JP2019021681A - Through electrode substrate and manufacturing method of the same - Google Patents

Abstract

To provide good adhesion between a through conductor and a directly overlying insulating layer.SOLUTION: A through electrode substrate 100a includes: a substrate 102 having a through hole 116 penetrating a first surface 102s1 and a second surface 102s2 opposed to the first surface; a through electrode 106 disposed on the inner surface of the through hole 116; a through body 107 which is in contact with the through electrode 106 and fills the through hole 116 and has a first convex portion 117 on a first exposed surface on the first surface side; and a first insulating layer 108a disposed on the first surface.SELECTED DRAWING: Figure 1

Description

  The present disclosure relates to a through electrode substrate and a method for manufacturing the through electrode substrate.

  In recent years, integrated circuits have become more miniaturized and complicated with higher performance of integrated circuits. Connection terminals are arranged in the integrated circuit, and power and logic signals necessary for circuit operation are input from an external device (chip) through the connection terminals. When a chip having a different connection terminal pitch and an integrated circuit are connected, an interposer serving as an intermediary substrate for converting the pitch size of the connection terminals is used. In the interposer, an integrated circuit is mounted on a wiring arranged on one surface of a substrate, and a chip is mounted on a wiring arranged on the other surface. The wirings arranged on both surfaces of the substrate of the interposer are connected by through electrodes that penetrate the substrate.

  The through electrode is formed by plating a through conductor on the inner surface of the through hole formed in the substrate. The inside of the through conductor is filled with a resin. Further, the exposed surface of the filled resin on the substrate is subjected to lid plating, so that a connection terminal can be connected immediately above the through electrode. Patent Document 1 discloses lid plating having a shape embedded inside a through conductor.

JP 2004-95597 A

  However, in order to manufacture the interposer described in Patent Document 1, it is necessary to add a step of forming a recess with a laser in order to embed lid plating after filling the resin in the through hole. Moreover, it aims at the improvement of the connection reliability of a penetration conductor and cover plating, and is not considered about adhesiveness with an insulating layer immediately above.

  An object of the embodiment of the present disclosure is to provide a substrate with improved adhesion of a film directly above a through hole.

  A through electrode substrate according to an embodiment of the present disclosure is disposed on a first surface and a substrate having a through hole penetrating a second surface facing the first surface, and an inner surface of the through hole. A penetrating electrode, a penetrating body that is in contact with the penetrating electrode, fills the through-hole, and has a first protrusion on the first exposed surface on the first surface side, and is disposed on the first surface. A first insulating layer.

  The upper surface of the first protrusion may protrude from the first surface toward the first insulating layer in the stacking direction.

  The first exposed surface may be recessed from the first surface to the second surface side in the stacking direction.

  The first convex portion may have a reverse taper shape.

  The first insulating layer further includes a first electrode that covers the first exposed surface and is electrically connected to the through electrode, and the first insulating layer has a first opening that exposes the first electrode. May be.

  The penetration body may further include a second insulating layer disposed on the second surface, further including a second convex portion on the second exposed surface on the second surface side.

  The upper surface of the second convex portion may protrude from the second surface toward the second insulating layer in the stacking direction.

  The second exposed surface may be recessed from the second surface to the first surface side in the stacking direction.

  The second convex portion may have a reverse taper shape.

  The semiconductor device further includes a second electrode that covers the second exposed surface and is electrically connected to the through electrode, and the second insulating layer has a second opening that exposes the second electrode. May be.

  The through electrode may electrically connect a first wiring disposed on the first surface and a second wiring disposed on the second surface.

  The diameter of the first opening end of the through hole in the first surface may be larger than the diameter of the second opening end of the through hole in the second surface.

  The penetrating body may be an insulating organic resin material having photo-curing property and thermosetting property.

  A semiconductor device according to an embodiment of the present disclosure includes a through electrode substrate, an LSI substrate connected to the through electrode of the substrate, and a semiconductor chip connected to the through electrode of the substrate.

  A method of manufacturing a through electrode substrate according to an embodiment of the present disclosure includes forming a through hole penetrating a first surface and a second surface opposite to the first surface in the substrate, and an inner surface of the through hole. A through electrode is formed on the first exposed surface on the first surface side, the penetrating body is formed in contact with the through electrode, the first exposed surface on the first surface side, Forming a first insulating layer on the surface.

  The upper surface of the first convex portion may protrude from the first surface toward the first insulating layer in the stacking direction.

  The first exposed surface may be recessed from the first surface to the second surface side in the stacking direction.

  The first convex portion may be formed in a reverse taper shape.

  A first electrode that covers the first exposed surface and is electrically connected to the through electrode is further formed, and a first opening that exposes the first electrode is formed in the first insulating layer. May be.

  A second protrusion may be further formed on the second exposed surface of the penetrating body on the second surface side, and a second insulating layer may be further formed on the second surface.

  The upper surface of the second convex portion may protrude from the second surface toward the second insulating layer in the stacking direction.

  The second exposed surface may be recessed toward the first surface in the stacking direction from the second surface.

  You may form the said 2nd convex part in a reverse taper shape.

  A second electrode that covers the second exposed surface and is electrically connected to the through electrode is further formed, and the second insulating layer forms a second opening that exposes the second electrode. May be.

  According to the embodiment of the present disclosure, it is possible to provide a substrate with improved adhesion of a film immediately above the through hole.

It is a sectional view showing the composition of the penetration electrode substrate concerning one embodiment of this indication. It is an expanded sectional view showing the composition of the penetration electrode substrate concerning one embodiment of this indication. It is sectional drawing for demonstrating the manufacturing method of the penetration electrode substrate which concerns on one Embodiment of this indication. It is sectional drawing for demonstrating the manufacturing method of the penetration electrode substrate which concerns on one Embodiment of this indication. It is sectional drawing for demonstrating the manufacturing method of the penetration electrode substrate which concerns on one Embodiment of this indication. It is an expanded sectional view showing the composition of the penetration electrode substrate concerning one embodiment of this indication. It is a sectional view showing the composition of the penetration electrode substrate concerning one embodiment of this indication. It is an expanded sectional view showing the composition of the penetration electrode substrate concerning one embodiment of this indication. It is sectional drawing for demonstrating the manufacturing method of the penetration electrode substrate which concerns on one Embodiment of this indication. It is a sectional view showing the composition of the penetration electrode substrate concerning one embodiment of this indication. It is a figure showing a semiconductor device concerning one embodiment of this indication. It is a figure showing a semiconductor device concerning one embodiment of this indication. It is a figure showing a semiconductor device concerning one embodiment of this indication. It is a cross-sectional image of the penetration electrode substrate formed by the manufacturing method of the penetration electrode concerning one embodiment of this indication.

  Hereinafter, the content of the present disclosure will be described with reference to the drawings. However, the present disclosure includes many different modes and should not be construed as being limited to the content of the disclosure exemplified below. In order to clarify the description, the drawings may be schematically represented with respect to the width, thickness, shape, and the like of each part as compared to the actual embodiment, but this is merely an example, and the contents of the present disclosure are not necessarily limited. It is not limited. In addition, in the present disclosure, when an element described in one drawing and an element described in another drawing have the same or corresponding relationship, , B, etc., may be attached and repeated description may be omitted as appropriate. In addition, the letters “first” and “second” attached to each element are convenient signs used to distinguish each element, and have no meaning unless otherwise specified. .

  In this disclosure, when a member or region is “on” another member or region, this is not limited to the case where it is directly above another member or region unless there is a particular limitation. Including the case of being above. That is, the case where another component is included between a member or a region above another member or region is also included. Similarly, if a member or region is “below” another member or region, this is not the case unless it is directly below another member or region, unless there is a particular limitation. Including the case below. That is, the case where another component is included between a member or a region below another member or region is also included.

  In the following description, when a plurality of members are stacked on the support substrate, the direction away from (or away from) the support substrate is referred to as the upper layer or the upper layer with reference to the support substrate unless otherwise specified, and vice versa. Or the lower layer.

<First Embodiment>
[Structure of the through electrode substrate]
FIG. 1 shows a cross-sectional structure of a through electrode substrate 100a according to the present disclosure. The through electrode substrate 100a includes a support substrate (substrate) 102 including a first surface 102s1 and a second surface 102s2 facing the first surface, and a multilayer wiring structure disposed on the first surface 102s1 of the support substrate 102. Including a body 104. FIG. 1A is a cross-sectional view in the stacking direction of the through electrode substrate 100a according to the present disclosure. FIG. 1B shows an upper surface of the first surface 102s1 of the support substrate 102 excluding the multilayer wiring structure 104 (the first wiring layer 118a and the first insulating layer 108a) from the through electrode substrate 100a according to the present disclosure. FIG. In the present embodiment, the multilayer wiring structure 104 includes a single wiring layer (first wiring layer 118a), a single insulating layer (first insulating layer 108a) on the first surface of the support substrate 102. However, the present invention is not limited to this structure. For example, a plurality of wiring layers and insulating layers may be repeatedly stacked, and a multilayer wiring structure is also disposed on the second surface 102s2. Alternatively, an element such as a transistor may be arranged.

  The support substrate 102 includes a through electrode 106 that penetrates the first surface 102s1 and the second surface 102s2. The through electrode 106 is provided in a through hole 116 provided in the support substrate 102. The through electrode 106 is disposed along the inner surface of the through hole 116. The end portion (open end) of the through electrode 106 extends at least to the first surface 102s1 and the second surface 102s2 of the support substrate 102. Furthermore, the end portion of the through electrode 106 may extend over the first surface 102 s 1 and the second surface 102 s 2 of the support substrate 102. A through body 107 is disposed inside the through electrode 106. In the present embodiment, a filling resin is disposed as a penetrating body. The through body 107 contacts the inner surface of the through electrode 106 and fills the through hole 116. In other words, the through electrode 106 is interposed between the support substrate 102 and the through body 107. That is, the through electrode 106 is filled with the through body 107 in the center as viewed in the stacking direction of the through electrodes 106. By having such a configuration, it is not necessary to fill the entire inside of the through hole 116 with a conductor. That is, in the manufacturing process described later, since the time required for forming the through electrode 106 is shortened and the material cost is reduced as compared with the conventional bottom-up plating process, the through electrode substrate can be provided at low cost. it can. The configuration of the penetrating body 107 will be described in detail later.

  In the present embodiment, the through hole 116 provided in the support substrate 102 is erected perpendicular to the first surface 102s1 of the support substrate 102, but the inner side surface may be an inclined surface. . In other words, the inner side surface of the through hole 116 may have an inclined surface such that the side surface is visually recognized when the support substrate 102 is viewed from the upper surface or the lower surface. When the through electrode 106 is formed on the inner side surface of the through-hole 116 from one surface direction of the support substrate 102 using the sputtering method, the support substrate 102 has an inclined surface whose side surface is visually recognized when viewed from the one surface direction. If it is, formation of the penetration electrode 106 becomes easy.

  The multilayer wiring structure 104 includes a first insulating layer 108a and a first wiring 118a disposed on the lower layer side of the first insulating layer 108a. The first wiring 118 a is interposed between the first insulating layer 108 a and the support substrate 102. The first wiring 118a is electrically connected to the through electrode 106 at one end of the first wiring 118a. Further, the first wiring 118a is electrically connected to, for example, a wiring arranged on the external substrate or the upper layer side through the opening 128a provided in the first insulating layer 108a at the other end of the first wiring 118a. It may be connected. In the present embodiment, one first wiring 118a is arranged, but the present invention is not limited to this configuration, and a plurality of the first wirings 118a may be included.

  Next, the configuration of the penetrating body 107 will be described in detail with reference to FIG. FIG. 2 is an enlarged cross-sectional view in a region A of FIG. The penetrating body 107 includes a first convex portion 117 on the first exposed surface 107 s 1 on the first surface 102 s 1 side of the support substrate 102. The first protrusion 117 protrudes from the first exposed surface 107s1. The first protrusion 117 is embedded in the first insulating layer 108a.

  The upper surface 117s1 of the first protrusion protrudes toward the first insulating layer 108a in the stacking direction from the first exposed surface 107s1. The height t1 in the stacking direction from the first exposed surface 107s1 to the upper surface 117s1 of the first convex portion is preferably in the range of 10 μm to 25 μm. In the present embodiment, the upper surface 117s1 of the first protrusion protrudes toward the first insulating layer 108a in the stacking direction from the first surface 102s1. Furthermore, it is preferable that the upper surface 117 s 1 of the first protrusion protrudes toward the first insulating layer 108 a in the stacking direction from the upper end of the through electrode 106.

  On the other hand, the first exposed surface 107s1 is recessed from the upper end of the through electrode 106 toward the second surface 102s2 in the stacking direction. The height t2 in the stacking direction from the first exposed surface 107s1 to the upper end of the through electrode 106 is preferably in the range of 0 μm to 10 μm. Further, the first exposed surface 107s1 is preferably recessed from the first surface 102s1 toward the second surface 102s2 in the stacking direction.

  In this embodiment, the 1st convex part 117 is reverse taper shape. The side surface 117s2 of the first convex portion 117 is inclined at an acute angle with respect to the first exposed surface 107s1. The angle θ between the side surface 117s2 of the first protrusion 117 and the first exposed surface 107s1 is preferably in the range of 60 ° to 85 °. However, the present invention is not limited to this. For example, the first protrusion 117 may have a columnar shape or a tapered shape as described later. That is, the angle θ1 formed by the side surface 117s2 of the first convex portion 117 and the first exposed surface 107s1 may be in the range of 60 ° to 120 °.

  In the present embodiment, the first convex portion 117 is inclined substantially linearly. However, the present invention is not limited to this, and the first protrusion 117 may be nonlinear. For example, the side surface 117s2 of the first convex portion 117 may be a curved surface that is convex or concave toward the center portion in the stacking direction. Further, the first convex portion 117 is substantially symmetric with respect to the central axis viewed in the stacking direction, but may be asymmetrical.

  The first protrusion 117 is embedded in the first insulating layer 108a. When the penetrating body 107 includes the first protrusion 117, the contact area between the penetrating body 107 and the first insulating layer 108a can be increased, and the adhesion can be improved. The first insulating layer 108 a is fitted to the first convex portion 117. Since the first convex portion 117 has such a structure (height, angle, etc.), the first convex portion 117 of the penetrating body 107 and the first insulating layer 108a are fitted to each other, The adhesion with the first insulating layer 108a can be further improved. By improving the adhesion between the penetrating body 107 and the first insulating layer 108a, the first wiring 118a interposed between the supporting substrate 102 having the penetrating body 107 and the penetrating electrode 106 and the first insulating layer 108a. Adhesion with can also be improved. That is, peeling of the supporting substrate 102 having the through body 107 and the through electrode 106 from the first insulating layer 108a and the first wiring 118a can be prevented, and the reliability of the through electrode substrate can be improved. .

[Method of manufacturing through electrode substrate]
Next, the manufacturing method of the through electrode substrate according to the present embodiment will be described in detail with reference to FIGS. 3 to 5 are cross-sectional views for explaining the method of manufacturing the through electrode substrate according to this embodiment.

  FIG. 3A illustrates a method for forming the through hole 116 in the support substrate 102. As the support substrate 102, for example, a glass substrate is used. Further, a semiconductor substrate such as a silicon substrate may be used as the support substrate 102. The through electrode substrate 100a using the support substrate 102 is also referred to as a glass through electrode substrate (TGV) when a glass substrate is used, and a silicon through electrode substrate when a silicon substrate is used. It is also called (TSV: Through Silicon Via). The thickness t of the support substrate 102 can be appropriately selected within a range of 100 μm to 700 μm, for example.

  The support substrate 102 has a first surface 102s1 and a second surface 102s2 that faces the first surface. In the support substrate 102, at least one through hole 116 penetrating from the first surface 102s1 to the second surface 102s2 is formed. The through-hole 116 is formed by forming a corresponding mask, dry etching processing such as RIE (Reactive Ion Etching), DRIE (Deep RIE), sand blast processing, laser processing, etc. Etc. can be used. The diameter d of the through hole 116 has a size of 30 μm or more and 200 μm or less, for example.

  Although not shown in FIG. 3A, an insulating film may be provided as a barrier layer on the surface of the support substrate 102. Note that the surface of the support substrate 102 includes the support substrate 102 and the through electrode 106 and between the support substrate 102 and the first wiring 118. The barrier layer is formed of a silicon oxide film, a silicon nitride film, or the like. For example, the barrier layer has a structure in which a silicon oxide film and a silicon nitride film are stacked from the support substrate 102 side. When the support substrate 102 is a glass substrate, this barrier layer is provided to prevent contamination by alkali metal contained in the glass. However, in the case of alkali-free glass, a barrier layer is unnecessary. Further, when the support substrate 102 is a semiconductor substrate, it is provided to insulate the through electrode 106.

  FIG. 3B is a diagram illustrating a method of forming the through electrode 106 in the through hole 116. For the through electrode 106, first, a seed layer is formed by a PVD method (vacuum deposition method or sputtering method) or an electroless plating method. In the case of the PVD method, the seed layer is formed along the inner surface of the through hole 116 from the respective surface sides of the first surface 102s1 and the second surface 102s2. In the case of the electroless plating method, the seed layer is, for example, a region where the plating solution is in contact by bringing a plating solution containing at least copper ions into contact with the side wall of the through-hole 116, the first surface 102s1, and the second surface 102s2. In this method, the plating layer is grown. The plating solution includes, for example, a copper compound such as copper sulfate to provide copper ions, and additives such as formaldehyde and sodium hydroxide. Next, the through electrode 106 is formed by growing the plating layer by an electrolytic plating method in which current is supplied through the seed layer. The thickness of the through electrode 106 is 2 μm or more and 20 μm or less, for example, 5 μm.

  At this time, a wiring layer may be formed on the first surface 102s1 in the same process as the formation of the through electrode 106. The wiring layer on the first surface 102s1 may be formed simultaneously with the through electrode by a semi-additive method, or wiring may be formed later by photolithography and etching processes.

  Note that the support substrate 102 may be provided with a plurality of through electrodes 106. In this case, the plurality of through electrodes 106 are preferably arranged at intervals of 10 μm or more, for example, may be arranged at intervals of 40 μm or more and 100 mm or less. The through electrode 106 provided on the support substrate 102 is electrically connected to the wiring of the multilayer wiring structure 104, and forms a conductive path between the first surface 102s1 side and the second surface 102s2 side of the support substrate 102. To do.

  FIG. 4A is a diagram illustrating a method of forming the through body 107 in the through hole 116. The inner hole of the through electrode 106 is filled with an insulating resin material having photocurability and thermosetting. Filling the holes protects the surface of the through electrode and facilitates the formation of an upper layer using a liquid material. In this embodiment, in order to fill the hole inside the through electrode 106, the photo-curing / thermosetting film is filled with a vacuum laminate. Furthermore, the insulating resin material is provided so as to cover the first surface 102s1 and the second surface 102s2 of the support substrate 102. On the first surface 102 s 1 side of the support substrate 102, the support substrate 102 is provided so as to cover the upper surface and side surfaces of the first wiring 118 a.

  As the photocuring / thermosetting film, a polyimide film, an epoxy film, or the like can be used. However, the present invention is not limited to this, and the penetrating body 107 may be formed by applying a photo-curing / thermosetting resin using a printing method. In this embodiment, a negative type photo-curing / thermosetting film is used. However, depending on the shape of the first protrusion 117, a positive-type photo-curing / thermosetting film or resin may be used. .

  FIG. 4B is a diagram illustrating a method for exposing an insulating resin material. Since the insulating resin material filled in the through hole 116 is a negative type, the insulating resin material is exposed to light and cured (primary curing). At this time, the insulating resin material is exposed using the photomask 200 that selectively transmits light in the transmissive region 202 that is slightly smaller than the hole inside the through electrode 106. Since the through-hole 116 is sufficiently deep, a part of the insulating resin material (region indicated by a dotted line) is cured by exposure on the surface of the support substrate 102 on the first surface 102s1 side in the stacking direction. Even in the insulating resin material under the transmissive region 202, the deeper in the stacking direction, the less the exposure and the incomplete curing. On the other hand, on the surface of the support substrate 102 on the second surface 102s2 side, the insulating resin material may be unexposed and uncured. That is, in the transmissive region 202 through which the photomask 200 transmits light, the degree of curing of the exposed insulating resin material gradually decreases from the first surface 102s1 side to the second surface 102s2 side in the stacking direction. Here, the state where the curing is incomplete indicates a state that is easily dissolved in a developer described later as compared with the cured state, and a state where it is difficult to be dissolved in the developer as compared with an uncured state. Such incomplete exposure conditions can be obtained by exposing the insulating resin material at an exposure wavelength having low transmittance, for example, i-line: 365 nm. On the other hand, the region where the photomask 200 does not transmit light is kept unexposed and uncured.

  FIG. 4C is a diagram illustrating a method for developing an insulating resin material. The unexposed or incompletely exposed insulating resin material is dissolved in a developer. The excess insulating resin material on the first surface 102s1 and the second surface 102s2 is dissolved so that at least the first surface 102s1 and the second surface 102s2 of the support substrate 102 are completely exposed. For this reason, the first exposed surface 107s1 on the first surface 102s1 side of the support substrate 102 of the insulating resin material filled in the hole inside the through electrode 106 is second in the stacking direction from the first surface 102s1. The surface 102s2 may be recessed. The second exposed surface 107s2 on the second surface 102s2 side of the support substrate 102 of the insulating resin material filled in the hole inside the through electrode 106 is also the first surface 102s1 in the stacking direction from the second surface 102s2. It may be indented to the side.

  On the other hand, a part of the insulating resin material photocured on the surface of the support substrate 102 on the first surface 102s1 side remains without being dissolved by the developer. For this reason, the 1st convex part 117 protrudes from the 1st exposed surface 107s1 of an insulating resin material to the 1st insulating layer 108a side. Since the transmittance of the exposure wavelength is low, even in the exposed region of the insulating resin material, the deeper the lamination direction, the more incompletely cured. The closer the first convex portion 117 is to the first exposed surface 107s1, the lower the degree of photocuring. The more incomplete the photocuring of the insulating resin material, the easier it is to dissolve in the developer. In other words, the deeper in the stacking direction, the easier it is to dissolve in the developer, and thus the first convex portion 117 is formed in an inversely tapered shape by development. In other words, the first convex portion 117 is formed in a cylindrical structure having a small diameter from the upper surface 117s1 side of the first convex portion to the first exposed surface 107s1 side.

  The development is stopped when the first surface 102s1 and the second surface 102s2 of the support substrate 102 are completely exposed. Since the thickness t of the support substrate 102 is sufficiently larger than the thickness t ′ on the first surface 102s1 and the second surface 102s2 of the support substrate 102 made of uncured insulating resin material, the through hole 116 is filled. Most of the insulating resin material remains undeveloped even in an uncured state. The insulating resin material remaining after development is thermally cured. The penetration body 107 can be formed by thermosetting at a temperature of 180 ° C. or higher and 400 ° C. or lower for 1 hour.

  FIG. 5A illustrates a method for forming the first insulating layer 108a. A first insulating layer 108 a is provided on the first surface 102 s 1 side of the support substrate 102. The first insulating layer 108 a is provided on the support substrate 102 so as to cover the upper surfaces and the side surfaces of the first wiring 118 a and the first protrusion 117. That is, the first wiring 118a and the first protrusion 117 are embedded in the first insulating layer 108a. When the penetrating body 107 includes the first protrusion 117, the adhesion between the penetrating body 107 and the first insulating layer 108a can be improved. By improving the adhesion between the penetrating body 107 and the first insulating layer 108a, the first wiring 118a interposed between the supporting substrate 102 having the penetrating body 107 and the penetrating electrode 106 and the first insulating layer 108a. Adhesion with can also be improved. That is, peeling of the support substrate 102 having the through body 107 and the through electrode 106, the first insulating layer 108a, and the first wiring 118a can be prevented, and the reliability of the through electrode substrate can be improved.

  The first insulating layer 108a is a resin such as a polyimide resin, an epoxy resin, an acrylic resin, a phenol resin, a silicone resin, a polycarbonate resin, a polyester resin, a polyurethane resin, a polysulfone resin, or a fluorine resin. Formed by the material. From the viewpoint of heat resistance and mechanical strength, it is preferable to use polyimide as the first insulating layer 108a. An organic resin material such as polyimide has a characteristic that the dielectric constant is smaller than that of an inorganic insulating material such as silicon nitride or silicon oxide. Accordingly, by using it as the interlayer insulating layer of the multilayer wiring structure 104, the capacitance between the wirings can be reduced, and the delay amount of the signal transmitted through the wiring layer can be reduced. The thickness of the first insulating layer 108a can be appropriately selected as long as desired insulating properties can be obtained. For example, the first insulating layer 108a is formed with a thickness of 3 μm to 30 μm, preferably 3 μm to 10 μm.

  FIG. 5B illustrates a method for forming the opening 128a in the first insulating layer 108a. The opening 128a exposes a part of the first wiring 118a. The opening 128a has a diameter of 5 μm to 500 μm, for example, 20 μm to 50 μm. The first wiring 118a may be electrically connected to an external wiring through the opening 128a. The first wiring 118a may be connected to an upper wiring by disposing an interlayer connection portion in the opening 128a.

[Reference Example of First Embodiment]
FIG. 14 shows the result of observing the cross-sectional shape of the support substrate 102 shown in FIG. 4C using an optical microscope. The support substrate 102 was formed with the through holes 116 by the above manufacturing method, and the through electrodes 106 and the through bodies 107 were formed in the through holes 116. As illustrated in FIG. 14, the first convex portion 117 having a reverse taper shape is formed on the first surface 102 s 1 of the penetrating body 107 by development by the method for manufacturing the through electrode substrate according to the embodiment of the present disclosure. It was.

Second Embodiment
[Structure of the through electrode substrate]
FIG. 6A shows the configuration of the through electrode substrate 100b according to the present disclosure. The through electrode substrate 100b includes a support substrate 102b and a multilayer wiring structure 104b. Since the through electrode substrate 100b according to the present embodiment is the same as the through electrode substrate 100a according to the first embodiment except that the first convex portion 117b has a columnar shape, here, according to the first embodiment. Parts different from the through electrode substrate 100a will be described.

  As shown to FIG. 6 (A), in this embodiment, the 1st convex part 117b is columnar shape. The side surface 117bs2 of the first convex portion 117b may be erected substantially perpendicular to the first exposed surface 107bs1. That is, the angle θ between the side surface 117bs2 of the first convex portion 117b and the first exposed surface 107bs1 may be about 90 °.

  The first protrusion 117b is embedded in the first insulating layer 108ba. When the penetrating body 107b includes the first protrusion 117b, the contact area between the penetrating body 107b and the first insulating layer 108ba can be increased, and adhesion can be improved. The first insulating layer 108ba is fitted to the first convex portion 117b. Since the first convex portion 117b has such a structure, the first convex portion 117b of the penetrating body 107b and the first insulating layer 108ba are fitted, and the penetrating body 107b and the first insulating layer 108ba are The adhesion can be further improved. By improving the adhesion between the penetrating body 107b and the first insulating layer 108ba, the first wiring 118ba interposed between the supporting substrate 102b including the penetrating body 107b and the penetrating electrode 106b and the first insulating layer 108ba. Adhesion with can also be improved. That is, peeling of the support substrate 102b having the through body 107b and the through electrode 106b, the first insulating layer 108ba, and the first wiring 118ba can be prevented, and the reliability of the through electrode substrate can be improved. .

[Method of manufacturing through electrode substrate]
Next, the through electrode substrate manufacturing method according to the present embodiment will be described in detail. Since the manufacturing method of the through electrode substrate according to the present embodiment is the same as the manufacturing method of the through electrode substrate 100a according to the first embodiment except for the steps of exposure and development, here, the through electrode according to the first embodiment is used. Differences from the manufacturing method of the substrate 100a will be described.

  Similarly to the first embodiment, when the insulating resin material filled in the through-hole 116b is a negative type, first, the resin is exposed and cured (primary curing). Since the through hole 116b is deep, the insulating resin material is sufficiently cured on the surface of the support substrate 102b on the first surface 102bs1 side. By exposing the insulating resin material at an exposure wavelength having a high transmittance, for example, h-line: 405 nm, the insulating resin material can be sufficiently cured on the surface on the first surface 102bs1 side.

  Next, the insulating resin material is developed. The unexposed or incompletely exposed insulating resin material is dissolved in a developer. Excess insulating resin material on the first surface 102bs1 and the second surface 102bs2 is dissolved so that at least the first surface 102bs1 and the second surface 102bs2 of the support substrate 102b are completely exposed. Therefore, the first exposed surface 107bs1 of the insulating resin material filled in the hole inside the through electrode 106b on the first surface 102bs1 side of the support substrate 102b is second in the stacking direction from the first surface 102bs1. The surface 102bs2 may be indented. The second exposed surface 107bs2 of the insulating resin material filled in the hole inside the through electrode 106b on the second surface 102bs2 side of the support substrate 102b is also the first surface 102bs1 in the stacking direction from the second surface 102bs2. It may be indented to the side.

  On the other hand, a part of the insulating resin material photocured on the surface of the support substrate 102b on the first surface 102bs1 side remains without being dissolved by the developer. For this reason, the 1st convex part 117b protrudes from the 1st exposed surface 107bs1 of an insulating resin material to the 1st insulating layer 108ba side. When the transmittance at the exposure wavelength is sufficiently high, the surface on the first surface 102bs1 side of the support substrate 102b is sufficiently photocured in the exposed region of the insulating resin material. For this reason, the 1st convex part 117b is formed in columnar shape by image development.

  The development is stopped when the first surface 102bs1 and the second surface 102bs2 of the support substrate 102b are completely exposed. Most of the insulating resin material filled in the through holes 116b remains undeveloped even in an uncured state. The insulating resin material remaining after development is thermally cured. The through-hole 107b can be formed by thermosetting at a temperature of 180 ° C. or higher and 400 ° C. or lower for 1 hour.

  In this embodiment, the negative type was used for the insulating resin material. However, the present invention is not limited to this, and the column-shaped first convex portion 117b is formed using a positive-type photocuring / thermosetting resin and a mask having an inverted pattern, as in the present embodiment. Can do.

<Third Embodiment>
[Structure of the through electrode substrate]
FIG. 6B shows a configuration of the through electrode substrate 100c according to the present disclosure. The through electrode substrate 100c includes a support substrate 102c and a multilayer wiring structure 104c. Since the through electrode substrate 100c according to the present embodiment is the same as the through electrode substrate 100a according to the first embodiment except for the shape of the first protrusion 117c, the through electrode substrate 100a according to the first embodiment is used here. Differences from the above will be described.

  As shown in FIG. 6B, in the present embodiment, the first protrusion 117c has a tapered shape. The side surface 117cs2 of the first convex portion 117c may be inclined at an obtuse angle with respect to the first exposed surface 107cs1. That is, the angle θ between the side surface 117cs2 of the first convex portion 117c and the first exposed surface 107cs1 may be in the range of 60 ° to 120 °.

  The first protrusion 117c is embedded in the first insulating layer 108ca. When the penetrating body 107c has the first convex portion 117c, the contact area between the penetrating body 107c and the first insulating layer 108ca can be increased, and the adhesion can be improved. The first insulating layer 108ca is fitted to the first convex portion 117c. Since the first convex portion 117c has such a structure, the first convex portion 117c of the penetrating body 107c and the first insulating layer 108ca are fitted, and the penetrating body 107c and the first insulating layer 108ca The adhesion can be further improved. By improving the adhesion between the penetrating body 107c and the first insulating layer 108ca, the first wiring 118ca interposed between the supporting substrate 102c including the penetrating body 107c and the penetrating electrode 106c and the first insulating layer 108ca. Adhesion with can also be improved. That is, the support substrate 102c having the through body 107c and the through electrode 106c, the first insulating layer 108ca, and the first wiring 118ca can be prevented from being peeled off, and the reliability of the through electrode substrate can be improved.

[Method of manufacturing through electrode substrate]
Next, the through electrode substrate manufacturing method according to the present embodiment will be described in detail. Since the manufacturing method of the through electrode substrate according to the present embodiment is the same as the manufacturing method of the through electrode substrate 100a according to the first embodiment except for the steps of exposure and development, here, the through electrode according to the first embodiment is used. Differences from the manufacturing method of the substrate 100a will be described.

  When the insulating resin material filled in the through-hole 116c is a positive type, the solubility of the resin is increased by performing exposure. Therefore, the insulating resin material is exposed using a photomask that shields a region that is slightly smaller than the hole inside the through electrode 106c. Since the through hole 116c is sufficiently deep, only a part of the insulating resin material is exposed in the stacking direction on the surface of the support substrate 102c on the first surface 102cs1 side. Even with an insulating resin material under the light transmission region of the mask, exposure becomes incomplete as the depth increases in the stacking direction. That is, in the region where the photomask transmits light, the exposed insulating resin material gradually decreases in solubility from the first surface 102cs1 side to the second surface 102cs2 side in the stacking direction. Such incomplete exposure conditions can be obtained by exposing the insulating resin material at an exposure wavelength having low transmittance, for example, i-line: 365 nm. On the other hand, on the surface of the support substrate 102c on the second surface 102cs2 side, the insulating resin material may be in a state where substantially the entire surface is exposed uniformly.

  Next, the insulating resin material is developed. The insulating resin material exposed or incompletely exposed is dissolved in a developer. Excess insulating resin material on the first surface 102cs1 and the second surface 102cs2 is dissolved so that at least the first surface 102cs1 and the second surface 102cs2 of the support substrate 102c are completely exposed. Therefore, the first exposed surface 107cs1 on the first surface 102cs1 side of the support substrate 102c of the insulating resin material filled in the hole inside the through electrode 106c is second in the stacking direction from the first surface 102cs1. The surface 102cs2 may be recessed. The second exposed surface 107cs2 on the second surface 102cs2 side of the support substrate 102c of the insulating resin material filled in the hole inside the through electrode 106c is also the first surface 102cs1 in the stacking direction from the second surface 102cs2. It may be indented to the side.

  On the other hand, a part of the insulating resin material that has not been exposed on the surface of the support substrate 102c on the first surface 102cs1 side remains without being dissolved by the developer. For this reason, the 1st convex part 117c protrudes from the 1st exposed surface 107cs1 of insulating resin material to the 1st insulating layer 108ca side. Since the transmittance of the exposure wavelength is low, even in the exposed region of the insulating resin material, the deeper in the lamination direction, the lower the solubility. The closer the first convex portion 117c is to the first exposed surface 107cs1, the more incompletely dissolved. That is, the deeper in the stacking direction, the harder it is to be dissolved by the developer, and therefore the first convex portion 117c is formed into a tapered shape by development. In other words, the first convex portion 117c is formed in a cylindrical structure having a large diameter from the upper surface 117cs1 side of the first convex portion to the first exposed surface 107cs1 side.

  The development is stopped when the first surface 102cs1 and the second surface 102cs2 of the support substrate 102c are completely exposed. Most of the insulating resin material filled in the through hole 116c remains undeveloped even in an uncured state. The insulating resin material remaining after development is thermally cured. The penetration body 107c can be formed by thermosetting at a temperature of 180 ° C. or higher and 400 ° C. or lower for 1 hour.

  In this embodiment, a positive type is used as the insulating resin material. However, the present invention is not limited to this, and even if a negative insulating resin material and the exposure method similar to the second embodiment are used, the tapered first convex portion 117c is formed by adjusting the development conditions. can do.

<Fourth embodiment>
[Structure of the through electrode substrate]
FIG. 7 shows a configuration of the through electrode substrate 100d according to the present disclosure. The through-electrode substrate 100 d includes a support substrate 102, a multilayer wiring structure 104, and an electrode (first electrode) 127. Since the through electrode substrate 100d according to the present embodiment is the same as the through electrode substrate 100a according to the first embodiment except that the electrode 127 is included, here, the through electrode substrate 100d is different from the through electrode substrate 100a according to the first embodiment. The part will be described.

  FIG. 7 shows a cross-sectional structure of the through electrode substrate 100d according to the present disclosure. FIG. 7A is a cross-sectional view in the stacking direction of the through electrode substrate 100d according to the present disclosure. FIG. 7B is an upper surface of the first surface 102s1 of the support substrate 102 obtained by removing the multilayer wiring structure 104 (the first wiring layer 118a and the first insulating layer 108a) from the through electrode substrate 100d according to the present disclosure. FIG. An electrode 127 is provided on the first surface 102 s 1 of the support substrate 102. The electrode 127 is interposed between the support substrate 102 and the first insulating layer 108 a of the multilayer wiring structure 104. The electrode 127 is disposed so as to cover the first exposed surface 107 s 1 of the penetrating body 107. The electrode 127 is electrically connected to the through electrode 106. The first insulating layer 108 a is disposed so as to cover the electrode 127. The first insulating layer 108 a may include an opening (first opening) 128 a that exposes a part of the electrode 127. Further, the electrode 127 may be electrically connected to, for example, a wiring arranged on the external substrate or the upper layer side through the opening 128a.

  Next, the configuration of the penetrating body 107 and the electrode 127 will be described in detail with reference to FIG. FIG. 8 is an enlarged cross-sectional view of region B in FIG. The penetrating body 107 includes a first convex portion 117 on the first exposed surface 107 s 1 on the first surface 102 s 1 side of the support substrate 102. The first protrusion 117 protrudes from the first exposed surface 107s1. The electrode 127 is disposed so as to cover the first exposed surface 107 s 1 including the first convex portion 117 of the penetrating body 107. The electrode 127 is embedded in the first insulating layer 108a.

  The upper surface 117s1 of the first protrusion protrudes toward the first insulating layer 108a in the stacking direction from the first exposed surface 107s1. The height t1 in the stacking direction from the first exposed surface 107s1 to the upper surface 117s1 of the first convex portion is preferably in the range of 10 μm to 25 μm. In the present embodiment, the upper surface 117s1 of the first protrusion protrudes toward the first insulating layer 108a in the stacking direction from the first surface 102s1. Furthermore, it is preferable that the upper surface 117 s 1 of the first protrusion protrudes toward the first insulating layer 108 a in the stacking direction from the upper end of the through electrode 106.

  On the other hand, the first exposed surface 107s1 is recessed from the upper end of the through electrode 106 toward the second surface 102s2 in the stacking direction. The height t2 in the stacking direction from the first exposed surface 107s1 to the upper end of the through electrode 106 is preferably in the range of 0 μm to 10 μm. Further, the first exposed surface 107s1 is preferably recessed from the first surface 102s1 toward the second surface 102s2 in the stacking direction.

  In this embodiment, the 1st convex part 117 is reverse taper shape. The side surface 117s2 of the first convex portion 117 is inclined at an acute angle with respect to the first exposed surface 107s1. The angle θ1 formed between the side surface 117s2 of the first convex portion 117 and the first exposed surface 107s1 is preferably in the range of 60 ° to 85 °. However, the present invention is not limited to this. For example, the first convex portion 117 may have a columnar shape or a tapered shape. That is, the angle θ1 formed by the side surface 117s2 of the first convex portion 117 and the first exposed surface 107s1 may be in the range of 60 ° to 120 °.

  The height of the electrode 127 in the stacking direction is higher than the height of the upper end of the through electrode 106 in the stacking direction. The height t3 in the stacking direction from the upper end of the through electrode 106 to the upper surface 127s1 of the electrode 127 is preferably in the range of 5 μm to 20 μm.

  In the present embodiment, the electrode 127 has a reverse tapered shape like the first convex portion 117. The side surface 127s2 of the electrode 127 is inclined at an acute angle with respect to the upper surface (or the first surface 102s1) of the first wiring 118a. The angle θ2 that the side surface 127s2 of the electrode 127 forms with the upper surface (or the first surface 102s1) of the first wiring 118a is substantially the same as the angle θ1 that the side surface 117s2 of the first convex portion 117 forms with the first exposed surface 107s1. It is. The angle θ2 formed by the side surface 127s2 of the electrode 127 and the upper surface (or the first surface 102s1) of the first wiring 118a is preferably in the range of 60 ° to 85 °. However, the present invention is not limited to this, and the shape of the electrode 127 reflects the shape of the first convex portion 117. The angle θ2 formed by the side surface 127s2 of the electrode 127 and the upper surface (or the first surface 102s1) of the first wiring 118a may be in the range of 60 ° to 120 °.

  The first convex portion 117 is embedded in the electrode 127. When the penetrating body 107 has the first convex portion 117, the contact area between the penetrating body 107 and the electrode 127 can be increased, and the adhesion can be improved. The electrode 127 is fitted to the first convex portion 117. Since the first protrusion 117 has such a structure (height, angle, etc.), the first protrusion 117 of the penetrating body 107 and the electrode 127 are fitted, and the penetrating body 107 and the electrode 127 Adhesion can be improved. Further, the electrode 127 is embedded in the first insulating layer 108a. When the electrode 127 reflects the structure (height, angle, etc.) of the first protrusion 117, the contact area between the electrode 127 and the first insulating layer 108a can be increased, and the adhesion is improved. Can do. The first insulating layer 108 a is fitted to the electrode 127. The electrode 127 reflects the structure (height, angle, etc.) of the first protrusion 117, so that the electrode 127 and the first insulating layer 108a are fitted, and the electrode 127 and the first insulating layer 108a Adhesion can be improved. By improving the adhesion between the penetrating body 107, the electrode 127, and the first insulating layer 108a, the first insulating layer 108a is interposed between the supporting substrate 102 having the penetrating body 107 and the penetrating electrode 106 and the first insulating layer 108a. Adhesion with the wiring 118a can also be improved. That is, peeling of the support substrate 102 having the through body 107 and the through electrode 106, the electrode 127, the first insulating layer 108a, and the first wiring 118a can be prevented, and the reliability of the through electrode substrate is improved. be able to.

[Method of manufacturing through electrode substrate]
Next, the manufacturing method of the through electrode substrate according to the present embodiment will be described in detail with reference to FIG. Since the through electrode substrate 100d according to the present embodiment is the same as the through electrode substrate 100a according to the first embodiment except that the electrode 127 is included, here, the through electrode substrate 100d is different from the through electrode substrate 100a according to the first embodiment. The part will be described. FIG. 9 is a cross-sectional view for explaining the method for manufacturing the through electrode substrate according to this embodiment.

  FIG. 9A is a diagram illustrating a method of forming the electrode 127 on the support substrate 102 (FIG. 4C) in which the through electrode 106 and the through body 107 are formed in the through hole 116 described in the first embodiment. . The electrode 127 may be formed by, for example, an electroless plating method. The electroless plating method is a method in which a plating solution is brought into contact with the first exposed surface 107 s 1 of the penetrating body 107 to grow a plating layer in a region where the plating solution is in contact. Thus, the electrode 127 is provided so as to cover the upper surface and the side surface of the first convex portion 117. At this time, a wiring layer may be formed on the first surface 102s1 and the second surface 102s2 in the same process as the formation of the electrode 127. The electrode 127 has a thickness of 5 μm to 20 μm, for example, 10 μm. Thereafter, the wiring layer of the first surface 102s1 may be formed by photolithography and etching processes.

  FIG. 9B illustrates a method for forming the first insulating layer 108a. A first insulating layer 108 a is provided on the first surface 102 s 1 side of the support substrate 102. The first insulating layer 108 a is provided on the support substrate 102 so as to cover the upper surfaces and side surfaces of the first wiring 118 a and the electrode 127. That is, the first wiring 118a and the electrode 127 are embedded in the first insulating layer 108a. By having the first protrusion 117 in the penetrating body 107, the adhesion between the penetrating body 107 and the electrode 127 can be improved. Further, the electrode 127 reflects the structure (height, angle, etc.) of the first protrusion 117, whereby the adhesion between the electrode 127 and the first insulating layer 108a can be improved. By improving the adhesion between the penetrating body 107, the electrode 127, and the first insulating layer 108a, the first insulating layer 108a is interposed between the supporting substrate 102 having the penetrating body 107 and the penetrating electrode 106 and the first insulating layer 108a. Adhesion with the wiring 118a can also be improved. That is, the support substrate 102 having the through body 107 and the through electrode 106, the electrode 127, the first insulating layer 108a, and the first wiring 118a can be prevented from being peeled off, and the reliability of the through electrode substrate can be improved. Can do.

  FIG. 9C illustrates a method for forming the opening 128a in the first insulating layer 108a. The opening 128a exposes a part of the electrode 127. The opening 128a has a diameter of 5 μm to 200 μm, for example, 20 μm to 100 μm. The electrode 127 may be electrically connected to an external wiring through the opening 128a. The electrode 127 may be connected to an upper layer wiring by disposing an interlayer connection portion in the opening 128a.

<Fifth Embodiment>
[Structure of the through electrode substrate]
FIG. 10 shows a configuration of the through electrode substrates 100e and 100f according to the present disclosure. The through electrode substrate 100e includes multilayer wiring structures 104 and 104 ′ on the first surface 102s1 and the second surface 102s2 of the support substrate 102, respectively. The through electrode substrate 100e according to the present embodiment is the same as the through electrode substrate 100a according to the first embodiment except that the through body 107e has a structure having a second convex portion 117 ′. A portion different from the through electrode substrate 100a according to the embodiment will be described.

  FIG. 10A shows a cross-sectional structure of the through electrode substrate 100e according to the present disclosure. The through-electrode substrate 100e includes a first substrate 102s1 and a support substrate (substrate) 102 including a second surface 102s2 opposite to the first surface, and a multilayer wiring structure disposed on the first surface 102s1 of the support substrate 102. A body 104 and a multilayer wiring structure 104 ′ disposed on the second surface 102 s 2 of the support substrate 102. FIG. 10A is a cross-sectional view in the stacking direction of the through electrode substrate 100e according to the present disclosure. In the present embodiment, the multilayer wiring structure 104 ′ includes a single wiring layer (second wiring layer 118′a) and a single insulating layer (second insulating layer) on the second surface 102s2 of the support substrate 102. However, the present invention is not limited to this structure. For example, a plurality of wiring layers and insulating layers may be repeatedly stacked, and an element such as a transistor may be disposed. It may be.

  The multilayer wiring structure 104 'includes a second insulating layer 108'a and a second wiring 118'a arranged on the lower layer side of the second insulating layer 108'a. The second wiring 118 ′ a is interposed between the second insulating layer 108 ′ a and the support substrate 102. The second wiring 118'a is electrically connected to the through electrode 106 at one end of the second wiring 118'a. Furthermore, the second wiring 118′a is connected to the external substrate or the upper layer side through the opening 128′a provided in the second insulating layer 108′a at the other end of the second wiring 118′a, for example. It may be electrically connected to the arranged wiring. In the present embodiment, one second wiring 118'a is arranged, but the present invention is not limited to this configuration, and a plurality of second wirings 118'a may be included.

  The penetrating body 107e includes a second convex portion 117 'on the second exposed surface 107s2 on the second surface 102s2 side of the support substrate 102. The second convex portion 117 ′ protrudes from the second exposed surface 107 s 2. The second convex portion 117 'is embedded in the second insulating layer 108'a.

  In the present embodiment, the second convex portion 117 ′ has the same structure (height, angle, etc.) as the first convex portion 117. However, the present invention is not limited to this, and the second protrusion 117 ′ may have a shape different from that of the first protrusion 117 as long as it is within the range of the condition of the first protrusion 117.

  The upper surface of the second protrusion protrudes toward the second insulating layer 108'a in the stacking direction from the second exposed surface 107s2. The height in the stacking direction from the second exposed surface 107s2 to the upper surface of the second convex portion is preferably in the range of 10 μm to 25 μm. In the present embodiment, the upper surface of the second convex portion protrudes from the second surface 102s2 toward the second insulating layer 108'a in the stacking direction. Furthermore, it is preferable that the upper surface of the second protrusion protrudes toward the second insulating layer 108 ′ a in the stacking direction from the upper surface of the second wiring 118 ′ a.

  On the other hand, the second exposed surface 107s2 is recessed toward the first surface 102s1 in the stacking direction from the upper surface of the second wiring 118'a. The height in the stacking direction from the second exposed surface 107s2 to the upper surface of the second wiring 118'a is preferably in the range of 0 μm to 10 μm. In addition, the second exposed surface 107s2 is preferably recessed from the second surface 102s2 toward the first surface 102s1 in the stacking direction.

  In the present embodiment, the second convex portion 117 ′ has a reverse taper shape. The side surface of the second convex portion 117 ′ is inclined at an acute angle with respect to the second exposed surface 107 s 2. The angle θ formed by the side surface of the second protrusion 117 ′ and the second exposed surface 107 s 2 is preferably in the range of 60 ° to 85 °. However, the present invention is not limited to this. For example, the second convex portion 117 ′ may have a columnar shape or a tapered shape. That is, the angle θ1 formed by the side surface of the second convex portion 117 ′ and the second exposed surface 107 s 2 may be in the range of 60 ° to 120 °.

  The second convex portion 117 'is embedded in the second insulating layer 108'a. When the penetrating body 107e has the second convex portion 117 ', the contact area between the penetrating body 107e and the second insulating layer 108'a can be increased, and the adhesion can be improved. The second insulating layer 108'a is fitted to the second convex portion 117 '. Since the second convex portion 117 ′ has such a structure (height, angle, etc.), the second convex portion 117 ′ of the penetrating body 107e and the second insulating layer 108′a are fitted, The adhesion between the penetrating body 107e and the second insulating layer 108'a can be further improved. By improving the adhesion between the penetrating body 107e and the second insulating layer 108′a, the first insulating layer 108′a interposed between the supporting substrate 102 having the penetrating body 107e and the penetrating electrode 106 and the second insulating layer 108′a. Adhesion with the second wiring 118′a can also be improved. That is, it is possible to prevent the support substrate 102 having the through body 107e and the through electrode 106, the second insulating layer 108′a, and the second wiring 118′a from being peeled off, thereby improving the reliability of the through electrode substrate. can do.

  By having the first protrusion 117 and the second protrusion 117 ′ in the through body 107e, the adhesion between the through body 107e, the first insulating layer 108a, and the second insulating layer 108′a is improved. be able to. By improving the adhesion between the through body 107e and each insulating layer, the adhesion between the support substrate 102 having the through body 107e and the through electrode 106 and the wiring interposed between the respective insulating layers is also improved. be able to. That is, the support substrate 102 having the through body 107e and the through electrode 106 and the multilayer wiring structures 104 and 104 'can be prevented from being peeled off, and the reliability of the through electrode substrate can be further improved.

  As shown in FIG. 10B, in the through electrode substrate 100f, electrodes 127 and 127 'can be further interposed between the support substrate 102 and the respective multilayer wiring structures 104 and 104'.

<Sixth Embodiment>
[Structure of semiconductor device]
In the sixth embodiment, a semiconductor device manufactured using the through electrode substrate shown in the first to fifth embodiments will be described. In the following description, a semiconductor device using the through electrode substrate shown in the first to fifth embodiments as an interposer will be described.

  FIG. 11 is a cross-sectional view illustrating a semiconductor device using a through electrode substrate according to an embodiment of the present disclosure. In the semiconductor device 1000, three through electrode substrates 1310, 1320, and 1330 are stacked and connected to an LSI substrate 1400 on which a semiconductor element such as a DRAM is formed, for example. The through electrode substrate 1310 has a connection terminal 1511 and a connection terminal 1512. The through electrode substrate 1320 includes a connection terminal 1521 and a connection terminal 1522. The through electrode substrate 1330 has a connection terminal 1532. The connection terminals 1511 and 1521 correspond to, for example, the first wiring 118a exposed in the opening 128a provided in the first insulating layer 108a illustrated in FIG. The connection terminals 1512, 1522, and 1532 correspond to, for example, the second wiring 118'a exposed in the opening 128'a provided in the second insulating layer 108'a illustrated in FIG.

  The material of each of the through electrode substrates 1310, 1320, and 1330 may be different. The connection terminal 1512 is connected to the connection terminal 1500 of the LSI substrate 1400 by the bump 1610. The connection terminal 1511 is connected to the connection terminal 1522 by the bump 1620. The connection terminal 1521 is connected to the connection terminal 1532 by the bump 1630. As the bumps 1610, 1620, and 1630, for example, a metal such as indium, copper, or gold is used.

  The number of stacked through electrode substrates is not limited to three, and may be two or four or more. Connection between opposing through-electrode substrates is not limited to connection via bumps, and other bonding techniques such as eutectic bonding may be used. As other connection methods, opposing through electrode substrates may be bonded to each other by applying and baking polyimide, epoxy resin, or the like.

