JP2020198365A - Substrate processing system and substrate processing method - Google Patents

Abstract

To appropriately perform pretreatment for bonding a substrate.SOLUTION: The present invention provides a substrate processing system that processes a substrate, wherein a surface film is formed on the substrate, wherein the substrate processing system includes an outer peripheral modification device that modifies the outer peripheral portion of the surface film, a removal device that removes particles generated by modifying the outer peripheral portion of the surface film, and a control device that controls the operation of the outer peripheral modification device and the removal device. Alternatively, the present invention provides a substrate processing method that processes a substrate, wherein a surface film is formed on the substrate, wherein the substrate processing method includes modifying the outer peripheral portion of the surface film, and removing particles generated by modifying the outer peripheral portion of the surface film.SELECTED DRAWING: Figure 11

Description

The present disclosure relates to a substrate processing system and a substrate processing method.

In Patent Document 1, a disc-shaped grinding tool provided with abrasive grains on the outer peripheral portion is rotated, and at least the outer peripheral surface of the grinding tool is linearly contacted with the semiconductor wafer to omit the peripheral end portion of the semiconductor wafer. It is disclosed to grind in an L shape. A semiconductor wafer is manufactured by laminating two silicon wafers.

Japanese Unexamined Patent Publication No. 9-216152

The technique according to the present disclosure appropriately preprocesses the bonding of substrates.

One aspect of the present disclosure is a substrate processing system for processing a substrate, wherein a surface film is formed on the substrate, an outer peripheral modifying device for modifying the outer peripheral portion of the surface film, and an outer peripheral portion of the surface film. It includes a removing device for removing particles generated by the modification of the above, and a control device for controlling the operation of the outer peripheral modifying device and the removing device.

According to the present disclosure, the pretreatment for bonding the substrates can be appropriately performed.

It is a side view which shows the outline of the structural example of a polymerization wafer. It is a top view which shows an example of the polymerization wafer which performs the laser trimming process. It is explanatory drawing explaining the scattering of the particle in the pre-processing. It is a top view which shows the outline of the structural example of the processing system which concerns on this embodiment. It is a side view which shows the outline of the structural example of the pretreatment apparatus. It is a vertical cross-sectional view which shows the outline of the structural example of the protective film forming apparatus. It is sectional drawing which shows the outline of the structural example of the protective film forming apparatus. It is explanatory drawing which shows the state of the protective film formation schematically. It is explanatory drawing which shows an example of the formed protective film. It is explanatory drawing which shows the state of the pretreatment schematically. It is explanatory drawing which shows the state of cleaning of the processing wafer schematically. It is explanatory drawing which shows the state of edge trim schematically. It is a vertical cross-sectional view which shows the outline of another configuration example of the protective film forming apparatus. It is explanatory drawing which shows the state of removal of the protective film in the protective film forming apparatus. It is explanatory drawing which shows the state of the pretreatment schematically. It is a top view which shows the outline of the structural example of the processing system which concerns on 2nd Embodiment. It is a side view which shows the outline of the structural example of the liquid processing apparatus. It is explanatory drawing which shows the state of the wet etching in the liquid processing apparatus.

In the process of manufacturing a semiconductor device, the back surface of a wafer in which devices such as a plurality of electronic circuits are formed on the front surface is ground to thin the wafer. If the thinned wafer is directly conveyed or subsequently processed, warpage or cracking may occur. Therefore, in order to suppress the occurrence of warpage and cracking, for example, the wafer is reinforced by attaching it to the support wafer.

FIG. 1 is a side view showing an outline of the configuration of a polymerized wafer T formed by laminating a processed wafer W as a substrate and a supporting wafer S as another substrate. Hereinafter, in the processed wafer W, the surface to be joined to the support wafer S is referred to as a front surface Wa, and the surface opposite to the front surface Wa is referred to as a back surface Wb. Similarly, in the support wafer S, the surface bonded to the processed wafer W is referred to as a front surface Sa, and the surface opposite to the front surface Sa is referred to as a back surface Sb.

The processed wafer W is a semiconductor wafer such as a silicon wafer, and a device layer (not shown) including a device such as a plurality of electronic circuits is formed on the surface Wa. Further, an oxide film Fw, for example, a SiO ₂ film (TEOS film) is further formed on the device layer.

The support wafer S is a wafer that supports the processed wafer W. An oxide film Fs, for example, a SiO ₂ film (TEOS film) is formed on the surface Sa of the support wafer S. Further, the support wafer S functions as a protective material for protecting the device layer on the surface of the processing wafer W. When a plurality of devices are formed on the surface Sa of the support wafer S, a device layer (not shown) is formed on the surface Sa as in the processing wafer W.

