JP2019134608A - Electric power conversion apparatus - Google Patents

Abstract

To provide an electric power conversion apparatus which can reduce a manufacturing cost and can realize further downsizing.SOLUTION: An electric power conversion apparatus has a semiconductor module 2, a control circuit board 3 controlling an operation of the semiconductor module, a smoothing capacitor 4, and a discharge resistance module 5. The discharge resistance module 5 has built-in constant discharge resistor R, rapid discharge resistor R, and rapid discharging switching element 51. The constant discharge resistor Ris connected to the capacitor 4 in parallel, and is provided for constantly discharging electric charge stored in the capacitor 4. A resistance value of the rapid discharge resistor Ris smaller than that of the constant discharge resistor R. A series body 50 is formed by connecting the constant discharge resistor Rand the rapid discharging switching element 51 in series. The series body 50 is connected to the constant discharge resistor Rin parallel.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a power conversion device including a smoothing capacitor and a discharge resistor for discharging a charge stored in the capacitor.

  2. Description of the Related Art Conventionally, as a power conversion device mounted on a vehicle or the like, a device including a semiconductor module incorporating a switching element such as an IGBT and a control circuit board connected to the semiconductor module is known (see Patent Document 1 below) ). This power converter is configured to turn on and off the switching element using the control circuit board, thereby converting DC power supplied from a DC power source to AC power.

  The power conversion device is provided with a capacitor that smoothes the voltage of the DC power supply and a discharge resistor that discharges the electric charge of the capacitor. The discharge resistance includes a constant discharge resistance that always discharges the charge of the capacitor and a rapid discharge resistance that has a resistance value smaller than that of the constant discharge resistance.

  A rapid discharge switching element is connected in series to the rapid discharge resistor. In an emergency (for example, when the vehicle causes a traffic accident or the like), the control circuit board turns on the rapid discharge switching element. This ensures the safety by discharging the capacitor in a short time. Even if the control circuit board cannot turn on the rapid discharge switching element for some reason, the charge of the capacitor is discharged through the above-described constant discharge resistor. Therefore, after a while, the capacitor voltage decreases. In the power converter, the constant discharge resistance and the rapid discharge resistance are provided separately.

JP 2013-223273 A

  However, in the above power conversion device, the rapid discharge resistance and the constant discharge resistance are separately provided, and therefore the number of parts tends to increase. For this reason, the manufacturing cost of the power converter increases, and the power converter tends to increase in size.

  This invention is made | formed in view of this subject, and it aims at providing the power converter device which can reduce manufacturing cost and can be reduced in size.

One aspect of the present invention is a semiconductor module (2) incorporating a switching element (21);
A control circuit board (3) for controlling the on / off operation of the switching element;
A capacitor (4) for smoothing a DC voltage applied to the semiconductor module;
A discharge resistance module (5) for discharging the charge stored in the capacitor;
The discharge resistance module is
_A continuous discharge resistor (R _A ) connected in parallel to the capacitor and constantly discharging the charge stored in the capacitor;
The normally when the discharge resistor rapid discharge resistance is less resistance than the (R _B), it becomes from a rapid discharge switching element (51) which are connected in series to said acute speed discharge resistor, connected in parallel to the constant discharge resistor in series Body (50),
A power conversion device (1) incorporating

In the power converter, the constant discharge resistor, the rapid discharge resistor, and the rapid discharge switching element are built in one component (discharge resistor module).
Therefore, the number of parts can be reduced. Thereby, it becomes possible to reduce the manufacturing cost of a power converter device. In addition, if the constant discharge resistance, the rapid discharge resistance, and the rapid discharge switching element are combined into one component (that is, a discharge resistance module), the volume of the entire component is reduced compared to the case where these components are formed separately. It becomes easy to do. Therefore, the power converter can be reduced in size.

As described above, according to the above aspect, it is possible to provide a power conversion device that can reduce the manufacturing cost and can be further reduced in size.
In addition, the code | symbol in the parenthesis described in the means to solve a claim and a subject shows the correspondence with the specific means as described in embodiment mentioned later, and limits the technical scope of this invention. It is not a thing.

