JP2019197123A - Electro-optical device and electronic apparatus - Google Patents

Abstract

To provide an electro-optical device enhancing a reflectance ratio of light in a light-shielding layer constituting a parting, and an electronic apparatus.SOLUTION: A first light-shielding layer 27a for a parting is provided around a display area 10a in a second substrate 20 of an electro-optical device 100. The first light-shielding layer 27a has a reflective metal layer 270 and in which a reflection enhancing layer 275 laminated with a first dielectric layer 276 and a second dielectric layer 277 is provided so as to overlap with the metal layer 270. Thereby, the first light-shielding layer 27a has a higher reflectance ratio than that of a case of the metal layer 270 itself. Further, in the second substrate 20, a second light-shielding layer 27b overlapping in a plan view between a pixel electrode 9a of a first substrate 10 and itself is formed in the same layer as the first light-shielding layer 27a. A lens 24 is formed in the second substrate 20, and both of the lens 24 and first light-shielding layer 27a are provided at one surface 20s side of the second substrate 20.SELECTED DRAWING: Figure 6

Description

  The present invention relates to an electro-optical device provided with a light shielding layer surrounding a display area, and an electronic apparatus.

  In an electro-optical device (liquid crystal device) used as a light valve or the like of a projection display device, light incident from one side of a first substrate and a second substrate is modulated by an electro-optical layer to display an image. In such an electro-optical device, when extra light is visually recognized around the image, the quality of the image is deteriorated. Therefore, the second substrate is provided with a light blocking part in the display area. In addition, when light is incident on the pixel transistor provided on the first substrate, the transistor characteristics deteriorate due to the photocurrent. Therefore, a configuration in which a light-shielding layer that overlaps the pixel transistor in plan view on the second substrate is provided. ing.

  However, when the light shielding layer overlapping the pixel transistor in a plan view is made of a light absorbing material such as chromium, the temperature of the electro-optical device rises due to light absorption by the light shielding layer. Even when the light-shielding layer that overlaps the pixel transistor in plan view is made of a light-reflecting metal such as aluminum, the reflectivity is not sufficient, and the temperature of the electro-optical device rises. In view of this, a configuration has been proposed in which a dielectric multilayer film is laminated on a light-reflective metal layer such as aluminum in the light-shielding layer to increase the reflectance of the light-shielding layer (see Patent Document 1).

JP 2004-78204 A

  However, Patent Document 1 does not describe the necessity of suppressing the absorption of light at a parting time, and has a problem that the temperature increase of the electro-optical device cannot be sufficiently suppressed.

  In view of the above problems, an object of the present invention is to provide an electro-optical device and an electronic apparatus in which light reflectance at a light-shielding layer constituting a parting is increased.

  In order to solve the above-described problem, an aspect of the electro-optical device to which the invention is applied includes a first substrate, a second substrate facing the first substrate, and between the first substrate and the second substrate. And a first light-shielding layer provided on one surface side of the second substrate so as to surround the display region, the first light-shielding layer comprising a reflective metal layer And an increased reflection layer that is provided so as to overlap the metal layer and in which a first dielectric layer and a second dielectric layer having a refractive index larger than that of the first dielectric layer are laminated. .

  In the present invention, since the first light-shielding layer for parting is provided around the display area on the second substrate, it is possible to suppress extra light from being visually recognized around the image. In addition, since the first light shielding layer includes the metal layer and the increased reflection layer in which the first dielectric layer and the second dielectric layer are stacked is provided so as to overlap the metal layer, the first light shielding layer. Has a higher reflectivity than the metal layer alone. Accordingly, the temperature increase of the electro-optical device due to the first light shielding layer absorbing light from the light source can be suppressed.

  In the present invention, it is possible to adopt a mode in which the edge of the metal layer, the edge of the first dielectric layer, and the edge of the second dielectric layer overlap in plan view. According to this aspect, the metal layer, the first dielectric layer, and the second dielectric layer can be continuously patterned without changing the etching mask.