Normally, as shown in FIG. 1A, the outer end portion of the processed wafer W is chamfered, but when the back surface Wb of the processed wafer W is ground as described above, the outer end portion of the processed wafer W is subjected to a grinding process. The part has a sharp and pointed shape (so-called knife edge shape). Then, chipping occurs at the outer end portion of the processed wafer W, and the processed wafer W may be damaged. Therefore, as shown in FIG. 1B, so-called edge trimming is performed in which the peripheral edge portion We of the processed wafer W is removed in advance before the grinding process. The peripheral edge portion We removed by the edge trim is, for example, in the range of 1 mm to 5 mm in the radial direction from the outer end portion of the processed wafer W.

The end face grinding apparatus described in Patent Document 1 described above is an apparatus for performing this edge trimming. However, in this end face grinding apparatus, since the edge trim is performed by grinding, a large amount of dust (hereinafter referred to as "particles") is generated during the grinding process. Then, if such particles are scattered inside the apparatus, the wafer may be contaminated.

Therefore, as shown in FIG. 2, the present inventors form an internal modified layer M by condensing laser light at the boundary between the peripheral portion We and the central portion Wc as a removal target by the edge trim. The peripheral portion We was peeled off along the internal modified layer M (laser trimming process).

According to such a laser trimming process, the peripheral portion We can be removed without grinding as in Patent Document 1, so that the amount of particles generated in the edge trim can be reduced.

Further, in order to normally remove the peripheral portion We of the processed wafer W by the laser trimming process, the bonding strength between the oxide film Fw and the oxide film Fs on the peripheral portion We before joining the processed wafer W and the supporting wafer S. Pretreatment is performed to reduce the amount. The pretreatment is performed, for example, by condensing laser light on the outer peripheral portion of the oxide film Fw formed on the peripheral portion We of the processed wafer W to roughen or remove the surface of the oxide film Fw (hereinafter,). In the above description, the outer peripheral portion of the oxide film Fw to which the pretreatment is performed may be referred to as "processed region Fwe"). Then, in the processed region Fwe formed by such pretreatment, the oxide film Fw and the oxide film Fs are not bonded at the time of bonding, and in the polymerized wafer T, a bonded region and an unbonded region are formed.

Here, when the pretreatment is performed by irradiating the outer peripheral surface of the oxide film Fw with a laser beam as described above, as shown in FIG. 3, a small amount of particles P generated by the irradiation of the laser beam Lr are scattered. May be done. When the particles generated in this way adhere to the surface of the oxide film Fw, voids are generated at the bonding interface between the oxide film Fw and the oxide film Fs due to the adhered particles, and the processed wafer W and the support wafer S are bonded together. Was not performed normally. That is, there is room for improvement in the pretreatment before bonding the wafers.

The technique according to the present disclosure appropriately preprocesses the bonding of substrates. Hereinafter, the method of pretreatment performed using the processing system according to the present embodiment will be described with reference to the drawings. In the present specification and the drawings, elements having substantially the same functional configuration are designated by the same reference numerals to omit duplicate description.

First, the configuration of the processing system according to the present embodiment will be described. FIG. 4 is a plan view showing an outline of the configuration of the processing system 1. In the following, in order to clarify the positional relationship, the X-axis direction, the Y-axis direction, and the Z-axis direction that are orthogonal to each other are defined, and the Z-axis positive direction is defined as the vertically upward direction.

As shown in FIG. 4, the processing system 1 includes, for example, a loading / unloading station 2 in which cassettes Cw, Cs, and Ct capable of accommodating a plurality of processing wafers W, support wafers S, and polymerization wafers T are carried in / out from the outside. , The processing wafer W, the support wafer S, and the polymerization wafer T are integrally connected to a processing station 3 provided with various processing devices for performing desired processing.

The loading / unloading station 2 is provided with a cassette mounting table 10. In the illustrated example, a plurality of, for example, four cassette mounting plates 11 are arranged side by side in a row in the Y-axis direction on the cassette mounting table 10. Cassettes Cw, Cs, and Ct can be placed on these cassette mounting plates 11 when the cassettes Cw, Cs, and Ct are carried in and out of the processing system 1. As described above, the loading / unloading station 2 is configured to be able to hold a plurality of processing wafers W, support wafers S, and polymerization wafers T. The number of cassette mounting plates 11 is not limited to this embodiment and can be set arbitrarily. Further, in addition to the cassettes Cw, Cs, and Ct, a cassette for collecting a defective wafer, for example, may be mounted on the cassette mounting plate 11.