The circuit diagram of the power converter device in Embodiment 1. FIG. It is sectional drawing of the power converter device in Embodiment 1, Comprising: II-II sectional drawing of FIG. III-III sectional drawing of FIG. IV-IV sectional drawing of FIG. VV sectional drawing of FIG. 1 is a perspective view of a semiconductor module in Embodiment 1. FIG. VII-VII sectional drawing of FIG. FIG. 3 is a detailed circuit diagram of the semiconductor module in the first embodiment. The perspective view of the discharge resistance module in Embodiment 1. FIG. XX sectional drawing of FIG. FIG. 3 is a detailed circuit diagram of the discharge resistance module in the first embodiment. Sectional drawing of the power converter device in Embodiment 2. FIG. The circuit diagram of the power converter device in Embodiment 3. FIG. FIG. 5 is a partially transparent perspective view of a discharge resistance module in Embodiment 3. Sectional drawing of the discharge resistance module in Embodiment 4. FIG. The circuit diagram of the power converter device in Embodiment 5. FIG. Sectional drawing of the discharge resistance module in Embodiment 5. FIG. The detailed circuit diagram of the discharge resistance module in Embodiment 6. FIG. Sectional drawing of the power converter device in Embodiment 6. FIG. The detailed circuit diagram of the discharge resistance module in Embodiment 7. FIG. Sectional drawing of the power converter device in Embodiment 7. FIG. Sectional drawing of the power converter device in a comparison form. XXIII-XXIII sectional drawing of FIG. The circuit diagram of the power converter device in a comparison form.

(Embodiment 1)
An embodiment according to the power conversion device will be described with reference to FIGS. As shown in FIG. 1, the power conversion device 1 of this embodiment includes a semiconductor module 2, a control circuit board 3, a capacitor 4, and a discharge resistance module 5. The semiconductor module 2 includes a switching element 21 (IGBT in this embodiment). The control circuit board 3 controls the on / off operation of the switching element 21. The capacitor 4 smoothes the DC voltage applied to the semiconductor module 2. The discharge resistance module 5 is provided for discharging the electric charge stored in the capacitor 4.

Discharge resistor module 5 incorporates a constant discharge resistor R _A, a rapid discharge resistor R _B, a rapid discharge switching element 51. The constant discharge resistor R _A is connected in parallel to the capacitor 4 and always discharges the charge stored in the capacitor 4. Further, the rapid discharge resistance R _B has a resistance value smaller than that of the constant discharge resistance R _A. The continuous discharge resistor _RA and the rapid discharge switching element 51 are connected in series to form a series body 50. The serial body 50 is always connected in parallel to the discharge resistor _RA .

As shown in FIG. 1, the discharge resistance module 5 includes a pair of voltage detection terminals 53 _P and 53 _N that are electrically connected to the electrodes 43 _P and 43 _N of the capacitor 4, respectively. As shown in FIG. 5, a rapid discharge drive circuit 31 and a voltage measurement circuit 32 are formed on the control circuit board 3. The rapid discharge drive circuit 31 drives the rapid discharge switching element 51. The voltage measurement circuit 32 is provided for measuring the voltage of the capacitor 4. The voltage measurement circuit 32 is electrically connected to a pair of voltage detection terminals 53 _P and 53 _N provided in the discharge resistance module 5.

The power conversion device 1 of this embodiment is a vehicle-mounted power conversion device to be mounted on a vehicle such as an electric vehicle or a hybrid vehicle. As shown in FIG. 1, the power conversion device 1 of this embodiment includes a plurality of semiconductor modules 2. Each semiconductor module 2 incorporates a pair of switching elements 21 of an upper arm switching element 21 _H and a lower arm switching element 21 _L. These switching elements 21 are turned on and off by the control circuit board 3, thereby converting the DC power supplied from the DC power supply 8 into AC power. And the three-phase alternating current motor 81 is driven using the obtained alternating current power, and the said vehicle is drive | worked.

