JP2021036719A - 電子機器 - Google Patents
電子機器 Download PDFInfo
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- JP2021036719A JP2021036719A JP2020191181A JP2020191181A JP2021036719A JP 2021036719 A JP2021036719 A JP 2021036719A JP 2020191181 A JP2020191181 A JP 2020191181A JP 2020191181 A JP2020191181 A JP 2020191181A JP 2021036719 A JP2021036719 A JP 2021036719A
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- 238000003384 imaging method Methods 0.000 abstract description 85
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Classifications
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/745—Circuitry for generating timing or clock signals
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14634—Assemblies, i.e. Hybrid structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/50—Constructional details
- H04N23/54—Mounting of pick-up tubes, electronic image sensors, deviation or focusing coils
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/60—Control of cameras or camera modules
- H04N23/63—Control of cameras or camera modules by using electronic viewfinders
- H04N23/631—Graphical user interfaces [GUI] specially adapted for controlling image capture or setting capture parameters
- H04N23/632—Graphical user interfaces [GUI] specially adapted for controlling image capture or setting capture parameters for displaying or modifying preview images prior to image capturing, e.g. variety of image resolutions or capturing parameters
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
- H04N25/44—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by partially reading an SSIS array
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
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- H—ELECTRICITY
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- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/51—Control of the gain
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/53—Control of the integration time
- H04N25/533—Control of the integration time by using differing integration times for different sensor regions
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/57—Control of the dynamic range
- H04N25/58—Control of the dynamic range involving two or more exposures
- H04N25/581—Control of the dynamic range involving two or more exposures acquired simultaneously
- H04N25/583—Control of the dynamic range involving two or more exposures acquired simultaneously with different integration times
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
- H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
- H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
- H04N25/134—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements based on three different wavelength filter elements
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- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Human Computer Interaction (AREA)
- Studio Devices (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
図1は、積層型撮像素子の断面図である。なお、この積層型撮像素子100は、本願出願人が先に出願した特願2012−139026号に記載されているものである。撮像素子100は、入射光に対応した画素信号を出力する撮像チップ113と、画素信号を処理する信号処理チップ111と、画素信号を記憶するメモリチップ112とを備える。これら撮像チップ113、信号処理チップ111、及びメモリチップ112は積層されており、Cu等の導電性を有するバンプ109により互いに電気的に接続される。
第2実施形態では、上記した第1実施形態における電子機器1を、撮像装置1Aと電子機器1Bとに分離した構成としている。
Claims (1)
- 複数の画素と、複数の前記画素のうち、第1方向と前記第1方向と交差する第2方向とにおいてそれぞれ配置される複数の第1画素に接続され、前記第1画素を制御するための第1制御信号が出力される第1制御線と、複数の前記画素のうち、前記第1方向と前記第2方向とにおいてそれぞれ配置される複数の第2画素に接続され、前記第2画素を制御するための第2制御信号が出力される第2制御線と、を有する撮像素子と、
