the asymmetry to be adjusted is small, so that the image plane illuminance for applying the third light-shielding portion 8 is less reduced. , It is advantageous in terms of the throughput of the exposure apparatus.
<物品製造方法の実施形態>
本発明の実施形態に係る物品製造方法は、例えば、半導体デバイス等のマイクロデバイスや微細構造を有する素子等の物品を製造するのに好適である。本実施形態の物品製造方法は、基板に塗布された感光剤に上記の露光装置を用いて潜像パターンを形成する工程(基板を露光する工程)と、かかる工程で潜像パターンが形成された基板を現像する工程とを含む。更に、かかる製造方法は、他の周知の工程(酸化、成膜、蒸着、ドーピング、平坦化、エッチング、レジスト剥離、ダイシング、ボンディング、パッケージング等)を含む。本実施形態の物品製造方法は、従来の方法に比べて、物品の性能・品質・生産性・生産コストの少なくとも1つにおいて有利である。
<Embodiment of article manufacturing method>
The article manufacturing method according to the embodiment of the present invention is suitable for manufacturing articles such as microdevices such as semiconductor devices and elements having a fine structure, for example. In the article manufacturing method of the present embodiment, a latent image pattern is formed on a photosensitive agent applied to a substrate by using the above-mentioned exposure apparatus (a step of exposing the substrate), and a latent image pattern is formed in such a step. Includes a step of developing the substrate. Further, such a manufacturing method includes other well-known steps (oxidation, film formation, vapor deposition, doping, flattening, etching, resist peeling, dicing, bonding, packaging, etc.). The article manufacturing method of the present embodiment is advantageous in at least one of the performance, quality, productivity, and production cost of the article as compared with the conventional method.
発明は上記実施形態に制限されるものではなく、発明の精神及び範囲から離脱することなく、様々な変更及び変形が可能である。従って、発明の範囲を公にするために請求項を添付する。 The invention is not limited to the above embodiments, and various modifications and modifications can be made without departing from the spirit and scope of the invention. Therefore, a claim is attached to make the scope of the invention public.
1:光源、6:回折光学素子、11:ズームレンズユニット、18:第1遮光部、19:マスキングユニット、20:第2遮光部、24:レチクル(原版)、26:投影光学系、27:基板 1: Light source, 6: Diffractive optical element, 11: Zoom lens unit, 18: First light-shielding unit, 19: Masking unit, 20: Second light-shielding unit, 24: Reticle (original plate), 26: Projection optical system, 27: substrate
Claims (9)
光源からの光で原版の被照明面を照明する照明光学系を有し、
前記照明光学系は、
所定面上に、前記光源からの光束の光強度分布を回折作用により変換する回折光学素子と、
前記被照明面の共役面から前記光源側にデフォーカスした位置に配置される第1遮光部と、
前記被照明面の前記共役面から前記被照明面側にデフォーカスした位置に配置される第2遮光部と、を有し、
前記回折光学素子は、前記第1遮光部と前記第2遮光部とによって前記被照明面に生じる、ある一点を前記走査露光によって照明する期間における入射角度分布を積算した積算入射角度分布に関して、前記走査露光の走査方向と該走査方向と直交する非走査方向との差を低減する回折特性を有する、ことを特徴とする露光装置。 An exposure device that performs scanning exposure of a substrate.
It has an illumination optical system that illuminates the illuminated surface of the original plate with the light from the light source.
The illumination optical system is
A diffractive optical element that converts the light intensity distribution of the luminous flux from the light source on a predetermined surface by a diffraction action.
A first light-shielding portion arranged at a position defocused from the conjugate surface of the illuminated surface to the light source side,
It has a second light-shielding portion arranged at a position defocused from the conjugate surface of the illuminated surface to the illuminated surface side.
The diffractive optical element relates to an integrated incident angle distribution obtained by integrating the incident angle distribution during a period in which a certain point is illuminated by the scanning exposure, which is generated on the illuminated surface by the first light-shielding portion and the second light-shielding portion. An exposure apparatus characterized by having a diffraction characteristic that reduces the difference between the scanning direction of scanning exposure and the non-scanning direction orthogonal to the scanning direction.
前記回折光学素子は、前記ズームレンズユニットにより変更可能なσ値の範囲の中心値において前記差がなくなるような回折特性を有する、ことを特徴とする請求項1に記載の露光装置。 It has a zoom lens unit that changes the σ value,
The exposure apparatus according to claim 1, wherein the diffraction optical element has a diffraction characteristic such that the difference disappears at the center value in the range of the σ value that can be changed by the zoom lens unit.
前記ズームレンズユニットの状態に応じて、前記第3遮光部を調整する、ことを特徴とする請求項2に記載の露光装置。 It has a third light-shielding portion that adjusts the integrated incident angle distribution.
The exposure apparatus according to claim 2, wherein the third light-shielding portion is adjusted according to the state of the zoom lens unit.
前記差を低減するように前記可変スリットを調整する、ことを特徴とする請求項1乃至4のいずれか1項に記載の露光装置。 The first light-shielding portion and the second light-shielding portion each include a variable slit.
The exposure apparatus according to any one of claims 1 to 4, wherein the variable slit is adjusted so as to reduce the difference.
前記ズームレンズユニットの状態に応じて、前記可変スリットを調整する、ことを特徴とする請求項3または4に記載の露光装置。 The third light-shielding portion includes a variable slit and includes a variable slit.
The exposure apparatus according to claim 3 or 4, wherein the variable slit is adjusted according to the state of the zoom lens unit.
前記露光された基板を現像する工程と、を有し、前記現像された基板から物品を製造することを特徴とする物品製造方法。 A step of exposing a substrate using the exposure apparatus according to any one of claims 1 to 8.
An article manufacturing method comprising a step of developing the exposed substrate and producing an article from the developed substrate.
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KR20220010750A (en) | 2022-01-26 |
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WO2021044797A1 (en) | 2021-03-11 |
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