JP2019004040A - 被加工物の切削方法 - Google Patents
被加工物の切削方法 Download PDFInfo
- Publication number
- JP2019004040A JP2019004040A JP2017117537A JP2017117537A JP2019004040A JP 2019004040 A JP2019004040 A JP 2019004040A JP 2017117537 A JP2017117537 A JP 2017117537A JP 2017117537 A JP2017117537 A JP 2017117537A JP 2019004040 A JP2019004040 A JP 2019004040A
- Authority
- JP
- Japan
- Prior art keywords
- workpiece
- device region
- cutting
- cutting blade
- guide groove
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 19
- 230000002093 peripheral effect Effects 0.000 claims description 19
- 238000003754 machining Methods 0.000 claims description 8
- 239000000463 material Substances 0.000 abstract description 7
- 230000015572 biosynthetic process Effects 0.000 abstract description 4
- 238000003672 processing method Methods 0.000 abstract description 4
- 230000000452 restraining effect Effects 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 42
- 230000007246 mechanism Effects 0.000 description 8
- 238000004140 cleaning Methods 0.000 description 7
- 239000012530 fluid Substances 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000007723 transport mechanism Effects 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3043—Making grooves, e.g. cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Dicing (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Engineering (AREA)
Abstract
【解決手段】複数の分割予定ラインによって区画された領域にデバイスが形成されたデバイス領域21と、デバイス領域を囲繞する外周余剰領域23とを表面に備えた板状の被加工物のデバイス領域に所望の深さの切削溝27を形成する被加工物の切削方法であって、チャックテーブルに保持された被加工物に、切削ブレード50を被加工物の外周から該分割予定ラインに沿って切り込ませ、外周からデバイス領域の一部にわたって所望の深さより浅いガイド溝25を形成するガイド溝形成ステップと、切削ブレードをガイド溝に向かって下降させて切り込み、所望の深さに切削ブレードの刃先を位置付けた後、分割予定ラインに沿ってデバイス領域の反対側の端部を超えて外周余剰領域の一部にわたって溝を形成するデバイス領域加工ステップと、を備える。
【選択図】図3
Description
11 貼り合わせウェーハ
14 切削ユニット
17 分割予定ライン
19 デバイス
21 デバイス領域
23 外周余剰領域
25 ガイド溝
27 切削溝
31 フレームユニット
50 切削ブレード
Claims (2)
- 交差する複数の分割予定ラインによって区画された複数の領域にそれぞれデバイスが形成されたデバイス領域と、該デバイス領域を囲繞する外周余剰領域とを表面に備えた板状の被加工物の該デバイス領域に所望の深さの切削溝を形成する被加工物の切削方法であって、
被加工物をチャックテーブルの保持面で保持する保持ステップと、
該チャックテーブルに保持された被加工物に、切削ブレードを被加工物の外周から該分割予定ラインに沿って切り込ませ、該外周から該デバイス領域の一部にわたって該所望の深さより浅いガイド溝を形成するガイド溝形成ステップと、
該ガイド溝を形成した後、該切削ブレードを上昇させて被加工物から該切削ブレードを退避させる第1退避ステップと、
該第1退避ステップを実施した後、該切削ブレードを該デバイス領域の該ガイド溝に向かって下降させて該ガイド溝に切り込み、該所望の深さに該切削ブレードの刃先を位置付けた後、該分割予定ラインに沿って該デバイス領域の反対側の端部を超えて該外周余剰領域の一部にわたり該所望の深さの溝を形成するデバイス領域加工ステップと、
該デバイス領域加工ステップを実施した後、該外周余剰領域の一部を切り残して該切削ブレードを上昇させ、被加工物から該切削ブレードを退避させる第2退避ステップと、を備え、
該デバイス領域加工ステップで被加工物に向かって該切削ブレードを下降させて切り込ませる際に、被加工物の表面に欠けが発生するのを該ガイド溝によって抑制することを特徴とする被加工物の切削方法。 - 該保持ステップを実施する前に、被加工物の裏面側にダイシングテープを貼着するテープ貼着ステップを更に備え、
該保持ステップでは、該ダイシングテープを介して被加工物を該チャックテーブルの保持面で保持し、
該デバイス領域加工ステップでは、該切削ブレードの刃先を該ダイシングテープに切り込ませて該所望の深さの溝を形成して被加工物を完全切断する請求項1記載の被加工物の切削方法。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017117537A JP6847529B2 (ja) | 2017-06-15 | 2017-06-15 | 被加工物の切削方法 |
TW107114824A TWI760488B (zh) | 2017-06-15 | 2018-05-02 | 被加工物的切削方法 |
MYPI2018701954A MY186298A (en) | 2017-06-15 | 2018-05-21 | Method of cutting workpiece |
SG10201804285WA SG10201804285WA (en) | 2017-06-15 | 2018-05-21 | Method of cutting workpiece |
KR1020180057751A KR102460049B1 (ko) | 2017-06-15 | 2018-05-21 | 피가공물의 절삭 방법 |