前記第1画素から出力される第1信号に基づく第1画像データと、前記第2画素から出力される第2信号に基づく第2画像データと、を生成する生成部と、
を備える電子機器。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2022196223A JP7544116B2 (ja) | 2013-08-12 | 2022-12-08 | 撮像素子及び撮像装置 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013167308 | 2013-08-12 | ||
JP2013167308 | 2013-08-12 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018196396A Division JP7063788B2 (ja) | 2013-08-12 | 2018-10-18 | 電子機器 |
Related Child Applications (1)
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JP2022196223A Division JP7544116B2 (ja) | 2013-08-12 | 2022-12-08 | 撮像素子及び撮像装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2021036719A true JP2021036719A (ja) | 2021-03-04 |
JP2021036719A5 JP2021036719A5 (ja) | 2021-08-26 |
JP7192843B2 JP7192843B2 (ja) | 2022-12-20 |
Family
ID=52468286
Family Applications (4)
Application Number | Title | Priority Date | Filing Date |
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JP2015531789A Pending JPWO2015022900A1 (ja) | 2013-08-12 | 2014-08-07 | 電子機器、電子機器の制御方法、及び制御プログラム |
JP2018196396A Active JP7063788B2 (ja) | 2013-08-12 | 2018-10-18 | 電子機器 |
JP2020191181A Active JP7192843B2 (ja) | 2013-08-12 | 2020-11-17 | 撮像素子及び電子機器 |
JP2022196223A Active JP7544116B2 (ja) | 2013-08-12 | 2022-12-08 | 撮像素子及び撮像装置 |
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JP2015531789A Pending JPWO2015022900A1 (ja) | 2013-08-12 | 2014-08-07 | 電子機器、電子機器の制御方法、及び制御プログラム |
JP2018196396A Active JP7063788B2 (ja) | 2013-08-12 | 2018-10-18 | 電子機器 |
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JP2022196223A Active JP7544116B2 (ja) | 2013-08-12 | 2022-12-08 | 撮像素子及び撮像装置 |
Country Status (5)
Country | Link |
---|---|
US (5) | US10321083B2 (ja) |
EP (1) | EP3035667B1 (ja) |
JP (4) | JPWO2015022900A1 (ja) |
CN (2) | CN110213508B (ja) |
WO (1) | WO2015022900A1 (ja) |
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EP3035667B1 (en) * | 2013-08-12 | 2024-06-19 | Nikon Corporation | Electronic device |
JP2015065270A (ja) * | 2013-09-25 | 2015-04-09 | ソニー株式会社 | 固体撮像装置およびその製造方法、並びに電子機器 |
JP6343163B2 (ja) * | 2014-04-07 | 2018-06-13 | キヤノン株式会社 | 集積回路装置 |
WO2017057268A1 (ja) * | 2015-09-30 | 2017-04-06 | 株式会社ニコン | 撮像装置、および制御装置 |
CN112714252B (zh) * | 2015-09-30 | 2023-04-07 | 株式会社尼康 | 摄像装置 |
JPWO2017170716A1 (ja) * | 2016-03-31 | 2019-03-07 | 株式会社ニコン | 撮像装置、画像処理装置、および電子機器 |
JPWO2017170726A1 (ja) * | 2016-03-31 | 2019-02-28 | 株式会社ニコン | 撮像装置および電子機器 |
JP7372034B2 (ja) | 2016-03-31 | 2023-10-31 | 株式会社ニコン | 撮像装置、および画像処理装置 |
JPWO2017170719A1 (ja) * | 2016-03-31 | 2019-02-28 | 株式会社ニコン | 撮像装置、および電子機器 |
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JPWO2017170725A1 (ja) * | 2016-03-31 | 2019-02-28 | 株式会社ニコン | 撮像装置、被写体検出装置、および電子機器 |
JP2017220892A (ja) * | 2016-06-10 | 2017-12-14 | オリンパス株式会社 | 画像処理装置及び画像処理方法 |
JP6808993B2 (ja) * | 2016-06-17 | 2021-01-06 | 株式会社ニコン | 撮像素子、電子機器、撮像方法、およびプログラム |
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JP6838725B2 (ja) * | 2016-10-20 | 2021-03-03 | 日立Astemo株式会社 | カメラ装置 |
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CN108711397A (zh) * | 2018-08-13 | 2018-10-26 | 京东方科技集团股份有限公司 | 显示面板的光学调节方法、光学调节装置及显示装置 |
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WO2021124736A1 (ja) * | 2019-12-19 | 2021-06-24 | 富士フイルム株式会社 | 撮像装置 |
JP7099560B2 (ja) * | 2021-01-19 | 2022-07-12 | 株式会社ニコン | 撮像素子及び撮像装置 |
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WO2024009750A1 (ja) * | 2022-07-06 | 2024-01-11 | ソニーセミコンダクタソリューションズ株式会社 | 撮像装置、および撮像装置の作動方法 |
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