  In the present invention, a plurality of lenses are provided on one surface side of the second substrate, the first light shielding layer is provided on one surface side of the second substrate, and each of the plurality of lenses is the second surface. A mode is adopted in which a plurality of concave curved surfaces provided on one surface side of the substrate and a lens layer provided so as to fill the inside of the plurality of concave curved surfaces and having a refractive index higher than that of the second substrate are adopted. be able to. According to this aspect, since the lens and the first light shielding layer need only be formed on one surface side of the second substrate, compared to the case where the first light shielding layer and the lens are provided on different surfaces of the second substrate. The advantage is high productivity.

  In the present invention, the first dielectric layer and the second dielectric layer may be stacked between the lens layer and the metal layer. In this case, the lens layer may be silicon oxynitride, the first dielectric layer may be silicon oxide, and the second dielectric layer may be silicon nitride. According to this aspect, in the film forming process using the CVD method or the like, by switching a part of the gas supplied to the reaction chamber, the lens layer made of silicon oxynitride, the first dielectric layer made of silicon oxide, and Since the second dielectric layer made of silicon nitride can be sequentially formed, there is an advantage that productivity is high.

  In the present invention, a plurality of pixel electrodes provided on one side of the first substrate and a second light-shielding provided on one side of the second substrate and overlapping each of the plurality of pixel electrodes in plan view. The second light-shielding layer includes: a metal layer that is the same as the metal layer of the first light-shielding layer; and a reflection-enhancing layer that is the same layer as the reflective layer of the first light-shielding layer. The aspect which has can be employ | adopted.

  The electro-optical device to which the present invention is applied can be used in various electronic apparatuses such as a projection display device and a direct-view display device. When an electro-optical device is used as a projection display device among electronic devices, the projection display device projects a light source unit that emits light supplied to the electro-optical device and light modulated by the electro-optical device. A projection optical system. Further, the electronic apparatus combines the plurality of electro-optical devices corresponding to each of a plurality of color lights having different wavelength ranges, and a color combining optical system that combines the plurality of color lights emitted from each of the plurality of electro-optical devices. And, among the plurality of electro-optical devices, the electro-optical device corresponding to the color light of which the wavelength region is a long wavelength region, the electro-optical device corresponding to the color light of which the wavelength region is a short wavelength region, The dielectric layer is preferably thick. According to this aspect, the incident color light can be appropriately reflected by the first light shielding layer in each of the plurality of electro-optical devices.

FIG. 2 is a plan view of the electro-optical device according to the first embodiment of the invention. FIG. 2 is a cross-sectional view of the electro-optical device shown in FIG. 1. Explanatory drawing which shows typically cross-sectional structures, such as a lens shown in FIG. Explanatory drawing which shows the planar positional relationship of the some lens shown in FIG. FIG. 4 is a process cross-sectional view illustrating a method for manufacturing the electro-optical device illustrated in FIG. 3. FIG. 6 is an explanatory diagram of an electro-optical device according to a second embodiment of the invention. Explanatory drawing which shows the planar positional relationship of the some lens shown in FIG. 1 is a schematic configuration diagram of a projection display device (electronic device) using an electro-optical device to which the present invention is applied.

  Embodiments of the present invention will be described with reference to the drawings. In the drawings to be referred to in the following description, the scales are different for each layer and each member so that each layer and each member have a size that can be recognized on the drawing. In the following description, the description is focused on the case where the first electrode formed on the first substrate is a pixel electrode and the second electrode formed on the second substrate is a common electrode.

[Embodiment 1]
(Configuration of electro-optical device)
FIG. 1 is a plan view of an electro-optical device 100 according to Embodiment 1 of the present invention. FIG. 2 is a cross-sectional view of the electro-optical device 100 shown in FIG. As shown in FIGS. 1 and 2, in the electro-optical device 100, the first substrate 10 and the second substrate 20 are bonded to each other with a sealant 107 through a predetermined gap, and the first substrate 10 and the second substrate are combined. 20 is facing. The sealing material 107 is provided in a frame shape along the outer edge of the second substrate 20, and an electro-optic such as a liquid crystal layer is formed in a region surrounded by the sealing material 107 between the first substrate 10 and the second substrate 20. Layer 80 is disposed. Accordingly, the electro-optical device 100 is configured as a liquid crystal device. The sealing material 107 is a photo-curing adhesive or a photo-curing and thermo-curing adhesive, such as glass fiber or glass beads for setting the distance between both substrates to a predetermined value. Gap material is blended. The first substrate 10 and the second substrate 20 are both square, and a display area 10 a is provided as a square area in the approximate center of the electro-optical device 100. Corresponding to such a shape, the sealing material 107 is also provided in a substantially square shape.