  As shown in FIGS. 2 and 3, in this embodiment, the stacked body 10 is configured by stacking a plurality of semiconductor modules 2 and a plurality of cooling pipes 60. Further, the discharge resistance module 5 is arranged at a position adjacent to the stacked body 10 in the stacking direction (X direction) of the stacked body 10. In this embodiment, the cooling module 60 is used to cool the semiconductor module 2 and the discharge resistance module 5.

Connecting pipes 15 are arranged at both ends of the cooling pipe 60 in the longitudinal direction (Y direction). Using this connecting pipe 15, two cooling pipes 60 adjacent in the X direction are connected. Further, as shown in FIG. 3, among the plurality of cooling pipes 60, the inlet pipe 12 for introducing the refrigerant 14 and the refrigerant 14 are led out to the end cooling pipe 60 _a disposed at one end in the X direction. For this purpose, a lead-out pipe 13 is connected. When the refrigerant 14 is introduced from the introduction pipe 12, the refrigerant 14 flows through all the cooling pipes 60 through the connection pipe 15 and is led out from the outlet pipe 13. Thereby, the semiconductor module 2 and the discharge resistance module 5 are cooled.

  Further, a pressure member 16 (plate spring) is accommodated in the case 11 of the power conversion device 1. Using this pressing member 16, the discharge resistance module 5 and the laminate 10 are pressed in the X direction. Accordingly, the contact pressure between the discharge resistance module 5 and the discharge resistance module 5 and the cooling pipe 60 is secured, and these are fixed in the case 11.

As shown in FIGS. 2 and 6, the semiconductor module 2 includes a main body 28 that houses the switching element 21 (see FIG. 1), a power terminal 22 protruding from the main body 28, and a control terminal 23. The power terminal 22 includes DC terminals 22 _P and 22 _{N to} which a DC voltage is applied, and an output terminal 22 _A that outputs AC power. The DC terminals 22 _P and 22 _N are connected to the capacitor 4 as shown in FIG. The output terminal 22 _A, via the AC busbars 220 _A, and is electrically connected to a three-phase AC motor 81 (see FIG. 1). The control terminal 23 is connected to the control circuit board 3.

As shown in FIG. 9, the discharge resistance module 5 has the same structure as the semiconductor module 2. That is, the discharge resistance module 5 includes a main body portion 58 incorporating the above-described constant discharge resistance R _A (see FIG. 1), a power terminal 52 protruding from the main body portion 58, and a plurality of control terminals 53. The power terminal 52, there is a positive terminal 52 _P and the negative terminal 52 _N. These power terminals 52 _P and 52 _N are electrically connected to the capacitor 4. Further, a part of the plurality of control terminals 53 is the voltage detection terminals 53 _P and 53 _N described above. The control terminal 53 is connected to the control circuit board 3 (see FIG. 2).

  As shown in FIGS. 4 and 5, the control terminal 53 of the discharge resistor module 5 and the control terminal 23 of the semiconductor module 2 are respectively connected to the control circuit board 3. As shown in FIG. 5, a rapid discharge drive circuit 31, a voltage measurement circuit 32, and a drive circuit 33 are formed on the control circuit board 3.

Rapid discharging drive circuit 31, the rapid discharge switching element 51 (see FIG. 11), it is connected to the gate terminal 53 _G to be described later. The rapid discharge drive circuit 31 turns on the rapid discharge switching element 51 in an emergency (for example, when the vehicle causes a traffic accident or the like). Thus, flowing charge stored in the capacitor 4 rapidly discharge resistor R _B, it decreases in a short time a voltage of the capacitor 4. The voltage measurement circuit 32 is connected to the voltage detection terminals 53 _P and 53 _N of the discharge resistance module 5. The voltage measurement circuit 32 is provided for measuring the voltage of the capacitor 4. The drive circuit 33 is connected to the control terminal 23 of the semiconductor module 2. The drive circuit 33 drives the switching element 21 in the semiconductor module 2.