The loading / unloading station 2 is provided with a wafer transfer device 20 adjacent to the cassette mounting table 10 on the X-axis positive direction side of the cassette mounting table 10. The wafer transfer device 20 is configured to be movable on a transfer path 21 extending in the Y-axis direction. Further, the wafer transfer device 20 has a transfer arm 22 that holds and transfers the processed wafer W, the support wafer S, and the polymerized wafer T. The transport arm 22 is configured to be movable in the horizontal direction, the vertical direction, around the horizontal axis, and around the vertical axis. The configuration of the transport arm 22 is not limited to this embodiment, and any configuration can be adopted. The wafer transfer device 20 is configured to be able to transfer the processed wafer W, the support wafer S, and the polymerized wafer T to the cassettes Cw, Cs, Ct of the cassette mounting table 10 and the transition device 70 described later.

The processing station 3 is provided with, for example, three processing blocks G1 to G3. For example, the first processing block G1 is provided on the front side of the processing station 3 (the negative direction side of the Y axis in FIG. 4), and the rear side of the processing station 3 (the positive direction side of the Y axis in FIG. 4) The processing block G2 of 2 is provided. A third processing block G3 is provided on the loading / unloading station 2 side (X-axis negative direction side in FIG. 4) of the processing station 3.

A protective film forming device 30 and a pretreatment device 40 as an outer peripheral reforming device are arranged in the first processing block G1. The protective film forming device 30 and the pretreatment device 40 are arranged side by side in this order from the X-axis negative direction side (carry-in / out station 2 side).

Further, in the second processing block G2, a cleaning device 50 and a joining device 60 as removal devices are arranged. The cleaning device 50 and the joining device 60 are arranged side by side in this order from the X-axis negative direction side (carry-in / out station 2 side).

The number and arrangement of the protective film forming device 30, the pretreatment device 40, the cleaning device 50, and the joining device 60 are not limited to this. For example, the protective film forming device 30 and the pretreatment device 40, or the cleaning device 50 and the joining device 60 may be laminated. Further, the protective film forming device 30 and the pretreatment device 40 may be provided in the second processing block G2, and the combination of the devices arranged in the first processing block G1 and the second processing block G2 is also this. Not limited to.

The protective film forming apparatus 30 supplies the protective film material to the treated wafer W before the pretreatment in the pretreatment apparatus 40 described later, and forms the protective film Wp on the surface of the oxide film Fw. As the protective film material, for example, a water-soluble material is selected. The detailed configuration of the protective film forming apparatus 30 will be described later.

The pretreatment apparatus 40 irradiates the outer peripheral portion of the oxide film Fw with a laser beam to form a modified pattern on the surface of the oxide film Fw to form a processed region Fwe. As shown in FIG. 5, the pretreatment apparatus 40 holds the processing wafer W in a state where the front surface Wa (formation surface of the oxide film Fw) of the processing wafer W is on the upper side and the back surface Wb is arranged on the lower side. It has 41. The chuck 41 is configured to be movable in the X-axis direction and the Y-axis direction by the moving mechanism 42. The moving mechanism 42 is composed of a general precision XY stage. Further, the chuck 41 is configured to be rotatable around a vertical axis by a rotation mechanism 43.

Above the chuck 41, a laser irradiation unit 44 that irradiates the surface of the oxide film Fw in the processing region Fwe with the laser light Lr is provided. The laser irradiation unit 44 collects high-frequency pulsed laser light Lr oscillated from a laser light oscillator (not shown), for example, infrared light, at a desired position in the processing region Fwe. The laser irradiation unit 44 may be configured to be movable in the X-axis direction and the Y-axis direction by the moving mechanism 45. The moving mechanism 45 is composed of a general precision XY stage. Further, the laser irradiation unit 44 may be configured to be movable in the Z-axis direction by the elevating mechanism 46.

The laser beam Lr may be a CW laser, and the wavelength can be arbitrarily selected. Further, according to the above configuration, the focusing position of the laser beam Lr with respect to the processing region Fwe is adjusted by the horizontal movement of the chuck 31 and the laser irradiation unit 34 in addition to the rotation of the chuck 31, but instead of such horizontal movement, Adjustment may be performed by arranging a galvano mirror and changing the mirror angle.

In this pretreatment, as shown in FIG. 3, particles P are generated by condensing the laser beam, and the generated particles P are scattered inside the pretreatment device 40.

The cleaning device 50 cleans the processed wafer W that has been pretreated in the pretreatment device 40. Specifically, by removing the protective film Wp formed in the protective film forming apparatus 30, the particles P adhering to the surface of the protective film Wp in the pretreatment apparatus 40 are washed away together with the protective film Wp. Here, as the cleaning liquid supplied to the processing wafer W in the cleaning apparatus 50, a cleaning liquid capable of removing the protective film Wp, for example, pure water is selected according to the present embodiment.