  On the surface (one surface 10s) side of the first substrate 10 on the second substrate 20 side, in the peripheral region 10b outside the display region 10a, the data line driving circuit 101 and a plurality of terminals along one side of the first substrate 10 are provided. 102 is formed, and a scanning line driving circuit 104 is formed along another side adjacent to the one side. A flexible wiring substrate (not shown) is connected to the terminal 102, and various potentials and various signals are input to the first substrate 10 through the flexible wiring substrate.

  In one surface 10s of the first substrate 10, the display region 10a includes a plurality of pixel electrodes 9a as first electrodes and pixel transistors (not shown) electrically connected to each of the plurality of pixel electrodes 9a. It is formed in a shape. A first alignment film 16 is formed on the second substrate 20 side with respect to the pixel electrode 9 a, and the pixel electrode 9 a is covered with the first alignment film 16.

  A common electrode 21 as a second electrode is formed on the surface (one surface 20 s) facing the first substrate 10 in the second substrate 20, and the first electrode 10 side with respect to the common electrode 21 is a first electrode. A two-alignment film 26 is formed. The common electrode 21 is formed on substantially the entire surface of the second substrate 20 and is covered with the second alignment film 26.

  A light shielding layer 27 is formed on the side opposite to the first substrate 10 with respect to the common electrode 21 on the one surface 20 s side of the second substrate 20. The light shielding layer 27 is formed as a first light shielding layer 27a for parting extending along the outer peripheral edge of the display region 10a and surrounding the display region 10a. Further, as will be described later, the light shielding layer 27 may be formed as a second light shielding layer in a region overlapping with a region sandwiched between adjacent pixel electrodes 9a in plan view.

  In the present embodiment, a dummy pixel electrode 9b formed simultaneously with the pixel electrode 9a is formed in a region overlapping the first light shielding layer 27a in a plan view in the peripheral region 10b surrounding the display region 10a of the first substrate 10. ing.

The first alignment film 16 and the second alignment film 26 are inorganic alignment films (vertical alignment films) made of oblique vapor deposition films such as SiO _x (x <2), SiO ₂ , TiO ₂ , MgO, Al ₂ O _3. The liquid crystal molecules having negative dielectric anisotropy used for the electro-optic layer 80 are tilted and aligned. For this reason, the liquid crystal molecules form a predetermined angle with respect to the first substrate 10 and the second substrate 20. In this manner, the electro-optical device 100 is configured as a VA (Vertical Alignment) mode liquid crystal device.

  The first substrate 10 has an inter-substrate conduction electrode for providing electrical continuity between the first substrate 10 and the second substrate 20 in a region overlapping the corner portion of the second substrate 20 outside the sealing material 107. 109 is formed. The inter-substrate conducting electrode 109 is provided with an inter-substrate conducting material 109 a containing conductive particles, and the common electrode 21 of the second substrate 20 is interposed between the inter-substrate conducting material 109 a and the inter-substrate conducting electrode 109. And electrically connected to the first substrate 10 side. For this reason, a common potential is applied to the common electrode 21 from the first substrate 10 side.

  In the electro-optical device 100 of the present embodiment, the pixel electrode 9a and the common electrode 21 are formed of a light-transmitting conductive film such as an ITO (Indium Tin Oxide) film or an IZO (Indium Zinc Oxide) film. Is configured as a transmissive liquid crystal device. In the electro-optical device 100, the light incident from one of the first substrate 10 and the second substrate 20 is modulated while being transmitted through the other substrate, and an image is displayed. In the present embodiment, as indicated by an arrow L in FIG. 2, the light incident from the second substrate 20 is modulated for each pixel by the electro-optic layer 80 while being transmitted through the first substrate 10 and emitted, and an image is converted. indicate.