As shown in FIG. 5, the control circuit board 3, the semiconductor module 2 and the discharge and high pressure area S _H which is connected to the high voltage parts and the like of the resistor module 5, a low pressure area low pressure part (not shown) is mounted such as a microcomputer S _L is formed. And rapidly discharging drive circuit 31, a voltage measuring circuit 32, the drive circuit 33, they are close to each other, are formed in one of the high-pressure area S _H.

Next, the structure of the semiconductor module 2 will be described in more detail. As shown in FIG. 8, the semiconductor module 2 of this embodiment includes the switching element 21, a free wheel diode 27 connected in reverse parallel to the switching element 21, and a temperature sensitive diode 29. The control terminal 23 includes a cathode terminal 23 _K , an anode terminal 23 _A , a gate terminal 23 _G , a sense terminal 23 _S, and an emitter terminal 23 _E. The cathode terminal 23 _K and the anode terminal 23 _A are connected to the temperature sensitive diode 29. By measuring the forward voltage V _F of the temperature-sensitive diode 29 by the control circuit board 3, it measures the temperature of the switching element 21. When the temperature becomes too high, the switching element 21 is turned off.

The gate terminal 23 _G , sense terminal 23 _S , and emitter terminal 23 _E are connected to the gate electrode 210 _G , sense electrode 210 _S , and emitter electrode 210 _E of the switching element 21, respectively. A part of the current flowing through the switching element 21 is extracted from the sense electrode 210 _S and measured by the control circuit board 3. When an overcurrent flows, the switching element 21 is turned off.

  As shown in FIG. 7, the semiconductor module 2 includes a plurality of electrode plates 24 exposed from the main body 28 and a metal block 25 made of a metal such as Cu. Between the pair of electrode plates 24, a switching element 21, a metal block 25, a free wheel diode 27, and the like are interposed. Each electrode plate 24 is connected to a power terminal 22.

Of the pair of electrode plates 24, between the one electrode plate 24 _A and the switching element 21, a solder layer 26 which these electrical connection is interposed. Also between the switching element 21 and the metal block 25 _A, and also between the metal block 25 _A and the other electrode plates 24 _N, the solder layer 26 is interposed. Similarly, a solder layer 26 is interposed between one electrode plate 24 _A and the free wheel diode 27 to electrically connect them. Further, the solder layer 26 is also interposed between the free wheel diode 27 and the metal block 25 _B and between the metal block 25 _B and the other electrode plate 24 _N.

Next, the structure of the discharge resistance module 5 will be described in detail. As shown in FIG. 11, the discharge resistor module 5, as described above, it comprises a constant discharge resistor R _A, a rapid discharge resistor R _B, a rapid discharge switching element 51. The control terminal 53 includes the voltage detection terminals 53 _P and 53 _N , a gate terminal 53 _G , a sense terminal 53 _S, and an emitter terminal 53 _E. The voltage detection terminals 53 _P and 53 _N are electrically connected to the power terminals 52 _P and 52 _N. The gate terminal 53 _G , sense terminal 53 _S , and emitter terminal 53 _E are connected to the gate electrode 510 _G , sense electrode 510 _S , and emitter electrode 510 _E of the rapid discharge switching element 51, respectively.

Further, as shown in FIG. 10, the discharge resistance module 5 includes a pair of electrode plates 54 (54 _P and 54 _N ) exposed from the main body portion 58. The individual electrode plates 54 _P and 54 _N are connected to power terminals 52 _P and 52 _N , respectively. Between these electrode plates 54 _P and 54 _N , a constant discharge resistance R _A , a rapid discharge resistance R _B , and a rapid discharge switching element 51 are interposed. In this embodiment, the constant discharge resistance R _A and the rapid discharge resistance R _B are each configured using a semiconductor material (silicon). The constant discharge resistance _RA can be formed of an intrinsic semiconductor that does not contain impurities, for example. Furthermore, the rapid discharge resistor R _B, are added P-type or N-type impurities. Accordingly, the resistance value of the rapid discharge resistor R _B, are smaller than the constant discharge resistor R _A.

As shown in FIG. 10, a solder layer 56 is interposed between one electrode plate 54 _{P of} the pair of electrode plates 54 and the rapid discharge switching element 51. Similarly, between the rapid discharge resistor R _B and rapid discharge switching element 51, and also between the rapid discharge resistor R _B and the other electrode plate 54 _N, the solder layer 56 is interposed. Also, a solder layer 56 is interposed between the one electrode plate 54 _P and the constant discharge resistor _RA and between the constant discharge resistor _RA and the other electrode plate 54 _N.

The effect of this form is demonstrated. Figure 1 In this embodiment, as shown in FIG. 10, and is incorporated and constantly discharge resistor R _A, a rapid discharge resistor R _B, a rapid discharge switching element 51 to one part (discharge resistor module 5).
Therefore, the number of parts can be reduced. Thereby, the manufacturing cost of the power converter device 1 can be reduced. Further, a constant discharge resistor R _A, a rapid discharge resistor R _B, when the rapid discharge switching element 51 are collectively one part (i.e. discharge resistor module 5), as compared with the case of forming these separately, component It becomes easy to make the whole volume small. Therefore, the power converter device 1 can be reduced in size.

As shown in FIG. 1, the discharge resistance module 5 includes a pair of voltage detection terminals 53 _P and 53 _N electrically connected to the electrodes 43 _P and 43 _N of the capacitor 4. These voltage detection terminals 53 _P and 53 _N are connected to the voltage measurement circuit 32 of the control circuit board 3 as shown in FIG. Further, a rapid discharge drive circuit 31 electrically connected to the rapid discharge switching element 51 in the discharge resistor module 5 is formed on the control circuit board 3.
In this case, since the rapid discharge drive circuit 31 and the voltage measurement circuit 32 are electrically connected to the discharge resistance module 5, respectively, these circuits 31 and 32 can be formed at positions close to each other. Therefore, the area of the control circuit board 3 can be reduced.
That is, these circuits 31 and 32 to join the high voltage, it is necessary to sufficiently insulated from the low pressure region S _L. Therefore, between these circuits 31 and 32 and the low pressure area S _L, it is necessary to form the insulating region IS. In contrast, the circuits 31 and 32 to which a high voltage is applied can be brought close to each other because their potentials do not differ greatly. Therefore, if the circuits 31 and 32 to which a high voltage is applied are brought close to each other so as not to be adjacent to the low voltage region S _L as much as possible, the insulating region IS can be reduced, and the area of the control circuit board 3 can be reduced. Can be small.

As shown in FIGS. 22 to 24, the conventional power converter 1 is provided with a rapid discharge resistance R _B and a constant discharge resistance R _A separately. Then, the voltage detection terminals 53 _P and 53 _N are protruded from the constant discharge resistor _RA , and these voltage detection terminals 53 _P and 53 _N are connected to the voltage measurement circuit 32 as shown in FIG. Therefore, the rapid discharge drive circuit 31 and the voltage measurement circuit 32 to which a high voltage is applied are arranged at positions separated from each other. Therefore, the individual circuits 31 and 32 are adjacent to the low voltage region S _L, and a wide insulating region IS is required. For this reason, the area of the control circuit board 3 tends to increase.
On the other hand, as in this embodiment, the rapid discharge resistor R _B and the constant discharge resistor R _A are made into one component (that is, the discharge resistor module 5), and the voltage detection terminals 53 _P and 53 are connected to the discharge resistor module 5. _{If N} is protruded, the voltage measuring circuit 32 can be formed at a position close to the rapid discharge drive circuit 31 as shown in FIG. 5, and the circuits 31 and 32 to which these high voltages are applied can be integrated. it can. Therefore, the individual circuits 31 and 32 do not have to be adjacent to the low voltage region S _L, and it is not necessary to form a wide insulating region IS. Therefore, the area of the control circuit board 3 can be reduced.

