JP2020064991A - Wafer processing method - Google Patents

Abstract

To form a device chip without deteriorating quality.SOLUTION: A wafer processing method for dividing a wafer in which a plurality of devices are formed on a surface into individual device chips comprises a polyester-based sheet arranging step, an integrating step, a frame supporting step, a dividing step, and a picking-up step. The polyester-based sheet arranging step arranges a polyester-based sheet on a rear surface of the wafer. The integrating step heats and presses the polyester-based sheet, and integrates the wafer and the polyester-based sheet. The frame supporting step supports the polyester-based sheet by a frame composed of a first frame including an opening and a plurality of magnets and a second frame including an opening by holding an outer periphery of the polyester-based sheet between the first frame and the second frame by a magnetic force using the frame. The dividing step forms a division groove along division schedule lines and divides the wafer into individual device chips. The picking-up step picks up individual device chips.SELECTED DRAWING: Figure 4

Description

  The present invention relates to a wafer processing method for dividing a wafer, which is formed in each region of a surface in which a plurality of devices are divided by dividing lines, into individual device chips.

  In the manufacturing process of device chips used in electronic devices such as mobile phones and personal computers, first, a plurality of planned dividing lines (streets) are set on the surface of a wafer made of a material such as a semiconductor. Then, devices such as ICs (Integrated Circuits), LSIs (Large-Scale Integrated circuits), and LEDs (Light Emitting Diodes) are formed in the respective areas divided by the planned dividing lines.

  After that, an adhesive tape called a dicing tape attached so as to close the opening in an annular frame having an opening is attached to the back surface of the wafer, and the wafer, the adhesive tape, and the annular frame are integrated. Forming a frame unit. Then, when the wafer included in the frame unit is processed and divided along the dividing lines, individual device chips are formed.

  A laser processing device is used for dividing the wafer, for example (see Patent Document 1). The laser processing apparatus includes a chuck table that holds the wafer via an adhesive tape, and a laser processing unit that irradiates the wafer with a laser beam having a wavelength having an absorptivity for the wafer.

  When dividing the wafer, a frame unit is placed on the chuck table and the wafer is held on the chuck table via an adhesive tape. Then, while the chuck table and the laser processing unit are relatively moved along a direction parallel to the upper surface of the chuck table, the laser processing unit irradiates the wafer with the laser beam. When the laser beam is irradiated, a dividing groove is formed in the wafer along each dividing line by ablation, and the wafer is divided.

  After that, the frame unit is carried out from the laser processing apparatus, and the adhesive tape is subjected to a treatment such as irradiation with ultraviolet rays to reduce the adhesive force of the adhesive tape, and the device chip is picked up. As a processing device with high production efficiency of device chips, a processing device is known that can divide a wafer and irradiate an ultraviolet ray to an adhesive tape continuously by one device (see Patent Document 2). The device chip picked up from the adhesive tape is mounted on a predetermined wiring board or the like.

JP, 10-305420, A Japanese Patent No. 3076179

  The adhesive tape includes, for example, a base material layer formed of a vinyl chloride sheet or the like and a glue layer disposed on the base material layer. In the laser processing apparatus, in order to surely divide the wafer by ablation processing, the wafer is irradiated with the laser beam under the condition that the dividing groove from the front surface to the back surface of the wafer can be surely formed. Therefore, below or around the formed dividing groove, the glue layer of the adhesive tape is melted by the thermal effect of laser beam irradiation, and a part of the glue layer is formed on the back surface side of the device chip formed from the wafer. Stick to it.

  In this case, when the device tape is picked up from the adhesive tape, even if a treatment such as irradiating the adhesive tape with ultraviolet rays is performed, the part of the glue layer remains on the back surface side of the picked-up device chip. . Therefore, the deterioration of the quality of the device chip becomes a problem.

  The present invention has been made in view of the above problems, and an object thereof is that the adhesive layer does not adhere to the back surface side of the device chip to be formed, and the quality derived from the adhesion of the adhesive layer to the device chip is improved. It is an object of the present invention to provide a wafer processing method that does not cause deterioration.

  According to one aspect of the present invention, a plurality of devices is a wafer processing method for dividing a wafer formed in each region of the front surface partitioned by a planned dividing line into individual device chips, and Before the step of arranging the polyester sheet, the step of arranging the polyester sheet, the step of heating and pressing the polyester sheet to integrate the wafer with the polyester sheet, Alternatively, later, a frame including a first frame having an opening having a size capable of accommodating the wafer and including a plurality of magnets, and a second frame having an opening having a size capable of accommodating the wafer. And the outer peripheral portion of the polyester sheet is sandwiched between the first frame and the second frame by the magnetic force generated by the magnet. A frame supporting step of supporting the polyester sheet with the frame, and irradiating the wafer with a laser beam having a wavelength having an absorptivity for the wafer along the dividing line to form a dividing groove to form the wafer. A method for processing a wafer is provided, which comprises a dividing step of dividing into individual device chips and a pickup step of picking up the individual device chips from the polyester sheet.

  Further, preferably, in the pick-up step, the polyester sheet is expanded to widen the gap between the device chips, and the device chip is pushed up from the polyester sheet side.

  Further, preferably, the polyester sheet is either a polyethylene terephthalate sheet or a polyethylene naphthalate sheet.

  Further preferably, in the integration step, in the integration step, when the polyester sheet is the polyethylene terephthalate sheet, the heating temperature is 250 ° C to 270 ° C, and the polyester sheet is the polyethylene naphthalate. In the case of a sheet, the heating temperature is 160 ° C to 180 ° C.

  Also, preferably, the wafer is made of any one of Si, GaN, GaAs, and glass.

  In the method of processing a wafer according to one aspect of the present invention, the frame and the wafer are integrated with each other by using a polyester-based sheet having no adhesive layer, without using an adhesive tape having an adhesive layer in the frame unit. The integration step of integrating the polyester sheet and the wafer is realized by heating and pressing.

  A wafer processing method according to an aspect of the present invention includes a first frame having an opening having a size capable of accommodating a wafer and a second frame having an opening having a size capable of accommodating a wafer. Frame is used. The first frame includes a plurality of magnets, and the first frame and the second frame are attracted to each other by the magnetic force generated by the magnets.

  Then, in the frame supporting step, a polyester sheet is arranged between the first frame and the second frame, and the polyester sheet is sandwiched between the first frame and the second frame and the polyester sheet is sandwiched between the first frame and the second frame. The polyester sheet can be supported by the frame.

  That is, even if the polyester-based sheet does not have a glue layer, the wafer, the polyester-based sheet, and the frame can be integrated to form a frame unit by performing the integration step and the frame supporting step. .

  After that, the wafer is irradiated with a laser beam having a wavelength having an absorptivity to the wafer, and the wafer is divided by ablation to form a dividing groove along the dividing line. Then, the device chip is picked up from the polyester sheet. The picked-up device chips are respectively mounted on predetermined mounting targets.

  When the ablation process is performed on the wafer, the heat generated by the irradiation of the laser beam is transferred to the polyester sheet below and in the vicinity of the dividing groove. However, since the polyester sheet does not have a glue layer, the glue layer does not melt and stick to the back surface side of the device chip.

  That is, according to one aspect of the present invention, since the frame unit can be formed using the polyester-based sheet having no glue layer, an adhesive tape having a glue layer is unnecessary, and as a result, a device resulting from the adhesion of the glue layer. No deterioration of chip quality occurs.

  Therefore, according to one aspect of the present invention, there is provided a wafer processing method in which the glue layer does not adhere to the back surface side of the device chip to be formed, and the deterioration in quality due to the adhesion of the glue layer to the device chip does not occur. .

It is a perspective view which shows a wafer typically. It is a perspective view which shows typically a mode that a wafer is positioned on the holding surface of a chuck table. It is a perspective view which shows a polyester sheet | seat arrangement process typically. It is a perspective view which shows an example of an integrated process typically. FIG. 5 (A) is a perspective view schematically showing the frame supporting step, and FIG. 5 (B) is a perspective view schematically showing the formed frame unit. It is a perspective view which shows a dividing process typically. It is a perspective view which shows typically the carrying in of the frame unit to a pick-up apparatus. FIG. 8A is a cross-sectional view schematically showing the frame unit fixed on the frame support base, and FIG. 8B is a cross-sectional view schematically showing the pickup process.

  An embodiment according to an aspect of the present invention will be described with reference to the accompanying drawings. First, a wafer processed by the wafer processing method according to this embodiment will be described. FIG. 1 is a perspective view schematically showing the wafer 1.

  The wafer 1 is made of, for example, Si (silicon), SiC (silicon carbide), GaN (gallium nitride), GaAs (gallium arsenide), or other semiconductor material, or sapphire, glass, quartz, or other material. The substrate is a substantially disk-shaped substrate or the like. The glass is, for example, alkali glass, non-alkali glass, soda-lime glass, lead glass, borosilicate glass, quartz glass, or the like.

  The front surface 1a of the wafer 1 is partitioned by a plurality of planned dividing lines 3 arranged in a grid pattern. In addition, devices 5 such as ICs, LSIs, LEDs, etc. are formed in each area of the front surface 1a of the wafer 1 divided by the planned dividing line 3. In the method of processing the wafer 1 according to the present embodiment, a dividing groove is formed in the wafer 1 along the dividing line 3 by ablation processing to divide the wafer 1 to form individual device chips.

  Before the wafer 1 is loaded into the laser processing apparatus 6 (see FIG. 6) where the ablation process is performed, the wafer 1, the polyester sheet, and the frame are integrated to form a frame unit. The wafer 1 is carried into the laser processing apparatus in the state of the frame unit and processed. The formed individual device chips are supported by a polyester sheet. Then, the polyester sheet is expanded to widen the gap between the device chips, and the device chips are picked up by the pickup device.

  The annular frame 7 (see FIGS. 5A and 5B, etc.) is formed of, for example, a material such as metal and has a first frame 7a having an opening 7b having a size capable of accommodating the wafer 1. , A second frame 7f having an opening 7g having a size capable of accommodating the wafer 1, and a second frame 7f. For example, the first frame 7a and the second frame 7f have substantially the same shape.

  The first frame 7a includes a plurality of pins 7d on the upper surface 7c. A plurality of magnets 7e are embedded and arranged on the upper surface 7c of the first frame 7a. The second frame 7f is provided with a plurality of through holes 7i penetrating in the thickness direction. When the first frame 7a and the second frame 7f are overlapped with each other, the pin 7d of the first frame 7a is fitted into the through hole 7i, so that the through hole of the second frame 7f is formed. 7i are formed in the number, position and size corresponding to the pins 7d of the first frame 7a.

  The polyester-based sheet 9 (see FIG. 3 and the like) is a flexible resin-based sheet and has flat front and back surfaces. The polyester sheet 9 has a diameter larger than the diameter of the opening 7b of the first frame 7a and the opening 7g of the second frame 7f that form the frame 7, and does not include a glue layer. The polyester sheet 9 is a polymer sheet synthesized by using dicarboxylic acid (compound having two carboxyl groups) and diol (compound having two hydroxyl groups) as monomers. For example, a polyethylene terephthalate sheet, or , A sheet such as a polyethylene naphthalate sheet which is transparent or translucent to visible light. However, the polyester sheet 9 is not limited to this, and may be opaque.

  Since the polyester sheet 9 does not have adhesiveness, it cannot be attached to the wafer 1 at room temperature. However, since the polyester-based sheet 9 has thermoplasticity, it can be partially melted and adhered to the wafer 1 when heated to a temperature near the melting point while being bonded to the wafer 1 while applying and pressing a predetermined pressure.

  In the method for processing the wafer 1 according to the present embodiment, the polyester sheet 9 is adhered to the back surface 1b side of the wafer 1 by heating and pressing, and the outer peripheral portion of the polyester sheet 9 is covered with the first frame 7a and the second frame. The frame unit is formed by being sandwiched between 7f and.

  Next, each step of the method for processing the wafer 1 according to this embodiment will be described. First, in order to prepare the wafer 1 and the polyester sheet 9 to be integrated with each other, a polyester sheet arranging step is performed. FIG. 2 is a perspective view schematically showing how the wafer 1 is positioned on the holding surface 2 a of the chuck table 2. As shown in FIG. 2, the polyester sheet arranging step is performed on the chuck table 2 having the holding surface 2a on the upper portion.

  The chuck table 2 has a porous member having a diameter larger than the outer diameter of the wafer 1 at the center of the upper portion. The upper surface of the porous member serves as the holding surface 2a of the chuck table 2. As shown in FIG. 3, the chuck table 2 has an exhaust passage inside which one end communicates with the porous member, and a suction source 2b is arranged on the other end side of the exhaust passage. A switching unit 2c for switching between a communication state and a disconnection state is arranged in the exhaust passage, and when the switching unit 2c is in the communication state, a negative force generated by the suction source 2b is generated on the held object placed on the holding surface 2a. The pressure acts and the held object is suction-held on the chuck table 2.

  In the polyester sheet arranging step, first, as shown in FIG. 2, the wafer 1 is placed on the holding surface 2 a of the chuck table 2. At this time, the front surface 1a side of the wafer 1 is directed downward. Next, the polyester sheet 9 is disposed on the back surface 1b of the wafer 1. FIG. 3 is a perspective view schematically showing the polyester sheet arranging step. As shown in FIG. 3, a polyester sheet 9 is provided on the wafer 1 so as to cover the wafer 1.

  In the polyester sheet arranging step, the chuck table 2 having the holding surface 2a having a diameter smaller than that of the polyester sheet 9 is used. When the negative pressure by the chuck table 2 is applied to the polyester sheet 9 in the integration step to be performed later, the negative pressure will leak from the gap unless the entire holding surface 2a is covered with the polyester sheet 9. This is because the pressure cannot be properly applied to the polyester sheet 9.

  In the method of processing the wafer 1 according to the present embodiment, next, the polyester-based sheet 9 is heated and pressed to perform an integration step of integrating the wafer 1 and the polyester-based sheet 9. FIG. 4 is a perspective view schematically showing an example of the integration process. In FIG. 4, what is visible through the polyester sheet 9 that is transparent or translucent to visible light is indicated by a broken line.

  In the integration step, first, the switching portion 2c of the chuck table 2 is operated to establish a communication state in which the suction source 2b is connected to the porous member above the chuck table 2, and the negative pressure by the suction source 2b is applied to the polyester sheet 9. Let it work. Then, the polyester sheet 9 is brought into close contact with the wafer 1 by the atmospheric pressure.

  Next, the polyester sheet 9 is heated and pressed while sucking the polyester sheet 9 by the suction source 2b to perform thermocompression bonding. The heating and pressing of the polyester-based sheet 9 are performed, for example, by pressing the wafer 1 from above with a member heated to a predetermined temperature. In the integration step, for example, the heat roller 4 having a heat source inside is used.

  The heat roller 4 is heated to a predetermined temperature, and the heat roller 4 is placed on one end of the holding surface 2a of the chuck table 2. Then, the heat roller 4 is rotated, and the heat roller 4 is rolled on the chuck table 2 from the one end to the other end. Then, the polyester sheet 9 is thermocompression bonded to the wafer 1. At this time, when a force is applied by the heat roller 4 in a direction to push down the polyester sheet 9, thermocompression bonding is performed at a pressure higher than atmospheric pressure. The surface of the heat roller 4 is preferably covered with a fluororesin.

  Further, an iron-like pressing member having a heat source inside and having a flat bottom plate may be used in place of the heat roller 4 to heat and press the polyester sheet 9. In this case, the bottom plate of the pressing member is heated to a predetermined temperature to form a hot plate, and the polyester sheet 9 held on the chuck table 2 is pressed from above by the pressing member.

  After thermocompression-bonding the polyester-based sheet 9, the switching unit 2c is operated to release the communication state between the porous member of the chuck table 2 and the suction source 2b, and the suction by the chuck table 2 is released.

  When the thermocompression bonding is performed, the polyester sheet 9 is preferably heated to a temperature below its melting point. This is because if the heating temperature exceeds the melting point, the polyester sheet 9 may melt and the sheet shape may not be maintained. Further, the polyester sheet 9 is preferably heated to a temperature equal to or higher than its softening point. This is because thermocompression bonding cannot be properly performed unless the heating temperature reaches the softening point. That is, the polyester sheet 9 is preferably heated to a temperature equal to or higher than its softening point and equal to or lower than its melting point.

  Furthermore, some polyester-based sheets 9 may not have a clear softening point. Therefore, when the thermocompression bonding is performed, the polyester sheet 9 is preferably heated to a temperature that is 20 ° C. lower than the melting point and lower than the melting point.

  When the polyester sheet 9 is a polyethylene terephthalate sheet, the heating temperature is preferably 250 ° C to 270 ° C. When the polyester sheet 9 is a polyethylene naphthalate sheet, the heating temperature is preferably 160 ° C to 180 ° C.

  Here, the heating temperature refers to the temperature of the polyester sheet 9 when the integration step is performed. For example, a heat source such as the heat roller 4 has been put into practical use for a model capable of setting the output temperature. Even if the polyester sheet 9 is heated using the heat source, the temperature of the polyester sheet 9 is set. In some cases, the output temperature may not be reached. Therefore, in order to heat the polyester sheet 9 to a predetermined temperature, the output temperature of the heat source may be set higher than the melting point of the polyester sheet 9.

  In the method for processing the wafer 1 according to this embodiment, a frame supporting step of supporting the polyester sheet 9 with the frame 7 is performed before or after the integration step. FIG. 5A is a perspective view schematically showing the frame supporting step. In the frame supporting step, the polyester sheet 9 is supported by the frame 7 by sandwiching the outer peripheral portion of the polyester sheet 9 between the first frame 7a and the second frame 7f.

  First, the polyester sheet 9 is placed on the upper surface 7c of the first frame 7a. At this time, the position of the polyester sheet 9 is determined so as to block all the openings 7b of the first frame 7a. Next, the second frame 7f is placed on the polyester sheet 9 with the lower surface 7h facing downward. At this time, the position of the second frame 7f is determined so that the through hole 7i of the second frame 7f is fitted into the pin 7d of the first frame 7a.

  When the first frame 7a and the second frame 7f are overlapped with each other, a magnetic force generated by the plurality of magnets 7e included in the first frame 7a acts to draw the two frames toward each other, and the outer peripheral portion of the polyester sheet 9 is It is sandwiched between both frames. Therefore, the polyester sheet 9 is supported by the frame 7. At this time, since the pin 7d of the first frame 7a is fitted into the through hole 7i of the second frame 7f, the first frame 7a and the second frame 7f do not shift in the horizontal direction.

  Although the case where the frame supporting step is performed after the integration step has been described, the wafer processing method according to the present embodiment is not limited to this. For example, the integration step may be performed after the frame supporting step. In this case, the outer peripheral portion of the polyester sheet 9 is adhered to the first frame 7a and the second frame 7f by the heating in the integration step, and the polyester sheet 9 is supported by the frame 7 with a stronger force.

  Next, in the wafer processing method according to the present embodiment, the wafer 1 in the state of the frame unit 11 is subjected to ablation processing to form a division groove along the division line 3 to divide the wafer 1. Carry out the process. The dividing step is performed by, for example, the laser processing apparatus shown in FIG. FIG. 6 is a perspective view schematically showing the dividing step.

  The laser processing device 6 includes a laser processing unit 8 that ablates the wafer 1, and a chuck table (not shown) that holds the wafer 1. The laser processing unit 8 includes a laser oscillator (not shown) that can oscillate a laser, and can emit a laser beam 10 having a wavelength that has an absorptivity for the wafer 1 (a wavelength that the wafer 1 can absorb). The chuck table can be moved (working feed) along a direction parallel to the upper surface.

  The laser processing unit 8 irradiates the wafer 1 held on the chuck table with the laser beam 10 emitted from the laser oscillator. The processing head 8 a included in the laser processing unit 8 has a mechanism that focuses the laser beam 10 on the wafer 1 at a predetermined height position.

  When the wafer 1 is ablated, the frame unit 11 is placed on the chuck table, and the wafer 1 is held on the chuck table via the polyester sheet 9. Then, the chuck table is rotated to align the planned dividing line 3 of the wafer 1 with the processing feed direction of the laser processing device 6. Further, the relative positions of the chuck table and the laser processing unit 8 are adjusted so that the processing head 8a is arranged above the extension line of the planned dividing line 3.

  Next, while irradiating the laser beam 10 from the laser processing unit 8 to the wafer 1, the chuck table and the laser processing unit 8 are relatively moved along a processing feed direction parallel to the upper surface of the chuck table. Then, the wafer 1 is irradiated with the laser beam 10 along the dividing line 3 and the dividing groove 3 a along the dividing line 3 is formed in the wafer 1 by ablation.

The irradiation conditions of the laser beam 10 in the dividing step are set as follows, for example. However, the irradiation condition of the laser beam 10 is not limited to this.
Wavelength: 355nm
Repetition frequency: 50kHz
Average output: 5W
Feed rate: 200 mm / sec

  After performing the ablation process along one planned dividing line 3, the chuck table and the laser processing unit 8 are relatively moved in the indexing feeding direction perpendicular to the machining feeding direction, and along the other dividing line 3 Similarly, the ablation process of the wafer 1 is performed. After forming the dividing grooves 3a along all the dividing lines 3 along one direction, the chuck table is rotated around an axis perpendicular to the holding surface, and along the dividing lines 3 along the other direction. Then, the wafer 1 is similarly ablated.

  When the wafer 1 is ablated along all the planned dividing lines 3 of the wafer 1, the dividing step is completed. When the dividing step is completed and the dividing grooves 3a extending from the front surface 1a to the rear surface 1b along all the planned dividing lines 3 are formed on the wafer 1, the wafer 1 is divided and individual device chips are formed.

  When the ablation processing is performed on the wafer 1 by the laser processing unit 8, processing waste originating from the wafer 1 is generated from the irradiated portion of the laser beam 10, and the processing waste is scattered around the irradiated portion of the wafer 1. Adheres to the surface 1a. Even if the surface 1a of the wafer 1 is cleaned by the cleaning unit described below after the wafer 1 is subjected to the ablation process, it is not easy to completely remove the attached processing waste. If the processing waste remains on the device chip formed from the wafer 1, the quality of the device chip deteriorates.

  Therefore, a water-soluble liquid resin that functions as a protective film that protects the surface 1a of the wafer 1 may be previously applied to the surface 1a of the wafer 1 that is ablated by the laser processing apparatus 6. When the liquid resin is applied to the front surface 1a of the wafer 1, the processing scraps scattered during the ablation process adhere to the upper surface of the liquid resin, so that the processing wastes do not directly adhere to the front surface 1a of the wafer 1. . Then, the processing waste is removed together with the liquid resin by the cleaning unit described next.

  The laser processing device 6 may include a cleaning unit (not shown). In this case, the wafer 1 ablated by the laser processing unit 8 is transferred to the cleaning unit and cleaned by the cleaning unit. For example, the cleaning unit includes a cleaning table that holds the frame unit 11 and a cleaning water supply nozzle that can reciprocate above the frame unit 11.

  The cleaning table is rotated around an axis perpendicular to the holding surface, and while supplying a cleaning liquid such as pure water from the cleaning water supply nozzle to the wafer 1, the cleaning water supply nozzle is horizontally moved along a path passing above the center of the holding surface. When the wafer 1 is reciprocally moved, the front surface 1a side of the wafer 1 can be cleaned.

  In the method of processing the wafer 1 according to this embodiment, next, a pickup step of picking up the individual device chips from the polyester sheet 9 is performed. In the pickup process, the pickup device 12 shown in the lower part of FIG. 7 is used. FIG. 7 is a perspective view schematically showing the loading of the frame unit 11 into the pickup device 12.

  The pickup device 12 includes a cylindrical drum 14 having a diameter larger than the diameter of the wafer 1, and a frame holding unit 16 including a frame support 18. The frame support base 18 of the frame holding unit 16 is provided with an opening having a diameter larger than that of the drum 14, and is arranged at the same height as the upper end of the drum 14, and the upper end of the drum 14 is located on the outer peripheral side. Surround from.

  A clamp 20 is arranged on the outer peripheral side of the frame support base 18. When the frame unit 11 is placed on the frame support 18 and the frame 7 of the frame unit 11 is held by the clamp 20, the frame unit 11 is fixed to the frame support 18.

  The frame support base 18 is supported by a plurality of rods 22 extending in the vertical direction, and an air cylinder 24 for raising and lowering the rods 22 is arranged at the lower end of each rod 22. The plurality of air cylinders 24 are supported by a disc-shaped base 26. When each air cylinder 24 is operated, the frame support 18 is pulled down with respect to the drum 14.

  Inside the drum 14, a push-up mechanism 28 that pushes up the device chip supported by the polyester sheet 9 from below is disposed. Further, a collet 30 (see FIG. 8B) capable of suction-holding the device chip is arranged above the drum 14. The push-up mechanism 28 and the collet 30 are movable in the horizontal direction along the upper surface of the frame support base 18. Further, the collet 30 is connected to the suction source 30a (see FIG. 8B) via the switching unit 30b (see FIG. 8B).

  In the pickup step, first, the air cylinder 24 is operated to adjust the height of the frame support base 18 so that the height of the upper end of the drum 14 of the pickup device 12 and the height of the upper surface of the frame support base 18 are substantially matched. Adjust. For example, the height position of the upper surface of the frame support base 18 may be positioned lower than the upper end of the drum 14 by the thickness of the first frame 7a. Next, the frame unit 11 delivered from the laser processing device 6 is placed on the drum 14 of the pickup device 12.

  After that, the frame 7 of the frame unit 11 is fixed onto the frame support 18 by the clamp 20. FIG. 8A is a sectional view schematically showing the frame unit 11 fixed on the frame support base 18. The wafer 1 is divided by forming a dividing groove 3a in the dividing step.

  Next, the air cylinder 24 is operated to pull down the frame support base 18 of the frame holding unit 16 with respect to the drum 14. Then, as shown in FIG. 8B, the polyester sheet 9 is expanded in the outer peripheral direction. FIG. 8B is a cross-sectional view schematically showing the pickup process.

  When the polyester sheet 9 is expanded in the outer peripheral direction, the intervals between the device chips 1c supported by the polyester sheet 9 are widened. Then, the device chips 1c are less likely to come into contact with each other, and the individual device chips 1c can be easily picked up. Then, the device chip 1c to be picked up is determined, the push-up mechanism 28 is moved below the device chip 1c, and the collet 30 is moved above the device chip 1c.