  When the electro-optical device 100 is a reflective liquid crystal device, the common electrode 21 is formed of a light-transmitting conductive film such as an ITO film or an IZO film, and the pixel electrode 9a is a reflective conductive film such as an aluminum film. It is formed by. In the reflection type electro-optical device 100, light incident from the second substrate 20 side is modulated while being reflected and emitted by the first substrate 10, and an image is displayed.

(Configuration of the lens 24 on the second substrate 20 side)
FIG. 3 is an explanatory diagram schematically showing a cross-sectional configuration of the lens 24 and the like shown in FIG. FIG. 4 is an explanatory diagram showing a planar positional relationship between the plurality of lenses 24 shown in FIG.

  As shown in FIG. 3, on the one surface 10 s side of the first substrate 10, a light shielding layer 17 such as a data line or a scanning line, a pixel transistor 30, and a light shielding layer 8 between the pixel transistor 30 and the first substrate 10. The light shielding layers 8 and 17 and the pixel transistor 30 do not transmit light. For this reason, in the first substrate 10, the region overlapping the pixel electrode 9 a in plan view, the region overlapping the light shielding layers 8 and 17 and the pixel transistor 30 in plan view, and the region sandwiched between adjacent pixel electrodes 9 a and the plane. A region overlapping in view is a light shielding region 15b that does not transmit light. On the other hand, of the region overlapping with the pixel electrode 9a in plan view, the region not overlapping with the light shielding layers 8 and 17 and the pixel transistor 30 in plan view is an opening region 15a (translucent region) that transmits light. . Therefore, only the light transmitted through the opening region 15a contributes to the image display, and the light traveling toward the light shielding region 15b does not contribute to the image display.

  Therefore, in the present embodiment, as shown in FIGS. 2 and 3, the second substrate 20 is viewed in plan with respect to each of the plurality of pixel electrodes 9a (a state viewed from a direction perpendicular to the second substrate 20). The lens 24 is configured as a lens array substrate on which a plurality of lenses 24 that overlap with each other in a one-to-one relationship is formed, and the lens 24 plays a role of guiding light to the opening region 15 a of the first substrate 10.

  As shown in FIG. 4, the lenses 24 are arranged so that at least a part of the adjacent lenses 24 are in contact with each other. In the present embodiment, the lens 24 is in contact with the adjacent lens 24 over the entire circumference.

  As shown in FIG. 3, when the lens 24 is configured, a concave curved surface 201 is formed on the one surface 20s of the second substrate 20 at a position overlapping with each of the plurality of pixel electrodes 9a. The second substrate 20 is provided with a lens layer 28 that fills each of the plurality of concave curved surfaces 201, and the surface 280 of the lens layer 28 opposite to the second substrate 20 is a flat surface. . A transparent layer 29 is formed on the surface 280 of the lens layer 28 opposite to the second substrate 20, and the common electrode 21 is formed on the surface 290 of the transparent layer 29 opposite to the second substrate 20. Has been.

  The lens layer 28 has a refractive index different from that of the second substrate 20. Therefore, the concave curved surface 201 constitutes the lens surface 240 of the lens 24. In the present embodiment, the lens layer 28 has a higher refractive index than the second substrate 20. For this reason, the lens 24 has positive power. In the present embodiment, the second substrate 20 is made of a glass substrate or a quartz substrate (refractive index near wavelength 550 nm = 1.48), and the lens layer 28 is silicon oxynitride (refractive index near wavelength 550 nm = 1.58-1). .68). The translucent layer 29 is made of silicon oxide (refractive index in the vicinity of a wavelength of 550 nm = 1.48).

(Detailed configuration of the first light shielding layer 27a)
As shown in FIG. 3, the first light shielding layer 27 a for parting has a reflective metal layer 270 and an increased reflection layer 275 provided so as to overlap the metal layer 270, and the increased reflection layer 275. Is a dielectric multilayer film in which a first dielectric layer 276 and a second dielectric layer 277 having a higher refractive index than the first dielectric layer 276 are laminated.