CN201810585752.7A CN109148367B (zh) | 2017-06-15 | 2018-06-06 | 被加工物的切削方法 |
US16/008,310 US10692766B2 (en) | 2017-06-15 | 2018-06-14 | Method of cutting workpiece |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017117537A JP6847529B2 (ja) | 2017-06-15 | 2017-06-15 | 被加工物の切削方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019004040A true JP2019004040A (ja) | 2019-01-10 |
JP6847529B2 JP6847529B2 (ja) | 2021-03-24 |
Family
ID=64658299
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017117537A Active JP6847529B2 (ja) | 2017-06-15 | 2017-06-15 | 被加工物の切削方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US10692766B2 (ja) |
JP (1) | JP6847529B2 (ja) |
KR (1) | KR102460049B1 (ja) |
CN (1) | CN109148367B (ja) |
MY (1) | MY186298A (ja) |
SG (1) | SG10201804285WA (ja) |
TW (1) | TWI760488B (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6812079B2 (ja) * | 2017-03-13 | 2021-01-13 | 株式会社ディスコ | 被加工物の加工方法 |
JP6847529B2 (ja) * | 2017-06-15 | 2021-03-24 | 株式会社ディスコ | 被加工物の切削方法 |
JP7080552B2 (ja) * | 2017-12-28 | 2022-06-06 | 株式会社ディスコ | 切削ブレードのドレッシング方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08213347A (ja) * | 1995-02-01 | 1996-08-20 | Hitachi Ltd | 半導体装置の製造方法 |
JP2006049419A (ja) * | 2004-08-02 | 2006-02-16 | Nec Tokin Corp | ダイシング方法 |
JP2006156638A (ja) * | 2004-11-29 | 2006-06-15 | Denso Corp | 半導体ウェハのダイシング方法 |
JP2007019478A (ja) * | 2005-06-07 | 2007-01-25 | Matsushita Electric Ind Co Ltd | ウエハのダイシング方法、ダイシング装置および半導体素子 |
US20150243560A1 (en) * | 2014-02-21 | 2015-08-27 | Disco Corporation | Wafer processing method |
JP2017050319A (ja) * | 2015-08-31 | 2017-03-09 | 株式会社東京精密 | ダイシング方法及びダイシング装置 |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0393251A (ja) * | 1989-09-06 | 1991-04-18 | Nippon Inter Electronics Corp | 半導体装置およびその製造方法 |
JPH11176772A (ja) * | 1997-12-05 | 1999-07-02 | Disco Abrasive Syst Ltd | プリカット方法 |
JP2002075919A (ja) * | 2000-08-30 | 2002-03-15 | Sharp Corp | 半導体ウエハのダイシング方法 |
DE10054038B4 (de) * | 2000-10-31 | 2006-11-30 | Infineon Technologies Ag | Verfahren zum Trennen eines plattenförmigen Körpers, insbesondere eines Halbleiterwafers, in Einzelstücke |
JP2003173986A (ja) | 2001-12-04 | 2003-06-20 | Disco Abrasive Syst Ltd | 2スピンドル切削装置における切削方法 |
JP4750519B2 (ja) | 2005-09-16 | 2011-08-17 | 株式会社ディスコ | 切削方法および切削装置 |
JP2009054904A (ja) * | 2007-08-29 | 2009-03-12 | Disco Abrasive Syst Ltd | 切削方法および切削装置 |
JP2009302228A (ja) | 2008-06-12 | 2009-12-24 | Canon Inc | ウエハのダイシング方法及び、該方法を用いて製造された液体吐出ヘッド |
JP2011228331A (ja) | 2010-04-15 | 2011-11-10 | Disco Abrasive Syst Ltd | 切削加工装置 |
JP2012043889A (ja) | 2010-08-17 | 2012-03-01 | Renesas Electronics Corp | 半導体ウェーハのダイシング方法 |
JP5886538B2 (ja) | 2011-04-18 | 2016-03-16 | 株式会社ディスコ | ウェーハの加工方法 |
JP5860272B2 (ja) * | 2011-11-24 | 2016-02-16 | 株式会社ディスコ | 光デバイスウエーハの加工方法 |
JP6084883B2 (ja) * | 2013-04-08 | 2017-02-22 | 株式会社ディスコ | 円形板状物の分割方法 |
JP6144107B2 (ja) * | 2013-05-09 | 2017-06-07 | 株式会社ディスコ | ウェーハの切削方法 |
JP6184162B2 (ja) | 2013-05-10 | 2017-08-23 | 株式会社ディスコ | 切削方法 |
JP6199659B2 (ja) * | 2013-08-15 | 2017-09-20 | 株式会社ディスコ | パッケージ基板の加工方法 |
JP6209047B2 (ja) | 2013-10-11 | 2017-10-04 | 株式会社ディスコ | 円形板状物の分割方法 |