  FIG. 12 is a cross-sectional view illustrating another example of a semiconductor device using a through electrode substrate according to an embodiment of the present disclosure. A semiconductor device 1000 illustrated in FIG. 12 includes semiconductor chips (LSI chips) 1410 and 1420 such as a MEMS device, a CPU, and a memory, and a through electrode substrate 1300 that are stacked and connected to the LSI substrate 1400.

  A through electrode substrate 1300 is disposed between the semiconductor chip 1410 and the semiconductor chip 1420. The semiconductor chip 1410 and the through electrode substrate 1300 are connected by bumps 1640. The semiconductor chip 1420 penetrating electrode substrate 1300 is connected by bumps 1650. A semiconductor chip 1410 is placed on the LSI substrate 1400, and the LSI substrate 1400 and the semiconductor chip 1420 are connected by a wire 1700. In this example, the through electrode substrate 1300 plays a role of connecting a plurality of semiconductor chips having different functions, thereby realizing a multifunctional semiconductor device. For example, when the semiconductor chip 1410 is a three-axis acceleration sensor and the semiconductor chip 1420 is a two-axis magnetic sensor, a five-axis motion sensor can be realized with one module.

  When the semiconductor chip is a sensor such as a MEMS device, the sensing result may be output as an analog signal. In this case, a low-pass filter, an amplifier, or the like may be formed on the semiconductor chip or the through electrode substrate 1300.

  FIG. 13 is a cross-sectional view illustrating still another example of the semiconductor device using the through electrode substrate according to the embodiment of the present disclosure. Although the above two examples (FIGS. 11 and 12) are three-dimensional implementations, the example shown in FIG. 13 is an example applied to the combined implementation of two dimensions and three dimensions (sometimes referred to as 2.5 dimensions). ). In the example shown in FIG. 13, six through electrode substrates 1310, 1320, 1330, 1340, 1350, and 1360 are stacked on the LSI substrate 1400. However, all the through electrode substrates are not only stacked, but are also arranged side by side in the in-plane direction of the substrate. The material of each of these through electrode substrates may be different.

  In FIG. 13, through electrode substrates 1310 and 1350 are connected to the LSI substrate 1400, through electrode substrates 1320 and 1340 are connected to the through electrode substrate 1310, and through electrode substrates 1330 are connected to the through electrode substrate 1320, A through electrode substrate 1360 is connected on the electrode substrate 1350. As shown in FIG. 13, these through electrode substrates can be used as an interposer for connecting a plurality of semiconductor chips, and two-dimensional and three-dimensional combined mounting is possible. The through electrode substrates 1330, 1340, 1360 and the like may be replaced with semiconductor chips.

  Note that the present disclosure is not limited to the above-described embodiment, and can be changed as appropriate without departing from the spirit of the present disclosure.

100a, 100d, 100e, 100f: through electrode substrate, 102: support substrate, 102s1: first surface, 102s2: second surface, 104, 104 ′: multilayer wiring structure, 106: through electrode, 107, 107e: Through body, 107s1, 107bs1, 107cs1: first exposed surface, 107s2: second exposed surface, 108a, 108′a: insulating layer, 116: through hole, 117, 117b, 117c, 117 ′: convex portion, 117s1 : Upper surface of convex portion, 117s2, 117bs2, 117cs2: side surface of convex portion, 118a, 118'a: wiring, 127, 127 ': electrode, 127s1: upper surface of electrode, 127s2: side surface of electrode, 128a, 128'a: Opening, 200: Photomask, 202: Transmission region, 1000: Semiconductor device, 1300, 1310, 1320, 13 0,1340,1350,1360: through electrode substrate, 1400: a substrate, 1410 and 1420: the semiconductor chip, 1500,1511,1512,1521,1522,1532: connection terminal, 1610,1620,1630: bump

Claims (24)

A substrate having a through-hole penetrating a first surface and a second surface facing the first surface;
A through electrode disposed on an inner surface of the through hole;
A penetrating body in contact with the through electrode, filling the through hole, and having a first convex portion on the first exposed surface on the first surface side;
A first insulating layer disposed on the first surface;
A through electrode substrate.   2. The through electrode substrate according to claim 1, wherein an upper surface of the first protrusion protrudes toward the first insulating layer in the stacking direction from the first surface.   3. The through electrode substrate according to claim 1, wherein the first exposed surface is recessed toward the second surface side in the stacking direction from the first surface.   4. The through electrode substrate according to claim 1, wherein the first protrusion has an inversely tapered shape. 5. A first electrode that covers the first exposed surface and is electrically connected to the through electrode;
The through electrode substrate according to claim 1, wherein the first insulating layer has a first opening that exposes the first electrode. The penetrating body further includes a second protrusion on the second exposed surface on the second surface side,
The through electrode substrate according to claim 1, further comprising a second insulating layer disposed on the second surface.   The through electrode substrate according to claim 6, wherein an upper surface of the second protrusion protrudes toward the second insulating layer in the stacking direction from the second surface.   The through electrode substrate according to claim 6 or 7, wherein the second exposed surface is recessed toward the first surface in the stacking direction from the second surface.   9. The through electrode substrate according to claim 6, wherein the second protrusion has an inversely tapered shape. A second electrode covering the second exposed surface and electrically connected to the through electrode;
10. The through electrode substrate according to claim 6, wherein the second insulating layer has a second opening that exposes the second electrode. 11.   The said penetration electrode electrically connects the 1st wiring arrange | positioned on the said 1st surface, and the 2nd wiring arrange | positioned on the said 2nd surface. The through electrode substrate according to Item.   The diameter of the first opening end of the through hole in the first surface is larger than the diameter of the second opening end of the through hole in the second surface. The through electrode substrate according to 1.   The penetration electrode substrate according to any one of claims 1 to 12, wherein the penetration body is an insulating resin material having photo-curing property and thermosetting property. The through electrode substrate according to any one of claims 1 to 13,
An LSI substrate connected to the through electrode of the substrate;
A semiconductor chip connected to the through electrode of the substrate;
A semiconductor device. Forming a through-hole penetrating the first surface and the second surface facing the first surface in the substrate;
A through electrode is formed on the inner surface of the through hole,
Forming a penetrating body in contact with the through electrode, filling the through hole, and having a first convex portion on the first exposed surface on the first surface side,
Forming a first insulating layer on the first surface;
The manufacturing method of the penetration electrode substrate containing this.   The method of manufacturing a through electrode substrate according to claim 15, wherein an upper surface of the first convex portion is protruded from the first surface to the first insulating layer side in the stacking direction.   17. The method for manufacturing a through electrode substrate according to claim 15, wherein the first exposed surface is recessed toward the second surface side in the stacking direction from the first surface.   The method for manufacturing a through electrode substrate according to any one of claims 15 to 17, wherein the first convex portion is formed in a reverse taper shape. Forming a first electrode that covers the first exposed surface and is electrically connected to the through electrode;
19. The method for manufacturing a through electrode substrate according to claim 15, wherein a first opening that exposes the first electrode is formed in the first insulating layer. 19. A second protrusion is further formed on the second exposed surface of the penetrating body on the second surface side;
The method for manufacturing a through electrode substrate according to claim 15, further comprising forming a second insulating layer on the second surface.   The manufacturing method of the penetration electrode substrate according to claim 20 which makes the upper surface of said 2nd convex part project to the 2nd insulating layer side in the lamination direction from said 2nd surface.   The method for manufacturing a through electrode substrate according to claim 20 or 21, wherein the second exposed surface is recessed toward the first surface side in the stacking direction from the second surface.   The method for manufacturing a through electrode substrate according to any one of claims 20 to 22, wherein the second convex portion is formed in a reverse tapered shape. Forming a second electrode that covers the second exposed surface and is electrically connected to the through electrode;
The method for manufacturing a through electrode substrate according to any one of claims 20 to 23, wherein the second insulating layer forms a second opening that exposes the second electrode.