  The reflective metal layer 270 is a metal layer mainly composed of aluminum or silver. In the present embodiment, the metal layer 270 contains aluminum as a main component.

  Examples of the first dielectric layer 276 (low refractive index layer) include silicon oxide and magnesium fluoride (refractive index in the vicinity of a wavelength of 550 nm = 1.38 to 1.48). As the second dielectric layer 277 (high refractive index layer), silicon nitride (refractive index near wavelength 550 nm = 2.02), titanium oxide (refractive index near wavelength 550 nm = 2.30 to 2.55), oxidation Examples include tantalum (refractive index near wavelength 550 nm = 2.1).

  In the present embodiment, the first dielectric layer 276 is silicon oxide and the second dielectric layer 277 is silicon nitride. The sum of the number of layers of the first dielectric layer 276 and the second dielectric layer 277 is 2 or more. Further, the edge of the metal layer 270, the edge of the first dielectric layer 276, and the edge of the second dielectric layer 277 overlap in plan view.

(Method of manufacturing electro-optical device 100)
FIG. 5 is a process cross-sectional view illustrating a method for manufacturing the electro-optical device 100 illustrated in FIG. 3, and schematically illustrates the formation of the lens 24 and the first light shielding layer 27 a on the second substrate 20. In order to manufacture the second substrate 20, a mother substrate larger than the single-sized second substrate 20 is used. However, in the following description, the second substrate 20 and the mother substrate having the single-sized size are not distinguished from each other. The substrate 20 will be described.

  First, in the first step ST1 shown in FIG. 5, an etching mask 61 is formed on one surface 20s of the second substrate 20. In the etching mask 61, an area where the lens 24 shown in FIG. 3 is to be formed is an opening 610. Next, in the second step ST2, the one surface 20s of the second substrate 20 is etched from the opening 610 of the etching mask 61 to form the concave curved surface 201, and then the etching mask 61 is removed. In the second step ST2, either wet etching or dry etching may be used. In the present embodiment, wet etching is performed using an etchant containing hydrofluoric acid in the second step ST2. According to such wet etching, the one surface 20s of the second substrate 20 is isotropically etched from the opening 610, so that a spherical concave surface 201 is formed.

  Next, in the third step ST3, the lens layer 28 is formed so as to fill the concave curved surface 201 from the side opposite to the second substrate 20. In the present embodiment, the lens layer 28 is made of silicon oxynitride formed by plasma CVD or the like.

  Next, in the fourth step ST4, the lens layer 28 is flattened from the side opposite to the second substrate 20, and the surface 280 of the lens layer 28 opposite to the second substrate 20 is made a continuous plane. As the planarization process, a CMP (Chemical Mechanical Polishing) process or the like is used.

  Next, in the fifth step ST5, a second dielectric layer 277 made of silicon nitride, a first dielectric layer 276 made of silicon oxide, and a metal layer 270 are laminated on the surface 280 of the lens layer 28. At this time, the sum of the number of layers of the first dielectric layer 276 and the second dielectric layer 277 is two or more, and a metal is formed on the upper layer of the dielectric multilayer film composed of the first dielectric layer 276 and the second dielectric layer 277. Layer 270 is stacked.

  Next, after the etching mask 62 is formed on the surface of the metal layer 270, in the sixth step ST6, the metal layer 270, the first dielectric layer 276, and the second dielectric layer 277 are formed from the opening 620 of the etching mask 62. Etching is continuously performed, and then the etching mask 62 is removed. As a result, the first light shielding layer 27a described with reference to FIG. 3 is formed. In the first light shielding layer 27a, the edge of the metal layer 270, the edge of the first dielectric layer 276, and the edge of the second dielectric layer 277 are overlapped in plan view. That is, when forming the first light shielding layer 27a, the metal layer 270, the first dielectric layer 276, and the second dielectric layer 277 can be successively patterned without changing the etching mask 62.

  After that, as described with reference to FIG. 3, the light-transmitting layer 29, the common electrode 21, and the second alignment film 26 are formed, and then the electro-optical device 100 is assembled.