JP6251574B2 (ja) * | 2014-01-14 | 2017-12-20 | 株式会社ディスコ | 切削方法 |
JP2015159136A (ja) * | 2014-02-21 | 2015-09-03 | 株式会社ディスコ | Cspウエーハの加工方法 |
JP6266429B2 (ja) * | 2014-05-08 | 2018-01-24 | 株式会社ディスコ | チップ間隔維持装置及びチップ間隔維持方法 |
JP2016219757A (ja) | 2015-05-26 | 2016-12-22 | 株式会社ディスコ | 被加工物の分割方法 |
JP6643663B2 (ja) * | 2016-03-18 | 2020-02-12 | 株式会社東京精密 | ダイシング装置及びダイシング方法 |
JP6847529B2 (ja) * | 2017-06-15 | 2021-03-24 | 株式会社ディスコ | 被加工物の切削方法 |
JP2020098827A (ja) * | 2018-12-17 | 2020-06-25 | 株式会社ディスコ | ウエーハの加工方法 |
JP7451039B2 (ja) * | 2020-04-10 | 2024-03-18 | 株式会社ディスコ | ブレード保持治具、切削装置、及び、切削ブレードの装着方法 |
-
2017
- 2017-06-15 JP JP2017117537A patent/JP6847529B2/ja active Active
-
2018
- 2018-05-02 TW TW107114824A patent/TWI760488B/zh active
- 2018-05-21 SG SG10201804285WA patent/SG10201804285WA/en unknown
- 2018-05-21 MY MYPI2018701954A patent/MY186298A/en unknown
- 2018-05-21 KR KR1020180057751A patent/KR102460049B1/ko active IP Right Grant
- 2018-06-06 CN CN201810585752.7A patent/CN109148367B/zh active Active
- 2018-06-14 US US16/008,310 patent/US10692766B2/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08213347A (ja) * | 1995-02-01 | 1996-08-20 | Hitachi Ltd | 半導体装置の製造方法 |
JP2006049419A (ja) * | 2004-08-02 | 2006-02-16 | Nec Tokin Corp | ダイシング方法 |
JP2006156638A (ja) * | 2004-11-29 | 2006-06-15 | Denso Corp | 半導体ウェハのダイシング方法 |
JP2007019478A (ja) * | 2005-06-07 | 2007-01-25 | Matsushita Electric Ind Co Ltd | ウエハのダイシング方法、ダイシング装置および半導体素子 |
US20150243560A1 (en) * | 2014-02-21 | 2015-08-27 | Disco Corporation | Wafer processing method |
JP2017050319A (ja) * | 2015-08-31 | 2017-03-09 | 株式会社東京精密 | ダイシング方法及びダイシング装置 |
Also Published As
Publication number | Publication date |
---|---|
US10692766B2 (en) | 2020-06-23 |
MY186298A (en) | 2021-07-07 |
CN109148367A (zh) | 2019-01-04 |
TWI760488B (zh) | 2022-04-11 |
KR102460049B1 (ko) | 2022-10-27 |
SG10201804285WA (en) | 2019-01-30 |
KR20180136880A (ko) | 2018-12-26 |
JP6847529B2 (ja) | 2021-03-24 |
US20180366371A1 (en) | 2018-12-20 |
TW201907455A (zh) | 2019-02-16 |
CN109148367B (zh) | 2023-12-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR102028765B1 (ko) | 원형 판형상물의 분할 방법 | |
KR101733290B1 (ko) | 절단 장치 및 절단 방법 | |
JP2008284635A (ja) | ウォータジェット加工方法 | |
KR102460049B1 (ko) | 피가공물의 절삭 방법 | |
JP6498020B2 (ja) | チャックテーブルの洗浄方法 | |
JP6209047B2 (ja) | 円形板状物の分割方法 | |
TW201641242A (zh) | 切削裝置 | |
JP7277026B2 (ja) | チップの製造方法 | |
JP5244548B2 (ja) | 保持テーブルおよび加工装置 | |
JP6893732B2 (ja) | 矩形基板支持トレーの製造方法 | |
JP5422176B2 (ja) | 保持テーブルおよび切削装置 | |
JP5839905B2 (ja) | 被加工物の切削方法 | |
US10535562B2 (en) | Processing method for workpiece | |
JP6821254B2 (ja) | 切削装置 | |
JP2008254111A (ja) | ウォータージェット加工装置 | |
KR102680920B1 (ko) | 피가공물의 절삭 방법 | |
JP2014220449A (ja) | 加工装置 | |
JP2005271120A (ja) | ウォータージェット加工方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170620 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20200406 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20210222 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20210302 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20210302 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6847529 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |