JP2019022253A - Semiconductor driving device, and three-phase ac inverter mounted with the same - Google Patents

Abstract

To provide a standardized gate driver capable of downsizing a power unit inside an inverter system.SOLUTION: The present invention relates to a power transformer and an insulation communication element arranged on other substrates formed in a two hierarchical configuration, respectively, in a gate driver substrate as a basic unit. According to the present invention, the gate driver substrate as the basic unit becomes downsized, and thus a power unit inside an inverter system can be downsized. Further, the same gate driver substrate can be used as much as possible to rationalize development, in response to a corresponding request of whether or not size change and a short circuit protection function of a semiconductor element are necessary.SELECTED DRAWING: Figure 2

Description

  The present invention relates to a semiconductor device driving apparatus.

  Insulated Gate Bipolar Transistors (IGBTs) that can be switched at high speed and control large power are widely used in recent years, ranging from small inverters for home use to large inverters used in railways. ing. As a circuit for driving a voltage-driven semiconductor element such as an IGBT, a gate driver that controls on / off of the semiconductor element by controlling a voltage applied to the gate is used.

  Non-Patent Document 1 shows a configuration in which a semiconductor element is driven using an insulated gate driver. The insulated gate driver includes an insulated power transformer, a photocoupler, and a driver IC.

  Japanese Patent Application Laid-Open No. 2004-228561 discloses a technique for facilitating mounting in a device that uses a gate driver.

JP 2009-89512 A

S. Nagai et al. “A Compact GaN Bi-directional Switching Diode with a GaN Bi-directional Power Switch and an Isolated Gate Driver”, in Proc.IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), pp.183- 186, Prague, Czech Republic, June 2016.

  The inventor of the present application diligently studied the downsizing and rationalization of the inverter system using the standardized gate driver, and as a result, the following knowledge was obtained.

  In an inverter system including a gate driver and a semiconductor element, downsizing of the system is required. In particular, there is a high demand for miniaturization in inverters mounted on movable systems such as railways and automobiles. Therefore, the gate driver that is a component is also required to be downsized.

  Non-Patent Document 1 points out that this is one of the factors that increase the volume of the system because the gate driver is composed of discrete elements.

  On the other hand, particularly in gate drivers for applications requiring high breakdown voltage such as for railways, the size of insulating elements such as power transformers and photocouplers must be increased in order to ensure a necessary and sufficient insulation distance. For this reason, there is a problem that it is difficult to reduce the size of the gate driver substrate in order to secure a space for mounting these insulating elements on the gate driver substrate.

  In addition to the basic function of driving a semiconductor element, an additional function such as short circuit protection may be added to the gate driver from the viewpoint of system reliability. It is also necessary to solve the conflicting problems of downsizing the substrate and adding additional functions.

  Japanese Patent Application Laid-Open No. 2005-228561 discloses a gate driver downsizing technique that efficiently mounts an insulating element such as a power transformer or a photocoupler, but does not use a standardized gate driver.

  Rather than developing a gate driver board each time according to the size of the semiconductor element to be driven, the same gate driver board was developed and standardized as much as possible in consideration of the mounting method to the semiconductor element, etc. It is desirable from the viewpoint of development rationalization that it can be applied to semiconductor elements of as many different sizes as possible.

  An object of the present invention relates to providing a standardized gate driver capable of downsizing a power unit in an inverter system.

  The present invention relates to a basic unit gate driver substrate in which a power transformer and an insulated communication element are respectively arranged on separate substrates having a two-layer structure.

  According to the present invention, since the basic unit gate driver substrate is downsized, the power unit in the inverter system can be downsized. Furthermore, the same gate driver substrate can be used as much as possible to meet the demands for changing the size of the semiconductor elements and the necessity of the short-circuit protection function, thereby streamlining development.

Configuration diagram of a railway inverter system according to Example 1 1 is a schematic diagram of a semiconductor drive device according to a first embodiment. Functional block diagram of the semiconductor drive device according to the first embodiment. FIG. 3 is a top view of the semiconductor drive device according to the first embodiment. 1 is a top view of a one-layer board of a semiconductor drive device according to a first embodiment (without a two-layer board). Sectional drawing of the semiconductor drive device concerning Example 1. FIG. Functional block diagram of the semiconductor drive device according to the second embodiment. Top view of the semiconductor drive device according to the second embodiment. Top view of one-layer board of semiconductor drive device according to example 2 (no two-layer board) Sectional drawing of the semiconductor drive device concerning Example 2. FIG. Explanatory drawing of the short circuit protection circuit in the semiconductor drive device concerning Example 2. FIG.

  The embodiment includes a plurality of basic unit gate driver boards having a power transformer that supplies power to the gate driver board, and an insulating communication element that exchanges signals between the command logic unit and the semiconductor element, and the basic unit gate driver. Disclosed is a semiconductor drive device in which a power transformer and an insulated communication element are disposed on separate substrates each having a two-layer structure.

  Further, in the embodiment, the semiconductor drive device drives a three-phase AC inverter, and the basic unit gate driver substrates are arranged in the horizontal direction by three units, and the basic unit gate driver substrate in the horizontal direction is arranged. Disclosed is a semiconductor drive device whose width is narrower than the width in the short direction of a semiconductor module of a three-phase AC inverter.

  Further, in the embodiment, the distance of the gate wiring from the gate driver output portion of the basic unit gate driver substrate to the upper arm semiconductor module, and from the gate driver output portion of the basic unit gate driver substrate to the lower arm semiconductor module. Disclosed is a semiconductor drive device in which the distance of the gate wiring is the same in each phase.

  In addition, the embodiment discloses a semiconductor drive device in which an insulated communication element and a high-voltage side circuit are arranged on the same substrate of a basic unit gate driver substrate.

  In addition, the embodiment discloses a semiconductor drive device in which a short circuit protection circuit that protects a short circuit of a semiconductor element is arranged on another substrate at a different level from the substrate on which the insulated communication element is arranged.

  In addition, the embodiment discloses a semiconductor drive device in which the short circuit protection circuit and the high voltage side circuit are divided into different substrates in the output terminal portion of the semiconductor element.

  In addition, the embodiment discloses a semiconductor drive device in which the short-circuit protection circuit and the high-voltage side circuit are divided into different substrates in the electrically disconnected electrical element.

  In addition, the embodiment discloses a semiconductor drive device in which the short-circuit protection circuit and the high-voltage side circuit are divided into different substrates at locations where they are connected with low impedance to locations that are electrically stable when the semiconductor element is driven. To do.

  In the embodiment, a three-phase AC inverter equipped with a semiconductor drive device is disclosed.

  The above and other novel features and effects of the present invention will be described below with reference to the drawings. The drawings are used exclusively for understanding the invention and do not reduce the scope of rights.

  FIG. 1 is a configuration diagram of a railway inverter system according to the present embodiment.

  In the railway inverter system according to this embodiment, the power unit 100 is constituted by the IGBT 101 and the filter capacitor 103. In each UVW phase, IGBTs 101 are connected in series, and diodes 102 are connected in parallel to each IGBT 101 so that the flow direction is opposite. Each IGBT 101 is provided with a gate driver 104 that drives the IGBT in accordance with a command from the command logic unit 105. The connection point between the upper IGBT (upper arm) and the lower IGBT (lower arm) of each UVW phase is connected to the motor 106 as an output of the power unit 100.

  The electric power from the overhead line 107 is input to the high voltage side of the filter capacitor 103 for smoothing DC power and removing noise through the current collector 108, the plurality of circuit breakers 109, and the filter reactor 110. The low-pressure side of the filter capacitor 103 is connected to a rail 112 that is an electrical ground via a wheel 111. The railway inverter system generates a three-phase alternating current by alternately switching the UVW-phase IGBTs in the power unit and sends it to the motor 106. A gate driver 104 disposed in the power unit 100 together with the IGBT 101 and the filter capacitor 103 drives the IGBT 101 in accordance with a command from the command logic unit 105. The command logic unit 105 includes an arithmetic device, a memory, and input / output means, and outputs a command for driving the IGBT according to a predetermined program. In the semiconductor drive device according to the present embodiment, an example in which an IGBT is driven as an element will be described. However, the element is not limited to an IGBT and may be a voltage-driven element, for example, a MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor: metal-oxide-semiconductor field effect transistor).

  FIG. 2 is a schematic diagram of the semiconductor drive device according to the present embodiment, and shows a mounting form of the IGBT and the gate driver in the power unit 100 shown in FIG. The IGBT module 1 has three UVW phases arranged side by side, and the IGBT modules of the upper and lower arms are further arranged vertically in each phase, and is composed of a total of six. The gate driver 2 for driving these IGBTs is connected to the IGBT module 1 via the gate wiring 3.

  The gate driver 2 has a configuration in which three units of basic unit gate driver substrates 4 are arranged horizontally. In this embodiment, the gate driver substrate 4 of each basic unit has a 2-in-1 configuration capable of driving IGBTs for two arms of the upper arm and lower arm of each phase of UVW. In FIG. 2, the IGBT module 1 is a 1 in 1 type in which the upper arm and the lower arm are separate elements. However, a 2 in 1 type in which the IGBTs of the upper and lower arms are mounted on the same module may be used. Further, in this embodiment, the basic unit gate driver substrate 4 has a 2-in-1 configuration in which the upper arm driving and the lower arm driving are mounted on the same substrate, but both are in different substrates. The thing of a structure may be sufficient.

  The gate driver substrate 4 of the present embodiment has a two-layer configuration as will be described later, and includes a one-layer motherboard 5 and a two-layer power supply substrate 6. The power supply substrate 6 is a substrate that supplies power to the gate driver substrate 4 and has a power transformer 7 mounted thereon. In FIG. 2, the 6-in-1 configuration in which the UVW three-phase components are integrally formed by a single substrate is shown as the power-supply substrate 6, but for example, a 2-in-1 power-supply substrate that is a separate substrate for each UVW phase. A configuration in which three units are arranged horizontally may be used.

  The width of the basic unit gate driver substrate 4 (B in FIG. 2) is preferably narrower (B <A) than the width of one IGBT module 1 (A in FIG. 2). As a result, the width when the basic unit gate driver substrates 4 are arranged horizontally for three units is within the width of the IGBT modules 1 arranged horizontally for the UVW three phases, which leads to miniaturization of the power unit.

  Further, as shown in FIG. 2, the gate driver 4 of the basic unit is arranged side by side for three phases, whereby the distance of the gate wiring 3a from the gate driver output unit 8 to the IGBT module 1a of the upper arm, and the gate driver output unit Since the distance of the gate wiring 3b from 8 to the lower-arm IGBT module 1b is equal among the UVW phases, the drive waveform between the phases can be made uniform.

  FIG. 3 is a functional block diagram of the semiconductor drive device (gate driver for one arm drive) according to the present embodiment, showing the mutual connection of each circuit block. The gate driver of this embodiment is composed of a low voltage side circuit 9, an insulating communication element 10, a high voltage side circuit 11 and a power supply substrate 6. The low-voltage side circuit 9 receives a drive command from the command logic unit, and the insulation communication element 10 transmits the drive command to the high-voltage side circuit 11 while insulating between the logic unit side (low voltage) and the IGBT side (high voltage). Secure. The power supply substrate 6 includes a power transformer 7 and a rectifier circuit 12, transforms and rectifies the AC power input to the power supply substrate 6, and supplies DC power to the high-voltage circuit 11. At the same time, the power transformer 7 ensures insulation between the logic unit side (low voltage) and the IGBT side (high voltage).

  The insulated communication element 10 is an element that incorporates an LED and a photodiode, like a photocoupler, and transmits and receives signals internally by light, while ensuring insulation between the low voltage side and the high voltage side, As long as signals can be exchanged between them, it is not limited to a photocoupler.

  In the gate driver of this embodiment, the high voltage side circuit 11 includes a drive circuit and a short circuit protection circuit for driving the IGBT module 1. The short circuit protection circuit in the present embodiment is a circuit that realizes a function of detecting an abnormality when the IGBT is in a short circuit state and shutting down the IGBT before the breakdown expands to minimize the breakdown scale.

  In the gate driver of this embodiment, as a means for detecting the short-circuit state of the IGBT, an electromotive voltage (−Le * dIc) generated by a change amount (dIc / dt) of the main current flowing through the IGBT and a parasitic inductance (Le) on the emitter side. / dt) to detect an overcurrent condition. As shown in FIG. 3, the emitter side parasitic inductance (Le) is a parasitic inductance between the sense emitter terminal (E) and the main emitter terminal (ME). Since a large electromotive voltage is generated, a short circuit can be detected.

  The method of short circuit detection is not limited to this method, and any method can be used as long as a short circuit state can be detected. For example, a method of detecting an abnormality in the main current with the voltage value applied to the shunt resistor connected to the emitter, a method of detecting the current flowing through the IGBT with a current detection element such as a CT (current transformer), or a collector voltage instead of the current value A method of detecting a short circuit by utilizing a phenomenon that the collector voltage rises at the time of a short circuit may be used.

  FIG. 4 is a top view of the semiconductor drive device according to the present embodiment, and shows a top view of the basic unit gate driver substrate shown in FIG. As described above, the gate driver substrate according to the present embodiment has a two-layer structure. The lower portion (gray portion) in FIG. 4 is the two-layer power supply substrate 6 including the power transformer 7, and the upper portion (white portion) is 1. A hierarchical motherboard 5 is shown.

  FIG. 5 is a top view of the one-layer board (without the two-layer board) of the semiconductor drive device according to the present embodiment, and corresponds to a view in which the two-layer power supply board 6 is removed from FIG. The low voltage side circuit 9, the insulation communication element 10, the high voltage side circuit 11, and the gate driver output unit 8 are mounted on the one-layer motherboard 5. The low voltage side circuit 9 and the high voltage side circuit 11 are insulated via the insulating communication element 10 and simultaneously transmit and receive signals. The first-layer motherboard 5 and the second-layer power supply board 6 are physically and electrically connected to each other by a board connector A13 and a board connector B14.

  FIG. 6 is a cross-sectional view of the semiconductor drive device according to this example. As shown in FIG. 6, the gate driver of the basic unit includes a power transformer 7 and an insulated communication element 10 as a set, and the power transformer 7 and the insulated communication element 10 are respectively on different substrates. Separated into two layers.

  A drive command is input from the command logic unit to the power supply board 6 of the second hierarchy, and is transmitted to the insulated communication element 10 of the first hierarchy via the board connector A13 to drive the IGBT. Also, the AC power input to the power transformer 7 is input to the power supply board 6 of the second hierarchy, and the DC power source transformed and rectified by the power transformer 7 and the rectifier circuit 12 is connected to the high voltage side circuit 11 via the board connector B14. To supply.

  As described above, since the power transformer 7 and the insulating communication element 10 play a role of insulating the high voltage part and the low voltage part, as shown in FIGS. 4 to 6, it is necessary to be disposed at a position across the high voltage part and the low voltage part. There is. Therefore, when all the parts constituting the gate driver are arranged on one (one layer) substrate, the power transformer 7 and the insulated communication element 10 are arranged in parallel to each other. There is a problem that the width of the gate driver substrate (B in FIG. 2) cannot be made narrower than the width in which both are arranged side by side, and there is a limit to downsizing (narrowing).

  Therefore, by adopting a two-layer configuration in which the power transformer 7 is disposed in the upper layer of the insulating communication element 10 as described above, the width of the basic unit gate driver substrate 4 (B in FIG. 2) can be reduced. Since the three-phase array width can be reduced, the mounting efficiency of the gate driver is improved, and the power unit can be downsized. As IGBT current density increases, the size of IGBT modules (A in Fig. 2) also tends to be reduced. However, the size (width) of the gate driver substrate can be reduced by two-layer mounting, so B <A As far as possible, the same gate driver substrate can be used to deal with changes in the size of IGBT modules, which can streamline development.

  As shown in FIG. 6, in this embodiment, since the power supply board 6 is arranged in two layers and the insulated communication element 10 is arranged in one layer, the insulated communication element 10 and the high voltage side circuit 11 are both on the mother board 5 in the first layer. The board connector B14 is not disposed between the two. With this configuration, since the interface between the output part of the insulated communication element 10 through which a weak signal current of about several mA flows and the high voltage side path 11 can be arranged on the same board, the electromagnetic field spatially superimposed on the board-to-board connector B14 There are advantages of preventing malfunction due to noise and ensuring noise resistance.

  On the other hand, a capacitor 15 for stabilizing the DC power generated by the rectifier circuit 12 is mounted on the power supply board 6, and the board connector is mounted between the power supply board 6 and the motherboard 5. Even if B14 is interposed, the influence of malfunction due to electromagnetic field noise can be reduced.

  Furthermore, when the power transformer 7 including the power transformer 7 is separated into two layers, and the power transformer 7 is changed (for example, the specification of the transformer differs from the conventional line to the Shinkansen), the power of the two layers It is only necessary to replace the transformer 7. Since the one-layer mother board 5 can be shared, there is an advantage that the configuration of the gate driver can be standardized and the design and development can be facilitated.

  In the present embodiment, unlike the first embodiment, the function relating to short circuit protection is divided into different substrates. Hereinafter, the difference from the first embodiment will be mainly described.

  FIG. 7 is a functional block diagram of the semiconductor drive device according to the present embodiment. The high-voltage side circuit 11 of the first embodiment includes a short-circuit protection function in addition to the basic function of driving the IGBT. In this embodiment, the circuit 25 corresponding to the short-circuit protection function is replaced by a high-voltage side circuit 11a. It arrange | positions at the short circuit protection board | substrate 16 which is a board | substrate different from the board | substrate arrange | positioned.

  FIG. 8 is a top view of the semiconductor drive device according to the present embodiment. The upper and lower parts (gray part) in FIG. 8 are two-layer substrates, and the central part (white part) is a one-layer substrate. In the present embodiment, the short circuit protection substrate 16 on which a circuit corresponding to the short circuit protection function is disposed is disposed in the upper two layers of the mother board 5.

  FIG. 9 is a top view of the one-layer board (without the two-layer board) of the semiconductor drive device according to the present embodiment, and corresponds to a view in which the two-layer power supply board 6 and the short-circuit protection board 16 are removed from FIG. In the present embodiment, the short circuit protection function is not included in the high voltage side circuit 11a, and the function of the high voltage side circuit 11a is limited to the drive function of the IGBT which is the minimum necessary basic function. Further, on the high voltage side of the mother board 5, a board connector C17 for connecting the first level mother board 5 and the second level short circuit protection board 16 corresponds to the two high voltage side circuits 11a (drive only) of the mother board 5, respectively. Two are provided.

  With this configuration, the area of the portion corresponding to the short-circuit protection circuit in the one-layer mother board 5 is reduced, so that the basic unit gate driver 4 can be further downsized as compared with the first embodiment. In particular, a gate driver for railway use requires a high-voltage insulation because the power supply voltage is higher than that of an automobile or industrial gate driver. In the power transformer 7 and the insulated communication element 10 responsible for insulation, a necessary and sufficient spatial distance (for example, 20 mm) must be ensured between the low voltage side and the high voltage side. In the example shown in FIG. It is necessary to secure a necessary and sufficient spatial distance (C in FIGS. 5 and 9) in the direction. On the other hand, in order to adapt to the downsizing of the power unit, the gate driver substrate is required to be downsized in the longitudinal direction in addition to the downsizing of the width. Therefore, as in this configuration, the function of the high-voltage side circuit 11a of the mother board 5 in the first layer is limited to the IGBT driving function that is the minimum necessary basic function, and the short-circuit protection function that is an additional function is made on a separate board. Thus, there is an advantage that the longitudinal direction of the gate driver can be further reduced as compared with the first embodiment.

  FIG. 10 is a cross-sectional view of the semiconductor drive device according to this example. The short-circuit protection board 16 is connected to the high-voltage side circuit 11a of the first-layer motherboard 5 via the board connector C17, and the power supply and detection signals necessary for the operation of the short-circuit protection board 16 are sent to the motherboard 5 via the pins of the board connector C17. Receive from. At the same time, the short-circuit protection board 16 determines whether or not the IGBT is short-circuited based on the detection signal. If it is determined that the IGBT is short-circuited, a signal for cutting off the IGBT is transmitted to the motherboard 5 via the pin of the board connector C17. And protect normal IGBTs from destruction. The level and height of the short-circuit protection substrate 16 are the same as those of the power supply substrate 6, but are not limited to this. For example, the short-circuit protection substrate 16 is the top substrate of a three-layer structure and is higher than the power supply substrate 6. May be.

  When the short circuit protection function 16 is not required by connecting the short circuit protection circuit board 16 to the motherboard 5 via the circuit board connector C17 as in this configuration, the short circuit protection circuit board 16 can be removed from the motherboard 5 so that the user side Regardless of whether the short-circuit protection function is required, the one-layer motherboard 5 can be shared (standardized). Therefore, there is an advantage that it is not necessary to newly develop a gate driver substrate having a different specification depending on the necessity of the short-circuit protection function.

  FIG. 11 is an explanatory diagram of a two-level short-circuit protection circuit in the semiconductor drive device according to the present embodiment. The short-circuit protection substrate 16 receives a power supply necessary for operation and a main current detection signal flowing through the IGBT module 1 via the substrate connector C17. In this embodiment, an electromotive voltage (= −Le * dIc / dt, hereinafter referred to as “Le electromotive voltage”) generated by the parasitic inductance (Le) on the emitter side of the IGBT is used as a resistor 18 and a resistor 19 mounted on the motherboard 5. The signal divided by is input to the overcurrent detection circuit 20 in the short circuit protection substrate 16 as a detection signal. The reason why voltage is divided by the resistor 18 and the resistor 19 is that the Le electromotive voltage at the time of short circuit may reach 100V or more. Therefore, by dividing the voltage, the input voltage to the overcurrent detection circuit 20 is reduced and the elements in the circuit are destroyed. This is to prevent it from being done. The overcurrent detection circuit 20 is an integration circuit using a comparator, and the overcurrent flowing through the IGBT is compared by comparing the integrated value of the input Le electromotive voltage (-Le * dIc / dt) with a preset value. The presence or absence of can be detected.

  A short circuit detection circuit 21 is connected to the subsequent stage of the overcurrent detection circuit 20. The short circuit detection circuit 21 includes a low-pass filter 22, a one-shot IC 23, and a soft cutoff MOSFET 24. If overcurrent continues to flow through the IGBT for a certain time or more, the output of the overcurrent detection circuit 20 continues to be input for a certain time or more and is input to the low-pass filter 22. 21 determines that the IGBT is short-circuited. At this time, the one-shot IC 23 subsequent to the low-pass filter 22 outputs a pulse signal for a certain time, and the soft cutoff MOSFET 24 connected to the negative power source (−Vm) of the gate driver is turned on (a cutoff command is output). . Since the soft cutoff MOSFET 24 is connected to the gate terminal (G) of the IGBT via the substrate connector C17, before the breakdown increases at the time of a short circuit, the IGBT gate is reduced to the negative power supply (−Vm). The breakdown scale can be minimized by shutting down the IGBT. In this embodiment, the one-shot IC 23 is used. However, any other element may be used as long as it has a function capable of outputting the cutoff command by turning on the soft cutoff MOSFET 24 for a certain period of time.

  The division positions of the high-voltage side circuit 11a, which is the IGBT drive circuit in this embodiment, and the short-circuit protection circuit 16, that is, the positions for transmitting and receiving signals via the board connector C17 are as follows.

(1) Where sufficient current (for example, 10 mA or more) flows, such as the output section of a MOSFET or BJT. For example, the output part of the soft cutoff MOSFET 24 (D point in FIG. 11)
(2) Locations that are electrically disconnected (open) due to the operating principle, such as the output of an open collector (or drain) comparator (not shown in FIG. 11)
(3) A location connected to a location where the potential is stabilized, such as a power line, with low impedance. For example, a location connected to the ground potential via a low impedance resistor 19 (point F in FIG. 11)
In the above locations, (1) a sufficient current can be secured, (2) the electrical principle is disconnected due to the operating principle, and (3) the potential is stabilized, so the circuit must be divided at that location. Thus, even if the board connector C (17) is interposed at the location, there is an advantage that the noise resistance is not lowered and malfunction due to electromagnetic field noise superimposed on the board-to-board connector C17 can be prevented.

DESCRIPTION OF SYMBOLS 1,1a, 1b ... IGBT module (semiconductor element), 2 ... Gate driver, 2a ... Gate driver (for 1 arm drive) 3 ... Gate wiring, 4 ... Gate driver substrate, 5 ... Motherboard, 6 ... Power supply board, 7 ... Power transformer, 8 ... Gate driver output unit, 9 ... Low voltage side circuit, 10 ... Insulated communication element, 11 ... High voltage side Circuit 11a High voltage side circuit (without short circuit protection function) 12 Rectifier circuit 13 Board connector A 14 Board connector B 15 Capacitor 16 Short circuit protection Substrate, 17 ... Board connector C, 18 ... Resistance, 19 ... Resistance, 20 ... Overcurrent detection circuit, 21 ... Short-circuit detection circuit, 22 ... Low pass filter, 23 ... One-shot IC, 24 ... Soft blocking MOSFE T, 25: Circuit corresponding to a short-circuit protection function, + Vp: Positive power supply voltage of the gate driver, -Vm: Negative power supply voltage of the gate driver, 100: Power unit, 101: IGBT , 102 ... Diode, 103 ... Filter capacitor, 104 ... Gate driver, 105 ... Command logic unit, 106 ... Motor, 107 ... Overhead wire, 108 ... Current collector, 109 ..Interrupters, 110 ... filter reactors, 111 ... wheels

Claims (9)

A semiconductor drive device comprising a plurality of basic unit gate driver substrates having a power transformer for supplying power to the gate driver substrate, and an insulating communication element for transferring signals between the command logic unit and the semiconductor element,
In the basic unit gate driver substrate, the power transformer and the insulating communication element are respectively arranged on separate substrates having a two-layer structure. The semiconductor drive device according to claim 1,
The semiconductor drive device drives a three-phase AC inverter,
The basic unit gate driver substrates are arranged in three units in the horizontal direction,
The width of the lateral direction of the gate driver substrate of the basic unit is narrower than the width of the short direction of the semiconductor module of the three-phase AC inverter. The semiconductor drive device according to claim 2,
The distance of the gate wiring from the gate driver output part of the gate driver board of the basic unit to the semiconductor module of the upper arm, and the gate wiring from the gate driver output part of the gate driver board of the basic unit to the semiconductor module of the lower arm The distance between the two is the same for each phase. In the semiconductor drive device according to any one of claims 1 to 3,
The semiconductor drive device, wherein the insulated communication element and the high voltage side circuit are arranged on the same substrate of the basic unit gate driver substrate. The semiconductor drive device according to claim 1,
A semiconductor drive device, wherein a short circuit protection circuit for protecting a short circuit of the semiconductor element is disposed on a different substrate different from the substrate on which the insulated communication element is disposed. The semiconductor drive device according to claim 5,
The semiconductor drive device, wherein the short circuit protection circuit and the high voltage side circuit are divided into different substrates at an output terminal portion of the semiconductor element. The semiconductor drive device according to claim 5,
The semiconductor drive device, wherein the short circuit protection circuit and the high voltage side circuit are divided into different substrates in the electrically disconnected electrical element. The semiconductor drive device according to claim 5,
The semiconductor drive device, wherein the short-circuit protection circuit and the high-voltage side circuit are divided into different substrates at locations where they are connected with low impedance to locations that are electrically stable when the semiconductor element is driven.   A three-phase AC inverter equipped with the semiconductor drive device according to claim 1.

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