(Main effects of this embodiment)
As described above, in the electro-optical device 100 according to this embodiment, the second substrate 20 is provided with the first light-shielding layer 27a for parting around the display region 10a. It can suppress that light is visually recognized. The first light shielding layer 27 a includes the reflective metal layer 270, and is provided so that the increased reflection layer 275 in which the first dielectric layer 276 and the second dielectric layer 277 are stacked overlaps the metal layer 270. It has been. For this reason, the first light-shielding layer 27a has a higher reflectance than that of the metal layer 270 alone. Accordingly, when an image is formed using the electro-optical device 100, even when light from the light source is incident from the second substrate 20 and travels around the display region 10a, as shown by an arrow L1 in FIG. The substantially whole light incident on the first light shielding layer 27a is efficiently reflected by the first light shielding layer 27a, and is hardly absorbed by the first light shielding layer 27a. Therefore, the temperature increase of the electro-optical device 100 due to the light absorption by the first light shielding layer 27a can be suppressed. Therefore, since the thermal degradation or the like of the electro-optical layer 80 can be suppressed, the reliability of the electro-optical device 100 can be improved.

  In the present embodiment, the first light shielding layer 27 a is provided on the one surface 20 s side of the second substrate 20, and the plurality of lenses 24 are each a plurality of concave portions provided on the one surface 20 s side of the second substrate 20. The curved surface 201 and the lens layer 28 provided so as to fill the inside of the plurality of concave curved surfaces 201 are configured. Accordingly, since the lens 24 and the first light shielding layer 27a need only be formed on the one surface 20s side of the second substrate 20, the first light shielding layer 27a and the lens 24 are provided on different surfaces of the second substrate 20. There is an advantage that productivity is high.

  The first dielectric layer 276 and the second dielectric layer 277 are stacked between the lens layer 28 and the metal layer 270. Moreover, the lens layer 28 is silicon oxynitride, the first dielectric layer 276 is silicon oxide, and the second dielectric layer 277 is silicon nitride. Therefore, in the fifth step ST5 shown in FIG. 5, when a film is formed using the CVD method or the like, the lens layer 28 made of silicon oxynitride, silicon oxide is changed by switching a part of the gas supplied to the reaction chamber. Since the first dielectric layer 276 made of and the second dielectric layer 277 made of silicon nitride can be sequentially formed, there is an advantage that productivity is high.

[Embodiment 2]
FIG. 6 is an explanatory diagram of the electro-optical device 100 according to the second embodiment of the invention, and is a schematic diagram illustrating a cross-sectional configuration of the electro-optical device 100. FIG. 7 is an explanatory diagram showing a planar positional relationship between the plurality of lenses 24 shown in FIG. In addition, since the basic structure of this embodiment is the same as that of Embodiment 1, it attaches and shows the same code | symbol to a common part, and abbreviate | omits those description.

  As shown in FIG. 6, in the electro-optical device 100 of the present embodiment, as in the first embodiment, the second substrate 20 is viewed in plan with respect to each of the plurality of pixel electrodes 9a (perpendicular to the second substrate 20). The lens array substrate is formed with a plurality of lenses 24 that overlap with each other in a one-to-one relationship. On the one surface 20 s side of the second substrate 20, a first light shielding layer 27 a for parting is provided around the display area 10 a as the light shielding layer 27. As described in the first embodiment, the first light shielding layer 27a includes the reflective metal layer 270 and the increased reflection layer 275 provided so as to overlap the metal layer 270. The increased reflection layer 275 includes: A dielectric multilayer film in which a first dielectric layer 276 and a second dielectric layer 277 having a higher refractive index than the first dielectric layer 276 are laminated.

  In the present embodiment, on the one surface 20s side of the second substrate 20, a second light shielding layer 27b that overlaps each of the plurality of pixel electrodes 9a in plan view is provided as the light shielding layer 27. More specifically, as shown in FIG. 7, the second light shielding layer 27b is formed in a region surrounded by the four lenses 24, and overlaps the pixel transistor 30 shown in FIG. 6 in plan view.