The joining device 60 joins the oxide film Fw of the processing wafer W and the oxide film Fs of the support wafer S. In the bonding device 60, the oxide film Fw and the oxide film Fs are each activated and hydrophilized prior to bonding. Then, the hydrophilized oxide film Fw and the oxide film Fs start bonding by hydrogen bonding when the central portion of the processed wafer W and the central portion of the support wafer S are brought into contact with each other, and a so-called bonding wave is generated. Then, when the bonding wave starts diffusing from the central portion of the oxide films Fw and Fs and reaches the peripheral portion, the entire surface of the oxide films Fw and Fs is bonded by hydrogen bonds. Further, the bonded polymerized wafer T is annealed to remove water from the oxide film Fw and the oxide film Fs to secure the bonding strength. In the processed region Fwe that has been pretreated in the pretreatment apparatus 40, the oxide film Fw and the oxide film Fs are not bonded, and a bonded region is formed.

The third processing block G3 is provided with a transition device 70 for delivering the processing wafer W, the support wafer S, and the polymerization wafer T. The number and arrangement of the transition devices 70 are not limited to this. For example, the transition device 70 may be provided in multiple stages.

As shown in FIG. 4, a wafer transfer region 80 is formed in a region surrounded by the first processing block G1 to the third processing block G3. For example, a wafer transfer device 81 is arranged in the wafer transfer area 80.

The wafer transfer device 81 has, for example, a transfer arm 82 that is movable in the vertical direction, the horizontal direction (X-axis direction, Y-axis direction), and around the vertical axis. The transfer arm 82 holds the vicinity of the end portion (near the peripheral edge portion We) of the back surface Wb of the processing wafer W from below.

The wafer transfer device 81 moves in the wafer transfer area 80, and the processing wafer W is attached to an arbitrary device of the first processing block G1, the device of the second processing block G2, and the device of the third processing block G3. , Support wafer S and polymerization wafer T can be conveyed.

A control device 90 is provided in the above processing system 1. The control device 90 is, for example, a computer and has a program storage unit (not shown). The program storage unit stores a program that controls wafer processing in the processing system 1. Further, the program storage unit also stores a program for controlling the operation of the drive system of the above-mentioned various processing devices and transfer devices to realize the wafer processing described later in the processing system 1. The program may be recorded on a computer-readable storage medium H and may be installed on the control device 90 from the storage medium H.

Next, the configuration of the protective film forming apparatus 30 described above will be described. 6 and 7 are a vertical sectional view and a horizontal sectional view showing an outline of the configuration of the protective film forming apparatus 30, respectively.

As shown in FIG. 6, the protective film forming apparatus 30 has a processing container 100 whose inside can be closed. As shown in FIG. 7, a carry-in outlet 101 for the processing wafer W is formed on the side surface of the processing container 100, and an opening / closing shutter 102 is provided at the carry-in outlet 101.

As shown in FIG. 6, a spin chuck 110 for holding and rotating the processing wafer W is provided in the central portion of the processing container 100. The spin chuck 110 has a horizontal upper surface, and for example, a suction port (not shown) for sucking the processed wafer W is provided on the upper surface. By suction from this suction port, the processed wafer W can be sucked and held on the spin chuck 110.

Below the spin chuck 110, for example, a chuck drive unit 111 provided with a motor or the like is provided. The spin chuck 110 can be rotated to an arbitrary speed by the chuck drive unit 111. Further, the chuck drive unit 111 is provided with a lifting drive source such as a cylinder, and the spin chuck 110 can be raised and lowered.

Around the spin chuck 110, a cup 112 that receives and collects the protective liquid scattered or dropped from the processing wafer W is provided. An exhaust pipe 113 for discharging the collected liquid and an exhaust pipe 114 for exhausting the atmosphere in the cup 112 are connected to the lower surface of the cup 112.

As shown in FIG. 7, a rail 120 extending along the Y direction (left-right direction in FIG. 7) is formed on the X-direction negative direction (downward direction in FIG. 7) side of the cup 112. The rail 120 is formed, for example, from the outside of the cup 112 on the negative direction in the Y direction (left direction in FIG. 7) to the outside on the positive direction in the Y direction (right direction in FIG. 7). For example, two arms 121 and 122 are attached to the rail 120.

As shown in FIGS. 6 and 7, the first arm 121 supports a protective film material nozzle 130 that supplies a protective film material to the oxide film Fw formed on the processed wafer W. The first arm 121 is movable on the rail 120 by the nozzle driving unit 131 shown in FIG. 7. As a result, the protective film material nozzle 130 can move from the standby portion 132 installed on the outside of the cup 112 on the positive side in the Y direction to above the center of the processing wafer W in the cup 112, and further, the processing wafer W can be moved. It can move on the surface in the radial direction of the processed wafer W. Further, the first arm 121 can be raised and lowered by the nozzle driving unit 131, and the height of the protective film material nozzle 130 can be adjusted.

As shown in FIG. 6, a supply pipe 133 for supplying the protective film material to the protective film material nozzle 130 is connected to the protective film material nozzle 130. The supply pipe 133 communicates with the protective film material supply source 134 that stores the protective film material inside. Further, the supply pipe 133 is provided with a supply equipment group 135 including a valve for controlling the flow of the protective film material, a flow rate adjusting unit, and the like.