  Then, the push-up mechanism 28 is operated to push up the device chip 1c from the polyester sheet 9 side. Then, the switching unit 30b is operated to communicate the collet 30 with the suction source 30a. Then, the device chip 1c is suction-held by the collet 30, and the device chip 1c is picked up from the polyester sheet 9. The individual device chips 1c thus picked up are then mounted on a predetermined wiring board or the like for use.

  For example, when the frame unit 11 is formed using an adhesive tape, heat generated by the irradiation of the laser beam 10 in the dividing step is transferred to the adhesive tape, and the glue layer of the adhesive tape is melted and fixed to the back surface side of the device chip. To do. Then, the deterioration of the quality of the device chip due to the adhesion of the glue layer becomes a problem.

  On the other hand, according to the wafer processing method of the present embodiment, it is possible to form a frame unit using a polyester-based sheet that does not have a glue layer by thermocompression bonding, so an adhesive tape having a glue layer is not required. Is. As a result, the quality of the device chip does not deteriorate due to the adhesion of the glue layer on the back surface side.

  It should be noted that the present invention is not limited to the description of the above embodiment, and can be implemented with various modifications. For example, although the case where the polyester sheet 9 is, for example, a polyethylene terephthalate sheet or a polyethylene naphthalate sheet has been described in the above embodiment, one aspect of the present invention is not limited thereto. For example, other materials may be used for the polyester-based sheet, and may be a polytrimethylene terephthalate sheet, a polybutylene terephthalate sheet, a polybutylene naphthalate sheet, or the like.

  In addition, the structures, methods, and the like according to the above-described embodiments can be appropriately modified and implemented without departing from the scope of the object of the invention.

1 wafer 1a front surface 1b back surface 3 planned dividing line 3a dividing groove 5 device 7, 7a, 7f frame 7b, 7g opening 7c upper surface 7d pin 7e magnet 7h lower surface 7i through hole 9 polyester sheet 11 frame unit 2 chuck table 2a holding surface 2b, 30a Suction source 2c, 30b Switching part 4 Heat roller 6 Laser processing device 8 Laser processing unit 8a Processing head 10 Laser beam 12 Pickup device 14 Drum 16 Frame holding unit 18 Frame support 20 Clamp 22 Rod 24 Air cylinder 26 Base 28 Push-up mechanism 30 collet

Claims (5)

A method of processing a wafer, wherein a plurality of devices divides a wafer formed in each region of the surface divided by a dividing line into individual device chips,
A polyester sheet arranging step of arranging a polyester sheet on the back surface of the wafer,
An integration step of heating and pressing the polyester-based sheet to integrate the wafer and the polyester-based sheet,
Before or after the integration step, a first frame having an opening sized to accommodate the wafer and having a plurality of magnets, and a second frame having an opening sized to accommodate the wafer. And the outer peripheral portion of the polyester sheet is sandwiched between the first frame and the second frame by the magnetic force generated by the magnet to form the polyester sheet. A frame supporting step of supporting the frame,
A dividing step of irradiating the wafer with a laser beam having a wavelength having an absorptivity for the wafer along the dividing line to form dividing grooves and dividing the wafer into individual device chips;
A pickup step of picking up the individual device chips from the polyester sheet,
A method for processing a wafer, comprising:   2. The method of processing a wafer according to claim 1, wherein in the pick-up step, the polyester sheet is expanded to widen a space between the device chips, and the device chip is pushed up from the polyester sheet side.   The method for processing a wafer according to claim 1, wherein the polyester-based sheet is either a polyethylene terephthalate sheet or a polyethylene naphthalate sheet.   In the integration step, the heating temperature is 250 ° C. to 270 ° C. when the polyester sheet is the polyethylene terephthalate sheet, and the heating temperature is 160 ° C. when the polyester sheet is the polyethylene naphthalate sheet. The wafer processing method according to claim 3, wherein the temperature is 180 ° C.   The wafer processing method according to claim 1, wherein the wafer is made of any one of Si, GaN, GaAs, and glass.