  The second light shielding layer 27b is a layer formed simultaneously with the formation of the first light shielding layer 27a in the fifth step ST5 and the sixth step ST6 shown in FIG. Therefore, as shown in FIG. 6, the second light shielding layer 27b includes the same metal layer 270 as the metal layer 270 of the first light shielding layer 27a, and the increased reflection of the same layer as the increased reflection layer 275 of the first light shielding layer 27a. Layer 275. The increased reflection layer 275 of the second light shielding layer 27b is the same as the first dielectric layer 276 of the first dielectric layer 276 of the first light shielding layer 27a and the second dielectric layer 277 of the first light shielding layer 27a. A second dielectric layer 277 of the layer.

  In the electro-optical device 100 configured as described above, even when light from the light source is incident from the second substrate 20 and travels around the display region 10a, as shown by an arrow L1 in FIG. Almost the entire light incident on the layer 27a is efficiently reflected by the first light shielding layer 27a, and is hardly absorbed by the first light shielding layer 27a. Further, as indicated by an arrow L2 in FIG. 6, substantially the entire light incident on the second light shielding layer 27b is efficiently reflected by the second light shielding layer 27b, and is hardly absorbed by the second light shielding layer 27b. Accordingly, it is possible to suppress an increase in temperature of the electro-optical device 100 due to light absorption by the first light shielding layer 27a and the second light shielding layer 27b. Therefore, since the thermal degradation or the like of the electro-optical layer 80 can be suppressed, the reliability of the electro-optical device 100 can be improved.

  In addition, since the first light shielding layer 27a and the second light shielding layer 27b are provided in the same layer, the number of processes does not increase even when both the first light shielding layer 27a and the second light shielding layer 27b are provided.

[Other embodiments]
In the above embodiment, the case where the present invention is applied to the electro-optical device 100 in which light from the light source enters from the second substrate 20 side is illustrated, but light from the light source enters from the first substrate 10 side. The present invention may be applied to the electro-optical device 100. In this case, in the first light shielding layer 27a and the second light shielding layer 27b, the reflective reflection layer 275 is formed on the first substrate 10 side with respect to the metal layer 270.

  In the above embodiment, the case where the present invention is applied to the transmissive electro-optical device 100 is illustrated, but the present invention may be applied to the reflective electro-optical device 100.

[Example of mounting on electronic devices]
An electronic apparatus using the electro-optical device 100 according to the above-described embodiment will be described. FIG. 8 is a schematic configuration diagram of a projection display device (electronic apparatus) using the electro-optical device 100 to which the present invention is applied. In FIG. 8, an optical element such as a polarizing plate is not shown. In the projection type display device 2100 shown in FIG. 8, the electro-optical device 100 according to the first and second embodiments is used as a light valve. Inside the projection display apparatus 2100, a lamp unit 2102 (light source unit) having a white light source such as a halogen lamp is provided. The projection light emitted from the lamp unit 2102 is separated into three primary colors of red light R, green light G, and blue light B by three mirrors 2106 and two dichroic mirrors 2108 arranged inside. The separated projection light is guided to the light valves 100R, 100G, and 100B corresponding to the respective primary colors and modulated. Note that the blue light B has a longer optical path than the red light R and the green light, and is guided through a relay lens system 2121 having an incident lens 2122, a relay lens 2123, and an output lens 2124 in order to prevent the loss.

  The lights modulated by the light valves 100R, 100G, and 100B are incident on the dichroic prism 2112 (color synthesis optical system) from three directions. In the dichroic prism 2112, the red light R and the blue light B are reflected at 90 degrees, and the green light G is transmitted. Accordingly, after the primary color images are combined, a color image is projected onto the screen 2120 by the projection lens group 2114 (projection optical system).

In the projection display device 2100 configured as described above, among the plurality of electro-optical devices 100 (light valves 100R, 100G, and 100B), the electro-optical device 100 corresponding to colored light having a long wavelength region has a short wavelength region. The first dielectric layer 276 and the second dielectric layer 277 described with reference to FIG. 3 and the like are thicker than the electro-optical device 100 corresponding to the color light in the wavelength band. That is, the red light R, the green light G, and the blue light B have the following relationship in the wavelength range.
Red light R> Green light G> Blue light B

Accordingly, the thicknesses of the first dielectric layer 276 and the second dielectric layer 277 of the electro-optical device 100 used in each of the light valves 100R, 100G, and 100B have the following relationship.
Light valve 100R> Light valve 100G> Light valve 100B

  Therefore, in the electro-optical device 100 used in each of the light valves 100R, 100G, and 100B, the first light shielding layer 27a and the second light shielding layer 27b can efficiently reflect the incident color light.