As shown in FIGS. 6 and 7, a solvent for removing the protective film material, for example, a solvent nozzle 140 as an outer peripheral removing portion for supplying pure water is supported on the second arm 122. The second arm 122 is movable on the rail 120 by the nozzle drive unit 141 shown in FIG. 7, and the solvent nozzle 140 is cupped from the standby unit 142 provided on the outer side of the cup 112 in the negative direction in the Y direction. It can be moved to the upper part of the center of the processed wafer W in 112, and can be further moved on the surface of the processed wafer W in the radial direction of the processed wafer W. Further, the nozzle driving unit 141 allows the second arm 122 to be raised and lowered, and the height of the solvent nozzle 140 can be adjusted.

As shown in FIG. 6, a supply pipe 143 for supplying a solvent to the solvent nozzle 140 is connected to the solvent nozzle 140. The supply pipe 143 communicates with the solvent supply source 144 that stores the solvent inside. Further, the supply pipe 143 is provided with a supply equipment group 145 including a valve for controlling the flow of the solvent, a flow rate adjusting unit, and the like.

In the present embodiment, the first arm 121 supporting the protective film material nozzle 130 and the second arm 122 supporting the solvent nozzle 140 are attached to the same rail 120, but are attached to different rails. May be. Further, although the protective film material nozzle 130 and the solvent nozzle 140 are supported by separate arms 121 and 122, respectively, they may be supported by the same arm.

Next, wafer processing as a processing method performed by using the processing system 1 configured as described above will be described.

First, the cassette Cw containing the plurality of processing wafers W, the cassette Cs containing the plurality of support wafers S, and the empty cassette Ct are placed on the cassette mounting table 10 of the loading / unloading station 2.

Next, the processing wafer W in the cassette Cw is taken out by the wafer transfer device 20 and transferred to the transition device 70 of the processing station 3. Subsequently, the processing wafer W of the transition device 70 is taken out by the wafer transfer device 81 and transferred to the protective film forming device 30 of the first processing block G1.

In the protective film forming apparatus 30, as shown in FIG. 8A, the protective film material is spin-coated from the protective film material nozzle 130 on the processed wafer W held on the spin chuck 110, and is applied to the surface of the oxide film Fw. A protective film Wp is formed. As the protective film material, for example, a water-soluble material is selected.

Here, when the protective film material is spin-coated as shown in FIG. 8A, the applied protective film material may wrap around the back surface Wb via the end portion of the processed wafer W. When the protective film material wraps around the back surface of the processed wafer W in this way, the transfer arm 82 of the wafer transfer device 81 holds the vicinity of the end portion of the back surface Wb of the processed wafer W as described above, so that the protective film material wraps around. The protective film material may contaminate the transport arm 82.

Therefore, when spin-coating the protective film material in the protective film forming apparatus 30, it is desirable to remove the protective film material that wraps around to the back surface Wb side through the end portion of the processed wafer W by spin coating. Specifically, as shown in FIG. 8B, when the protective film material is spin-coated, the solvent is applied to the outer peripheral portion of the oxide film Fw from the solvent nozzle 140, for example, pure water in the present embodiment. Supply. As a result, it is possible to prevent the protective film material from wrapping around the back surface Wb of the processed wafer W, and to appropriately form the protective film Wp as shown in FIG. 8C.

The forming range of the protective film Wp may coincide with the forming range of the oxide film Fw in a plan view as shown in FIG. 8 (c), but it is larger than the forming range of the oxide film Fw as shown in FIG. May be small. In other words, the outer peripheral portion Wpe of the protective film Wp may be removed by the solvent applied from the solvent nozzle 190 as shown in FIG.

When the protective film Wp is formed, the processed wafer W is transferred to the pretreatment device 40 by the wafer transfer device 81.

In the pretreatment apparatus 40, as shown in FIG. 10, the processed region Fwe of the oxide film Fw is irradiated with the laser beam. As a result, the portion of the surface of the oxide film Fw where the laser light is focused is removed or roughened (hereinafter, "removal" and "roughening" by the laser light are collectively referred to as "modification"). A modified surface Fm is formed. Then, in the processing region Fwe on which the modified surface Fm is formed, the bonding with the support wafer S is not performed in the subsequent bonding apparatus 60, and the bonding region is formed on the polymerized wafer T.

In the pretreatment in the pretreatment device 40, particles P are generated as shown in FIG. The generated particles P may adhere to the surface of the oxide film Fw and cause voids to be generated when the support wafer S is bonded to the oxide film Fs. However, in the wafer processing according to the present embodiment, since the protective film Wp is formed on the surface of the oxide film Fw, it is possible to appropriately suppress the adhesion of the particles P to the oxide film Fw.

When the modified surface Fm is formed, the processed wafer W is transferred to the cleaning device 50 by the wafer transfer device 81.

The cleaning device 50 removes the protective film Wp formed by the protective film forming device 30. The protective film Wp is removed, for example, by spin-coating the protective film Wp with a solvent G for removing the protective film Wp. The solvent is selected according to the material of the protective film Wp formed on the oxide film Fw, and for example, pure water is selected in this embodiment.

Then, when removing the protective film Wp, as shown in FIG. 11, the particles P adhering to the protective film Wp in the above-mentioned pretreatment are removed together with the protective film Wp.

When the protective film Wp is removed, the processed wafer W is transferred to the bonding device 60 by the wafer transfer device 81. Further, the support wafer S is taken out from the cassette Cs and conveyed to the joining device 60 via the transition device 70.

When a plurality of devices are formed on the surface Sa of the support wafer S, the protective film is formed, the pretreatment, and the cleaning of the protective film are sequentially performed on the support wafer S as well as the processing wafer W. You may be disappointed.

In the joining device 60, the processed wafer W and the supporting wafer S are held in the holding portion so that the surfaces Wa and Sa on which the oxide films Fw and Fs are formed face each other. Then, in such a state, the oxide films Fw and Fs are brought into contact with each other from the central portion, and the bonding is gradually performed toward the outer peripheral portion to form the polymerized wafer T.

It is preferable that the oxide films Fw and Fs are hydrophilized and modified prior to bonding. Such hydrophilization and modification can be performed at any place, and may be performed outside the processing system 1 or inside. Further, it may be performed outside the joining device 60, or it may be performed inside.

Here, since the modified surface Fm is formed in the processed region Fwe as described above, the oxide films Fw and Fs are not bonded, and the bonding region and the bonding region are formed at the interface between the oxide films Fw and Fs. Will be done. Specifically, a bonding region is formed in the central portion of the oxide film Fw in which the modified surface Fm is not formed, and a bonding region is formed in the processed region Fwe in which the modified surface Fm is formed.

Next, the formed polymerized wafer T is transferred to the transition device 70 by the wafer transfer device 81. Then, the polymerized wafer T conveyed to the transition device 70 is conveyed to the cassette Ct by the wafer transfer device 20, and a series of wafer processing in the processing system 1 is completed.

The polymerized wafer T carried out from the processing system 1 is transported to a device for performing edge trimming (not shown), for example, a peripheral edge removing device. Then, as shown in FIG. 2, after the internal modified layer M is formed along the boundary between the bonded region and the bonded region, the peripheral edge We is removed along the internal modified layer M (edge trim). ). At the time of such edge trimming, since the bonding region is formed on the outer peripheral portion of the oxide film Fw as described above, the peripheral edge portion We can be appropriately removed.

In such edge trimming, the peripheral edge portion We as a removal target may be performed together with the thinning of the processed wafer W. Specifically, in the peripheral edge removing device, as shown in FIG. 12A, the internal surface modification layer M1 is formed in addition to the internal modification layer M. Then, as shown in FIG. 12B, the processed wafer W is separated into the first separation wafer W1 and the second separation wafer W2 with the internal modification layer M and the internal surface modification layer M1 as base points. At this time, the peripheral edge portion We is attached to the second separation wafer W2 and integrated, and the peripheral edge portion We is removed from the first separation wafer W1.

According to the above embodiment, by forming the protective film Wp on the surface of the oxide film Fw, it is possible to suppress the particles generated by the pretreatment from adhering to the oxide film Fw, and the particles adhered together with the protective film Wp. Can be removed. As a result, the generation of voids at the time of joining the processed wafer W and the supporting wafer S can be suppressed, and the joining can be appropriately performed.

Further, in the protective film forming apparatus 30, in order to remove the protective film material that wraps around the back surface Wb from the end portion of the processed wafer W by the solvent applied from the solvent nozzle 140, the wafer transfer apparatus that holds the processed wafer W from below. It is possible to prevent the protective film material from adhering to 81. Since the protective film material does not adhere to the wafer transfer device 81 in this way, it is possible to suppress the occurrence of so-called cross-contamination that contaminates other processed wafers W via the wafer transfer device 81.

According to the present embodiment, the solvent nozzle 140 is arranged above the spin chuck 110, and the solvent is supplied from above to the outer peripheral portion of the oxide film Fw, but the arrangement of the solvent nozzle 140 is not limited to this. For example, the solvent nozzle 140 that supplies the solvent in the protective film forming apparatus 30 is arranged below the spin chuck 110, that is, on the back surface Wb side of the processing wafer W held by the spin chuck 110, as shown in FIG. May be good.

