JP2019083231A5 - - Google Patents
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- JP2019083231A5 JP2019083231A5 JP2017208549A JP2017208549A JP2019083231A5 JP 2019083231 A5 JP2019083231 A5 JP 2019083231A5 JP 2017208549 A JP2017208549 A JP 2017208549A JP 2017208549 A JP2017208549 A JP 2017208549A JP 2019083231 A5 JP2019083231 A5 JP 2019083231A5
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- substrate
- reaction product
- time
- gas
- film
- Prior art date
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- 239000007789 gas Substances 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 9
- 239000007795 chemical reaction product Substances 0.000 claims description 5
- 239000010408 film Substances 0.000 claims description 4
- 239000002994 raw material Substances 0.000 claims description 4
- 238000010030 laminating Methods 0.000 claims description 2
- 239000012495 reaction gas Substances 0.000 claims description 2
- 239000010409 thin film Substances 0.000 claims description 2
- 210000002381 Plasma Anatomy 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
Description
さらにまた、本発明は、真空の処理雰囲気において、載置台に載置された基板に原料ガスを吸着させるステップと処理雰囲気を置換ガスにより置換するステップと基板に吸着した原料ガスと反応ガスとを反応させて反応生成物を生成するステップとを含む１サイクルを複数回繰り返して反応生成物を基板に積層する成膜工程と、
前記１サイクルにおいて、基板上の薄膜の膜厚における周方向の面内分布に影響のあるステップの中で、ステップに要するステップ時間が最も短いステップをＳｐ、当該ステップＳｐのステップ時間をｔｐとすると、前記ステップＳｐが行われている間の８０％以上の時間帯を含む時間ｔｐにおいて、載置台をＮ（１以上の整数）回転させる工程と、を含むことを特徴とする。
Furthermore, in the present invention, in a vacuum processing atmosphere, a step of adsorbing a raw material gas on a substrate placed on a mounting table, a step of replacing the processing atmosphere with a replacement gas, and a raw material gas and a reaction gas adsorbed on the substrate are separated. A film forming step of laminating the reaction product on the substrate by repeating one cycle a plurality of times including a step of reacting and producing a reaction product, and
In the above one cycle, among the steps that affect the in-plane distribution of the thin film on the substrate in the circumferential direction, the step with the shortest step time required for the step is Sp, and the step time of the step Sp is tp. It is characterized by including a step of rotating the mounting table by N (an integer of 1 or more) in a time tp including a time zone of 80% or more while the step Sp is being performed.
さらに、基板処理部１３及び１４の上部側には、絶縁部材３１を介して、上部電極をなす金属製のガスシャワーヘッド４が設けられている。このガスシャワーヘッド４には整合器３２を介して高周波電源３３が接続されている。こうして、成膜装置１は、ガスシャワーヘッド４と載置台２１との間に高周波電力を印加してプラズマを発生させる平行平板型プラズマ処理装置として構成されている。
Further, on the upper side of the substrate processing unit 13 and 14, via the insulating member 31, a metal gas shower head 4 constituting the upper electrode that provided. The gas shower head 4 of this high-frequency power source 33 is connected via a matching unit 32. In this way, the film forming apparatus 1 is configured as a parallel plate type plasma processing apparatus in which high frequency power is applied between the gas shower head 4 and the mounting table 21 to generate plasma.
Claims (1)
前記１サイクルにおいて、基板上の薄膜の膜厚における周方向の面内分布に影響のあるステップの中で、ステップに要するステップ時間が最も短いステップをＳｐ、当該ステップＳｐのステップ時間をｔｐとすると、前記ステップＳｐが行われている間の８０％以上の時間帯を含む時間ｔｐにおいて、載置台をＮ（１以上の整数）回転させる工程と、を含むことを特徴とする成膜方法。 In a vacuum processing atmosphere, a step of adsorbing a raw material gas on a substrate placed on a mounting table, a step of replacing the processing atmosphere with a replacement gas, and a reaction of the raw material gas adsorbed on the substrate with a reaction gas to produce a reaction product. A film forming step of laminating the reaction product on the substrate by repeating one cycle including the step of forming the reaction product a plurality of times.
In the one cycle, among the steps affecting the in-plane distribution of the film thickness of the thin film on the substrate in the circumferential direction, the step with the shortest step time required for the step is Sp, and the step time of the step Sp is tp. A film-forming method comprising a step of rotating a mounting table by N (an integer of 1 or more) at a time tp including a time zone of 80% or more while the step Sp is being performed.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017208549A JP6919498B2 (en) | 2017-10-27 | 2017-10-27 | Film formation equipment and film formation method |
| PCT/JP2018/039523 WO2019082937A1 (en) | 2017-10-27 | 2018-10-24 | Film formation device and film formation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017208549A JP6919498B2 (en) | 2017-10-27 | 2017-10-27 | Film formation equipment and film formation method |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2019083231A JP2019083231A (en) | 2019-05-30 |
| JP2019083231A5 true JP2019083231A5 (en) | 2020-10-01 |
| JP6919498B2 JP6919498B2 (en) | 2021-08-18 |
Family
ID=66247893
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017208549A Active JP6919498B2 (en) | 2017-10-27 | 2017-10-27 | Film formation equipment and film formation method |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP6919498B2 (en) |
| WO (1) | WO2019082937A1 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7472272B2 (en) * | 2019-09-10 | 2024-04-22 | アプライド マテリアルズ インコーポレイテッド | Steam supply method and device |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI334450B (en) * | 2004-03-12 | 2010-12-11 | Hitachi Int Electric Inc | Wafer treatment device and the manufacturing method of semiconductor device |
| KR101536257B1 (en) * | 2009-07-22 | 2015-07-13 | 한국에이에스엠지니텍 주식회사 | Lateral-flow deposition apparatus and method of depositing film by using the apparatus |
| JP5742185B2 (en) * | 2010-03-19 | 2015-07-01 | 東京エレクトロン株式会社 | Film forming apparatus, film forming method, rotation speed optimization method, and storage medium |
| WO2017056242A1 (en) * | 2015-09-30 | 2017-04-06 | 株式会社日立国際電気 | Semiconductor device manufacturing method, substrate processing device, and recording medium |
| JP6665726B2 (en) * | 2016-08-01 | 2020-03-13 | 東京エレクトロン株式会社 | Film forming equipment |
-
2017
- 2017-10-27 JP JP2017208549A patent/JP6919498B2/en active Active
-
2018
- 2018-10-24 WO PCT/JP2018/039523 patent/WO2019082937A1/en active Application Filing
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