(Other projection display devices)
In addition, about a projection type display apparatus, you may comprise the LED light source etc. which radiate | emit the light of each color as a light source part, and supply each color light radiate | emitted from this LED light source to another liquid crystal device. .

(Other electronic devices)
The electronic apparatus including the electro-optical device 100 to which the present invention is applied is not limited to the projection display device 2100 of the above embodiment. The electro-optical device 100 to which the present invention is applied may be used in electronic devices such as a projection type HUD (head-up display), a direct-view type HMD (head-mounted display), a personal computer, a digital still camera, and a liquid crystal television. Good.

9a ... pixel electrode, 10 ... first substrate, 10a ... display region, 10b ... peripheral region, 20 ... second substrate, 21 ... common electrode, 24 ... lens, 27a ... first light shielding layer, 27b ... second light shielding layer, 28 ... Lens layer, 29 ... Translucent layer, 30 ... Pixel transistor, 80 ... Electro-optical layer, 100 ... Electro-optical device, 100B, 100G, 100R ... Light valve, 201 ... Concave surface, 240 ... Lens surface, 270 ... Metal Layers, 275 ... increased reflection layer, 276 ... first dielectric layer, 277 ... second dielectric layer, 2100 ... projection display device, 2102 ... lamp unit (light source part), 2108 ... dichroic mirror, 2112 ... dichroic prism ( Color synthesis optical system), 2114... Projection lens group (projection optical system).

Claims (8)

A first substrate;
A second substrate facing the first substrate;
An electro-optic layer provided between the first substrate and the second substrate;
A first light-shielding layer provided on one side of the second substrate so as to surround a display area;
Have
The first light shielding layer is provided so as to overlap a reflective metal layer, and a first dielectric layer and a second dielectric layer having a refractive index larger than that of the first dielectric layer are laminated. An electro-optical device comprising: an additional reflection layer. The electro-optical device according to claim 1.
An electro-optical device, wherein an edge of the metal layer, an edge of the first dielectric layer, and an edge of the second dielectric layer overlap in plan view. The electro-optical device according to claim 1,
A plurality of lenses are provided on one side of the second substrate,
The first light shielding layer is provided on one side of the second substrate,
Each of the plurality of lenses is provided with a plurality of concave curved surfaces provided on one surface side of the second substrate, and a lens layer having a refractive index larger than that of the second substrate. And an electro-optical device. The electro-optical device according to claim 3.
The electro-optical device, wherein the first dielectric layer and the second dielectric layer are laminated between the lens layer and the metal layer. The electro-optical device according to claim 4.
The lens layer is silicon oxynitride,
The first dielectric layer is silicon oxide;
The electro-optical device, wherein the second dielectric layer is silicon nitride. The electro-optical device according to any one of claims 1 to 5,
A plurality of pixel electrodes provided on one side of the first substrate;
A second light-shielding layer provided on one side of the second substrate and overlapping each of the plurality of pixel electrodes in plan view;
Have
The second light-shielding layer has a metal layer that is the same as the metal layer of the first light-shielding layer, and an increased reflection layer that is the same layer as the increased reflection layer of the first light-shielding layer. Optical device.   An electronic apparatus comprising the electro-optical device according to any one of claims 1 to 6. The electronic device according to claim 7,
A plurality of electro-optical devices corresponding to each of a plurality of color lights having different wavelength ranges, and a color combining optical system for combining the plurality of color lights emitted from each of the plurality of electro-optical devices,
Among the plurality of electro-optical devices, the electro-optical device corresponding to the color light having the long wavelength region has a thickness of the dielectric layer that is larger than the electro-optical device corresponding to the color light having the short wavelength region. Electronic equipment characterized by its thickness.