Further, the protective film Wp is formed to prevent particles from adhering to the oxide film Fw as described above. Therefore, when the outer peripheral portion Wpe of the protective film Wp is removed as shown in FIG. 9, the radial width of the outer peripheral portion Wpe to be removed is modified in the pretreatment device 40 as shown in FIG. It is desirable that it is smaller than the radial width of the quality surface Fm. That is, it is desirable that the width of the outer peripheral portion Wpe from which the protective film Wp is removed is determined so that particles can be prevented from adhering to the oxide film Fw exposed by removing the outer peripheral portion Wpe.

According to the above embodiment, a water-soluble material was selected as the protective film material, but it suppresses the adhesion of particles generated in the pretreatment to the oxide film Fw and affects the oxide film Fw. Any material can be used as long as it does not give.

Further, the solvent supplied from the solvent nozzle 140 or the solvent supplied in the cleaning device 50 is arbitrary as long as it can appropriately remove the protective film Wp, depending on the material of the protective film Wp. Solvents such as TMAH and DHF can be selected.

According to the above embodiment, the generation of voids in the bonding is suppressed by appropriately removing the attached particles, but the pretreatment device 40 is configured so as to further reduce the amount of the attached particles. You may.

Specifically, as shown in FIG. 15A, for example, the pretreatment apparatus 40 may be provided with a fluid nozzle 47 as a fluid supply unit for diffusing the particles P. The fluid nozzle 47 is provided, for example, above the peripheral edge We of the processing wafer W. Further, for example, pure water, gas, or the like is supplied from the fluid nozzle 47, and the generated particles P can be diffused outward in the radial direction. As a result, it is possible to prevent the generated particles P from scattering inward in the radial direction of the processed wafer W and adhering to the surface of the protective film Wp. The fluid nozzle 47 may be further provided, for example, above the central portion of the processing wafer W or on the back surface Wb side of the processing wafer W in order to more reliably disperse the generated particles P outward in the radial direction. ..

Further, the configuration of the pretreatment device 40 may be any configuration as long as the generated particles P can be scattered in the outer peripheral direction, and is not limited to the configuration described above. For example, as shown in FIG. 15 (b), the inside of the processed wafer W in the radial direction has a positive pressure (“+” in FIG. 15 (b)), and the outside has a negative pressure (“−” in FIG. 15 (b)). The pressure inside the pretreatment device 40 may be controlled as described above. As a result, in the pretreatment apparatus 40, an air flow is formed from the inside to the outside in the radial direction of the processing wafer W, and the generated particles P can be appropriately scattered in the outer peripheral direction. In such a case, by providing a suction mechanism 48 connected to, for example, a vacuum pump, on the radial outside of the end portion of the processing wafer W, it is possible to more appropriately form an air flow from the radial inside to the outside. it can.

According to the above embodiment, the protective film is formed and removed to prevent the particles generated in the pretreatment from adhering to the oxide film Fw, but the countermeasures for the particles generated in the pretreatment are not limited to this.

FIG. 16 is a plan view schematically showing an outline of the configuration of the processing system 200 according to the second embodiment. In the present embodiment, the elements having substantially the same functional configuration as the processing system 1 according to the first embodiment are designated by the same reference numerals to omit duplicate description.

A liquid processing apparatus 210 is arranged in the first processing block G1 of the processing station 3 according to the present embodiment. Further, a cleaning device 50 and a joining device 60 are arranged in the second processing block G2. The number and arrangement of the liquid treatment device 210, the cleaning device 50, and the joining device 60 are not limited to this.

As shown in FIG. 17, the liquid treatment apparatus 210 has a chuck 211 that holds the processing wafer W in a state where the oxide film Fw faces upward. The chuck 211 is configured to be rotatable around a vertical axis by a rotation mechanism 212. Above the chuck 211, a nozzle 220 for applying the etching solution E to the outer peripheral portion of the oxide film Fw is provided. The nozzle 220 communicates with an etching solution supply source (not shown) that stores and supplies the etching solution E. Further, the nozzle 220 is configured to be movable in the X-axis direction, the Y-axis direction and the Z-axis direction by a moving mechanism (not shown).

In the liquid processing apparatus 210, the etching solution E is supplied from the nozzle 220 to the surface of the processed wafer W after the pretreatment is performed. As a result, as shown in FIG. 18, the particles generated by the pretreatment and adhering to the surface of the oxide film Fw are removed by the etching solution E.

According to this embodiment, particles adhering to the oxide film Fw can be appropriately removed without forming a protective film Wp on the oxide film Fw. As a result, it is possible to suppress the generation of voids caused by particles in the bonding.

Any material can be selected as the etching solution E supplied from the nozzle 220, but it is most desirable to select a material that removes only particles and does not affect the oxide film Fw.

Further, for example, when the etching solution may remove not only the particles but also the oxide film Fw, it is desirable to control the removal of the particles and the oxide film Fw by controlling the supply amount of the etching solution E and the like.

The configuration of the processing system for processing the processing wafer W is not limited to the configuration examples shown in the above first embodiment and the second embodiment, and any configuration can be adopted. For example, in a processing system, only preprocessing may be performed. In such a case, only the protective film forming device 30, the pretreatment device 40, and the cleaning device 50 are arranged in the processing system, and the processing wafer W and the support wafer S are joined outside the processing system. Alternatively, only the pretreatment device 40 and the liquid treatment device 210 may be arranged in the treatment system.

Further, for example, the processing system may be further provided with a peripheral edge removing device or a processing device for performing edge trimming as described above.

It should be considered that the embodiments disclosed this time are exemplary in all respects and not restrictive. The above embodiments may be omitted, replaced or modified in various forms without departing from the scope of the appended claims and their gist.

For example, in the above embodiment, the case where the shape of the processed wafer W before and after the processing is a disk shape is described as an example, but the shape of the processed wafer W is not limited to this. For example, the processing wafer W may be square (square).

1 Processing system 40 Pretreatment equipment 44 Laser irradiation unit 50 Cleaning equipment Fw Oxide film Fwe Processing area W Processing wafer

Claims (20)

A substrate processing system that processes substrates
A surface film is formed on the substrate,
An outer peripheral reformer that reforms the outer peripheral portion of the surface film,
A removal device that removes particles generated by modifying the outer peripheral portion of the surface film, and
A substrate processing system including a control device for controlling the operation of the outer peripheral reformer and the removal device. The substrate processing system according to claim 1, wherein the control device controls the removing device so that the particles are removed by wet etching of the surface film. A protective film forming apparatus for forming a protective film on the surface film is included.
The substrate processing system according to claim 1, wherein the operation of the protective film forming apparatus is controlled by the control apparatus. The substrate processing system according to claim 3, wherein the protective film forming apparatus includes an outer peripheral removing portion for removing the outer peripheral portion of the protective film. The substrate processing system according to claim 3 or 4, wherein the control device controls the removal device so as to remove the particles by removing the protective film. The control device
The substrate processing system according to claim 5, wherein in the protective film forming apparatus, the outer peripheral modifying apparatus, and the removing apparatus, the processing of the substrate is controlled so that the processing of the substrate is performed in this order. The substrate processing system according to any one of claims 1 to 6, wherein the outer peripheral reforming apparatus includes a fluid supply unit that supplies a fluid to the outer peripheral portion of the surface film during the reforming process. The substrate processing system according to claim 7, wherein the control device controls a flow from the radial inner side to the radial outer side of the substrate formed inside the outer peripheral reforming apparatus by the fluid supply unit. .. The substrate processing system according to any one of claims 1 to 8, wherein the outer peripheral modifying apparatus includes a laser irradiation unit that irradiates the surface of the surface film with a laser to modify the outer peripheral portion of the surface film. .. Any one of claims 1 to 9, including a joining device for joining the surface film of the substrate whose outer peripheral portion has been modified by the outer peripheral modifying device and another surface film formed on the other substrate. The substrate processing system described in. It is a substrate processing method that processes a substrate.
A surface film is formed on the substrate,
Modifying the outer peripheral portion of the surface film and
A substrate treatment method comprising removing particles generated by modification of the outer peripheral portion of the surface film. The substrate processing method according to claim 11, wherein the removal of the particles is performed by wet etching the surface film. The substrate processing method according to claim 11, further comprising forming a protective film on the surface film before modifying the outer peripheral portion. The substrate processing method according to claim 13, which comprises removing the outer peripheral portion of the protective film. The substrate processing method according to claim 13 or 14, wherein the removal of the particles is performed by removing the protective film. In the protective film forming apparatus, the protective film is formed and the outer peripheral portion of the protective film is removed in sequence.
Then, the substrate is conveyed from the protective film forming apparatus to the outer peripheral reforming apparatus, and the substrate is conveyed.
In the outer peripheral reformer, the outer peripheral portion of the surface film is reformed.
After that, the substrate is conveyed from the outer peripheral reformer to the removal device, and the substrate is transferred.
The substrate processing method according to claim 15, wherein in the removing device, the particles are removed by removing the protective film. The substrate processing method according to any one of claims 11 to 16, wherein a fluid is supplied to the outer peripheral portion of the surface film during the modification treatment of the surface film. The substrate processing method according to claim 17, wherein a flow is formed from the radial inner side to the radial outer side of the substrate by a fluid during the modification treatment of the surface film. The substrate processing method according to any one of claims 11 to 18, which comprises joining the surface film of the substrate whose outer peripheral portion has been modified to another surface film formed on the other substrate. .. The substrate processing method according to claim 19, further comprising removing the peripheral edge of the substrate having the outer peripheral portion modified.

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