In this embodiment, as shown in FIGS. 3 and 4, the semiconductor module 2, the discharge resistance module 5, and the cooling pipe 60 are stacked.
Therefore, the semiconductor module 2 and the discharge resistance module 5 can be brought close to each other. Therefore, as shown in FIG. 5, the drive circuit 33 connected to the semiconductor module 2, the rapid discharge drive circuit 31 and the voltage measurement circuit 32 connected to the discharge resistor module 5 can be formed at positions close to each other. Since the potentials of these circuits 31 to 33 are not greatly different from each other, even if the individual circuits 31 to 33 are brought close to each other, a problem such as a short circuit does not occur. Therefore, by bringing these circuits 31 to 33 closer to each other, it is possible to suppress the formation of a so-called dead space in the control circuit board 3, and the area of the control circuit board 3 can be further reduced.

Further, as shown in FIG. 3, the power conversion device 1 of the present embodiment includes a cooler 6 that cools the semiconductor module 2. The cooler 6 is used to cool the discharge resistance module 5.
Therefore, the discharge resistors R _A and R _B that have generated heat due to the discharge current of the capacitor 4 can be cooled using the cooler 6.

Further, in this embodiment, the constant discharge resistor R _A and the rapid discharge resistor R _B, is constituted by a semiconductor material.
In this case, the resistance value can be easily adjusted by adjusting the amount of impurities added to the semiconductor material. Therefore, it becomes easy to design the discharge resistance module 5. Further, the thickness can be reduced by adjusting the resistance values of the discharge resistors R _A and R _B. Therefore, the discharge resistances R _A and R _B can be downsized, and the discharge resistance module 5 can be downsized.

  As described above, according to this embodiment, it is possible to provide a power conversion device that can reduce the manufacturing cost and can be further reduced in size.

In the present embodiment has formed the constant discharge resistor R _A and the rapid discharge resistance R _B of silicon, it may be those formed by germanium. In this embodiment, as shown in FIG. 1, the IGBT is used as the switching element 21. However, the present invention is not limited to this, and a MOSFET may be used.

  In the following embodiments, the same reference numerals used in the drawings among the reference numerals used in the drawings represent the same constituent elements as those in the first embodiment unless otherwise indicated.

(Embodiment 2)
This embodiment is an example in which the cooling method of the discharge resistance module 5 is changed. As shown in FIG. 12, the power conversion device 1 of this embodiment includes a plurality of cooling pipes 60 as in the first embodiment. The plurality of cooling pipes 60 constitute a cooler 6 that cools the semiconductor module 2. The semiconductor module 2 and the cooling tube 60 are stacked, and the discharge resistance module 5 is sandwiched between the pair of cooling tubes 60.

The effect of this form is demonstrated. If it is set as the said structure, the discharge resistance module 5 can be cooled from both surfaces. Therefore, the discharge resistance module 5 can be cooled more efficiently.
In addition, the same configuration and operational effects as those of the first embodiment are provided.

(Embodiment 3)
This embodiment is an example in which the configuration of the discharge resistance module 5 is changed. As shown in FIGS. 13 and 14, the discharge resistance module 5 of the present embodiment includes two discharge circuits 59 each composed of a constant discharge resistance _RA and a series body 50. These two discharge circuits 59 are connected in series. Similarly to the first embodiment, the semiconductor module 2 of the present embodiment includes an upper arm switching element 21 _H arranged on the upper arm side and a lower arm switching element 21 _L arranged on the lower arm side.

With the above configuration, the continuous discharge resistor _RA and the serial body 50 (see FIG. 14) of the discharge resistor module 5 are arranged at the positions where the free wheel diode 27 and the switching elements 21 _H and 21 _L (see FIG. 6) are arranged in the semiconductor module 2. ) Can be arranged. Therefore, the discharge resistance module 5 can be manufactured using a method similar to the manufacturing method of the semiconductor module 2, and the discharge resistance module can be easily manufactured.
In addition, the same configuration and operational effects as those of the first embodiment are provided.

(Embodiment 4)
This embodiment is an example in which the structure of the discharge resistance module 5 is changed. As shown in FIG. 15, the discharge resistance module 5 of this embodiment includes a pair of electrode plates 54 as in the first embodiment. _A discharge resistor _RA and a conductor block 55 are interposed between the pair of electrode plates 54. The conductor block 55 is made of a conductor (metal in this embodiment) and is always connected in series to the discharge resistor _RA . In addition, a solder layer 56 is interposed between one electrode plate 54 _{P of} the pair of electrode plates 54 and the conductor block 55. Similarly, between the constantly discharge resistor R _A and the conductor block 55, and also between the constant discharge resistor R _A and the other electrode plates 54 _N, the solder layer 56 is interposed.

The effect of this form is demonstrated. With the above configuration, three solder layers 56 can be formed between the pair of electrode plates 54 _P and 54 _N. Therefore, the number of solder layers 56 can be increased as compared with the first embodiment (see FIG. 10). Therefore, even if current flows and the discharge resistance _{RA and the} like always generate heat and expand to generate stress, the stress can be absorbed by many solder layers 56. Therefore, the stress applied to each solder layer 56 can be reduced, and the possibility that cracks or the like occur in the solder layer 56 can be reduced.
In addition, the same configuration and operational effects as those of the first embodiment are provided.

(Embodiment 5)
This embodiment is an example in which the structure of the discharge resistance module 5 is changed. As shown in FIG. 16, in this embodiment, a diode 57 is connected in series to the constant discharge resistance _RA . As shown in FIG. 17, the discharge resistance module 5 of this embodiment includes a pair of electrode plates 54 _P and 54 _N as in the fourth embodiment. Between the pair of electrode plates 54 _P and 54 _N , the diode 57 and the discharge resistance module 5 are interposed. Between one electrode plate 54 _P of the pair of electrode plates 54 and the diode 57, a solder layer 56 that connects them is interposed. Similarly, the solder layer 56 is also interposed between the diode 57 and the constant discharge resistor R _A and between the constant discharge resistor R _A and the other electrode plate 54 _N.

The effect of this form is demonstrated. With the above configuration, three solder layers 56 can be formed between the pair of electrode plates 54 _P and 54 _N. Therefore, the number of solder layers 56 can be increased as compared with the first embodiment (see FIG. 10). Therefore, even if current flows and the discharge resistance _{RA and the} like always generate heat and expand to generate stress, the stress can be absorbed by many solder layers 56. Therefore, the stress applied to each solder layer 56 can be reduced, and the possibility that cracks or the like occur in the solder layer 56 can be reduced.
In addition, the same configuration and operational effects as those of the first embodiment are provided.

(Embodiment 6)
This embodiment is an example in which the configuration of the discharge resistance module 5 is changed. As shown in FIG. 18, the discharge resistance module 5 of this embodiment includes a temperature-sensitive diode 590. The control terminal 53 includes voltage detection terminals 53 _P and 53 _N , a cathode terminal 53 _K , an anode terminal 53 _A , a gate terminal 53 _G , a sense terminal 53 _S, and an emitter terminal 53 _E. The cathode terminal 53 _K and the anode terminal 53 _A are connected to the temperature sensitive diode 590. The control circuit board 3, by measuring the forward voltage V _F of the temperature sensing diode 590 measures the temperature of the discharge resistor module 5. Similarly to the first embodiment, the gate terminal 53 _G , the sense terminal 53 _S , and the emitter terminal 53 _E are connected to the gate electrode 510 _G , the sense electrode 510 _S , and the emitter electrode 510 _E of the rapid discharge switching element 51, respectively. ing.

As shown in FIG. 19, the voltage detection terminals 53 _P and 53 _N are electrically connected to the voltage measurement circuit 32 as in the first embodiment. The other control terminals 53 (53 _K , 53 _A , 53 _G , 53 _S , 53 _E ) are electrically connected to the rapid discharge drive circuit 31, respectively.
In addition, the same configuration and operational effects as those of the first embodiment are provided.

(Embodiment 7)
This embodiment is an example in which the configuration of the discharge resistance module 5 is changed. As shown in FIG. 20, the discharge resistance module 5 of this embodiment includes a temperature-sensitive diode 590 as in the sixth embodiment. The discharge resistor module 5 includes voltage detection terminals 53 _P and 53 _N , a cathode terminal 53 _K , an anode terminal 53 _A , a gate terminal 53 _G, and an emitter terminal 53 _{E as control} terminals 53. That is, the discharge resistance module 5 of this embodiment does not include the sense terminal 53 _S as compared with the sixth embodiment.

As shown in FIG. 21, the voltage detection terminals 53 _P and 53 _N are electrically connected to the voltage measurement circuit 32 as in the sixth embodiment. The other control terminals 53 (53 _K , 53 _A , 53 _G , 53 _E ) are electrically connected to the rapid discharge drive circuit 31, respectively.
In addition, the same configuration and operational effects as those of the first embodiment are provided.

  The present invention is not limited to the above embodiments, and can be applied to various embodiments without departing from the scope of the invention.

1 power converter 2 semiconductor module 21 switching elements 3 control circuit board 4 capacitor 5 discharge resistor module 51 rapidly discharge switching element R _A constantly discharge resistor R _B rapid discharge resistor

Claims (8)

A semiconductor module (2) having a built-in switching element (21);
A control circuit board (3) for controlling the on / off operation of the switching element;
A capacitor (4) for smoothing a DC voltage applied to the semiconductor module;
A discharge resistance module (5) for discharging the charge stored in the capacitor;
The discharge resistance module is
_A continuous discharge resistor (R _A ) connected in parallel to the capacitor and constantly discharging the charge stored in the capacitor;
The normally when the discharge resistor rapid discharge resistance is less resistance than the (R _B), it becomes from a rapid discharge switching element (51) which are connected in series to said acute speed discharge resistor, connected in parallel to the constant discharge resistor in series Body (50),
A power conversion device (1) incorporating The discharge resistance module includes a pair of voltage detection terminals (53 _P and 53 _N ) electrically connected to the positive electrode (43 _P ) and the negative electrode (43 _N ) of the capacitor, respectively. A rapid discharge drive circuit (31) for driving the rapid discharge switching element and a voltage measurement circuit (32) for measuring the voltage of the capacitor are formed, and the pair of voltage detection terminals are connected to the voltage measurement circuit. The power converter device (1) of Claim 1 connected to.   The power converter according to claim 1 or 2, further comprising a cooler (6) for cooling the semiconductor module, wherein the discharge resistance module is cooled by the cooler.   A plurality of the semiconductor modules and a plurality of cooling pipes (60), the cooler is constituted by the plurality of cooling pipes, the semiconductor module and the cooling pipes are stacked, and the discharge resistance module The power conversion device according to claim 3, wherein the power converter is sandwiched between the pair of cooling pipes.   The said normal discharge resistance and the said rapid discharge resistance are the power converter devices as described in any one of Claims 1-4 comprised by the semiconductor material, respectively. The semiconductor module includes, as the switching element, an upper arm switching element (21 _H ) disposed on the upper arm side and a lower arm switching element (21 _L ) disposed on the lower arm side, and the discharge resistance module Comprising two discharge circuits (59) comprising the constant discharge resistor and the series body connected in parallel to the constant discharge resistor, wherein the two discharge circuits are connected in series. 5. The power conversion device according to claim 5.   The discharge resistance module includes a pair of electrode plates (54), and the constant discharge resistance and a conductor block (55) made of a conductor and connected in series to the constant discharge resistance are interposed between the pair of electrode plates. , Between one electrode plate of the pair of electrode plates and the conductor block, between the conductor block and the constant discharge resistance, and between the constant discharge resistance and the other electrode plate, respectively. The power converter according to any one of claims 1 to 6, wherein a solder layer (56) is interposed.   The discharge resistance module includes a pair of electrode plates, and the constant discharge resistance and a diode (57) connected in series to the constant discharge resistance are interposed between the pair of electrode plates. A solder layer is interposed between one electrode plate and the diode, between the diode and the constant discharge resistor, and between the constant discharge resistor and the other electrode plate, respectively. Item 7. The power conversion device according to any one of Items 1 to 6.

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